EP2406835A2 - Boîtier del pour grille de connexion, grille de connexion utilisant le boîtier del, et procédé de fabrication du boîtier del - Google Patents

Boîtier del pour grille de connexion, grille de connexion utilisant le boîtier del, et procédé de fabrication du boîtier del

Info

Publication number
EP2406835A2
EP2406835A2 EP10750967A EP10750967A EP2406835A2 EP 2406835 A2 EP2406835 A2 EP 2406835A2 EP 10750967 A EP10750967 A EP 10750967A EP 10750967 A EP10750967 A EP 10750967A EP 2406835 A2 EP2406835 A2 EP 2406835A2
Authority
EP
European Patent Office
Prior art keywords
led
layer
ring
sealing layer
package
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP10750967A
Other languages
German (de)
English (en)
Other versions
EP2406835A4 (fr
Inventor
The Tran Nguyen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nepes Led Corp
Original Assignee
Nepes Led Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/381,409 external-priority patent/US8039862B2/en
Priority claimed from US12/381,408 external-priority patent/US8058667B2/en
Application filed by Nepes Led Corp filed Critical Nepes Led Corp
Publication of EP2406835A2 publication Critical patent/EP2406835A2/fr
Publication of EP2406835A4 publication Critical patent/EP2406835A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape

Definitions

  • the present invention relates to a light emitting diode (LED) lead frame package, a LED package using the LED lead frame package, and a method of manufacturing the LED package, and more particularly, to a LED lead frame package, which can be easily manufactured at reduced manufacturing costs, an LED package using the LED lead frame package, and a method of manufacturing the LED package.
  • LED light emitting diode
  • a light emitting diode is a semiconductor illuminating apparatus which has various advantages as compared to conventional illuminating apparatuses. For example, an LED has a long life span, has a compact size, small power consumption, and no quicksilver pollution. Accordingly, LEDs are frequently used as new illuminating apparatuses instead of conventional illuminating apparatuses.
  • a convex lens structure is usually introduced on an outer optical layer of the LED package.
  • the convex lens structure is manufactured in advance and then mounted on the conventional LED packages. Due to this additional manufacture of the convex lens structure and an assembly process thereof, additional manufacturing process and an assembling device therefor are required.
  • an undesired air layer may be formed between the convex lens structure and a sealing layer that is already formed on the LED package.
  • the manufacture yield of the method of manufacturing a LED package according to the conventional art is relatively low, and the production costs thereof are high.
  • a phosphor layer is usually coated directly on a blue LED die or a ultraviolet (UV) LED die.
  • a blue LED die when a blue LED die is used, light having various wavelengths generated in a phosphor material may be mixed with one another or the light having various wavelengths may be mixed with blue excitation light emitted from the blue LED die, thereby emitting white light.
  • the LED die is directly coated with a phosphor layer, since the LED die and the phosphor layer are very near to each other, light emitted from the phosphor material proceeds to the LED die and is absorbed by the LED die.
  • FIG. 1 illustrates an example of the above technique disclosed in U.S. Patent No. 5,959,316.
  • a LED die 60 is mounted on a substrate 62, and a phosphor layer 66 is separated away from the LED die 60 via a spacer 64 covering the LED die 60.
  • a protection layer 68 is formed outside the phosphor layer 66.
  • light emitted from the phosphor layer 66 may be incident to the LED die 60 and onto the substrate 62 and thus be absorbed thereby without being hardly disturbed.
  • the present invention provides a light emitting diode (LED) lead frame package and a LED package using the LED lead frame package, which can be easily manufactured at reduced manufacturing costs.
  • LED light emitting diode
  • the present invention also provides an LED package in which light emitted from a phosphor material is incident to a LED die and is absorbed thereby, thereby reducing light absorption loss.
  • the present invention also provides a method of manufacturing a LED package in which a LED package is easily manufactured at reduced manufacturing costs.
  • a lead frame package comprising:
  • an insulation support portion that surrounds the heat dissipation base and the plurality of electrodes to fix the heat dissipation base and the plurality of electrodes;
  • a light emitting diode (LED) package comprising the above-mentioned lead frame package.
  • the LED package comprises:
  • a sealing layer structure that is formed to cover the LED die and comprises at least one layer having a convex external surface
  • a method of manufacturing an LED package comprising:
  • a lead frame package comprising: a heat dissipation base; a plurality of electrodes disposed around the heat dissipation base; an insulation support portion that surrounds the heat dissipation base and the plurality of electrodes to fix the heat dissipation base and the plurality of electrodes; at least two ring-shaped protrusions formed along circumferential outlines on an upper surface of the insulation support portion; and at least one ring-shaped groove formed between two of the at least two ring-shaped protrusions,
  • FIG. 1 is a cross-sectional view illustrating an example of a white light emitting diode (LED) according to the conventional art
  • FIG. 2 is a perspective view of a LED lead frame package structure according to an embodiment of the present invention.
  • FIG. 3 is a top plan view illustrating the LED lead frame package of FIG. 2;
  • FIG. 4 is a perspective view showing the arrangement of a heat dissipation base and a plurality of electrodes of the LED lead frame package illustrated in FIG. 2, not an insulation support portion, according to an embodiment of the present invention
  • FIG. 5 is a cross-sectional view illustrating the LED lead frame package structure of FIG. 2;
  • FIG. 6 is a cross-sectional view illustrating a structure of an LED package according to an embodiment of the present invention.
  • FIG. 7 is a cross-sectional view illustrating a structure of an LED package according to another embodiment of the present invention.
  • FIGS. 8 and 9 are cross-sectional views schematically illustrating the principle of a method of manufacturing an LED package, according to an embodiment of the present invention.
  • FIG. 2 is a perspective view of a structure of a light emitting diode (LED) lead frame package 20 according to an embodiment of the present invention.
  • the LED lead frame package 20 includes a heat dissipation base 2, four electrodes 1 arranged around the heat dissipation base 2, and an insulation support portion 3 that surrounds the heat dissipation base 2 and the plurality of electrodes 1 to fix the heat dissipation base 2 and the plurality of electrodes 1.
  • the LED lead frame package 20 includes four electrodes 1; however the present invention is not limited thereto, and the LED lead frame package 20 may include one or more electrodes 1.
  • the insulation support portion 3 may be formed of an insulating plastic material such as poly phthal amide (PPA).
  • FIG. 3 is a top plan view of the LED lead frame package 20 of FIG. 2.
  • the LED lead frame package 20 includes, for the four identical metal electrodes 1 that are arranged in a radial direction.
  • the four electrodes 1 may be respectively arranged at 90 degree around a center axis of the heat dissipation base 2 and protrude in a radial direction from the center axis of the heat dissipation base 2.
  • FIG. 4 is a perspective view schematically illustrating the arrangement of the heat dissipation base 2 and the four electrodes 1, not the insulation support portion 3. Referring to FIG. 4, upper surfaces of the four electrodes 1 are at the same height of a highest point of the heat dissipation base 2. Also, as illustrated in FIGS.
  • a first end portion of the electrodes 1 may face a lateral circumference of the heat dissipation base 2, and a second end portion of the electrode 1 may be disposed to protrude from an outer wall of the insulation support portion 3.
  • the upper surfaces of the electrodes 1 may be coated with, for example, a highly reflective material such as silver or aluminum.
  • the heat dissipation base 2 may have a reflective cup 10 having a cavity form.
  • a bottom surface of the reflective cup 10 may be coated with a highly reflective material such as silver or aluminum.
  • An upper surface of the reflective cup 10 is at the highest point of the heat dissipation base 2. That is, the upper surface of the reflective cup 10 may be formed at the same height as the upper surface of the electrodes 1.
  • the heat dissipation base 2 and the plurality of electrodes 1 are fixed by the insulation support portion 3 that surrounds them.
  • the electrodes 1, the heat dissipation base 2, and the insulation support portion 3 may be integrally formed with a process such as an injection molding process.
  • FIG. 5 is a cross-sectional view illustrating the structure of the LED lead frame package 20 of FIG. 2.
  • the LED lead frame package 20 may further include at least two ring-shaped protrusions, namely, ring-shaped protrusions 11, 12, 13, and 14 that are formed along circumferential outlines on an upper surface of the insulation support portion 3 and at least one ring-shaped groove, namely, ring-shaped grooves 15, 16, and 17 that are respectively formed between two of the ring-shaped protrusions 11, 12, 13, and 14.
