EP2147477B1 - Composant haute fréquence à pertes diélectriques faibles - Google Patents

Composant haute fréquence à pertes diélectriques faibles Download PDF

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Publication number
EP2147477B1
EP2147477B1 EP08748779A EP08748779A EP2147477B1 EP 2147477 B1 EP2147477 B1 EP 2147477B1 EP 08748779 A EP08748779 A EP 08748779A EP 08748779 A EP08748779 A EP 08748779A EP 2147477 B1 EP2147477 B1 EP 2147477B1
Authority
EP
European Patent Office
Prior art keywords
frequency component
dimensional structure
insulating element
component according
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Not-in-force
Application number
EP08748779A
Other languages
German (de)
English (en)
Other versions
EP2147477A1 (fr
Inventor
Peter Böhmer
Michael Schubert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Spinner GmbH
Original Assignee
Spinner GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Spinner GmbH filed Critical Spinner GmbH
Publication of EP2147477A1 publication Critical patent/EP2147477A1/fr
Application granted granted Critical
Publication of EP2147477B1 publication Critical patent/EP2147477B1/fr
Not-in-force legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/213—Frequency-selective devices, e.g. filters combining or separating two or more different frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
    • H01P3/08—Microstrips; Strip lines

Definitions

  • the present invention relates to a high-frequency component having an inner conductor structure, which is insulated with at least one insulation element electrically against an outer conductor, wherein the insulation element mechanically supports the inner conductor structure.
  • high-frequency components are frequently used, in which an internal conductor structure not only has to be insulated against the outer conductor, but also has to be mechanically supported. Examples include filters, couplers, splitters or multiplexers.
  • diplexers are used between base stations and mobile radio antennas in order to be able to emit signals in different frequency ranges, for example for GSM and UMTS, via the mobile radio antennas.
  • the diplexer leads to an insertion loss that should be as low as possible.
  • the internal conductor structure which forms the crossover is sandwiched between two solid sheets of polytetrafluoroethylene (PTFE).
  • PTFE polytetrafluoroethylene
  • the material PTFE is used as insulation material in order to minimize the insertion loss caused by the diplexer.
  • the two plates made of PTFE must be manufactured very precisely in thickness, in order to achieve a reliable support or fixation of the inner conductor structure in the housing. This increases the cost of manufacturing these insulation elements.
  • GB 1030134 describes a hoaxia (kable with sinem inner conductor an Aupenleiter and dimen isolator, the avs laminated kvnststottsokoten besfeht.
  • the object of the present invention is to provide a generic high-frequency component, which has a low insertion loss and can be produced inexpensively.
  • the proposed high-frequency component has, in a known manner, an inner conductor structure which is insulated electrically with at least one insulation element against an outer conductor, wherein the insulation element mechanically supports the inner conductor structure.
  • the High-frequency component is characterized in that the insulation element is formed of a formed into a three-dimensional structure and solidified by sintering with this three-dimensional structure film of an electrically insulating material, preferably a polymer material having a wall thickness which is less than a thickness caused by the three-dimensional structure of the insulating element is.
  • a PTFE film shaped to the three-dimensional structure is preferably used as the insulating element.
  • the thickness of this insulating element can be chosen slightly larger than required for fitting into the housing of the high-frequency component.
  • the insulation element can be compressed when closing the housing to the extent just required, in which case the support or fixation of the inner conductor structure, for example, a stripline structure, is optimally ensured.
  • a significant further advantage of the use of the three-dimensional structure is that the volume occupied by the insulating element has a significantly lower proportion of film material than a solid component of the same volume. Thus, the air content within this volume can be up to 90% and above.
  • the damping is reduced compared to the known high-frequency components with solid insulation elements.
  • the proposed high-frequency component thus has lower dielectric losses and can also be produced cost-effectively due to the lower accuracy requirements in the production of the insulation element (s).
