Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F77/00—Constructional details of devices covered by this subclass
  • H10F77/70—Surface textures, e.g. pyramid structures
  • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P50/00—Etching of wafers, substrates or parts of devices
  • H10P50/60—Wet etching
  • H10P50/64—Wet etching of semiconductor materials
  • H10P50/642—Chemical etching
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F10/00—Individual photovoltaic cells, e.g. solar cells
  • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
  • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F71/00—Manufacture or treatment of devices covered by this subclass
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F71/00—Manufacture or treatment of devices covered by this subclass
  • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
  • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F77/00—Constructional details of devices covered by this subclass
  • H10F77/10—Semiconductor bodies
  • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
  • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F77/00—Constructional details of devices covered by this subclass
  • H10F77/10—Semiconductor bodies
  • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
  • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
  • H10F77/164—Polycrystalline semiconductors
  • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
  • H10F77/1645—Polycrystalline semiconductors including only Group IV materials including microcrystalline silicon
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy
  • Y02E10/545—Microcrystalline silicon PV cells
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy
  • Y02E10/548—Amorphous silicon PV cells
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
  • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
  • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

• the invention relates to a method for producing at least one photovoltaic cell comprising the following successive steps:
• a photovoltaic cell is formed of a multilayer stack for directly converting the received photons into an electrical signal.
• Such a photovoltaic cell may, for example, be a heterojunction photovoltaic cell.
• the heterojunction is, in particular, formed by a crystalline silicon substrate having a given type of doping (n or p) and an amorphous silicon layer having a type opposite to that of the substrate.
• an intermediate layer called "passivation" is most often disposed between the two elements forming the heterojunction, in order to improve the interface characteristics of the heterojunction and therefore the efficiency of the conversion.
• this intermediate layer is, in general, an intrinsic amorphous silicon layer.
• the heterojunction photovoltaic cell comprises a substrate of crystalline silicon 1, for example doped n-type and comprising a front face 1a, covered uniformly and successively by:
• an electrode 4 for example made of indium tin oxide (ITO)
• a current collector 5 for example in the form of a comb.
• the front face 1a of the substrate 1 is, in addition, textured (or structured), in order to increase the optical confinement of the cell.
• the rear face 1b of the substrate 1 is, in FIG. 1, flat and covered with an electrode 6. It may, however, in other cases, be textured and covered with a multilayer stack as shown in FIG. Thus, in this embodiment, the rear face 1b of the substrate 1 is covered uniformly and successively by:
• an amorphous silicon layer 8 very strongly doped, for example, n-type,
• a current collector 10 in the form of a comb.
• the photovoltaic cells such as the heterojunction photovoltaic cells as illustrated in FIGS. 1 and 2, need to deposit, in a uniform manner, a plurality of very thin layers (of the order of a few nanometers to a few tens of nanometers). on a substrate of which at least one side is textured.
• uniform deposition also called compliant deposition by some
• a thin layer is understood to mean the deposition of a thin layer of a substantially constant thickness, in order to follow the relief of the face on which the thin layer is deposited.
• the texturing step of the substrate of at least one face does not facilitate the proper conformation (or uniform distribution) of these layers.
• the texturing is advantageously carried out by at least one anisotropic etching step with the aid of an alkaline solution, such as potassium hydroxide (KOH) or sodium hydroxide (NaOH). It has also been proposed to add an active interface agent, such as isopropyl alcohol (IPA) to the alkaline solution, in order to limit the roughness phenomenon.
• KOH potassium hydroxide
• NaOH sodium hydroxide
• IPA isopropyl alcohol
• the substrate 1 is textured by performing a cleaning of the surface and then immersing the cleaned substrate in an alkaline solution, such as NaOH which is optionally added alcohol isopropyl (IPA) to carry out the anisotropic etching.
• an alkaline solution such as NaOH which is optionally added alcohol isopropyl (IPA) to carry out the anisotropic etching.
