EP2406835A4 - Boîtier del pour grille de connexion, grille de connexion utilisant le boîtier del, et procédé de fabrication du boîtier del - Google Patents

Boîtier del pour grille de connexion, grille de connexion utilisant le boîtier del, et procédé de fabrication du boîtier del

Info

Publication number
EP2406835A4
EP2406835A4 EP10750967.1A EP10750967A EP2406835A4 EP 2406835 A4 EP2406835 A4 EP 2406835A4 EP 10750967 A EP10750967 A EP 10750967A EP 2406835 A4 EP2406835 A4 EP 2406835A4
Authority
EP
European Patent Office
Prior art keywords
led
package
manufacturing
led package
ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP10750967.1A
Other languages
German (de)
English (en)
Other versions
EP2406835A2 (fr
Inventor
The Tran Nguyen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nepes Led Corp
Original Assignee
Nepes Led Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/381,409 external-priority patent/US8039862B2/en
Priority claimed from US12/381,408 external-priority patent/US8058667B2/en
Application filed by Nepes Led Corp filed Critical Nepes Led Corp
Publication of EP2406835A2 publication Critical patent/EP2406835A2/fr
Publication of EP2406835A4 publication Critical patent/EP2406835A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
EP10750967.1A 2009-03-10 2010-02-24 Boîtier del pour grille de connexion, grille de connexion utilisant le boîtier del, et procédé de fabrication du boîtier del Withdrawn EP2406835A4 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/381,409 US8039862B2 (en) 2009-03-10 2009-03-10 White light emitting diode package having enhanced white lighting efficiency and method of making the same
US12/381,408 US8058667B2 (en) 2009-03-10 2009-03-10 Leadframe package for light emitting diode device
PCT/KR2010/001134 WO2010104276A2 (fr) 2009-03-10 2010-02-24 Boîtier del pour grille de connexion, grille de connexion utilisant le boîtier del, et procédé de fabrication du boîtier del

Publications (2)

Publication Number Publication Date
EP2406835A2 EP2406835A2 (fr) 2012-01-18
EP2406835A4 true EP2406835A4 (fr) 2013-09-18

Family

ID=42728911

Family Applications (1)

Application Number Title Priority Date Filing Date
EP10750967.1A Withdrawn EP2406835A4 (fr) 2009-03-10 2010-02-24 Boîtier del pour grille de connexion, grille de connexion utilisant le boîtier del, et procédé de fabrication du boîtier del

Country Status (9)

Country Link
EP (1) EP2406835A4 (fr)
JP (1) JP2012520565A (fr)
KR (1) KR101111256B1 (fr)
CN (1) CN102318091A (fr)
AU (1) AU2010221920A1 (fr)
RU (1) RU2488195C2 (fr)
SG (1) SG173518A1 (fr)
TW (1) TW201044646A (fr)
WO (1) WO2010104276A2 (fr)

Families Citing this family (27)

