EP2359127A1 - Elektronisches bauelement - Google Patents
Elektronisches bauelementInfo
- Publication number
- EP2359127A1 EP2359127A1 EP09752374A EP09752374A EP2359127A1 EP 2359127 A1 EP2359127 A1 EP 2359127A1 EP 09752374 A EP09752374 A EP 09752374A EP 09752374 A EP09752374 A EP 09752374A EP 2359127 A1 EP2359127 A1 EP 2359127A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- electronic component
- film
- covered
- layer thickness
- component according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
Definitions
- the invention relates to an electronic component according to the preamble of claim 1.
- Electronic components generally include a wiring pattern on a substrate.
- such electronic components may have a thin film that contacts the wiring pattern.
- the film generally has a smaller layer thickness than the conductor track structure.
- Such electronic components are used, for example, as gas-sensitive FeId effect transistors based on semiconductors in sensor applications.
- the film, which has the smaller layer thickness than the conductor track structure usually represents the gate electrode.
- the application of a gas to be detected leads to a change of the current flowing from the source electrode to the drain electrode through the transistor.
- surfaces are required which are permeable at least to individual constituents of the gas species to be detected. These may be both components of a gas mixture and components of a gas molecule.
- gas-sensitive field effect transistors are used for the detection of ammonia, which are permeable to hydrogen, for example.
- the permeability is generally ensured by thin and / or porous layers. The thickness of these layers is generally in the range of 1 to 100 nm.
- the execution of the porous layer as an electrically conductive film is particularly advantageous since it then, for example, as the gate electrode of the
- Semiconductor device can be used. However, it has been found that, in particular at high operating temperatures and in corrosive environments, such thin, gas-sensitive layers frequently lead to precipitation due to degradation. In this case, it has been shown that the degradation primarily takes place in the bridging of steps or edges and the connection with thicker films. However, such steps or edges are present on the semiconductor devices due to the successive deposition of various materials and typically have a height in the range of 10 nm to 1 ⁇ m.
- the connection of the thin layer with a thicker film usually serves to electrically contact the porous layer.
- a gas-sensitive field-effect transistor for detecting hydrocarbons is described, for example, in US Pat. No. 5,698,771.
- An inventively embodied electronic component comprises a conductor track structure on a substrate and a film that contacts the conductor track structure.
- the film has a smaller layer thickness than the conductor track structure.
- the conductor track structure has an area which is covered for contacting the film or lying thereon.
- the conductor track structure has a region which is covered for contacting the film or lying on it, a larger contact area is achieved.
- contacting takes place not only on a vertical surface on which two films abut each other.
- Stabilization of the thin film and its electrical contacting is achieved.
- a tear-off occurs by the fact that at high temperatures, such as are necessary for example, for gas sensors, and are generally in the range between 25 ° C and 800 0 C, different tempera - tensions occur.
- the choice of a suitable film material becomes more problematic.
- platinum is increasingly mobile from temperatures of about 500 0 C and tends to agglomeration or crystal formation. As a result, the surface coverage is inhomogeneous.
- the risk of demolition of the thin films is enhanced at steps or edges by the fact that necessary semiconductor processes do not permit isotropic deposition of the thin films.
- multiple semiconductor processes can only be matched to one another with a certain degree of inaccuracy.
- the inaccuracy results, for example, from the resolution of the lithography in the production. This prevents an exact adjustment of several layers to each other. Due to the electronic component according to the invention, in which the conductor track structure has a region which is covered for contacting the film, such a demolition is avoided, since not only vertical regions are connected to each other but also horizontally lying areas by the overlap. Even with a different temperature expansion of the materials of the different layers so the contact is made.
- a usual height for a printed conductor structure is in the range of 10 nm to 1 ⁇ m.
- Layer thickness has as a conductor track structure, usually has a layer thickness in the range of 1 to 100 nm.
- the layer thickness of the film is generally 2 to 1000 times smaller than the layer thickness of the conductor track structure.
- the area which is covered by the film in a further embodiment has a smaller layer thickness than the film.
- the covered area has a height in the range of 1 to 200 nm.
- the smaller layer thickness of the covered area than that of the film covering the area avoids the need to overcome a step in the application of the film which is at least equal to the thickness of the film.
- a continuous film that overcomes the step at the end of the covered area can be produced. The risk of demolition, for example, by different thermal expansions is avoided in this way.
- the region which is covered by the film adjoins another layer, wherein the covered region and the further layer have a substantially identical layer thickness.
