EP2304815A1 - Metallhaltige zusammensetzung, verfahren zur herstellung von elektrischen kontaktstrukturen auf elektronischen bauteilen sowie elektronisches bauteil - Google Patents
Metallhaltige zusammensetzung, verfahren zur herstellung von elektrischen kontaktstrukturen auf elektronischen bauteilen sowie elektronisches bauteilInfo
- Publication number
- EP2304815A1 EP2304815A1 EP09776983A EP09776983A EP2304815A1 EP 2304815 A1 EP2304815 A1 EP 2304815A1 EP 09776983 A EP09776983 A EP 09776983A EP 09776983 A EP09776983 A EP 09776983A EP 2304815 A1 EP2304815 A1 EP 2304815A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- metal
- composition
- group
- composition according
- silver
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 71
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 55
- 239000002184 metal Substances 0.000 title claims abstract description 55
- 238000000034 method Methods 0.000 title claims abstract description 18
- 230000008569 process Effects 0.000 title abstract description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 41
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 39
- 229910052709 silver Inorganic materials 0.000 claims description 38
- 239000004332 silver Substances 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 30
- 239000011521 glass Substances 0.000 claims description 24
- 229910044991 metal oxide Inorganic materials 0.000 claims description 14
- 239000002245 particle Substances 0.000 claims description 14
- 238000007639 printing Methods 0.000 claims description 14
- 238000002844 melting Methods 0.000 claims description 13
- 150000004706 metal oxides Chemical class 0.000 claims description 12
- 229910052797 bismuth Inorganic materials 0.000 claims description 11
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 11
- 150000002902 organometallic compounds Chemical class 0.000 claims description 11
- 150000003839 salts Chemical class 0.000 claims description 10
- 238000007650 screen-printing Methods 0.000 claims description 10
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 9
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 9
- 238000000354 decomposition reaction Methods 0.000 claims description 9
- 239000005355 lead glass Substances 0.000 claims description 9
- 239000000443 aerosol Substances 0.000 claims description 8
- 239000000919 ceramic Substances 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 8
- 150000002739 metals Chemical class 0.000 claims description 8
- 125000002524 organometallic group Chemical group 0.000 claims description 8
- 235000014113 dietary fatty acids Nutrition 0.000 claims description 7
- 239000000194 fatty acid Substances 0.000 claims description 7
- 229930195729 fatty acid Natural products 0.000 claims description 7
- 150000004665 fatty acids Chemical class 0.000 claims description 7
- 239000000843 powder Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 6
- MXODCLTZTIFYDV-UHFFFAOYSA-L zinc;1,4a-dimethyl-7-propan-2-yl-2,3,4,4b,5,6,10,10a-octahydrophenanthrene-1-carboxylate Chemical compound [Zn+2].C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C([O-])=O.C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C([O-])=O MXODCLTZTIFYDV-UHFFFAOYSA-L 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 5
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 5
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 5
- 230000002378 acidificating effect Effects 0.000 claims description 4
- NSPSPMKCKIPQBH-UHFFFAOYSA-K bismuth;7,7-dimethyloctanoate Chemical compound [Bi+3].CC(C)(C)CCCCCC([O-])=O.CC(C)(C)CCCCCC([O-])=O.CC(C)(C)CCCCCC([O-])=O NSPSPMKCKIPQBH-UHFFFAOYSA-K 0.000 claims description 4
- 238000007649 pad printing Methods 0.000 claims description 4
- 239000004912 1,5-cyclooctadiene Substances 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- NUMHJBONQMZPBW-UHFFFAOYSA-K bis(2-ethylhexanoyloxy)bismuthanyl 2-ethylhexanoate Chemical compound [Bi+3].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O NUMHJBONQMZPBW-UHFFFAOYSA-K 0.000 claims description 3
- 238000007641 inkjet printing Methods 0.000 claims description 3
- -1 metal oxides metals organometallic compounds Chemical class 0.000 claims description 3
- VNTDZUDTQCZFKN-UHFFFAOYSA-L zinc 2,2-dimethyloctanoate Chemical compound [Zn++].CCCCCCC(C)(C)C([O-])=O.CCCCCCC(C)(C)C([O-])=O VNTDZUDTQCZFKN-UHFFFAOYSA-L 0.000 claims description 3
- VYXHVRARDIDEHS-UHFFFAOYSA-N 1,5-cyclooctadiene Chemical compound C1CC=CCCC=C1 VYXHVRARDIDEHS-UHFFFAOYSA-N 0.000 claims description 2
- 239000001856 Ethyl cellulose Substances 0.000 claims description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 2
- 239000011230 binding agent Substances 0.000 claims description 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(III) oxide Inorganic materials O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims description 2
- 238000009835 boiling Methods 0.000 claims description 2
- 150000001733 carboxylic acid esters Chemical class 0.000 claims description 2
- 229920001577 copolymer Polymers 0.000 claims description 2
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 2
