EP2084123B1 - Anthracene derivative, and light-emitting element, light-emitting device, electronic device using anthracene derivative - Google Patents

Anthracene derivative, and light-emitting element, light-emitting device, electronic device using anthracene derivative Download PDF

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EP2084123B1
EP2084123B1 EP07742331.7A EP07742331A EP2084123B1 EP 2084123 B1 EP2084123 B1 EP 2084123B1 EP 07742331 A EP07742331 A EP 07742331A EP 2084123 B1 EP2084123 B1 EP 2084123B1
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light
carbon atoms
emitting element
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aryl group
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French (fr)
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EP2084123A4 (en
EP2084123A1 (en
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Masakazu Egawa
Harue Nakashima
Sachiko Kawakami
Tsunenori Suzuki
Ryoji Nomura
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Definitions

  • the present invention relates to an anthracene derivative, and a light-emitting element, a light-emitting device, and an electronic device each using an anthracene derivative.
  • An organic compound can take various structures compared with an inorganic compound, and it is possible to synthesize a material having various functions by appropriate molecular-design of an organic compound. Owing to these advantages, photo electronics and electronics, which employ a functional organic material, have been attracting attention in recent years.
  • a solar cell, a light-emitting element, an organic transistor, and the like can be exemplified as an electronic device using an organic compound as a functional organic material. These devices take advantage of electrical properties and optical properties of the organic compound. Among them, in particular, a light-emitting element has been making remarkable progress.
  • the light emission mechanism of a light-emitting element is as follows: when a voltage is applied between a pair of electrodes which interpose a light-emitting layer, electrons injected from a cathode and holes injected from an anode are recombined in the light-emitting layer to form a molecular exciton, and energy is released to emit light when the molecular exciton relaxes to the ground state.
  • excited states a singlet excited state and a triplet excited state are known, and light emission is considered to be possible through either of these excited states.
  • Patent Document 1 United States Patent Application Laid-Open No. 2005-0260442 , an anthracene derivative exhibiting green light emission is disclosed.
  • Patent Document 1 only the PL spectrum of the anthracene derivative is described, and the device performance is not disclosed when the anthracene derivative was applied to a light-emitting element.
  • Patent Document 2 Japanese Published Patent Application No. 2004-91334 , a light-emitting element using an anthracene derivative as a charge transporting layer is mentioned. However, in Patent Document 2, there is no description on the lifetime of the light-emitting element.
  • Patent Document 3 discloses anthracene derivatives comprising two amino groups linked by a second anthracenyl moiety.
  • an object of the present invention is to provide a novel anthracene derivative.
  • an object is to provide a light-emitting element with high luminous efficiency as well as a light-emitting element with a long lifetime.
  • Another object is to provide a light-emitting device and an electronic device each having a long lifetime by using these light-emitting elements.
  • One feature of the present invention is an anthracene derivative represented by General Formula (2).
  • each of Ar 1 and Ar 2 represents an aryl group having 6 to 25 carbon atoms
  • A represents a substituent represented by any of General Formulae (2-1) to (2-3).
  • Ar 11 represents an aryl group having 6 to 25 carbon atoms
  • each of R 11 to R 24 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 15 carbon atoms
  • Ar 21 represents an aryl group having 6 to 25 carbon atoms
  • R 31 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 25 carbon atoms
  • each of R 33 to R 37 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 15 carbon atoms
  • Ar 31 represents an aryl group having 6 to 25 carbon atoms
  • each of R 41 and R 42 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, and
  • Yet another feature of the present invention is an anthracene derivative represented by General Formula (3).
  • each of Ar 1 and Ar 2 represents an aryl group having 6 to 25 carbon atoms
  • A represents any substituent represented by General Formulae (3-1) to (3-3).
  • Ar 11 represents an aryl group having 6 to 25 carbon atoms
  • each of R 25 and R 26 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 15 carbon atoms
  • Ar 21 represents an aryl group having 6 to 25 carbon atoms
  • R 31 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 25 carbon atoms
  • Ar 31 represents an aryl group having 6 to 25 carbon atoms
  • each of R 41 and R 42 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 25 carbon atoms.
  • Still another feature of the present invention is an anthracene derivative represented by General Formula (4).
  • each of Ar 1 and Ar 2 represents an aryl group having 6 to 25 carbon atoms
  • A represents any substituent represented by General Formulae (4-1) to (4-3).
  • Ar 11 represents any of phenyl group, 1-naphthyl group, and 2-naphthyl group
  • each of R 25 and R 26 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 15 carbon atoms
  • Ar 21 represents any of phenyl group, 1-naphthyl group, and 2-naphthyl group
  • R 31 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 25 carbon atoms
  • Ar 31 represents any of a phenyl group, 1-naphthyl group, and 2-naphthyl group
  • each of R 41 and R 42 represents any of hydrogen, an alkyl group having 1 to 4 carbon
  • each of Ar 1 and Ar 2 is preferably a substituent represented by General Formula (11-1).
  • each of R 1 to R 5 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, a haloalkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 15 carbon atoms.
  • each of Ar 1 and Ar 2 is preferably a substituent represented by Structural Formula (11-2) or (11-3).
  • each of Ar1 and Ar2 is preferably a substituent represented by General Formula (11-4).
  • each of R 6 and R 7 represents any of an alkyl group having 1 to 4 carbon atoms and an aryl group having 6 to 15 carbon atoms.
  • each of Ar 1 and Ar 2 is preferably a substituent represented by Structural Formula (11-5) or (11-6).
  • Ar 1 and Ar 2 are preferably substituents having the same structure.
  • one feature of the present invention is an anthracene derivative represented by General Formula (6).
  • each of Ar 1 and Ar 2 represents an aryl group having 6 to 25 carbon atoms
  • A represents a substituent represented by any of General Formulae (6-1) to (6-3).
  • Ar 11 represents an aryl group having 6 to 25 carbon atoms
  • each of R 11 to R 24 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 15 carbon atoms
  • Ar 21 represents an aryl group having 6 to 25 carbon atoms
  • R 31 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 25 carbon atoms
  • each of R 33 to R 37 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 15 carbon atoms
  • Ar 31 represents an aryl group having 6 to 25 carbon atoms
  • each of R 41 and R 42 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, and
  • one feature of the present invention is an anthracene derivative represented by General Formula (7).
  • each of Ar 1 and Ar 2 represents an aryl group having 6 to 25 carbon atoms
  • A represents any substituent represented by General Formulae (7-1) to (7-3).
  • Ar 11 represents an aryl group having 6 to 25 carbon atoms
  • each of R 25 and R 26 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 15 carbon atoms
  • Ar 21 represents an aryl group having 6 to 25 carbon atoms
  • R 31 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 25 carbon atoms
  • Ar 31 represents an aryl group having 6 to 25 carbon atoms
  • each of R 41 and R 42 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 25 carbon atoms.
  • Yet another feature of the present invention is an anthracene derivative represented by General Formula (8).
  • each of Ar 1 and Ar 2 represents an aryl group having 6 to 25 carbon atoms
  • A represents any substituent represented by General Formulae (8-1) to (8-3).
  • Ar 11 represents any of phenyl group, 1-naphthyl group, and 2-naphthyl group
  • each of R 25 and R 26 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 15 carbon atoms
  • Ar 21 represents any of phenyl group, 1-naphthyl group, and 2-naphthyl group
  • R 31 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 25 carbon atoms
  • Ar 31 represents any of a phenyl group, 1-naphthyl group, and 2-naphthyl group
  • each of R 41 and R 42 represents any of hydrogen, an alkyl group having 1 to 4 carbon
  • each of Ar 1 and Ar 2 is preferably a substituent represented by General Formula (11-1).
  • each of R 1 to R 5 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, a haloalkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 15 carbon atoms.
  • each of Ar 1 and Ar 2 is preferably a substituent represented by Structural Formula (11-2) or (11-3).
  • each of Ar 1 and Ar 2 is preferably a substituent represented by General Formula (11-4).
  • each of R 6 and R 7 represents any of an alkyl group having 1 to 4 carbon atoms and an aryl group having 6 to 15 carbon atoms.
  • each of Ar 1 and Ar 2 is preferably a substituent represented by Structural Formula (11-5) or (11-6).
  • Ar 1 and Ar 2 are preferably substituents having the same structure.
  • one feature of the present invention is a light-emitting element using the foregoing anthracene derivative.
  • the feature of the present invention is a light-emitting element having the anthracene derivative between a pair of electrodes.
  • Another feature of the present invention is a light-emitting element having a light-emitting layer between a pair of electrodes, in which the light-emitting layer includes the abovementioned anthracene derivative. It is particularly preferable to use the abovementioned anthracene derivative as a light-emitting substance. That is, it is preferable to have a structure in which the anthracene derivative emits light.
  • the light-emitting device of the present invention has the abovementioned light-emitting element.
  • the light-emitting element comprises a layer including a light-emitting substance between a pair of electrodes, and said layer including a light-emitting substance comprises the foregoing anthracene derivative.
  • the light-emitting device of the present invention also possesses a controller for controlling light emission of the light-emitting element.
  • the light-emitting device in this specification includes an image display device, a light-emitting device, and a light source (including a lighting device).
  • the light-emitting device also includes a module in which a connector such as an FPC (Flexible Printed Circuit), a TAB (Tape Automated Bonding) tape, or a TCP (Tape Carrier Package) is attached to a panel, a module in which a printed wiring board is provided at an end of a TAB tape or a TCP, and a module in which an IC (Integrated Circuit) is directly mounted on the light-emitting device by a COG (Chip On Glass) method.
  • a connector such as an FPC (Flexible Printed Circuit), a TAB (Tape Automated Bonding) tape, or a TCP (Tape Carrier Package) is attached to a panel
  • a module in which a printed wiring board is provided at an end of a TAB tape or a TCP and a module in which an IC (Integrated Circuit) is directly mounted on the light-emitting device by a COG (Chip On Glass) method.
  • COG
  • an electronic device using the light-emitting element of the present invention in its display portion is also included in the category of the present invention. Therefore, the electronic device of the present invention has a display portion, and the display portion is equipped with the above-described light-emitting element and a controller for controlling light emission of the light-emitting element.
  • An anthracene derivative of the present invention has high luminous efficiency. Therefore, by using the anthracene derivative of the present invention in a light-emitting element, a light-emitting element with high luminous efficiency can be obtained. Also, by using the anthracene derivative of the present invention in a light-emitting element, a light-emitting element with a long lifetime can be obtained.
  • an anthracene derivative of the present invention a light-emitting device and an electronic device each with a long lifetime can be obtained.
  • the anthracene derivative of the present invention is the anthracene derivative represented by General Formula (2).
  • each of Ar 1 and Ar 2 represents an aryl group having 6 to 25 carbon atoms
  • A represents a substituent represented by any of General Formulae (2-1) to (2-3).
  • Ar 11 represents an aryl group having 6 to 25 carbon atoms
  • each of R 11 to R 24 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 15 carbon atoms
  • Ar 21 represents an aryl group having 6 to 25 carbon atoms
  • R 31 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 25 carbon atoms
  • each of R 33 to R 37 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 15 carbon atoms
  • Ar 31 represents an aryl group having 6 to 25 carbon atoms
  • each of R 41 and R 42 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, and
  • anthracene derivative represented by General Formula (2) the anthracene derivative represented by General Formula (3) is preferable.
  • each of Ar 1 and Ar 2 represents an aryl group having 6 to 25 carbon atoms
  • A represents any substituent represented by General Formulae (3-1) to (3-3).
