EP2726646A1 - Réacteur à cartouche pour production de matériaux selon le processus de dépôt chimique en phase vapeur - Google Patents

Réacteur à cartouche pour production de matériaux selon le processus de dépôt chimique en phase vapeur

Info

Publication number
EP2726646A1
EP2726646A1 EP12808029.8A EP12808029A EP2726646A1 EP 2726646 A1 EP2726646 A1 EP 2726646A1 EP 12808029 A EP12808029 A EP 12808029A EP 2726646 A1 EP2726646 A1 EP 2726646A1
Authority
EP
European Patent Office
Prior art keywords
container
deposition
reactor
deposition surfaces
unsealing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12808029.8A
Other languages
German (de)
English (en)
Inventor
Kagan Ceran
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Greenly Group for Solar Technologies Ltd
Original Assignee
Greenly Group for Solar Technologies Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Greenly Group for Solar Technologies Ltd filed Critical Greenly Group for Solar Technologies Ltd
Publication of EP2726646A1 publication Critical patent/EP2726646A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

Definitions

  • a deposition plate is defined as the surfaces upon which the silicon is deposited, but for the purposes of enhanced clarity when describing actual physical components in this patent application, a “deposition surface” is defined as a surface upon which materials are deposited and a “deposition plate” is defined as an actual physical flat plate (an object with significantly larger surface areas on its sides relative to its edges) upon which materials are deposited, preferably on both sides as well as one or more edges.
  • a deposition plate is defined as an actual physical flat plate (an object with significantly larger surface areas on its sides relative to its edges) upon which materials are deposited, preferably on both sides as well as one or more edges.
  • the sides and edges of a deposition plate are deposition surfaces.
  • deposition cartridge is defined as the combination of distribution rods and a solid deposition plate or as simply a meander patterned deposition plate, either of which can incorporate an insulative layer or spacer.
  • solder reactor is defined as a deposition reactor that has originally been designed to utilize seed rods.
  • the '151 patent application describes the limitations of Siemens reactors as including:
  • the invention described in the '151 patent application overcomes these limitations by providing high- surface-area electrically heated deposition plates. Silicon is deposited at a high volumetric rate onto these plates through the CVD process and then recovered by additional heating of the plates. The additional heating causes a very thin layer of the deposited polysilicon at the plate interfaces to liquefy and the solid crust of deposited polysilicon can be pulled away from the plates either mechanically or by gravity.
  • Using large-sized plates in a Siemens reactor increases the productivity of the reactor relative to using conventional seed rods whereas using smaller-sized plates reduces the energy consumption of the reactor while maintaining the same productivity relative to using seed rods.
  • further limitations of Siemens reactors remain, including but not limited to:
  • the present invention overcomes the limitations of Siemens reactors described above by providing for the deposition reaction to occur inside of a sealed crucible rather than inside of the overall cavity of a water-cooled reactor.
  • Deposition onto the inner walls of the reactor is undesirable as it results in loss of the material to be produced, whereas deposition onto the inner walls of the crucible is actually desirable as it increases the volumetric deposition rate due to the addition of deposition surface area.
  • the crucible itself is positioned inside of a cartridge reactor, which can have heat shields between the crucible and the reactor walls to significantly reduce radiant energy losses. Typically up to 60 - 70% of the energy used by Siemens reactors is lost to their unshielded water-cooled walls.
  • the ratio of deposition surface area to cavity volume in the crucible is much higher than that in the ratio of rod deposition surface area to overall cavity volume in Siemens reactors, which results in a much higher contact percentage of gas molecules with the deposition surfaces. This in turn results in a much higher actual conversion ratio of material in the gas to material on the deposition surfaces.
  • Fig.l shows an elevation section of one preferred embodiment of the main components of the cartridge reactor
  • Fig. 2 shows plan sections of one preferred embodiment of the main components of the cartridge reactor
  • Fig. 3 shows a perspective of one preferred embodiment of deposition cartridges for the cartridge reactor
  • Fig. 4 shows an elevation section of one preferred embodiment of the cartridge reactor with the bottom assembly lowered and the crucible being loaded
  • Fig. 5 shows an elevation section of one preferred embodiment of the cartridge reactor with the bottom assembly raised and the reactor pressurized with inert gas
  • Fig. 6 shows an elevation section of one preferred embodiment of the cartridge reactor with the crucible raised and the deposition cartridges preheated
  • Fig. 7 shows an elevation section of one preferred embodiment of the cartridge reactor during the deposition sequence
  • Fig. 8 shows an elevation section of one preferred embodiment of the cartridge reactor during directional solidification with inert gas in the reactor
  • Fig. 9 shows an elevation section of one preferred embodiment of the cartridge reactor during cool down and air purge
  • Fig. 10 shows an elevation section of one preferred embodiment of the cartridge reactor with the bottom assembly lowered and the crucible being unloaded
  • Fig. 11 shows a side elevation section of one preferred embodiment of the reactor top assembly
  • Fig. 12 shows a front elevation section of one preferred embodiment of the reactor top assembly
  • Fig. 13 shows a plan section (looking up) of one preferred embodiment of the reactor top assembly
  • Fig. 14 shows a side elevation section of one preferred embodiment of the crucible during deposition showing gas flow patterns
