EP2612333B1 - Composant ceramique et methode de fabrication d'un composant ceramique - Google Patents

Composant ceramique et methode de fabrication d'un composant ceramique Download PDF

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Publication number
EP2612333B1
EP2612333B1 EP11757223.0A EP11757223A EP2612333B1 EP 2612333 B1 EP2612333 B1 EP 2612333B1 EP 11757223 A EP11757223 A EP 11757223A EP 2612333 B1 EP2612333 B1 EP 2612333B1
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EP
European Patent Office
Prior art keywords
region
diameter
main body
via electrode
connection contacts
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Active
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EP11757223.0A
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German (de)
English (en)
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EP2612333A2 (fr
Inventor
Thomas Feichtinger
Günter PUDMICH
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Electronics AG
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Epcos AG
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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/18Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material comprising a plurality of layers stacked between terminals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/1006Thick film varistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105Varistor cores

Definitions

  • the invention relates to a ceramic component, such as a varistor, and a method for producing such a component.
  • Varistors may be used to protect RF circuits from damage by electrostatic discharge.
  • the resistance is voltage-dependent and is abruptly above a certain threshold voltage smaller. As a result, charge can be discharged at a high applied voltage across the varistor.
  • the capacity of such a component can not be reduced arbitrarily, since in particular the outer electrodes contribute to a ceramic base body with a high dielectric constant to a relatively high total capacity value. Furthermore, the accuracy in the application of the comb-like internal electrodes, for example by means of a screen printing process, limited, whereby tolerances in the capacity the components arise. This also applies, for example, to process-related fluctuations of the individual layers of the ceramic base body, which are, for example, ceramic foils.
  • the WO 2007/045497 A1 describes an electrical component with a ceramic base body having a plurality of ceramic layers.
  • a functional layer adjoins a composite layer and the composite layer contains a zirconia-glass filler mixture.
  • a ceramic component comprises a base body with two connection contacts attached thereto.
  • the ceramic component further comprises a first and a second elongate via electrode, which are each coupled to one of the terminal contacts.
  • the first and the second via electrode each have an extended area in projection in the longitudinal direction of the respective via electrode.
  • One of the via electrodes has a first region with a first diameter and a second region with a second diameter different from the first diameter.
  • the base body has two regions which have mutually different dielectric constants, so that the regions of the base body facing the connection contacts each have a lower dielectric constant than the region which lies between the regions respectively facing the connection contacts is arranged.
  • the first diameter is larger than the second diameter and the first region of the via electrode is surrounded by the region of the base body having the lower dielectric constant, so that in the region with the material having a higher dielectric constant, the second region of the via Electrode is formed with the smaller cross-section.
  • the ceramic component has a capacity ⁇ 3 pF.
  • the projection of the first via electrode and the projection of the second via electrode each overlap in the longitudinal direction on a common projection plane.
  • the part of the projection in which the projections overlap is larger than a part where the projections do not overlap.
  • the area of the projection of the first via electrode on the common projection plane is smaller than the area of the projection of the second via electrode.
  • the projection of the first via electrode is arranged on the projection plane within the projection of the second via electrode. This allows production-related tolerances to be compensated.
  • a method of manufacturing a ceramic device comprises laminating a plurality of ceramic layers to a layer stack forming a base body of the ceramic device.
  • Two via electrodes are introduced transversely to the layer sequence from two opposite sides of the layer stack into the layer stack.
  • Two connection contacts are on attached to the layer stack, so that the connection contacts are each electrically coupled to one of the via electrodes.
  • recesses are punched into the layer stack and filled with an electrically conductive material.
  • One of the via electrodes has a first region with a first diameter and a second region with a second diameter different from the first diameter.
