Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/02—Details
  • H01L31/0224—Electrodes
  • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
  • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/02—Details
  • H01L31/0216—Coatings
  • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
  • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
  • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy

Definitions

• the invention relates to a photovoltaic cell front-face substrate, in particular a transparent glass substrate.
• a photovoltaic photovoltaic material system that generates electrical energy under the effect of incident radiation is positioned between a back-face substrate and a front-face substrate, this front-face substrate being the first substrate which is traversed by the incident radiation before it reaches the photovoltaic material.
• the front-face substrate conventionally comprises, beneath a main surface facing the photovoltaic material, a transparent electrode coating in electrical contact with the photovoltaic material disposed below when considering that the main direction arrival of incident radiation is from above.
• This front face electrode coating thus constitutes, for example, the negative terminal of the photovoltaic cell.
• the photovoltaic cell also comprises, in the direction of the rear-face substrate, an electrode coating which then constitutes the positive terminal of the photovoltaic cell, but in general, the electrode coating of the rear-face substrate is not transparent.
• photovoltaic cell must be understood to mean any set of constituents generating the production of an electric current between its electrodes by conversion of solar radiation, whatever the dimensions of this assembly and whatever the voltage may be. and the intensity of the current produced and in particular that this set of components has, or not, one or more internal electrical connection (s) (in series and / or in parallel).
• the notion of "cell photovoltaic "in the sense of the present invention is here equivalent to that of" photovoltaic module "or" photovoltaic panel ".
• the material usually used for the transparent electrode coating of the front-face substrate is generally a transparent conductive oxide ("TCO") material, such as for example an indium oxide-based material.
• TCO transparent conductive oxide
• ITO tin
• ZnO zinc oxide doped with aluminum
• ZnO: B doped with boron
• SnO 2 fluorine
• CVD chemical vapor deposition
• PECVD plasma-assisted chemical vapor deposition
• cathodic sputtering possibly assisted by magnetic field
• TCO must be deposited at a relatively large physical thickness, of the order of 500 to 1000 nm and sometimes even more, which is expensive compared to the price of these materials when they are deposited in layers of this thickness.
• Electrode coatings made of a TCO-based material lies in the fact that for a chosen material, its physical thickness is always a compromise between the electrical conduction finally obtained and the transparency finally obtained because the greater the physical thickness is important the higher the conductivity, the lower the transparency, and the lower the physical thickness, the stronger the transparency but the lower the conductivity.
• the transparent electrode coating is not made of a TCO-based material but consists of a stack of thin layers deposited on a main face of the front-face substrate, this coating comprising at least one metal functional layer, in particular based on silver, and at least two antireflection coatings, said antireflection coatings each comprising at least one antireflection layer, said functional layer being disposed between the two antireflection coatings.
• This process is remarkable in that it provides that at least one highly refractive oxide or nitride layer is deposited below the metal functional layer and above the photovoltaic material when considering the direction of incident light. who enters the cell from above.
• the document discloses an exemplary embodiment in which the two antireflection coatings which frame the metal functional layer, the antireflection coating disposed under the metal functional layer towards the substrate and the antireflection coating disposed above the opposite metallic functional layer.
• the substrate each comprise at least one layer made of a highly refractive material, in this case zinc oxide (ZnO) or silicon nitride (S 3 N 4 ).
• the present invention thus consists, for a photovoltaic cell front face substrate, of defining the optical path making it possible to obtain the - A - better performance of the photovoltaic cell according to the chosen photovoltaic material.
• the invention thus has, in its broadest sense, a photovoltaic cell with an absorbent photovoltaic material according to claim 1.
• This cell comprises a front-face substrate, in particular a transparent glass substrate, comprising on a main surface an electrode coating.
• transparent film consisting of a stack of thin layers comprising a metal functional layer, in particular based on silver, and at least two antireflection coatings, said antireflection coatings each comprising at least one antireflection layer, said functional layer being disposed between the two antireflection coatings .