  • Fig. 15 shows a plan section of one preferred embodiment of the crucible after deposition showing material crusts
  • the reactor top assembly 1 functions to support the deposition cartridges 2 (which are described in the '148 and '145 patent applications and in the DEPOSITION CARTRIDGE FOR PRODUCTION OF MATERIALS VIA THE CHEMCIAL VAPOR DEPOSITION PROCESS application filed concurrently herewith), distribute the deposition gas mix over the deposition surfaces of the deposition cartridges 2, remove the vent gas, and to affect heat exchange between the vent gas and the deposition gas mix.
  • the array of deposition cartridges 2 preferably has a square plan section if the desired final product is multicrystalline material or preferably a circular plan section if the desired final product is monocrystalline material.
  • the reactor top assembly 1 is attached to the reactor middle assembly 3 by the reactor flanges 9 which incorporate an airtight seal.
  • the reactor middle assembly 3 houses a crystallization heater 4.
  • the reactor bottom assembly 6, which can be raised to and lowered from the reactor middle assembly 3, houses a crucible pedestal 5 which is equipped with a bottom cooler 10 for cooling the crucible during directional solidification and which is capable of vertical travel. All assemblies of the reactor incorporate heat shields to minimize radiant energy losses.
  • the reactor walls 35 of the reactor top assembly 1, reactor middle assembly 3, and reactor bottom assembly 6 are preferably circular in plan section, and they are also preferably water cooled.
  • the plan sections of the heat shields 13, array of deposition cartridges 2, crystallization heater 4, and bottom cooler 10 are preferably square if multicrystalline material is desired and preferably circular if monocrystalline material is desired.
  • Fig. 3 shows a perspective of one preferred embodiment of the array of deposition cartridges 2 that are fitted to the reactor top assembly.
  • the deposition cartridges 2 are connected, by their electrode tabs 53, to the distribution bar 32 by electrode brackets 57.
  • There are 16 deposition cartridges 2 which are spaced approximately 5 cm apart and which have a height of approximately 42 cm and a length of approximately 75 cm.
  • the array of deposition cartridges 2 in this preferred embodiment is designed to fit inside of an 85 cm by 85 cm crucible typically used for the crystallization of deposition materials, including but not limited to polysilicon.
  • This preferred embodiment of the cartridge reactor 50 is operated in the following preferred seven steps:
  • a crucible-loading step is shown in Fig.4.
  • the reactor bottom assembly 6 is lowered and the crucible 11, which is preferably quartz, is precisely positioned onto the crucible pedestal 5.
  • An inert gas purge step is shown in Fig. 5.
  • the reactor bottom assembly 6 is raised and the airtight reactor flanges 6 of the reactor bottom assembly and of the reactor middle assembly 3 are sealed.
  • the reactor cavity is purged with an inert gas, preferably nitrogen, using the reactor gas inlets 18 and the reactor top assembly 1 gas inlets and outlets.
  • the cartridge reactor 50 is also brought up to operating pressure, (preferably in the range of 6 bar).
  • a preheating step is shown in Fig 6.
  • the crucible pedestal 5 is raised so that the top edges of the crucible 11 press against the gas seal 19 and form an airtight seal.
  • the deposition cartridges 2 are then electrically preheated to the optimal deposition temperature, which is preferably in the range of 850 °C to 1,150 °C when the deposition material is polysilicon.
  • Heat shields 13 in the cartridge reactor 50 minimize radiant energy losses and minimize the cooling duty of the water-cooled reactor walls 35.
  • a deposition sequence step is shown in Fig 7.
  • the deposition gas mix which is preferably trichlorosilane and hydrogen or monosilane when the deposition material is polysilicon, is pumped into the crucible 11 from gas inlets in the reactor top assembly 1 while inert gas, which is preferably nitrogen, is maintained in the rest of the reactor cavity outside of the crucible.
  • the inert gas is at a slightly higher pressure than the deposition gas so that in the unlikely event of a leak in the gas seal 19, inert gas will leak into the crucible 11 rather than flammable deposition gas mix leaking outside of the crucible 11.
  • inert gas will leak outside of the cartridge reactor 50 rather than flammable deposition gas mix leaking outside of the cartridge reactor 50, which is an additional safety improvement over Siemens reactors.
  • the gas seal 19 is preferably chosen to withstand relatively high temperatures, for which there are preferred seal materials, such as carbon-based materials, but the gas seal preferably experiences a relatively small pressure differential.
  • the deposition gas mix that is pumped into the crucible 11 comes into contact with the heated deposition surfaces of the deposition cartridges 2, undergoes the deposition reaction, converts into the vent gas and is removed through gas outlets in the reactor top assembly 1.
  • this process continues until a material crust 14 has accumulated on the deposition surfaces such that most of the void volume inside the crucible 11 is filled.
  • a suitable inert gas preferably argon, and preferably a vacuum is drawn both inside and outside of the crucible 11.
  • the deposition surfaces are further heated to or above the melting point of the material, causing a thin layer of the material at the deposition surfaces of the deposition cartridges 2 to liquefy and the material crust to detach from the deposition cartridges 2.
  • a crystallization step is shown in Fig. 8.
  • the crucible pedestal 5 carrying the crucible 11 and the material crust 14 is lowered into the reactor middle assembly 3, and the material crust 14 is further heated by the crystallization heater 4 until it becomes liquid material 15.
  • the heat shields 13 can incorporate a reflective layer to minimize radiant energy losses and an insulating layer outside of the reflective layer to minimize convective and conductive energy losses.
