EP2529601A1 - Source de plasma miniaturisable - Google Patents
Source de plasma miniaturisableInfo
- Publication number
- EP2529601A1 EP2529601A1 EP11704740A EP11704740A EP2529601A1 EP 2529601 A1 EP2529601 A1 EP 2529601A1 EP 11704740 A EP11704740 A EP 11704740A EP 11704740 A EP11704740 A EP 11704740A EP 2529601 A1 EP2529601 A1 EP 2529601A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- coil
- hollow body
- active element
- plasma source
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H2240/00—Testing
- H05H2240/10—Testing at atmospheric pressure
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H2245/00—Applications of plasma devices
- H05H2245/60—Portable devices
Definitions
- the invention relates to a miniaturizable plasma source and its use.
- Plasma i. At least partially ionized gas may be used in a variety of engineering applications, such as surface coating, surface activation, sterilization, etching, and the like.
- conventional plasma sources are expensive, large, operate at low gas pressures, and have high power consumption. There is therefore a need for a low cost miniaturizable plasma source that operates at atmospheric pressure and low power consumption.
- the invention therefore introduces a plasma source having an oscillator having an active element and a resonator connected to the active element.
- the resonator has a hollow body, a gas inlet, a gas outlet arranged at a distal end of the hollow body about a longitudinal axis of the hollow body and a coil arranged along the longitudinal axis of the hollow body with an effective length of one quarter of a wavelength at a resonant frequency of the resonator.
- a distal end of the coil is disposed relative to the gas outlet so that a plasma path can form between the distal end of the coil acting as a first plasma electrode and the gas outlet of the hollow body functioning as a second plasma electrode.
- the coil is guided out of the interior of the hollow body at a proximal end of the hollow body by an electrically contact-free passage, wherein "electrically non-contact” means that there is no conductive connection between the coil and the hollow body in the region of the leadthrough
- the coil is located at a first contact region located between the proximal end of the coil and the leadthrough with a first gate of the active element and at a second contact region located between the proximal end of the coil and the leadthrough coupled to the second gate of the active element.
- the first contact region and the second contact region are spatially not identical.
- the first port may be an output of the active element acting as an amplifier and the second port an input of the active element.
- the plasma source of the invention can be miniaturized and thus embodied as a portable device.
- the plasma acts as a load after ignition and determines the resonance characteristics of the resonator and the entire resonant circuit.
- the coupling out of the resonator via the second contact region to the second gate of the active element is high, so that the arrangement corresponds to the circuit topology of a feedback amplifier and resonates reliably.
- the oscillation of the feedback amplifier generates a field strength in the resonator, which is needed for the ignition of the plasma. Accordingly, the plasma is ignited upon reaching a power dependent on the circumstances such as the type of gas, etc.
- the plasma source of the invention offers the additional advantage that a simple mechanical construction of the resonator becomes possible.
- the coil is out of contact electrically out of the hollow body to the outside, it can outside the hollow body by simple means such.
- Micro strip lines are realized, which are inexpensive to produce.
- the resonator needs except the coil in the interior of the hollow body to have no further elements.
- the first contact region may be coupled to the first gate of the active element via a first capacitor.
- the first capacitor not only blocks any DC voltage that may be present for the operating point setting of the active element, but also contributes to the resonance, which simplifies the oscillation of the oscillator. It is therefore in this preferred embodiment to a coupled multi-circuit resonant circuit.
- the coil may be inductively coupled at the second contact region with the second gate of the active element.
- This embodiment variant has the advantage that the signal feedback to the second port of the active element is automatically terminated when the plasma ignites, since then the entire active power coupled into the resonator by the active element is used for the excitation of the plasma and the current in the coil becomes zero or at least approximately zero in the second contact region, so that no more required for the inductive coupling magnetic field is generated.
- the plasma source may have a feedback line, which is arranged and formed in the second contact region along the coil and spaced therefrom Inductively couple the coil to the second gate of the active element.
- the coil is preferably not wound in the part located outside of the hollow body, that is to say it is designed as a simple conductor, so that the coil and the feedback line can easily be guided along one another.
- the feedback line preferably contacts the hollow body on the outside thereof.