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CN102130236A (zh) * 2010-12-31 2011-07-20 北京大学深圳研究生院 一种led芯片的封装方法及封装器件
TW201238086A (en) * 2011-03-03 2012-09-16 Lextar Electronics Corp Chip package structure
CN102185042A (zh) * 2011-03-28 2011-09-14 北京大学深圳研究生院 Led封装方法、封装器件、光调节方法及系统
US9159886B2 (en) 2011-04-19 2015-10-13 Intellectual Discovery Co., Ltd. Lighting apparatus with a carrier layer
US8721097B2 (en) * 2011-05-19 2014-05-13 Taiwan Semiconductor Manufacturing Company, Ltd. LED lamp with improved light output
TWI418742B (zh) * 2011-06-30 2013-12-11 Lextar Electronics Corp 發光元件的封裝結構
KR101148780B1 (ko) * 2011-11-16 2012-05-24 김종율 엘이디 패키지 및 이의 제조방법
KR101287484B1 (ko) * 2012-03-07 2013-07-19 삼성전자주식회사 발광 소자 패키지
KR20130103080A (ko) * 2012-03-09 2013-09-23 서울반도체 주식회사 Ｌｅｄ 조명장치
KR20130110997A (ko) * 2012-03-30 2013-10-10 서울반도체 주식회사 Ｌｅｄ용 렌즈 및 그 제조방법
TWI489657B (zh) * 2012-04-12 2015-06-21 Lextar Electronics Corp 發光二極體封裝件
TWI474517B (zh) * 2012-05-28 2015-02-21 Lextar Electronics Corp 發光裝置及其製造方法
KR101321101B1 (ko) * 2012-06-01 2013-10-23 주식회사 코스텍시스 기판 및 이를 이용한 소자 패키지
CN103515517B (zh) * 2012-06-20 2016-03-23 展晶科技(深圳)有限公司 发光二极管模组
CN103515502A (zh) * 2012-06-29 2014-01-15 展晶科技(深圳)有限公司 发光二极管装置
KR101504309B1 (ko) * 2013-08-27 2015-03-20 주식회사 루멘스 발광 소자 패키지 및 이를 갖는 백라이트 유닛
US9608177B2 (en) 2013-08-27 2017-03-28 Lumens Co., Ltd. Light emitting device package and backlight unit having the same
KR102188500B1 (ko) 2014-07-28 2020-12-09 삼성전자주식회사 발광다이오드 패키지 및 이를 이용한 조명장치
JP6730017B2 (ja) 2014-11-10 2020-07-29 エルジー イノテック カンパニー リミテッド 発光素子パッケージ、及びこれを含む照明システム
KR20160149363A (ko) 2015-06-17 2016-12-28 삼성전자주식회사 반도체 발광소자
CN106784260A (zh) * 2016-11-30 2017-05-31 深圳市聚飞光电股份有限公司 一种直下式led背光源的制作方法
KR102261288B1 (ko) * 2017-03-14 2021-06-04 현대자동차 주식회사 자동차 외장용 발광다이오드 패키지
CN109585632B (zh) * 2019-02-14 2019-07-30 旭宇光电（深圳）股份有限公司 大功率远程荧光粉型白光led散热封装
JP7445120B2 (ja) 2020-02-21 2024-03-07 日亜化学工業株式会社 発光装置
CN112467010B (zh) * 2020-11-13 2022-03-22 中山市聚明星电子有限公司 二极管封装工艺及封装二极管
KR102338707B1 (ko) * 2021-06-14 2021-12-13 주식회사 소룩스 광원 및 조명장치
KR102634521B1 (ko) 2023-10-31 2024-02-07 장연식 통증 완화 약물 주입시스템

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050218421A1 (en) * 2004-03-31 2005-10-06 Peter Andrews Methods for packaging a light emitting device and packaged light emitting devices
US20060012298A1 (en) * 2004-07-14 2006-01-19 Taiwan Oasis Technology Co., Ltd. LED chip capping construction
WO2006095949A1 (fr) * 2005-03-11 2006-09-14 Seoul Semiconductor Co., Ltd. Bloc de diodes electroluminescentes a matrice de cellules photoemettrices montees en serie
EP1840977A1 (fr) * 2004-12-24 2007-10-03 Kyocera Corporation Dispositif emetteur de lumiere et dispositif d'illumination
US20080012036A1 (en) * 2006-07-13 2008-01-17 Loh Ban P Leadframe-based packages for solid state light emitting devices and methods of forming leadframe-based packages for solid state light emitting devices
US20080029775A1 (en) * 2006-08-02 2008-02-07 Lustrous Technology Ltd. Light emitting diode package with positioning groove
WO2008105527A1 (fr) * 2007-03-01 2008-09-04 Nec Lighting, Ltd. Dispositif à diode électroluminescente et appareil d'éclairage

