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  • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
  • H10K10/462—Insulated gate field-effect transistors [IGFETs]
  • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
  • H10K10/472—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only inorganic materials
• • H—ELECTRICITY
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  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02107—Forming insulating materials on a substrate
  • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
  • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
  • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
• • H—ELECTRICITY
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  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/02—Details
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  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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  • H05B33/00—Electroluminescent light sources
  • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
  • H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
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  • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
  • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
  • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
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  • H10K50/00—Organic light-emitting devices
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  • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
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  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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  • H10K50/805—Electrodes
  • H10K50/81—Anodes
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  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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  • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

• the invention relates to an optoelectronic component, in particular an organic optoelectronic component, in which an amorphous dielectric layer is arranged on the anode.
• the efficiency and service life of optoelectronic devices such as light-emitting diodes, infrared-emitting light-emitting diodes, organic light-emitting diodes (OLEDs), organic solar cells or functional-layer organic photodetectors can be greatly reduced by the occurrence of a short circuit.
• optoelectronic devices such as light-emitting diodes, infrared-emitting light-emitting diodes, organic light-emitting diodes (OLEDs), organic solar cells or functional-layer organic photodetectors can be greatly reduced by the occurrence of a short circuit.
• An object of the invention is to provide an optical device in which the susceptibility to short circuits can be reduced.
• An optoelectronic component comprises a substrate, an anode and a cathode and at least one arranged between the anode and the cathode active layer, eg emitter layer. Furthermore, an amorphous dielectric layer is arranged directly on the cathode-side surface of the anode.
• This layer contains or consists of a metal oxide, a metal nitride and / or a metal oxynitride; the metal contained in the metal oxide, metal nitride or metal oxynitride is selected from one or more of the metals of the group consisting of aluminum, gallium, titanium, zirconium, hafnium, tantalum, lanthanum and zinc.
• a layer or element disposed "on top" of another layer or element refers to one layer or element directly in direct mechanical and / or electrical contact (ie, directly) on the other layer Furthermore, it can also mean that the one layer or the one element is arranged indirectly on the other layer or the other element, in which case further layers and / or elements can then be arranged between the one and the other layer be arranged between the one and the other element.
• indirect contact then further layers and / or elements between the one and at least be arranged one of the two other layers or between the one and at least one of the two other elements.
• an “amorphous” layer is understood as meaning a layer in which no sharp Bragg reflections (or signals) are obtained by means of X-ray diffraction (XRD) .
• XRD X-ray diffraction
• an amorphous layer is therefore understood to mean a layer in which the "crystallites” have a maximum diameter of 2.5 nm.
• an amorphous material in the context of the present invention is characterized in most cases by the fact that the density of this amorphous material is at least ten percent, often at least 15 percent and often more than 20 percent lower than that of the corresponding fully crystalline naturally occurring material (in several modifications of the naturally occurring
• corundum has a density of 3.99 g / cm 3 and amorphous alumina for the purposes of the present invention has a density of about 2.8 to 3.4 g / cm 3 , often 2.8 to 3 g / cm 3 .
• the density of the amorphous layer can be determined by X-ray reflectometry (XRR).
• an amorphous dielectric layer can furthermore be understood to mean a layer in which only the surface on one or both main sides of the layer (namely, the side of the dielectric layer facing the anode or emitter layer) is amorphous over the entire surface in the sense of the present invention.
• This can be detected by means of angle-dependent X-ray photoelectron spectroscopy (XPS) (again, there are no sharp signals for the near-surface areas).
• XPS angle-dependent X-ray photoelectron spectroscopy
• the optoelectronic component with a dielectric layer according to the invention is distinguished by the fact that, due to the dielectric layer, a significantly lower frequency of short circuits can be recorded and the current efficiency is increased.
• the use of an amorphous dielectric layer has the advantage over a non-amorphous dielectric layer in that no grain boundaries can form in the layer in the vertical direction; According to the invention, it has been recognized that this again results in a significant reduction in the frequency of short-circuits.
• the optoelectronic component according to the invention is an organic light-emitting diode
• the reduced number of short-circuits can also be recognized on the appearance of the OLED.
• the OLED according to the invention has a significantly more homogeneous illumination image;
• the number of "black spots” is also significantly lower than in the comparison OLEDs and mostly zero.