  • Ar 11 represents an aryl group having 6 to 25 carbon atoms
  • each of R 25 and R 26 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 15 carbon atoms
  • Ar 21 represents an aryl group having 6 to 25 carbon atoms
  • R 31 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 25 carbon atoms
  • Ar 31 represents an aryl group having 6 to 25 carbon atoms
  • each of R 41 and R 42 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 25 carbon atoms.
  • anthracene derivative represented by General Formula (2) the anthracene derivative represented by General Formula (4) is preferable.
  • each of Ar 1 and Ar 2 represents an aryl group having 6 to 25 carbon atoms
  • A represents any substituent represented by General Formulae (4-1) to (4-3).
  • Ar 11 represents any of a phenyl group, a 1-naphthyl group, and a 2-naphthyl group
  • each of R 25 and R 26 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 15 carbon atoms
  • Ar 21 represents any of phenyl group, 1-naphthyl group, and 2-naphthyl group
  • R 31 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 25 carbon atoms
  • Ar 31 represents any of a phenyl group, a 1-naphthyl group, and a 2-naphthyl group
  • each of R 41 and R 42 represents any of hydrogen, an
  • each of Ar 1 and Ar 2 is preferably a substituent represented by General Formula (11-1).
  • each of R 1 to R 5 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, a haloalkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 15 carbon atoms.
  • each of Ar 1 and Ar 2 is preferably a substituent represented by Structural Formula (11-2) or (11-3).
  • each of Ar 1 and Ar 2 is preferably a substituent represented by General Formula (11-4).
  • each of R 6 and R 7 represents an alkyl group having 1 to 4 carbon atoms.
  • each of Ar 1 and Ar 2 is preferably a substituent represented by Structural Formula (11-5) or (11-6).
  • Ar 1 and Ar 2 are preferably substituents having the same structure.
  • A preferably bonds at the 2-position of the anthracene skeleton. By bonding at the 2-position, steric hindrance with each of Ar 1 and Ar 2 is reduced.
  • each of Ar 1 and Ar 2 represents an aryl group having 6 to 25 carbon atoms
  • A represents a substituent represented by any of General Formulae (6-1) to (6-3).
  • Ar 11 represents an aryl group having 6 to 25 carbon atoms
  • each of R 11 to R 24 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 15 carbon atoms
  • Ar 21 represents an aryl group having 6 to 25 carbon atoms
  • R 31 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 25 carbon atoms
  • each of R 33 to R 37 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 15 carbon atoms
  • Ar 31 represents an aryl group having 6 to 25 carbon atoms
  • each of R 41 and R 42 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, and
  • anthracene derivative represented by General Formula (7) is preferable.
  • each of Ar 1 and Ar 2 represents an aryl group having 6 to 25 carbon atoms
  • A represents any substituent represented by General Formulate (7-1) to (7-3).
  • Ar 11 represents an aryl group having 6 to 25 carbon atoms
  • each of R 25 and R 26 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 15 carbon atoms
  • Ar 21 represents an aryl group having 6 to 25 carbon atoms
  • R 31 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 25 carbon atoms
  • Ar 31 represents an aryl group having 6 to 25 carbon atoms
  • each of R 41 and R 42 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 25 carbon atoms.
  • anthracene derivative is represented by General Formula (8).
  • each of Ar 1 and Ar 2 represents an aryl group having 6 to 25 carbon atoms
  • A represents any substituent represented by General Formulae (8-1) to (8-3).
  • Ar 11 represents any of phenyl group, 1-naphthyl group, and 2-naphthyl group
  • each of R 25 and R 26 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 15 carbon atoms
  • Ar 21 represents any of phenyl group, 1-naphthyl group, and 2-naphthyl group
  • R 31 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 25 carbon atoms
  • Ar 31 represents any of a phenyl group, a 1-naphthyl group, and a 2-naphthyl group
  • each of R 41 and R 42 represents any of hydrogen, an alkyl group having 1
  • each of Ar 1 and Ar 2 is preferably a substituent represented by General Formula (11-1).
  • each of R 1 to R 5 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, a haloalkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 15 carbon atoms.
  • each of Ar 1 and Ar 2 is preferably a substituent represented by Structural Formula (11-2) or (11-3).
  • each of Ar 1 and Ar 2 is preferably a substituent represented by General Formula (11-4).
  • each of R 6 and R 7 represents an alkyl group having 1 to 4 carbon atoms.
  • each of Ar 1 and Ar 2 is preferably a substituent represented by General Formula (11-5) or (11-6).
  • Ar 1 and Ar 2 are preferably substituents having the same structure.
  • anthracene derivative represented by General Formula (2) As specific examples of the anthracene derivative represented by General Formula (2), the anthracene derivatives represented by Structural Formulae (101) to (118), Structural Formulae (201) to (218), and Structural Formulae (301) to (318) can be given. However, the present invention is not limited thereto.
  • the anthracene derivatives represented by Structural Formulae (101) to (118) are specific examples of General Formula (2) in the case where A is General Formula (1-1), and the anthracene derivatives represented by Structural Formulae (201) to (218) are specific examples of General Formula (2) in the case where A is General Formula (1-2). Also, the anthracene derivatives represented by Structural Formulae (301) to (318) are specific examples of General Formula (2) in the case where A is General Formula (1-3).
  • anthracene derivative of the present invention can be synthesized by conducting the synthesis reactions shown in following Reaction Schemes (A-1) to (A-5) and (B-1) to (B-3).
  • a compound including carbazole in a skeleton is reacted with a halogen or halide such as N -bromosuccinimide (NBS), N -iodosuccinimide (NIS), bromine (Br 2 ), potassium iodide (KI), or iodine (I 2 ) to synthesize a compound including 3-halogenated carbazole in a skeleton (Compound B), and then subjected to a coupling reaction with arylamine using a metal catalyst such as a palladium catalyst (Pd catalyst), thereby obtaining a compound C.
  • a halogen element (X) is preferably iodine or bromine.
  • R 31 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 25 carbon atoms.
  • R 32 represents an alkyl group having 1 to 4 carbon atoms, or an aryl group having 6 to 25 carbon atoms.
  • Ar 11 represents an aryl group having 6 to 25 carbon atoms.
  • a compound including carbazole in a skeleton (Compound D) is reacted with a dihalide of an aromatic compound to synthesize a compound including N-(aryl halide)carbazole in a skeleton (Compound E), and Compound E is subjected to a coupling reaction with arylamine using a metal catalyst such as palladium, thereby obtaining Compound F.
  • a halogen element (X 1 and X 2 ) of the dihalide of an aromatic compound is preferably iodine or bromine.
  • X 1 and X 2 may be the same or different from each other.
  • Each of R 41 and R 42 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 25 carbon atoms.
  • ⁇ represents an arylene group having 6 to 25 carbon atoms.
  • Ar 31 represents an aryl group having 6 to 25 carbon atoms.
  • a halide of anthraquinone (Compound H) is synthesized by the Sandmyer reaction of 1-aminoanthraquinone or 2-aminoanthraquinone (Compound G).
  • the halide of anthraquinone (Compound H) is reacted with aryllithium to synthesize a diol of a 9,10-dihydroanthracene derivative (Compound I).
  • X represents a halogen element.
  • each of Ar 1 and Ar 2 represents an aryl group having 6 to 25 carbon atoms.
  • An anthracene derivative can be synthesized by the reaction shown in Synthetic Scheme (B-1) using Compound J prepared in Synthetic Scheme (A-5).
  • the anthracene derivative of the present invention represented by General Formula (1-1a) can be synthesized.
  • each of Ar 1 and Ar 2 represents an aryl group having 6 to 25 carbon atoms
  • each of Ar 11 to Ar 13 represents an aryl group having 6 to 25 carbon atoms
  • ⁇ represents an arylene group having 6 to 25 carbon atoms. Note that the compound represented by General Formula (1-1a) corresponds to the case where A in General Formula (1) is General Formula (1-1).
  • An anthracene derivative of the present invention can be synthesized by a reaction shown in Synthetic Scheme (B-2), using Compound C prepared according to Synthetic Scheme (A-1) and Compound J provided by Synthetic Scheme (A-5).
  • the coupling reaction between Compound C and Compound J using a metal catalyst such as a palladium catalyst gives the anthracene derivative of the present invention represented by General Formula (1-2a).
  • each of Ar 1 and Ar 2 represents an aryl group having 6 to 25 carbon atoms;
  • Ar 21 represents an aryl group having 6 to 25 carbon atoms;
  • R 31 represents any of hydrogen, an alkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 25 carbon atoms;
  • R 32 represents either of an alkyl group having 1 to 4 carbon atoms and an aryl group having 6 to 25 carbon atoms.
  • An anthracene derivative can be synthesized by a reaction shown in Synthetic Scheme (B-3), using Compound, F formed in Synthetic Scheme (A-2) and Compound J prepared by Synthetic Scheme (A-5).
  • the coupling reaction between Compound F and Compound J using a metal catalyst such as a palladium catalyst leads to the formation of the anthracene derivative of the present invention represented by General Formula (1-3a).
  • each of Ar 1 and Ar 2 represents an aryl group having 6 to 25 carbon atoms;
  • Ar 31 represents an aryl group having 6 to 25 carbon atoms;
  • ⁇ represents an arylene group having 6 to 25 carbon atoms; and
  • each of R 41 and R 42 represents hydrogen, an alkyl group having 1 to 4 carbon atoms, and an aryl group having 6 to 25 carbon atoms.
  • the compound represented by General Formula (1-3a) corresponds to the case where A in foregoing General Formula (1) is General Formula (1-3).
  • An anthracene derivative of the present invention has high luminous quantum yield, and emits blue green to yellow green light. Therefore, the anthracene derivative of the present invention can be favorably used for a light-emitting element.
  • anthracene derivatives of the present invention are capable of green light emission with high efficiency, they can be favorably used for a full-color display. Further, the ability of the anthracene derivative of the present invention to achieve green light emission with a long lifetime allows their application in a full-color display.
  • the anthracene derivative of the present invention can provide green light emission with high efficiency, white light emission can be obtained by combining with another light emissive material.
  • white light emission can be obtained by combining with another light emissive material.
  • red (R), green (G), and blue (B) emissions which exhibit the corresponding NTSC chromaticity coordinates
  • anthracene derivative of the present invention only one substituent A is bonded to an anthracene skeleton as represented by General Formula (2). Consequently, compared with a disubstituted compound in which two A units are bonded to the anthrace skeleton, the anthracene derivative of the present invention is possible to exhibit light emission with a short wavelength. Further, since the molecular weight of the disubstituted compound is very high, film formation by an evapolariton method is difficult; however, film formation by an evaporation method is possible with the anthracene derivative of the present invention. In addition, synthesis of a disubstituted compound requires higher cost than that of the anthracene derivative of the present invention which is monosubstituted.
  • the inventors found that, when the anthracene derivatives are applied to a light-emitting element, the use of the monosubstituted anthracene derivative privides a longer lifetime than that of the disubstituted one. Consequently, by applying the anthracene derivative of the present invention to a light-emitting element, a light-emitting element with a long lifetime can be obtained.
  • the anthracene derivative of the present invention is stable even if they are subjected to the oxidation-reduction cycle repeatedly. Consequently, by using the anthracene derivative of the present invention in a light-emitting element, a light-emitting element with a long lifetime can be obtained.
  • a light-emitting element of the present invention has a plurality of layers between a pair of electrodes.
  • the plurality of layers are a combination of layers formed of a substance having a high carrier injecting property and a substance having a high carrier transporting property which are stacked so that a light-emitting region is formed in a region away from the electrodes, that is, recombination of carriers is performed in an area away from the electrodes.