  • the three-dimensional structure is preferably formed in the present high-frequency component in a wall thickness between 50 microns and 500 microns.
  • the wall thickness is of course not limited to these thickness ranges, as long as the wall thickness is less than the thickness of the insulating element.
  • the mechanical stability of the insulating element is achieved with such small wall thicknesses by the special shape of the insulating element, in which the film provided in the respective film thickness, formed three-dimensionally and solidified in the three-dimensional shape by sintering. In this way, rigid edges are obtained in the three-dimensional structure, which increase the mechanical stability of the structure.
  • the three-dimensionally shaped insulating element obtains a much higher form and long-term stability than the thin one by a closed, special shaping in the sintering process - the combination of rigid edges in the plane of effective loading and radially symmetric contouring transversely to the effective load Having raw film itself and in an open design sintered three-dimensional components.
  • Rigid edges in the effective load plane generate a higher dimensional stability under identical load than other contours.
  • the closed, radially symmetric shape perpendicular to the effective load creates a stress build-up in the direction of the contour circumference of the rigid edges without the formation of voltage spikes.
  • This design reduces or eliminates the memory effect and leads to a long-term and to a critical point temperature-stable geometry of the Three-dimensional component with very thin wall thicknesses of sintered polymer films.
  • the three-dimensional structure is preferably designed such that the proportion of the electrically insulating material used at the volume occupied by the insulation element is ⁇ 25%, particularly preferably ⁇ 10%. This requirement can be adjusted to a certain extent via the wall thickness and the course of the three-dimensional structure.
  • the three-dimensional structure can in this case in simple cases only in one direction zig-zag or wavy. Basically, in the preferred structure, recesses and elevations alternate with one another, which, for example, can also be formed concentrically around a center. The highest areas of the elevations and / or the deepest areas of the depressions may in this case have any shapes, in particular round or angular or also be designed as planar areas. The distance of the depressions or elevations from each other can be constant or vary as needed. Furthermore, of course, more complex three-dimensional structures are possible, as long as they still ensure the required support function of the inner conductor structure.
  • the outer conductor is formed by the housing of the high-frequency component or is attached to the inside of this housing, for example.
  • a metallic layer As a metallic layer.
  • each of these insulating elements is formed according to the present invention.
  • the one insulating element may have a different structure than the other insulating element.
  • identically structured insulation elements can also be arranged rotated by 90 ° or another angle about an axis in the thickness direction relative to one another in the high-frequency component, thereby improving the mechanical support of the inner conductor structure.
  • the present invention can be used for different generic high-frequency components.
  • the function of the component is irrelevant, as long as one or more corresponding insulation elements for electrical insulation and simultaneous support of the inner conductor structure are required.
  • passive high-frequency components such as diplexers or multiplexers, RF couplers or HF splitters, high-frequency filters, etc.
  • the use of the proposed insulation element to support the inner conductor structure (and arranged thereon electrical components) in active high-frequency components is possible.
  • FIG. 1 schematically an example of a high-frequency component according to the invention is shown, which is formed in this example as a diplexer.
  • the internal conductor structure 2 required for the realization of a diplexer is only indicated here in a highly schematic manner.
  • the person skilled in the art is familiar with the design of such an inner conductor structure for the formation of a diplexer.
  • the diplexer 1 in cross-section perpendicular to the inner conductor structure 2, in the right part in section through the plane of the inner conductor structure 2 can be seen.
  • the housing 3 of the diplexer forms the outer conductor.
  • the output 6 and the inputs 7 of the diplexer 1 are indicated.
  • the inner conductor structure 2 is between two
