Classifications

• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
  • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
  • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
  • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
  • C23C18/1208—Oxides, e.g. ceramics
  • C23C18/1216—Metal oxides
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
  • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
  • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
  • C23C18/1229—Composition of the substrate
  • C23C18/1245—Inorganic substrates other than metallic
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02367—Substrates
  • H01L21/0237—Materials
  • H01L21/02373—Group 14 semiconducting materials
  • H01L21/02381—Silicon, silicon germanium, germanium
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02436—Intermediate layers between substrates and deposited layers
  • H01L21/02439—Materials
  • H01L21/02488—Insulating materials
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02518—Deposited layers
  • H01L21/02521—Materials
  • H01L21/02551—Group 12/16 materials
  • H01L21/02554—Oxides
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02518—Deposited layers
  • H01L21/02521—Materials
  • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02612—Formation types
  • H01L21/02617—Deposition types
  • H01L21/02623—Liquid deposition
  • H01L21/02628—Liquid deposition using solutions
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/66007—Multistep manufacturing processes
  • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
  • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
  • H01L29/66409—Unipolar field-effect transistors
  • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
  • H01L29/66742—Thin film unipolar transistors
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/66007—Multistep manufacturing processes
  • H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
  • H01L29/76—Unipolar devices, e.g. field effect transistors
  • H01L29/772—Field effect transistors
  • H01L29/78—Field effect transistors with field effect produced by an insulated gate
  • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
  • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
  • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
  • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
  • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
  • H01L27/1259—Multistep manufacturing methods
  • H01L27/1292—Multistep manufacturing methods using liquid deposition, e.g. printing

Definitions

• the present invention relates to a process for producing a layer comprising at least one semiconducting metal oxide on a substrate comprising at least the steps of (A) preparing a solution containing at least one precursor compound of the at least one metal oxide selected from the group consisting of carboxylates of mono-, di- or polycarboxylic acids having at least three carbon atoms or derivatives of mono-, di- or polycarboxylic acids, alcoholates, hydroxides, semicarbazides, carbamates, hydroxamates, isocyanates, amidines, amidrazones, urea derivatives, hydroxylamines, oximes, urethanes, ammonia, amines, phosphines , Ammonium compounds, azides, inorganic complexes of the corresponding metal and mixtures thereof, in at least one solvent, (B) applying the solution from step (A) to the substrate and (C) thermally treating the substrate from step (B) at a Temperature of 20 to 200 0 C, the at least
• printed electronic components can be obtained by using a printable ink containing an organometallic zinc complex as a precursor compound for the semiconductive zinc oxide. At least one oximate ligand is present in the organometallic zinc complex used. Furthermore, this zinc complex is free of alkali or alkaline earth metals.
• An organometallic zinc complex which has a ligand selected from 2- (methoxyimino) alkanoate, 2- (ethoxyimino) alkanoate or 2- (hydroxyimino) alkanoate is preferably used in the process according to WO 2009/010142.
• nanoscale zinc oxide layers are deposited using a precursor solution. brought as precursor compound organic zinc complexes with (2-methoxyimino) pyruvate ligands are used.
• EP 1 993 122 A2 discloses a process for producing a semiconductive zinc oxide film as a thin film transistor using a precursor solution which can be processed at low temperatures.
• the precursor solution contains a zinc salt and a complexing reagent.
• Suitable zinc salts are zinc nitrate, zinc chloride, zinc sulfate or zinc acetate.
• complexing reagents carboxylic acids or organic amines are used.
• the object of the present invention is therefore to provide a process for the production of semiconducting layers on substrates, which is distinguished by a particularly simple process control.
• the coated substrates obtained according to the invention should have the highest possible purity of semiconducting material, in particular zinc oxide. This is to be achieved according to the invention by using zinc oxide precursor compounds which are converted into the desired zinc oxide by thermal decomposition, but without resulting in any interfering by-products which remain in the layer formed.
• the semiconducting layers obtained by the method according to the invention should furthermore be distinguished by improved electronic properties.
• step (B) applying the solution of step (A) to the substrate
• step (C) thermally treating the substrate of step (B) at a temperature of 20 to 200 ° C to convert the at least one precursor compound into at least one semiconductive metal oxide
• step (A) electrically neutral [(OH) x (NH 3 ) y Zn] z with x, y and z is used independently of one another as precursor compound, this being carried out by reaction of zinc oxide and / or zinc hydroxide is obtained with ammonia.