- 239000002270 dispersing agent Substances 0.000 claims description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 2
- 229920001249 ethyl cellulose Polymers 0.000 claims description 2
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 2
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 2
- 239000000049 pigment Substances 0.000 claims description 2
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 claims 1
- 229920001400 block copolymer Polymers 0.000 claims 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 claims 1
- 229940116411 terpineol Drugs 0.000 claims 1
- 239000000976 ink Substances 0.000 description 22
- 239000011787 zinc oxide Substances 0.000 description 19
- 239000004065 semiconductor Substances 0.000 description 9
- 238000009736 wetting Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000010304 firing Methods 0.000 description 4
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910000416 bismuth oxide Inorganic materials 0.000 description 3
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000000518 rheometry Methods 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- LFOXXKXKYHIANI-UHFFFAOYSA-L zinc;7,7-dimethyloctanoate Chemical class [Zn+2].CC(C)(C)CCCCCC([O-])=O.CC(C)(C)CCCCCC([O-])=O LFOXXKXKYHIANI-UHFFFAOYSA-L 0.000 description 2
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010017 direct printing Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000000156 glass melt Substances 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000000120 microwave digestion Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- RQZVTOHLJOBKCW-UHFFFAOYSA-M silver;7,7-dimethyloctanoate Chemical compound [Ag+].CC(C)(C)CCCCCC([O-])=O RQZVTOHLJOBKCW-UHFFFAOYSA-M 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- Metal-containing composition process for the production of electrical contact structures on electronic components and electronic component
- the present invention relates to a metal-containing composition, a method for producing electrical contact structures on electronic components and an electronic component provided with such a contacting.
- Silicon solar cells usually have metallic contacts both on the front side and on the rear side. Especially the contacts on the front have to fulfill several tasks and therefore make high demands on the contacting method and also on the contact material system.
- InkJet printing aerosol printing, pad printing or fine line screen printing can be realized.
- a metal layer is applied which is optimized to have a very good electrical conductivity and, in turn, to be readily contactable.
- the glass frit melts and wets the antireflection layer
- temperatures of about 750 0 C penetrates the glass melt in which at this temperature also silver is dissolved, the anti-reflective layer and penetrates further into the silicon
- the dissolved silver is precipitated from the melt and crystallizes directly on the silicon surface in the form of small silver crystallites.
- the cooled glass forms an insulating barrier between the volume silver of the finger and the silver crystallites, which in some places is thin enough is so that a current can flow from the cell into the contacts.
- This second metal layer can be realized, for example, by galvanic reinforcement of the first layer or by printing further, particularly good conductive metal layers on the first contact layer.
- Silver about 2 to 5 wt .-% of a glass frit and from 20 to 40 wt .-% of an organic vehicle system, via which the rheology of the ink / paste is set.
- the contacts insofar as they are realized in a single printing step, e.g. Screen printing, typically have a coating height of about 15 microns and a width of 120 microns. This means that in this case a much larger contact surface is available and therefore the requirements for the contact properties of the paste can be lower. In addition, it is known that the specific contact properties deteriorate with reduced metal layer height.
- compositions for making contacts by firing are known from various references, eg US 6,036,889, US 2004/0151893, US 2006/0102228, US 4,153,907 and US 6,814,795. All known formulations have an increased contact became common when thin contact structures were used on low-doped emitters.
- compositions according to the invention contain:
- the composition according to the invention is, for example, a combination of silver and glass or low-melting oxide and a "pure" refractory oxide, thus a combination of silver and oxides, the proportion of oxide being comparatively high and the silver content being comparatively low Oxides and silver may also be known to the art MOD (organometallic decomposition materials). It is particularly advantageous in this case that a material system with a reduced proportion of silver also means a reduction in the cost of production. Moreover, it is possible for the first time with the present invention to contact solar cells with a high-impedance emitter and thus a high efficiency potential, with narrow, low-resistance contacts.
- contact widths of at least 80 microns are necessary to contact emitters with a sheet resistance> 100 ohms / square low impedance p c ⁇ 10 mOhmcm 2 .