• Black spots are here understood areas that are visible to the naked eye (in which the maximum diameter is therefore greater than or equal to 50 microns).
• the material of the amorphous dielectric layer is a
• Metal oxide a metal nitride or metal oxynitride, wherein the metal may be aluminum, gallium, titanium, zirconium, hafnium, tantalum, lanthanum and / or zinc.
• these compounds have the formula M m E n , where M is the metal, E is oxygen and / or nitrogen and m and n are integers.
• the metal is present in particular in the oxidation state II (zinc), III (aluminum, gallium, lanthanum), IV (titanium, zirconium, hafnium) or V (tantalum); the (formal) proportion of the metal in other oxidation states is at most 2 atomic% and is usually less than 0.5 atomic% and often equal to zero.
• the concrete indices m and n are therefore given due to the valence 2 for oxygen and 3 for nitrogen; it results (in the order of the oxide oxidation states described above, for example, the formulas MO, M2O3, MO2 and M 2 O 5 ).
• the above compounds may also have some non-stoichiometry; however, (corresponding to the The deviation from the integer index is usually not more than 2 percent (in the case of a compound of the type M 2 O 5 , therefore, the non-stoichiometry should not be greater than for the compound M ⁇ 96 O 5 ).
• the above compounds may also have some non-stoichiometry; however, (corresponding to the The deviation from the integer index is usually not more than 2 percent (in the case of a compound of the type M 2 O 5 , therefore, the non-stoichiometry should not be greater than for the compound M ⁇ 96 O 5 ).
• the above compounds may also have some non-stoichiometry; however, (corresponding to the The deviation from the integer index is usually not more than 2 percent (in the case of a compound of the type M 2 O 5 , therefore, the non-stoichiometry should not be greater than for the compound M ⁇ 96 O 5 ).
• the above compounds may also have some non
• Dielectric constants are less well suited for the prevention of short circuits.
• the optoelectronic component according to the invention has a hole injection layer which is arranged directly on the dielectric layer (specifically on the side facing away from the anode) and has a thickness of, in particular, less than or equal to 5 nm.
• the thickness of the hole injection layer is at least 1 nm; Often, the thickness of this layer is 1 to 2 nm.
• the thickness of the hole injection layer can be significantly reduced. According to the invention it was recognized that while the
• the dielectric contained in the optoelectronic component is the dielectric contained in the optoelectronic component
• Layer to a thickness of 0.1 to 100 nm Usually, a thickness of 0.1 to 3 nm, in particular from 0.1 to 1 nm, for example from 0.5 to 1 nm is useful.
• the luminance of an optoelectronic component according to the invention is at least 1000 cd / m 2, usually even more than 3000 cd / m 2 .
• the efficiency of the luminance is usually about 5 to 10 cd / A at an SSttrrcom density of 10 to 200 mA / cm 2 .
• the layer should as far as possible cover the entire surface of the anode and have no gaps.
• the homogeneity of the layer is therefore not only dependent on the application method for the dielectric layer - the surface quality of the underlying anode also plays a role. If this surface has pores or undercuts, it is preferable to select a method in which the pore surface is also completely covered by the dielectric layer or the pores are filled with it and no gaps occur in the dielectric layer even with undercuts. In order to be able to realize this, depending on the method used, layer thicknesses of 5 to 15 nm or even greater layer thicknesses may be required.
• the dielectric layer of the optoelectronic component consists of aluminum oxide or contains this.
• alumina has a particularly low dielectric constant.
• the anode comprises a transparent conductive oxide, in particular indium tin oxide.
• Transparent conductive oxides are transparent, conductive materials, generally metal oxides, such as zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide or indium tin oxide (ITO) in addition to binary metal oxygen compounds, such as ZnO, SnO 2 or In2 ⁇ 3 ternary metal-oxygen compounds, such as Zn 2 SnO 4, CdSnO3, ZnSn ⁇ 3, MgIn 2 O 4, Galn ⁇ 3, Zn 2 In 2 O or In 4 Sn 3 O ⁇ 2 or mixtures of different transparent conductive oxides to the group of TCOs.
• binary metal oxygen compounds such as ZnO, SnO 2 or In2 ⁇ 3 ternary metal-oxygen compounds, such as Zn 2 SnO 4, CdSnO3, ZnSn ⁇ 3, MgIn 2 O 4, Galn ⁇ 3, Zn 2 In 2 O or In 4 Sn 3 O ⁇ 2 or mixtures of different transparent
• the TCOs do not necessarily correspond to a stoichiometric composition and may also be p-doped or n-doped.
