EP2601692B1 - Light-emitting diode chip - Google Patents
Light-emitting diode chip Download PDFInfo
- Publication number
- EP2601692B1 EP2601692B1 EP11743486.0A EP11743486A EP2601692B1 EP 2601692 B1 EP2601692 B1 EP 2601692B1 EP 11743486 A EP11743486 A EP 11743486A EP 2601692 B1 EP2601692 B1 EP 2601692B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- emitting diode
- light
- diode chip
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Not-in-force
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- 238000005538 encapsulation Methods 0.000 claims description 64
- 239000000463 material Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 24
- 230000005855 radiation Effects 0.000 claims description 14
- 229910052709 silver Inorganic materials 0.000 claims description 12
- 239000004332 silver Substances 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 238000002161 passivation Methods 0.000 description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 230000005670 electromagnetic radiation Effects 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- -1 nitride compound Chemical class 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Definitions
- a light-emitting diode chip is specified.
- One object to be achieved consists in specifying a light-emitting diode chip which is particularly stable in respect of aging.
- the light-emitting diode chip comprises an n-conducting region, a p-conducting region and an active region, which is arranged between the n-conducting region and the p-conducting region.
- the n-conducting region and the p-conducting region are formed for example by correspondingly doped semiconductor regions.
- the active region is provided in operation of the light-emitting diode chip for generating electromagnetic radiation for example from the wavelength range of infrared radiation to UV radiation.
- the active region can comprise for example a pn junction, a single quantum well structure or a multiple quantum well structure.
- the active region can comprise a plurality of radiation-generating layers.
- the light-emitting diode chip that is to say for example the n-conducting region, the p-conducting region and/or the active region, are based for example on a nitride semiconductor. That means that the regions or at least parts of the regions comprise a nitride compound semiconductor material such as Al n Ga m In 1-n-m N or consist of said material, where it holds true that: 0 ⁇ n ⁇ 1, 0 ⁇ m ⁇ 1 and n + m ⁇ 1. In this case, said material need not necessarily have a mathematically exact composition according to the above formula. Rather, it can comprise for example one or a plurality of dopants and additional constituents.
- a nitride compound semiconductor material such as Al n Ga m In 1-n-m N or consist of said material, where it holds true that: 0 ⁇ n ⁇ 1, 0 ⁇ m ⁇ 1 and n + m ⁇ 1.
- said material need not necessarily have a mathematically exact
- the light-emitting diode chip comprises a mirror layer, which is arranged at that side of the p-conducting region which is remote from the active region.
- the mirror layer can for example directly adjoin the p-conducting region.
- the mirror layer is provided for reflecting electromagnetic radiation generated in the active region during the operation of the light-emitting diode chip in a direction of the n-conducting region.
- the light-emitting diode chip comprises an encapsulation layer at that side of the mirror layer which is remote from the p-conducting region.
- the encapsulation layer can be in direct contact with the mirror layer.
- the encapsulation layer serves as a barrier for the mirror layer and inhibits or prevents for example the penetration of moisture into the mirror layer.
- the encapsulation layer can be suitable for preventing the diffusion of material with which the mirror layer is formed into the p-conducting region, for example.
- the light-emitting diode chip comprises a contact layer, which is arranged at a side of the encapsulation layer which is remote from the mirror layer.
- the contact layer can be for example in direct contact with the encapsulation layer.
- the encapsulation layer extends along a bottom area of the mirror layer which is remote from the p-conducting region and a side area of the mirror layer which runs transversally, for example perpendicularly, with respect to the bottom area.
- the encapsulation layer can be in direct contact with the mirror layer.
- the encapsulation layer can completely cover the mirror layer.
- the contact layer is freely accessible in places from its side facing the n-conducting region. That is to say that, in particular, the encapsulation layer does not cover the contact layer in places, such that the contact layer can be directly electrically contact-connected from outside the light-emitting diode chip.
- the contact-connection can be effected from a direction of the n-conducting region, for example by means of a contact-connecting wire, which can be fixed to the contact layer.