  • a light-emitting element includes a first electrode 102, a first layer 103, a second layer 104, a third layer 105, and a fourth layer 106 which are sequentially stacked over the first electrode 102, and a second electrode 107 provided thereover. It is to be noted that description will be made below in this embodiment mode with an assumption that the first electrode 102 functions as an anode and the second electrode 107 functions as a cathode.
  • a substrate 101 is used as a support of the light-emitting element.
  • the substrate 101 glass, plastic, or the like can be used, for example. It is to be noted that another material may be used as long as it functions as a support in a manufacturing process of the light-emitting element.
  • a metal, an alloy, an electrically conductive compound, a mixture thereof, or the like having a high work function is preferably used.
  • a metal, an alloy, an electrically conductive compound, a mixture thereof, or the like having a high work function (specifically, 4.0 eV or more) is preferably used.
  • ITO Indium Tin Oxide
  • indium oxide-tin oxide including silicon or silicon oxide indium oxide-zinc oxide
  • IZO Indium Zinc Oxide
  • IWZO indium Zinc Oxide
  • these conductive metal oxide films are generally formed by sputtering, they may be formed by applying a sol-gel method or the like.
  • a film of indium oxide-zinc oxide can be formed by a sputtering method using a target in which 1 to 20 wt% of zinc oxide is added to indium oxide.
  • a film of indium oxide including tungsten oxide and zinc oxide can be formed by a sputtering method using a target in which 0.5 to 5 wt% of tungsten oxide and 0.1 to 1 wt% of zinc oxide are included in indium oxide.
  • Au gold
  • platinum Pt
  • Ni nickel
  • tungsten W
  • Cr chromium
  • Mo molybdenum
  • Fe iron
  • Co cobalt
  • Cu copper
  • palladium Pd
  • a nitride of a metal such as titanium nitride: TiN
  • the first layer 103 is a layer including a substance having a high hole injecting property. Molybdenum oxide (MoOx), vanadium oxide (VOx), ruthenium oxide (RuOx), tungsten oxide (WOx), manganese oxide (MnOx), or the like can be used.
  • the first layer 103 can be formed using phthalocyanine (abbreviation: H 2 Pc); a phthalocyanine-based compound such as copper phthalocyanine (CuPc); an aromatic amine compound such as 4,4'-bis[ N -(4-diphenylaminophenyl)- N -phenylamino]biphenyl (abbreviation: DPAB) or 4,4'-bis( N - ⁇ 4-[ N -(3-methylphenyl)- N -phenylamino]phenyl ⁇ - N -phenylamino)biphenyl (abbreviation: DNTPD); or a high molecular weight material such as poly(ethylene dioxythiophene)/poly(styrenesulfonic acid) (PEDOT/PSS), or the like.
  • DPAB 4,4'-bis[ N -(4-diphenylaminophenyl)- N -phenylamino]biphenyl
  • a composite material formed by composing an organic compound and an inorganic compound can be used for the first layer 103.
  • a composite material including an organic compound and an inorganic compound having an electron accepting property with respect to the organic compound has an excellent hole injecting property and hole transporting property because the electron transfer takes place between the organic compound and the inorganic compound, increasing the carrier density.
  • the first layer 103 can achieve an ohmic contact with the first electrode 102; therefore, a material of the first electrode can be selected regardless of work function.
  • an oxide of a transition metal is preferably used.
  • oxides of metals belonging to Groups 4 to 8 in the periodic table can be given.
  • vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide because of their high electron accepting properties.
  • molybdenum oxide is particularly preferable because it is stable under air, has a low moisture absorption property, and is easily handled.
  • organic compound used for the composite material various compounds such as an aromatic amine compound, a carbazole derivative, an aromatic hydrocarbon, and a high molecular weight compound (such as oligomer, dendrimer, or polymer) can be used.
  • the organic compound used for the composite material is preferably an organic compound having a high hole transporting property. Specifically, a substance having a hole mobility of greater than or equal to 10 -6 cm 2 /Vs is preferably used. However, other materials than these materials may also be used as long as the hole transporting properties thereof are higher than the electron transporting properties thereof.
  • the organic compounds which can be used for the composite material will be specifically shown below.
  • the following can be represented as the aromatic amine compound: N,N '-di( p -tolyl)- N,N '-diphenyl- p -phenylenediamine (abbreviation: DTDPPA); 4,4'-bis[ N -(4-diphenylaminophenyl)- N -phenylamino]biphenyl (abbreviation: DPAB); 4,4'-bis( N - ⁇ 4-[ N '-(3-methylphenyl)- N '-phenylamino]phenyl ⁇ - N -phenylamino)biphenyl (abbreviation: DNTPD); 1,3,5-tris[ N -(4-diphenylaminophenyl)- N -phenylamino]benzene (abbreviation: DPA3B); and the like.
  • DTDPPA 4,4'-bis[ N -(4-diphenylaminophenyl)-
  • carbazole derivatives which can be used for the composite material, the following can be provided specifically: 3-[ N -(9-phenylcarbazol-3-yl)- N -phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1); 3,6-bis[ N -(9-phenylcarbazol-3-yl)- N -phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2); 3-[ N -(1-naphtyl)- N -(9-phenylcarbazol-3-yl)amino]-9-phenylcarbazole (abbreviation: PCzPCN1); and the like.
  • PCzPCA1 N -(9-phenylcarbazol-3-yl)- N -phenylamino]-9-phenylcarbazole
  • PCzPCN1 3-[ N -(1-naphtyl)-
  • carbazole derivative which can be used for the composite material
  • CBP 4,4'-di(N-carbazolyl)biphenyl
  • TCPB 1,3,5-tris[4-( N -carbazolyl)phenyl]benzene
  • CzPA 9-[4-( N -carbazolyl)]phenyl-10-phenylanthracene
  • CzPA 1,4-bis[4-( N -carbazolyl)phenyl]-2,3,5,6-tetraphenylbenzene
  • aromatic hydrocarbon which can be used for the composite material
  • the following can be given for example: 2- tert -butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t -BuDNA); 2- tert -butyl-9,10-di(1-naphthyl)anthracene; 9,10-bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA); 2- tert -butyl-9,10-bis(4-phenylphenyl)anthracene (abbreviation: t -BuDBA); 9,10-di(2-naphthyl)anthracene (abbreviation: DNA); 9,10-diphenylanthracene (abbreviation: DPAnth); 2- tert -butylanthracene (abbreviation: t -BuAnth); 9,10-bis(4
  • pentacene coronene, or the like can also be used.
  • an aromatic hydrocarbon which has a hole mobility of greater than or equal to 1 ⁇ 10 -6 cm 2 /Vs and which has 14 to 42 carbon atoms is more preferable.
  • the aromatic hydrocarbon which can be used for the composite material may have a vinyl moiety.
  • the aromatic hydrocarbon having a vinyl group the following are given for example: 4,4'-bis(2,2-diphenylvinyl)biphenyl (abbreviation: DPVBi); 9,10-bis[4-(2,2-diphenylvinyl)phenyl]anthracene (abbreviation: DPVPA); and the like.
  • PVK poly( N -vinylcarbazole)
  • PVTPA poly(4-vinyltriphenylamine)
  • a substance having a high hole transporting property specifically, an aromatic amine compound (that is, a compound having a benzene ring-nitrogen bond) is preferable.
  • an aromatic amine compound that is, a compound having a benzene ring-nitrogen bond
  • NPB 4,4'-bis[ N -(3-methylphenyl)- N -phenylamino]biphenyl, derivatives thereof such as 4,4'-bis[ N -(1-napthyl)- N -phenylamino]biphenyl (hereinafter referred to as NPB), and star burst aromatic amine compounds such as 4,4',4"-tris( N,N -diphenyl-amino)triphenylamine, and 4,4',4"-tris[ N '-(3-methylphenyl)- N -phenylamino]triphenylamine can be given.
  • the second layer 104 is not limited to a single layer, and a mixed layer of the aforementioned substances, or a stacked layer which comprises two or more layers each including the aforementioned substance may be used.
  • the third layer 105 is a layer including a light-emitting substance.
  • the third layer 105 includes the anthracene derivative of the present invention described in Embodiment Mode 1.
  • the anthracene derivative of the present invention can favorably be applied to a light-emitting element as a light-emitting substance since the anthracene derivative of the present invention exhibits light emission of blue green to yellow green.
  • a substance having a high electron transporting property can be used.
  • a layer including a metal complex or the like having a quinoline or benzoquinoline moiety such as tris(8-quinolinolato)aluminum (abbreviation: Alq), tris(4-methyl-8-quinolinolato)aluminum (abbreviation: Almq 3 ), bis(10-hydroxybenzo[ h ]quinolinato)beryllium (abbreviation: BeBq 2 ), or bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum (abbreviation: BAlq) can be used.
  • Alq tris(8-quinolinolato)aluminum
  • Almq 3 tris(4-methyl-8-quinolinolato)aluminum
  • BeBq 2 bis(10-hydroxybenzo[ h ]quinolinato)beryllium
  • BAlq bis(2-methyl-8
  • a metal complex or the like having an oxazole-based or thiazole-based ligand such as bis[2-(2-hydroxyphenyl)benzoxazolato]zinc (abbreviation: Zn(BOX) 2 ) or bis[2-(2-hydroxyphenyl)-benzothiazolato]zinc (abbreviation: Zn(BTZ) 2 ) can be used.
  • 2-(4-biphenylyl)-5-(4- tert -butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis[5-( p - tert -butylphenyl)-1,3,4-oxadiazole-2-yl]benzene (abbreviation: OXD-7), 3-(4-biphenylyl)-4-phenyl-5-(4- tert -butylphenyl)-1,2,4-triazole (abbreviation: TAZ), bathophenanthroline (abbreviation: BPhen), bathocuproine (abbreviation: BCP), or the like can also be used.
  • PBD 2-(4-biphenylyl)-5-(4- tert -butylphenyl)-1,3,4-oxadiazole
  • OXD-7 1,3-bis[5-( p - tert -but
  • the substances described here mainly are substances each having an electron mobility of greater than or equal to 10 -6 cm 2 /Vs.
  • the electron transporting layer may be formed using other materials than those described above as long as the materials have higher electron transporting properties than hole transporting properties.
  • the electron transporting layer is not limited to a single layer, and two or more layers in which each layer is made of the aforementioned material may be stacked.
  • a metal, an alloy, an electrically conductive compound, a mixture thereof, or the like having a low work function (specifically, 3.8 eV or less) is preferably used.
  • a cathode material an element belonging to Group 1 or Group 2 in the periodic table, that is, an alkali metal such as lithium (Li) or cesium (Cs), an alkaline earth metal such as magnesium (Mg), calcium (Ca), or strontium (Sr), an alloy including these metals (MgAg, AlLi) can be employed.
  • a rare earth metal such as europium (Eu) or ytterbium (Yb), an alloy including these rare earth metals, or the like is also suitable.
  • various conductive materials such as Al, Ag, ITO, or ITO including silicon or silicon oxide can be used for the second electrode 107 regardless of the magnitude of the work function.
  • an alkali metal, an alkaline earth metal, or a compound thereof such as lithium fluoride (LiF), cesium fluoride (CsF), or calcium fluoride (CaF 2 ) can be used.
  • a layer which contains substance having an electron transporting property and an alkali metal, an alkaline earth metal, or a compound thereof Alq including magnesium (Mg) for example
  • Mg magnesium
  • first layer 103 the second layer 104, the third layer 105, and the fourth layer 106.