  • directional solidification is achieved through one or more means including activation of the bottom cooler 10, control of the crystallization heater 4, and/or movement of the crucible pedestal 5 away from the
  • the rotating heat shield 12 is closed to provide insulation over the top of the crucible 11 in order to minimize energy losses.
  • the solidification front 16 moves upward through the liquid material 15, forming a crystalline material ingot 17 behind it.
  • the material crust 14 can be fully melted by the deposition cartridges 2 while the crucible 11 is still in the fully raised position.
  • the crucible 11 can then be lowered in a controlled manner while the deposition cartridges 2 continue to heat the liquid silicon and the bottom cooler 10 is activated to initiate directional solidification.
  • This preferred embodiment has the potential to accelerate the crystallization process as well as produce higher quality crystalline silicon by keeping the solidification front 16 more planar. Both preferred embodiments described above result in the production of multicrystalline material and a square plan section geometry for the array of deposition cartridges 2, the crucible 11, and the bottom cooler 10 is preferred.
  • this plan section geometry is circular and a rotating puller rod is introduced from the reactor top assembly 1 into the liquid material 15, a monocrystalline ingot can also be produced, by the Czochralski crystallization process.
  • this entire crystallization step can be omitted and the cartridge reactor 50 can be used to produce just amorphous material in crucibles for further processing elsewhere.
  • a cool down and air purge step is shown in Fig. 9, where the vacuum is replaced with circulating inert gas, preferably argon, for convective cooling. After sufficient cooling of the crucible to facilitate subsequent handling, the inert gas is purged with air in preparation for unsealing and lowering the reactor bottom assembly 6.
  • inert gas preferably argon
  • cooling of the crucible 11 and material crust 14 can also be omitted so that energy consumption in subsequent processing steps can be minimized as applicable.
  • crucible-unloading step is shown in Fig. 10.
  • the reactor bottom assembly is
  • a feature of the preferred embodiment of the cartridge reactor 50 is the effective distribution and preheating of the deposition gas mix that is achieved in the reactor top assembly 1.
  • Fig. 11 which is a side elevation section of the reactor top assembly 1
  • the deposition gas mix enters into the deposition gas mix inlet manifold 29 through the deposition gas mix inlet 20.
  • the deposition gas mix is routed into a multiplicity of deposition gas mix inlet nozzles 24 which extend downward and open at the bottom surface of the reactor top assembly 1 directly above the deposition cartridges 2.
  • the deposition gas mix shoots out through each deposition gas mix nozzle 24, travels downward between the deposition cartridges 2, and strikes the bottom of the crucible 11.
  • the blocking effect of adjacent streams of deposition gas mix striking the bottom of the crucible 11 minimizes the lateral spread of the deposition gas mix and forces it to flow predominantly back up, preferably in a swirling or turbulent motion, between the deposition gas mix exiting the deposition gas mix nozzle 24, preferably in a downward stream, and the deposition cartridges 2 (see also Figs. 12, 13, and particularly 14).
  • This turbulent flow preferably results in more complete contacting of the deposition gas mix with the deposition cartridges 2 and hence more complete conversion of the material in the deposition gas mix to material on the deposition surfaces.
  • vent gas continues to travel upward where it is removed through a vent gas outlet annulus 25 which surrounds the deposition gas mix inlet nozzle 24 and which is the only escape route.
  • This heated vent gas traveling upward through the vent gas outlet annulus 25 heats the deposition gas mix traveling downward through the deposition gas mix nozzle 24 within. It also heats the cooling water traveling outside of the vent gas outlet annulus in the vent gas aftercooler 26.
  • Other preferred embodiments of the deposition gas mix distribution pattern include individual alternating inlet and outlet nozzles or rows of alternating inlet and outlet nozzles.
  • vent gas is collected into a single stream from the multiplicity of vent gas outlet annuli 25 in the vent gas outlet manifold 27 and exits the reactor top assembly through the vent gas outlet 22.
  • cooling water that has been heated in the vent gas aftercooler 26 flows on to the deposition gas mix preheater 28 where it provides initial heating to the deposition gas mix that has just entered the deposition gas mix inlet nozzles 24.
  • This cooling water then exits the reactor top assembly 1 through the cooling water outlet 21.
  • Figs 11 and 13 show one preferred embodiment of the reactor top assembly 1 with the positioning of the deposition gas mix inlet nozzles 24 directly above the gap between the deposition cartridges 2 which are attached to the distribution bars 32.
  • Figures 11 and 13 also show the deposition cartridges 2 electrically connected in parallel via the distribution bars 32, which themselves are is connected to an electrical power supply via the distribution bar electrode 31 which forms an electrically insulated airtight seal against the side wall of the vent gas aftercooler 26.
  • the electrode tabs 53 or electrode brackets 57 can be extended up and out through the top of the reactor top assembly 1 through insulated steel tubes and can be connected to the power supply at a point on top of the reactor top assembly 1.
  • FIG. 15 A preferred embodiment of the crucible 11 after deposition and separation from the deposition cartridges 2 is shown in Fig. 15. Material which has deposited onto the inside walls of the crucible 11 and the deposition surfaces of the deposition cartridges 2 fills most of the volume of the crucible and narrow deposition cartridge voids 36 remain in place of the deposition cartridges 2.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