  • the main body has two regions which have mutually different dielectric constants, so that the regions of the main body facing the connection contacts have a lower dielectric constant than the region which is arranged between the regions respectively facing the connection contacts.
  • the first diameter is larger than the second diameter and the first region of the via electrode is surrounded by the region of the base body having the lower dielectric constant, so that in the region with the material having a higher dielectric constant, the second region of the via Electrode is formed with the smaller cross-section.
  • a ceramic component can be produced, which has a low capacity and can be compensated in the manufacturing tolerances.
  • FIG. 6 This refers FIG. 6 to an embodiment of the invention.
  • the Figures 1-5 and 7-9 are not related to embodiments of the invention, are all to the understanding thereof.
  • FIG 1A shows a ceramic component 100 in a cross-sectional view.
  • the ceramic component has a main body 101, which is made up of ceramic layers.
  • On two opposite side surfaces 126, 127 each have a connection contact 102, 103 is mounted for electronic contacting of the device 100.
  • an elongated via 104 extends into the body 101.
  • another via 105 extends into the body 101.
  • the via electrodes extend to an active region 125, in FIG for example, a varistor ceramic is arranged.
  • the via electrodes 104 and 105 each have, at the end facing away from the terminal contact 102 or 103, with which they are electrically coupled, a surface 106 or 107 which is extended transversely to the longitudinal direction.
  • the ceramic layers of the main body 101 are arranged in a layer stack.
  • the layers are in the Y-direction of the FIG. 1 extended extensively and in the X direction of the FIG. 1 stacked on top of each other.
  • the layers are arranged transversely to the planar extent of the connection contacts 102, 103 on each other.
  • the via electrodes 104 and 105 extend transversely to the stacking direction of the layer stack.
  • the via electrodes 104 and 105 penetrate a plurality of ceramic layers, in particular more than two ceramic layers.
  • FIG. 1B shows a sectional view of the device of Figure 1A along the plane A - A '.
  • the surface 106 and the surface 107 have, as projected in the longitudinal direction of the via electrodes on a projection plane, for example, the plane A - A ', an overlapping region.
  • the projections completely overlap, as in FIG FIG. 1B shown.
  • a diameter 115 of the via electrode 104 and the via electrode 105 transverse to the longitudinal propagation is the same size.
  • the surface area of the projection on the projection plane of the two via electrodes 104 and 105 is the same size in the illustrated embodiment.
  • the surface area of the projection of the via electrodes 104 and 105 is in each case approximately between 3500 ⁇ m 2 and 6500 ⁇ m 2 . If the projection has a circular shape, this corresponds to a diameter of about 65 microns to about 90 microns.
  • the projection of the via electrodes is circular in each case if the via electrodes 104 and 105 have a circular cylindrical shape, for example.
  • the top and top surfaces of the cylindrical shape correspond to the surface 106 of the via electrode 104 and the surface of the via electrode facing the terminal contact 102.
  • the via electrodes have a circular cylindrical shape in embodiments, but they may also have other shapes, for example an elliptical base or a rectangular base.
  • the tolerance ranges, for example, the capacity of the component can be reduced in size and hang, for example, essentially only still from a variation of the distance between the surface 106 and 107 from.
  • the via electrodes are introduced into the layer stack after the ceramic layers have been stacked.
  • the via electrodes are punched into the layer stack and then filled with an electrically conductive material, for example a paste.
  • FIG. 2 shows a further embodiment of the device 100.
  • via-electrodes 104 and 105 have different diameters 115 and 116, respectively.
  • the surface area of the via electrode 105 is greater than the surface area of the via electrode 104.
  • the two via electrodes are coaxial.
  • the projection with the smaller area is completely within the projection with the larger area. At least the overlapping portion of the two projections is larger than the portion that does not overlap.
  • FIG. 3 shows a further embodiment of the device 100.
  • the device 100 has a further via-electrode 108, which is arranged between the via-electrode 104 and the via-electrode 105.
  • the additional via electrode 108 is preferably coaxial with the via electrodes 104 and 105. In projection in the longitudinal propagation direction of the via electrodes, the projections of the three via electrodes 104, 105 and 108 overlap, preferably completely. Between the surface 106 of the via electrode 104 and an opposite surface 109 of the via electrode 108, a varistor ceramic is arranged. Between the surface 107 of the via electrode 105 and an opposite surface 110 of the via electrode 108, a further layer comprising a varistor ceramic is arranged.
  • FIGS. 4A and 4B show a further embodiment of the device 100, in which, in contrast to the previous embodiments, two via-electrodes are each coupled to one of the terminal contacts.
