SG11201802577PA - Process for the generation of thin inorganic films - Google Patents
Process for the generation of thin inorganic filmsInfo
- Publication number
- SG11201802577PA SG11201802577PA SG11201802577PA SG11201802577PA SG11201802577PA SG 11201802577P A SG11201802577P A SG 11201802577PA SG 11201802577P A SG11201802577P A SG 11201802577PA SG 11201802577P A SG11201802577P A SG 11201802577PA SG 11201802577P A SG11201802577P A SG 11201802577PA
- Authority
- SG
- Singapore
- Prior art keywords
- international
- ludwigshafen
- basf
- pct
- compound
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 5
- 150000001875 compounds Chemical class 0.000 abstract 3
- 239000000443 aerosol Substances 0.000 abstract 2
- 239000003795 chemical substances by application Substances 0.000 abstract 2
- 239000003446 ligand Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 125000000217 alkyl group Chemical group 0.000 abstract 1
- 125000003118 aryl group Chemical group 0.000 abstract 1
- 238000000231 atomic layer deposition Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 229940096118 ella Drugs 0.000 abstract 1
- 230000008520 organization Effects 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 125000004665 trialkylsilyl group Chemical group 0.000 abstract 1
- OOLLAFOLCSJHRE-ZHAKMVSLSA-N ulipristal acetate Chemical compound C1=CC(N(C)C)=CC=C1[C@@H]1C2=C3CCC(=O)C=C3CC[C@H]2[C@H](CC[C@]2(OC(C)=O)C(C)=O)[C@]2(C)C1 OOLLAFOLCSJHRE-ZHAKMVSLSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/06—Cobalt compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Inorganic Insulating Materials (AREA)
- Glass Compositions (AREA)
- Formation Of Insulating Films (AREA)
Abstract
INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property -' Organization International Bureau rest0) (43) International Publication Date ..... ..sr ,„,„.1 1 June 2017 (01.06.2017) WIPO I PCT (10) WO International 111111111111311111111111111111111111111111111111111111111111111111111311111111111111111 2017/089230 Publication Number Al (51) International Patent Classification: (74) Agent: BASF IP ASSOCIATION; C23C 16/18 (2006.01) C07F 15/06 (2006.01) 67056 Ludwigshafen (DE). CO7F 13/00 (2006.01) C23C 16/455 (2006.01) CO7F 15/04 (2006.01) (81) Designated States (unless kind of national protection (21) International Application Number: AO, AT, AU, AZ, BA, BB, PCT/EP2016/078099 BZ, CA, CH, CL, CN, CO, DO, DZ, EC, EE, EG, ES, (22) International Filing Date: HN, HR, HU, ID, IL, IN, 18 November 2016 (18.11.2016) KW, KZ, LA, LC, LK, LR, (25) Filing Language: English MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, (26) Publication Language: English SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, (30) Priority Data: TN, TR, TT, TZ, UA, UG, 15196031.7 24 November 2015 (24.11.2015) EP ZW. (71) Applicant: BASF SE [DE/DE]; Carl-Bosch-Str. 38, 67056 (84) Designated States (unless Ludwigshafen am Rhein (DE). kind of regional protection GM, KE, LR, LS, MW, (72) Inventors: ADERMANN, Torben; Endemannstrasse 13, TZ, UG, ZM, ZW), Eurasian 69115 Heidelberg (DE). LOEFFLER, Daniel; Heinrich TJ, TM), European (AL, Heine Str. 2b, 67134 Birkenheide (DE). LIMBURG, Car- DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, olin; Zypressenstrasse 3a, 68199 Mannheim (DE). LV, MC, MK, MT, NL, NO, Basf Se, ZRX - C6, otherwise indicated, for every available): AE, AG, AL, AM, BG, BH, BN, BR, BW, BY, CR, CU, CZ, DE, DJ, DK, DM, FI, GB, GD, GE, GH, GM, GT, IR, IS, JP, KE, KG, KN, KP, KR, LS, LU, LY, MA, MD, ME, PT, QA, RO, RS, RU, RW, SA, US, UZ, VC, VN, ZA, ZM, otherwise indicated, for every available): ARIPO (BW, GH, MZ, NA, RW, SD, SL, ST, SZ, (AM, AZ, BY, KG, KZ, RU, AT, BE, BG, CH, CY, CZ, DE, PL, PT, RO, RS, SE, SI, SK, ABELS, Falko; Gutenbergstrasse 2a, 67354 Roemerberg SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, Hagen; Ernst-Kunz-Strasse 33, 67071 (DE). WILMER, GW, KM, ML, MR, NE, SN, TD, TG). Ludwigshafen GILL, Monica; 20 Waterview (DE). Published: Heeights, Apt. 12, Charlottetown, Prince Edward Island CIA 9J7 (CA). GRIFFITHS, Matthew; 10 Kluane Ridge, — with international search report (Art 21(3)) K2M 1Z6 BARRY, 38 Ella Ottawa, ON, (CA). Sean; St., Ottawa, ON, K1S 2S4 (CA). Title: PROCESS FOR THE GENERATION OF THIN INORGANIC FILMS (54) 1 R i ,-, .4t ----M