  • evaporation method an ink-jet method, a spin coating method, or the like may be used.
  • each electrode or each layer may be formed by a different film formation method.
  • the light-emitting element of the present invention has a structure in which a light-emitting region is formed in the third layer 105.
  • one or both of the first electrode 102 and the second electrode 107 is/are formed using an electrode having a light transmitting property.
  • first electrode 102 has a light transmitting property
  • light emission is extracted from a substrate side through the first electrode 102 as shown in FIG. 1A .
  • second electrode 107 is formed using the electrode having a light transmitting property
  • light emission is extracted from the side opposite to the substrate through the second electrode 107 as shown in FIG. 1B .
  • each of the first electrode 102 and the second electrode 107 is the electrode having a light transmitting property
  • light emission is extracted from both of the substrate side and the side opposite to the substrate through the first electrode 102 and the second electrode 107, as shown in FIG. 1C .
  • a structure of layers provided between the first electrode 102 and the second electrode 107 is not limited to the above-described structure.
  • a structure other than the above-described structure may be used as long as the light-emitting region, in which holes and electrons are recombined, is located away from the first electrode 102 and the second electrode 107, which permits preventing the quenching phenomenon promoted by the electrodes.
  • a stacked structure of the layer is not strictly limited to the abovementioned structure, and a layer formed using a substance having a high electron transporting property, a substance having a high hole transporting property, a substance having a high electron injecting property, a substance having a high hole injecting property, a bipolar substance (substance having a high electron transporting property and a high hole transporting property), a hole blocking material, or the like may be freely combined with the anthracene derivative of the present invention.
  • a light-emitting element shown in FIG. 2 has a structure in which a first electrode 302 serving as a cathode, a first layer 303 formed using a substance having a high electron transporting property, a second layer 304 including a light-emitting substance, a third layer 305 formed using a substance having a high hole transporting property, a fourth layer 306 formed using a substance having a high hole injecting property, and a second electrode 307 serving as an anode are sequentially stacked over a substrate 301.
  • a light-emitting element is fabricated over a substrate made of glass, plastic, or the like.
  • a passive-type light-emitting device can be manufactured.
  • a thin film transistor (TFT) may be formed over a substrate made of glass, plastic, or the like, and the light-emitting elements may be manufactured over an electrode electrically connected to the TFT.
  • an active matrix light-emitting device can be manufactured, in which driving of the light-emitting element is controlled by the TFT.
  • the structure of the TFT is not strictly limited, and the TFT may be a staggered TFT or an inverted staggered TFT.
  • Crystallinity of a semiconductor used for the TFT is also not limited, and an amorphous semiconductor or a crystalline semiconductor may be used.
  • a driving circuit formed over a TFT substrate may be formed using an N-type TFT and a P-type TFT, or may be formed using any one of an N-type TFT and a P-type TFT.
  • an anthracene derivative of the present invention can be used for a light-emitting layer without adding any other light-emitting substance, since said anthracene derivative exhibits light emission of blue green to yellow green.
  • the anthracene derivative of the present invention has high luminous efficiency, a light-emitting element with high luminous efficiency can be obtained by using the anthracene derivative of the present invention in a light-emitting element. Also, by using the anthracene derivative of the present invention in a light-emitting element, a light-emitting element with a long lifetime can be obtained.
  • anthracene derivatives of the present invention are capable of green light emission with high efficiency, they can be favorably used for a full-color display. Further, the ability of the anthracene derivative of the present invention to achieve green light emission with a long lifetime allows their application in a full-color display.
  • the light-emitting element using the anthracene derivative of the present invention is capable of green light emission with high efficiency
  • white light emission can be obtained by combining with another light emission material.
  • red (R), green (G), and blue (B) emissions which exhibit the corresponding NTSC chromaticity coordinates
  • the third layer 105 shown in FIGS. 1A to 1C is formed by dispersing an anthracene derivative of the present invention into another substance, whereby light emission can be obtained from the anthracene derivative of the present invention. Since the anthracene derivative of the present invention exhibits light emission of blue green to yellow green, a light-emitting element exhibiting light emission of blue green to yellow green can be obtained.
  • various materials can be used as a substance in which the anthracene derivative of the present invention is dispersed.
  • CBP 4,4'-bis( N -carbazolyl)-biphenyl
  • TPBI 2,2',2"-(1,3,5-benzenetri-yl)-tris[1-phenyl-1 H -benzimidazole]
  • TPBI 9,10-di(2-naphthyl)anthracene
  • DNA 9,10-di(2-naphthyl)anthracene
  • t -BuDNA 2- tert -butyl-9,10-di(2-naphthyl)anthracene
  • CzPA 9-[4-( N -carbazolyl)]phenyl-10-phenylanthracene
  • the anthracene derivative of the present invention has high luminous efficiency, a light-emitting element with high luminous efficiency can be obtained by using the anthracene derivative of the present invention in a light-emitting element. Also, by using the anthracene derivative of the present invention in a light-emitting element, a light-emitting element with a long lifetime can be obtained.
  • a light-emitting element using the anthracene derivative of the present invention is capable of green light emission with high efficiency, the light-emitting element can be favorably used for a full-color display.
  • the light-emitting element using the anthracene derivative of the present invention is capable of green light emission with a long lifetime, it can be favorably used for a full-color display.
  • the anthracene derivative of the present invention can provide green light emission with high efficiency, white light emission can be obtained by combining with another light emissive material.
  • white light emission can be obtained by combining with another light emissive material.
  • red (R), green (G), and blue (B) emissions which exhibit the corresponding NTSC chromaticity coordinates
  • Embodiment Mode 2 the structure shown in Embodiment Mode 2 can be appropriately used.
  • the third layer 105 shown in FIGS. 1A to 1C is formed by dispersing a light-emitting substance in the anthracene derivative of the present invention, whereby light emission from the light-emitting substance can be obtained.
  • anthracene derivative of the present invention is used as a material in which another light-emitting substance is dispersed, a light emission color derived from the light-emitting substance can be obtained. Further, a mixed color resulted from the anthracene derivative of the present invention and the light-emitting substance dispersed in the anthracene derivative can also be obtained.
  • various materials can be used as a light-emitting substance dispersed in the anthracene derivative of the present invention.
  • a fluorescence emitting substance that emits fluorescence such as 4-(dicyanomethylene)-2-methyl-6-( p -dimethylaminostyryl)-4 H -pyran (abbreviation: DCM1), 4-(dicyanomethylene)-2-methyl-6-(julolidine-4-yl-vinyl)-4 H -pyran (abbreviation: DCM2), N,N -dimethylquinacridone (abbreviation: DMQd), or rubrene can be used.
  • DCM1 4-(dicyanomethylene)-2-methyl-6-( p -dimethylaminostyryl)-4 H -pyran
  • DCM2 4-(dicyanomethylene)-2-methyl-6-(julolidine-4-yl-vinyl)-4 H -pyran
  • DMQd N,N -
  • a phosphorescence emitting substance that emits phosphorescence such as (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: Ir(Fdpq) 2 (acac)), 2,3,7,8,12,13,17,18-octaethyl-21 H ,23 H -porphyrinplatinum(II) (abbreviation: PtOEP), or the like can be used.
  • Embodiment Mode 2 the structure shown in Embodiment Mode 2 can be appropriately used.
  • an anthracene derivative of the present invention has a hole transporting property. Therefore, the layer including the anthracene derivative of the present invention can be used between the anode and the light-emitting layer. Specifically, the anthracene derivative of the present invention can be used in the first layer 103 and the second layer 104 described in Embodiment Mode 1.
  • the anthracene derivative of the present invention in a case of applying the anthracene derivative of the present invention as the first layer 103, it is preferable to compose the anthracene derivative of the present invention and an inorganic compound having an electron accepting property with respect to the anthracene derivative of the present invention.
  • carrier density of the first layer increases, which contributes to improvement of the hole injecting property and hole transporting property.
  • the first layer 103 can achieve an ohmic contact with the first electrode 102; therefore, a material of the first electrode can be selected regardless of work function.
  • an oxide of a transition metal is preferably used.
  • oxides of metals belonging to Groups 4 to 8 in the periodic table can be represented.
  • vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide because of their high electron accepting properties.
  • molybdenum oxide is particularly preferable because it is stable under air, has a low moisture absorption property, and is easily handled.
  • a light-emitting element in which a plurality of light-emitting units according to the present invention is stacked (hereinafter, referred to as a stacked type element) will be explained with reference to FIG. 3 .
  • This light-emitting element is a stacked type light-emitting element that has a plurality of light-emitting units between a first electrode and a second electrode.
  • a structure similar to that described in Embodiment Modes 2 to 5 can be used for each light-emitting unit.
  • the light-emitting element described in Embodiment Mode 2 is a light-emitting element having one light-emitting unit.
  • a light-emitting element having a plurality of light-emitting units will be explained.
  • a first light-emitting unit 511 and a second light-emitting unit 512 are stacked between a first electrode 501 and a second electrode 502.
  • An electrode similar to that described in Embodiment Mode 2 can be applied to the first electrode 501 and the second electrode 502.
  • the first light-emitting unit 511 and the second light-emitting unit 512 may have the same structure or different structures, and a structure similar to those described in Embodiment Modes 2 to 5 can be applied.
  • a charge generation layer 513 includes a composite material of an organic compound and metal oxide.
  • the composite material of an organic compound and metal oxide is described in Embodiment Mode 2 or 5, and includes an organic compound and metal oxide such as vanadium oxide, molybdenum oxide, or tungsten oxide.
  • As the organic compound various compounds such as an aromatic amine compound, a carbazole derivative, a aromatic hydrocarbon, and a high molecular weight compound (oligomer, dendrimer, polymer, or the like) can be used.
  • An organic compound having a hole mobility of greater than or equal to 1 ⁇ 10 -6 cm 2 /Vs is preferably applied as the organic compound. However, other substances than these compounds may also be used as long as the hole transporting properties thereof are higher than the electron transporting properties thereof.
  • the composite material of an organic compound and metal oxide is superior in carrier injecting property and carrier transporting property, and accordingly, low-voltage driving and low-current driving can be realized.
  • the charge generation layer 513 may be formed with a combination of a composite material of an organic compound and metal oxide and other materials.
  • the charge generation layer 513 may be formed with a combination of a layer including the composite material of an organic compound and metal oxide and a layer including one compound selected from electron donating substances and a compound having a high electron transporting property.
  • the charge generation layer 513 may be formed with a combination of a layer including the composite material of an organic compound and metal oxide and a transparent conductive film.
  • the charge generation layer 513 is acceptable as long as electrons are injected to one light-emitting unit and holes are injected to the other light-emitting unit when a voltage is applied between the first electrode 501 and the second electrode 502.
  • any structure is acceptable for the charge generation layer 513 as long as the layer 513 injects electrons and holes into the first light-emitting unit 511 and the second light-emitting unit 512, respectively.
  • the light-emitting element having two light-emitting units is explained; however, the present invention can be applied to a light-emitting element in which three or more light-emitting units are stacked.
  • a plurality of light-emitting units between a pair of electrodes in such a manner that the plurality of light-emitting units is partitioned with a charge generation layer, high luminance emission can be realized at a low current density, which contributes to enhancement of the lifetime of the light-emitting element.
  • a light-emitting device capable of low-voltage driving and low-power consuming can be realized.
  • This embodiment mode can be appropriately combined with another embodiment mode.
  • FIG. 4A is a top view showing a light-emitting device
  • FIG. 4B is a cross-sectional view of FIG. 4A taken along lines A-A' and B-B'.
