EP2312325A1 - Charakterisierungsverfahren und -struktur für eine Atomkraftmikroskopssonde - Google Patents

Charakterisierungsverfahren und -struktur für eine Atomkraftmikroskopssonde Download PDF

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Publication number
EP2312325A1
EP2312325A1 EP10187455A EP10187455A EP2312325A1 EP 2312325 A1 EP2312325 A1 EP 2312325A1 EP 10187455 A EP10187455 A EP 10187455A EP 10187455 A EP10187455 A EP 10187455A EP 2312325 A1 EP2312325 A1 EP 2312325A1
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EP
European Patent Office
Prior art keywords
tip
height
characterization
shape
flanks
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
EP10187455A
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English (en)
French (fr)
Inventor
Johann Foucher
Pascal Faurie
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of EP2312325A1 publication Critical patent/EP2312325A1/de
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q40/00—Calibration, e.g. of probes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q40/00—Calibration, e.g. of probes
    • G01Q40/02—Calibration standards and methods of fabrication thereof

Definitions

  • the present invention relates to a method of characterizing a point of atomic force microscopy and a characterization structure for the implementation of this method.
  • Atomic Force Microscopy is a scanning microscopy technique developed since the 1980s to achieve atomic resolution. In contrast to tunnel scanning microscopy, atomic force microscopy is not limited to image formation of conductive surfaces, making it particularly suitable for insulating and semiconductor materials, as well as biological nature. This technique has applications in many fields such as the microelectronics industry or biology.
  • the essential component of a conventional atomic force microscope is a probe constituted by a lever connected to a support end and provided at the opposite end with a point oriented towards the surface or object to be observed. The lever generally has a length of the order of a few tens or hundreds of micrometers, and the tip a radius of curvature of a few tens of nanometers.
  • Such a probe generally made of silicon, can be manufactured by conventional photolithographic techniques.
  • the tip of the probe When the tip of the probe is brought closer to a surface, it is influenced by attractive or repulsive forces of a chemical nature, Van der Waals, electrostatic and / or magnetic.
  • attractive or repulsive forces of a chemical nature, Van der Waals, electrostatic and / or magnetic.
  • electrostatic and / or magnetic By measuring these forces as the tip sweeps the surface of the object to be observed, it is possible to reconstruct an image of the object.
  • the measurement of the forces exerted between the tip and the object can be effected in different ways. According to the simplest and oldest technique (static AFM) it is limited to observe, including optical means, the deflection of the built-in lever supporting the tip.
  • These optical means typically comprise a laser diode which illuminates a reflecting surface of the lever at an oblique incidence and, a detector sensitive to the position of the reflected beam that it receives and therefore able to detect changes in beam orientation due to deflections of the lever.
  • a better sensitivity can still be obtained by vibrating this lever according to one of its own modes, and by observing the resonance frequency variations induced by the gradients of the forces (dynamic AFM). This vibration is obtained using a piezoelectric tube connected to the support.
  • the standard tips conventionally have conical shapes but it is understood that this type of tip only allows to explore reliefs without overhangs such as shapes in hills and valleys.
  • CD points Complex Dimension
  • the figure 1a represents by way of example the principle of exploring a relief 1 without overhang by a simple conical tip 2.
  • the figure 1b illustrates the difficulty of exploring a shape 3 with cavities or overhangs by this point 2 which can not touch the areas 4 below the overhangs.
  • the figure 1c represents the principle of the exploration of a relief with overhangs using a flared tip 5 CD complex shape (elephant flap shape flared end to touch the relief under the overhang). The structure of the tip 5 flared allows to explore complex reliefs with overhangs.
  • the problem is that of the complete characterization (shape and dimensions) of the tip used. This characterization step is fundamental for the accuracy and reproducibility of measurements.
  • the characterization of a complex-shaped CD tip for the characterization of three-dimensional objects is done with the aid of two distinct characterization structures made of silicon, one of which makes it possible to determine the overall diameter of the tip. the other to determine its shape.
  • the Figures 2a to 2d illustrate how to determine the overall diameter of a complex shaped flared tip.
  • This tip 10 of form complex has two projecting lateral tips 11 and 12 and is of generally circular or elliptical section.
  • the overall diameter of the tip 10 corresponds to the width L2 separating the two lateral points 11 and 12 projecting from one another; in other words, the overall diameter of the tip corresponds to the largest diameter of all the horizontal sections of the tip 10.