• the dielectric layer can be applied particularly easily and, if the radiation emission takes place on the anode side, a particularly high transparency of the optoelectronic component, however, the anode can alternatively also comprise a metal, in particular comprise or consist of a metal layer.
• the material of such an electrode may then be selected from one or more of the metals of the group aluminum, barium, indium, Silver, gold, magnesium, calcium and lithium and compounds, in particular alloys, thereof.
• the homogeneity of the layer thickness is independent of the surface structure of the layers directly adjacent to the dielectric layer, in particular of the layer to which the dielectric layer is applied, in particular independently of the surface structure of the anode of the optoelectronic component.
• the dielectric layer can thus be designed such that it can at least partly or approximately follow the surface structure of the anode, which means in particular that the cathode-side surface of the dielectric layer partially or approximately follows the topographical structure of the interface between dielectric layer and anode (and the surface of the dielectric layer, as it were, images the surface of the anode).
• the cathode-side surface of the dielectric layer at least partially follows the interface between the anode and the dielectric layer and thus the surface structure of the anode means according to the invention in particular that the cathode-side surface of the dielectric layer also has a topographical surface structure.
• the surface structure of the cathode-side surface of the dielectric layer may in particular be the same or similar to the topographic surface structure of the cathode-facing surface of the anode.
• “Equal” or “similar” here means that the respective topographic surface structures of the cathode-facing sides of the anode and the dielectric layer have the same or similar height profiles with mutually corresponding structures such as elevations and depressions.
• these topographical surface structures can each have elevations and depressions arranged laterally next to one another have a certain characteristic sequence which, apart from relative height differences of the elevations and depressions, are the same for the said topographical surface structures.
• a surface that at least partially follows the topographical surface structure of another surface can have a protrusion arranged above a protrusion or a depression arranged above a depression of the topographic surface structure of the surface of the respectively adjacent layer.
• the relative height difference between adjacent elevations and depressions of one surface can also be different than the relative height difference of the corresponding elevations and depressions of the topographical surface structure of the other surface - but often this relative height difference is also approximately the same.
• the dielectric layer may in particular have a thickness which is independent or approximately independent of the surface structure of the anode is.
• the layer thickness of the dielectric layer can therefore in particular have a thickness variation of at most 10 percent, frequently less than or equal to 5 percent, measured on the total thickness of the dielectric layer.
• Such a configuration of the dielectric layer with such a small thickness variation can also be referred to as a so-called "conformal coating.”
• the thickness variation of the dielectric layer can be very thin for thin layers (in particular if the layer is only up to 10 atomic layers thick or up to 1 nm is thick), and the thickness variation in such thin layers is ⁇ 2 atomic layers (usually even ⁇ 1 atomic layer).
• the dielectric layer may have a thickness which is smaller than the dimensions of at least some structures and in particular macroscopic structures of the surface structure of the anode.
• Structures of the surface structure which are resolvable by means of visible light are attributed to the macroscopic structures.
• This means, in particular, that structures designated here as macroscopic have dimensions of greater than or equal to approximately 400 nm. Smaller structures are referred to as microscopic structures.
• the dielectric layer may follow the microscopic structures of the surface structure of the anode, the dimensions of which are greater than the thickness of the dielectric layer.
• the thickness of the dielectric layer may also be independent of pores in the cathode-facing surface of the anode.
• the diameter of the pore for bottle-like pores, etc., the smallest diameter of the pore
• the pore surface can be uniform and in the above sense be provided at least almost the same thickness of the dielectric layer in which the dielectric layer of the surface structure of the anode follows.
• the layer thickness of the dielectric layer is greater than half the diameter of these pores, then the dielectric layer will cover the pores without following the surface structure of these pores and still have a thickness which is at least approximately constant in the above sense.
• the mean roughness R a of TCO anodes in particular of ITO anodes, is typically less than or equal to 1.5 nm and is generally less than 2.5 nm.
• ALD atomic layer deposition
• Layer formation in pores and undercuts of the application method is independent.