• the method according to the invention serves to produce a layer containing at least one semiconductive metal oxide on a substrate.
• the present invention also relates to the process according to the invention, wherein the at least one semiconductive metal oxide is zinc oxide ZnO.
• the process according to the invention makes it possible to coat all substrates known to the person skilled in the art, for example Si wafers, glass, ceramics, metals, metal oxides, semimetal oxides, plastics, such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonates, polyacrylates, Polystyrenes, polysulfones etc.
• substrates known to the person skilled in the art, for example Si wafers, glass, ceramics, metals, metal oxides, semimetal oxides, plastics, such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonates, polyacrylates, Polystyrenes, polysulfones etc.
• the substrate is mechanically flexible and comprises at least one plastic, for example selected from the group consisting of polyesters, for example polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonates, polysulfones and mixtures thereof.
• the layer produced on the substrate by the method according to the invention containing at least one semiconductive metal oxide generally has a thickness of 5 to 250 nm, preferably 5 to 100 nm.
• Step (A) of the process according to the invention comprises (A) preparing a solution comprising at least one precursor compound of the at least one metal oxide selected from the group consisting of carboxylates of mono-, di- or polycarboxylic acids having at least three carbon atoms or derivatives of mono-, di- or polycarboxylic acids, alcoholates, hydroxides, semicarbazides, carbamates, hydroxamates, isocyanates, amidines, amidrazones, urea derivatives, hydroxylamines, oximes, urethanes, ammonia, amines, phosphines, ammonium compounds, azides, the corresponding metal and mixtures thereof, in at least a solvent.
• step (A) of the process according to the invention a solution of the corresponding precursor compound is prepared.
• the solvent generally any solvent can be used in which the precursor compounds used are at least 0.01% by weight, based on the total solution, soluble.
• Suitable solvents are, for example, selected from the group consisting of water, alcohol, for example methanol, ethanol, isopropanol, n-propanol, n-butanol, isobutanol, tert-butanol, ketones, for example acetone, ethers, for example diethyl ether, methyl tert-butyl ether, tetrahydrofuran, dioxane, dimethoxyethane, esters and mixtures thereof.
• alcohol for example methanol, ethanol, isopropanol, n-propanol, n-butanol, isobutanol, tert-butanol, ketones, for example acetone, ethers, for example diethyl ether, methyl tert-butyl ether, tetrahydrofuran, dioxane, dimethoxyethane, esters and mixtures thereof.
• a solution which comprises the at least one precursor compound of the at least one semiconductive metal oxide in a concentration of 0.01 to 20% by weight, preferably 0.1 to 10% by weight, particularly preferred 0.5 to 5 wt .-%, each based on the total solution contains.
• step (A) of the process according to the invention at least one precursor compound of the at least one semiconductive metal oxide is dissolved in the corresponding solvent.
• the at least one precursor compound of the at least one metal oxide is selected from the group consisting of carboxylates of Mono-, di- or polycarboxylic acids having at least three carbon atoms or derivatives of mono-, di- or polycarboxylic acids, alcoholates, hydroxides, semicarbazides, carbamates, hydroxamates, isocyanates, amidines, amidazones, urea derivatives, hydroxylamines, oximes, urethanes, ammonia, amines, Phosphines, ammonium compounds, azides of the corresponding metal and mixtures thereof.
• precursor compounds are used which are at a temperature of generally below 200 0 C, preferably below 150 0 C, more preferably below 130 0 C, most preferably below 100 0 C, in the semiconductive metal oxide and volatile products, For example, decompose carbon dioxide, ethyl acetate, etc.
• a minimum temperature for the decomposition of these precursor compounds is, for example, 50 ° C., with catalytic activation for example 20 ° C.
• Suitable carboxylates of the corresponding metal are, for example, compounds of the corresponding metal with mono-, di- or polycarboxylic acids having at least three carbon atoms or derivatives of mono-, di- or polycarboxylic acids.
• Derivatives of mono-, di- or polycarboxylic acids are understood according to the invention to mean the corresponding mono-, di- or polyesters or anhydrides or amides.
• the metal atom present as the central atom in the carboxylate complexes can generally have the coordination numbers 3 to 6.
• step (A) zinc carboxylates.
• zinc carboxylate complexes having the coordination numbers 3 to 6 are used according to the invention, where at least one ligand on zinc originates from the group of mono-, di- or polycarboxylic acids having at least three carbon atoms or derivatives of mono-, di- or polycarboxylic acids ,
• zinc carboxylates or derivatives thereof are used as precursor compounds, which are at a temperature of generally below 200 0 C, preferably below 150 0 C, more preferably below 130 0 C, most preferably below 100 0 C. , in zinc oxide and volatile products, such as carbon dioxide, acetone, etc. decompose.