  • the via electrode 104 and another via electrode 111 is electrically coupled.
  • the via electrode 105 and another via electrode 112 is electrically coupled.
  • the via electrodes 104 and 111 or 105 and 112 are rectilinear, preferably parallel, starting at the respective terminal contacts in the longitudinal direction into the interior of the main body 101 to the active area.
  • FIG. 4B is a sectional view taken along the plane A - A 'of FIG. 4A shown. Dashed lines show the projection of the via electrodes 105 and 112 on the plane A - A '.
  • the projection of the via electrodes 104 and 112 surround the cross section of the via electrode 104 and the via electrode 111, respectively.
  • the projections of the via electrodes 104 and 105 or 111 and 112 in each case completely overlap.
  • the projections of the via electrodes 104 and 111 which have the smaller surface area, are each completely arranged within the projections of the via electrodes 104 and 111, respectively.
  • FIGS. 5A and 5B show a further embodiment of the device 100, wherein the body comprises materials with mutually different dielectric constants.
  • a region 117 of the main body 101 which faces the terminal contact 102 and has a common contact surface (side surface 126) with it, has a lower dielectric constant than a region 118 of the main body 101, which extends in the direction away from the terminal contact 102 to the region 117 followed.
  • a region 119 of the main body 101 which faces the terminal contact 103 and has a common contact surface (side surface 127) with it, in turn has a lower dielectric constant than the region 118, preferably the same dielectric constant as the region 117
  • Areas 117 and 119 have the lower dielectric constant than a material 121 of the region 118.
  • the regions 117, 118 and 119 may each be formed of a plurality of ceramic layers.
  • the ceramic layers of the regions 117, 118 and 119 are stacked on each other transversely to the longitudinal direction of the via electrodes.
  • Device 100 has a low capacity, in particular a capacity of ⁇ 5 pF, preferably a capacity ⁇ 3 pF. Since the via electrodes 104 and 105 are surrounded in the regions 117 and 119 by the material 120, which has a low dielectric constant, electrical scattering effects from the regions 117 and 119 can be reduced. In order to reduce, preferably prevent, a chemical reaction between high and low dielectric layers, region 118 is made thicker. In particular, a part of the via electrodes is arranged in the region 118.
  • FIG. 5B shows a sectional view taken along the plane A - A 'of FIG. 5A , Along the plane A - A ', the via electrode 105 is surrounded by the material 120 having the comparatively low dielectric constant.
  • FIG. 6 shows a further embodiment of the device 100, in which the via electrodes 104 and 105 each have along their longitudinal propagation direction transverse to the direction L Lucassweitreitreitungsraum different expansions.
  • a region 123 of the via electrode 105 which is surrounded by the material 120, a greater extent transverse to the longitudinal propagation, as in the subsequent region 124 of the via electrode 105.
  • the region 124 has the diameter 115 and the region 123 has a diameter 122 which is larger as the diameter 115.
  • the via electrodes 104 and 105 can be electrically coupled to the corresponding connection contacts 102 and 103, respectively.
  • the regions 123 are arranged in the material 120.
  • the via electrodes are formed with a smaller cross section than in the regions 123.
  • FIG. 7 shows the device 100 in a perspective view.
  • the component has, for example, zirconium oxide, ZnO-BI and / or ZnO-PR as varistor ceramics.
  • the component may comprise condenser materials, in particular C0G, X7R, Z5U, Y5V and / or HQM.
  • FIG. 8 shows a further embodiment of the device 100 in a perspective view, in which 101 four connection contacts are arranged on the base body. On the side surface 127 of the base 101, two connection contacts 103 are arranged. On the opposite side surface 126 two connection contacts 102 are arranged. Each terminal contact extends a via electrode in the direction of the opposite terminal contact through a portion of the body.
  • the device 100 according to the embodiment of the figure For example, FIG. 8 has a device area of ⁇ 5.12 mm 2 , preferably a device area of 2.5 mm 2 .
  • FIG. 9 shows the device 100 according to another embodiment with eight terminals 102 and 103, respectively. For each side surface 126 and 127, four terminals 102 and 103 are arranged. For each terminal contact, a via electrode extends into the interior of the main body 101. In further embodiments, a plurality of via electrodes, for example two via electrodes, extend into the interior of the main body 101 per terminal contact.
  • the component 100 according to the embodiment of FIG. 9 has, for example, a component area of ⁇ 8 mm 2 , in particular a component area of 5.12 mm 2 .
  • varistor arrays are formed, which comprise a plurality of individual varistors.
  • the invention is not limited by the description based on the embodiments of these.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Thermistors And Varistors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Claims (9)