• the antireflection coating disposed below the metal functional layer in the direction of the substrate has an optical thickness equal to about one eighth of the maximum wavelength ⁇ m of absorption of the photovoltaic material and the antireflection coating disposed above the layer metallic functional opposite the substrate has an optical thickness equal to about half of the maximum wavelength absorption ⁇ m of the photovoltaic material.
• the maximum wavelength ⁇ m of absorption of the photovoltaic material is, however, weighted by the solar spectrum.
• the photovoltaic cell is characterized in that the antireflection coating disposed below the metal functional layer in the direction of the substrate has an optical thickness equal to about one eighth of the maximum wavelength ⁇ M of the product of the spectrum of the absorption of the photovoltaic material by the solar spectrum and the antireflection coating disposed above the metal functional layer opposite the substrate has an optical thickness equal to about half of the maximum wavelength ⁇ M of the product of the spectrum of the absorption of the photovoltaic material by the solar spectrum.
• an optimum optical path is defined as a function of the maximum wavelength ⁇ m of absorption of the photovoltaic material or preferably as a function of the maximum wavelength ⁇ M of the product of the spectrum of the absorption of the photovoltaic material by the solar spectrum, in order to obtain the best efficiency of the photovoltaic cell.
• the solar spectrum referred to herein is the AM 1.5 solar spectrum as defined by ASTM.
• coating in the sense of the present invention, it should be understood that there may be a single layer or several layers of different materials inside the coating.
• anti-reflective layer in the sense of the present invention, it should be understood that from the point of view of its nature, the material is “non-metallic", that is to say is not a metal. In the context of the invention, this term does not intend to introduce any limitation on the resistivity of the material, which may be that of a conductor (in general, p ⁇ 10 3 ⁇ .cm), of an insulator (in general, p> 10 9 ⁇ .cm) or a semiconductor (generally between these two previous values).
• the optical path of a functional monolayer thin film stack electrode coating which has an antireflection coating disposed above the functional metal layer having an optical thickness of about four Once the optical thickness of the antireflection coating disposed below the metal functional layer, provides the improved efficiency of the photovoltaic cell, as well as its improved resistance to stresses generated during the operation of the cell.
• Said antireflection coating disposed above the metallic functional layer thus preferably has an optical thickness between 3.1 and 4.6 times the optical thickness of the antireflection coating disposed below the metallic functional layer, including those values; even the antireflection coating placed above the functional layer metal has an optical thickness between 3.2 and 4.2 times the optical thickness of the antireflection coating disposed below the metal functional layer, including these values.
• the functional layer alone allows to obtain the desired conductivity for the electrode coating, even at a low physical thickness (of the order of 10 nm), it will strongly oppose the passage of light.
• optical path here takes on a specific meaning and is used to denote the summary of the different optical thicknesses of the different antireflection coatings underlying and overlying the functional metallic layer of the interference filter thus produced. It is recalled that the optical thickness of a coating is equal to the product of the physical thickness of the material by its index when there is only one layer in the coating or the sum of the products of the physical thickness of the material of each layer by its index when there are several layers.
• the optical path according to the invention is, in absolute terms, a function of the physical thickness of the metallic functional layer, but in reality in the physical thickness range of the functional metal layer which makes it possible to obtain the desired conductance, it turns out that it does not vary so to speak.
• the solution according to the invention is thus suitable when the functional layer is based on silver, is unique, and has a physical thickness of between 5 and 20 nm, including these values.
• the type of stack of thin layers according to the invention is known in the field of glazing of buildings or vehicles to achieve reinforced thermal insulation glazings of the "low-emissive" and / or "solar control" type.
• the present invention thus also relates to the use of this stack of thin layers which has undergone a quenching heat treatment, as well as the use of a stack of thin layers for architectural glazing having the characteristics of the invention having has undergone a surface heat treatment of the type known from the French patent application No. FR 2 911 130.
• each other glazing incorporating tempered substrates and non-hardened substrates, all coated with the same stack, without it being possible to distinguish them. each other by a simple visual observation of the reflection color and / or light reflection / transmission.