  • Insulating elements 4, 5 embedded serve the electrical insulation between the inner conductor structure 2 and the housing 3 as an outer conductor and on the other the mechanical support of the inner conductor structure 2.
  • the two insulation elements 4, 5 are formed in this example of a formed into a three-dimensional structure PTFE film 10 of a thickness of 100 microns, which has been solidified by sintering in the form of the three-dimensional structure.
  • the inner conductor structure 2 is supported by these three-dimensional structures, as in the left part of FIG. 1 can be seen. Due to the spring effect of the three-dimensional structures, the thickness of each insulating element 4, 5 can be selected slightly larger than the distance between inner conductor structure 2 and GeHouseinnenwandung, in which case the insulation elements 4, 5 are slightly compressed when closing the housing 3. This allows a good fixation or support of the inner conductor structure 2 and significantly reduces the accuracy requirements for the production of the insulation elements 4, 5.
  • Fig. 2 shows in comparison thereto an embodiment of such a diplexer 1 according to the prior art, in which the two insulating elements of solid PTFE plates 8, 9 are formed.
  • these PTFE plates 8, 9 must be made very accurately in thickness.
  • the solid PTFE plates cause a significantly greater attenuation of the high-frequency signals than the insulating elements 4, 5 of the FIG. 1 in which between the inner conductor structure 2 and the housing 3, a very high proportion of air is present. Air causes lower dielectric losses of the high frequency signals than PTFE, so that the embodiment according to FIG. 1 leads to a lower insertion loss.
  • FIG. 3 finally shows an example of a possible three-dimensional structure of the insulating elements 4 and 5, in the left part of the figure in cross section, in the right part of the figure in plan view.
  • the PTFE sheet 10 is shaped to form concentric pits and bumps about a central area closed by flat plateaus.
  • the distances of the elevations or depressions can be chosen differently depending on the application, in order to reliably fulfill the respective support function. This support function also depends on the thickness or Eigentragschreib the inner conductor structure.
  • FIG. 4 Another example of an embodiment of such an insulation element 4, 5 shows FIG. 4 .
  • the PTFE film 10 for forming the three-dimensional structure is wave-shaped in one direction, as also seen in the left part of the figure in cross section and in the right part of the figure in plan view.
  • the insulation elements of the proposed high-frequency component is not limited to the structures shown here. Rather, any three-dimensional structures can be used, as long as through these structures required support of the inner conductor structure on the one hand and the required distance between the inner conductor structure and the outer conductor is ensured.
  • FIG. 5 Finally, schematically shows a process sequence for producing such, three-dimensionally shaped insulating element.
  • a unsintered PTFE film 11 having a thickness of 100 ⁇ m is provided on a roll 12, as can be obtained, for example, by a paste extrusion without final sintering.
  • the film 11 is conveyed with the portion 13 to be formed between the punch 14 and the die 15 of a hot press 16, as shown in the FIG. 5a can be seen.
  • punch 14 and die 15 are moved in a known manner against each other to bring the intermediate portion 13 of the film according to the surface structure of the punch and die in a three-dimensional shape (see. FIG. 5b ).
  • This surface structure 17 is in FIG. 5 only indicated schematically.
  • the section 13 of the film is heated to sintering temperature by means of heating spirals 18 integrated in the punch and die. In the present example, this heating is carried out to a temperature in the range between 350 ° and 360 ° C, which is optimal for the solidification of the film in the three-dimensional shape.
  • the film portion 13 is solidified in the three-dimensional shape by sintering, in which it is held by the interaction of the punch and die.
  • An expense high pressure is not required here.
  • Other possibilities of heating are possible here, for example via a hot air blower or inductive.
  • the film section 13 After solidification of the film section 13 by the sintering, the film section 13 is cooled. Stamp 14 and die 15 are then moved apart again as in FIG. 5c is indicated. Subsequently, the film 11 is further conveyed, so that the three-dimensionally shaped and solidified portion, the three-dimensionally shaped insulating member 4, is moved out of the hot press 16 (FIG. FIG. 5d ).
  • the finished insulation element 4 can be separated from the rest of the film by suitable separation processes, for example by punching.