  • a driver circuit portion (source side driver circuit), a pixel portion, and a driver circuit portion (gate side driver circuit) are denoted by reference numerals 601, 602, and 603, respectively, and are indicated by dotted lines.
  • a sealing substrate and a sealing material are denoted by reference numerals 604 and 605, respectively, and a portion surrounded by the sealing material 605 corresponds to a space 607.
  • a leading wiring 608 is a wiring for transmitting a signal to be inputted to the source side driver circuit 601 and the gate side driver circuit 603, and this wiring 608 receives a video signal, a clock signal, a start signal, a reset signal, and the like from an FPC (flexible printed circuit) 609 that is an external input terminal.
  • FPC flexible printed circuit
  • the light-emitting device in this specification includes not only a light-emitting device itself but also a light-emitting device attached with an FPC or a PWB.
  • the driver circuit portion and the pixel portion are formed over a substrate 610.
  • the source side driver circuit 601 which is the driver circuit portion, and one pixel in the pixel portion 602 are shown.
  • a CMOS circuit which is a combination of an n-channel TFT 623 and a p-channel TFT 624, is formed as the source side driver circuit 601.
  • the driver circuit may be formed using various CMOS circuits, PMOS circuits, or NMOS circuits.
  • CMOS circuits complementary metal-oxide-semiconductor circuits
  • PMOS circuits PMOS circuits
  • NMOS circuits NMOS circuits
  • the pixel portion 602 has a plurality of pixels, each of which includes a switching TFT 611, a current control TFT 612, and a first electrode 613 which is electrically connected to a drain of the current control TFT 612. It is to be noted that an insulator 614 is formed so as to cover an edge portion of the first electrode 613. Here, a positive photosensitive acrylic resin film is used for the insulator 614.
  • the insulator 614 is formed so as to have a curved surface having curvature at an upper end portion or a lower end portion thereof in order to obtain favorable coverage.
  • the insulator 614 is preferably formed so as to have a curved surface with a curvature radius (0.2 ⁇ m to 3 ⁇ m) only at the upper end portion thereof.
  • a negative type resin which becomes insoluble in an etchant by photo-irradiation or a positive type resin which becomes soluble in an etchant by photo-irradiation can be used for the insulator 614.
  • a layer 616 including a light-emitting substance and a second electrode 617 are formed over the first electrode 613.
  • a material having a high work function is preferably used as a material for the first electrode 613 serving as an anode.
  • the first electrode 613 can be formed by using stacked layers of a titanium nitride film and a film including aluminum as its main component; a three-layer structure of a titanium nitride film, a film including aluminum as its main component, and a titanium nitride film; or the like as well as a single-layer film such as an ITO film, an indium tin oxide film including silicon, an indium oxide film including 2 to 20 wt% of zinc oxide, a titanium nitride film, a chromium film, a tungsten film, a Zn film, or a Pt film.
  • the electrode 613 shows low resistance enough to serve as a wiring, giving an good oh
  • the layer 616 including a light-emitting substance is formed by various methods such as an evaporation method using an evaporation mask, an ink-jet method, and a spin coating method.
  • the layer 616 including a light-emitting substance has the anthracene derivative of the present invention described in Embodiment Mode 1.
  • the layer 616 including a light-emitting substance may be formed using another material including a low molecular weight compound or a high molecular weight compound (including oligomer and dendrimer).
  • a material used for the second electrode 617 which is formed over the layer 616 including a light-emitting substance and serves as a cathode
  • a material having a low work function Al, Mg, Li, Ca, or an alloy or a compound thereof such as MgAg, MgIn, AlLi, LiF, or CaF 2 ) is preferably used.
  • stacked layers of a metal thin film and a transparent conductive film are preferably used as the second electrode 617.
  • ITO indium oxide including 2 to 20 wt% of zinc oxide, indium oxide-tin oxide including silicon or silicon oxide, zinc oxide (ZnO), or the like
  • a light-emitting element 618 is provided in the space 607 surrounded by the element substrate 610, the sealing substrate 604, and the sealing material 605.
  • the space 607 is filled with a an inert gas (nitrogen, argon, or the like.
  • an inert gas nitrogen, argon, or the like.
  • an epoxy-based resin is preferably used as the sealing material 605. It is desired that the material allows as little moisture and oxygen as possible to penetrate.
  • a plastic substrate formed using FRP (Fiberglass-Reinforced Plastics), PVF (polyvinyl fluoride), polyester, acrylic resin, or the like can be used as well as a glass substrate or a quartz substrate.
  • Embodiment Mode 1 Since the anthracene derivative described in Embodiment Mode 1 is used for the light-emitting device of the present invention, a light-emitting device having high performance can be obtained. Specifically, a light-emitting device having a long lifetime can be obtained.
  • the anthracene derivative of the present invention has high luminous efficiency, a light-emitting device with low power consumption can be obtained.
  • an anthracene derivative of the present invention is capable of green light emission with high efficiency, the anthracene derivative can be favorably used for a full-color display. Further, since the anthracene derivative of the present invention is capable of green light emission with a long lifetime, it can be favorably used for a full-color display.
  • the anthracene derivative of the present invention is capable of green light emission with high efficiency, white light emission can be obtained by combining with another light emission material.
  • white light emission can be obtained by combining with another light emission material.
  • red (R), green (G), and blue (B) emissions which exhibit the corresponding NTSC chromaticity coordinates
  • FIG. 5 shows a perspective view of a passive type light-emitting device which is manufactured by applying the present invention.
  • a layer 955 including a light-emitting substance is provided between an electrode 952 and an electrode 956 over a substrate 951.
  • An edge of the electrode 952 is covered with an insulating layer 953.
  • a partition layer 954 is provided over the insulating layer 953.
  • a side wall of the partition layer 954 slopes so that a distance between one side wall and the other side wall becomes narrow toward a substrate surface.
  • a cross section of the partition layer 954 in the direction of a short side is trapezoidal, and a base (a side expanding in a similar direction as a plane direction of the insulating layer 953 and in contact with the insulating layer 953) is shorter than an upper side (a side expanding in a similar direction as the plane direction of the insulating layer 953 and not in contact with the insulating layer 953).
  • the partition layer 954 provided in this manner allows patterning the electrode 956.
  • a light-emitting device with a long lifetime can be also obtained in the case of the passive type light-emitting device by using the light-emitting element of the present invention. Further, a light-emitting device with low power consumption can be obtained.
  • an electronic device of the present invention including the light-emitting device described in Embodiment Mode 7 will be explained.
  • the electronic device of the present invention includes the anthracene derivative described in Embodiment Mode 1, and has a display portion with a long lifetime. Also, the electronic device of the present invention possesses a display portion with reduced power consumption.
  • a camera such as a video camera or a digital camera, a goggle type display, a navigation system, an audio reproducing device (car audio component stereo, audio component stereo, or the like), a computer, a game machine, a portable information terminal (mobile computer, mobile phone, portable game machine, electronic book, or the like), and an image reproducing device provided with a recording medium (specifically, a device capable of reproducing a recording medium such as a Digital Versatile Disc (DVD) and provided with a display device that can display the image), and the like are given. Specific examples of these electronic devices are shown in FIGS. 6A to 6D .
  • FIG. 6A shows a television device according to the present invention, which includes a housing 9101, a supporting base 9102, a display portion 9103, a speaker portion 9104, a video input terminal 9105, and the like.
  • the display portion 9103 has light-emitting elements similar to, those described in Embodiment Modes 2 to 5, and the light-emitting elements are arranged in matrix.
  • the features of the light-emitting element are exemplified by the luminous efficiency and long lifetime.
  • the display portion 9103 which includes the light-emitting elements has similar features. Therefore, in the television device, image quality is scarcely deteriorated and low power consumption is achieved.
  • deterioration compensation function circuits and power supply circuits can be significantly reduced or downsized in the television device, which enables reduction of the size and weight of the housing 9101 and supporting base 9102.
  • the television device according to the present invention low power consumption, high image quality, and small size and lightweight are achieved; therefore, a product which is suitable for living environment can be provided. Also, since the anthracene derivative described in Embodiment Mode 1 is capable of green light emission, a full-color display is possible, and a television device having a display portion with a long life can be obtained.
  • FIG. 6B shows a computer according to the present invention, which includes a main body 9201, a housing 9202, a display portion 9203, a keyboard 9204, an external connection port 9205, a pointing device 9206, and the like.
  • the display portion 9203 has light-emitting elements similar to those described in Embodiment Modes 2 to 5, and the light-emitting elements are arranged in matrix. The features of the light-emitting element are given by high luminous efficiency and long lifetime.
  • the display portion 9203 which includes the light-emitting elements has similar features. Therefore, in the computer, image quality is scarcely deteriorated and lower power consumption is achieved.
  • deterioration compensation function circuits and power supply circuits can be significantly reduced or downsized in the computer; therefore, small sized and lightweight main body 9201 and housing 9202 can be achieved.
  • the computer according to the present invention low power consumption, high image quality, and small size and lightweight are achieved; therefore, a product which is suitable for an environment can be supplied.
  • the anthracene derivative described in Embodiment Mode 1 is capable of green light emission, a full-color display is possible, and a computer having a display portion with a long lifetime can be obtained.
  • FIG. 6C shows a mobile phone according to the present invention, which includes a main body 9401, a housing 9402, a display portion 9403, an audio input portion 9404, an audio output portion 9405, an operation key 9406, an external connection port 9407, an antenna 9408, and the like.
  • the display portion 9403 has light-emitting elements similar to those described in Embodiment Modes 2 to 5, and the light-emitting elements are arranged in matrix.
  • the features of the light-emitting element are exemplified by high luminous efficiency and long lifetime.
  • the display portion 9403 which includes the light-emitting elements has similar features. Therefore, in the mobile phone, image quality is scarcely deteriorated and lower power consumption is achieved.
  • deterioration compensation function circuits and power supply circuits can be significantly reduced or downsized in the mobile phone; therefore, small sized and lightweight main body 9401 and housing 9402 can be supplied.
  • the mobile phone according to the present invention low power consumption, high image quality, and a small size and lightweight are achieved; therefore, a product which is suitable for carrying can be provided.
  • the anthracene derivative described in Embodiment Mode 1 is capable of green light emission, a full-color display is possible, and a mobile phone having a display portion with a long lifetime can be obtained.
  • FIG. 6D shows a camera according to the present invention, which includes a main body 9501, a display portion 9502, a housing 9503, an external connection port 9504, a remote control receiving portion 9505, an image receiving portion 9506, a battery 9507, an audio input portion 9508, operation keys 9509, an eye piece portion 9510, and the like.
  • the display portion 9502 has light-emitting elements similar to those described in Embodiment Modes 2 to 5, and the light-emitting elements are arranged in matrix. Some features of the light-emitting element are its high luminous efficiency long lifetime.
  • the display portion 9502 which includes the light-emitting elements has similar features. Therefore, in the camera, image quality is hardly deteriorated and lower power consumption can be achieved.
  • Such features contribute to significant reduction and downsizing of the deterioration compensation function circuits and power supply circuits in the camera; therefore, a small sized and lightweight main body 9501 can be supplied.
  • the camera according to the present invention low power consumption, high image quality, and small size and lightweight are achieved; therefore, a product which is suitable for carrying can be provided.
  • the anthracene derivative described in Embodiment Mode 1 is capable of green light emission, full-color display is possible, and a camera having a display portion with a long lifetime can be obtained.
  • the applicable range of the light-emitting device of the present invention is so wide that the light-emitting device can be applied to electronic devices in various fields.
  • the anthracene derivative of the present invention electronic devices which have display portions with a long lifetime can be provided.