• a stack or a substrate coated with a stack that has the following variations before / after thermal treatment will be considered as hardenable because these variations will not be perceptible to the eye: - a variation of light transmission (in the visible) ⁇ T L low, less than 3% or even 2%; and or
• ⁇ E / (( ⁇ L *) 2 + ( ⁇ a *) 2 + ( ⁇ b *) 2 ) weak, less than 3, or even 2.
• a stack or a substrate coated with a stack that has after the heat treatment the following characteristics will be considered to be dipping in the context of the present invention, whereas before the heat treatment at least one of these characteristics does not occur. was not fulfilled:
• T L a light transmission (in the visible) T L high of at least 65, even 70%, or even at least 75%;
• a light absorption in the visible, defined by 1 -T L -R L ) low, less than 10%, or even less than 8%, or even 5%; and / or a square resistance R at least as good as that of the conductive oxides conventionally used, and in particular less than 20 ⁇ /, or even less than 15 ⁇ /, or even equal to or less than 10 ⁇ /.
• the electrode coating must be transparent. It must thus present, mounted on the substrate, a mean light transmission between 300 and 1200 nm minimum 65%, even 75% and more preferably 85% or more including at least 90%.
• the substrate coated with the stack acting as electrode coating is not very transparent. It may for example have, before this heat treatment a light transmission in the visible less than 65%, or even less than 50%.
• the electrode coating is transparent before heat treatment and is such that, after the heat treatment, it has an average light transmission between 300 and 1200 nm (in the visible) of at least 65%, or even 75%, and still preferably 85% or more, especially at least 90%.
• the stack does not have in absolute the best light transmission possible, but has the best possible light transmission in the context of the photovoltaic cell according to the invention.
• the antireflection coating disposed below the metallic functional layer in the direction of the substrate has an optical thickness equal to approximately one-eighth of the maximum absorption wavelength ⁇ m of the photovoltaic material and that the antireflection coating disposed above the metal functional layer opposite the substrate has an optical thickness equal to about half of the maximum wavelength ⁇ m absorption of the photovoltaic material,
• the antireflection coating disposed below the metallic functional layer in the direction of the substrate has an optical thickness equal to about one-eighth of the length wavelength ⁇ M of the product of the spectrum of absorption of the photovoltaic material by the solar spectrum and the antireflection coating disposed above the metal functional layer opposite the substrate has an optical thickness equal to about half of the maximum wavelength ⁇ M of the product of the spectrum of the absorption of the photovoltaic material by the solar spectrum
• the electrode coating according to the invention preferably comprises a termination layer farthest from the substrate (and which is in contact with the photovoltaic material) which conducts the current, in particular based on transparent conductive oxide, TCO.
• This current conducting termination layer is of a material which has a resistivity p (which corresponds to the product of the square resistance R of the layer by its thickness) such that 2.10 4 ⁇ .cm ⁇ p ⁇ 10 ⁇ .cm, even such that 1.10 4 ⁇ .cm ⁇ p ⁇ 10 ⁇ .cm.
• This current-carrying termination layer preferably has an optical thickness of between 50 and 98% of the optical thickness of the antireflection coating furthest from the substrate and in particular an optical thickness of between 85 and 98% of the optical thickness. antireflection coating furthest from the substrate.
• the antireflection coating disposed above the metallic functional layer can not be entirely electrically insulating (over its entire thickness).
• a transparent conductive oxide suitable for the implementation of this terminating layer variant which conducts the current is chosen from the list comprising: ITO, ZnO: Al, ZnO: B, ZnO: Ga, SnO 2 : F, TiO 2 : Nb, Cadmium stannate, zinc and tin mixed oxide Sn x Zn y 0 z (where x, y and z are optionally doped numbers, for example antimony Sb, and generally all transparent conductive oxides obtained from at least one of Al, Ga, Sn, Zn, Sb, In , Cd, Ti, Zr, Ta, W and Mo, and in particular the oxides from one of these elements doped with at least one other of these elements, or the mixed oxides of at least two of these elements, optionally doped with at least a third of these elements.
