EP2576857A1 - Dispositif de traitement de pièces au plasma - Google Patents

Dispositif de traitement de pièces au plasma

Info

Publication number
EP2576857A1
EP2576857A1 EP11754610.1A EP11754610A EP2576857A1 EP 2576857 A1 EP2576857 A1 EP 2576857A1 EP 11754610 A EP11754610 A EP 11754610A EP 2576857 A1 EP2576857 A1 EP 2576857A1
Authority
EP
European Patent Office
Prior art keywords
plasma
chamber
process gas
channel
station
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP11754610.1A
Other languages
German (de)
English (en)
Inventor
Sönke SIEBELS
Hartwig Müller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KHS GmbH
Original Assignee
KHS Corpoplast GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KHS Corpoplast GmbH filed Critical KHS Corpoplast GmbH
Publication of EP2576857A1 publication Critical patent/EP2576857A1/fr
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
    • B65D23/00—Details of bottles or jars not otherwise provided for
    • B65D23/02—Linings or internal coatings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32807—Construction (includes replacing parts of the apparatus)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899—Multiple chambers, e.g. cluster tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

Definitions

  • the invention relates to a device for the plasma treatment of workpieces, which has at least one evacuatable plasma chamber for receiving the workpieces and in which the plasma chamber is arranged in the region of a treatment station and in which the plasma chamber is delimited by a chamber bottom, a chamber cover and a lateral chamber wall is and in which the plasma chamber with a device for the controllable supply and / or discharge of process gases.
  • Such methods and devices are used, for example, to provide plastics with surface coatings; in particular, such devices are already known for coating inner or outer surfaces of containers which are used for packaging liquid foods. are provided. In addition, facilities for plasma sterilization are known.
  • PCT WO 95/22413 describes a plasma chamber for interior coating of PET bottles.
  • the bottles to be coated are raised by a movable floor in a plasma chamber and brought in the area of a bottle mouth with an adapter in combination. Through the adapter, an evacuation of the bottle interior can take place.
  • a hollow gas lance is inserted through the adapter into the interior of the bottles to supply process gas. Ignition of the plasma occurs using a microwave.
  • EP-OS 10 10 773 a feeder is described to evacuate a bottle interior and to supply with process gas.
  • PCT-WO 01/31680 a plasma chamber is described in which the bottles are introduced by a movable lid which has been previously connected to a mouth region of the bottles.
  • PCT-WO 00/58631 likewise already shows the arrangement of plasma stations on a rotating wheel and, for such an arrangement, describes a group-wise assignment of vacuum pumps and plasma stations in order to assist a favorable evacuation of the chambers as well as the interior spaces of the bottles.
  • the coating of several containers in a common plasma station or a common cavity is mentioned.
  • Another arrangement for carrying out an inner coating of bottles is described in PCT-WO 99/17334.
  • an arrangement of a microwave generator above the plasma chamber as well as a vacuum and resource supply line through a bottom of the plasma chamber will be described.
  • a gas lance is described, which is retractable into the interior of a preform to be coated and serves for the supply of process gases.
  • the gas lance is positionable in the longitudinal direction of the container.
  • thermoplastic plastic material In the vast number of known devices for improvement of barrier properties of the thermoplastic plastic material through the plasma generated container layers of silicon oxides having the general chemical formula SiO x used. Such barrier layers prevent the penetration of oxygen into the packaged liquids and escape of carbon dioxide in C0 2 -containing liquids.
  • the plasma stations are typically to be connected to vacuum sources with different levels of negative pressures, moreover, it is necessary to supply different process gases for carrying out the plasma treatment.
  • the control of this supply and discharge of process gases is typically carried out using control valves, the output side of which are connected to the plasma chamber and the input side via connecting lines with the associated process gas sources.
  • the corresponding connection with the process gas sources is relatively complicated if the plasma chambers together with the valves are arranged on a rotatable plasma wheel.
  • the valves are first connected via lines with a rotary distributor, which in turn is then connected via further connecting lines with the stationarily arranged process gas sources.
  • connection technique described above leads to a variety of couplings and connecting elements that can be leaking at longer operating times.