  • the light-emitting device of the present invention can also be used as a lighting device.
  • One mode using the light-emitting element of the present invention as the lighting device will be explained with reference to FIG. 7 .
  • FIG. 7 shows an example of a liquid crystal display device using the light-emitting device of the present invention as a backlight.
  • the liquid crystal display device shown in FIG. 7 includes a housing 901, a liquid crystal layer 902, a backlight 903, and a housing 904, and the liquid crystal layer 902 is connected to a driver IC 905.
  • the light-emitting device of the present invention is used for the backlight 903, and current is supplied through a terminal 906.
  • the light-emitting device of the present invention is a lighting device with plane light emission, and can have a large area. Therefore, the backlight can have a large area, and a liquid crystal display device having a large area can be obtained. Furthermore, the light-emitting device of the present invention has a thin shape and has low power consumption; therefore, a thin shape and low power consumption of a display device can also be achieved. Since the light-emitting device of the present invention has a long lifetime, a liquid crystal display device using the light-emitting device of the present invention also has a long lifetime.
  • FIG. 8 shows an example of the light-emitting device to which the present invention is applied.
  • a table lamp shown in FIG. 8 has a housing 2001 and a light source 2002, and the light-emitting device of the present invention is used as the light source 2002.
  • the light-emitting device of the present invention has high luminous efficiency and has a long lifetime; therefore, a table lamp also has high luminous efficiency and a long lifetime.
  • FIG. 9 shows an example of a light-emitting device to which the present invention is applied.
  • This Figure demonstrates an example for the application to an indoor lighting device 3001. Since the light-emitting device of the present invention can also have a large area, the light-emitting device of the present invention can be used as a lighting device having a large emission area. Further, the light-emitting device of the present invention has a thin shape and consumes low power; therefore, the light-emitting device of the present invention can be used as a lighting device having a thin shape and low-power consumption.
  • the light-emitting device fabricated by the present invention is used as the indoor lighting device 3001, and public broadcasting and movies can be watched.
  • both of the devices consume low power, a powerful image can be watched in a bright room without concern about electricity charges.
  • 1 H NMR data of 2DPAPA is shown below.
  • 1 H NMR (DMSO- d 6 , 300 MHz): ⁇ 6.90-7.14 (m, 15H), 7.25-7.37 (m, 10H), 7.44-7.52 (m, 8H), 7.57-7.66 (m, 3H).
  • the 1 H NMR chart is shown in FIGS. 11A and 11B . Note that the range of 6.5 ppm to 8.0 ppm in FIG. 11A is expanded and shown in FIG. 11B .
  • the decomposition temperature ( T d ) of 2DPAPA measured with a thermogravimetric/differential thermal analyzer (type TG/DTA 320, manufactured by Seiko Instruments Inc.), was found to be 395.9 °C, meaning high thermal stability of this compound.
  • the absorption spectrum of a toluene solution of 2DPAPA is shown in FIG. 12 .
  • an absorption spectrum of a thin film of 2DPAPA is shown in FIG. 13 .
  • An ultraviolet-visible spectrophotometer (type V550, manufactured by Japan Spectroscopy Corporation) was used for measurement. The spectrum of the solution was measured in a quartz cell. The sample of the thin film was fabricated by vapor deposition of 2DPAPA over a quartz substrate.
  • the absorption spectra of the solution and the thin film are shown in FIGS. 12 and 13 , respectively, which were obtained by subtracting the spectrum of the quartz substrate from the corresponding raw spectra. In each of FIGS.
  • a horizontal axis shows wavelength (nm) and a vertical axis shows absorption intensity (an arbitrary unit).
  • absorption was observed at around 442 nm, and in the case of the thin film, absorption was observed at around 452 nm.
  • an emission spectrum of the toluene solution (excitation wavelength of 430 nm) of 2DPAPA is shown in FIG. 14
  • an emission spectrum of the thin film (excitation wavelength of 452 nm) of 2DPAPA is shown in FIG. 15 .
  • a horizontal axis shows wavelength (nm) and a vertical axis shows emission intensity (an arbitrary unit).
  • the maximum emission wavelength was 539 nm (excitation wavelength of 430 nm)
  • the maximum emission wavelength was 543 nm (excitation wavelength of 452 nm).
  • the HOMO level of 2DPAPA in a thin film state which was measured by a photoelectron spectrometer (AC-2, manufactured by Riken Keiki Co., Ltd.) under air was -5.28 eV.
  • the optical energy gap was estimated to be 2.46 eV, which means that LUMO level of 2DPAPA is -2.82 eV.
  • PCA N -phenyl-(9-phenyl-9 H -carbazol-3-yl)amine
  • the decomposition temperature ( T d ) of 2PCAPA measured with a thermogravimetric/differential thermal analyzer (type TG/DTA 320, manufactured by Seiko Instruments Inc.), was found to be 410.1 °C, meaning high thermal stability of this compound.
  • the absorption spectrum of a toluene solution of 2PCAPA is shown in FIG. 18 .
  • an absorption spectrum of a thin film of 2PCAPA is shown in FIG. 19 .
  • An ultraviolet-visible spectrophotometer (type V550, manufactured by Japan Spectroscopy Corporation) was used for measurement. The spectrum of the solution was measured in a quartz cell. The sample of the thin film was fabricated by vapor deposition of 2PCAPA over a quartz substrate.
  • the absorption spectra of the solution and the thin film are shown in FIGS. 18 and 19 , respectively, which were obtained by subtracting the spectrum of the quartz substrate from the corresponding raw spectra. In each of FIGS.
  • a horizontal axis shows wavelength (nm) and a vertical axis shows absorption intensity (an arbitrary unit).
  • absorption intensity an arbitrary unit.
  • absorption was observed at around 442 nm
  • absorption was observed at around 448 nm.
  • an emission spectrum of the toluene solution (excitation wavelength of 430 nm) of 2PCAPA is shown in FIG. 20
  • an emission spectrum of the thin film (excitation wavelength of 448 nm) of 2PCAPA is shown in FIG. 21 .
  • a horizontal axis shows wavelength (nm) and a vertical axis shows emission intensity (an arbitrary unit).
  • the maximum light emission wavelength was 508 nm (excitation wavelength of 430 nm), and in the case of the thin film, the maximum emission wavelength was 537 nm (excitation wavelength of 448 nm).
  • the HOMO level of 2PCAPA in a thin film state which was measured by a photoelectron spectrometer (AC-2, manufactured by Riken Keiki Co., Ltd.) under air was -5.26 eV.
  • the optical energy gap was estimated to be 2.47 eV, which means that LUMO level of 2PCAPA is -2.79 eV.
  • a platinum electrode (a PTE platinum electrode, manufactured by BAS Inc.) was used as a working electrode.
  • a platinum electrode (a VC-3 Pt counter electrode (5 cm), manufactured by BAS Inc.) was used as a counter electrode.
  • An Ag/Ag + electrode (an RE5 non-aqueous solvent type reference electrode, manufactured by BAS Inc.) was used as a reference electrode. The measurement was conducted at room temperature.
  • An oxidation characteristic of 2PCAPA was evaluated in the following manner.
  • the potential of the working electrode with respect to a reference electrode was swept from -0.23 V to 0.60 V, which was followed by sweeping the potential from 0.60 V to -0.23 V. This cycle was set as one cycle, and 100 cycles were performed.
  • a reduction characteristic of 2PCAPA was evaluated in the following manner.
  • the potential of the working electrode with respect to the reference electrode was swept from -0.41 V to -2.50 V, which was followed by sweeping the potential from -2.50 V to -0.41 V. This cycle was set as one cycle, and 100 cycles were performed. Sweeping speed of the CV measurement was set to be 0.1 V/s.
  • FIGS. 22 and 23 The CV measurement result of an oxidation side of 2PCAPA and the CV measurement result of a reduction side of 2PCAPA are shown in FIGS. 22 and 23 , respectively.
  • a horizontal axis shows a potential (V) of the working electrode with respect to the reference electrode
  • a vertical axis shows a current value ( ⁇ A) that flowed between the working electrode and the counter electrode.
  • V potential
  • ⁇ A current value
  • the decomposition temperature ( T d ) of 2DPABPhA measured with a thermogravimetric/differential thermal analyzer (type TG/DTA 320, manufactured by Seiko Instruments Inc.), was found to be 419.8 °C, meaning high thermal stability of this compound.
  • FIG. 25 The absorption spectrum of a toluene solution of 2DPABPhA is shown in FIG. 25 .
  • an absorption spectrum of a thin film of 2DPABPhA is shown in FIG. 26 .
  • An ultraviolet-visible spectrophotometer (type V550, manufactured by Japan Spectroscopy Corporation) was used for measurement. The spectrum of the solution was measured in a quartz cell. The sample of the thin film was fabricated by vapor deposition of 2DPABPhA over a quartz substrate.
  • the absorption spectra of the solution and the thin film are shown in FIGS. 25 and 26 , respectively, which were obtained by subtracting the spectrum of the quartz substrate from the corresponding raw spectra. In each of FIGS.
  • a horizontal axis shows wavelength (nm) and a vertical axis shows absorption intensity (an arbitrary unit).
  • absorption was observed at around 446 nm
  • absorption was observed at around 449 nm.
  • an emission spectrum of the toluene solution (excitation wavelength of 430 nm) of 2DPABPhA is shown in FIG. 27
  • an emission spectrum of the thin film (excitation wavelength of 430 nm) of 2DPABPhA is shown in FIG. 28 .
  • a horizontal axis shows wavelength (nm) and a vertical axis shows emission intensity (an arbitrary unit).
  • the maximum emission wavelength was 542 nm (excitation wavelength of 430 nm)
  • the maximum emission wavelength was 548 nm (excitation wavelength of 449 nm).
  • the HOMO level of 2DPABPhA in a thin film state which was measured by a photoelectron spectrometer (AC-2, manufactured by Riken Keiki Co., Ltd.) under air was -5.28 eV.
  • the optical energy gap was estimated to be 2.47 eV, which means that LUMO level of 2DPABPhA is -2.81 eV.
  • T d The decomposition temperature (T d ) of 2PCABPhA, measured with a thermogravimetric/differential thermal analyzer (type TG/DTA 320, manufactured by Seiko Instruments Inc.), was found to be 423.7 °C, meaning high thermal stability of this compound.
  • FIG. 30 The absorption spectrum of a toluene solution of 2PCABPhA is shown in FIG. 30 .
  • an absorption spectrum of a thin film of 2PCABPhA is shown in FIG. 31 .
  • An ultraviolet-visible spectrophotometer (type V550; manufactured by Japan Spectroscopy Corporation) was used for measurement. The spectrum of the solution was measured in a quartz cell. The sample of the thin film was fabricated by vapor deposition of 2PCABPhA over a quartz substrate.
  • FIGS. 30 and 31 The absorption spectra of the solution and the thin film are shown in FIGS. 30 and 31 , respectively, which were obtained by subtracting the spectrum of the quartz substrate from the corresponding raw spectra. In each of FIGS.
  • a horizontal axis shows wavelength (nm) and a vertical axis shows absorption intensity (an arbitrary unit).
  • absorption was observed at around 440 nm, and in the case of the thin film, absorption was observed at around 449 nm.
  • an emission spectrum of the toluene solution (excitation wavelength of 430 nm) of 2PCABPhA is shown in FIG. 32
  • an emission spectrum of the thin film (excitation wavelength of 449 nm) of 2PCABPhA is shown in FIG. 33 .
  • a horizontal axis shows wavelength (nm) and a vertical axis shows emission intensity (an arbitrary unit).