- emitters> 100 ohms / square with contacts ⁇ 20 microns with a specific contact resistance p c ⁇ 2 mOhmcm 2 are contacted.
- a high efficiency potential eg 20.3% with a layer resistance of 110 ⁇ / square on a 2x2 cm 2 cell, to contact cost reduced.
- composition additionally at least one organic component d), selected from the group consisting of
- solvents preferably solvents having a boiling point> 100 0 C; in particular solvent selected from the group consisting of terpine oil, ethylene glycol ether, glycol ether, Diethy- lenglykolmonobutylether, N-methylpyrrolidone, ethylene glycol and / or mixtures thereof, bb) binders, in particular ethyl cellulose and / or cc) dispersants selected from the group consisting of hydroxyfunctional carboxylic acid esters having pigment affinic groups, copolymers having acidic groups, alkylolammonium salts of Block Copolytneren with acidic groups and / or mixtures or solutions thereof.
- the electrically conductive metal according to feature a) of claim 1 is selected from the group consisting of metals having an electrical conductivity of at least 40 "10 6 S / m, preferably at least 55" 10 6 S / m, in particular Is silver and / or the at least one organometallic compound of the conductive metal is selected from the group consisting of organometallic decomposition materials (MOD), preferably from metal salts of fatty acids, in particular metal resminates, more preferably from silver nitrate, silver nucleodecanoate and / or silver (hexafluoro-) acetylacetonate) (1, 5-cyclooctadiene) and mixtures thereof.
- MOD organometallic decomposition materials
- the first oxidic material b) is preferably selected from the group consisting of glass frits, preferably lead glass and / or bismuth glass frits; Lead II oxide; Bismuth trioxide and / or the organometallic compounds derived from the metals contained in the first oxidic compound are selected from the group consisting of organometallic decomposition materials (MOD), preferably from metal salts of fatty acids, in particular metal resinates, particularly preferably bismuth resinate, bismuth neodecanoate, bismuth 2-ethylhexanoate and mixtures thereof.
- MOD organometallic decomposition materials
- the second oxidic material c) is selected from the group consisting of ZnO, ZnO: Al, SnO, TiO, TiO 2 , MgO and / or those of the organometallic compounds derived from the metals contained in the second oxidic compound are selected from the group consisting of organometallic decomposition materials (MOD), preferably from metal salts of fatty acids, in particular metal resinates, more preferably zinc resinate and / or zinc neodecanoate and mixtures thereof.
- MOD organometallic decomposition materials
- the source of the abovementioned oxides or conductive metals can therefore also be organometallic compounds or metal salts, which are generally known by the term metallo organic decompositions (MOD).
- MOD metallo organic decompositions
- Metal salts of fatty acids often referred to as resinates, such as silver neodecanoate, Ag (hfa) (COD), bismuth 2-ethylhexanoate, bismuth neodecanoate, zinc neodecanoate are particularly suitable.
- Particularly advantageous in this case is the combination with a further resinate, which burns to a metal oxide, which has a melting point above 1000 0 C, such as zinc resinates, such as zinc neodecanoates.
- zinc oxide as an oxide powder or as a zinc resinate, enhances the formation of silver crystallites, which are responsible for the electrical contact during contact formation on solar cells.
- Crystal density a measure of contact quality, is significantly increased in the presence of ZnO in the contact material system.
- the low-melting or high-melting oxides a) and b) may be used as glass, i. may be present as an oxide mixture or as a respective fine oxide as coating around a silver particle.
- Blends of resinates and powders are conceivable in all combinations. Particularly promising is the combination of silver powder with resinates (bismuth resinate, zinc resinate) to produce a contact ink or paste.
- Component d) in an amount of 0 to 50% by weight, preferably between 10 and 40% by weight, more preferably between 20 and 30% by weight.
- composition according to the invention can be present in various ready-to-use formulations.
- the composition is in the form of an inkjet ink or aerosol ink, which is characterized by a viscosity ⁇ ⁇ 1000 mPas, preferably ⁇ ⁇ 100 mPas.
- the composition is in the form of a paste to be applied, for example by screen printing, wherein the paste is characterized by a viscosity 10 Pas ⁇ ⁇ 300 Pas.
- the viscosities can be varied or adjusted, for example, by adding a suitable organic substance d) according to general principles known to those skilled in the art, for example with regard to the choice of the substance or its amount or a mixture of substances and thus adapted to the particular application.