  • connection of the plasma chambers with the vacuum sources moreover, relatively large conduit cross sections are required in order to avoid flow losses.
  • the object of the present invention is to construct a device of the aforementioned type such that an effective process gas supply of the plasma chambers is supported.
  • the plasma chamber is disposed on a rotatable plasma wheel, which is supported by a stationary base and that at least one process gas channel is arranged in the region of the base, which is limited at least partially by a cover which is part of the Plasmarades is formed, and in that the cover has at least one connection opening to the process gas channel, which is coupled via a connecting channel and at least one control valve with an interior of the plasma chamber.
  • the arrangement of the process gas duct stationary in the region of the base and the arrangement of the control valve in the region of the rotating with the plasma wheel cover allows an extremely compact design.
  • the process gas channel can become in the immediate vicinity of the plasma chamber and provided with a large cross-section.
  • the supply of the plasma chamber is done with a low flow resistance.
  • the number of components to be interconnected is significantly reduced over the prior art and thereby reduces the risk of leakage.
  • necessary service and maintenance work is minimized.
  • the device according to the invention is particularly suitable for assisting the flow of a coating procedure for plastic bottles.
  • an inner coating of these bottles with a layer of SiOx takes place, it being possible to improve the adhesion of the layer of SiOx on the plastic by means of an intermediate layer, which is formed as an adhesion promoter.
  • the coating process is preferably carried out as a PICVD plasma process (plasma impulse induced chemical vapor deposition).
  • the plasma is ignited using pulses from a microwave.
  • the pulses can be controlled with regard to their pulse width, the pulse spacing and the pulse height.
  • a seal between the cover and the walls of the process gas passage is facilitated by the fact that the process gas channel extends substantially concentric with an axis of rotation of the plasma wheel.
  • a compact construction is supported by the fact that the control valve is arranged in the region of a valve block. Also, the compactness of the arrangement is supported by extending within the valve block at least one channel connecting the control valve to the plasma station.
  • a simultaneous supply of a plurality of cavities is supported by the fact that the channel has at least one channel branch for connection of the control valve with at least two cavities.
  • the supply and discharge of workpieces to be treated is facilitated by the fact that the cavities are arranged in rows along a circumference of the plasma wheel.
  • a chamber wall of the plasma station is arranged positionable in a vertical direction.
  • a long operability of the microwave generators is assisted by the fact that a microwave generator is immovably deten relative to a station frame of the plasma station.
  • a compact design of the plasma bath as well as good accessibility is supported by the fact that the plasma channel is arranged on the plasma wheel inside relative to the plasma station.
  • FIG. 1 A schematic diagram of a plurality of plasma chambers, which are arranged on a rotating plasma wheel and in which the plasma wheel is coupled to input and output wheels, an arrangement similar to FIG. 1, in which the plasma stations are each equipped with two plasma chambers, a perspective view Representation of a plasma bath with a plurality of plasma chambers, a perspective view of a plasma station with a cavity, a front view of the device of FIG. 4 with closed plasma chamber, a cross section along section line VI-VI in Fig. 5, a partial representation of a vertical section through the stationary Base and the processing station to illustrate the assignment of the process gas channels and the control valves,
  • Fig. 8 is a perspective view of a plasma station with four cavities and 9 is a perspective view of a folded up for cleaning purposes plate-like valve holder,
  • FIG. 1 shows a plasma module (1), which is provided with a rotating plasma wheel (2). Along a circumference of the plasma bath (2) a plurality of plasma stations (3) are arranged. The plasma stations (3) are provided with cavities (4) or plasma chambers (17) for receiving workpieces (5) to be treated.
  • the workpieces (5) to be treated become the plasma module
  • the plasma stations (3) are each equipped with two cavities (4) or plasma chambers (17).
  • two workpieces (5) can be treated simultaneously.
  • Fig. 3 shows a perspective view of a plasma module (1) with partially constructed plasma wheel (2).
  • the plasma stations (3) are arranged on a support ring (14), which is formed as part of a rotary joint and mounted in the region of a machine base (15).
  • the plasma stations (3) each have a station frame (16) which holds plasma chambers (17).
