EP2376369A2 - Arrangement de deux substrats avec une liaison de type slid, et procédé de fabrication d'un tel arrangement - Google Patents

Arrangement de deux substrats avec une liaison de type slid, et procédé de fabrication d'un tel arrangement

Info

Publication number
EP2376369A2
EP2376369A2 EP09740308A EP09740308A EP2376369A2 EP 2376369 A2 EP2376369 A2 EP 2376369A2 EP 09740308 A EP09740308 A EP 09740308A EP 09740308 A EP09740308 A EP 09740308A EP 2376369 A2 EP2376369 A2 EP 2376369A2
Authority
EP
European Patent Office
Prior art keywords
bonding
substrate
arrangement
slid
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP09740308A
Other languages
German (de)
English (en)
Inventor
Achim Trautmann
Ando Feyh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of EP2376369A2 publication Critical patent/EP2376369A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00269—Bonding of solid lids or wafers to the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/01—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS
    • B81B2207/012—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS the micromechanical device and the control or processing electronics being separate parts in the same package
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0109—Bonding an individual cap on the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/03—Bonding two components
    • B81C2203/038—Bonding techniques not provided for in B81C2203/031 - B81C2203/037
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/143—Digital devices
    • H01L2924/1433—Application-specific integrated circuit [ASIC]

Definitions

  • the invention relates to an arrangement of two substrates, which by means of a SLID
  • the SLID technique is based on selecting two suitable metals with different melting points as bonding materials, the two metals together forming a stable alloy with a melting point higher than the lower one
  • the two bonding materials are brought into contact and heated above the melting temperature of the lower melting point so that the lower melting point metal melts and diffuses into the higher melting metal.
  • the desired, solid alloy is formed at the boundary layer.
  • the lower melting metal completely melts and is completely converted into the newly formed alloy.
  • the arrangement according to the invention or the method for producing such an arrangement has the advantage that a stable bond between two substrates can be achieved in a simple manner, without having to change over the previous manufacturing processes with great effort.
  • Figure 1 shows an embodiment of the two substrates to be joined before the
  • FIG. 2 shows the two substrates from FIG. 1 after the bonding process in cross section.
  • the inventive method for producing an arrangement with a first and a second substrate, which are interconnected by means of a SLID (solid-liquid-interdiffusion) -Bondriv is using the
  • the method basically comprises the following steps, which are provided in succession: a) provision of a first 5 and a second substrate 10, b) application of a first bonding material 15a with a first metallic material to the first substrate 5 and a second bonding material 15b to a second metallic one Material on the second substrate 10, wherein are selected as metallic materials AI and Sn, and c) performing a bonding process with the two substrates 5, 10, thereby forming a SLID (solid-liquid interdiffusion) bonding compound 15, the intermetallic Al / Sn phase 15c is achieved.
  • SLID solid-liquid interdiffusion
  • aluminum (Al) and tin (Sn) are advantageously selected as the material combination for bonding.
  • the invention is based on the new finding that this material combination is a very suitable Starting point for a SLID bond to be formed.
  • this material combination can be used to produce a stable SLID bond with the Al / Sn intermetallic phase 15c.
  • semiconductor processes are tuned to apply just aluminum as the preferred metal to substrates. So you need the inventive
  • Aluminum is preferred as the first metallic material on the first
  • Substrate 5 applied.
  • tin is preferably applied as a second metallic material on the second substrate 10.
  • the first bonding material 15a thus comprises Al as the first metallic material.
  • Bonding material 15a may provide Al for the later intermetallic
  • Al / Sn phase 15c either as pure Al or else as an Al alloy.
  • Suitable Al alloys for this purpose are AISi, AICu or AISiCu.
  • a further layer of Al or Cu can be arranged (not shown in figures). This results in the layer sequence Substra1 / Al / Sn or Substra1 / Cu / Sn. It is important that the Sn layer always forms the outermost layer.
  • a MEMS wafer is provided as the first substrate 5, as sketched in the exemplary embodiment according to FIG.
  • a MEMS wafer comprises at least one MEMS structure 7.
  • step a) as the second substrate 10, a cap wafer is provided.
  • the method according to the invention is then used to cap an M EMS wafer by means of a second wafer 10.
  • the second substrate 10 may be embodied as a substrate 10 with electronic components, either in addition to functioning as a cap wafer or even without the function as a cap wafer, (not shown in FIGS.
  • the second substrate 10 may be a cap wafer and at the same time an application specific integrated circuit (ASIC) wafer.
  • ASIC application specific integrated circuit
  • the application of Sn layers on the cap wafer can be done in various ways, such as by “tinning” or by “solder dispensing". Both methods are simple and inexpensive.
  • step b) by applying the bonding materials 15a, 15b on the two substrates 5, 10 is formed in each case a self-contained bond frame.
  • an SLID bond 15 in the form of a self-contained bonding frame is then realized.
  • a bonding layer with a layer thickness in the range from 100 nm to 10 ⁇ m is formed by the application of the two bonding materials 15a, 15b.
  • these layer thicknesses provide sufficient material for a stable SLID bond to be formed; on the other hand, said thickness range ensures a certain variation of the layer thicknesses, which can vary depending on the specific requirement.
  • step c) it is proposed in step c) to perform the
  • Bond process a process temperature T in the range of 230 0 C to 300 0 C to choose.
  • This temperature range is suitable because on the one hand it is already sufficient to cause melting of the bonding material 15b tin.
  • the temperature range is not too high, since the compound to be formed already at a very low Al content of 10% has a much higher melting point of about 400 ° C. The resulting compound thus has a much higher melting point and is therefore very temperature stable.
  • Arrangement 1 achieved with a first 5 and a second substrate 10, which are interconnected by means of a SLID (solid-liquid-interdiffusion) -BondScience 15, wherein the SLID bond 15, a first metallic material and a second metallic material in the form of intermetallic Al / Sn phase 15c.
  • SLID solid-liquid-interdiffusion
  • the Al / Sn intermetallic phase 15c should have an Al content of at least 10%, since then, as described above, an already very high melting point is achieved.
  • the exact proportion can advantageously be adjusted simply by the corresponding layer thicknesses of the first bonding material 15a and of the second bonding material 15b.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Materials For Medical Uses (AREA)