L= R 2 --- - i Al i \ o M ei ct\ ce o t - - (57) : The present L m invention is the field of processes in Xn (I) for the generation of thin n 3 rx --, N inorganic %4 R films on substrates, in particular 1-1 o atomic layer deposition processes. The present invention relates to a process comprising bringing a compound of general foiinula (I) el into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid 0 substrate, wherein R I , R, R 2 3 , and R 4 are independent of each other an alkyl group, an aryl group or a trialkylsilyl group, M is Mn, Ni or Co, X is a ligand which coordinates M, wherein at least one X is a neutrally charged ligand, m is 1, 2 or 3 and n is at least 1 P. wherein the molecular weight of the compound of general fonnula (I) is up to 1000 g/mol.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP15196031 | 2015-11-24 | ||
| PCT/EP2016/078099 WO2017089230A1 (en) | 2015-11-24 | 2016-11-18 | Process for the generation of thin inorganic films |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201802577PA true SG11201802577PA (en) | 2018-06-28 |
Family
ID=54780071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201802577PA SG11201802577PA (en) | 2015-11-24 | 2016-11-18 | Process for the generation of thin inorganic films |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US10801105B2 (en) |
| EP (1) | EP3380644B1 (en) |
| JP (1) | JP2018538442A (en) |
| KR (1) | KR20180085728A (en) |
| CN (1) | CN108368606B (en) |
| IL (1) | IL259068B (en) |
| SG (1) | SG11201802577PA (en) |
| TW (1) | TWI721043B (en) |
| WO (1) | WO2017089230A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI742022B (en) * | 2015-11-30 | 2021-10-11 | 德商巴斯夫歐洲公司 | Process for the generation of metallic films |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6273951B1 (en) * | 1999-06-16 | 2001-08-14 | Micron Technology, Inc. | Precursor mixtures for use in preparing layers on substrates |
| US7396949B2 (en) * | 2003-08-19 | 2008-07-08 | Denk Michael K | Class of volatile compounds for the deposition of thin films of metals and metal compounds |
| JP4975414B2 (en) * | 2005-11-16 | 2012-07-11 | エーエスエム インターナショナル エヌ．ヴェー． | Method for film deposition by CVD or ALD |
| US20080248648A1 (en) * | 2007-04-06 | 2008-10-09 | Thompson David M | Deposition precursors for semiconductor applications |
| US20090226612A1 (en) | 2007-10-29 | 2009-09-10 | Satoko Ogawa | Alkaline earth metal containing precursor solutions |
| KR20100071463A (en) * | 2008-12-19 | 2010-06-29 | 주식회사 유피케미칼 | Organometallic precursors for deposition of metal or metal oxide thin films, and deposition process of the thin films |
| WO2010125011A2 (en) * | 2009-04-28 | 2010-11-04 | Basf Se | Method for producing semiconductive layers |
| US9018387B2 (en) * | 2010-06-11 | 2015-04-28 | Air Products And Chemicals, Inc. | Complexes of imidazole ligands |
| EP2707375A4 (en) * | 2011-05-13 | 2015-01-07 | Greenct Canada | Group 11 mono-metallic precursor compounds and use thereof in metal deposition |
| TW201533261A (en) * | 2014-01-27 | 2015-09-01 | Basf Se | Process for the generation of thin inorganic films |
-
2016
- 2016-11-18 SG SG11201802577PA patent/SG11201802577PA/en unknown
- 2016-11-18 JP JP2018526852A patent/JP2018538442A/en active Pending
- 2016-11-18 CN CN201680068490.6A patent/CN108368606B/en active Active
- 2016-11-18 KR KR1020187014580A patent/KR20180085728A/en not_active Application Discontinuation
- 2016-11-18 EP EP16798703.1A patent/EP3380644B1/en active Active
- 2016-11-18 WO PCT/EP2016/078099 patent/WO2017089230A1/en active Application Filing
- 2016-11-18 US US15/775,856 patent/US10801105B2/en active Active
- 2016-11-18 IL IL259068A patent/IL259068B/en unknown
- 2016-11-22 TW TW105138246A patent/TWI721043B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| EP3380644B1 (en) | 2019-08-21 |
| TW201734247A (en) | 2017-10-01 |
| IL259068B (en) | 2022-07-01 |
| US10801105B2 (en) | 2020-10-13 |
| IL259068A (en) | 2018-06-28 |
| JP2018538442A (en) | 2018-12-27 |
| US20180320265A1 (en) | 2018-11-08 |
| EP3380644A1 (en) | 2018-10-03 |
| KR20180085728A (en) | 2018-07-27 |
| CN108368606A (en) | 2018-08-03 |
| WO2017089230A1 (en) | 2017-06-01 |
| TWI721043B (en) | 2021-03-11 |
| CN108368606B (en) | 2021-04-13 |
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