WO2012092145A3 - A method to form a device by constructing a support element on a thin semiconductor lamina - Google Patents

A method to form a device by constructing a support element on a thin semiconductor lamina Download PDF

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Publication number
WO2012092145A3
WO2012092145A3 PCT/US2011/066957 US2011066957W WO2012092145A3 WO 2012092145 A3 WO2012092145 A3 WO 2012092145A3 US 2011066957 W US2011066957 W US 2011066957W WO 2012092145 A3 WO2012092145 A3 WO 2012092145A3
Authority
WO
WIPO (PCT)
Prior art keywords
lamina
support element
following
adhesives
situ
Prior art date
Application number
PCT/US2011/066957
Other languages
French (fr)
Other versions
WO2012092145A2 (en
Inventor
Christopher J. Petti
Mohamed M. Hilali
Theodore Smick
Venkatesan Murali
Kathy J. Jackson
Zhiyong Li
Gopalakrishna Prabhu
Original Assignee
Twin Creeks Technologies, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/980,427 external-priority patent/US8101451B1/en
Priority claimed from US12/980,424 external-priority patent/US8173452B1/en
Application filed by Twin Creeks Technologies, Inc. filed Critical Twin Creeks Technologies, Inc.
Priority to CN2011800629889A priority Critical patent/CN103348491A/en
Priority to EP11852246.5A priority patent/EP2659517A4/en
Priority to JP2013547580A priority patent/JP2014501456A/en
Priority to KR1020137017702A priority patent/KR20130143100A/en
Publication of WO2012092145A2 publication Critical patent/WO2012092145A2/en
Publication of WO2012092145A3 publication Critical patent/WO2012092145A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
    • H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

A semiconductor assembly is described in which a support element is constructed on a surface of a semiconductor lamina. Following formation of the thin lamina, which may have a thickness about 50 microns or less, the support element is formed, for example by plating, or by application of a precursor and curing in situ, resulting in a support element which may be, for example, metal, ceramic, polymer, etc. This is in contrast to a rigid or semi-rigid pre-formed support element which is affixed to the lamina following its formation, or to a donor wafer from which the lamina is subsequently cleaved. Fabricating the support element in situ may avoid the use of adhesives to attach the lamina to a permanent support element; such adhesives may be unable to tolerate processing temperatures and conditions required to complete the device. In some embodiments, this process flow allows the lamina to be annealed at high temperature, then to have an amorphous silicon layer formed on each face of the lamina following that anneal. A device may be formed which comprises the lamina, such as a photovoltaic cell.
PCT/US2011/066957 2010-12-29 2011-12-22 A method to form a device by constructing a support element on a thin semiconductor lamina WO2012092145A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN2011800629889A CN103348491A (en) 2010-12-29 2011-12-22 Method to form device by constructing support element on thin semiconductor lamina
EP11852246.5A EP2659517A4 (en) 2010-12-29 2011-12-22 A method to form a device by constructing a support element on a thin semiconductor lamina
JP2013547580A JP2014501456A (en) 2010-12-29 2011-12-22 Method for forming a device by building a support element on a thin semiconductor film
KR1020137017702A KR20130143100A (en) 2010-12-29 2011-12-22 A method to form a device by constructing a support element on a thin semiconductor lamina

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US12/980,427 US8101451B1 (en) 2010-12-29 2010-12-29 Method to form a device including an annealed lamina and having amorphous silicon on opposing faces
US12/980,424 2010-12-29
US12/980,424 US8173452B1 (en) 2010-12-29 2010-12-29 Method to form a device by constructing a support element on a thin semiconductor lamina
US12/980,427 2010-12-29

Publications (2)

Publication Number Publication Date
WO2012092145A2 WO2012092145A2 (en) 2012-07-05
WO2012092145A3 true WO2012092145A3 (en) 2012-11-08

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2011/066957 WO2012092145A2 (en) 2010-12-29 2011-12-22 A method to form a device by constructing a support element on a thin semiconductor lamina

Country Status (5)