• a minimum temperature for the decomposition of these precursor compounds is, for example, 50 ° C., with catalytic activation for example 20 ° C.
• Particularly preferred carboxylates used as precursor compounds in step (A) of the process according to the invention correspond to the general formula (I) R 1 -MOC (O) -R 2 (I),
• R 1 is hydrogen, linear or branched C 1 -C 2 -alkyl, linear or branched C 1 -C -heteroalkyl, substituted or unsubstituted C 5 -C 6 -aryl, linear or branched, substituted or unsubstituted C 5 -C 6 -aralkyl, linear or branched, substituted or unsubstituted C 5 -C 6 -alkaryl, NR 6 R 7 with R 6 , R 7 are independently of each other si- (C 1 -C 6 -alkyl) 3 or radical of the formula -O-C (O) -R 2 with the below given meanings for R 2 , in each case optionally substituted by functional groups having an electron donor character, for example hydroxy, amino, alkylamino, amido, ether and / or oxo,
• R 2 is linear or branched CrCl 2 -alkyl, preferably C 2 -C 2 alkyl, linear or branched d-Ci2 heteroalkyl, preferably C2-Ci2 heteroalkyl, substituted or unsubstituted C 5 -C 6 aryl, linear or branched, substituted or unsubstituted C 5 -C 6 -alkyl, linear or branched, substituted or unsubstituted C 5 -C 6 -alkaryl, each optionally substituted by functional
• Groups of electron-donating character for example hydroxy, amino, alkylamino, amido, ether and / or oxo; or radicals of the formula O
• R 3 is selected from O and CH 2 , n, m, c independently of one another are 0, 1, 2 or 3, preferably 0, 1, 2 and particularly preferably 0 or 1,
• R 5 is selected from H, OH, OCH 3 , OC 2 H 5 , OSi (X 1 ) (3 - a -b) (X 2 ) a (X 3 ) b, CO 2 X 5 , OCO 2 X 5 from CO 2 X 5 ,
• X 5 is selected from C 1 to C 4 alkyl, preferably from methyl, ethyl or tert-butyl, very particularly preferably from ethyl or tert-butyl,
• a, b are independently 0, 1, 2 or 3 and the sum of a and b is 3 or less
• X 1 , X 2 , X 3 , X 4 are independently selected from H, Ci to C 10 alkyl, preferably H and Ci to C 4 alkyl, more preferably H, methyl and ethyl d is an integer value of 1 to 100 .
• X 6 is selected from H, Ci to Ci 0 alkyl, preferably from H and Ci to C 4
• Alkyl more preferably selected from methyl or ethyl,
• present ligands are selected from the group consisting of 3-Oxoglutar Textre- monoalkyl esters, for example, 3-Oxoglutarticakladremonomethylester, 3-OxoglutarTalkre- monoethyl ester, Malonklaremonoalkylester, for example Malonklamonomethy- lester, Malonklamonoethylester, and mixtures thereof.
• a preferred example of a zinc carboxylate which is used as precursor compound in step (A) of the process according to the invention is the compound of the formula (II) Zn [(EtOC (O) CH 2 C (O) CH 2 COO) 2 ] ,
• solvent molecules for. As water, etc., are present in the compounds.
• a further particularly preferred example of a zinc carboxylate which is used as precursor compound in step (A) of the process according to the invention and which is present as an adduct of two molecules of the general formula (I) is the compound of the formula (III)
• the compound of the formula (III) can likewise be prepared by processes known to the person skilled in the art, for example by reacting an equimolar amount of 3- Oxoglutaric acid monoethyl ester and zinc bis [bis (trimethylsilyl) amide] in benzene or toluene at room temperature.
• the compound of the formula (IV) can likewise be prepared by processes known to the person skilled in the art.
• a zinc carboxylate is the compound of formula (IVa) ZnKNH 2 CH 2 COO) 2 (H 2 O)], having electron donating functionality
• R 7 R 8 is methyl or R 7 is H and R 8 is C (O) Me
• a precursor compound of the at least one metal oxide is an alcoholate of the corresponding metal.
• metal alcoholates as precursor compounds in which the metal atom has the coordination number 3 to 6.