• Said antireflection coating disposed above the metallic functional layer preferably has an optical thickness of between 0.45 and 0.55 times the maximum absorption wavelength ⁇ m of the photovoltaic material, including these values and more preferably, said antireflection coating disposed above the metallic functional layer has an optical thickness of between 0.45 and 0.55 times the maximum wavelength ⁇ M of the product of the spectrum of absorption of the photovoltaic material by the solar spectrum, including these values.
• the antireflection coating disposed beneath the metal functional layer has an optical thickness of between 0.075 and 0.175 times the maximum wavelength ⁇ m of absorption of the photovoltaic material, including these values and preferably said antireflection coating disposed below the metallic functional layer has an optical thickness of between 0.075 and 0.175 times the maximum wavelength ⁇ M of the product of the spectrum of absorption of the photovoltaic material by the solar spectrum, including these values.
• the antireflection coating disposed beneath the metallic functional layer may also have a function of chemical barrier to diffusion, and in particular to the diffusion of sodium from the substrate, thus protecting the electrode coating, and more particularly the functional metallic layer, in particular during a possible heat treatment, especially quenching.
• the substrate comprises, under the electrode coating, a base antireflection layer having a low refractive index close to that of the substrate, said base antireflection layer preferably being based on silicon oxide or based on aluminum oxide, or a mixture of both.
• this dielectric layer may constitute a chemical barrier layer to the diffusion, and particularly to the diffusion of sodium from the substrate, thus protecting the electrode coating, and more particularly the functional metal layer, especially during a possible heat treatment, especially quenching.
• a dielectric layer is a layer which does not participate in the displacement of electric charge (electric current) or whose effect of participation in the displacement of electric charge can be considered as zero compared to that of the others. electrode coating layers.
• this basic antireflection layer preferably has a physical thickness of between 10 and 300 nm or between 35 and 200 nm and more preferably between 50 and 120 nm.
• the metal functional layer is preferably deposited in a crystallized form on a thin dielectric layer which is also preferably crystallized (then called "wetting layer” as promoting the proper crystalline orientation of the metal layer deposited thereon).
• This functional metal layer may be based on silver, copper or gold, and may optionally be doped with at least one other of these elements.
• Doping is usually understood as a presence of the element in an amount of less than 10% molar mass of metal element in the layer and the term "based on” is understood to mean typical of a layer containing mainly the material, that is to say containing at least 50% of this material in molar mass; the term “based on” thus covers doping.
• the stack of thin layers producing the electrode coating is a functional monolayer coating, that is to say a single functional layer; it can not be multi-functional layers.
• the functional layer is thus preferably deposited over one or even directly onto an oxide-based wetting layer, in particular based on zinc oxide, optionally doped, optionally with aluminum.
• the physical (or actual) thickness of the wetting layer is preferably between 2 and 30 nm and more preferably between 3 and 20 nm.
• This wetting layer is dielectric and is a material which preferably has a resistivity p (defined by the product of the resistance per square of the layer by its thickness) such that 0.5 ⁇ .cm ⁇ p ⁇ 200 ⁇ . cm or such that 50 ⁇ .cm ⁇ p ⁇ 200 ⁇ .cm.
• the stack is generally obtained by a succession of deposits made by a technique using the vacuum such as sputtering possibly assisted by magnetic field.
• a layer or coating deposit (comprising one or more layers) is carried out directly under or directly on another deposit, it is that there can be no interposition of 'no layer between these two deposits.
• At least one blocking coating is preferably based on Ni or Ti or is based on a Ni-based alloy, in particular is based on a NiCr alloy.
• the coating below the metal functional layer in the direction of the substrate and / or the coating above the metallic functional layer comprises (nt), preferably a layer based on mixed oxide, in particular based on mixed oxide zinc and tin or mixed tin and indium oxide (ITO).
• the coating below the metallic functional layer in the direction of the substrate and / or the coating above the metallic functional layer may have a layer with a high refractive index, in particular greater than or equal to 2.2. , for example a silicon nitride-based layer, optionally doped, for example with aluminum or zirconium.
• the coating below the metallic functional layer in the direction of the substrate and / or the coating above the metallic functional layer may have a layer with a very high refractive index, in particular greater than or equal to 2, 35, such as a titanium oxide layer.