Country Link
EP (1) EP2659517A4 (en)
JP (1) JP2014501456A (en)
KR (1) KR20130143100A (en)
CN (1) CN103348491A (en)
WO (1) WO2012092145A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8901010B2 (en) * 2013-03-15 2014-12-02 Sunpower Corporation Methods for improving solar cell lifetime and efficiency

Citations (3)

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US20080092949A1 (en) * 2006-09-11 2008-04-24 Silicon China Limited Method and structure for textured thermal cut for photovoltaic applications for thin films
US20100072401A1 (en) * 2008-09-25 2010-03-25 Twin Creeks Technologies, Inc. Hydrogen ion implanter using a broad beam source
US20100224238A1 (en) * 2009-03-06 2010-09-09 Twin Creeks Technologies, Inc. Photovoltaic cell comprising an mis-type tunnel diode

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JPH11214723A (en) * 1998-01-29 1999-08-06 Kyocera Corp Manufacture of solar battery element
JP2000252492A (en) * 1999-02-25 2000-09-14 Sumitomo Electric Ind Ltd Solar cell, its manufacture, and lamination-type solar cell
JP2002100791A (en) * 2000-09-21 2002-04-05 Canon Inc Manufacturing method for solar battery
JP2003017723A (en) * 2001-06-29 2003-01-17 Shin Etsu Handotai Co Ltd Method of manufacturing thin semiconductor film and method of manufacturing solar battery
JP5084146B2 (en) * 2006-01-30 2012-11-28 三洋電機株式会社 Photovoltaic module
JP5090716B2 (en) * 2006-11-24 2012-12-05 信越化学工業株式会社 Method for producing single crystal silicon solar cell
JP5248994B2 (en) * 2007-11-30 2013-07-31 株式会社半導体エネルギー研究所 Method for manufacturing photoelectric conversion device
US8129613B2 (en) * 2008-02-05 2012-03-06 Twin Creeks Technologies, Inc. Photovoltaic cell comprising a thin lamina having low base resistivity and method of making
US8481845B2 (en) * 2008-02-05 2013-07-09 Gtat Corporation Method to form a photovoltaic cell comprising a thin lamina
JP5297219B2 (en) * 2008-02-29 2013-09-25 信越化学工業株式会社 Manufacturing method of substrate having single crystal thin film
US20090242010A1 (en) * 2008-03-27 2009-10-01 Twin Creeks Technologies, Inc. Method to Form a Photovoltaic Cell Comprising a Thin Lamina Bonded to a Discrete Receiver Element
EP2105972A3 (en) * 2008-03-28 2015-06-10 Semiconductor Energy Laboratory Co, Ltd. Photoelectric conversion device and method for manufacturing the same
JP2010093186A (en) * 2008-10-10 2010-04-22 Showa Denko Kk Method of manufacturing gallium nitride-based compound semiconductor light-emitting element, layered structure of gallium nitride-based compound semiconductor element, gallium nitride-based compound semiconductor light-emitting element, and lamp
US20100139755A1 (en) * 2008-12-09 2010-06-10 Twin Creeks Technologies, Inc. Front connected photovoltaic assembly and associated methods
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Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
US20080092949A1 (en) * 2006-09-11 2008-04-24 Silicon China Limited Method and structure for textured thermal cut for photovoltaic applications for thin films
US20100072401A1 (en) * 2008-09-25 2010-03-25 Twin Creeks Technologies, Inc. Hydrogen ion implanter using a broad beam source
US20100224238A1 (en) * 2009-03-06 2010-09-09 Twin Creeks Technologies, Inc. Photovoltaic cell comprising an mis-type tunnel diode

Non-Patent Citations (1)

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Title
See also references of EP2659517A4 *

Also Published As

Publication number Publication date
CN103348491A (en) 2013-10-09
EP2659517A2 (en) 2013-11-06
JP2014501456A (en) 2014-01-20
EP2659517A4 (en) 2017-10-25
KR20130143100A (en) 2013-12-30
WO2012092145A2 (en) 2012-07-05

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