- the light-emitting diode chip comprises an n-conducting region, a p-conducting region and an active region, which is arranged between the n-conducting region and the p-conducting region. Furthermore, the light-emitting diode chip comprises a mirror layer at that side of the p-conducting region which is remote from the active region, an encapsulation layer at that side of the mirror layer which is remote from the p-conducting region, and a contact layer at a side of the encapsulation layer which is remote from the mirror layer.
- the encapsulation layer extends along a bottom area of the mirror layer which is remote from the p-conducting region and a side area of the mirror layer which runs transversely with respect to the bottom area, and the contact layer is freely accessible in places from its side facing the n-conducting region.
- the light-emitting diode chip comprises an opening extending through the n-conducting region, the p-conducting region, the active region, the mirror layer and the encapsulation layer as far as the contact layer.
- the opening can be introduced into said regions and layers by means of etching, for example.
- the opening completely penetrates through the light-emitting diode chip proceeding from the n-conducting region as far as the contact layer.
- the contact layer is uncovered and thus freely accessible in places from its side facing the n-conducting region.
- the opening can be situated in an edge region of the light-emitting diode chip, such that it is not completely delimited by the n-conducting region, by the p-conducting region, by the active region, by the mirror layer and by the encapsulation layer in a lateral direction.
- the lateral direction is that direction which runs parallel to a main extension plane of the light-emitting diode chip.
- the opening is also possible for the opening to be arranged in a central region of the light-emitting diode chip, such that the opening is surrounded in a lateral direction on all sides by the n-conducting region, by the p-conducting region, by the active region, by the mirror layer and by the encapsulation layer.
- the side area of the mirror layer which faces the opening is completely covered by the encapsulation layer. Through the opening, which also extends through the mirror layer, side areas of the mirror layer would be uncovered in the opening if the encapsulation layer did not extend along said side areas.
- the p-conducting layer projects beyond the mirror layer in the region of the opening in the lateral direction. That is to say that the mirror layer does not terminate flush with the p-conducting layer for example in the opening, but rather is pulled back in comparison with the p-conducting layer.
- the cavity thereby produced - for example a hollow groove -, which is established as a result of the overhang of the p-conducting layer beyond the mirror layer, is preferably completely filled with the material of the encapsulation layer. In the region of the overhang, therefore, the encapsulation layer can directly adjoin the bottom area of the p-conducting region which faces the contact layer. For example, the encapsulation layer in the opening projects beyond the p-conducting layer in the lateral direction.
- the contact layer is wire-contact-connectable in places in the region of the opening. That is to say that the opening is embodied with a size such that a wire contact-connection to the contact layer can be effected in the opening for example by means of "wire bonding".
- the contact layer is formed with a wire-contact-connectable material.
- the contact layer contains or consists of, for this purpose, for example, one of the following materials: Al, Au.
- the light-emitting diode chip comprises a radiation passage area, which is formed in places by an outer area of the n-conducting region which is remote from the p-conducting region. At least part of the electromagnetic radiation emitted by the light-emitting diode chip during operation passes through said radiation passage area before its emergence from the light-emitting diode chip or during its emergence from the light-emitting diode chip. In this case, a current distribution for energizing the active region during operation of the light-emitting diode chip is effected below the radiation passage area.
- the encapsulation layer comprises at least one of the following materials, that is to say that the encapsulation layer can consist of one of the following materials, contain one of the following materials or contain a combination of at least two of the following materials or consist of a combination of at least two of the following materials: TiN, TiWN, Pt, W, PtTiWN, Ti.
- the encapsulation layer it is also possible for the encapsulation layer to be embodied in a multilayered fashion, wherein the encapsulation layer has, for example, at least one sublayer formed with TiWN and at least one sublayer formed with TiN.
- a plurality of said sublayers can be arranged in an alternating order one above another.
- an outer area of the encapsulation layer has traces of an etching method in places. That is to say that parts of the encapsulation layer are removed in the opening by means of an etching process.
- the mirror layer contains silver or consists of silver.