• the substrate may include a photovoltaic material-based coating above the electrode coating opposite the front-face substrate.
• a preferred structure of front-face substrate according to the invention is thus of the type: substrate / (optional antireflective base layer) / electrode coating / photovoltaic material, or else of the type: substrate / (layer optional antireflection coating) / electrode coating / photovoltaic material / electrode coating.
• the electrode coating consists of a stack for architectural glazing, in particular a stack for architectural glazing "hardenable” or “to be tempered”, and in particular a low-emissive stack, in particular a low-emissive stack "hardenable Or “to soak", this stack of thin layers having the characteristics of the invention.
• the present invention also relates to a substrate for a photovoltaic cell according to the invention, in particular a substrate for architectural glazing coated with a stack of thin layers having the characteristics of the invention, in particular a substrate for architectural glazing "hardenable” or “Quenching” having the characteristics of the invention, and in particular a low-emissive substrate, in particular a low-emissive "quenchable” or “quenching” substrate having the characteristics of the invention.
• the present invention thus also relates to this architectural glazing substrate coated with a stack of thin layers having the characteristics of the invention and which has undergone a quenching heat treatment, as well as this substrate for architectural glazing coated with a stack of thin layers having the characteristics of the invention having undergone a heat treatment of the type known from the French patent application No. FR 2 911 130.
• All layers of the electrode coating are preferably deposited by a vacuum deposition technique, but it is not excluded, however, that the first or first layers of the stack may be deposited by a another technique, for example by a pyrolytic or CVD type thermal decomposition technique, optionally under vacuum, possibly assisted by plasma.
• the electrode coating according to the invention with a thin film stack is moreover mechanically more resistant than a TCO electrode coating. Thus, the lifespan of the photovoltaic cell can be increased.
• the electrode coating according to the invention with a thin film stack also has an electrical resistance at least as good as that of the TCO conductive oxides usually used.
• the square resistance R of the electrode coating according to the invention is between 1 and 20 ⁇ / or between 2 and 15 ⁇ /, for example of the order of 5 to 8 ⁇ /.
• the electrode coating according to the invention with a thin film stack also has a light transmission in the visible at least as good as that of the TCO conductive oxides usually used.
• the light transmission in the visible electrode coating according to the invention is between 50 and 98%, or between 65 and 95%, for example of the order of 70 to 90%.
• FIG. 1 illustrates a front-facing photovoltaic cell substrate of the prior art coated with a coating conductive transparent oxide electrode and base anti-reflective layer;
• FIG. 2 illustrates a photovoltaic cell front face substrate according to the invention coated with an electrode coating consisting of a functional monolayer thin layer stack and an anti-reflection base layer;
• FIG. 3 illustrates the quantum efficiency curve of three photovoltaic materials
• FIG. 4 illustrates the real efficiency curve corresponding to the product of the spectrum of the absorption of these three photovoltaic materials by the solar spectrum
• FIG. 5 illustrates the principle of the durability test of photovoltaic cells
• FIG. 6 illustrates a sectional diagram of a photovoltaic cell.
• FIG. 1 illustrates a photovoltaic cell front-facing substrate 10 'of the prior art with absorbent photovoltaic material 200, said substrate 10' comprising on a main surface a transparent electrode coating 100 'consisting of a layer which conducts the current 66 in TCO.
• the front-face substrate 10 ' is disposed in the photovoltaic cell such that the front-face substrate 10' is the first substrate traversed by the incident radiation R, before reaching the photovoltaic material 200.
• the substrate 10 'further comprises in the electrode coating 100', that is to say directly on the substrate 10 a base antireflection layer 15 having a refractive index n 15 low close to that of the substrate.
• FIG. 2 illustrates a photovoltaic cell front-face substrate 10 according to the invention.
• the front-face substrate 10 also has a transparent electrode coating 100 on a main surface, but here this electrode coating 100 consists of a thin-film stack comprising a metal-based functional layer 40, based on silver, and at least two antireflection coatings 20, 60, said coatings each having at least one fine antireflection layer 24, 26; 64, 66, said functional layer 40 being disposed between the two antireflection coatings, one called the underlying antireflection coating 20 located below the functional layer, towards the substrate, and the other called overlying antireflection coating 60 located above the functional layer, in the opposite direction to the substrate.