  1. Élément structural en céramique, comprenant :
    - un corps de base (101) sur lequel sont montés deux contacts de raccordement (102, 103),
    - une première (104) et une deuxième (105) électrode de traversée allongée, lesquelles sont respectivement connectées électriquement à l'un des contacts de raccordement (102, 103),
    - la première (104) et la deuxième (105) électrode de traversée possédant respectivement une surface étendue (106, 107) en projection dans la direction longitudinale de l'électrode de traversée (104, 105) correspondante,
    - avec lequel l'une des électrodes de traversée (104, 105) possède une première zone (123) ayant un premier diamètre (122) et une deuxième zone (124) ayant un deuxième diamètre (115) différent du premier diamètre (122),
    - avec lequel le corps de base (101) possède deux zones (117, 118) qui présentent des indices diélectriques différents l'un de l'autre, de sorte que les zones (117, 119) du corps de base (101) faisant face aux contacts de raccordement (102, 103) présentent respectivement un indice diélectrique plus faible à celui de la zone (118) qui est disposée entre les zones (117, 119) faisant respectivement face aux contacts de raccordement (102, 103),
    - avec lequel le premier diamètre (122) est plus grand que le deuxième diamètre (115),
    - la première zone (123) de l'électrode de traversée (104, 105) étant entourée par la zone (117, 119) du corps de base (101) qui présente l'indice diélectrique le plus faible, caractérisé en ce que dans la zone (118) du corps de base qui présente un indice diélectrique plus élevé, la deuxième zone (124) de l'électrode de traversée (104, 105) est formée avec le diamètre le plus petit.
  2. Élément structural en céramique selon la revendication 1, avec lequel la projection de la première électrode de traversée (104) et la projection de la deuxième électrode de traversée (105) se chevauchent au moins partiellement.
  3. Élément structural en céramique selon la revendication 1 ou 2, avec lequel les surfaces (106, 107) des projections sont de la même taille.
  4. Élément structural en céramique selon la revendication 1 ou 2, avec lequel la surface (106) de la projection de la première électrode de traversée (104) est plus petite que la surface (107) de la projection de la deuxième électrode de traversée (105).
  5. Élément structural en céramique selon l'une des revendications 1 à 4, avec lequel la première (104) et la deuxième (105) électrode de traversée présentent respectivement une forme cylindrique.
  6. Élément structural en céramique selon l'une des revendications 1 à 5, avec lequel une électrode de traversée supplémentaire (108) est disposée entre les extrémités de la première (104) et de la deuxième (105) électrode de traversée qui sont à l'opposé des contacts de raccordement (102, 103).
  7. Élément structural en céramique selon l'une des revendications 1 à 6, avec lequel une céramique de varistance (125) est disposée entre la première (104) et la deuxième (105) électrode de traversée.
  8. Procédé de fabrication d'un élément structural en céramique, comprenant :
    - disposition en couches d'une pluralité de couches de céramique (117, 118, 119) en un empilement de couches, lequel forme un corps de base (101) de l'élément structural en céramique,
    - introduction de deux électrodes de traversée (104, 105) dans l'empilement de couches transversalement à la séquence de couches depuis deux côtés opposés de l'empilement de couches, de sorte que
    - l'une des électrodes de traversée (104, 105) possède une première zone (123) ayant un premier diamètre (122) et une deuxième zone (124) ayant un deuxième diamètre (115) différent du premier diamètre (122),
    - application de deux contacts de raccordement (102, 103) sur l'empilement de couches, de sorte que les contacts de raccordement (102, 103) sont respectivement connectés électriquement à l'une des électrodes de traversée (104, 105), les couches de céramique étant disposées en couche de telle sorte que le corps de base (101) possède deux zones (117, 118) qui présentent des indices diélectriques différents l'un de l'autre, de sorte que les zones (117, 119) du corps de base (101) faisant face aux contacts de raccordement (102, 103) présentent respectivement un indice diélectrique plus faible à celui de la zone (118) qui est disposée entre les zones (117, 119) faisant respectivement face aux contacts de raccordement (102, 103), et procédé selon lequel
    - les électrodes de traversée (104, 105) sont introduites de telle sorte que le premier diamètre (122) est plus grand que le deuxième diamètre (115), la première zone (123) de l'électrode de traversée (104, 105) étant entourée par la zone (117, 119) du corps de base (101) qui présente l'indice diélectrique le plus faible, caractérisé en ce que dans la zone (118) du corps de base qui présente un indice diélectrique plus élevé, la deuxième zone (124) de l'électrode de traversée (104, 105) est formée avec le diamètre le plus petit.
  9. Procédé selon la revendication 8, selon lequel l'introduction des électrodes de traversée (104, 105) comprend .
    - respectivement poinçonnage de cavités dans l'empilement de couches (101),
    - remplissage des cavités avec un matériau électriquement conducteur.
EP11757223.0A 2010-09-03 2011-08-31 Composant ceramique et methode de fabrication d'un composant ceramique Active EP2612333B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010036270.0A DE102010036270B4 (de) 2010-09-03 2010-09-03 Keramisches Bauelement und Verfahren zur Herstellung eines keramischen Bauelements
PCT/EP2011/065049 WO2012028659A2 (fr) 2010-09-03 2011-08-31 Composant en céramique et procédé de fabrication dudit composant