  • the first structure 13 for determining the diameter of the tip consists of a line 14 silicon having relatively smooth vertical flanks rising above a silicon surface.
  • the characterization structure 13 is also referred to by the acronym VPS ("Vertical Parallel Structure" in English).
  • the width L1 of the line 14 of this VPS structure having been previously calibrated, it will be used to determine the overall diameter of the tip. Indeed, knowing the dimension L1 of the line 14, if one scans (or scans) this structure 13 with the point 10 complex geometry, one obtains, after measurement, a line 17 whose virtual size L (cf. figure 2b ) is the sum of the width L1 of the line 14 and the actual width of the tip L2.
  • L virtual size
  • FIGs 3a to 3c illustrate the manner of determining, imaging and characterizing the left and right sides of a flared tip with a complex geometry and thus having access to the shape of this point in a quantitative manner with the aid of characteristic magnitudes of using a second characterization structure 18 represented in figure 3a .
  • the figure 3b represents respectively the right and left portions of two characterization structures 18 disposed next to each other and forming a cavity 21.
  • lFSR isolated Flared Silicon Ridge
  • the key step is therefore at the level of the realization of the two points of contact between the structure and the tip which allow the integral characterization of the geometry of the tip.
  • the edges 19 and 20 of the structures 18 are slightly upward and thinned to obtain radii with curvatures of less than 10 nm (cf. figure 3b ).
  • the points of contact between the tip 10 and the structure 18 can then be considered quasi-point.
  • the contour followed by the tip 10 in its displacement allows to go back to the shape of the tip (by deconvolution with the shape of the cavity and its overhangs).
  • the reconstruction of the shape of the tip is illustrated in figure 3c .
  • the reconstitution of the shape is done by determining a succession of coordinates (x i , z i ) of the contact points as and when displacements of the tip in the cavity 21, and it is the curve formed by this succession of coordinates which is the subject of the deconvolution.
  • the end 19 or 20 of the upward portion of the characterization structure 18 which allows the contact between the tip and the latter must be extremely thin so that the contact is as punctual as possible. Without this, the accuracy and reproducibility of the measure can not be of good quality.
  • contour sampling sampling should be sufficient (typically at least one point per nanometer) to ensure sufficient reconstitution accuracy.
  • the scanning mode (referred to by the term “scan” later), the most commonly used for the complex-shape flared AFM tip for measuring three-dimensional objects, is the Critical Dimension (CD) mode. or critical dimension mode.
  • the tip is controlled by a piezo-electric tube in the three directions of space and can oscillate horizontally and vertically.
  • the flared tip 10 can thus scan the plane and substantially horizontal surfaces 23 and 24 of the pattern 28 by oscillating vertically (double arrow 25) and scanning the substantially vertical flanks 26 and 27 of the same pattern 28 by oscillating horizontally (double arrow 29).
  • the feedback is on the amplitude of the lever of the tip.
  • the operating principle is the same for vertical and horizontal oscillation by observing the resonance frequency variations induced by the gradients of the forces experienced by the tip in contact with the surface.
  • the advantage of the CD mode is to scan the flanks of the patterns precisely through the horizontal oscillation.
  • CD mode has some disadvantages when trying to characterize very narrow trenches. Indeed, during the horizontal oscillation, the tip 10 can abut against the other side during the measurement of the first sidewall. Such contact of the tip on a flank facing the flank to be measured will of course disturb the measurement. This phenomenon is illustrated on the figure 5a which represents the profile of a series of narrow trenches (each having a width of about forty nanometers) measured in CD mode using a flared tip having a diameter of the order of one thirty nanometers.
  • a known solution to this problem is to use a scanning mode DT type ("Deep Trench" in English).
  • the tip whose resonance frequency is the same as in CD mode (typically around 30kHz), oscillates vertically only. As a result it can scan trenches narrower than the CD mode.
  • This phenomenon is illustrated on the figure 5b which represents the profile of a series of narrow trenches (each having a width of the order of forty nanometers) measured in DT mode using a flared tip having a diameter of the order of one thirty nanometers.
  • the flared tip 10 can thus scan the surfaces 23 and 24 planar and substantially horizontal pattern 28 by oscillating vertically (double arrow 31); on the other hand, it can not scan substantially vertical flanks 26 and 27 of the same pattern 28.