• patent application US2001 / 0029978 also proposes to follow the anisotropic etching step by a step intended to round off the zones arranged between two pyramids (zones "b" in FIG. 1). formed during the anisotropic etching step.
• the substrate undergoes a series of cleaning steps, before being subjected to an isotropic etching step, by immersion in an aqueous solution containing hydrofluoric acid (HF) and nitric acid (HN0 3 ), in a 1:20 ratio, for about 30 seconds. Subsequently, the substrate undergoes cleaning steps (deionized water also denoted water D1, then HF + water, then water D1).
• HF hydrofluoric acid
• HN0 3 nitric acid
• the isotropic etching step with the mixture of HF and HNO 3 makes it possible, in known manner, to form a silicon oxide by virtue of the oxidizing action of the nitric acid and to etch off said oxide of silicon through the attacking action of hydrofluoric acid.
• the aqueous mixture may also contain CH 3 COOH.
• the wet isotropic etching proposed in the patent application US2001 / 0029978 is, however, too important (of the order of 2 ⁇ or more). It does not therefore make it possible to obtain a smoothing of the flanks of the pyramids at the nanometric level, nor even to round the peaks of the pyramids.
• the production of photovoltaic cells comprises a surface texturing step to form patterns in the form of pyramids, for example.
• the method described in the patent application WO-A-2009/1206331 may also include a post-cleaning step performed by an oxidation operation of the surface, followed by an etching operation.
• the oxidation operation is carried out chemically, by immersion in a liquid solution such as a deionized water bath comprising between 1 ppm and 30 ppm of ozone, with possibly 1% by volume of HCl. This chemical oxidation operation then generates a very fine oxide, inhomogeneous in thickness on the surface textured to treat.
• etching removal of such an oxide is sufficient to achieve a surface cleaning, but remains insufficient to obtain a smoothing texturing, whose purpose is to round or soften the corners of the texture. Therefore, in the patent application WO-A-2009/12631, a specific smoothing step is, in particular, carried out before this post-cleaning step, when it is desired to round or soften the angles of the texturing performed. .
• This optional step of smoothing is, as in US2001 / 0029978, carried out wet, with the disadvantages described above.
• the object of the invention is to propose, for a method for producing at least one photovoltaic cell, an isotropic etching treatment that makes it possible to improve the surface condition of the crystalline silicon substrate once said etched surface has been anisotropically etched, compared to the isotropic etching treatments proposed according to the prior art.
• the object of the invention is to obtain, for a surface of a textured substrate in the form of pyramids, a rounding of the vertices and zones arranged between two pyramids as well as a smoothing of the flanks of said pyramids.
• this object is achieved by a method of producing at least one photovoltaic cell comprising the following successive steps:
• the isotropic etching treatment of said surface comprises two successive operations, respectively constituted by a thermally activated dry oxidation forming, at said surface of the substrate, a silicon oxide thin film having a thickness of between 2 nm and 500 nm and by removing said thin film of silicon oxide.
• the two successive operations constitute a repeated operational cycle at least once during the isotropic etching treatment.
• FIG. 1 and 2 respectively show, schematically and in section, first and second embodiments of a photovoltaic cell according to the prior art.
• FIGS. 3 to 9 illustrate various steps of a particular method of producing at least one photovoltaic cell according to the invention.
• FIGS. 10 to 15 illustrate alternative embodiments according to the invention.
• the various steps of a particular embodiment of at least one photovoltaic cell such as a heterojunction photovoltaic cell, are illustrated in FIGS. 3 to 9.
• the front face 1 has a substantially planar surface of a crystalline silicon substrate 1 , for example doped n-type, undergoes, first, an anisotropic etching operation.
• the anisotropic etching of the front face 1a of the substrate 1 makes it possible to structure (or texturize) the front face 1a in the form of pyramids.