• this electrode coating 100 consists of a thin-film stack comprising a metal-based functional layer 40, based on silver, and at least two antireflection coatings 20, 60, said coatings each having at least one fine antireflection layer 24, 26; 64, 66, said functional layer 40 being disposed between the two antireflection coatings, one called the underlying antireflection coating 20 located below the functional layer, towards the substrate
• the stack of thin layers constituting the transparent electrode coating 100 of FIG. 2 is a stacking structure of the type of that of a low-emissive, possibly quenchable or soaking substrate, a functional monolayer, such as can be found in the trade, for applications in the field of architectural glazing for buildings.
• the stack of thin layers is deposited on a substrate 10 made of clear soda-lime glass with a thickness of 4 mm.
• the electrode coating 100 'of the examples according to FIG. 1 are based on conductive aluminum-doped zinc oxide.
• Each stack constituting an electrode coating 100 of the examples according to FIG. 2 consists of a stack of thin layers comprising:
• an underlying blocking coating for example based on Ti or based on a NiCr alloy could be disposed directly under the functional layer 40, but is not provided here; this coating is generally necessary if there is no damping layer 26, but is not necessarily essential;
• the single functional layer 40 silver, is here arranged directly on the wetting coating 26; an overlying blocking coating 50 based on Ti or based on a NiCr alloy could be placed directly on the functional layer 40 but is not provided in the examples made;
• the photovoltaic material 200 based on microcrystallized silicon (whose crystallite size is of the order of
• the photovoltaic material 200 based on amorphous silicon (that is to say not crystallized).
• the quantum efficiency QE is in a known manner the expression of the probability (between 0 and 1) that an incident photon with a wavelength according to the abscissa is transformed into an electron-hole pair .
• the maximum absorption wavelength ⁇ m that is to say the wavelength at which the quantum efficiency is maximum (that is to say the higher) :
• amorphous silicon a-Si, ⁇ m a-Si, is 520 nm
• microcrystallized silicon ⁇ c-Si, ⁇ m ⁇ c-Si, is 720 nm
• cadmium telluride CdTe, ⁇ m CdTe is 600 nm. In a first approach, this maximum absorption wavelength ⁇ m is sufficient.
• the antireflection coating 20 disposed below the metal functional layer 40 in the direction of the substrate then has an optical thickness equal to about one-eighth of the maximum absorption wavelength ⁇ m of the photovoltaic material and the antireflection coating 60 disposed above. above the metal functional layer 40 opposite the substrate then has an optical thickness equal to about half of the maximum absorption wavelength ⁇ m of the photovoltaic material.
• Table 1 below summarizes the preferred ranges of the optical thicknesses in nm, for each coating 20, 60, as a function of these three materials.
• the optical definition of the stack can be improved by considering the quantum efficiency to obtain an improved real efficiency by convolving this probability by the wavelength distribution of the sunlight at the surface of the earth.
• the standardized solar spectrum AM1.5 we use the standardized solar spectrum AM1.5.
• the antireflection coating 20 disposed below the metal functional layer 40 in the direction of the substrate has an optical thickness equal to about one-eighth of the maximum wavelength ⁇ M of the product of the absorption spectrum of the photovoltaic material by the solar spectrum and the antireflection coating 60 disposed above the layer metallic functional device 40 opposite the substrate has an optical thickness equal to about half of the maximum wavelength ⁇ M of the product of the spectrum of the absorption of the photovoltaic material by the solar spectrum.
• the maximum wavelength ⁇ M of the product of the spectrum of the absorption of the photovoltaic material by the solar spectrum that is to say the wavelength at which the efficiency is maximum (that is the highest):
• amorphous silicon a-Si, a-Si M ⁇ is 530 nm
• ⁇ c-Si, ⁇ c-Si ⁇ M is 670 nm
• Table 2 summarizes the preferred ranges of the optical thicknesses in nm, for each coating 20, 60, as a function of these three materials.