  • the scanning frequency is not fixed (versus the so-called “Tapping" in which one imposes a scanning frequency and which does not make it possible to obtain measurements as precise as the modes CD or DT). Only the sampling frequency is imposed. In other words, it is expected at each measurement that the tip returns to its undisturbed fundamental oscillation by the influence of the attractive or repulsive forces generated when approaching the surface.
  • the DT mode also presents some difficulties.
  • the major disadvantage lies in the fact that, without control of the horizontal oscillation of the tip, the flanks 26 and 27 at 90 ° can not be scanned.
  • the VPS characterization structure represented in figure 2a therefore can not be used.
  • the DT mode is used to make a measurement, the same mode must be used during the tip characterization in order to be consistent and not to generate a measurement offset between the tip characterization and the measurement. of a structure.
  • VPS characterization structure used in CD mode is obviously not suitable for standard tips conical or cylindrical tip type.
  • the present invention aims to provide a method of characterizing a point of atomic force microscopy to accurately characterize any type of tip AFM (flared complex shape, conical or cylindrical) DT mode.
  • An oscillating tip is only vertically an AFM tip operating in DT mode.
  • Convolution means integrating the dimension of the external envelope of the tip into the measurement carried out. Measurement incorporating convolution is therefore not a real measure of the size of the characterization structure.
  • the VPS characterization structure (vertical sidewall structure) is advantageously replaced by a sloping flank structure so that the tip, while oscillating vertically only, can scan the slope.
  • This inclined side characterization structure has at least one known width connecting the inclined sides for a given height (width and height obtained by calibration of the structure, for example by a calibration tip operating in CD mode).
  • This pair (width, height) of real dimensions is then used as well as the AFM measurement of the characterization structure carried out at the same given height to determine a characteristic dimension of the AFM tip; this characteristic dimension may typically be the overall diameter of the tip in the case of a flared tip (largest diameter of all horizontal sections of the tip), the diameter of the tip in the case of a cylindrical tip (diameter of the horizontal circular section) or the radius of curvature of the end of the tip in the case of a conical tip. In the case of an elliptical section, the diameter is replaced by the long axis of the ellipse.
  • the method according to the invention allows a very precise characterization, to some angstroms, AFM tips DT mode which allows to have a better accuracy of measurement when measuring a structure using this mode (it is indeed necessary deconvolute at least the diameter of the tip to obtain a fair measure).
  • the method according to the invention also makes it possible to characterize all types of tips: flared, cylindrical and conical tips whereas the characterizations known in CD mode only allow the characterization of the flared tips.
  • characterizing a tip in DT mode is a scan mode faster than CD mode. This therefore makes it possible to improve the performance of the measuring equipment in a context of industrial production.
  • said first element is made of a first material and said second element is made of a second material different from said first material so that said first and second materials are capable of being selectively etched relative to one another. to the other.
  • the structure according to the invention can be manufactured by involving conventional steps in microelectronics lithography and etching
  • the fact of using two highly selective materials with respect to each other during the etching steps, for the realization of the upper and lower parts of the structure according to the invention provides "sharp" angles on either side of the structure to have a finer characterization of the shape of the tips.
  • Said first material may be Si or SiGe.
  • the height of said second element is chosen so that it is greater than the height of the useful part of the tip to be characterized.
  • the angle ⁇ is chosen to be less than 90 ° - ⁇ 1 where ⁇ 1 is the opening angle of the cone.
  • the height of the portion with inclined flanks is chosen to be strictly greater than the radius of curvature of the tip to be examined.
  • the method according to the invention is a method for characterizing an AFM tip which may have different shapes (flared, conical or cylindrical shape); more specifically, as we mentioned earlier with reference to the state of the art, there is a measurement mode called DT ("Deep Trench") in atomic force microscopy particularly effective for measuring narrow trenches in reverse CD mode ("Critical Dimensions") for which the measuring tip oscillates both vertically and horizontally. In DT mode, the tip oscillates only vertically.
  • the purpose of the method according to the invention is to make it possible to effectively and rapidly characterize a measuring tip in DT mode (for memory, if the measurement is performed with a tip in DT mode, this same tip must have been characterized in DT mode so not to generate a measurement offset between the characterization of the tip and the measurement of a structure to be characterized).