  • the plurality of ring-shaped protrusions 11, 12, 13, and 14 and the plurality of ring-shaped grooves 15, 16, and 17 may be formed concentrically on the upper surface of the insulation support portion 3.
  • the plurality of ring-shaped protrusions 11, 12, 13, and 14 may be formed with sharp edges and inclined sidewalls.
  • the plurality of ring-shaped protrusions 11, 12, 13, and 14 and the plurality of ring-shaped grooves 15, 16, and 17 may be formed of the same PPA plastic as the insulation support portion 3, and may be a portion of the insulation support portion 3.
  • the plurality of ring-shaped protrusions 11, 12, 13, and 14 and the plurality of ring-shaped grooves 15, 16, and 17 may be formed on the upper surface of the insulation support portion 3 with a transfer molding process.
  • the plurality of ring-shaped protrusions 11, 12, 13, and 14 and the plurality of ring-shaped grooves 15, 16, and 17 may also be formed during the injection molding process in which the plurality of electrodes 1, the heat dissipation base 2, and the insulation support portion 3 are integrally formed.
  • FIG. 5 four ring-shaped protrusions and three ring-shaped grooves are formed, but the number of ring-shaped protrusions and ring-shaped grooves may be selected variously according to embodiments of the present invention.
  • FIG. 6 is a cross-sectional view illustrating a structure of an LED package 30 in which the LED lead frame package 20 is used, according to an embodiment of the present invention. Referring to FIG.
  • the LED package 30 includes a LED die 4 attached on a bottom surface of the heat dissipation base 2, a plurality of wires 6 that electrically connect the LED die 4 and the electrodes 1, a sealing layer 7 formed on the reflection cup 10 of the heat dissipation base 2 to cover the LED die 4, a phosphor layer 8 formed to cover the sealing layer 7, and an optical lens layer 9 formed to cover the phosphor layer 8.
  • the LED die 4 may be fixed on a bottom surface of the heat dissipation base 2 with, for example, a die adhesive material 5, that is, on the bottom surface of the reflection cup 10 of the heat dissipation base 2.
  • the die adhesive material 5 are a silver paste and a solder.
  • the LED package 30 includes one LED die 4 disposed on the bottom surface of the heat dissipation base 2; however the present invention is not limited thereto, and the LED package 30 can include a plurality of LED dies 4 disposed on the bottom surface of the heat dissipation base 2. For example, at least one selected from the group consisting of a UV LED, a blue LED, a green LED, and a red LED may be disposed on the bottom surface of the heat dissipation base 2.
  • the sealing layer 7, the phosphor layer 8, and the optical lens layer 9 constitute a multilayer sealing layer structure.
  • the sealing layer 7, the phosphor layer 8, and the optical lens layer 9 may have convex external surfaces.
  • an effective refractive index of the sealing layer 7 may be smaller than that of the phosphor layer 8 in a wavelength band of visible light.
  • the phosphor layer 8 emits visible light by being excited by UV light, blue light or green light.
  • the phosphor layer 8 may be formed of a mixture in which a transparent material such as glass, polycarbonate (PC), poly(methyl methacrylate) (PMMA), or silicon resin is uniformly mixed with a phosphor material.
  • a transparent material such as glass, polycarbonate (PC), poly(methyl methacrylate) (PMMA), or silicon resin is uniformly mixed with a phosphor material.
  • the phosphor material include at least one type of phosphor material that emits visible light having different wavelengths by being excited by UV light, blue light or green light.
  • the phosphor material may be at least one selected from the group consisting of various types of phosphor materials emitting visible light having different wavelengths such as blue, green, yellow, orange, or red light.
  • the green, yellow, orange, and red phosphor materials may partially absorb blue light or green light at least or completely absorb UV light to emit light spectrums having peak wavelengths in the green, yellow, orange, and red color wavelength ranges. Also, the blue phosphor material may emit a light spectrum having a peak wavelength in a blue color range by completely absorbing UV light.
  • the LED package 30 emitting white light may be provided by using the phosphor layer 8.
  • the phosphor layer 8 may be excited by blue light to emit light having a yellow peak wavelength. Then the yellow light and residual blue light are mixed, thereby forming white light.
  • the phosphor layer 8 may include various types of phosphor materials that emit light of various wavelengths by being excited by light having an excitation wavelength emitted from the LED die 4. In this case, white light is emitted as the light of various wavelengths are mixed.