• a silicon oxide-based base antireflection layer 15 was deposited between the substrate and the electrode coating 100. Its refractive index n 15 being low and close to that of the substrate, its optical thickness n ' is not taken into account in the definition of the optical path of the stack according to the invention.
• the deposition conditions of these layers are known to those skilled in the art since it involves making stacks similar to those used for low-emission or solar control applications.
• Tables 3, 5 and 7 below summarize the materials and physical thicknesses measured in nanometers of each of the layers of each of Examples 1 to 12 and Tables 4, 6 and 8 show the main features of these examples.
• the performance characteristic P is calculated by the so-called "TSQE" method where the product of the integration of the spectrum is operated over the entire radiation domain under consideration with the quantum efficiency QE of the cell. All examples, 1 to 12, have been subjected to a resistance test of the electrode coatings to the stresses generated during the operation of the cell (in particular the presence of an electrostatic field), carried out as shown in FIG. 5.
• a piece of substrate 10, 10 'for example 5cmx5cm and coated electrode coating 100, 100', but without photovoltaic material 200 is deposited on a metal plate 5 disposed on heat source 6 at about 200 0 C.
• 10, 10 'coated electrode coating 100, 100' by making an electrical contact 102 on the surface thereof and connecting this contact 102 and the metal plate 5 to the terminals of a power supply 7 delivering DC current of about 200 V.
• the antireflection coating 60 has an optical thickness equal to 3.74 times the optical thickness of the antireflection coating 20.
• Example 4 This first series shows that it is possible to obtain an electrode coating consisting of a thin film stack coated with amorphous silicon (Example 4) which has a better square resistance R (-3.5 ohms /) and a performance P better (+ 4.8%) than a TCO electrode coating coated with the same amorphous material (Example 2).
• the thicknesses The optical coatings 20 and 60 of Example 4 fall within the acceptable ranges for an ⁇ -Si photovoltaic material 200 according to Table 1 and Table 2. However, the optical thicknesses of the coatings 20 and 60 are respectively closer to ⁇ M / 8 and ⁇ M / 2 of Table 2 than of ⁇ m / 8 and ⁇ m / 2 of Table 1.
• the square resistance R of the electrode layer consisting of a stack of thin layers and coated with microcrystallized silicon is also better, but the performance P is less good (-1.8%) than those of TCO electrode coating coated with the same microcrystallized material (Example 1).
• the optical thickness of 270.6 nm of the coating 60 of Example 3 does not fall within the acceptable range of 324-396 nm for a photovoltaic material 200 ⁇ c-Si according to Table 1 or a fortiori within the acceptable range. of 302-369 nm for a photovoltaic material 200 in ⁇ c-Si according to Table 2.
• the proportion of electrode coating with a thin-film stack remaining after the resistance test is much higher, whatever the photovoltaic material, at the TCO electrode coating proportion remaining after the resistance test (Examples 1 and 3).
• the antireflection coating 60 has an optical thickness equal to 3.2 times the optical thickness of the antireflection coating 20.
• the second series shows that it is possible to obtain an electrode coating consisting of a stack of thin layers and coated with microcrystallized silicon (Example 7) which has a better square resistance R ( - 3 ohms /) and a better performance P (+ 6%) than a TCO electrode coating coated with the same microcrystallized material (Example 5).
• the optical thicknesses of coatings 20 and 60 Example 7 fall within the acceptable ranges for a photovoltaic material 200 ⁇ c-Si according to Table 1 and Table 2.
• the optical thickness of the coating 60 is, however, closer to ⁇ M / 2 of ⁇ c-Si in the table 2 than ⁇ m / 2 of Table 1.
• the square resistance R of the electrode coating consisting of a stack of thin layers and coated with amorphous silicon (Example 8) is also better, but the performance P is less good (-13.1%) than those of TCO electrode coating coated with the same amorphous material (Example 6).
• the optical thicknesses of 345 nm of the coating 60 and 107.6 nm of the coating 20 of Example 8 do not fall within the acceptable ranges of 234-286 nm and 39-91 nm respectively for a photovoltaic material 200.