• the atomic layer deposition is carried out plasma-free. This leads to a particularly homogeneous layer thickness of the formed dielectric layer. While in plasma-assisted atomic layer deposition, a reaction of the precursor with the plasma can not be excluded (which can still lead to a reaction in the gas phase and therefore the formation of not completely uniform monolayers), this is not the case with plasma-free ALD.
• the plasma-free ALD usually leads to a better result;
• full coverage of the anode surface and a reasonably uniform layer thickness can only be achieved by plasma-free ALD.
• a dielectric layer produced by means of atomic layer deposition is also distinguished in particular by the fact that it is usually free or substantially free of gas inclusions.
• no gas inclusions due to a carrier gas used in the deposition of the layer are obtained.
• such inclusions are always found (for example, inclusions of argon as a carrier gas).
• gas inclusions are conceivable which are based on the precursor material used (for example methane). Due to the successive deposition of the atomic layers, however, such inclusions can generally not be found in plasma-free ALD. Only with plasma-assisted ALD is there a certain tendency to form gas inclusions (which, however, depends on the concrete deposition conditions).
• the atomic layer deposition is carried out in particular as follows:
• a substrate with an electrode layer to be coated thereon is firstly used in a reactor in which the ALD is performed, fed.
• the substrate or the reactor is then subjected to an absorption pulse (method step B1).
• the reactor either a precursor or an oxidizing agent (or instead of an oxidizing agent, a reducing agent) is supplied.
• An oxidizing agent is required when oxidation of the precursor or a component of the precursor is required to obtain a layer of the desired composition (for example, in the preparation of metal oxide layers); a reducing agent is required if a reduction of the precursor or a component of the precursor is required to obtain the layer to be formed, or the layer to be formed has a component "transferred to the precursor metal" by the reaction with the reducing agent (for example, a nitride).
• the precursor or the oxidizing or reducing agent is usually fed to the reactor in gaseous form As a rule, a complete or at least almost complete coverage of the surface with this gaseous compound takes place If a precursor with particularly bulky substituents is used
• an inert gas can be used (for example, argon).
• the rinsing and / or evacuation step is generally carried out in such a way that a certain constant purge gas flow flows through the reactor and the pressure conditions prevailing before the adsorption pulse is carried out are successively rebuilt.
• a reaction pulse (process step B3), in which the substrate with the absorbed precursor with an oxidizing agent (or with a reducing agent) is applied or - if not the precursor is absorbed on the substrate but the oxidizing agent (or the reducing agent) with a precursor is charged.
• a reaction of precursor and oxidizing agent or precursor and reducing agent can take place, whereby a monolayer of the metal oxide or metal nitride or metal oxinitride (the dielectric layer of the present invention) is formed.
• this may be the surface to be coated or the
• Reactor are heated to allow thermal support of the reaction of precursor and oxidizing or reducing agent.
• process step B4 a further rinsing and / or evacuation step is usually carried out in order to remove excess molecules of the component fed during the reaction pulse from the reactor.
• absorption pulse In order to get to the desired layer produced by ALD, absorption pulse, rinsing / evacuation step, Repeat the reaction pulse and the second rinsing / evacuation step one after the other in the order indicated until the desired number of atomic layers have been deposited (or the desired layer thickness has been reached).
• the ALD process is carried out such that the layer deposition (method step B) or the multiple repetition of method steps B1, B2, B3 and B4 is carried out at a temperature of at least 60 ° C. and / or a maximum pressure of 50 mbar , If the process parameters are chosen in this way, it is ensured on the one hand that the absorption taking place in process step B2 (absorption pulse) actually leads to a monolayer and, on the other hand, a complete reaction takes place in process step B3 (reaction pulse). Furthermore, it can be achieved by the low pressure (and possibly also the elevated temperature) that the precursors used or the oxidizing or reducing agents are present in gaseous form.
• the temperature in process step B) is 80 to 260 ° C. In such a reaction window, it is ensured that no damage to a more sensitive surface to be coated takes place.
• An organic layer (for example, a hole injection layer) provided as a surface to be coated, so the reaction temperature should not exceed 100 0 C and preferably be up to 100 0 C 80 to prevent damage to this layer.
• Process step B is preferably carried out at a pressure of at most 5 mbar, usually more than 0.1 mbar. This also ensures that a particularly "densely packed" monolayer can arise in the absorption pulse.
