EP2345062A4 - Methods of forming multi-doped junctions on a substrate - Google Patents
Methods of forming multi-doped junctions on a substrateInfo
- Publication number
- EP2345062A4 EP2345062A4 EP08877854A EP08877854A EP2345062A4 EP 2345062 A4 EP2345062 A4 EP 2345062A4 EP 08877854 A EP08877854 A EP 08877854A EP 08877854 A EP08877854 A EP 08877854A EP 2345062 A4 EP2345062 A4 EP 2345062A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- substrate
- methods
- forming multi
- doped junctions
- junctions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2008/081558 WO2010050936A1 (en) | 2008-10-29 | 2008-10-29 | Methods of forming multi-doped junctions on a substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2345062A1 EP2345062A1 (en) | 2011-07-20 |
EP2345062A4 true EP2345062A4 (en) | 2012-06-13 |
Family
ID=42129093
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP08877854A Withdrawn EP2345062A4 (en) | 2008-10-29 | 2008-10-29 | Methods of forming multi-doped junctions on a substrate |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP2345062A4 (en) |
JP (1) | JP2012507855A (en) |
KR (1) | KR20110089291A (en) |
CN (1) | CN102246275B (en) |
WO (1) | WO2010050936A1 (en) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2654089A3 (en) | 2007-02-16 | 2015-08-12 | Nanogram Corporation | Solar cell structures, photovoltaic modules and corresponding processes |
US8658454B2 (en) * | 2010-09-20 | 2014-02-25 | Sunpower Corporation | Method of fabricating a solar cell |
JP5921088B2 (en) * | 2011-05-27 | 2016-05-24 | 帝人株式会社 | Unsintered silicon particle film and semiconductor silicon film, and methods for producing them |
JP2012234994A (en) * | 2011-05-02 | 2012-11-29 | Teijin Ltd | Semiconductor silicon film and semiconductor device, and method for manufacturing them |
JP5253561B2 (en) * | 2011-02-04 | 2013-07-31 | 帝人株式会社 | Semiconductor device manufacturing method, semiconductor device, and dispersion |
TWI488321B (en) | 2010-12-10 | 2015-06-11 | Teijin Ltd | Semiconductor laminates, semiconductor devices, and the like |
US8858843B2 (en) * | 2010-12-14 | 2014-10-14 | Innovalight, Inc. | High fidelity doping paste and methods thereof |
US8912083B2 (en) | 2011-01-31 | 2014-12-16 | Nanogram Corporation | Silicon substrates with doped surface contacts formed from doped silicon inks and corresponding processes |
JPWO2012132758A1 (en) * | 2011-03-28 | 2014-07-28 | 三洋電機株式会社 | Photoelectric conversion device and method of manufacturing photoelectric conversion device |
KR101890286B1 (en) * | 2012-07-13 | 2018-08-22 | 엘지전자 주식회사 | Manufacturing method of bi-facial solar cell |
CN104521002B (en) * | 2012-08-09 | 2016-11-23 | 三菱电机株式会社 | The manufacture method of solaode |
US9685581B2 (en) | 2013-04-24 | 2017-06-20 | Mitsubishi Electric Corporation | Manufacturing method of solar cell |
JP6379461B2 (en) * | 2013-09-02 | 2018-08-29 | 日立化成株式会社 | Method for manufacturing silicon substrate having p-type diffusion layer, method for manufacturing solar cell element, and solar cell element |
WO2015087472A1 (en) * | 2013-12-13 | 2015-06-18 | 信越化学工業株式会社 | Production method for solar cells and solar cell obtained by said production method |
WO2016129372A1 (en) * | 2015-02-10 | 2016-08-18 | 三菱電機株式会社 | Method for manufacturing solar cell, and solar cell |
US9589802B1 (en) * | 2015-12-22 | 2017-03-07 | Varian Semuconductor Equipment Associates, Inc. | Damage free enhancement of dopant diffusion into a substrate |
CN114373808B (en) * | 2021-11-26 | 2023-11-10 | 江苏科来材料科技有限公司 | High-efficiency crystalline silicon battery |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003168807A (en) * | 2001-09-19 | 2003-06-13 | Sharp Corp | Solar battery, and method and device for manufacturing the same |