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  • Control Of Motors That Do Not Use Commutators (AREA)
  • Coils Or Transformers For Communication (AREA)

Claims (17)

  1. Composant haute fréquence comportant une structure de conducteur interne (2), qui est isolée électriquement par rapport à un conducteur extérieur par au moins un élément d'isolation (4,5), dans lequel l'élément d'isolation (4,5) soutient mécaniquement la structure de conducteur interne (2),
    caractérisé en ce que
    l'élément d'isolation (4,5) est formé d'une feuille (10) façonnée en une structure en trois dimensions, qui a été fixée par frittage dans cette structure en trois dimensions et est formée d'un matériau isolant électriquement avec une épaisseur de paroi, qui est inférieure à une épaisseur de l'élément d'isolation (4,5) induite par la structure en trois dimensions.
  2. Composant haute fréquence selon la revendication 1, caractérisé en ce que
    l'épaisseur de paroi de la structure en trois dimensions est comprise entre 50 µm et 500 µm.
  3. Composant haute fréquence selon la revendication 1 ou 2,
    caractérisé en ce que
    l'élément d'isolation (4,5) est formé d'une feuille de PTFE (10) façonnée en une structure en trois dimensions.
  4. Composant haute fréquence selon une des revendications 1 à 3,
    caractérisé en ce que
    la structure en trois dimensions présente une forme en zigzag ou une forme ondulée.
  5. Composant haute fréquence selon une des revendications 1 à 3,
    caractérisé en ce que
    la structure en trois dimensions forme dans au moins une direction des élévations et des renfoncements en alternance.
  6. Composant haute fréquence selon la revendication 4 ou 5,
    caractérisé en ce que
    la structure en trois dimensions est réalisée de manière symétrique radialement.
  7. Composant haute fréquence selon une des revendications 1 à 6,
    caractérisé en ce que
    la structure de conducteur interne (2) est incorporée en sandwich entre deux des éléments d'isolation (4,5).
  8. Composant haute fréquence selon la revendication 7, caractérisé en ce que
    les deux éléments d'isolation (4,5) présente des structures tridimensionnelles identiques et sont disposées en étant décalées d'un angle, de préférence de 90°, l'une par rapport à l'autre.
  9. Composant haute fréquence selon une des revendications 1 à 8, qui est réalisé comme un multiplexeur, notamment comme un diplexeur.
  10. Composant haute fréquence selon une des revendications 1 à 8, qui est réalisé comme un filtre de hautes fréquences.
  11. Composant haute fréquence selon une des revendications 1 à 8, qui est réalisé comme un coupleur de hautes fréquences.
  12. Composant haute fréquence selon une des revendications 1 à 8, qui est réalisé comme un diviseur de hautes fréquences.
  13. Elément d'isolation pour composant haute fréquence selon une des revendications 1 à 12, qui est formé d'une feuille de PTFE (10) façonnée en une structure en trois dimensions, qui a été fixée par frittage dans cette structure en trois dimensions et présente une épaisseur de paroi, qui est inférieure à une épaisseur de l'élément d'isolation (4,5) induite par la structure en trois dimensions.
  14. Elément d'isolation selon la revendication 13, dans lequel l'épaisseur de paroi de la structure en trois dimensions est comprise entre 50 µm et 500 µm.
  15. Elément d'isolation selon la revendication 13 ou 14, dans lequel la structure en trois dimensions forme une forme en zigzag ou une forme ondulée.
  16. Elément d'isolation selon la revendication 13 ou 14, dans lequel la structure en trois dimensions forme dans au moins une direction des élévations et renfoncements en alternance.
  17. Elément d'isolation selon la revendication 15 ou 16, caractérisé en ce que la structure en trois dimensions est réalisée de manière symétrique radialement.
EP08748779A 2007-04-25 2008-04-25 Composant haute fréquence à pertes diélectriques faibles Not-in-force EP2147477B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007019447A DE102007019447B4 (de) 2007-04-25 2007-04-25 Hochfrequenzbauteil mit geringen dielektrischen Verlusten
PCT/DE2008/000711 WO2008131741A1 (fr) 2007-04-25 2008-04-25 Composant haute fréquence à pertes diélectriques faibles

Publications (2)

Publication Number Publication Date
EP2147477A1 EP2147477A1 (fr) 2010-01-27
EP2147477B1 true EP2147477B1 (fr) 2011-10-26

Family

ID=39683530

Family Applications (1)

Application Number Title Priority Date Filing Date
EP08748779A Not-in-force EP2147477B1 (fr) 2007-04-25 2008-04-25 Composant haute fréquence à pertes diélectriques faibles

Country Status (7)

