EP2345062A4 - METHODS OF FORMING MULTIDOPED JUNCTIONS ON A SUBSTRATE - Google Patents

METHODS OF FORMING MULTIDOPED JUNCTIONS ON A SUBSTRATE

Info

Publication number
EP2345062A4
EP2345062A4 EP08877854A EP08877854A EP2345062A4 EP 2345062 A4 EP2345062 A4 EP 2345062A4 EP 08877854 A EP08877854 A EP 08877854A EP 08877854 A EP08877854 A EP 08877854A EP 2345062 A4 EP2345062 A4 EP 2345062A4
Authority
EP
European Patent Office
Prior art keywords
substrate
methods
forming multi
doped junctions
junctions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP08877854A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP2345062A1 (en
Inventor
Sunil Shah
Malcolm Abbott
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Innovalight Inc
Original Assignee
Innovalight Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Innovalight Inc filed Critical Innovalight Inc
Publication of EP2345062A1 publication Critical patent/EP2345062A1/en
Publication of EP2345062A4 publication Critical patent/EP2345062A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Photovoltaic Devices (AREA)
EP08877854A 2008-10-29 2008-10-29 METHODS OF FORMING MULTIDOPED JUNCTIONS ON A SUBSTRATE Withdrawn EP2345062A4 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2008/081558 WO2010050936A1 (en) 2008-10-29 2008-10-29 Methods of forming multi-doped junctions on a substrate

Publications (2)

Publication Number Publication Date
EP2345062A1 EP2345062A1 (en) 2011-07-20
EP2345062A4 true EP2345062A4 (en) 2012-06-13

Family

ID=42129093

Family Applications (1)

Application Number Title Priority Date Filing Date
EP08877854A Withdrawn EP2345062A4 (en) 2008-10-29 2008-10-29 METHODS OF FORMING MULTIDOPED JUNCTIONS ON A SUBSTRATE

Country Status (5)

Country Link
EP (1) EP2345062A4 (ko)
JP (1) JP2012507855A (ko)
KR (1) KR20110089291A (ko)
CN (1) CN102246275B (ko)
WO (1) WO2010050936A1 (ko)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5687837B2 (ja) 2007-02-16 2015-03-25 ナノグラム・コーポレイションＮａｎｏＧｒａｍ Ｃｏｒｐｏｒａｔｉｏｎ 太陽電池構造体、光起電モジュール及びこれらに対応する方法
US8658454B2 (en) * 2010-09-20 2014-02-25 Sunpower Corporation Method of fabricating a solar cell
JP2012234994A (ja) * 2011-05-02 2012-11-29 Teijin Ltd 半導体シリコン膜及び半導体デバイス、並びにそれらの製造方法
KR101411726B1 (ko) 2010-12-10 2014-06-26 데이진 가부시키가이샤 반도체 적층체, 반도체 디바이스, 및 그들의 제조 방법
JP5921088B2 (ja) * 2011-05-27 2016-05-24 帝人株式会社 未焼結シリコン粒子膜及び半導体シリコン膜、並びにそれらの製造方法
JP5253561B2 (ja) * 2011-02-04 2013-07-31 帝人株式会社 半導体デバイスの製造方法、半導体デバイス、並びに分散体
US8858843B2 (en) * 2010-12-14 2014-10-14 Innovalight, Inc. High fidelity doping paste and methods thereof
US8912083B2 (en) 2011-01-31 2014-12-16 Nanogram Corporation Silicon substrates with doped surface contacts formed from doped silicon inks and corresponding processes
JPWO2012132758A1 (ja) * 2011-03-28 2014-07-28 三洋電機株式会社 光電変換装置及び光電変換装置の製造方法
KR101890286B1 (ko) * 2012-07-13 2018-08-22 엘지전자 주식회사 양면형 태양 전지의 제조 방법
CN106409923A (zh) * 2012-08-09 2017-02-15 三菱电机株式会社 太阳能电池的制造方法
US9685581B2 (en) 2013-04-24 2017-06-20 Mitsubishi Electric Corporation Manufacturing method of solar cell
JP6379461B2 (ja) * 2013-09-02 2018-08-29 日立化成株式会社 ｐ型拡散層を有するシリコン基板の製造方法、太陽電池素子の製造方法及び太陽電池素子
JP6144778B2 (ja) * 2013-12-13 2017-06-07 信越化学工業株式会社 太陽電池の製造方法
JP6125114B2 (ja) * 2015-02-10 2017-05-10 三菱電機株式会社 太陽電池の製造方法
US9589802B1 (en) * 2015-12-22 2017-03-07 Varian Semuconductor Equipment Associates, Inc. Damage free enhancement of dopant diffusion into a substrate
CN114373808B (zh) * 2021-11-26 2023-11-10 江苏科来材料科技有限公司 一种高效晶硅电池

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003168807A (ja) * 2001-09-19 2003-06-13 Sharp Corp 太陽電池およびその製造方法およびその製造装置
US20060094189A1 (en) * 2003-01-08 2006-05-04 Thomas B. Haverstock, Haverstock & Owens Llp Nanoparticles and method for making the same
US7192873B1 (en) * 2004-11-25 2007-03-20 Samsung Electronics Co., Ltd. Method of manufacturing nano scale semiconductor device using nano particles
WO2008039757A2 (en) * 2006-09-28 2008-04-03 Innovalight, Inc. Semiconductor devices and methods from group iv nanoparticle materials

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1797584A4 (en) * 2004-06-08 2014-08-13 Sandisk Corp METHODS AND DEVICES FOR FORMING NANOSTRUCTURE MONOLAYERS AND DEVICES COMPRISING SUCH SINGLES
TW201341440A (zh) * 2004-06-08 2013-10-16 Sandisk Corp 奈米結構之沉積後包封：併入該包封體之組成物、裝置及系統
US7419887B1 (en) * 2004-07-26 2008-09-02 Quick Nathaniel R Laser assisted nano deposition
US7355238B2 (en) * 2004-12-06 2008-04-08 Asahi Glass Company, Limited Nonvolatile semiconductor memory device having nanoparticles for charge retention
JP4481869B2 (ja) * 2005-04-26 2010-06-16 信越半導体株式会社 太陽電池の製造方法及び太陽電池並びに半導体装置の製造方法
US7521340B2 (en) * 2006-12-07 2009-04-21 Innovalight, Inc. Methods for creating a densified group IV semiconductor nanoparticle thin film

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003168807A (ja) * 2001-09-19 2003-06-13 Sharp Corp 太陽電池およびその製造方法およびその製造装置
US20060094189A1 (en) * 2003-01-08 2006-05-04 Thomas B. Haverstock, Haverstock & Owens Llp Nanoparticles and method for making the same
US7192873B1 (en) * 2004-11-25 2007-03-20 Samsung Electronics Co., Ltd. Method of manufacturing nano scale semiconductor device using nano particles
WO2008039757A2 (en) * 2006-09-28 2008-04-03 Innovalight, Inc. Semiconductor devices and methods from group iv nanoparticle materials

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2010050936A1 *

Also Published As

Publication number Publication date
CN102246275B (zh) 2014-04-30
CN102246275A (zh) 2011-11-16
WO2010050936A1 (en) 2010-05-06
EP2345062A1 (en) 2011-07-20
JP2012507855A (ja) 2012-03-29
KR20110089291A (ko) 2011-08-05

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