  • the phosphor layer 8 may include blue, green, and red phosphor materials that respectively emit light having blue, green, and red peak wavelengths by being excited by the near-UV rays. Then as the blue, green and red lights are mixed, white light is formed.
  • the sizes of the sealing layer 7, the phosphor layer 8, and the optical lens layer 9 and curvature of upper surfaces thereof may be easily adjusted with the plurality of ring-shaped protrusions 11, 12, 13, and 14 and the plurality of ring-shaped grooves 15, 16, and 17.
  • an edge of the sealing layer 7 is extended to the ring-shaped protrusion 11
  • an edge of the phosphor layer 8 is extended to the ring-shaped protrusion 12
  • an edge of the optical lens layer 9 is extended to the ring-shaped protrusion 13.
  • the sizes of the sealing layer 7, the phosphor layer 8, and the optical lens layer 9 may be easily defined. Also, by adjusting the amounts of the material of the sealing layer 7, the phosphor layer 8, and the optical lens layer 9 defined to the corresponding ring-shaped protrusions 11, 12, and 13, the curvature of the upper surfaces of the sealing layer 7, the phosphor layer 8, and the optical lens layer 9 may be easily determined.
  • the LED lead frame package 20 including the heat dissipation base 2, the plurality of electrodes 1 disposed around the heat dissipation base 2, the insulation support portion 3 that surrounds the heat dissipation base 2 and the plurality of electrodes 1 to fix the same, the plurality of ring-shaped protrusions 11, 12, 13, and 14 formed on the upper surface of the insulation support portion 3, and the plurality of ring-shaped grooves 15, 16, and 17 respectively formed between two of the plurality of ring-shaped protrusions 11, 12, 13, and 14 is manufactured using, for example, an injection molding process.
  • at least one LED die 4 is attached on a bottom surface of the heat dissipation base 2 with the die adhesive material 5, and the LED die 4 and the plurality of electrodes 1 are electrically connected to each other via a plurality of wires 6.
  • a liquid transparent resin material is filled in the reflection cup 10 of the heat dissipation base 2 to cover the LED die 4.
  • the liquid transparent resin material may be a silicon resin.
  • the liquid transparent resin material may be provided to a sufficient amount while being defined within the ring-shaped protrusion 11.
  • an external surface of the liquid transparent resin material is formed convex due to surface tension within an upper sharp edge of the ring-shaped protrusion 11.
  • a convex external surface is formed by surface tension.
  • a curvature of the convex external surface may be determined by the amount of the transparent resin material 18.
  • the transparent resin material 18 may be defined within the ring-shaped protrusion 12 again as illustrated in FIG. 9.
  • the liquid transparent resin material 18 is hardened by heat or UV ray irradiation, thereby forming the sealing layer 7. Accordingly, the size and curvature of the sealing layer 7 may be easily defined.
  • a liquid transparent resin material to which a phosphor material is uniformly mixed is formed over the sealing layer 7 to cover the sealing layer 7.
  • a mixture in which a liquid silicon resin and a phosphor material are uniformly mixed may be formed over the sealing layer 7.
  • the mixture is defined to the ring-shaped protrusion 12, and has a convex external surface within a sharp upper edge of the ring-shaped protrusion 12 due to surface tension. After the external surface of the mixture reaches a desired curvature, the liquid mixture is hardened by heat or UV ray irradiation, thereby forming the phosphor layer 8.
  • the liquid transparent resin material may be a silicon resin.
  • the liquid transparent resin material over the phosphor layer 8 is defined to the third ring-shaped protrusion 13 and has a convex external surface within a sharp upper edge of the third ring-shaped protrusion 13 due to surface tension.
  • the liquid transparent resin material over the phosphor layer 8 is hardened to form the optical lens layer 9.
  • the sealing layer 7, the phosphor layer 8, and the optical lens layer 9 may be formed to have desired sizes and desired external surface curvatures.
  • FIG. 7 is a cross-sectional view illustrating a structure of an LED package 40 according to another embodiment of the present invention.
  • the LED package 40 of FIG. 7 includes two sealing layers, namely, first and second sealing layers 7 and 7a, under the phosphor layer 8. That is, the second sealing layer 7a that is transparent is further formed between the phosphor layer 8 and the first sealing layer 7.