- the feedback line may be coupled to the second port of the active element via a second capacitor.
- the coil between the passage and the proximal end of the coil is designed as a micro-strip line.
- the feedback line can be designed as a micro-strip line.
- the first port of the active element is connected to a first matching network and the second port of the active element is connected to a second matching network.
- the first matching network may include a first variable capacitor and the second matching network a second variable capacitor. This variant has the advantage that an adjustment of the adjustment during operation can be made.
- the plasma source may have a first DC supply connected to the first port of the active element and a second DC supply connected to the second port of the active element.
- the active element preferably has a GaN transistor or is a GaN transistor.
- GaN transistors can provide the power required to operate a plasma source, even at high frequencies in the gigahertz range.
- the second gate of the active element may be the gate of the GaN transistor.
- the GaN transistor is preferably connected in source circuit.
- the first gate of the active element may be the drain of the GaN transistor.
- the hollow body of the resonator may be cylindrical. This results in a waveguide structure around the coil, which is preferably designed along the axis of the resonator, which has particularly good resonance properties.
- the plasma source may have a gas supply connected to the gas inlet, which is designed to pump a plasma gas through the gas inlet into the hollow body of the resonator.
- a gas supply connected to the gas inlet, which is designed to pump a plasma gas through the gas inlet into the hollow body of the resonator.
- a continuous flow of plasma from the gas outlet of the resonator is effected, which can be used for a variety of applications.
- the plasma source is operated, for example, with a nitrogen-oxygen mixture such as air, nitrogen oxide and ozone are formed in the plasma, whereby the ratio between nitrogen oxide and ozone can be influenced by the ratio of nitrogen to oxygen. It is also possible to produce only either ozone or nitric oxide. Ozone can be used to kill germs, and nitric oxide improves wound healing.
- the oscillator of the invention preferably functions as a reflection oscillator when the plasma is ignited.
- the active element may be operated in different modes, e.g. Class A, AB, B or C operation.
- a second aspect of the invention relates to the use of a plasma source according to the first aspect of the invention for the activation, cleaning, sterilization and coating of surfaces, for etching and for the purification of water and exhaust gases.
- FIG. 1 is a block diagram of a plasma source according to the invention.
- FIG. 2 shows two different operating states of the plasma source according to the invention in two sub-images
- FIG. 3 is a circuit diagram of a preferred embodiment of the plasma source according to the invention.
- Fig. 1 shows a block diagram of a plasma source according to the invention.
- the plasma source according to the invention has an oscillator structure.
- An output of an active component 1, which provides the electrical amplification required for stable oscillation, is connected to a resonator 2 via a first matching network 5.
- the resonator 2 has the task to generate the necessary ZündfeldCh and set the frequency of the oscillation.
- the resonator 2 in turn is in turn connected via a second matching network 4 to an input of the active component 1, so that a feedback arises.
- the resonator 2 simultaneously forms the plasma chamber of the plasma source, an embodiment is preferred in which a gas for the generation of the plasma is passed through the resonator 2, which is ignited so continuously by the oscillation of the oscillator at a sufficiently high E field.
- the ignited plasma 3 influences the electrical properties of the resonator 2 and acts on the output and input of the resonator 2 back, so it is shown as part of the equivalent circuit of the plasma source.
- FIG. 2 shows two different operating states of the plasma source according to the invention in two sub-images.
- FIG. 2A shows the state of the plasma source before ignition of the gas and in FIG. 2B with ignited gas.
- the oscillator In idle mode, ie in the state without ignited gas, the oscillator has the circuit topology of a feedback amplifier with heavily mismatched load. That is, the impedance to the resonator 2 towards has a large reactive component and the transmitted between the first matching network 5 and the resonator 2 complex power P- ⁇ is also very blind, ie, their Imaginäranteil is large. Of the few registered active power Re (Pi), a large proportion is placed in the well-adapted second matching network 4, P 2 therefore has a relatively large real part. The difference Re (P 2 ) - Re (Pi) is converted by the losses of the resonator 2 into heat, but also generates the necessary field strength in the resonator 2 to ignite the plasma 3. With the plasma ignition (FIG.