  • the maximum emission wavelength was 509 nm (excitation wavelength of 430 nm)
  • the maximum emission wavelength was 534 nm (excitation wavelength of 449 nm).
  • the HOMO level of 2PCABPhA in a thin film state which was measured by a photoelectron spectrometer (AC-2, manufactured by Riken Keiki Co., Ltd.) under air was -5.29 eV.
  • the optical energy gap was estimated to be 2.46 eV, which means that LUMO level of 2DPAPA is -2.83 eV.
  • a platinum electrode (a PTE platinum electrode, manufactured by BAS Inc.) was used as a working electrode.
  • a platinum electrode (a VC-3 Pt counter electrode (5 cm), manufactured by BAS Inc.) was used as a counter electrode.
  • An Ag/Ag + electrode (an RE5 non-aqueous solvent type reference electrode, manufactured by BAS Inc.) was used as a reference electrode. The measurement was conducted at room temperature.
  • An oxidation characteristic of 2PCABPhA was evaluated in the following manner.
  • the potential of the working electrode with respect to a reference electrode was swept from -0.23 V to 0.70 V, which was followed by sweeping the potential from 0.70 V to -0.23 V. This cycle was set as one cycle, and 100 cycles were performed.
  • a reduction characteristic of 2PCABPhA was evaluated in the following manner.
  • the potential of the working electrode with respect to the reference electrode was swept from -0.36 V to -2.50 V, which was followed by sweeping the potential from -2.50 V to -0.36 V. This cycle was set as one cycle, and 100 cycles were performed. Sweeping speed of the CV measurement was set to be 0.1 V/s.
  • FIGS. 34 and 35 The CV measurement result of an oxidation side of 2PCABPhA and the CV measurement result of a reduction side of 2PCABPhA are shown in FIGS. 34 and 35 , respectively.
  • a horizontal axis shows a potential (V) of the working electrode with respect to the reference electrode
  • a vertical axis shows a current value ( ⁇ A) that flowed between the working electrode and the counter electrode.
  • V potential
  • ⁇ A current value
  • FIGS. 36A and 36B each show a 1 H NMR chart. Note that the range of 6.5 ppm to 8.5 ppm in FIG. 36A is expanded and shown in FIG. 36B .
  • FIG. 38 The absorption spectrum of a toluene solution of 2YGABPhA is shown in FIG. 38 .
  • an absorption spectrum of a thin film of 2YGABPhA is shown in FIG. 39 .
  • An ultraviolet-visible spectrophotometer (type V550, manufactured by Japan Spectroscopy Corporation) was used for measurement. The spectrum of the solution was measured in a quartz cell. The sample of the thin film was fabricated by vapor deposition of 2YGABPhA over a quartz substrate.
  • the absorption spectra of the solution and the thin film are shown in FIGS. 38 and 39 , respectively, which were obtained by subtracting the spectrum of the quartz substrate from the corresponding raw spectra. In each of FIGS.
  • a horizontal axis shows wavelength (nm) and a vertical axis shows absorption intensity (an arbitrary unit).
  • absorption was observed at around 430 nm, and in the case of the thin film, absorption was observed at around 435 nm.
  • an emission spectrum of the toluene solution (excitation wavelength of 370 nm) of 2YGABPhA is shown in FIG 40
  • an emission spectrum of the thin film (excitation wavelength of 435 nm) of 2YGABPhA is shown in FIG. 41 .
  • a horizontal axis shows wavelength (nm) and a vertical axis shows emission intensity (an arbitrary unit).
  • the maximum emission wavelength was 491 nm (excitation wavelength of 370 nm)
  • the maximum emission wavelength was 495 nm (excitation wavelength of 435 nm).
  • the HOMO level of 2YGABPhA in a thin film state which was measured by a photoelectron spectrometer (AC-2, manufactured by Riken Keiki Co., Ltd.) under air was -5.36 eV.
  • the optical energy gap was estimated to be 2.56 eV, which means that LUMO level of 2YGABPhA is -2.80 eV.
  • a light-emitting element of the present invention is described with reference to FIG. 10 .
  • the chemical formulae of the materials used in this embodiment are shown below.
  • the element structure of the light-emitting element manufactured in this embodiment is summarized in Table 1.
  • Table 1 the mixture ratios are all represented in weight ratios.
  • Table 1 The structure of the light-emitting elements 1-10 No.
  • a film of indium tin oxide containing silicon oxide (ITSO) was formed by sputtering over a glass substrate 2101 to form a first electrode 2102. Note that the film thickness of the first electrode was 110 nm, and an area of the electrode was 2 mm ⁇ 2 mm.
  • ITSO indium tin oxide containing silicon oxide
  • the substrate over which the first electrode was formed was fixed to a substrate holder provided in a vacuum evaporation apparatus, so that a surface over which the first electrode was formed faced down. Then, after reducing the pressure of the vacuum evaporation apparatus to about 10 -4 Pa, a layer 2103 containing a composite material, which was formed of an organic compound and an inorganic compound, was formed over the first electrode 2102 by co-evaporating 4,4'-bis[ N -(1-napthyl)- N -phenylamino]biphenyl (abbreviation: NPB) and molybdenum oxide (VI).
  • NPB 4,4'-bis[ N -(1-napthyl)- N -phenylamino]biphenyl
  • VI molybdenum oxide
  • the co-evaporation method is an evaporation method in which evaporation is carried out from a plurality of evaporation sources at the same time in one treatment chamber.
  • NPB 4,4'-bis[ N -(1-napthyl)- N -phenylamino]biphenyl
  • a light-emitting layer 2105 with a thickness of 40 nm was formed over the hole transporting layer 2104.
  • the weight ratio of CzPA and the anthracene derivative for each light-emitting element was adjusted to be the value shown in Table 1.
  • tris(8-quinolinolato)aluminum (abbreviation: Alq) was formed at a film thickness of 30 nm over the light-emitting layer 2105 in the cases of light-emitting elements 1, 3, 5, 7, and 9 by means of the evaporation method using the resistance heating system, resulting in the fabrication of an electron transporting layer 2106.
  • a film of bathophenanthroline (abbreviation: BPhen) was formed with a thickness of 30 nm to form the electron transporting layer 2106.
  • LiF lithium fluoride
  • a second electrode 2108 was formed. Accordingly, light-emitting elements 1 to 10 were fabricated.
  • FIGS. 48, 49 , and 50 A current density-luminance characteristic, a voltage-luminance characteristic, and a luminance-current efficiency characteristic of the light-emitting element 2 are shown in FIGS. 48, 49 , and 50 , respectively.
  • the emission spectrum which was obtained at a current of 1 mA is illustrated in FIG. 51 .
  • Current efficiency at luminance of 3000 cd/m 2 was 19.3 cd/A, meaning that high current efficiency was exhibited.
  • Power efficiency at luminance of 3000 cd/m 2 was 17.81m/W, indicating that the element 2 can be operated at low power consumption.
  • maximum emission wavelength at a current of 1 mA was 535 nm.
  • FIGS. 58, 59 , and 60 A current density-luminance characteristic, a voltage-luminance characteristic, and a luminance-current efficiency characteristic of the light-emitting element 4 are shown in FIGS. 58, 59 , and 60 , respectively. Also, the emission spectrum which was obtained at a current of 1 mA is illustrated in FIG. 61 .
  • the power efficiency at luminance of 3000 cd/m 2 was 16.4 1m/W, indicating that the element 4 can be operated at low power consumption.
  • maximum emission wavelength at a current of 1 mA was 520 nm.
  • FIGS. 68, 69 , and 70 A current density-luminance characteristic, a voltage-luminance characteristic, and a luminance-current efficiency characteristic of the light-emitting element 6 are shown in FIGS. 68, 69 , and 70 , respectively. Also, the emission spectrum which was obtained at a current of 1 mA is illustrated in FIG. 71 .
  • Current efficiency at luminance of 3000 cd/m 2 was 17.6 cd/A, meaning that high current efficiency was exhibited.
  • the power efficiency at luminance of 3000 cd/m 2 was 18.6 lm/W, indicating that the element 6 can be operated at low power consumption.
  • maximum emission wavelength at a current of 1 mA was 545 nm.
  • FIGS. 78, 79 , and 80 A current density-luminance characteristic, a voltage-luminance characteristic, and a luminance-current efficiency characteristic of the light-emitting element 8 are shown in FIGS. 78, 79 , and 80 , respectively. Also, the emission spectrum which was obtained at a current of 1 mA is illustrated in FIG. 81 .
  • Current efficiency at luminance of 3000 cd/m 2 was 15.74 cd/A, meaning that high current efficiency was exhibited.
  • the power efficiency at luminance of 3000 cd/m 2 was 14.91m/W, indicating that the element 8 can be operated at low power consumption.
  • maximum emission wavelength at a current of 1 mA was 522 nm.
  • FIGS. 82, 83 , and 84 A current density-luminance characteristic, a voltage-luminance characteristic, and a luminance-current efficiency characteristic of the light-emitting element 9 are shown in FIGS. 82, 83 , and 84 , respectively.
  • the emission spectrum which was obtained at a current of 1 mA is illustrated in FIG. 85 .
  • Current efficiency at luminance of 3000 cd/m 2 was 8.9 cd/A, meaning that high current efficiency was exhibited.
  • maximum emission wavelength at a current of 1 mA was 491 nm.
  • FIGS. 86, 87 , and 88 A current density-luminance characteristic, a voltage-luminance characteristic, and a luminance-current efficiency characteristic of the light-emitting element 10 are shown in FIGS. 86, 87 , and 88 , respectively. Also, the emission spectrum which was obtained at a current of 1 mA is illustrated in FIG. 89 .
  • the power efficiency at luminance of 3000 cd/m 2 was 11.6 lm/W, indicating that the element 10 can be operated at low power consumption.
  • maximum emission wavelength at a current of 1 mA was 492 nm.
  • Thermogravimetric/differential thermal analysis (TG-DTA) of 2PCNPA was carried out.
  • a high vacuum differential type differential thermal balance (type DTA2410SA, manufactured by Bruker AXS K.K.) was used.
  • the 5% weight-loss temperature was 289°C, which is indicative of high thermal stability of 2PCNPA.
  • FIG. 91 The absorption spectrum of a toluene solution of 2PCNPA is shown in FIG. 91 .
  • an absorption spectrum of a thin film of 2PCNPA is shown in FIG. 92 .
  • An ultraviolet-visible spectrophotometer (type V550, manufactured by Japan Spectroscopy Corporation) was used for measurement. The spectrum of the solution was measured in a quartz cell. The sample of the thin film was fabricated by vapor deposition of 2PCNPA over a quartz substrate.
  • FIGS. 91 and 92 The absorption spectra of the solution and the thin film are shown in FIGS. 91 and 92 , respectively, which were obtained by subtracting the spectrum of the quartz substrate from the corresponding raw spectra. In each of FIGS.
  • a horizontal axis shows wavelength (nm) and a vertical axis shows absorption intensity (an arbitrary unit).
  • absorption intensity an arbitrary unit.
  • absorption was observed at around 438 nm
  • absorption was observed at around 442 nm.
  • an emission spectrum of the toluene solution (excitation wavelength of 430 nm) of 2PCNPA is shown in FIG. 93
  • an emission spectrum of the thin film (excitation wavelength of 442 nm) of 2PCNPA is shown in FIG. 94 .
  • a horizontal axis shows wavelength (nm) and a vertical axis shows emission intensity (an arbitrary unit).