  • the method according to the invention uses a characterization structure 200 as represented in FIG. figure 7 .
  • a characterization structure 200 as represented in FIG. figure 7 .
  • This structure 200 of substantially trapezoidal shape comprises a portion 201 provided with two flanks relatively smooth slopes 202 and 203 rising above a surface 204, the two inclined planes 202 and 203 facing each other.
  • inclined flanks 202 and 203 are meant two substantially smooth surfaces forming an angle ⁇ strictly between 0 and 90 ° with the horizontal surface 204 parallel to the (Oxy) plane.
  • the first step 101 of the method 100 will consist in determining a plurality of lateral dimensions (here three lateral dimensions CD1, CD2 and CD3) each corresponding to a height along the z axis of the structure 200 (here three heights h1, h2 and h3 corresponding respectively to the lateral dimensions CD1, CD2 and CD3).
  • pairs of data (CD1, h1), (CD2, h2) and (CD3, h3) can be determined by an AFM measurement in CD mode using a tip (not shown) flared at complex shape, called tip calibration, whose dimensions and shape are perfectly known.
  • This calibration tip is used very little in order to avoid its wear (and to maintain constant dimensions and shape) and to make it possible to determine very precisely the dimensions of the structure to be characterized.
  • the second step 102 of the method 100 consists of performing an AFM measurement of the structure 200 with a tip 205 to be characterized.
  • the tip 205 represented in figure 7 is a flared tip complex shape but the method according to the invention also applies to conical or cylindrical type tips (which is not the case of characterization structures according to the state of the art VPS type which do not allow to characterize conical or cylindrical points).
  • the tip 205 scans the surface of the structure 200 by oscillating only vertically (according to the arrow 206 oriented along the axis Oz).
  • a step 103 of the method 100 according to the invention at a given height h (for example h1), the width of the structure is measured; we then obtain the sum of the width of the structure CD1 and the diameter D of the tip (we speak of convolution of the tip 205 and the structure 200); at this value subtracts the actual width (here CD1) of the structure 200 obtained for the given height h1. We then deduce the diameter D of the tip 205. It is of course interesting to obtain several series of measurements at different data heights even if a single pair (CD1, h1) can be traced back to the diameter D of the tip.
  • a width CD1 situated at a high height, a width CD2 located at a median height and a width CD3 located at a low height can be chosen preferentially.
  • this point 205 the diameter D of which is known accurately to make a number of measurements of nanometric structures in DT mode.
  • this step of characterizing the diameter of the tip 205 will then be repeated. In this way, the wear in the time of the tip is checked in "real time”.
  • the Figures 7a and 7b represent the evolution of the diameter in nanometers of a point during measurements.
  • the objective is to show the relevance of the diameter obtained on an inclined structure in DT mode. So that this characterization also works in CD mode, we worked with a flared tip (can thus be both characterized on a vertical structure, which is not the case for a cylindrical or conical tip, and on an inclined structure according to the invention).
  • the method 100 according to the invention represented in figure 6 and illustrated with reference to the figure 7 allows to determine in DT mode the diameter of the tip to be characterized; as such, it does not make it possible to determine the shape of this point. At this stage, two solutions are possible.
  • the first solution is to use a standard IFSR 207 structure as shown in FIG. figure 8a (in addition to the structure 200 according to the invention) to determine the shape of the tip 205.
  • a second solution is to use a single structure 300 as illustrated in FIG. figure 8b to determine both the diameter and the shape of the flared tip 205.
  • the structure only 300 comprises a first element 301 substantially identical to the structure 200 of the Figures 7 and 8a and a second member 302 located below the first member 301 and having the form of a lFSR structure.
  • the set of first and second elements is deposited on a substrate 303. As already mentioned above, it is very important to obtain two point-like contact points for the edges 306 and 307 of the structure 302 to obtain the smallest radii of curvature possible.
  • FIGs 9a and 9b illustrate for this purpose the principle of realization of such a structure.
  • junctions between the first and second inclined sides 306 and 307 and the bottom base 305 form two parts 308 and 309 projecting with an opening angle ⁇ .
  • the second element 302 of height h2 located under the first element 301 and above the substrate 303 is formed by a wall (or line) of width d3 with vertical sides.