  • the rest of the structure of the LED package 40 of FIG. 7 is the same as that of the LED package 30 illustrated in FIG. 6. Thus, the description of the rest of the structure of the LED package 40 will be omitted.
  • the first sealing layer 7, the second sealing layer 7a, the phosphor layer 8, and the optical lens layer 9 together form a multi-layer sealing layer structure.
  • the first sealing layer 7, the second sealing layer 7a, the phosphor layer 8, and the optical lens layer 9 may have convex external surfaces.
  • an effective refractive index of the second sealing layer 7a is smaller than that of the phosphor layer 8 in a wavelength of visible light, and also smaller than that of the first sealing layer 7.
  • an edge of the first sealing layer 7 is extended to the ring-shaped protrusion 11, and an edge of the second sealing layer 7a is extended to the ring-shaped protrusion 12, and an edge of the phosphor layer 8 is extended to the ring-shaped protrusion 13, and an edge of the optical lens layer 9 is extended to the fourth ring-shaped protrusion 14.
  • the curvature of upper surfaces of the first sealing layer 7, the second sealing layer 7a, the phosphor layer 8, and the optical lens layer 9 may be easily determined.
  • the sealing layer structure of the LED package 40 illustrated in FIG. 7 may be formed by using the above-described method of manufacturing the LED package 30.
  • the difference between the LED packages 40 and 30 is that the second sealing layer 7a is formed before forming the phosphor layer 8 on the first sealing layer 7. That is, the first sealing layer 7 is first formed using the above-described method, and then a liquid transparent resin material is formed on the first sealing layer 7 to cover the first sealing layer 7.
  • the liquid transparent resin material may be a silicon resin.
  • the liquid transparent resin material is formed to have a smaller effective refractive index than that of the first sealing layer 7.
  • an additive for adjusting an effective refractive index may be added to the silicon resin that is liquid.
  • the liquid transparent resin material on the first sealing layer 7 is defined within the ring-shaped protrusion 12 and has a convex external surface in a sharp upper edge of the ring-shaped protrusion 12 due to surface tension. Then, by hardening the liquid transparent resin material on the first sealing layer 7 using heat or UV irradiation, the second sealing layer 7a may be formed. Next, in the same manner as described above, the phosphor layer 8 and the optical lens layer 9 are sequentially formed on the second sealing layer 7a. However, the material of the phosphor layer 8 is filled so as to be defined within the ring-shaped protrusion 13, and the material of the optical lens layer 9 is filled so as to be defined within the ring-shaped protrusion 14.
  • the first sealing layer 7, the second sealing layer 7a, the phosphor layer 8, and the optical lens layer 9 described above are sequentially formed using a liquid material but some of the layers may also be pre-made using separate processes.
  • the phosphor layer 8 may be formed beforehand.
  • the first sealing layer 7 is formed in the reflection cup 10 to cover the LED die 4.
  • a liquid transparent resin for forming the second sealing layer 7a is provided within a concave inner portion of the phosphor layer 8 that is pre-made to have the concave inner portion and a convex external portion.
  • the phosphor layer 8 in which the transparent resin material is filled is overturned and disposed on the first sealing layer 7, and then the transparent resin material is hardened by using heat or UV irradiation.
  • the second sealing layer 7a is formed between the first sealing layer 7 and the phosphor layer 8, and the phosphor layer 8 may be tightly fixed on the first sealing layer 7.
  • the optical lens layer 9 may be formed on the phosphor layer 8.
  • the phosphor layer 8 and the optical lens layer 9 may be pre-made.
  • the pre-made phosphor layer 8 is fixed on the first sealing layer 7 as in the above-described manner.
  • the optical lens layer 9 which is pre-made may be attached on the phosphor layer 8.
  • only the optical lens layer 9 may be pre-made.
  • the first sealing layer 7, the second sealing layer 7a, and the phosphor layer 8 are formed sequentially using a liquid material, and then the pre-made optical lens layer 9 is attached on the phosphor layer 8.
  • a multilayer sealing layer structure including the phosphor layer 8 as described above may be used.
  • a LED die 4 emitting light of the wavelength may be attached on a bottom surface of the heat dissipation base 2, and only one transparent sealing layer may be formed on the LED die 4.
  • one transparent resin material 18 may be defined within one of the first through fourth ring-shaped protrusions 11 through 14 and then hardened, thereby completing a color LED package.