- Silver is particularly sensitive to moisture; furthermore, positively charged silver ions tend, in the electric field that occurs during the operation of the light-emitting diode chip, toward migration into other regions of the light-emitting diode chip, where they can lead to damage, such as, for example, low-current weaknesses or short circuits.
- the encapsulation layer described here which also encapsulates a side area of the mirror layer metallically, for example, therefore proves to be particularly advantageous.
- a method for producing a light-emitting diode chip is specified.
- a light-emitting diode chip described here can be produced by means of the method. That is to say that the features disclosed for the light-emitting diode chip are also disclosed for the method, and vice versa.
- the method has the following steps, for example, wherein the specified order of the steps is advantageous in this case:
- a mirror layer is applied to an outer area of the p-conducting region, for example at that side of the p-conducting region which is remote from the active region.
- an opening is produced in the mirror layer, which extends as far as the p-conducting region. That is to say that the mirror layer is removed in the region of the opening, such that the p-conducting region arranged below the mirror layer is uncovered.
- an encapsulation layer is applied to the bottom area of the mirror layer which is remote from the p-conducting region, and is introduced into the opening.
- a contact layer is applied to that side of the encapsulation layer which is remote from the mirror layer.
- the contact layer is uncovered from that side of the p-conducting region which is remote from the contact layer in the region of the opening of the mirror layer.
- material of the n-conducting region, of the active region, of the p-conducting region, of the mirror layer and of the encapsulation layer can be removed in places.
- the uncovering takes place in the region of the opening of the mirror layer in such a way that part of the encapsulation layer remains present at the side areas of the mirror layer, such that the side areas of the mirror layer remain completely covered by the material of the encapsulation layer.
- Figure 1P shows an exemplary embodiment of a light-emitting diode chip described here on the basis of a schematic sectional illustration.
- the light-emitting diode chip comprises a carrier 12.
- the carrier 12 serves for mechanically stabilizing the layers of the light-emitting diode chip which are applied to it.
- the carrier is embodied in electrically conductive fashion.
- the carrier 12 can be formed for example with a semiconductor material or a metal.
- the carrier 12 contains or consists of one of the following materials: germanium, silicon, copper, nickel, molybdenum.
- the carrier 12 is succeeded by a contact layer 11.
- the contact layer 11 contains gold, for example.
- An encapsulation layer 10 is arranged at that side of the contact layer 11 which is remote from the carrier 12, said encapsulation layer containing for example titanium, tungsten and/or a nitride, for example of said materials.
- the metal layer 9 is formed at that side of the encapsulation layer 10 which is remote from the contact layer 11, said metal layer for example containing one of the following metals or consisting of one of the following metals: silver, gold.
- the contact layer 11 and the encapsulation layer 10 between the carrier 12 and the metal layer 9 to be formed by, for example, the following layer sequence: Ti/TiWN/TiPtAu.
- the titanium layer faces the metal layer 9 and proves to be particularly advantageous in particular in the case of a metal layer 9 composed of silver.
- the light-emitting diode chip in accordance with figure 1P furthermore comprises an n-doped region 1, a p-doped region 2 and also an active zone 3, which is formed between the n-doped region 1 and the p-doped region 2.
- the active zone 3 serves for generating electromagnetic radiation during the operation of the light-emitting diode chip.
- the mirror layer 4 is arranged at that side of the p-conducting region 2 which is remote from the n-conducting region.
- the mirror layer 4 is covered by an encapsulation layer 5 at its bottom area 43 remote from the p-conducting region 2, and also at its side areas 42 that are uncovered in the opening 13.
- the regions 1, 2 and 3 formed with a semiconductor material are based, for example, on the nitride compound semiconductor material described in greater detail above.
- the mirror layer 4 is formed with silver, for example; the encapsulation layer 5 contains or consists of at least one of the following materials or material combinations: TiN, TiWN, Pt, W, PtTiWN, TCO (transparent conductive oxide)-materials like ITO or ZnO.
- the contact layer 6 is adjacent to that side of the encapsulation layer 5 which is remote from the mirror layer, said contact layer being formed in the present case with aluminum or gold, for example.