• Suitable oxidizing agents are, in particular, water and ozone (but also oxygen or hydrogen peroxide).
• the aforementioned oxidizing agent may be present (for example, an 0 2/0 3 mixture) in mixtures.
• water When using water as an oxidizing agent, the ALD process will often be carried out so that in the absorption pulse water is absorbed on the surface to be coated; the precursor (for example trimethylaluminum) is then fed in the reaction pulse.
• the precursor for example trimethylaluminum
• the precursor will often be adsorbed in the adsorption pulse.
• the aforementioned oxidizing agents are used in particular for the production of metal oxides.
• the precursor for example a metal amide
• the precursor used for the ALD process is a metal alkyl, a metal alkoxide, a metal dialkylamide and / or a metal halide compound.
• the precursors used are only one type of substituent (ie alkyl, alkoxide,
• Dialkylamide or halide however, mixed systems (carrying, for example, a halide and an alkoxide group) can also be used.
• aluminum alkyl compounds for example trimethylaluminum
• aluminum alkoxide compounds for example aluminum ethoxide
• gallium oxide gallium alkyl compounds (for example trimethylgallium) or gallium halides (for example gallium chloride) are frequently used.
• the metal halides for example TiCl 4 , ZrCl 4 or HfCl 4 or metal alkoxide compounds (for example Ti (OR) 4 , Zr (OR) 4 or Hf (OR) 4
• Tantalum halides for example tantalum chloride
• the corresponding alkoxy or halide compounds for lanthanum oxides are frequently used.
• the zinc alkyl compounds for example dimethylzinc
• the zinc halides for example zinc chloride
• zinc can also be used in elemental form is usually the Metalldialkylamid compounds of the respective elements to the production of metal nitrides. ((CH, for example, M k (N 3) 2) i - where k and 1 are integers) are used.
• the deposition of an oxynitride layer may, for example, be done by alternately depositing nitride and oxide layers.
• the substrate of the component is in particular as a carrier element for electronic elements, in particular optoelectronic elements, suitable.
• the substrate may contain or consist of glass, quartz and / or a semiconductor material.
• the substrate may contain or consist of a plastic film or a laminate with one or more plastic films.
• Plastic may include one or more polyolefins, such as high and low density polyethylene (PE) and polypropylene (PP). Furthermore, the plastic may also include polyvinyl chloride (PVC), polystyrene (PS), polyester and / or preferably polycarbonate (PC), polyethylene terephthalate (PET), polyethersulfone (PES) and / or polyethylene naphthalate (PEN).
• PVC polyvinyl chloride
• PS polystyrene
• PC polycarbonate
• PET polyethylene terephthalate
• PES polyethersulfone
• PEN polyethylene naphthalate
• the substrate may comprise metal, in particular a metal foil, for example.
• a substrate comprising a metal foil or a metal foil may, for example, comprise an aluminum foil, a copper foil, a stainless steel foil or a combination or a layer stack thereof.
• the substrate may comprise one or more of the abovementioned materials and may be transparent, partially transparent or even opaque.
• the optoelectronic component according to the invention may in particular comprise an organic light emitting diode (OLED), an organic photodiode (OPD), an organic solar cell (OSC), an organic thin film transistor (OTFT) or an integrated circuit (IC) or a plurality or combination of the aforementioned elements or consist of only one of these elements.
• OLED organic light emitting diode
• OPD organic photodiode
• OSC organic solar cell
• OFT organic thin film transistor
• IC integrated circuit
• the device may further comprise a functional layer sequence with at least one organic functional layer.
• This layer sequence is arranged in particular between the two electrodes. If the component has, for example, an OLED, an OPD and / or an OSC, the functional layer sequence can have an active region (for example an emitter layer) which is suitable for generating or detecting electromagnetic radiation during operation of the device. Furthermore, the component then often has a transparent substrate.
• first electrode and / or the second electrode can be transparent and, for example, contain or consist of a TCO.
• An electrode with such a material can be designed, in particular, as an anode, that is to say as a hole-injecting material.
• the first and / or the second electrode can comprise a metal, which can serve, for example, as a cathode material, that is to say as an electron-injecting material.
• aluminum, barium, indium, silver, gold, magnesium, calcium or lithium, as well as compounds, combinations and alloys thereof, may prove advantageous as the cathode material.
