CN102246275B - 在基片上形成多掺杂结的方法 - Google Patents

在基片上形成多掺杂结的方法 Download PDF

Info

Publication number
CN102246275B
CN102246275B CN200880132247.1A CN200880132247A CN102246275B CN 102246275 B CN102246275 B CN 102246275B CN 200880132247 A CN200880132247 A CN 200880132247A CN 102246275 B CN102246275 B CN 102246275B
Authority
CN
China
Prior art keywords
substrate
diffusion
temperature
minutes
dopant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200880132247.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN102246275A (zh
Inventor
苏尼尔·沙阿
马尔科姆·阿博特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Innovalight Inc
Original Assignee
Innovalight Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Innovalight Inc filed Critical Innovalight Inc
Publication of CN102246275A publication Critical patent/CN102246275A/zh
Application granted granted Critical
Publication of CN102246275B publication Critical patent/CN102246275B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Photovoltaic Devices (AREA)
CN200880132247.1A 2008-10-29 2008-10-29 在基片上形成多掺杂结的方法 Expired - Fee Related CN102246275B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2008/081558 WO2010050936A1 (en) 2008-10-29 2008-10-29 Methods of forming multi-doped junctions on a substrate

Publications (2)

Publication Number Publication Date
CN102246275A CN102246275A (zh) 2011-11-16
CN102246275B true CN102246275B (zh) 2014-04-30

Family

ID=42129093

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200880132247.1A Expired - Fee Related CN102246275B (zh) 2008-10-29 2008-10-29 在基片上形成多掺杂结的方法

Country Status (5)

Country Link
EP (1) EP2345062A4 (ko)
JP (1) JP2012507855A (ko)
KR (1) KR20110089291A (ko)
CN (1) CN102246275B (ko)
WO (1) WO2010050936A1 (ko)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080202577A1 (en) 2007-02-16 2008-08-28 Henry Hieslmair Dynamic design of solar cell structures, photovoltaic modules and corresponding processes
US8658454B2 (en) * 2010-09-20 2014-02-25 Sunpower Corporation Method of fabricating a solar cell
JP2012234994A (ja) * 2011-05-02 2012-11-29 Teijin Ltd 半導体シリコン膜及び半導体デバイス、並びにそれらの製造方法
JP5253561B2 (ja) * 2011-02-04 2013-07-31 帝人株式会社 半導体デバイスの製造方法、半導体デバイス、並びに分散体
JP5921088B2 (ja) * 2011-05-27 2016-05-24 帝人株式会社 未焼結シリコン粒子膜及び半導体シリコン膜、並びにそれらの製造方法
KR101386271B1 (ko) 2010-12-10 2014-04-18 데이진 가부시키가이샤 반도체 적층체, 반도체 디바이스, 및 그들의 제조 방법
US8858843B2 (en) * 2010-12-14 2014-10-14 Innovalight, Inc. High fidelity doping paste and methods thereof
US8912083B2 (en) 2011-01-31 2014-12-16 Nanogram Corporation Silicon substrates with doped surface contacts formed from doped silicon inks and corresponding processes
JPWO2012132758A1 (ja) * 2011-03-28 2014-07-28 三洋電機株式会社 光電変換装置及び光電変換装置の製造方法
KR101890286B1 (ko) * 2012-07-13 2018-08-22 엘지전자 주식회사 양면형 태양 전지의 제조 방법
CN106409923A (zh) * 2012-08-09 2017-02-15 三菱电机株式会社 太阳能电池的制造方法
JP6282635B2 (ja) * 2013-04-24 2018-02-21 三菱電機株式会社 太陽電池の製造方法
JP6379461B2 (ja) * 2013-09-02 2018-08-29 日立化成株式会社 ｐ型拡散層を有するシリコン基板の製造方法、太陽電池素子の製造方法及び太陽電池素子
JP6144778B2 (ja) * 2013-12-13 2017-06-07 信越化学工業株式会社 太陽電池の製造方法
WO2016129372A1 (ja) * 2015-02-10 2016-08-18 三菱電機株式会社 太陽電池の製造方法および太陽電池
US9589802B1 (en) * 2015-12-22 2017-03-07 Varian Semuconductor Equipment Associates, Inc. Damage free enhancement of dopant diffusion into a substrate
CN114373808B (zh) * 2021-11-26 2023-11-10 江苏科来材料科技有限公司 一种高效晶硅电池