- Film usually also covers the further layer which adjoins the area which is covered by the film.
- the substantially same layer thickness of the covered area and the further layer avoids the formation of a step which must be overcome by the film with a smaller layer thickness.
- the film can be trained.
- Such a substantially identical layer thickness can be produced, for example, by using a self-aligning process, as is known to the person skilled in the art. In particular when using self-aligning processes for producing the layers, it is possible to produce plane transitions, that is to say an identical layer thickness.
- the material from which the further layer is made for example, a semiconductor or insulator material.
- the material from which the further layer is made a suitable gate insulator for field effect transistors.
- Suitable insulator materials are, for example, SiO 2, SiON, Si 3 N 4, SiC, Al 2 O 3, or SiAION.
- the material of which the conductor track structure is made is preferably electrically conductive and can be applied in particular by suitable methods as a thin layer on the substrate.
- the application of the conductor track structure takes place, for example, by electron beam evaporation or metal sputtering. Method.
- an electrolytic or electroless deposition on the substrate is possible.
- this region is preferably produced by electron beam evaporation or metal sputtering processes.
- Suitable materials for the wiring pattern are, for example, selected from the group consisting of titanium, platinum, gold, aluminum, copper, chromium, nickel, tantalum and compounds and alloys of these elements.
- Conductor structure is preferably selected from the group consisting of titanium, platinum, gold, aluminum, copper, chromium, nickel, tantalum and compounds of these elements with oxygen, nitrogen, carbon, silicon and alloys of these elements.
- the advantage of using these elements is that they have good electrical conductivity.
- Oxide formation is low or can be minimized by forming an oxide layer on the surface. This avoids that the material of the conductor track structure or of the film by oxidation loses conductivity and thereby reduces the functionality of the electronic component or even completely lost.
- the electronic component is, for example, a gas-sensitive field-effect transistor.
- the thin film which covers the region on the conductor track structure serves, for example, as a gate electrode.
- the film is porous.
- the porosity achieves a permeability to individual constituents of a gas species to be detected.
- the thin film is electrically conductive and solid and a porous structure is applied to the film.
- the film is porous.
- the porous film contains a catalytically active substance, at which, for example, a gas to be detected is accelerated into its elements split.
- FIG. 2 shows a detail of an electronic component in a second embodiment.
- FIG. 1 shows a section through a section of an electronic component.
- An electronic component 1 comprises a substrate 3, to which a conductor track structure 5 is applied.
- the substrate 3 may be made of any material known to those skilled in the art. Usually, the substrate 3 is made of, for example, an electrically insulating material or a semiconductor material. The selection of the material for the substrate 3 is dependent on how the electronic component is to be used. Electrically insulating materials from which the substrate 3 may be made are, for example, sapphire or SiO 2.
- the substrate 3 is preferably made of a semiconductor material.
- semiconductor materials are, for example, semiconductor materials having a bandgap greater than 2 eV. Of these, GaN and SiC are particularly preferred.
- the conductor track structure 5 is usually made of a material with good electrical conductivity. Suitable materials for the conductor track structure 5 are for
- Example metals are preferably selected from Group consisting of titanium, platinum, gold, aluminum, copper, chromium, nickel, tantalum and their compounds and alloys.
- the application of the conductor track structure 5 can be effected by any method known to the person skilled in the art.
- the conductor track structure 5 can be deposited on the substrate 3 by electroless or galvanic methods.
- Other methods for producing the printed conductor structure 5 include, for example, electron beam evaporation or metal sputtering processes.
- the electronic component 1 furthermore comprises a thin film 7.
- the thin film 7 has a layer thickness h which is smaller than the height H of the printed conductor structure 5.
- the thin film 7 makes contact with the printed conductor structure 5 on the side surface 9 thereof.
- An electrical connection is thus ensured only by means of a narrow, vertical contact surface. This area results from the product of height h and width of the thin film 7.
- High temperatures at which the electronic component can be used for example and / or mechanical stresses can lead to a break at the transition area. This results in an interruption of the electrical contact.
- the conductor track structure 5 comprises a region 11, which is covered by the thin film 7.
- the conductor track structure 5 comprises a region 11, which is covered by the thin film 7.
- the thin film 7 preferably contains a catalytically active material.
- the layer thickness d of the covered area 11 is preferably smaller than the layer thickness h of the thin film 7.