- the at least one electrically conductive metal a), the at least one oxidic material b) and / or the at least one oxidic material c) are each independently of one another as particles or powders before, wherein the average particle sizes d 50 are each independently between 1 nm and 10 microns.
- a d 50 ⁇ 200 nm is necessary for inkjet inks, preferably ⁇ 100 nm, for aerosol applications a d 50 ⁇ 1 ⁇ m and for screen printing, in particular fine line screen printing, a d 50 ⁇ 10 ⁇ m , particularly preferably d 50 ⁇ 5 microns, is particularly suitable.
- the composition according to the invention is free of particles. This is the case in particular if components a) to c) only contain the abovementioned MODs ' (organometallic decomposition materials) include. This embodiment is particularly suitable for low-viscosity compositions and offers particular advantages when structurally very fine, ie narrow, contact structures are to be produced.
- compositions according to the invention contain both particle-free and particle-containing constituents a) to c) in combination with one another.
- methods for producing an electrical contact structure on an electronic component are also specified, in which a) a composition as described above is applied to the electronic component in a mold representing the contact structure to be produced and b) the component provided with the composition is in a contact firing step a temperature between 400 and 900 0 C is heated.
- the composition is already applied to the component in a form which reflects the final contact structure, that is to say in the form of strip conductors, for example.
- the preparation is to take place in larger conductive surfaces, a corresponding surface application of the composition is possible. In doing so, the
- composition according to the invention is preferably applied by screen printing, aerosol printing, inkjet printing, pad printing, stencil printing, dispensing and / or combinations thereof.
- Advantageous temperature ranges of the heating step b) are between 700 and 850 ° C.
- the invention likewise provides an electronic component, in particular a solar cell, having an electrical contact structure, wherein the electronic component has an electrical contact structure which can be produced by the method according to the invention.
- compositions provided according to the invention are made up together
- a conductive metal especially silver
- a glass system preferably lead glass or bismuth glass, which is also covered by a well-wetted metal oxide, lead oxide (PbO) or bismuth oxide
- ZnO melting point mp 1 800 0 C.
- ZnO Al (mp 1800 0 C.)
- SnO mp 1127 0 C.
- TiO 2 m.p. 1830 0 C
- MgO mp 2800 0 C.
- ZnO melting point mp 1 800 0 C.
- ZnO Al
- SnO mp 1127 0 C.
- TiO 2 m.p. 1830 0 C
- MgO mp 2800 0 C.
- ZnO melting point mp 1 800 0 C.
- ZnO Al
- SnO mp 1127 0 C.
- TiO 2 m.p. 1830 0 C
- MgO mp 2800 0 C.
- ZnO melting point mp 1 800 0 C.
- ZnO Al
- SnO mp 1127 0 C.
- TiO 2 m.p. 1830 0 C
- MgO mp 2800 0 C.
- these oxides significantly improve both the mechanical stability and the electrical metal-semiconductor transition.
- silver such a material system is very well suited as a seed layer.
- the high melting point causes the oxides in the
- the electrical contact improves significantly, especially when using ZnO or
- ZnOrAl Both ZnO, heated above 430 ° C, and the aluminum doped zinc oxide have high electrical conductivity, which allows the current to flow better through the glass layer. Another conceivable current path leads from the silver crystallite via a conductive oxide particle to the contact silver. Owing to the property that ZnO is an n-type semiconductor, it is possible to also contact high-resistance emitters (> 70 ohms / square) with a contact compound / paste containing this oxide in a low-resistance manner. The oxides used, in particular ZnO, also promote the growth of the silver crystallites and thus their density, which are crucial for the contact formation.
- pastes or inks are produced with significantly better contact properties and tested on silicon solar cells.
- very thin contact lines (30 ⁇ m)
- very good electrical parameters could be achieved on solar cells with high-ohmic emitters (contact resistance, filling factor and efficiency of the cells).
- the newly developed printing ink can be used as a seed layer, e.g. be applied to the solar cell in an aerosol printing process, inkjet process, fine-line screen printing process or pad printing process.
- the viscosity is ⁇ > 1 Pas
- the viscosity should be ⁇ ⁇ 1 Pas and at one InkJet ink, it is necessary to reduce the viscosity to ⁇ ⁇ 100 mPas.