• zinc oxide used as the semiconducting metal oxide
• zinc alkoxide complexes having coordination numbers 3 to 6 are used in which at least one ligand is an alcoholate.
• These coordination numbers present according to the invention are realized in the precursor compounds used according to the invention by additions of identical or different molecules to one another.
• zinc alcoholates are used as precursor compounds, which at a temperature of generally below 200 0 C, preferably below 150 0 C, more preferably below 130 0 C, most preferably below 100 0 C, in the semiconducting Metal oxide and volatile products decompose.
• a minimum temperature for the decomposition of these precursor compounds is, for example, 50 ° C., with catalytic activation for example 20 ° C.
• the metal alcoholates used as precursor compounds in step (A) of the process according to the invention correspond to the following general formula (V)
• M Zn R 9 is linear or branched CrCl 2 alkyl, linear or branched C 1 -C 12 - heteroalkyl, substituted or unsubstituted C 5 -Ci6 aryl, linear or branched, substituted or unsubstituted C 5 -C 6 aralkyl, linear or branched, substituted or unsubstituted C 5 -C 6 -alkaryl, preferably linear or branched C 1 -C 6 -alkyl, in particular methyl or ethyl, each optionally substituted by functional groups with electron-donating character, for example hydroxy, amino, alkylamino, amido, ether and / or oxo
• R 10 is hydrogen, linear or branched d-Ci 2 -alkyl, linear or branched d-Ci2 heteroalkyl, substituted or unsubstituted C 5 -C 6 aryl, linear or branched, substituted or unsubstituted C 5 -Ci6 aralkyl, linear or branched, substituted or unsubstituted C 5 -C 6 -alkaryl, NR 11 R 12 with R 11 , R 12 independently of one another are si- (C 1 -C 6 -alkyl) 3 , or radical of the formula -O-C (O) -R 2 with the meanings given above for R 2 , in each case optionally substituted by functional groups having electron donor character, for example hydroxyl, amino, alkylamino, amido, ether and / or oxo, particularly preferably R 9 is linear or branched C 1 C 6 alkyl, in particular methyl or ethyl.
• Particularly preferred compounds of the general formula (V) are methoxymethyl-zinc or ethoxy-ethyl-zinc.
• zinc alkoxides which are used as precursor compound in step (A) of the process according to the invention are the compounds of the formulas (Va), (Vb) and (Vc)
• At least one precursor compound of the at least one metal oxide are hydroxides, semicarbazides, carbamates, hydroxamates, isocyanates, amidines, amidrazone, urea derivatives, hydroxylamines, oximes, urethanes, ammonia, amines, amides, phosphines, ammonium Compounds, azides of the corresponding metal and mixtures thereof, more preferably a hydroxo complex of the corresponding metal used.
• Hydroxo-metal complexes or else aquo-complexes are preferably used as precursor compounds in which the metal atom has the coordination number 4 to 6.
• zinc oxide is used as the semiconducting metal oxide, in particular zinc complexes having coordination numbers 4 to 6 are used.
• hydroxo metal complexes are used as precursor compounds, which at a temperature of generally below 200 0 C, preferably below 150 0 C, more preferably below 130 0 C, most preferably below 100 0 C, in decompose the semiconductive metal oxide and volatile products such as ammonia.
• a minimum temperature for the decomposition of these precursors for example, 50 0 C, under of catalytic activation, for example 20 0 C.
• these compounds correspond to the general formula (VI).
• the present invention particularly also relates to the process according to the invention, wherein in step (A) as at least one precursor compound of the at least one metal oxide [(OH) x (NH 3 ) y Zn] z with x, y and z is independently 0.01 to 10, so that the said complex is charged electrically neutral, and this by Reaction of zinc oxide or zinc hydroxide with ammonia is used.
• Step (A) of the process according to the invention is generally carried out at a temperature at which a suitable solution containing at least one precursor compound of the at least one metal oxide is obtained, for example 5 to 120 ° C., preferably 10 to 60 ° C.
• Step (A) of the process according to the invention can be carried out in all reactors known to the person skilled in the art, for example stirred reactors. Step (A) can be carried out according to the invention continuously or batchwise.
• step (A) of the process according to the invention a solution is obtained which contains at least one precursor compound of the at least one metal oxide in a solvent.
• the solution obtained in step (A) may contain further additives, for example for improving the selected deposition process on the substrate (step B).
• the solution prepared in step (A) of the process according to the invention may furthermore also contain further metal cations which serve for doping the semiconductive metal oxide.