• -Si according to Table 1 or a fortiori in the acceptable ranges respectively of 239-292 nm and 40-93 for photovoltaic material 200 a-Si according to Table 2.
• the antireflection coating 60 has an optical thickness equal to 4.05 times the optical thickness of the antireflection coating 20.
• the third series shows that it is possible to obtain an electrode coating consisting of a thin film stack coated with amorphous silicon (Example 12 which has a better R-square resistance (-2.9 ohms /) and a better performance P (+ 9.6%) than a coated TCO electrode coating; same amorphous material (Example 10)
• the optical thicknesses of the coatings 20 and 60 of Example 12 fall within the acceptable ranges for an ⁇ -Si photovoltaic material 200 according to Table 1 and Table 2.
• optical thicknesses of the coatings 20 and 60 are however respectively closer to ⁇ M / 8 and ⁇ M / 2 of Table 2 than to ⁇ m / 8 and ⁇ m / 2 of Table 1. These optical thicknesses of coatings 20 and 60 of Example 12 are elsewhere almost identi respectively at the values ⁇ M / 8 and ⁇ M / 2 in Table 2.
• the square resistance R of the electrode layer consisting of a stack of thin layers and coated with microcrystallized silicon is also better, but the performance P is less good (-11.6%) than those of FIG. TCO electrode coating coated with the same microcrystallized material (Example 9).
• the optical thickness of 266 nm of the coating 60 of Example 11 does not fall within the acceptable range of 324-396 nm for a photovoltaic material 200 in ⁇ c-Si according to Table 1, or a fortiori in the acceptable range of 302-369 nm for a photovoltaic material 200 in ⁇ c-Si according to Table 2.
• the optical thicknesses of the coatings 20 and 60 of Example 12 are closer to the ideal theoretical values of a-Si ( respectively of 65 nm and 260 nm considering ⁇ m and 66 nm and 265 nm considering ⁇ M ) than those of example 4 (respectively 72.3 nm and 270.6 nm) and that the performance of the Example 12 is higher (+ 4.8%), with almost identical R-square resistance and with a proportion of thin film stack electrode coating remaining after the PRT resistance test which is almost identical.
• the antireflection coating 20 disposed below the metal functional layer 40 towards the substrate has an optical thickness equal to about one-eighth of the maximum wavelength ⁇ M of the produces the spectrum of absorption of the photovoltaic material by the solar spectrum and that the antireflection coating 60 disposed above the metallic functional layer 40 opposite the substrate has an optical thickness equal to about half the length of the maximum wave ⁇ M of the product of the spectrum of the absorption of the photovoltaic material by the solar spectrum.
• the stacks of thin layers forming electrode coating in the context of the invention do not necessarily have in absolute a very high transparency.
• the light transmission in the visible of the substrate coated only with the stack forming the electrode coating and without the photovoltaic material is 75.3% while the light transmission in the visible range of the equivalent example with a TCO electrode coating and without the photovoltaic material, that of Example 1, is 85%.
• FIG. 6 illustrates a photovoltaic cell 1 in section provided with a front-face substrate 10 according to the invention, through which incident radiation R and a back-face substrate 20 penetrate.
• the photovoltaic material 200 for example amorphous silicon or crystalline silicon or microcrystalline or Cadmium telluride or Diselenide Copper Indium (CuInSe 2 - CIS) or Copper-Indium-Gallium-Selenium, is located between these two substrates . It consists of a layer of n-doped semiconductor material 220 and a p-doped semiconductor material layer 240, which will produce the electric current.
• the electrode coatings 100, 300 interposed respectively between firstly the front-face substrate 10 and the layer of n-doped semiconductor material 220 and secondly between the p-doped semiconductor material layer 240 and the substrate of FIG. rear face 20 complete the electrical structure.
• the electrode coating 300 may be based on silver or aluminum, or may also consist of a thin film stack comprising at least one metallic functional layer and according to the present invention.
• the present invention is described in the foregoing by way of example. It is understood that the skilled person is able to achieve different variants of the invention without departing from the scope of the patent as defined by the claims.

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