- the impedance Z with a large imaginary part changes into a predominantly real resistance.
- the transmitted power P- ⁇ is now real and thus represents an active power.
- the power P 2 is very blind and a pronounced active power transport from the resonator to the input of the active device 1 is now missing.
- the oscillator thus operates in the operating state with ignited plasma as a kind of reflection oscillator, wherein the reflecting load is represented by the output of the resonator 2 and the input of the active component 1 offers the required negative impedance.
- the input of the resonator 2 is well adapted.
- 3 shows a circuit diagram of a preferred embodiment of the plasma source according to the invention.
- the DC voltages at the input and output of the active component 1 can be specified by voltage sources 14 and 15 via Abkoppelwiderand 12 and 13 and thus the operating point of the active component 1 can be set.
- capacitors 10 and 11 with adjustable capacitance are preferably connected between input and output of the active component 1 and ground, which function as matching networks.
- Input and output of the active component 1 are connected in the illustrated embodiment via a respective coupling capacitor 8 and 9 with the resonator, which is designed in the preferred embodiment shown as a cylindrical hollow body 6, wherein at opposite end faces a gas inlet and a gas outlet for the Passage of the plasma gas are provided.
- the first and / or second capacitor are also conceivable.
- the cylindrical hollow body 6 also has a coupling which is realized by a feedback line connected to the coupling capacitor 9 and guided at least partially along the part of the coil 7 lying outside the hollow body 6.
- a gas-impermeable insulator may be arranged between the coil 7 and the hollow body 6, or else the bushing 16 may be used as gas inlet.
- the coil 7 is outside of the hollow body 6 preferably designed as an easy-to-implement micro-strip line and contacts the hollow body 6. Such an arrangement can be produced more cost-effectively and more robust than previously known resonator arrangements.
- a first contact region 18 which is arranged between the leadthrough 16 and the end of the coil 7 which is conductively connected to the hollow body 6, the coil 7 is coupled via a first capacitor to the first gate of the active element.
- the first contact region 18 is located outside the hollow body 6 and in relative proximity to the end of the coil, which, however, represents a ground point and therefore can not simultaneously serve to couple in the signal of the active element. For this reason, the first contact area 18 is spaced from the end of the coil connected to the hollow body 6. Also, between the passage 16 and connected to the hollow body 6 end of the coil, there is a second contact area 17. In the example shown, the second contact area is located between the feedthrough 16 and the first contact region 18.
- the second contact region 17 serves to produce a feedback to the active element, which ensures the oscillation of the oscillator and the ignition of the plasma.
- This feedback is preferably implemented inductively by a likewise connected to the hollow body 6 feedback line 19, which may be inexpensively designed as a micro-strip line, is guided along a portion of the coil 7, which is arranged outside of the hollow body 6.
- the feedback line 19 is thus inductively coupled to the coil 7 and redirects the received from the coil 7 oscillation to the active element.