- the maximum layer thickness d of the covered area 11 corresponds to the layer thickness h of the thin film 7.
- the layer thickness d of the covered area 11 is smaller than the layer thickness h of the thin film
- the production of the covered area 1 1 is carried out by any, the
- the covered region 1 1 of the conductor track structure 5 is produced by electron beam evaporation or a metal sputtering method, since a specific layer thickness d can be set by these methods and correspondingly thin films can be produced.
- the overlaid region 11 is applied after the production of the printed conductor structure 5 or simultaneously with the production of the printed conductor structure 5. In general, however, first the printed conductor structure 5 is produced and then the covered one
- the thin film 7 may be closed or porous.
- the thin film 7 is porous.
- the thin film 7 serves as a gate electrode of the field effect transistor.
- FIG. 1 An alternative embodiment of an electronic component designed according to the invention is shown in FIG. 1
- the embodiment of the electronic component 1 shown in Figure 2 differs from that shown in Figure 1 in that between the substrate 3 and the thin film 7, a further layer 15 is formed.
- the further layer 15 adjoins the covered area 11 of the printed conductor structure 5.
- the layer thickness of the further layer 15 corresponds to the layer thickness d of the covered region 11.
- the further layer 15 can be produced, for example, by a self-aligning process. As a result, an edge-free transition in the area in which the further layer 15 adjoins the covered area 11 is achieved.
- a self-adjusting process is, for example, the execution of various sequential process steps when using a single lithographic mask.
- the goal here is to avoid existing alignment accuracies of two lithography masks relative to each other. If the further layer 15 does not adjoin the interconnect structure 5, as is generally the case in the prior art, and results, for example, from inaccuracies of several lithography masks, this leads to steps which must be overcome by the thin film. With a layer thickness of the further layer 15 and the conductor track structure 5, which are larger than the thin film 7, the thin film 7 can tear off in the region of the steps. In addition, there is a contact only on the side surface 9 of the conductor track structure 5, resulting in only a small contacting region, which can also tear by different thermal expansions of the materials.
- the covered area 11 is generally first produced. Then, the wiring pattern 5 is deposited. Due to its property and function, this has an edge height of usually more than 10 nm, generally more than 100 nm. After the production of the conductor track structure, a full-surface deposition of the further layer 15 is generally carried out. This is then coated with the aid of usually negative photoresists in order to achieve suitable, negative edge profiles for subsequent processes. The masking is usually carried out with suitable exposure methods such as contact copy or stepper exposure. After the development of the photoresist mask, the areas exposed by the photoresist lying between the further layer 15 and the side surface 9 of the interconnect structure 5 are exposed.
- the lowermost photoresist layer after development undergoes a greater expansion than the overlying photoresist, resulting in a typical lift-off profile, which facilitates the subsequent process steps.
- a subsequent etching of the further layer 15 subsequent to the development thus takes place only at locations which are not covered by photoresist.
- the etching back is carried out with a dry chemical etching process, but can also be realized with suitable wet chemical methods. Such methods are known to the person skilled in the art.
- AIs material for the further layer are, for example, semiconductor materials or insulator materials. Suitable semiconductor materials are, for example, GaN or SiC, suitable insulator materials are, for example, SiO 2 or Si 3 N 4.
- An equal height of covered area 11 and further layer 15 can alternatively be achieved, for example, by chemo-mechanical polishing.
- the first deposited layer, generally the further layer 15, must be suitable as a polishing material and be patterned.
- the second layer, generally the covered region 11, is then deposited so as to overlap the first layer.
- the planarization of the layers is carried out by a chemo-mechanical polishing process known to those skilled in the art, which stops at the level of the first layer, generally the further layer 15. This creates a completely flat transition for the thin film 7.
- An electronic component 1 produced in this way is suitable, for example, as a semiconductor-based gas sensor, for example as a gas sensor for combustible gases, nitrogen oxides or oxygen-containing gas species.