- the proportion of an additional metal oxide may be, for example, varies greatly ZnO and varied in a range of 3 wt .-% to 70 wt
- the proportion of the wetting glass frit, lead glass frit or bismuth frit or the wetting metal oxides, PbO, Bi 2 O 3 The proportion is preferably from 2 to 3% by weight.
- the proportion of metal oxide varies, the proportion of conductive metal (silver) is changed and moves in the range between 1% by weight and 10% by weight 30% by weight and 70% by weight.
- Seed layer ink / paste with high oxide content Seed layer ink / paste with high oxide content:
- Seed layer ink / paste in which the oxides are present as resinates and only silver in particle form is
- Zinc resinate Zinc neodecanoates
- Bismuth resinate bismuth neodecanoate
- conductive, high-melting oxides such as zinc oxide in combination with a well-wetted, low-melting oxide, such as bismuth oxide, or a well-wetting glass frit, such as lead glass frit or Bismutglasfritte
- high-emitter R sh > 70 ohms / square
- the proportion of zinc oxide can be increased up to 35 wt .-%, wherein the proportion of silver is greatly reduced.
- FIG. 1 The structure of an electronic component which can be produced by the method according to the invention using the composition according to the invention, as in the present case a coated solar cell, is shown in FIG.
- a semiconductor device e.g. out
- a conductive metal layer 7 for example made of silver or copper, is applied.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Sustainable Energy (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Sustainable Development (AREA)
- Dispersion Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Conductive Materials (AREA)
- Inks, Pencil-Leads, Or Crayons (AREA)
- Electrodes Of Semiconductors (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102008032554A DE102008032554A1 (de) | 2008-07-10 | 2008-07-10 | Metallhaltige Zusammensetzung, Verfahren zur Herstellung von elektrischen Kontaktstrukturen auf elektronischen Bauteilen sowie elektronisches Bauteil |
PCT/EP2009/004877 WO2010003619A1 (de) | 2008-07-10 | 2009-07-06 | Metallhaltige zusammensetzung, verfahren zur herstellung von elektrischen kontaktstrukturen auf elektronischen bauteilen sowie elektronisches bauteil |
Publications (1)
Publication Number | Publication Date |
---|---|
EP2304815A1 true EP2304815A1 (de) | 2011-04-06 |
Family
ID=41112474
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP09776983A Withdrawn EP2304815A1 (de) | 2008-07-10 | 2009-07-06 | Metallhaltige zusammensetzung, verfahren zur herstellung von elektrischen kontaktstrukturen auf elektronischen bauteilen sowie elektronisches bauteil |
Country Status (11)
Country | Link |
---|---|
US (1) | US20110186121A1 (de) |
EP (1) | EP2304815A1 (de) |
JP (1) | JP2011527490A (de) |
KR (1) | KR20110026486A (de) |
CN (1) | CN102084502A (de) |
BR (1) | BRPI0915437A2 (de) |
CA (1) | CA2729870A1 (de) |
DE (1) | DE102008032554A1 (de) |
IL (1) | IL210241A0 (de) |
RU (1) | RU2010154190A (de) |
WO (1) | WO2010003619A1 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102011016034A1 (de) | 2011-04-04 | 2012-10-04 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Metallhaltige Zusammensetzung, Verfahren zur Herstellung einer elektrischen Kontaktstruktur sowie Verwendung eines Oxidationsmittels |
JP5853541B2 (ja) * | 2011-04-25 | 2016-02-09 | 横浜ゴム株式会社 | 太陽電池集電電極形成用導電性組成物および太陽電池セル |
WO2012153553A1 (ja) * | 2011-05-12 | 2012-11-15 | 横浜ゴム株式会社 | 太陽電池集電電極形成用導電性組成物および太陽電池セル |
JP2012243865A (ja) * | 2011-05-17 | 2012-12-10 | Yokohama Rubber Co Ltd:The | 太陽電池集電電極形成用導電性組成物および太陽電池セル |
JP2012238754A (ja) * | 2011-05-12 | 2012-12-06 | Yokohama Rubber Co Ltd:The | 太陽電池集電電極形成用導電性組成物および太陽電池セル |
KR20130044847A (ko) | 2011-10-25 | 2013-05-03 | 엘지이노텍 주식회사 | 인쇄용 페이스트 조성물 및 터치패널 |