• one or both electrodes may also have combinations, in particular layer sequences of TCOs and / or metals.
• the at least one functional layer may comprise an organic layer or a layer sequence of a plurality of organic functional layers.
• organic polymers, organic oligomers or organic small, non-polymeric (monomeric) molecules ("small molecules") or combinations of these classes of compounds may be contained or the layers may consist of these classes of compounds or mixtures thereof.
• a component embodied as an organic electronic component has a functional layer which is known as a
• Lochtransport Faculty is executed, for example, in the case of an OLED an effective hole injection into a electroluminescent layer or to allow an electroluminescent region.
• the active layer can be embodied as an electroluminescent layer.
• Suitable materials for this are materials which have a radiation emission due to fluorescence or phosphorescence, wherein the layer may consist of these materials or contains the emitter materials present in a matrix.
• the generated radiation can have wavelength ranges from the ultraviolet to the red spectral range.
• a component having one or more OLEDs can in particular be designed as a lighting device or as a display and can have a large active light-emitting surface.
• Large area may mean that the component has an area greater than or equal to a few square millimeters, preferably greater than or equal to one square centimeter, and particularly preferably greater than or equal to one square decimeter.
• the cited list of embodiments of the device is not intended to be limiting. Rather, the device may comprise further electronic elements and / or functional layer sequences which are known to the person skilled in the art and which therefore are not listed here.
• FIGS. 1 and 2 each show schematic overviews of an embodiment of an optoelectronic component according to the present invention.
• FIG. 3 and FIGS. 4A-4C show schematic representations of sections of dielectric layers on an anode layer.
• FIG. 1 shows the schematic structure of an organic radiation-emitting component. From bottom to top, the following layer structure is realized: At the bottom is the substrate 1, which can be transparent, for example, made of glass. An anode layer 2, which may be, for example, a transparent conductive oxide such as indium tin oxide (ITO), may be present on it. Over this anode layer 2 is a dielectric layer 3, for
• a hole transport layer 4 which consists of a material or contains this, which may for example be selected from tertiary amines, Carbazolderivaten, polyaniline or Polyethylendioxythiophen.
• a material or contains this which may for example be selected from tertiary amines, Carbazolderivaten, polyaniline or Polyethylendioxythiophen.
• exemplary is NPB (N, N'-bis (naphth-1-yl) -N, N'-bis (phenyl) benzidine and TAPC (di- [4- (N, N-ditolyl-amino) -phenyl] cyclohexane
• An organic emitter layer 6 follows the hole transport layer, for example an organic emitter layer 6.
• Such an organic emitter layer may contain or consist of an organic or organometallic compound as the emissive material, in particular derivatives of polyfluorene, polythiophene and polyphenylene (eg, 2- or 2, 5-substituted poly-p-phenylenevinylene) as well as metal complexes, for example iridium complexes such as blue phosphorescent FIrPic (bis (3,5-difluoro-2- (2- pyridyl) phenyl (2-carboxypyridyl) iridium III), green phosphorescent Ir (ppy) 3 (tris (2-phenylpyridine) iridium (III)), red phosphorescent Ru (dtb-bpy) 3 * 2 (PF 6 ) ( Tris [4, 4'-di-tert-butyl- (2,2 ') - bipyridine] ruthenium (III) complex) and blue fluorescent DPAVBi (4, 4-bis [4- (di-
• a cathode for example a metal cathode or a cathode, which is likewise made of a transparent conductive oxide (which leads to a top / bottom emitter), is arranged on the emitter layer.
• the layer thickness of the dielectric layer 3 may be, for example, 1.5 nm, that of the hole injection layer 4 may be 15 nm, for example.
• the OLED When a voltage is applied between the anode and cathode, current flows through the component and photons are released in the organically active layer, which in the form of light via the transparent anode and the substrate or in the case of a top / bottom emitter via the transparent cathode Leave component.
• the OLED emits white light;
• the emitter layer contains either several different colors (for example blue and yellow or blue, green and red) emitting
• the emitter layer can also be composed of several sub-layers, in each of which one of the named colors is emitted, whereby the mixture of the different colors results in the emission of light with a white color impression.
• a converter material may be arranged which at least partially absorbs the primary radiation and emits secondary radiation of a different wavelength, so that from a (not yet white) primary radiation through the Combination of primary and secondary radiation gives a white color impression.