Abstract

Boîtier DEL pour grille de connexion, grille de connexion utilisant le boîtier DEL, et procédé de fabrication du boîtier DEL. Pour la fabrication du boîtier DEL, une matière résineuse liquide transparente est disposée sur au moins deux protubérances annulaires présentant un bord supérieur vif et des parois latérales inclinées, et au moins une rainure annulaire est formée entre deux desdites protubérances annulaires, ce qui permet de réaliser facilement, en une passe, une couche de scellage à curbure convexe en utilisant la tension de surface.
EP10750967.1A 2009-03-10 2010-02-24 Boîtier del pour grille de connexion, grille de connexion utilisant le boîtier del, et procédé de fabrication du boîtier del Withdrawn EP2406835A4 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/381,409 US8039862B2 (en) 2009-03-10 2009-03-10 White light emitting diode package having enhanced white lighting efficiency and method of making the same
US12/381,408 US8058667B2 (en) 2009-03-10 2009-03-10 Leadframe package for light emitting diode device
PCT/KR2010/001134 WO2010104276A2 (fr) 2009-03-10 2010-02-24 Boîtier del pour grille de connexion, grille de connexion utilisant le boîtier del, et procédé de fabrication du boîtier del

Publications (2)

Publication Number Publication Date
EP2406835A2 true EP2406835A2 (fr) 2012-01-18
EP2406835A4 EP2406835A4 (fr) 2013-09-18

Family

ID=42728911

Family Applications (1)

Application Number Title Priority Date Filing Date
EP10750967.1A Withdrawn EP2406835A4 (fr) 2009-03-10 2010-02-24 Boîtier del pour grille de connexion, grille de connexion utilisant le boîtier del, et procédé de fabrication du boîtier del

Country Status (9)

Country Link
EP (1) EP2406835A4 (fr)
JP (1) JP2012520565A (fr)
KR (1) KR101111256B1 (fr)
CN (1) CN102318091A (fr)
AU (1) AU2010221920A1 (fr)
RU (1) RU2488195C2 (fr)
SG (1) SG173518A1 (fr)
TW (1) TW201044646A (fr)
WO (1) WO2010104276A2 (fr)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102130236A (zh) * 2010-12-31 2011-07-20 北京大学深圳研究生院 一种led芯片的封装方法及封装器件
TW201238086A (en) * 2011-03-03 2012-09-16 Lextar Electronics Corp Chip package structure
CN102185042A (zh) * 2011-03-28 2011-09-14 北京大学深圳研究生院 Led封装方法、封装器件、光调节方法及系统
US9159886B2 (en) 2011-04-19 2015-10-13 Intellectual Discovery Co., Ltd. Lighting apparatus with a carrier layer
US8721097B2 (en) * 2011-05-19 2014-05-13 Taiwan Semiconductor Manufacturing Company, Ltd. LED lamp with improved light output
TWI418742B (zh) * 2011-06-30 2013-12-11 Lextar Electronics Corp 發光元件的封裝結構
KR101148780B1 (ko) * 2011-11-16 2012-05-24 김종율 엘이디 패키지 및 이의 제조방법
KR101287484B1 (ko) * 2012-03-07 2013-07-19 삼성전자주식회사 발광 소자 패키지
KR20130103080A (ko) * 2012-03-09 2013-09-23 서울반도체 주식회사 Ｌｅｄ 조명장치
KR20130110997A (ko) * 2012-03-30 2013-10-10 서울반도체 주식회사 Ｌｅｄ용 렌즈 및 그 제조방법
TWI489657B (zh) * 2012-04-12 2015-06-21 Lextar Electronics Corp 發光二極體封裝件
TWI474517B (zh) * 2012-05-28 2015-02-21 Lextar Electronics Corp 發光裝置及其製造方法
KR101321101B1 (ko) * 2012-06-01 2013-10-23 주식회사 코스텍시스 기판 및 이를 이용한 소자 패키지
CN103515517B (zh) * 2012-06-20 2016-03-23 展晶科技(深圳)有限公司 发光二极管模组
CN103515502A (zh) * 2012-06-29 2014-01-15 展晶科技(深圳)有限公司 发光二极管装置
KR101504309B1 (ko) * 2013-08-27 2015-03-20 주식회사 루멘스 발광 소자 패키지 및 이를 갖는 백라이트 유닛
US9608177B2 (en) 2013-08-27 2017-03-28 Lumens Co., Ltd. Light emitting device package and backlight unit having the same
KR102188500B1 (ko) 2014-07-28 2020-12-09 삼성전자주식회사 발광다이오드 패키지 및 이를 이용한 조명장치
JP6730017B2 (ja) 2014-11-10 2020-07-29 エルジー イノテック カンパニー リミテッド 発光素子パッケージ、及びこれを含む照明システム
KR20160149363A (ko) 2015-06-17 2016-12-28 삼성전자주식회사 반도체 발광소자
CN106784260A (zh) * 2016-11-30 2017-05-31 深圳市聚飞光电股份有限公司 一种直下式led背光源的制作方法
KR102261288B1 (ko) * 2017-03-14 2021-06-04 현대자동차 주식회사 자동차 외장용 발광다이오드 패키지
CN109585632B (zh) * 2019-02-14 2019-07-30 旭宇光电（深圳）股份有限公司 大功率远程荧光粉型白光led散热封装
JP7445120B2 (ja) 2020-02-21 2024-03-07 日亜化学工業株式会社 発光装置
CN112467010B (zh) * 2020-11-13 2022-03-22 中山市聚明星电子有限公司 二极管封装工艺及封装二极管
KR102338707B1 (ko) * 2021-06-14 2021-12-13 주식회사 소룩스 광원 및 조명장치
KR102634521B1 (ko) 2023-10-31 2024-02-07 장연식 통증 완화 약물 주입시스템