• the surface 1a of the substrate 1 is structured as shown in FIGS. 3 and 4, the rear face 1b may be covered with a protective mask (for example made of SiO 2 or Si 3 N), resistant to etching anisotropic carried out with the aqueous solution containing KOH in order to preserve said back face 1b.
• a protective mask for example made of SiO 2 or Si 3 N
• the flanks "f" of the pyramids obtained form, in general, an angle of 54.7 ° with the plane "P" of the main face 1a , that is to say the plane of the face 1 before it is textured.
• the widths of the pyramids are between 0.1 and ⁇ ⁇ 40 ⁇ and advantageously between 1 ⁇ 30 ⁇ and depending on the concentration of the aqueous solution and the etching time.
• the surface state of said face 1a after the anisotropic etching operation and, in particular, the flanks "f" of the pyramids are rough (schematized by the dotted lines in Figure 5) and the vertices "s" of the pyramids, just as the zones "b” arranged between two pyramids, are steep (with, in particular, a radius of curvature less than 30nm) .
• an isotropic etching treatment comprising at least two successive operations respectively consisting in forming a silicon oxide thin film of a controlled thickness and in removing said thin film thus formed, preferably in a homogeneous manner.
• the thickness of the silicon oxide thin film is, in addition, between 2 nm and 500 nm and is preferably homogeneous on at least the flanks "f" of the pyramids and advantageously over the entire surface treated.
• the formation of a thin film of silicon oxide on the face 1a of the substrate 1 is carried out by a thermally activated dry oxidation process, that is to say by oxidizing the face of the substrate by means of a non-liquid oxidizing agent while maintaining said face at a temperature above ambient temperature.
• the oxidizing agent may, in particular, be in gaseous form or be contained in a plasma. It may, for example, be oxygen, ozone, water, alone or in mixture.
• the thermal activation of the oxidation by the dry route consists in supplying energy to the face of the substrate, by applying a thermal budget defined by at least a temperature higher than the ambient temperature and advantageously greater than or equal to 40 ° C.
• such a thermal budget is advantageously adapted to make it possible to obtain a compromise between a rapid rise in temperature and sufficiently high to generate the silicon oxide thin film and to obtain a final temperature not too high for avoid an alteration of the surface or volume properties of the silicon substrate.
• the treatment also eliminates much of the particulate contamination, which is particularly critical on textured silicon substrates.
• the isotropic etching treatment can be carried out in different ways.
• the thermally activated dry oxidation process can be a thermal oxidation, that is to say an oxidation by means of at least one oxidizing agent in gaseous form or contained in a plasma and by application to the substrate face with a temperature above room temperature and preferably greater than or equal to 40 ° C.
• the applied temperature is less than 1100 ° C.
• a rapid process of treatment also known under the name of "Rapid Thermal Process” or the acronym "RTP”
• the dry oxidation operation is preferably carried out with a very rapid temperature rise (for example between 100 ° C./s and 200 ° C./s).
• the final temperature obtained at the end of this rise in temperature is preferably moderate in order to avoid damage to the treated surface state and the volume properties of the substrate.
• the thermally activated dry oxidation process can also be assisted or it can be obtained by application of radiation ultraviolet wavelength located in a range of 0,15 ⁇ 0,4 ⁇ ⁇ ⁇ and preferably about 254nm and about 185nm.
• a plasma treatment activated for example by radiofrequency, microwave or microwave.
• the plasma may, for example, be a plasma, such as an inductive plasma or an ionic reactive etching plasma (RIE).
• the oxidizing agent may be a gas or a mixture of gases that may contain oxygen, ozone, water vapor or it may be another gaseous oxidizing species, alone or in combination, in a form molecular, ionic, radical or atomic.
• the total pressure during the oxidation operation can be of any type: it can be atmospheric, sub-atmospheric or superatmospheric. It is also possible to vary the partial pressure or pressures of each species constituting the oxidizing agent as a function of the total pressure. In particular, the partial pressure (s) of each species may be adjusted according to the desired oxidation rate.