  • the plasma chambers (17) have cylindrical chamber walls (18) and microwave generators (19).
  • a rotary distributor (20) is arranged, via which the plasma stations (3) are supplied with resources and energy.
  • ring circuits (21) can be used for distributing the operating medium.
  • the workpieces (5) to be treated are shown below the cylindrical chamber walls (18). Parts of the plasma chambers (17) are not shown for simplicity.
  • Fig. 4 shows a plasma station (3) in a perspective view. It can be seen that the station's frame (16) with guide rods (23) is provided, on which a carriage (24) for holding the cylindrical chamber wall (18) is guided. 4 shows the carriage (24) with chamber wall (18) in a raised state, so that the workpiece (5) is released.
  • the microwave generator (19) is connected via a deflection (25) and an adapter (26) to a coupling channel (27), which opens into the plasma chamber (17).
  • the microwave generator (19) both directly in the region of the Kammerdek- (31) and via a spacer element to the chamber lid (31) coupled with a predetermined distance to the chamber lid (31) and thus in a larger surrounding area of the chamber lid (31) to be ordered.
  • the adapter (26) has the function of a transition element and the coupling channel (27) is formed as a coaxial conductor.
  • a quartz glass window is arranged in the region of an opening of the coupling channel (27) in the chamber lid (31) .
  • the deflection (25) is designed as a waveguide.
  • the workpiece (5) is positioned by a holding element (28), which is arranged in the region of a chamber bottom (29).
  • the chamber bottom (29) is formed as part of a chamber base (30).
  • Another variant is to attach the chamber base (30) directly to the station frame (16). In such an arrangement, it is also possible, for example, to make the guide rods (23) in two parts in the vertical direction.
  • FIG. 5 shows a front view of the plasma station (3) according to FIG. 3 in a closed state of the plasma chamber (17).
  • the carriage (24) with the cylindrical chamber wall (18) is in this case opposite to the positioning in Fig. 4 is lowered, so that the chamber wall (18) against the chamber bottom (29) is driven. In this positioning state, the plasma coating can be performed.
  • the coupling channel (27) opens into a chamber lid (31) having a laterally projecting flange (32).
  • a seal (33) is arranged, which is acted upon by an inner flange (34) of the chamber wall (18), in a lowered state of the chamber wall (18) thereby sealing the chamber wall (18) relative to Chamber lid (31).
  • a further seal (35) is arranged in a lower region of the chamber wall (18), in order to ensure a seal here relative to the chamber bottom (29).
  • the chamber wall (18) surrounds the cavity (4), so that both an interior of the cavity (4) and an interior of the workpiece (5) can be evacuated.
  • a hollow gas lance (36) is arranged in the region of the chamber cup (30) and can be moved into the interior of the workpiece (5).
  • a lance carriage (37) which can be positioned along the guide rods (23).
  • a process gas channel (38) which is coupled in the raised position shown in Fig. 6 with a gas port (39) of the chamber base (30).
  • the workpiece (5) into a plasma chamber (17) immovable relative to the associated support structure. It is also possible, as an alternative to the illustrated coating of the workpieces (5) with their mouths in the vertical direction down to perform a coating of the workpieces with their mouths in the vertical direction upwards. In particular, it is intended to carry out a coating of bottle-shaped workpieces (5).
  • Such bottles are also preferably formed from a thermoplastic material. Preferably, the use of PET or PP is intended. According to a further preferred embodiment, the coated bottles serve to receive drinks.
  • a typical treatment process is explained below using the example of a coating process and carried out such that first the workpiece (5) using the input wheel (11) is transported to the plasma wheel (2) and that in a pushed-up state of the sleeve-like chamber wall (18) the insertion of the workpiece (5) into the plasma station (3).
  • the chamber wall (18) is lowered into its sealed positioning and offset in time follows a displacement of the holding element (28), so that a foreclosure of the interior of the workpiece (5) relative to the interior of the cavity (4).
  • the gas lance (36) is retracted into the interior of the workpiece. It is also possible to move the gas lance (36) into the interior of the workpiece (5) already synchronously with the commencement of the lowering of the cavity (4). It follows a simultaneous or temporary lent evacuated evacuation of the cavity (4) and from the interior of the workpiece (5). After a sufficient evacuation of the interior of the cavity (4), the pressure in the interior of the workpiece (5) is then further lowered. In addition, it is also intended to carry out the positioning movement of the gas lance (36) at least partially already parallel to the positioning of the chamber wall (18).