Publications (2)

Publication Number Publication Date
EP2612333A2 EP2612333A2 (fr) 2013-07-10
EP2612333B1 true EP2612333B1 (fr) 2016-07-13

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Family Applications (1)

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EP11757223.0A Active EP2612333B1 (fr) 2010-09-03 2011-08-31 Composant ceramique et methode de fabrication d'un composant ceramique

Country Status (5)

Country Link
EP (1) EP2612333B1 (fr)
JP (1) JP5716092B2 (fr)
CN (1) CN103210456B (fr)
DE (1) DE102010036270B4 (fr)
WO (1) WO2012028659A2 (fr)

Families Citing this family (5)

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Publication number Priority date Publication date Assignee Title
JP6187590B2 (ja) * 2013-09-02 2017-08-30 株式会社村田製作所 可変容量素子
CN107251178B (zh) * 2015-02-27 2019-03-22 株式会社村田制作所 可变电容元件
WO2016136772A1 (fr) * 2015-02-27 2016-09-01 株式会社村田製作所 Élément à capacité variable
KR101808794B1 (ko) * 2015-05-07 2018-01-18 주식회사 모다이노칩 적층체 소자
DE102016108604A1 (de) * 2016-05-10 2017-11-16 Epcos Ag Vielschichtbauelement und Verfahren zur Herstellung eines Vielschichtbauelements

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JPS6049621U (ja) * 1983-09-14 1985-04-08 松下電器産業株式会社 積層セラミックコンデンサ
DE3930000A1 (de) 1988-09-08 1990-03-15 Murata Manufacturing Co Varistor in schichtbauweise
JPH0644101U (ja) * 1992-11-09 1994-06-10 株式会社村田製作所 チップ型正特性サーミスタ素子
JPH06314602A (ja) * 1993-04-28 1994-11-08 Tdk Corp セラミック電子部品
JPH1050548A (ja) * 1996-08-01 1998-02-20 Nippon Chemicon Corp 積層セラミックコンデンサ
JPH11297508A (ja) * 1998-04-09 1999-10-29 Matsushita Electric Ind Co Ltd 積層型セラミック電子部品
DE19931056B4 (de) 1999-07-06 2005-05-19 Epcos Ag Vielschichtvaristor niedriger Kapazität
JP2001043954A (ja) * 1999-07-30 2001-02-16 Tokin Corp サージ吸収素子及びその製造方法
JP2001185440A (ja) * 1999-12-24 2001-07-06 Kyocera Corp 積層セラミックコンデンサ
JP2002246752A (ja) * 2001-02-19 2002-08-30 Murata Mfg Co Ltd セラミック多層基板のビアホール構造
JP2006222442A (ja) * 2002-10-30 2006-08-24 Kyocera Corp コンデンサ、及び配線基板
DE10313891A1 (de) * 2003-03-27 2004-10-14 Epcos Ag Elektrisches Vielschichtbauelement
DE102004031878B3 (de) * 2004-07-01 2005-10-06 Epcos Ag Elektrisches Mehrschichtbauelement mit zuverlässigem Lötkontakt
JP2006245367A (ja) * 2005-03-04 2006-09-14 Matsushita Electric Ind Co Ltd バリスタおよびその製造方法
DE102005028498B4 (de) * 2005-06-20 2015-01-22 Epcos Ag Elektrisches Vielschichtbauelement
DE102005050638B4 (de) * 2005-10-20 2020-07-16 Tdk Electronics Ag Elektrisches Bauelement
JP4961885B2 (ja) * 2006-08-03 2012-06-27 Tdk株式会社 積層電子部品
JP2009152348A (ja) * 2007-12-20 2009-07-09 Panasonic Corp 静電気対策部品
JP2010123613A (ja) * 2008-11-17 2010-06-03 Murata Mfg Co Ltd セラミック電子部品及びセラミック電子部品の実装構造
DE102009007316A1 (de) 2009-02-03 2010-08-05 Epcos Ag Elektrisches Vielschichtbauelement

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Publication number Publication date
DE102010036270A1 (de) 2012-03-08
JP5716092B2 (ja) 2015-05-13
DE102010036270B4 (de) 2018-10-11
EP2612333A2 (fr) 2013-07-10
JP2013536989A (ja) 2013-09-26
CN103210456B (zh) 2016-08-10
CN103210456A (zh) 2013-07-17
WO2012028659A3 (fr) 2012-07-26
WO2012028659A2 (fr) 2012-03-08

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