JP6246135B2 (ja) * | 2012-01-18 | 2017-12-13 | ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー | 有機亜鉛化合物を含有する太陽電池の金属化 |
JP6082187B2 (ja) * | 2012-04-06 | 2017-02-15 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | 金属コンタクトを形成する改良された方法 |
US20140186596A1 (en) * | 2012-12-28 | 2014-07-03 | Dip-Tech Ltd. | Ink |
FR3008103B1 (fr) * | 2013-07-03 | 2015-09-11 | Genes Ink Sas | Composition d encre a base de nanoparticules |
CN103745763B (zh) * | 2014-01-21 | 2016-04-27 | 江苏欧耐尔新型材料有限公司 | 太阳能电池背面电极浆料及其制备方法 |
KR20170132837A (ko) | 2015-03-27 | 2017-12-04 | 헤레우스 도이칠란트 게엠베하 운트 코. 카게 | 산화물 첨가제를 포함하는 전기-전도성 페이스트 |
US10056508B2 (en) * | 2015-03-27 | 2018-08-21 | Heraeus Deutschland GmbH & Co. KG | Electro-conductive pastes comprising a metal compound |
GB201520077D0 (en) | 2015-11-13 | 2015-12-30 | Johnson Matthey Plc | Conductive track or coating |
DE102021207924A1 (de) * | 2021-07-23 | 2023-01-26 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein | Verfahren zur Überwachung und/oder Kalibrierung einer Einrichtung, die zur dreidimensionalen röntgenoptischen Überprüfung von Keimlingen in ver-schiedenen Wachstumsphasen ausgebildet ist |
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US5882722A (en) | 1995-07-12 | 1999-03-16 | Partnerships Limited, Inc. | Electrical conductors formed from mixtures of metal powders and metallo-organic decompositions compounds |
GB9518033D0 (en) * | 1995-09-05 | 1995-11-08 | Cookson Matthey Ceramics Plc | Composition |
US6071437A (en) * | 1998-02-26 | 2000-06-06 | Murata Manufacturing Co., Ltd. | Electrically conductive composition for a solar cell |
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US7435361B2 (en) * | 2005-04-14 | 2008-10-14 | E.I. Du Pont De Nemours And Company | Conductive compositions and processes for use in the manufacture of semiconductor devices |
US7462304B2 (en) | 2005-04-14 | 2008-12-09 | E.I. Du Pont De Nemours And Company | Conductive compositions used in the manufacture of semiconductor device |
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JP2009524920A (ja) * | 2006-01-25 | 2009-07-02 | フラウンホーファー−ゲゼルシャフト ツール フエルデルング デア アンゲヴァンテン フォルシュング エー.ファオ. | 太陽電池セルの金属電極パターン作製方法 |
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JP2011524068A (ja) * | 2008-05-28 | 2011-08-25 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 光電池の導体に使用されるサブミクロン粒子を含む組成物 |
-
2008
- 2008-07-10 DE DE102008032554A patent/DE102008032554A1/de not_active Withdrawn
-
2009
- 2009-07-06 BR BRPI0915437A patent/BRPI0915437A2/pt not_active IP Right Cessation
- 2009-07-06 EP EP09776983A patent/EP2304815A1/de not_active Withdrawn
- 2009-07-06 CA CA2729870A patent/CA2729870A1/en not_active Abandoned
- 2009-07-06 WO PCT/EP2009/004877 patent/WO2010003619A1/de active Application Filing
- 2009-07-06 KR KR1020117001373A patent/KR20110026486A/ko not_active Application Discontinuation
- 2009-07-06 CN CN2009801261631A patent/CN102084502A/zh active Pending
- 2009-07-06 US US13/003,252 patent/US20110186121A1/en not_active Abandoned
- 2009-07-06 JP JP2011517016A patent/JP2011527490A/ja not_active Withdrawn
- 2009-07-06 RU RU2010154190/28A patent/RU2010154190A/ru unknown
-
2010
- 2010-12-23 IL IL210241A patent/IL210241A0/en unknown
Non-Patent Citations (1)
Title |
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See references of WO2010003619A1 * |
Also Published As
Publication number | Publication date |
---|---|
CA2729870A1 (en) | 2010-01-14 |
US20110186121A1 (en) | 2011-08-04 |
KR20110026486A (ko) | 2011-03-15 |
JP2011527490A (ja) | 2011-10-27 |
IL210241A0 (en) | 2011-03-31 |
RU2010154190A (ru) | 2012-08-20 |
DE102008032554A1 (de) | 2010-01-14 |
WO2010003619A1 (de) | 2010-01-14 |
CN102084502A (zh) | 2011-06-01 |
BRPI0915437A2 (pt) | 2015-11-10 |
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