Abstract

L'invention porte sur un arrangement (1), comportant un premier substrat (5) et un deuxième substrat (10), les deux substrats (5, 10) étant reliés l'un à l'autre par une liaison (15) de type SLID (Solide-Liquide-Interdiffusion). La liaison SLID (15) comporte un premier matériau métallique et un deuxième matériau métallique, la liaison SLID (15) comprenant la phase intermétallique Al/Sn (15c). L'invention porte en outre sur un procédé de fabrication d'un tel arrangement (1).
EP09740308A 2008-12-09 2009-10-19 Arrangement de deux substrats avec une liaison de type slid, et procédé de fabrication d'un tel arrangement Withdrawn EP2376369A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE200810054415 DE102008054415A1 (de) 2008-12-09 2008-12-09 Anordnung zweier Substrate mit einer SLID-Bondverbindung und Verfahren zur Herstellung einer solchen Anordnung
PCT/EP2009/063675 WO2010066494A2 (fr) 2008-12-09 2009-10-19 Arrangement de deux substrats avec une liaison de type slid, et procédé de fabrication d'un tel arrangement

Publications (1)

Publication Number Publication Date
EP2376369A2 true EP2376369A2 (fr) 2011-10-19

Family

ID=42145303

Family Applications (1)

Application Number Title Priority Date Filing Date
EP09740308A Withdrawn EP2376369A2 (fr) 2008-12-09 2009-10-19 Arrangement de deux substrats avec une liaison de type slid, et procédé de fabrication d'un tel arrangement

Country Status (5)

Country Link
US (1) US9111787B2 (fr)
EP (1) EP2376369A2 (fr)
CN (1) CN102245498A (fr)
DE (1) DE102008054415A1 (fr)
WO (1) WO2010066494A2 (fr)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102183335B (zh) 2011-03-15 2015-10-21 迈尔森电子（天津）有限公司 Mems压力传感器及其制作方法
JP5588419B2 (ja) * 2011-10-26 2014-09-10 株式会社東芝 パッケージ
DE102012208031A1 (de) * 2012-05-14 2013-11-14 Robert Bosch Gmbh +Hybrid integriertes Bauteil und Verfahren zu dessen Herstellung
DE102017204887B4 (de) 2017-03-23 2020-07-23 Deutsches Zentrum für Luft- und Raumfahrt e.V. Verfahren mit Nutzung eines Flüssigmetalls zur Fügung thermoelektrischer Module in einem SLID-Prozess und damit hergestellte Anordnung und Verwendung zur Fügung thermoelektrischer Module

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Also Published As

Publication number Publication date
US20110233750A1 (en) 2011-09-29
US9111787B2 (en) 2015-08-18
CN102245498A (zh) 2011-11-16
DE102008054415A1 (de) 2010-06-10
WO2010066494A2 (fr) 2010-06-17
WO2010066494A3 (fr) 2011-03-10

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