US20060094189A1 (en) * | 2003-01-08 | 2006-05-04 | Thomas B. Haverstock, Haverstock & Owens Llp | Nanoparticles and method for making the same |
US7192873B1 (en) * | 2004-11-25 | 2007-03-20 | Samsung Electronics Co., Ltd. | Method of manufacturing nano scale semiconductor device using nano particles |
WO2008039757A2 (en) * | 2006-09-28 | 2008-04-03 | Innovalight, Inc. | Semiconductor devices and methods from group iv nanoparticle materials |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201341440A (en) * | 2004-06-08 | 2013-10-16 | Sandisk Corp | Post-deposition encapsulation of nanostructures: compositions, devices and systems incorporating same |
AU2005253604B2 (en) * | 2004-06-08 | 2011-09-08 | Scandisk Corporation | Methods and devices for forming nanostructure monolayers and devices including such monolayers |
US7419887B1 (en) * | 2004-07-26 | 2008-09-02 | Quick Nathaniel R | Laser assisted nano deposition |
US7355238B2 (en) * | 2004-12-06 | 2008-04-08 | Asahi Glass Company, Limited | Nonvolatile semiconductor memory device having nanoparticles for charge retention |
JP4481869B2 (en) * | 2005-04-26 | 2010-06-16 | 信越半導体株式会社 | SOLAR CELL MANUFACTURING METHOD, SOLAR CELL, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
WO2008073763A2 (en) * | 2006-12-07 | 2008-06-19 | Innovalight, Inc. | Methods for creating a densified group iv semiconductor nanoparticle thin film |
-
2008
- 2008-10-29 WO PCT/US2008/081558 patent/WO2010050936A1/en active Application Filing
- 2008-10-29 JP JP2011534467A patent/JP2012507855A/en active Pending
- 2008-10-29 CN CN200880132247.1A patent/CN102246275B/en not_active Expired - Fee Related
- 2008-10-29 EP EP08877854A patent/EP2345062A4/en not_active Withdrawn
- 2008-10-29 KR KR1020117011822A patent/KR20110089291A/en not_active Application Discontinuation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003168807A (en) * | 2001-09-19 | 2003-06-13 | Sharp Corp | Solar battery, and method and device for manufacturing the same |
US20060094189A1 (en) * | 2003-01-08 | 2006-05-04 | Thomas B. Haverstock, Haverstock & Owens Llp | Nanoparticles and method for making the same |
US7192873B1 (en) * | 2004-11-25 | 2007-03-20 | Samsung Electronics Co., Ltd. | Method of manufacturing nano scale semiconductor device using nano particles |
WO2008039757A2 (en) * | 2006-09-28 | 2008-04-03 | Innovalight, Inc. | Semiconductor devices and methods from group iv nanoparticle materials |
Non-Patent Citations (1)
Title |
---|
See also references of WO2010050936A1 * |
Also Published As
Publication number | Publication date |
---|---|
EP2345062A1 (en) | 2011-07-20 |
KR20110089291A (en) | 2011-08-05 |
CN102246275A (en) | 2011-11-16 |
JP2012507855A (en) | 2012-03-29 |
WO2010050936A1 (en) | 2010-05-06 |
CN102246275B (en) | 2014-04-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
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17P | Request for examination filed |
Effective date: 20110502 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR |
|
AX | Request for extension of the european patent |
Extension state: AL BA MK RS |
|
DAX | Request for extension of the european patent (deleted) | ||
A4 | Supplementary search report drawn up and despatched |
Effective date: 20120515 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 31/18 20060101ALI20120509BHEP Ipc: H01L 31/04 20060101ALI20120509BHEP Ipc: H01L 21/225 20060101AFI20120509BHEP |
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GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
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INTG | Intention to grant announced |
Effective date: 20140212 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20140624 |