  • process gas is introduced into the interior of the workpiece (5) and ignited with the aid of the microwave generator (19) the plasma.
  • the plasma is envisaged to deposit both an adhesion promoter on an inner surface of the workpiece (5) and the actual barrier layer of silicon oxides with the aid of the plasma.
  • the plasma chamber (17) and the interior of the workpiece (5) is vented. After reaching the ambient pressure within the cavity (4) and in the interior of the workpiece (5), the chamber wall (18) is raised again and the gas lance (36) again removed from the interior of the workpiece (5). A removal of the coated workpiece (5) and an input of a new workpiece to be coated (5) can now be performed.
  • a positioning of the chamber wall (18), the sealing element (28) and / or the gas lance (36) can be carried out using different drive units.
  • it is intended to support an exact movement ordination with a rotation of the plasma wheel (2) to realize a curve control.
  • the cam control may for example be designed such that along a circumference of the plasma wheel (2) control cams are arranged along which cam rollers are guided. The cam rollers are coupled to the respective components to be positioned.
  • Fig. 7 illustrates the number of a plurality of process gas channels (40) in the region of the machine base (15).
  • the process gas channels (40) each have a bottom (41) and side walls (42) fixedly connected to the machine base (15). Opposite the bottom (41) is a cover (43) arranged as part of the plasma wheel (2). The cover (43) is sealed against the side walls (42) out.
  • connection openings (44) are arranged, which open into the process gas channels (40).
  • the connection openings (44) are each coupled via connection channels (45) with control valves (46).
  • control valves (46) control a connection of the plasma stations (3) with the process gas channels (40) and thus with the associated process gas supplies, in particular, it is intended to arrange the control valves (46) in the region of a valve block (47), in turn with the Chamber socket (30) is connected.
  • channel branches are arranged in the region of the valve block (47) to supply a specific process gas via only one control valve (46) of the plurality to be able to supply to cavities (4) or to realize a connection to a vacuum supply.
  • the process gas channels (40) extend concentrically with a center of the plasma wheel (2).
  • the process gas channels (40) extend concentrically with a center of the plasma wheel (2).
  • Fig. 8 illustrates a plasma station (3) with four cavities (4).
  • the microwave generator (19) typically has a number of microwave modules (48) corresponding to the number of cavities (4). In this way, each of the cavities (4) can be assigned a separate microwave module (48).
  • a positioning of the chamber wall (18) takes place according to a preferred embodiment of the invention mechanically using a cam control.
  • a cam roller (49) connected to the chamber wall (18) is guided in this case.
  • a mechanical cam control is preferably also used.
  • the lance carriage (37) is provided for this purpose with a cam roller (50).
  • Positioning of the gas lances (36), which are not visible in FIG. 8, relative to the lance carriage (37) is preferably carried out using a pneumatic cylinder (51) the combination of the mechanical control and the pneumatic control can decouple the operations of sealing the cavities (4) and the workpieces (5) and the actual retraction of the gas lances (36) into the workpieces (5).
  • FIG. 9 shows a perspective view of the valve block (47). It will be appreciated that a support plate (52) supporting the control valves (46) is pivotally mounted relative to a base member (53). For this purpose, a pivot joint (54) is used.
  • the pivot (54) is preferably disposed on a side of the base member (53) that is inboard in a radial direction of the plasma wheel (2). In the folded-up operating state shown in FIG. 9, undersides of the control valves (56) and valve seats arranged in the region of the base element (53) are easily accessible and can be cleaned.
  • the fixing element (55) may be formed as a screw.
  • An arrangement of the individual process gas channels (40) in a radial direction of the plasma wheel (2) is preferably carried out as a function of the respectively relevant fluidic conductance. This is understood as the quotient of volume flow and pressure. The larger this conductance, the more critical the vacuum technology requirements become. This means that with increasing volume flow or decreasing pressures increased demands are made.
  • the process gas channel (40) is arranged with the relatively highest suppression. Here is the lowest vacuum technical conductance. In the radial direction of the plasma wheel (2) to the outside and thus with smaller distances to the plasma station (3) then follow the process gas supplies with increasing to be considered conductance.