• the oxidation operation may be a thermal oxidation carried out with a temperature of the order of 400 ° C., with a gas mixture of oxygen and ozone (in particular from 3 to 4% of O 3 with respect to O 2).
• a gas mixture of oxygen and ozone in particular from 3 to 4% of O 3 with respect to O 2.
• Such an operation makes it possible to obtain a thin film of silicon oxide having a thickness sufficient to improve the surface state, once said film has been removed.
• a thickness greater than 10 nm which can be obtained for example with a temperature of 450 ° C. for 3 hours, will be chosen. Larger thicknesses can be obtained by increasing the temperature and / or the treatment time. For example, 25 nm of silicon oxide can be obtained with a temperature of 550 ° C for 4 hours.
• the oxide thickness of silicon is multiplied by four compared to a film obtained by oxidation with only oxygen at the same temperature.
• the oxidation operation may be a thermal oxidation carried out between 700 ° C. and 800 ° C., assisted by UV radiation in a gaseous mixture of oxygen and ozone (approximately 2 ppm of O 3 relative to at O2).
• a thermal oxidation carried out between 700 ° C. and 800 ° C., assisted by UV radiation in a gaseous mixture of oxygen and ozone (approximately 2 ppm of O 3 relative to at O2).
• a gaseous mixture of oxygen and ozone approximately 2 ppm of O 3 relative to at O2.
• the thickness of silicon oxide is increased from 50% to 100% with respect to a film obtained by oxidation with only oxygen.
• the thickness of silicon oxide generated will advantageously be chosen to be greater than 10 nm. For example, with oxidation at 800 ° C. for 140 minutes, a silicon oxide film with a thickness of about 25 nm is obtained.
• the oxidation operation may be an oxidation obtained by microwave activated plasma treatment (2,45GHz) and assisted by DC-magnetron polarization (100V) and with a partial oxygen pressure. about 100mT.
• the oxide thin film formed has a thickness of about 400 nm for an oxidation time of one hour, on a surface of a silicon wafer whose surface temperature is maintained at about 600. ° C.
• the removal operation of the thin film of silicon oxide, directly following the oxidation operation, may be carried out by the dry route, for example by reactive ion etching (RIE) or by wet process, for example by immersing the side 1a of the substrate 1 in a liquid solution containing hydrochloric acid (HCl) and optionally hydrofluoric acid (HF) (BHF).
• RIE reactive ion etching
• BHF hydrofluoric acid
• the removal operation can also be carried out by treatment in a reducing medium, for example by carrying out a thermal treatment under hydrogen.
• These exemplary shrinkage steps are known to be homogeneous shrinkage steps, i.e. shrinkage with a constant shrinkage speed on the underside of the surface, despite texturing.
• the two successive operations constitute an operational cycle that can be repeated at least once.
• Such a repetition may in particular be advantageous when the silicon oxide thin film formed has a thickness of the order of 2 nm.
• the repetition of the two successive operations of oxidation and removal of the silicon oxide thin film makes it possible to optimize the process and in particular to obtain a saving of time.
• the overall thickness (or cumulated) of silicon oxide formed during the isotropic etching treatment is advantageously greater than 10 nm and, preferably, greater than 20 nm.
• the overall thickness of silicon oxide is the sum of the thicknesses of the thin films of silicon oxide successively formed during the treatment, which corresponds, more specifically, to the thickness of a film. of silicon oxide formed by all the different successive oxidation operations in the event that they are not interspersed by withdrawal operations.
• the thickness of the silicon oxide thin film formed during the single heat-activated dry oxidation process of the treatment is also advantageously greater than at 10 nm and preferably above 20 nm.
• the overall thickness of silicon oxide formed during the isotropic etching treatment will be discussed.
• the isotropic etching treatment of the face 1a of the substrate 1 is, for example, illustrated in FIGS. 6 to 8.