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7192873B1 (en) * 2004-11-25 2007-03-20 Samsung Electronics Co., Ltd. Method of manufacturing nano scale semiconductor device using nano particles
US7267875B2 (en) * 2004-06-08 2007-09-11 Nanosys, Inc. Post-deposition encapsulation of nanostructures: compositions, devices and systems incorporating same
US7355238B2 (en) * 2004-12-06 2008-04-08 Asahi Glass Company, Limited Nonvolatile semiconductor memory device having nanoparticles for charge retention
US7419887B1 (en) * 2004-07-26 2008-09-02 Quick Nathaniel R Laser assisted nano deposition

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003168807A (ja) * 2001-09-19 2003-06-13 Sharp Corp 太陽電池およびその製造方法およびその製造装置
US7078276B1 (en) * 2003-01-08 2006-07-18 Kovio, Inc. Nanoparticles and method for making the same
CN102064102B (zh) * 2004-06-08 2013-10-30 桑迪士克公司 形成单层纳米结构的方法和器件以及包含这种单层的器件
JP4481869B2 (ja) * 2005-04-26 2010-06-16 信越半導体株式会社 太陽電池の製造方法及び太陽電池並びに半導体装置の製造方法
US20080078441A1 (en) * 2006-09-28 2008-04-03 Dmitry Poplavskyy Semiconductor devices and methods from group iv nanoparticle materials
EP2089897A2 (en) * 2006-12-07 2009-08-19 Innovalight, Inc. Methods for creating a densified group iv semiconductor nanoparticle thin film

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7267875B2 (en) * 2004-06-08 2007-09-11 Nanosys, Inc. Post-deposition encapsulation of nanostructures: compositions, devices and systems incorporating same
US7419887B1 (en) * 2004-07-26 2008-09-02 Quick Nathaniel R Laser assisted nano deposition
US7192873B1 (en) * 2004-11-25 2007-03-20 Samsung Electronics Co., Ltd. Method of manufacturing nano scale semiconductor device using nano particles
US7355238B2 (en) * 2004-12-06 2008-04-08 Asahi Glass Company, Limited Nonvolatile semiconductor memory device having nanoparticles for charge retention

Also Published As

Publication number Publication date
EP2345062A1 (en) 2011-07-20
EP2345062A4 (en) 2012-06-13
WO2010050936A1 (en) 2010-05-06
CN102246275A (zh) 2011-11-16
JP2012507855A (ja) 2012-03-29
KR20110089291A (ko) 2011-08-05

Similar Documents

Publication Publication Date Title
CN102246275B (zh) 在基片上形成多掺杂结的方法
US7615393B1 (en) Methods of forming multi-doped junctions on a substrate
US9378957B2 (en) Silicon substrates with doped surface contacts formed from doped silicon based inks and corresponding processes
US7704866B2 (en) Methods for forming composite nanoparticle-metal metallization contacts on a substrate
US8394658B2 (en) Methods of using a silicon nanoparticle fluid to control in situ a set of dopant diffusion profiles
US20140151706A1 (en) Structures incorporating silicon nanoparticle inks, densified silicon materials from nanoparticle silicon deposits and corresponding methods
CN102782810B (zh) 形成低电阻硅金属触点的方法
CN106887384B (zh) 掺杂剂组合物、掺杂剂注入层和掺杂层的形成方法
KR20120093892A (ko) 박막 태양전지 제조용 실리콘 잉크, 이의 제조방법, 및 태양 전지 구조
US20110183504A1 (en) Methods of forming a dual-doped emitter on a substrate with an inline diffusion apparatus
Park et al. Optimization of controllable factors in the aluminum silicon eutectic paste and rear silicon nitride mono-passivation layer of PERC solar cells
JP2014072437A (ja) 半導体基板パッシベーション膜形成用組成物、パッシベーション膜付半導体基板及びその製造方法、並びに太陽電池素子及びその製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20140430

Termination date: 20141029

EXPY Termination of patent right or utility model