  • the width d3 of the second element 302 is smaller than the width of the lower base 305, said second 302 being substantially centered under the lower base so that the first element 301 covers on both sides of the second element 302 two zones 310 and 311 of width d2 without material (reentrant profile of structure 300).
  • the structure 300 will be made using two different materials A and B for the first element 301 (made using the material A) and the second element 302 (made using the material B).
  • Materials A and B are selected so that they can be etched very selectively with respect to one another during plasma etching steps.
  • the first element 301 used for determining the diameter of the tips to be characterized will be Si or SiGe.
  • the width d1 of the upper base 304 will be closely related to the width d2 of the reentrant zones 310 and 311. d1 will also be greater than the width d3 of the second element 302 (residual width of the structure 300 after lateral etching equivalent to d2) . Indeed, for reasons of mechanical strength, the width d3 will not be too much less than the width d2. Typically, the width d1 will be equal to 3 times the width d2 and d2 will be greater than half the diameter of the tip.
  • the width d1 may typically be equal to three times d2, ie 21 nm.
  • the height h1 of the first element 301 of the structure 300 will condition the quality of determining the diameter of the tips.
  • This height h1 must indeed be greater than the radius of curvature Rc points to be characterized so as to have sufficient points characteristic of the diameter of the tip on the sides of the structure.
  • Rc is of the order of 20 nm.
  • the angle is strictly less than 90 ° (typically between 80 ° and 85 °).
  • the angle ⁇ must be less than (90 ° - ⁇ 1) in order to maintain the contact of the sidewall 306 with the end of the tip 401.
  • the height h2 of the second element is preferably fixed relative to the useful height h3 of the tip to be characterized.
  • the objective of the reentrant zones 310 and 311 of the structure 300 is to characterize the shape of the tip and therefore, inter alia, its useful length h3.
  • the height h2 is less than the useful length h3 of the tip (here a conical tip 501)
  • the height h2 of the structure is greater than the useful length h3, which makes it possible to characterize this length and therefore the follow-up of the wear over time of this length.
  • the figure 12 illustrates how to reconstitute the shape of a conical tip 401 and therefore the possibility of knowing its radius of curvature Rc with a structure 300 according to the invention.
  • the point of contact 308 between the conical tip 401 and the structure 300 can be considered as point.
  • the contour followed by the tip 401 in its displacement makes it possible to go back to the shape of the tapered tip 401.
  • p ' i i varying from 1 to 3 on the example of the figure 12
  • p ' i i varying from 1 to 3 on the example of the figure 12
  • the reconstruction of the shape is therefore done by determining a succession of coordinates (x i , z i ) of the contact points as the movements of the conical tip 401 to the contact point 308. Once the curve 402 obtained, one can easily determine the radius of curvature Rc of the conical tip 401.
  • the structure 300 according to the invention can be obtained from conventional steps of lithography and plasma etching which are involved in the semiconductor industry.
  • the figure 13 schematically illustrates the various steps of an exemplary method for producing such a structure 300. It is typically the substrate 303 on which it comes to achieve the deposition of a layer 313 of the material B and the deposition of a layer 314 of material A.
  • a photolithography step is then carried out using a mask 312 so as to obtain a pattern of material A.
  • Anisotropic etching is then carried out of the material A (selective with respect to the material B) with controlled slopes so as to obtain the first trapezoidal element 301 and then an isotropic etching of the material B (selective with respect to the material A) so as to obtain the second element 302 having the shape of a structure lFSR.

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
  • A Measuring Device Byusing Mechanical Method (AREA)
EP10187455A 2009-10-19 2010-10-13 Charakterisierungsverfahren und -struktur für eine Atomkraftmikroskopssonde Withdrawn EP2312325A1 (de)

Applications Claiming Priority (1)

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FR0957299A FR2951550B1 (fr) 2009-10-19 2009-10-19 Procede et structure de caracterisation d'une pointe de microscopie a force atomique

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EP2312325A1 true EP2312325A1 (de) 2011-04-20

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EP (1) EP2312325A1 (de)
JP (1) JP5770448B2 (de)
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KR101607606B1 (ko) * 2015-08-17 2016-03-31 한국표준과학연구원 원자간력 현미경의 측정 방법
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CN114236181A (zh) * 2021-12-02 2022-03-25 中国电子科技集团公司第十三研究所 Afm探针测量方法、装置、控制设备及存储介质
CN114236181B (zh) * 2021-12-02 2023-10-20 中国电子科技集团公司第十三研究所 Afm探针测量方法、装置、控制设备及存储介质

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US20110093990A1 (en) 2011-04-21
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