• the arrows F in FIG. 6 represent the thermally activated dry oxidation operation forming the thin film 11 in silicon oxide, on the face 1a of the substrate 1 and for rounding the vertices "s" pyramids and recessed areas "b" disposed between the pyramids.
• the silicon oxide thin film 11 is removed (FIG. 7).
• the enlargement A 'shown in FIG. 8 illustrates such a rounding for the vertices "s" of the pyramids and the hollow zones "b” disposed between the pyramids as well as the smoothing of the flanks "f" (solid lines in FIG. 8). ), once the thin film 11 removed.
• the isotropic etching operation may be followed by the formation, on said surface, of a multilayer stack comprising successively:
• a thin amorphous intrinsic silicon layer 2 constituting, in FIG. 9, a passivation layer
• the front face 1a of the crystalline silicon substrate 1 can undergo, after the isotropic etching treatment and before the formation of the multilayer stack, at least one cleaning step and one drying step.
• the surface 1a of the substrate 1 can be treated with a mixture of hydrofluoric acid and hydrochloric acid (HF / HCl), with a low HF content, in order to avoid new contamination. from the surface.
• the cleaning treatment can also be carried out with hydrofluoric acid (HF) vapors, followed by rinsing with a mixture of deaerated water without free oxygen and HCl to avoid any pollution of the surface by oxygen. . This pollution would lead to the premature formation of a native oxide, harmful for the achievement of good surface passivation.
• a drying operation can follow, to avoid any contaminating deposit on the pyramids. It is, for example, carried out with isopropyl alcohol (IPA) vaporized or in a low surface tension liquid or by immersion in a liquid solution such as deaerated water followed by immersion in a solution of water. IPA preferably heated.
• IPA isopropyl alcohol
• the formation of the multilayer stack for example by plasma-enhanced chemical vapor deposition (PECVD) can then be carried out up to half an hour after drying, without reducing the yield of the photovoltaic cells obtained.
• PECVD plasma-enhanced chemical vapor deposition
• the rear face 1b of the substrate 1 may advantageously be covered by at least one thin layer. It may, for example, be covered by an electrode 6 such as that represented in FIG. 1 or by a multilayer stack such as that represented in FIG. 2.
• the invention is not limited to the embodiments described above, in particular with regard to the doping type of substrate 1 and amorphous silicon layers 3 and 8. Therefore, the invention is not limited to embodiments comprising a doped crystalline silicon substrate. n and amorphous silicon layers 3 and 8, respectively doped p and n.
• the amorphous silicon layer 3 has a doping type contrary to that of the substrate 1, in order to form the heterojunction of the photovoltaic cell and the amorphous silicon layer 8 disposed on the side of the rear face 1b of the substrate 1 has, in particular, a type of doping identical to that of the substrate 1.
• the thin layers 3 and 8 may also be microcrystalline silicon.
• the embodiments described above illustrate anisotropic etching and isotropic etching treatment of the front face 1a of the substrate 1.
• these etchings could be envisaged not on the front face 1a of the substrate 1, but on its rear face 1b or even, in addition to the front face 1a of the substrate 1, on the rear face 1b of the substrate 1.
• the thin amorphous or microcrystalline silicon layer 8 of the multilayer stack disposed on the rear face 1b has a doping type identical to that of the crystalline silicon substrate 1.
• a step of depositing a layer of a material of a nature and / or a crystalline structure and / or a morphology different to that of the substrate 1 can be achieved between the anisotropic etching step and the isotropic etching treatment.
• a layer may be formed by amorphous silicon or polycrystalline silicon or by silicon oxide or by a high permittivity oxide (High K) such as Hf0 2 or Al 2 0 3 or Zr0 2 . It may, for example, be deposited by a chemical vapor deposition (CVD) technique at a suitable temperature (for example of the order of 100 ° C to 800 ° C).