Country Link
US (1) US20100148889A1 (fr)
EP (1) EP2147477B1 (fr)
CN (1) CN101755363A (fr)
AT (1) ATE531094T1 (fr)
DE (1) DE102007019447B4 (fr)
ES (1) ES2375681T3 (fr)
WO (1) WO2008131741A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104022329B (zh) * 2014-04-08 2017-11-14 重庆丰银包装材料有限公司 一种3dB电桥
CN110689998B (zh) * 2019-10-17 2021-12-21 上海幂方电子科技有限公司 一种可拉伸电极及其制备方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR49795E (fr) * 1938-09-13 1939-07-17 Lignes Telegraph Telephon Perfectionnements apportés aux conducteurs coaxiaux
GB537935A (en) * 1939-07-03 1941-07-14 Renato Finzi Contini Crossed strip insulating structure for concentric cables
BE480485A (fr) * 1945-09-07
GB707966A (en) * 1950-01-26 1954-04-28 Rolls Royce Improvements in or relating to articles consisting essentially of a polymer of tetrafluoroethylene and to the manufacture thereof
DE972318C (de) * 1952-12-11 1959-07-02 Telefunken Gmbh Brueckenanordnung fuer sehr kurze elektrische Wellen
GB1030134A (en) * 1962-09-28 1966-05-18 Furukawa Electric Co Ltd Coaxial cables
DE1248761B (fr) * 1962-11-20
GB1053155A (fr) * 1964-04-30
DE1640696A1 (de) * 1967-05-26 1970-10-29 Kabel Metallwerke Ghh Koaxiales Hochfrequenzkabel mit Hohlraumisolierung
GB1185232A (en) * 1967-09-07 1970-03-25 British Insulated Callenders Improvements in or relating to Coaxial Cables for the Transmission of High Frequency Electric Currents
GB1278219A (en) * 1971-01-28 1972-06-21 Standard Telephones Cables Ltd Cables
GB1390809A (en) * 1972-08-05 1975-04-16 Marconi Co Ltd Electrical networks for use at high frequencies
FR2374153A1 (fr) * 1976-12-20 1978-07-13 Ici Ltd Procede pour la production d'objets en polytetrafluorethylene poreux
GB1605120A (en) * 1978-04-11 1981-12-16 Marconi Co Ltd Electrical networks for use at high frequencies
US4463329A (en) * 1978-08-15 1984-07-31 Hirosuke Suzuki Dielectric waveguide
US4427953A (en) * 1981-11-16 1984-01-24 Hughes Aircraft Company Microwave diplexer
US5406235A (en) * 1990-12-26 1995-04-11 Tdk Corporation High frequency device
GB9510829D0 (en) * 1995-05-22 1995-07-19 Racal Mesl Radar Limited Radio frequency coupler
WO2004079795A2 (fr) * 2003-03-04 2004-09-16 Rohm And Haas Electronic Materials, L.L.C. Microstructures a guide d'ondes coaxial et leur procede de formation
US6882242B2 (en) * 2003-06-19 2005-04-19 Radio Frequency Systems, Inc. Frequency selective low loss transmission line system
AT501770B1 (de) * 2005-04-07 2007-10-15 Michel Wolfgang Ing Verfahren zur herstellung einer profilierten bahn aus polytetrafluorethylen
DE202006010828U1 (de) * 2006-05-15 2006-10-12 Elringklinger Ag Vorrichtung zum Herstellen einer profilierten Folie sowie mit der Vorrichtung hergestellte Folie
JP2008182340A (ja) * 2007-01-23 2008-08-07 Ngk Spark Plug Co Ltd ダイプレクサ及びそれを用いたマルチプレクサ

Also Published As

Publication number Publication date
ES2375681T3 (es) 2012-03-05
DE102007019447B4 (de) 2009-05-07
US20100148889A1 (en) 2010-06-17
DE102007019447A1 (de) 2008-11-13
EP2147477A1 (fr) 2010-01-27
CN101755363A (zh) 2010-06-23
WO2008131741A1 (fr) 2008-11-06
ATE531094T1 (de) 2011-11-15

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