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PL11704740T PL2529601T3 (pl) | 2010-01-29 | 2011-01-28 | Dające się zminiaturyzować źródło plazmy |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102010001395A DE102010001395B4 (de) | 2010-01-29 | 2010-01-29 | Miniaturisierbare Plasmaquelle |
PCT/EP2011/051234 WO2011092298A1 (fr) | 2010-01-29 | 2011-01-28 | Source de plasma miniaturisable |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2529601A1 true EP2529601A1 (fr) | 2012-12-05 |
EP2529601B1 EP2529601B1 (fr) | 2015-03-11 |
Family
ID=44148923
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP11704740.7A Not-in-force EP2529601B1 (fr) | 2010-01-29 | 2011-01-28 | Source de plasma miniaturisable |
Country Status (5)
Country | Link |
---|---|
US (1) | US8796934B2 (fr) |
EP (1) | EP2529601B1 (fr) |
DE (1) | DE102010001395B4 (fr) |
PL (1) | PL2529601T3 (fr) |
WO (1) | WO2011092298A1 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102010001395B4 (de) | 2010-01-29 | 2013-11-14 | Forschungsverbund Berlin E.V. | Miniaturisierbare Plasmaquelle |
DE102020100872B4 (de) | 2020-01-15 | 2021-08-05 | Ferdinand-Braun-Institut gGmbH, Leibniz- Institut für Höchstfrequenztechnik | Resonator und Leistungsoszillator zum Aufbau einer integrierten Plasmaquelle sowie deren Verwendung |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3495125A (en) * | 1968-03-05 | 1970-02-10 | Atomic Energy Commission | Quarter-wave transmission line radio frequency voltage step-up transformer |
BE758571A (fr) * | 1969-11-06 | 1971-04-16 | Euratom | Generateur de plasma a haute frequence |
US4797597A (en) * | 1986-12-22 | 1989-01-10 | Bostrom Norman A | Microwave ion source |
US4918031A (en) * | 1988-12-28 | 1990-04-17 | American Telephone And Telegraph Company,At&T Bell Laboratories | Processes depending on plasma generation using a helical resonator |
DE4337119C2 (de) * | 1993-10-29 | 1996-10-24 | Forsch Applikationslabor Plasm | VHF-Plasmaquelle |
US6329757B1 (en) * | 1996-12-31 | 2001-12-11 | The Perkin-Elmer Corporation | High frequency transistor oscillator system |
US6262638B1 (en) * | 1998-09-28 | 2001-07-17 | Axcelis Technologies, Inc. | Tunable and matchable resonator coil assembly for ion implanter linear accelerator |
JP4144095B2 (ja) * | 1999-02-04 | 2008-09-03 | ソニー株式会社 | 粒状体に対するプラズマ処理方法およびプラズマ処理装置 |
CN1241316C (zh) * | 1999-07-13 | 2006-02-08 | 东京电子株式会社 | 产生感性耦合的等离子的射频电源 |
US6304036B1 (en) * | 2000-08-08 | 2001-10-16 | Archimedes Technology Group, Inc. | System and method for initiating plasma production |
US7867457B2 (en) * | 2003-06-20 | 2011-01-11 | Drexel University | Plasma reactor for the production of hydrogen-rich gas |
US7547911B2 (en) * | 2004-08-27 | 2009-06-16 | National Institute Of Information And Communications Technology, Incorporated Administrative Agency | Gan-based field effect transistor and production method therefor |
US7742167B2 (en) * | 2005-06-17 | 2010-06-22 | Perkinelmer Health Sciences, Inc. | Optical emission device with boost device |
US7459899B2 (en) * | 2005-11-21 | 2008-12-02 | Thermo Fisher Scientific Inc. | Inductively-coupled RF power source |
US20080078745A1 (en) * | 2006-09-29 | 2008-04-03 | Zyvex Corporation | RF Coil Plasma Generation |
US8128788B2 (en) * | 2008-09-19 | 2012-03-06 | Rf Thummim Technologies, Inc. | Method and apparatus for treating a process volume with multiple electromagnetic generators |
DE102010001395B4 (de) | 2010-01-29 | 2013-11-14 | Forschungsverbund Berlin E.V. | Miniaturisierbare Plasmaquelle |
-
2010
- 2010-01-29 DE DE102010001395A patent/DE102010001395B4/de not_active Expired - Fee Related
-
2011
- 2011-01-28 US US13/575,981 patent/US8796934B2/en not_active Expired - Fee Related
- 2011-01-28 WO PCT/EP2011/051234 patent/WO2011092298A1/fr active Application Filing
- 2011-01-28 PL PL11704740T patent/PL2529601T3/pl unknown
- 2011-01-28 EP EP11704740.7A patent/EP2529601B1/fr not_active Not-in-force
Non-Patent Citations (1)
Title |
---|
See references of WO2011092298A1 * |
Also Published As
Publication number | Publication date |
---|---|
EP2529601B1 (fr) | 2015-03-11 |
DE102010001395B4 (de) | 2013-11-14 |
PL2529601T3 (pl) | 2015-08-31 |
DE102010001395A1 (de) | 2011-08-04 |
WO2011092298A1 (fr) | 2011-08-04 |
US20120313524A1 (en) | 2012-12-13 |
US8796934B2 (en) | 2014-08-05 |
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