• CVD chemical vapor deposition
• a layer 12a formed by amorphous or polycrystalline silicon is placed on the front face 1a of the substrate 1 between the anisotropic etching step and the isotropic etching treatment.
• the thermally activated dry oxidation operation makes it possible to oxidize the silicon of the layer 12a at the same time as the face of the substrate 1a on which said layer 12 is disposed, in order to form a thin film in silicon oxide 11.
• a layer 12b formed by silicon oxide is disposed on the front face 1a of the substrate 1, once said textured face.
• the thermally activated dry oxidation operation makes it possible to oxidize, through the layer 12b, the front face of the substrate 1, in order to form a thin film between the substrate 1 and the layer 12b. silicon oxide 11.
• the layer 12a or 12b is removed during the removal operation of the thin film 11 of silicon oxide.
• this layer 12a or 12b must be sufficiently thick, for example of the order of one hundred nanometers. It is intended to promote the improvement of the surface state of the treated surface by isotropic etching. In particular, it forms during the deposition of this layer, a rounding at the top "s" of the pyramids and in the zones "b" between the pyramids.
• it is possible to differentiate the oxidation of the "f" flanks from the oxidation of the "b” zones and the "s" vertices with respect to the "f" flanks of the pyramids, which improves the smoothing of the "f” flanks. and the rounding of zones "b” and vertices "s”.
• a substrate initially having a crystallographic axis ⁇ 100> oriented perpendicularly to its surface is textured to present, on the surface, pyramids having "s" vertices and "b" troughs between the pyramids each having a curvature typically having a mean radius of 30 nm. It can be a substrate.
• a silicon layer 12a with a thickness of the order of 100 nm is deposited by LPCVD on said surface, in a temperature range of 500 to 620 ° C. The silicon thus deposited is then amorphous or polycrystalline. In addition, depending on the need, this layer 12a can be doped.
• the vertices "s" and the hollows "b” formed by the layer 12a are rounded.
• This borough allows to obtain a radius of curvature of the order of 200nm radius of curvature in line with the troughs of the pyramids.
• This layer is then thermally oxidized to consume its full thickness for example by oxidation at 950 ° C under steam (mode "steam").
• the presence of the rounded surface of the silicon layer 12a then induces a rounding on the surface of the initial silicon substrate, at the vertices and troughs of the pyramids with a radius of curvature of order of 200 to 300 nm in line with the hollows between the pyramids. After removal of the oxide, this rounded shape is retained.
• the passivation layer formed by the intrinsic amorphous silicon thin film 2 in FIG. 9 may be at least formed by a thin film of crystalline silicon oxide placed directly on the surface of the substrate previously treated by etching. isotropic.
• a thin layer of silicon crystalline oxide is advantageously obtained by radical surface oxidation of the surface of the substrate (1), for example by means of oxygen radicals obtained from oxygen and / or ozone and / or from water, and it is not removed. It advantageously has a thickness less than or equal to 2 nm and can be covered with amorphous silicon oxide.
• the oxidation of a surface portion of the substrate 1 can be made from oxygen and ultraviolet radiation having a wavelength range between 160nm and 400nm.
• the wavelengths of ultraviolet radiation used are, for example, about 185 nm and about 254 nm.
• the oxygen under the action of ultraviolet radiation, dissociates into free radicals O " and ozone and said free radicals oxidize the surface of the silicon and form at least the thin layer of silicon crystalline oxide .
• the passivation layer may be formed by the crystalline silicon oxide thin film and by the intrinsic amorphous silicon thin film, the latter being placed between the silicon crystalline oxide thin film and the amorphous or microcrystalline silicon thin layer.
• the embodiments described above relate to a heterojunction photovoltaic cell.
• the isotropic etching treatment exposed in these various embodiments can be applied to a surface of a crystalline silicon substrate having previously undergone an anisotropic etching step to produce all types of photovoltaic cells and more particularly to produce photovoltaic cells. homojunction.

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