• these metal cations are selected from the group consisting of Al 3+ , In 3+ , Sn 4+ , Ga 3+ and mixtures thereof. These metal cations can be introduced separately into the solution, or already present in the precursor compounds according to the invention.
• the said doping metal cations can be added to produce the solution in step (A) in the form of metal oxides, metal hydroxides, metal alcoholates or in the form of soluble complexes.
• the dopants mentioned may be added to the solution in step (A) of the process according to the invention generally in an amount of from 0.02 to 10 mol%, based on Zn, preferably from 0.1 to 5 mol%, based on Zn.
• the present invention therefore also relates to the process according to the invention wherein the semiconductive metal oxide is doped with metal cations selected from the group consisting of Al 3+ , In 3+ , Sn 4+ , Ga 3+ and mixtures thereof.
• Step (B) of the method of the invention comprises applying the solution of step (A) to the substrate.
• step (B) can be carried out according to all methods known to those skilled in the art, which are suitable for applying the solution obtained from step (A) to the substrate, for example spin-coating, spray-coating, dip-coating, drop-casting or printing, such as.
• spin-coating for example, spin-coating, spray-coating, dip-coating, drop-casting or printing, such as.
• ink-jet printing flexo printing or gravure printing.
• the present invention relates to the process according to the invention, wherein the application of the solution from step (A) in step (B) by spin coating, spray coating, dip coating, drop casting and / or printing he follows.
• step (A) in step (B) of the process according to the invention is particularly preferably applied by spin-coating or ink-jet printing. These methods are known per se to the person skilled in the art.
• the present invention therefore also relates to the process according to the invention wherein the application of the solution from step (A) in step (B) is effected by spin-coating.
• Step (C) of the process of the invention comprises subjecting the substrate of step (B) to thermal treatment at a temperature of from 20 to 200 ° C to convert the at least one precursor compound into the at least one semiconductive metal oxide.
• step (C) can be carried out in all devices known to those skilled in the art for heating substrates, for example a hot plate, an oven, a drying oven, a heat gun, a belt calciner or a climate cabinet.
• step (C) of the process according to the invention is carried out at a relatively low temperature of, for example, 20 to 50 ° C.
• the decomposition to the at least one semiconductive metal oxide is preferably effected by catalytic activation, for example by flowing with a reactive gas or by irradiation. Even at higher temperatures, catalytic activation can occur but is not preferred.
• step (C) the at least one precursor compound of the semiconductive metal oxide, which has been applied to the substrate with the solution of step (A) in step (B), is converted into the corresponding metal oxide, in particular zinc oxide.
• the metal oxide precursor compounds used can be converted into the corresponding metal oxide even at a temperature below 200 ° C., preferably below 150 ° C., particularly preferably below 130 ° C., in particular below 100 ° C., so that For example, plastic substrates can be used which do not deform during the production of the semiconductive metal oxide or are thermally degraded.
• Another advantage is that due to the precursor compounds used during thermal treatment in step (C) of the process according to the invention only volatile by-products are formed, which thus escape in gaseous form, and do not remain as interfering impurities in the layer formed.
• the precursor compounds used according to the invention are generally converted in step (C) into the corresponding metal oxide, in particular zinc oxide, and volatile compounds, or mixtures thereof.
• no by-products of the precursor compounds for example counterions, such as halide anions, nitrate anions, cations such as Na + , K + , or neutral ligands, remain behind in the metal oxide layer formed.
• a further advantage of the precursor compounds used in accordance with the invention is that they can generally be converted into the corresponding metal oxide in step (C) of the process according to the invention without the addition of further additives since they already contain the oxygen necessary for conversion into the corresponding oxides Have ligand sphere. Since no further additives have to be added, no by-products of these additives remain in the layer formed.
• steps (A), (B) and (C) of the manufacturing process under ambient conditions (atmospheric oxygen, etc.) can be performed.
• Another object of the present invention is a method for producing a semiconductor device, for.
• a thin-film transistor TFT comprising at least steps (A), (B) and (C) as described above.
• the precursor compounds according to the invention or the metal oxides obtainable therefrom are used as the semiconductor layer of a TFT.
• the solution of the precursor compound (preparation as described in step (A)) can be processed as described in (B) and (C) to the semiconductor component of the TFT.
• Dielectrics can be any of a variety of organic, inorganic or organic-inorganic hybrid materials.
• Gate, source and drain contact materials are conductive materials, e.g. B. Al, Au, Ag, Ti / Au, Cr / Au, ITO, Si, PEDOT / PSS, etc.