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050218421A1 (en) * 2004-03-31 2005-10-06 Peter Andrews Methods for packaging a light emitting device and packaged light emitting devices
US20060012298A1 (en) * 2004-07-14 2006-01-19 Taiwan Oasis Technology Co., Ltd. LED chip capping construction
WO2006095949A1 (fr) * 2005-03-11 2006-09-14 Seoul Semiconductor Co., Ltd. Bloc de diodes electroluminescentes a matrice de cellules photoemettrices montees en serie
EP1840977A1 (fr) * 2004-12-24 2007-10-03 Kyocera Corporation Dispositif emetteur de lumiere et dispositif d'illumination
US20080012036A1 (en) * 2006-07-13 2008-01-17 Loh Ban P Leadframe-based packages for solid state light emitting devices and methods of forming leadframe-based packages for solid state light emitting devices
US20080029775A1 (en) * 2006-08-02 2008-02-07 Lustrous Technology Ltd. Light emitting diode package with positioning groove
WO2008105527A1 (fr) * 2007-03-01 2008-09-04 Nec Lighting, Ltd. Dispositif à diode électroluminescente et appareil d'éclairage

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2231951C2 (ru) * 2001-10-31 2004-07-10 Салдаев Александр Макарович Система капельного орошения
JP4211359B2 (ja) * 2002-03-06 2009-01-21 日亜化学工業株式会社 半導体装置の製造方法
JP4174823B2 (ja) * 2003-03-27 2008-11-05 サンケン電気株式会社 半導体発光装置
DE112004000864B4 (de) * 2003-05-28 2014-12-31 Seoul Semiconductor Co., Ltd. Licht abstrahlende Dioden - Baugruppe und Licht abstrahlendes Diodensystem mit mindestens zwei Wärmesenken
RU2267188C2 (ru) * 2003-06-23 2005-12-27 Федорова Галина Владимировна Светодиодное полупроводниковое устройство в корпусе для поверхностного монтажа
JP2005026400A (ja) * 2003-07-01 2005-01-27 Matsushita Electric Ind Co Ltd 半導体発光装置およびその製造方法
KR100709890B1 (ko) * 2004-09-10 2007-04-20 서울반도체 주식회사 다중 몰딩수지를 갖는 발광다이오드 패키지
KR100579397B1 (ko) * 2004-12-16 2006-05-12 서울반도체 주식회사 리드프레임과 직접 연결된 히트싱크를 채택하는 발광다이오드 패키지
RU2355068C1 (ru) * 2004-12-16 2009-05-10 Сеул Семикондактор Ко., Лтд. Рамка с выводами, имеющая поддерживающее теплоотвод кольцо, способ изготовления корпуса светоизлучающего диода с ее использованием и корпус светоизлучающего диода, изготовленный этим способом
EP1825524A4 (fr) * 2004-12-16 2010-06-16 Seoul Semiconductor Co Ltd Grille de connexion comprenant un anneau de support de dissipateur thermique, procede de fabrication d'un boitier a diode electroluminescente faisant appel a celle-ci, et boitier a diode electroluminescente fabrique au moyen de ce procede
KR101161384B1 (ko) * 2005-03-29 2012-07-02 서울반도체 주식회사 직렬접속된 발광셀 어레이를 갖는 발광다이오드 칩을탑재한 발광다이오드 패키지
CN100435361C (zh) * 2005-05-31 2008-11-19 新灯源科技有限公司 半导体发光元件封装结构
US20070001182A1 (en) * 2005-06-30 2007-01-04 3M Innovative Properties Company Structured phosphor tape article
US7365371B2 (en) * 2005-08-04 2008-04-29 Cree, Inc. Packages for semiconductor light emitting devices utilizing dispensed encapsulants
MY152857A (en) 2005-09-01 2014-11-28 Dominant Opto Tech Sdn Bhd Surface mount optoelectronic component with lens
JP4689637B2 (ja) * 2007-03-23 2011-05-25 シャープ株式会社 半導体発光装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050218421A1 (en) * 2004-03-31 2005-10-06 Peter Andrews Methods for packaging a light emitting device and packaged light emitting devices
US20060012298A1 (en) * 2004-07-14 2006-01-19 Taiwan Oasis Technology Co., Ltd. LED chip capping construction
EP1840977A1 (fr) * 2004-12-24 2007-10-03 Kyocera Corporation Dispositif emetteur de lumiere et dispositif d'illumination
WO2006095949A1 (fr) * 2005-03-11 2006-09-14 Seoul Semiconductor Co., Ltd. Bloc de diodes electroluminescentes a matrice de cellules photoemettrices montees en serie
US20080012036A1 (en) * 2006-07-13 2008-01-17 Loh Ban P Leadframe-based packages for solid state light emitting devices and methods of forming leadframe-based packages for solid state light emitting devices
US20080029775A1 (en) * 2006-08-02 2008-02-07 Lustrous Technology Ltd. Light emitting diode package with positioning groove
WO2008105527A1 (fr) * 2007-03-01 2008-09-04 Nec Lighting, Ltd. Dispositif à diode électroluminescente et appareil d'éclairage

