EP2659517A4 - Verfahren zur formung einer vorrichtung durch herstellung eines trägerelements auf einem dünnen halbleiterplättchen - Google Patents

Verfahren zur formung einer vorrichtung durch herstellung eines trägerelements auf einem dünnen halbleiterplättchen Download PDF

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Publication number
EP2659517A4
EP2659517A4 EP11852246.5A EP11852246A EP2659517A4 EP 2659517 A4 EP2659517 A4 EP 2659517A4 EP 11852246 A EP11852246 A EP 11852246A EP 2659517 A4 EP2659517 A4 EP 2659517A4
Authority
EP
European Patent Office
Prior art keywords
constructing
support element
thin semiconductor
semiconductor lamina
lamina
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP11852246.5A
Other languages
English (en)
French (fr)
Other versions
EP2659517A2 (de
Inventor
Christopher J. Petti
Mohamed M. Hilali
Theodore Smick
Venkatesan Murali
Kathy J. Jackson
Zhiyong Li
Gopalakrishna Prabhu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GTAT Corp
Original Assignee
GTAT Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/980,424 external-priority patent/US8173452B1/en
Priority claimed from US12/980,427 external-priority patent/US8101451B1/en
Application filed by GTAT Corp filed Critical GTAT Corp
Publication of EP2659517A2 publication Critical patent/EP2659517A2/de
Publication of EP2659517A4 publication Critical patent/EP2659517A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
    • H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
EP11852246.5A 2010-12-29 2011-12-22 Verfahren zur formung einer vorrichtung durch herstellung eines trägerelements auf einem dünnen halbleiterplättchen Withdrawn EP2659517A4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/980,424 US8173452B1 (en) 2010-12-29 2010-12-29 Method to form a device by constructing a support element on a thin semiconductor lamina
US12/980,427 US8101451B1 (en) 2010-12-29 2010-12-29 Method to form a device including an annealed lamina and having amorphous silicon on opposing faces
PCT/US2011/066957 WO2012092145A2 (en) 2010-12-29 2011-12-22 A method to form a device by constructing a support element on a thin semiconductor lamina

Publications (2)

Publication Number Publication Date
EP2659517A2 EP2659517A2 (de) 2013-11-06
EP2659517A4 true EP2659517A4 (de) 2017-10-25

Family

ID=46383821

Family Applications (1)

Application Number Title Priority Date Filing Date
EP11852246.5A Withdrawn EP2659517A4 (de) 2010-12-29 2011-12-22 Verfahren zur formung einer vorrichtung durch herstellung eines trägerelements auf einem dünnen halbleiterplättchen

Country Status (5)

Country Link
EP (1) EP2659517A4 (de)
JP (1) JP2014501456A (de)
KR (1) KR20130143100A (de)
CN (1) CN103348491A (de)
WO (1) WO2012092145A2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8901010B2 (en) * 2013-03-15 2014-12-02 Sunpower Corporation Methods for improving solar cell lifetime and efficiency

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090242010A1 (en) * 2008-03-27 2009-10-01 Twin Creeks Technologies, Inc. Method to Form a Photovoltaic Cell Comprising a Thin Lamina Bonded to a Discrete Receiver Element
US20100224238A1 (en) * 2009-03-06 2010-09-09 Twin Creeks Technologies, Inc. Photovoltaic cell comprising an mis-type tunnel diode

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11214723A (ja) * 1998-01-29 1999-08-06 Kyocera Corp 太陽電池素子の製造方法
JP2000252492A (ja) * 1999-02-25 2000-09-14 Sumitomo Electric Ind Ltd 太陽電池、この製造方法、および積層型太陽電池
JP2002100791A (ja) * 2000-09-21 2002-04-05 Canon Inc 太陽電池の製造方法
JP2003017723A (ja) * 2001-06-29 2003-01-17 Shin Etsu Handotai Co Ltd 半導体薄膜の製造方法及び太陽電池の製造方法
JP5084146B2 (ja) * 2006-01-30 2012-11-28 三洋電機株式会社 光起電力モジュール
US20080092949A1 (en) * 2006-09-11 2008-04-24 Silicon China Limited Method and structure for textured thermal cut for photovoltaic applications for thin films
JP5090716B2 (ja) * 2006-11-24 2012-12-05 信越化学工業株式会社 単結晶シリコン太陽電池の製造方法
JP5248994B2 (ja) * 2007-11-30 2013-07-31 株式会社半導体エネルギー研究所 光電変換装置の製造方法
US8481845B2 (en) * 2008-02-05 2013-07-09 Gtat Corporation Method to form a photovoltaic cell comprising a thin lamina
US8129613B2 (en) * 2008-02-05 2012-03-06 Twin Creeks Technologies, Inc. Photovoltaic cell comprising a thin lamina having low base resistivity and method of making
JP5297219B2 (ja) * 2008-02-29 2013-09-25 信越化学工業株式会社 単結晶薄膜を有する基板の製造方法
EP2105972A3 (de) * 2008-03-28 2015-06-10 Semiconductor Energy Laboratory Co, Ltd. Photoelektrische Umwandlungsvorrichtung und Verfahren zu deren Herstellung
US7897945B2 (en) * 2008-09-25 2011-03-01 Twin Creeks Technologies, Inc. Hydrogen ion implanter using a broad beam source
JP2010093186A (ja) * 2008-10-10 2010-04-22 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子の製造方法、窒化ガリウム系化合物半導体素子の積層構造及び窒化ガリウム系化合物半導体発光素子、並びにランプ
US20100139755A1 (en) * 2008-12-09 2010-06-10 Twin Creeks Technologies, Inc. Front connected photovoltaic assembly and associated methods
EP2421026A4 (de) * 2009-04-15 2017-11-29 Huilong Zhu Substratstruktur zur herstellung einer halbleitervorrichtung und herstellungsverfahren dafür

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090242010A1 (en) * 2008-03-27 2009-10-01 Twin Creeks Technologies, Inc. Method to Form a Photovoltaic Cell Comprising a Thin Lamina Bonded to a Discrete Receiver Element
US20100224238A1 (en) * 2009-03-06 2010-09-09 Twin Creeks Technologies, Inc. Photovoltaic cell comprising an mis-type tunnel diode

Also Published As

Publication number Publication date
JP2014501456A (ja) 2014-01-20
EP2659517A2 (de) 2013-11-06
CN103348491A (zh) 2013-10-09
KR20130143100A (ko) 2013-12-30
WO2012092145A3 (en) 2012-11-08
WO2012092145A2 (en) 2012-07-05

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