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RU2231951C2 (ru) * 2001-10-31 2004-07-10 Салдаев Александр Макарович Система капельного орошения
JP4211359B2 (ja) * 2002-03-06 2009-01-21 日亜化学工業株式会社 半導体装置の製造方法
JP4174823B2 (ja) * 2003-03-27 2008-11-05 サンケン電気株式会社 半導体発光装置
DE112004000864B4 (de) * 2003-05-28 2014-12-31 Seoul Semiconductor Co., Ltd. Licht abstrahlende Dioden - Baugruppe und Licht abstrahlendes Diodensystem mit mindestens zwei Wärmesenken
RU2267188C2 (ru) * 2003-06-23 2005-12-27 Федорова Галина Владимировна Светодиодное полупроводниковое устройство в корпусе для поверхностного монтажа
JP2005026400A (ja) * 2003-07-01 2005-01-27 Matsushita Electric Ind Co Ltd 半導体発光装置およびその製造方法
KR100709890B1 (ko) * 2004-09-10 2007-04-20 서울반도체 주식회사 다중 몰딩수지를 갖는 발광다이오드 패키지
KR100579397B1 (ko) * 2004-12-16 2006-05-12 서울반도체 주식회사 리드프레임과 직접 연결된 히트싱크를 채택하는 발광다이오드 패키지
RU2355068C1 (ru) * 2004-12-16 2009-05-10 Сеул Семикондактор Ко., Лтд. Рамка с выводами, имеющая поддерживающее теплоотвод кольцо, способ изготовления корпуса светоизлучающего диода с ее использованием и корпус светоизлучающего диода, изготовленный этим способом
EP1825524A4 (fr) * 2004-12-16 2010-06-16 Seoul Semiconductor Co Ltd Grille de connexion comprenant un anneau de support de dissipateur thermique, procede de fabrication d'un boitier a diode electroluminescente faisant appel a celle-ci, et boitier a diode electroluminescente fabrique au moyen de ce procede
KR101161384B1 (ko) * 2005-03-29 2012-07-02 서울반도체 주식회사 직렬접속된 발광셀 어레이를 갖는 발광다이오드 칩을탑재한 발광다이오드 패키지
CN100435361C (zh) * 2005-05-31 2008-11-19 新灯源科技有限公司 半导体发光元件封装结构
US20070001182A1 (en) * 2005-06-30 2007-01-04 3M Innovative Properties Company Structured phosphor tape article
US7365371B2 (en) * 2005-08-04 2008-04-29 Cree, Inc. Packages for semiconductor light emitting devices utilizing dispensed encapsulants
MY152857A (en) 2005-09-01 2014-11-28 Dominant Opto Tech Sdn Bhd Surface mount optoelectronic component with lens
JP4689637B2 (ja) * 2007-03-23 2011-05-25 シャープ株式会社 半導体発光装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050218421A1 (en) * 2004-03-31 2005-10-06 Peter Andrews Methods for packaging a light emitting device and packaged light emitting devices
US20060012298A1 (en) * 2004-07-14 2006-01-19 Taiwan Oasis Technology Co., Ltd. LED chip capping construction
EP1840977A1 (fr) * 2004-12-24 2007-10-03 Kyocera Corporation Dispositif emetteur de lumiere et dispositif d'illumination
WO2006095949A1 (fr) * 2005-03-11 2006-09-14 Seoul Semiconductor Co., Ltd. Bloc de diodes electroluminescentes a matrice de cellules photoemettrices montees en serie
US20080012036A1 (en) * 2006-07-13 2008-01-17 Loh Ban P Leadframe-based packages for solid state light emitting devices and methods of forming leadframe-based packages for solid state light emitting devices
US20080029775A1 (en) * 2006-08-02 2008-02-07 Lustrous Technology Ltd. Light emitting diode package with positioning groove
WO2008105527A1 (fr) * 2007-03-01 2008-09-04 Nec Lighting, Ltd. Dispositif à diode électroluminescente et appareil d'éclairage

Also Published As

Publication number Publication date
JP2012520565A (ja) 2012-09-06
KR20100106297A (ko) 2010-10-01
SG173518A1 (en) 2011-09-29
WO2010104276A3 (fr) 2010-11-25
KR101111256B1 (ko) 2012-02-22
RU2488195C2 (ru) 2013-07-20
EP2406835A2 (fr) 2012-01-18
WO2010104276A2 (fr) 2010-09-16
TW201044646A (en) 2010-12-16
CN102318091A (zh) 2012-01-11
AU2010221920A1 (en) 2011-09-29
RU2011134604A (ru) 2013-04-20

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