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2010104276A2 *

Also Published As

Publication number Publication date
JP2012520565A (ja) 2012-09-06
KR20100106297A (ko) 2010-10-01
SG173518A1 (en) 2011-09-29
WO2010104276A3 (fr) 2010-11-25
KR101111256B1 (ko) 2012-02-22
RU2488195C2 (ru) 2013-07-20
WO2010104276A2 (fr) 2010-09-16
TW201044646A (en) 2010-12-16
CN102318091A (zh) 2012-01-11
EP2406835A4 (fr) 2013-09-18
AU2010221920A1 (en) 2011-09-29
RU2011134604A (ru) 2013-04-20

Similar Documents

Publication Publication Date Title
WO2010104276A2 (fr) Boîtier del pour grille de connexion, grille de connexion utilisant le boîtier del, et procédé de fabrication du boîtier del
WO2010104275A2 (fr) Abat-jour et lampe del l'utilisant
JP6339161B2 (ja) 発光素子パッケージ
US6881980B1 (en) Package structure of light emitting diode
US9039216B2 (en) Light emitting device package and light unit having the same
WO2016190644A1 (fr) Dispositif electroluminescent et lampe de véhicule comprenant celui-ci
JP5947478B2 (ja) 発光ダイオード及びその製造方法
EP2472610B1 (fr) Boîtier-puce de diode électroluminescente et son procédé de fabrication
KR20170135689A (ko) 발광 장치 및 그 제조 방법
CN1969369A (zh) 发光二极管元件
US20140367732A1 (en) Light emitting device, method of fabricating the same and lighting system having the same
WO2010150994A9 (fr) Diode électroluminescente comportant une couche de matériau de conversion de longueur d'onde et son procédé de fabrication
WO2013151265A1 (fr) Appareil d'éclairage à diodes électroluminescentes
US20170205565A1 (en) Light-emitting device and backlight including light-emitting device
WO2011078506A2 (fr) Ensemble de diodes électroluminescentes et procédé pour sa fabrication
WO2020138904A1 (fr) Module et dispositif d'éclairage ainsi que procédé de fabrication associé
WO2018139687A1 (fr) Module de del
WO2020085703A1 (fr) Module d'éclairage et dispositif d'éclairage le comprenant
KR20140095913A (ko) 발광 모듈 및 이를 구비한 조명 장치
CN106887507B (zh) 发光装置及其制造方法
CN112397487A (zh) 发光器件及制作方法和含该发光器件的显示屏和照明器材
TW201705539A (zh) 發光封裝體及其製造方法
CN109283737B (zh) 具非对称结构的发光装置、包含该发光装置的背光模组及该发光装置的制造方法
CN218939678U (zh) 一种广色域白光MiniCOB背光模组以及显示装置
CN216434594U (zh) Led灯珠及侧入式背光模组

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20110915

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR

DAX Request for extension of the european patent (deleted)
A4 Supplementary search report drawn up and despatched

Effective date: 20130821

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 33/64 20100101ALI20130814BHEP

Ipc: H01L 33/62 20100101AFI20130814BHEP

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN

18W Application withdrawn

Effective date: 20131030