- the opening 13 in the light-emitting diode chip is formed into the semiconductor body, formed through the regions 1, 2 and 3 and also through the mirror layer 4 and the encapsulation layer 5, and the contact layer 6 is uncovered at its bottom area.
- Contact can be made there with the light-emitting diode chip by means of a contact wire, for example.
- the light-emitting diode chip is connected on the p side by means of the contact wire, for example.
- the light-emitting diode chip can have a further opening (not shown) from which the light-emitting diode chip can be electrically conductively connected on the n side.
- contact is made with the light-emitting diode chip through the carrier 12.
- contact regions 8 are formed, in which the metal layer 9 is in electrically conductive contact with the n-conducting region 1 of the light-emitting diode chip.
- the contact regions 8 are formed in perforations through the passivation layer 7.
- the passivation layer 7 contains silicon dioxide, for example, or consists thereof.
- the passivation layer 7 serves for electrically isolating the p-side contact layer 6 from the n-side contact layer 11.
- the encapsulation layer 5 completely covers the mirror layer 4 at its side areas 42 that are otherwise uncovered in the opening 13. In this case, the p-conducting region projects beyond the mirror layer 4 in a lateral direction 1 in the region of the opening 13. The cavity thus produced is filled with the encapsulation layer 5.
- the encapsulation layer 5 extends from the side areas 42 along the bottom area 43 of the mirror layer 4 and in this way provides for protection of the mirror layer 4, for example against penetrating moisture.
- the current distribution for operating the light-emitting diode chip is formed completely below the radiation passage area 102, which is situated at that side of the n-conducting region 1 which is remote from the carrier 12.
- At least the regions of the light-emitting diode chip which are formed with a semiconductor material can be covered at their uncovered outer area by a further passivation layer 14, which, by way of example, consists of silicon oxide or silicon nitride and can be applied by means of a CVD method.
- a method for producing a light-emitting diode chip described herein is explained in greater detail with reference to figures 1A to 1P .
- a p-conducting region 2 is provided in the method step in figure 1A .
- the p-conducting region 2 is produced epitaxially.
- an n-conducting region 1 can be deposited onto a growth substrate 100, which consists of sapphire, for example.
- the active region 3 is formed onto the outer area of the n-conducting region 1 which is remote from the growth substrate 100, said active region being succeeded by the p-conducting region 2.
- the mirror layer 4 is applied, for example by vapor deposition, onto that side of the p-conducting region 2 which is remote from the growth substrate 100 at the outer area 21 of the p-conducting region 2.
- the mirror layer 4 consists of silver, for example.
- an opening 41 is produced in the mirror layer 4 for example by means of etching.
- the side area 42 or the side areas 42 of the mirror layer 4 and also the p-conducting region are uncovered in or at the opening 41.
- the outer area of the mirror layer 4 which lies opposite the p-conducting region 2 later forms the bottom area 43, figure 1C .
- That side of the encapsulation layer 5 which is remote from the mirror layer 4 is succeeded by the contact layer 6, which, for example, alongside gold, can also contain Ti/Cr.
- the thickness of the contact layer 6 is chosen in such a way that the necessary current spreading is ensured in the later light-emitting diode chip, figure 1D .
- a subsequent method step, figure 1E involves patterning the encapsulation layer 5, the contact layer 6, the mirror layer 4 and also the p-conducting region 2 and the active region 3.
- the layers 4, 5, 6 are patterned wet-chemically or by means of back-sputtering. A phototechnology is used for this purpose, for example.
- the mask (not shown) used for this the uncovered p-conducting region 2 is then neutralized or removed. This can be effected, for example, by means of Ar back-sputtering with or without the p-conducting region 2 being removed in places.
- the remaining patterned p-conducting region 2 projects beyond the mirror layer 4 in a lateral direction 1 by at least 1 ⁇ m, for example by approximately 2 ⁇ m.
- a passivation layer 7 is applied to the side remote from the growth substrate 100, which layer has a thickness of at least 400 nm, for example.
- the passivation layer 7 can be applied for example by means of a TEOS precursor that is used in a CVD process in order to improve the overmolding properties, in this respect cf. figure 1F .