• the component shown in FIG. 1 can be produced, in particular, in which the anode for the first time on the substrate
• Example is sputtered on and then by means of ALD, the dielectric layer is applied. Subsequently, the hole injection layer 4, the active layer (emitter layer) 6 and the cathode are applied.
• Figure 2 shows an OLED, which is designed as a top emitter; If the cathode 10 is transparent, then it is a top / bottom emitter.
• a cathode 10 is arranged (which is formed for example of a metal or - in particular, when a transparent electrode is desired - is made of a TCO).
• An electron injection layer 9 is arranged on the cathode, on which there is an electron transport layer 8.
• This emitter layer can be designed as described for FIG.
• a hole transport layer 5 On the emitter layer is a hole transport layer 5, which may for example comprise TPBi (2,2 ', 2''- (1, 3, 5-benz-triyl) -tris (1-phenyl-lH-benzimidazole)), for example.
• a thin hole injection layer 4 On the hole transport layer is again a thin hole injection layer 4, for example, with a thickness of 15 nm.
• the dielectric layer 3 for example, of aluminum oxide
• the organic layers 4 to 9 are applied by means of a wet process (for example spin coating); This is particularly useful if the layers to be applied contain a polymer.
• the organic layers can also be applied by vapor deposition.
• the substrate to be coated with electrode or electrode and dielectric layer is introduced into a recipient, which contains the various organic materials in different
• a source of matrix material and a source of p-type dopant are deposited. Accordingly, the common deposition of emitter material and matrix material or of different emitter materials and matrix material for the emitter layer 6 takes place. Accordingly, the deposition of the further organic layers can take place. Finally, a mixed deposition is also possible in which first organic layers are applied by spin coating and the other organic layers are applied by evaporation.
• an aluminum layer can thus first be applied to a substrate by means of RF sputtering as an ITO layer as a cathode (in the case of a top / bottom emitter) or by means of CVD (chemical vapor deposition).
• This has the advantage that it has a reflective effect, that is, the radiation emitted in the active layer, which is directed in the direction of the substrate, is mirrored at this reflective electrode and deflected in the direction of the transparent electrode.
• the organic layers 9 to 4 (beginning with the electron injection layer 9 and ending with the hole injection layer 4) are subsequently applied to this cathode.
• a dielectric layer 3 (made of aluminum oxide, for example) is then applied to the hole injection layer by means of ALD; In order not to damage the already applied organic layers, the ALD process is therefore carried out at a temperature of about 90 to 100 0 C. Finally, the transparent anode (for example made of ITO) is deposited on this dielectric layer 3 by means of sputtering.
• FIG. 3 shows a detail of an optoelectronic component which shows the situation after application of the dielectric layer 3 to the anode 2.
• the surface 21 of the anode layer 2, on which the dielectric layer 3 is applied has a surface structure in the form of a roughness, which is obtained, for example, by the application method with which the
• Anode layer 2 is applied, is conditional. Furthermore, impurities on the surface 11 of the substrate 1 during the application of the anode layer may cause the surface 21 of the anode layer 2 to have a roughness.
• the dielectric layer 3 has a thickness that is identified by the reference numeral 31 purely by way of example in two places.
• the dielectric layer 3 follows the surface structure of the surface 21 of the anode layer 2 in the manner described in the general part, so that the thickness 31 of the dielectric layer 3 is almost independent of the surface structure of the anode layer 2.
• the thickness variation of the thickness 31 is less than 10 percent.
• the dielectric layer 3 is formed such that it can at least almost follow the microscopic structures of the surface structure 21 of the anode layer.
• FIGS. 4A to 4C further details of the surface structure of anode layer 2 and dielectric layer 3 of the optoelectronic component according to the invention are shown in this context.
• various macroscopic structures are depicted.
• the surface 21 of the dielectric layer 2 has a depression, which has a significantly greater depth compared to the diameter.
• the dielectric layer 3 follows the surface structure 21 of the anode layer 2 and therefore forms on the entire surface of the opening a continuous layer with a constant thickness.
• the depth-to-diameter ratio of the recess changes.
• the anode layer 2 has a surface 21 with a protruding portion, while the anode layer 2 in Figure 4C has a downwardly broadening opening (like a bottle pore).
• the dielectric layer may be formed with a nearly constant thickness as shown in FIG.

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