La présente invention a pour but de surmonter les contraintes liées aux réacteurs Siemens en faisant intervenir une réaction de dépôt à l'intérieur d'un creuset hermétique plutôt qu'à l'intérieur de toute la cavité d'un réacteur refroidi par eau. Le creuset lui-même est positionné à l'intérieur d'un réacteur à cartouche qui peut comporter des écrans thermiques entre les parois du creuset et du réacteur de manière à réduire considérablement les pertes d'énergie radiante. De plus, le rapport surface de dépôt/volume de la cavité du creuset est bien supérieur au rapport surface de dépôt des tiges/volume global de la cavité dans les réacteurs Siemens, ce qui donne lieu à un pourcentage de contact bien plus élevé des molécules gazeuses avec les surfaces de dépôt. Ceci se traduit également par un rapport de conversion réel matière dans le gaz/matière sur les surfaces de dépôt bien plus élevé.
EP12808029.8A 2011-07-01 2012-07-01 Réacteur à cartouche pour production de matériaux selon le processus de dépôt chimique en phase vapeur Withdrawn EP2726646A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161504145P 2011-07-01 2011-07-01
US201161504148P 2011-07-01 2011-07-01
PCT/US2012/045177 WO2013006523A1 (fr) 2011-07-01 2012-07-01 Réacteur à cartouche pour production de matériaux selon le processus de dépôt chimique en phase vapeur