- the passivation layer 7 is opened in places and the contact regions 8 are formed by introducing metal.
- the contact regions 8 form an n-type contact, which completely circumferentially encapsulates the active region 3 metallically.
- silver can be introduced into the openings of the passivation layer 7, see figure 1G .
- the method step in figure 1H involves applying the metal layer 9, which contains silver, for example, and which can be applied by means of evaporation, for example.
- the metal layer 9 completely covers the structures formed at the side remote from the growth substrate and therefore also serves for planarization.
- the next method step, figure 1I involves applying the further encapsulation layer 10 and the further contact layer 11 as described in conjunction with figure 1P .
- the carrier 12 is bonded on or deposited electrolytically, figure 1J .
- the growth substrate 100 is stripped away for example by means of a laser separating process or chemomechanically.
- the n-conducting region 1 can subsequently be roughened at the radiation passage area 102. This is done by means of KOH etching, for example, figure 1L .
- the subsequent method step, figure 1M involves producing the opening 13, which penetrates the n-conducting region 1, the active region 3 and also the p-conducting region 2.
- the encapsulation layer 5 is initially uncovered.
- the opening 13 can be produced by means of hot H 3 PO 4 which stops on the passivation layer 7 and the encapsulation layer 5.
- a mesa etch can be effected optionally, indicated by the dashed regions of the n-conducting region 1.
- a further passivation layer 14 composed of silicon dioxide, for example, is applied by means of CVD.
- the encapsulation layer 5 is etched in the opening 13, such that the contact layer 6 is uncovered at the bottom area of the opening 13.
- singulation into a multiplicity of light-emitting diode chips, figure 1P is effected by means of laser separation, for example.
- the invention is not restricted to the exemplary embodiments by the description on the basis of said exemplary embodiments.
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- Led Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102010033137A DE102010033137A1 (de) | 2010-08-03 | 2010-08-03 | Leuchtdiodenchip |
PCT/EP2011/062745 WO2012016874A1 (en) | 2010-08-03 | 2011-07-25 | Light-emitting diode chip |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2601692A1 EP2601692A1 (en) | 2013-06-12 |
EP2601692B1 true EP2601692B1 (en) | 2016-10-05 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP11743486.0A Not-in-force EP2601692B1 (en) | 2010-08-03 | 2011-07-25 | Light-emitting diode chip |
Country Status (7)
Country | Link |
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US (1) | US8860063B2 (zh) |
EP (1) | EP2601692B1 (zh) |
KR (1) | KR101760977B1 (zh) |
CN (1) | CN103098242B (zh) |
DE (1) | DE102010033137A1 (zh) |
TW (1) | TWI472063B (zh) |
WO (1) | WO2012016874A1 (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102010033137A1 (de) | 2010-08-03 | 2012-02-09 | Osram Opto Semiconductors Gmbh | Leuchtdiodenchip |
DE102011011140A1 (de) | 2011-02-14 | 2012-08-16 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung von optoelektronischen Halbleiterchips |
DE102012108879B4 (de) * | 2012-09-20 | 2024-03-28 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip mit mehreren nebeneinander angeordneten aktiven Bereichen |
CN103715367B (zh) * | 2013-12-24 | 2016-03-30 | 合肥京东方光电科技有限公司 | 有机发光二极管及电子设备 |
DE102014103828A1 (de) * | 2014-03-20 | 2015-09-24 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung von optoelektronischen Halbleiterbauelementen |