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Biochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Molecular Biology (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102008043929A DE102008043929A1 (de) | 2008-11-20 | 2008-11-20 | Elektronisches Bauelement |
PCT/EP2009/065296 WO2010057879A1 (de) | 2008-11-20 | 2009-11-17 | Elektronisches bauelement |
Publications (1)
Publication Number | Publication Date |
---|---|
EP2359127A1 true EP2359127A1 (de) | 2011-08-24 |
Family
ID=41582162
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP09752374A Withdrawn EP2359127A1 (de) | 2008-11-20 | 2009-11-17 | Elektronisches bauelement |
Country Status (5)
Country | Link |
---|---|
US (1) | US8698319B2 (de) |
EP (1) | EP2359127A1 (de) |
CN (1) | CN102216764B (de) |
DE (1) | DE102008043929A1 (de) |
WO (1) | WO2010057879A1 (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102010055016A1 (de) * | 2010-12-17 | 2012-06-21 | Continental Automotive Gmbh | Hochtemperatursensor, insbesondere für Kraftfahrzeuge |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2273276B1 (de) * | 1974-05-27 | 1978-08-04 | Radiotechnique Compelec | |
FR2368802A1 (fr) * | 1976-10-19 | 1978-05-19 | Radiotechnique Compelec | Dispositif semiconducteur generateur de courant electrique |
FR2579826B1 (fr) * | 1985-03-26 | 1988-04-29 | Radiotechnique Compelec | Procede de realisation de contacts metalliques d'un transistor, et transistor ainsi obtenu |
US4922311A (en) * | 1987-12-04 | 1990-05-01 | American Telephone And Telegraph Company | Folded extended window field effect transistor |
US5702979A (en) * | 1994-05-31 | 1997-12-30 | Sgs-Thomson Microelectronics, Inc. | Method of forming a landing pad structure in an integrated circuit |
JP2658913B2 (ja) * | 1994-10-28 | 1997-09-30 | 日本電気株式会社 | 半導体装置およびその製造方法 |
US5698771A (en) | 1995-03-30 | 1997-12-16 | The United States Of America As Represented By The United States National Aeronautics And Space Administration | Varying potential silicon carbide gas sensor |
US6903433B1 (en) * | 2000-01-19 | 2005-06-07 | Adrena, Inc. | Chemical sensor using chemically induced electron-hole production at a schottky barrier |
US8154093B2 (en) * | 2002-01-16 | 2012-04-10 | Nanomix, Inc. | Nano-electronic sensors for chemical and biological analytes, including capacitance and bio-membrane devices |
JP2003232763A (ja) | 2002-02-08 | 2003-08-22 | Matsushita Electric Ind Co Ltd | ガスセンサとその製造方法 |
DE102005008051A1 (de) | 2005-02-22 | 2006-08-24 | Siemens Ag | Gassensor und Verfahren zu dessen Betrieb |
JP2006317155A (ja) | 2005-05-10 | 2006-11-24 | Ngk Spark Plug Co Ltd | ガスセンサおよびその製造方法 |
US7397072B2 (en) | 2005-12-01 | 2008-07-08 | Board Of Regents, The University Of Texas System | Structure for and method of using a four terminal hybrid silicon/organic field effect sensor device |
US8072076B2 (en) * | 2006-10-11 | 2011-12-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bond pad structures and integrated circuit chip having the same |
US8519446B2 (en) * | 2007-08-29 | 2013-08-27 | Applied Nanotech Holdings, Inc. | Etch resistant gas sensor |
WO2010022321A1 (en) * | 2008-08-21 | 2010-02-25 | Georgia Tech Research Corporation | Gas sensors, methods of preparation thereof, methods of selecting gas sensor materials, and methods of use of gas sensors |
DE102010001568A1 (de) * | 2010-02-04 | 2011-08-04 | Robert Bosch GmbH, 70469 | Elektronisches Bauteil für hohe Temperaturen |
-
2008
- 2008-11-20 DE DE102008043929A patent/DE102008043929A1/de not_active Withdrawn
-
2009
- 2009-11-17 CN CN200980146134.1A patent/CN102216764B/zh not_active Expired - Fee Related
- 2009-11-17 EP EP09752374A patent/EP2359127A1/de not_active Withdrawn
- 2009-11-17 WO PCT/EP2009/065296 patent/WO2010057879A1/de active Application Filing
- 2009-11-17 US US12/998,680 patent/US8698319B2/en not_active Expired - Fee Related
Non-Patent Citations (2)
Title |
---|
None * |
See also references of WO2010057879A1 * |
Also Published As
Publication number | Publication date |
---|---|
US20110272747A1 (en) | 2011-11-10 |
CN102216764A (zh) | 2011-10-12 |
DE102008043929A1 (de) | 2010-05-27 |
CN102216764B (zh) | 2014-06-04 |
WO2010057879A1 (de) | 2010-05-27 |
US8698319B2 (en) | 2014-04-15 |
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