• Suitable substrates are in particular polymeric and flexible materials with low decomposition temperature, and others temperature-labile substrates, without being limited thereto.
• Substrate, gate, source and drain contact materials as well as dielectrics are not subject to any primary limitations and may be selected according to chemical / physical compatibility, processing process and desired application.
• the present invention also relates to a substrate which is coated with at least one semiconducting metal oxide, obtainable by the process according to the invention.
• a substrate which is coated with at least one semiconducting metal oxide, obtainable by the process according to the invention.
• the details and preferred embodiments relating to the substrates, the metal oxides, the precursor compound, etc. are already mentioned above.
• the substrates coated according to the invention have outstanding properties with regard to their electronic properties.
• a TFT produced by the process according to the invention preferably a ZnO TFT, has mobilities of 10 -4 to 100 cm 2 / V * s, preferably 10 -2 to 50 cm 2 / V * s, particularly preferably 0.1 to 10 cm 2 ⁇ / * s, for example 0.5 cm 2 ⁇ / * s, and / or an on / off ratio of 100 to 10 9 , preferably 10 3 to 10 8 , particularly preferably 10 5 to 10 8 , for example 10 7 , at a threshold voltage of 0 to 50 V, preferably 0 to 25 V, for example 19 V.
• the present invention therefore also relates to the use of a substrate according to the invention in electronic components, for example TFTs, in particular their applications in CMOS circuits and other electronic circuits, RFID tags, displays, etc. Therefore, the present invention relates to the use of the substrate according to the invention in electronic components, wherein the electronic component is a TFT, RFID tag or a display.
• the present invention also relates to a process for the preparation of electrically neutral [(OH) x (NH 3 ) y Zn] z with x, y and z independently 0.01 to 10, preferably integers from 1 to 6, by Reaction of zinc oxide and / or zinc hydroxide with ammonia.
• the electrically neutral [(OH) x (NH 3 ) y Zn] z produced by the process according to the invention with x, y and z independently of one another 0.01 to 10 is characterized in that there are no impurities, eg. B.
• solid zinc oxide or zinc hydroxide or mixtures thereof are preferably initially charged in a suitable reactor.
• This solid zinc oxide and / or zinc hydroxide is then preferably treated with a solution of ammonia (NH 3 ) in a suitable solvent.
• the solvent is preferably an aqueous solvent, for example an alcoholic, aqueous solution or water, more preferably water.
• Ammonia is present in this preferably aqueous solution in a concentration of 1 to 18 mol / l, preferably 2 to 15 mol / l, particularly preferably 3 to 12 mol / l, in each case based on the total solution.
• the amount of ammonia solution added to the solid zinc oxide is sufficient to obtain a reaction mixture in which zinc oxide is generally used at a concentration of 0.01 to 2 mol / L, preferably 0.1 to 1 mol / L, particularly preferably 0, 1 to 0.5 mol / L, is present.
• the reaction mixture thus obtained is then stirred at a temperature of generally 10 to 120 ° C., preferably 10 to 60 ° C., particularly preferably 20 to 30 ° C.
• the suspension is stirred until a complete conversion is obtained, for example 2 to 72 hours, preferably 2 to 24 hours.
• the resulting solution may optionally be purified, for example by filtration.
• the desired product is thus obtained in a particularly high purity in, preferably aqueous, solution.
• the process is characterized in that the desired compound is obtained in a particularly high purity in only one step, without purification of the product, from particularly favorable reactants. Therefore, the thus obtained becomes electrically neutral [(OH) x (NH 3 ) y Zn] z with x, y and z independently 0.01 to 10, particularly preferably in the inventive method for producing a layer containing at least one semiconductive metal oxide on a substrate used.
• a purified Si dot i ert substrate having SiO 2 -Dielektrikumstik (200 nm) is flooded with the aqueous solution of Example 1, and these spin-coated at 3000 revolutions / min for 30 s (gespincoated). Subsequently, the sample is heated at 150 ° C. for 20 minutes. Source / drain contacts (channel width / length ratio: 20) are produced by thermal vapor deposition of aluminum. Representative output curves (AK) and transfer curves (TK) of a corresponding transistor are shown in FIGS. 1 and 2. In this case VD applies: voltage between source and drain, VG: voltage between source and gate, ID: current between source and drain.

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• 2010
  • 2010-04-26 EP EP10715825A patent/EP2425038A2/de not_active Withdrawn
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