Publications (1)

Publication Number Publication Date
EP2726646A1 true EP2726646A1 (fr) 2014-05-07

Family

ID=47437386

Family Applications (2)

Application Number Title Priority Date Filing Date
EP12808029.8A Withdrawn EP2726646A1 (fr) 2011-07-01 2012-07-01 Réacteur à cartouche pour production de matériaux selon le processus de dépôt chimique en phase vapeur
EP12807788.0A Withdrawn EP2726645A1 (fr) 2011-07-01 2012-07-01 Cartouche de dépôt pour production de matériaux selon le processus de dépôt chimique en phase vapeur

Family Applications After (1)

Application Number Title Priority Date Filing Date
EP12807788.0A Withdrawn EP2726645A1 (fr) 2011-07-01 2012-07-01 Cartouche de dépôt pour production de matériaux selon le processus de dépôt chimique en phase vapeur

Country Status (8)

Country Link
EP (2) EP2726646A1 (fr)
JP (2) JP2014523488A (fr)
KR (2) KR20140082638A (fr)
CN (2) CN103998648A (fr)
IN (1) IN2014MN00197A (fr)
RU (2) RU2014103707A (fr)
TW (2) TWI472654B (fr)
WO (2) WO2013006522A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2534192B (en) * 2015-01-16 2019-10-23 Oxford Instruments Nanotechnology Tools Ltd Surface Processing Apparatus and Method
JP2018123033A (ja) * 2017-02-02 2018-08-09 信越化学工業株式会社 多結晶シリコン棒の製造方法および多結晶シリコン棒
JP6969917B2 (ja) 2017-07-12 2021-11-24 信越化学工業株式会社 多結晶シリコン棒および多結晶シリコン棒の製造方法

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Publication number Priority date Publication date Assignee Title
US4710260A (en) * 1982-12-22 1987-12-01 Texas Instruments Incorporated Deposition of silicon at temperatures above its melting point
US5320680A (en) * 1991-04-25 1994-06-14 Silicon Valley Group, Inc. Primary flow CVD apparatus comprising gas preheater and means for substantially eddy-free gas flow
US20080206970A1 (en) * 2005-04-10 2008-08-28 Franz Hugo Production Of Polycrystalline Silicon
EP2150491A4 (fr) * 2007-04-25 2011-11-30 Kagan Ceran Déposition d'un silicium de pureté élevée par interfaces gaz-solide ou gaz-liquide à aire spécifique élevée et récupération en phase liquide
JP5428303B2 (ja) * 2007-11-28 2014-02-26 三菱マテリアル株式会社 多結晶シリコン製造方法
US8399072B2 (en) * 2009-04-24 2013-03-19 Savi Research, Inc. Process for improved chemcial vapor deposition of polysilicon
KR101115697B1 (ko) * 2009-12-02 2012-03-06 웅진폴리실리콘주식회사 에너지 효율을 높여주는 복사열 차단막을 갖는 화학기상증착 반응기

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Also Published As

Publication number Publication date
IN2014MN00197A (fr) 2015-08-21
TWI472654B (zh) 2015-02-11
KR20140082638A (ko) 2014-07-02
KR20140082637A (ko) 2014-07-02
WO2013006522A1 (fr) 2013-01-10
RU2014103710A (ru) 2015-08-10
JP2014523488A (ja) 2014-09-11
JP2014522799A (ja) 2014-09-08
TW201305400A (zh) 2013-02-01
CN103958732A (zh) 2014-07-30
RU2014103707A (ru) 2015-08-10
WO2013006522A9 (fr) 2013-02-14
CN103998648A (zh) 2014-08-20
WO2013006523A1 (fr) 2013-01-10
EP2726645A1 (fr) 2014-05-07
TW201305376A (zh) 2013-02-01

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