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  • Chemical & Material Sciences (AREA)
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  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
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  • General Chemical & Material Sciences (AREA)
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  • Plasma Technology (AREA)

Abstract

La présente invention concerne un dispositif de traitement de pièces au plasma. La pièce est insérée dans une chambre d'une station de traitement, dans laquelle le vide peu être fait au moins partiellement. La chambre à plasma est délimitée par un fond, un couvercle et une paroi latérale. La chambre à plasma est couplée à un dispositif destiné à amener et/ou à évacuer de manière contrôlée des gaz de traitement. La chambre à plasma est en outre disposée sur une roue à plasma apte à la rotation qui est montée sur une socle fixe. Dans la zone du socle se trouve au moins un canal à gaz de traitement qui est délimité au moins par zones par un élément de recouvrement. L'élément de recouvrement constitue une partie de la roue à plasma et présente au moins une ouverture de liaison vers le canal à gaz de traitement. L'ouverture de liaison peut être couplée à l'espace intérieur de la chambre à plasma par un canal de liaison et au moins une soupape de commande.
EP11754610.1A 2010-06-07 2011-06-03 Dispositif de traitement de pièces au plasma Withdrawn EP2576857A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010023119A DE102010023119A1 (de) 2010-06-07 2010-06-07 Vorrichtung zur Plasmabehandlung von Werkstücken
PCT/DE2011/001158 WO2011153993A1 (fr) 2010-06-07 2011-06-03 Dispositif de traitement de pièces au plasma

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EP2576857A1 true EP2576857A1 (fr) 2013-04-10

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EP11754610.1A Withdrawn EP2576857A1 (fr) 2010-06-07 2011-06-03 Dispositif de traitement de pièces au plasma

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US (1) US20130186336A1 (fr)
EP (1) EP2576857A1 (fr)
JP (1) JP5789659B2 (fr)
DE (1) DE102010023119A1 (fr)
WO (1) WO2011153993A1 (fr)

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WO2017056133A1 (fr) * 2015-10-01 2017-04-06 三菱重工食品包装機械株式会社 Dispositif de formation de film
JP6517656B2 (ja) * 2015-10-09 2019-05-22 キリン株式会社 成膜装置
DE102015121773B4 (de) 2015-12-14 2019-10-24 Khs Gmbh Verfahren und Vorrichtung zur Plasmabehandlung von Behältern
DE102017108992A1 (de) 2017-04-26 2018-10-31 Khs Corpoplast Gmbh Vorrichtung zur Innenbeschichtung von Behältern
DE102017120650A1 (de) 2017-09-07 2019-03-07 Khs Corpoplast Gmbh Vorrichtung zum Beschichten von Behältern mittels eines Beschichtungsverfahrens und Verfahren zum Betrieb einer solchen Vorrichtung
DE102017128550B3 (de) 2017-12-01 2018-11-22 Khs Corpoplast Gmbh Vorrichtung zum Beschichten von Behältern mit mindestens einem Ventilblock
DE102018109217A1 (de) 2018-04-18 2019-10-24 Khs Corpoplast Gmbh Vorrichtung zum Beschichten von Hohlkörpern mit mindestens einer Beschichtungsstation

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Also Published As

Publication number Publication date
JP5789659B2 (ja) 2015-10-07
JP2013534565A (ja) 2013-09-05
US20130186336A1 (en) 2013-07-25
WO2011153993A1 (fr) 2011-12-15
DE102010023119A1 (de) 2011-12-22

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