DE102014111482A1 (de) * | 2014-08-12 | 2016-02-18 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung |
DE102015120323A1 (de) | 2015-11-24 | 2017-05-24 | Osram Opto Semiconductors Gmbh | Leuchtdiodenchip mit einer reflektierenden Schichtenfolge |
US9923007B2 (en) * | 2015-12-29 | 2018-03-20 | Viavi Solutions Inc. | Metal mirror based multispectral filter array |
DE102020104372A1 (de) * | 2020-01-15 | 2021-07-15 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip |
JP7223941B2 (ja) * | 2020-12-18 | 2023-02-17 | 日亜化学工業株式会社 | 発光素子の製造方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI220578B (en) * | 2003-09-16 | 2004-08-21 | Opto Tech Corp | Light-emitting device capable of increasing light-emitting active region |
JP2006269807A (ja) | 2005-03-24 | 2006-10-05 | Sony Corp | 半導体発光ダイオード |
KR100640496B1 (ko) * | 2005-11-23 | 2006-11-01 | 삼성전기주식회사 | 수직구조 질화갈륨계 발광다이오드 소자 |
JP4946195B2 (ja) | 2006-06-19 | 2012-06-06 | サンケン電気株式会社 | 半導体発光素子及びその製造方法 |
WO2008060615A1 (en) * | 2006-11-15 | 2008-05-22 | The Regents Of The University Of California | Transparent mirrorless light emitting diode |
KR100849826B1 (ko) | 2007-03-29 | 2008-07-31 | 삼성전기주식회사 | 발광소자 및 이를 포함하는 패키지 |
DE102007022947B4 (de) * | 2007-04-26 | 2022-05-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen |
US20090026470A1 (en) * | 2007-07-23 | 2009-01-29 | Novalite Optronics Corp. | Super thin side-view light-emitting diode (led) package and fabrication method thereof |
KR101371511B1 (ko) * | 2007-10-04 | 2014-03-11 | 엘지이노텍 주식회사 | 수직형 발광 소자 |
KR100891761B1 (ko) | 2007-10-19 | 2009-04-07 | 삼성전기주식회사 | 반도체 발광소자, 그의 제조방법 및 이를 이용한 반도체발광소자 패키지 |
TWI420722B (zh) * | 2008-01-30 | 2013-12-21 | Osram Opto Semiconductors Gmbh | 具有封裝單元之裝置 |
DE102008012407A1 (de) * | 2008-01-31 | 2009-08-06 | Osram Opto Semiconductors Gmbh | Strahlungsemittierende Vorrichtung |
DE102008030584A1 (de) * | 2008-06-27 | 2009-12-31 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Bauelementes und optoelektronisches Bauelement |
DE102008051048A1 (de) * | 2008-10-09 | 2010-04-15 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterkörper |
DE102009022966A1 (de) * | 2009-05-28 | 2010-12-02 | Osram Opto Semiconductors Gmbh | Oberflächenmontierbarer optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines oberflächenmontierbaren optoelektronischen Halbleiterchips |
DE102010024079A1 (de) | 2010-06-17 | 2011-12-22 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
DE102010033137A1 (de) | 2010-08-03 | 2012-02-09 | Osram Opto Semiconductors Gmbh | Leuchtdiodenchip |
-
2010
- 2010-08-03 DE DE102010033137A patent/DE102010033137A1/de not_active Withdrawn
-
2011
- 2011-07-25 KR KR1020137005266A patent/KR101760977B1/ko active IP Right Grant
- 2011-07-25 US US13/813,934 patent/US8860063B2/en not_active Expired - Fee Related
- 2011-07-25 CN CN201180038147.4A patent/CN103098242B/zh not_active Expired - Fee Related
- 2011-07-25 WO PCT/EP2011/062745 patent/WO2012016874A1/en active Application Filing
- 2011-07-25 EP EP11743486.0A patent/EP2601692B1/en not_active Not-in-force
- 2011-08-01 TW TW100127200A patent/TWI472063B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
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EP2601692A1 (en) | 2013-06-12 |
US8860063B2 (en) | 2014-10-14 |
TW201216521A (en) | 2012-04-16 |
WO2012016874A1 (en) | 2012-02-09 |
CN103098242A (zh) | 2013-05-08 |
TWI472063B (zh) | 2015-02-01 |
US20130187183A1 (en) | 2013-07-25 |
DE102010033137A1 (de) | 2012-02-09 |
CN103098242B (zh) | 2016-04-20 |
KR20130090410A (ko) | 2013-08-13 |
KR101760977B1 (ko) | 2017-07-24 |
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