WO2008098404A3 - Method for manufacturing a single-crystal film, and integrated optical device comprising such a single-crystal film - Google Patents

Method for manufacturing a single-crystal film, and integrated optical device comprising such a single-crystal film Download PDF

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Publication number
WO2008098404A3
WO2008098404A3 PCT/CH2008/000065 CH2008000065W WO2008098404A3 WO 2008098404 A3 WO2008098404 A3 WO 2008098404A3 CH 2008000065 W CH2008000065 W CH 2008000065W WO 2008098404 A3 WO2008098404 A3 WO 2008098404A3
Authority
WO
WIPO (PCT)
Prior art keywords
crystal structure
crystal film
crystal
manufacturing
film
Prior art date
Application number
PCT/CH2008/000065
Other languages
French (fr)
Other versions
WO2008098404A2 (en
Inventor
Gorazd Poberaj
Andrea Guarino
Peter Guenter
Original Assignee
Eth Zuerich
Gorazd Poberaj
Andrea Guarino
Peter Guenter
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eth Zuerich, Gorazd Poberaj, Andrea Guarino, Peter Guenter filed Critical Eth Zuerich
Publication of WO2008098404A2 publication Critical patent/WO2008098404A2/en
Publication of WO2008098404A3 publication Critical patent/WO2008098404A3/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/06—Joining of crystals
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035—Materials
    • G02B2006/1204—Lithium niobate (LiNbO3)
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/121—Channel; buried or the like
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/1213—Constructional arrangements comprising photonic band-gap structures or photonic lattices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Element Separation (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

The invention relates to a method for manufacturing a single-crystal film, e.g. a metal oxide or organic crystal film, based on the known ion slicing technology. In a first step, ions are implanted into a donor crystal structure to form a damage layer within the crystal structure at an implantation depth below a top surface of the crystal structure, the top surface and said damage layer defining at least in part the single- crystal film to be detached from the crystal structure. Thereafter, the crystal structure is indirectly bonded to a substrate by a bonding layer between the crystal structure and the substrate, this bonding layer comprising a polymer adhesive. After curing the polymer, the laminate is exposed to a temperature increase to effect detachment of the single-crystal film from the crystal structure. The invention has the advantage of less stringent requirements for surface smoothness and flatness. Therefore, it enables a very reproducible fabrication of high-quality and large area thin films, e.g. of a metal oxide (e.g. ferroelectric) or organic crystal.
PCT/CH2008/000065 2007-02-16 2008-02-14 Method for manufacturing a single-crystal film, and integrated optical device comprising such a single-crystal film WO2008098404A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US90181207P 2007-02-16 2007-02-16
US60/901,812 2007-02-16

Publications (2)

Publication Number Publication Date
WO2008098404A2 WO2008098404A2 (en) 2008-08-21
WO2008098404A3 true WO2008098404A3 (en) 2008-12-11

Family

ID=39356557

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CH2008/000065 WO2008098404A2 (en) 2007-02-16 2008-02-14 Method for manufacturing a single-crystal film, and integrated optical device comprising such a single-crystal film

Country Status (1)

Country Link
WO (1) WO2008098404A2 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110143489A1 (en) * 2009-12-11 2011-06-16 General Electric Company Process for making thin film solar cell
FR2961515B1 (en) * 2010-06-22 2012-08-24 Commissariat Energie Atomique METHOD FOR PRODUCING A MONOCRYSTALLINE SILICON THIN LAYER ON A POLYMER LAYER
FR2961719B1 (en) * 2010-06-24 2013-09-27 Soitec Silicon On Insulator PROCESS FOR PROCESSING A PIECE OF A COMPOUND MATERIAL
WO2014035530A2 (en) 2012-06-15 2014-03-06 Gong Songbin Microelectronic structures with suspended lithium-based thin films
US9733428B2 (en) * 2013-02-04 2017-08-15 American Semiconductor, Inc. Flexible 3-D photonic device
JP6023737B2 (en) * 2014-03-18 2016-11-09 信越化学工業株式会社 Wafer processed body, temporary adhesive for wafer processing, and method for manufacturing thin wafer
JP6396852B2 (en) * 2015-06-02 2018-09-26 信越化学工業株式会社 Method for manufacturing composite wafer having oxide single crystal thin film
US9933687B1 (en) * 2017-02-15 2018-04-03 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Optimized wavelength-tuned nonlinear frequency conversion using a liquid crystal clad waveguide
CN109061910B (en) * 2018-09-11 2022-08-02 南开大学 Method for preparing submicron periodic randomly polarized pattern lithium niobate microdisk cavity
WO2023286408A1 (en) * 2021-07-14 2023-01-19 日本碍子株式会社 Waveguide element, optical scanning element and optical modulation element
WO2023181073A1 (en) * 2022-03-23 2023-09-28 University Of Hyderabad Molecular single-crystal photonic micro-resonators and method of fabricating thereof
CN114695148B (en) * 2022-03-28 2023-06-09 电子科技大学 Silicon and lithium niobate heterojunction bonding method of silicon-based photoelectronic device
CN115685598B (en) * 2022-11-14 2023-08-25 杭州视光半导体科技有限公司 Waveguide structure with core-spun electro-optic material layer, preparation method and application

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
CHEN WAYNE ET AL: "Double-flip transfer of indium phosphide layers via adhesive wafer bonding and ion-cutting process", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, vol. 90, no. 5, 2 February 2007 (2007-02-02), pages 52114 - 052114, XP012095828, ISSN: 0003-6951 *

Also Published As

Publication number Publication date
WO2008098404A2 (en) 2008-08-21

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