  • the maximum emission wavelength was 503 nm (excitation wavelength of 445 nm)
  • the maximum emission wavelength was 522 nm (excitation wavelength of 430 nm).
  • the HOMO level of 2PCNPA in a thin film state which was measured by a photoelectron spectrometer (AC-2, manufactured by Riken Keiki Co., Ltd.) under air was -5.21 eV.
  • the optical energy gap was estimated to be 2.48 eV, which means that LUMO level of 2PCNPA is -2.73 eV.
  • a platinum electrode (a PTE platinum electrode, manufactured by BAS Inc.) was used as a working electrode.
  • a platinum electrode (a VC-3 Pt counter electrode (5 cm), manufactured by BAS Inc.) was used as a counter electrode.
  • An Ag/Ag + electrode (an RE5 non-aqueous solvent type reference electrode, manufactured by BAS Inc.) was used as a reference electrode. The measurement was conducted at room temperature.
  • An oxidation characteristic of 2PCNPA was evaluated in the following manner.
  • the potential of the working electrode with respect to a reference electrode was swept from -0.40 V to 0.60 V, which was followed by sweeping the potential from 0.60 V to -0.40 V This cycle was set as one cycle, and 100 cycles were performed.
  • a reduction characteristic of 2PCNPA was evaluated in the following manner.
  • the potential of the working electrode with respect to the reference electrode was swept from -0.15 V to -2.55 V, which was followed by sweeping the potential from -2.55 V to -0.15 V. This cycle was set as one cycle, and 100 cycles were performed. Sweeping speed of the CV measurement was set to be 0.1 V/s.
  • FIGS. 95 and 96 The results of the CV measurement of the oxidation side and reduction side of 2PCNPA are shown in FIGS. 95 and 96 , respectively.
  • a horizontal axis shows a voltage (V) of the working electrode with respect to the reference electrode
  • a vertical axis shows a current value ( ⁇ A) that flowed between the working electrode and the counter electrode.
  • V voltage
  • ⁇ A current value
  • 2NCNPA 2- ⁇ N -(1-naphthyl)- N -[9-(1-naphthyl)carbazol-3-yl]amino ⁇ -9,10-diphenylanthracene
  • the obtained filtrate was separated into an organic layer and an aqueous layer, and after this organic layer was washed with 1 mol/L hydrochloric acid and then with water, the organic layer was dried over magnesium sulfate. This suspension was filtered through Florisil and celite. The filtrate was concentrated to give an oily-substrate, and methanol was added to this oily substrate, followed by irradiation with ultrasound to precipitate a solid. The solid precipitated was collected by suction filtration, giving 22 g of 9-(1-naphthyl)carbazole as white powder (75% yield).
  • NCN N ,9-di(1-naphthyl)-9 H -carbazole-3-amine
  • NCN N ,9-di(1-naphthyl)-9 H -carbazole-3-amine
  • NMR nuclear magnetic resonance measurement
  • FIG. 98 The absorption spectrum of a toluene solution of 2NCNPA is shown in FIG. 98 .
  • an absorption spectrum of a thin film of 2NCNPA is shown in FIG. 99 .
  • An ultraviolet-visible spectrophotometer (type V550, manufactured by Japan Spectroscopy Corporation) was used for measurement. The spectrum of the solution was measured in a quartz cell. The sample of the thin film was fabricated by vapor deposition of 2NCNPA over a quartz substrate.
  • FIGS. 98 and 99 The absorption spectra of the solution and the thin film are shown in FIGS. 98 and 99 , respectively, which were obtained by subtracting the spectrum of the quartz substrate from the corresponding raw spectra. In each of FIGS.
  • a horizontal axis shows wavelength (nm) and a vertical axis shows absorption intensity (an arbitrary unit).
  • absorption was observed at around 448 nm, and in the case of the thin film, absorption was observed at around 465 nm.
  • an emission spectrum of the toluene solution (excitation wavelength of 300 nm) of 2NCNPA is shown in FIG. 100
  • an emission spectrum of the thin film (excitation wavelength of 446 nm) of 2NCNPA is shown in FIG. 101 .
  • a horizontal axis shows wavelength (nm) and a vertical axis shows emission intensity (an arbitrary unit).
  • the maximum emission wavelength was 505 nm (excitation wavelength of 300 nm), and in the case of the thin film, the maximum emission wavelength was 529 nm (excitation wavelength of 446 nm).
  • the HOMO level of 2NCNPA in a thin film state which was measured by a photoelectron spectrometer (AC-2, manufactured by Riken Keiki Co., Ltd.) under air was -5.26 eV.
  • the optical energy gap was estimated to be 2.47 eV, which means that LUMO level of 2NCNPA is -2.79 eV.
  • Thermogravimetric/differential thermal analysis (TG-DTA) of 2NCNPA was carried out.
  • a high vacuum differential type differential thermal balance (type DTA2410SA, manufactured by Bruker AXS K.K.) was used.
  • the 5% weight-loss temperature was 400°C, which is indicative of high thermal stability of 2NCNPA.
  • a glass transition temperature was measured using a differential scanning calorimeter (DSC, manufactured by PerkinElmer, Inc., Pyris 1). First, a sample was heated to 300 °C at 40 °C/min to melt the sample, and then cooled to room temperature at 10 °C/min. Thereafter, the temperature was raised to 300 °C at 10 °C/min. As a result, it was found that the glass transition temperature ( T g ) of 2NCNPA was 174 °C, which means that 2NCNPA has a high glass transition temperature.
  • DSC differential scanning calorimeter
  • n-Bu 4 NClO 4 Tetra- n -butylammonium perchlorate (manufactured by Tokyo Chemical Industry Co., Ltd., catalog number: T0836), a supporting electrolyte, was dissolved in DMF at the concentration of 100 mmol/L to prepare the electrolysis solution.
  • the sample solution was prepared by dissolving the sample in the electrolysis solution at a concentration of 1 mmol/L.
  • a platinum electrode (a PTE platinum electrode, manufactured by BAS Inc.) was used as a working electrode.
  • a platinum electrode (a VC-3 Pt counter electrode (5 cm), manufactured by BAS Inc.) was used as a counter electrode.
  • An Ag/Ag + electrode (an RE5 non-aqueous solvent type reference electrode, manufactured by BAS Inc.) was used as a reference electrode. The measurement was conducted at room temperature.
  • An oxidation characteristic of 2NCNPA was evaluated in the following manner.
  • the potential of the working electrode with respect to a reference electrode was swept from -0.07 V to 0.55 V, which was followed by sweeping the potential from 0.55 V to -0.07 V. This cycle was set as one cycle, and 100 cycles were performed.
  • a reduction characteristic of 2NCNPA was evaluated in the following manner.
  • the potential of the working electrode with respect to the reference electrode was swept from -0.32 V to -2.45 V, which was followed by sweeping the potential from -2.45 V to -0.32 V. This cycle was set as one cycle, and 100 cycles were performed. Sweeping speed of the CV measurement was set to be 0.1 V/s.
  • FIGS. 110 and 111 The CV measurement result of the oxidation and reduction sides of 2NCNPA are shown in FIGS. 110 and 111 , respectively.
  • a horizontal axis shows a voltage (V) of the working electrode with respect to the reference electrode
  • a vertical axis shows a current value ( ⁇ A) that flowed between the working electrode and the counter electrode.
  • V voltage
  • ⁇ A current value
  • a manufacturing method of a light-emitting element of this embodiment is shown below.
  • a film of indium tin oxide containing silicon oxide (ITSO) was formed by sputtering over the glass substrate 2101 to form the first electrode 2102. Note that the film thickness of the first electrode 2102 was 110 nm, and the area of the electrode was 2 mm ⁇ 2 mm.
  • ITSO indium tin oxide containing silicon oxide
  • the substrate over which the first electrode was formed was fixed to a substrate holder provided in a vacuum evaporation apparatus, so that a surface over which the first electrode was formed faced down.
  • the layer 2103 containing a composite material, which contains an organic compound and an inorganic compound was formed over the first electrode 2102 by co-evaporating 4,4'-bis[ N -(1-napthyl)- N -phenylamino]biphenyl (abbreviation: NPB) and molybdenum oxide (VI).
  • NPB 4,4'-bis[ N -(1-napthyl)- N -phenylamino]biphenyl
  • VI molybdenum oxide
  • NPB 4,4'-bis[ N -(1-napthyl)- N -phenylamino]biphenyl
  • the light-emitting layer 2105 with a thickness of 40 nm was formed over the hole transporting layer 2104.
  • the electron transporting layer 2106 was formed over the light-emitting layer 2105 by forming a film of bathophenanthroline (abbreviation: BPhen) to have a film thickness of 30 nm by means of the evaporation using resistance heating system.
  • BPhen bathophenanthroline
  • the electron injecting layer 2107 was formed over the electron transporting layer 2106 by forming a film of lithium fluoride with a thickness of 1 nm.
  • FIGS. 102, 103 , and 104 A current density-luminance characteristic, a voltage-luminance characteristic, and a luminance-current efficiency characteristic of the light-emitting element 11 are shown in FIGS. 102, 103 , and 104 , respectively. Also, the emission spectrum which was obtained at a current of 1 mAis illustrated in FIG. 105 .
  • maximum emission wavelength at a current of 1 mA was 518 nm.
  • a fabrication method of a light-emitting element of this embodiment is shown below.
  • a film of indium tin oxide containing silicon oxide (ITSO) was formed by sputtering over the glass substrate 2101 to form the first electrode 2102. Note that the film thickness of the first electrode 2102 was 110 nm, and the area of the electrode was 2 mm ⁇ 2 mm.
  • ITSO indium tin oxide containing silicon oxide
  • the substrate over which the first electrode was formed was fixed to a substrate holder provided in a vacuum evaporation apparatus, so that a surface over which the first electrode was formed faced down.
  • the layer 2103 containing a composite material, which contains an organic compound and an inorganic compound was formed over the first electrode 2102 by co-evaporating 4,4'-bis[ N -(1-napthyl)- N -phenylamino]biphenyl (abbreviation: NPB) and molybdenum oxide (VI).
  • NPB 4,4'-bis[ N -(1-napthyl)- N -phenylamino]biphenyl
  • VI molybdenum oxide
  • NPB 4,4'-bis[ N -(1-napthyl)- N -phenylamino]biphenyl
  • the electron transporting layer 2106 was formed over the light-emitting layer 2105 by forming a film of bathophenanthroline (abbreviation: BPhen) to have a film thickness of 30 nm by means of the evaporation using resistance heating system.
  • BPhen bathophenanthroline
  • the electron injecting layer 2107 was formed over the electron transporting layer 2106 by forming a film of lithium fluoride with a thickness of 1 nm.
  • FIGS. 106, 107 , and 108 A current density-luminance characteristic, a voltage-luminance characteristic, and a luminance-current efficiency characteristic of the light-emitting element 12 are shown in FIGS. 106, 107 , and 108 , respectively. Also, the emission spectrum which was obtained at a current of 1 mA is illustrated in FIG. 109 .
  • maximum emission wavelength at a current of 1 mA was 511 nm.
  • 1 H NMR data of 2YGAPA is shown below.
  • the 1 H NMR chart is shown in each of FIGS. 112A and 112B . Note that the range of 6.5 ppm to 8.5 ppm in FIG. 112A is expanded and shown in FIG. 112B .
  • the absorption spectrum of a toluene solution of 2YGAPA is shown in FIG. 113 .
  • An ultraviolet-visible spectrophotometer (type V550, manufactured by Japan Spectroscopy Corporation) was used for measurement.
  • the absorption spectrum of the solution is shown in Figure 113 , which was obtained by subtracting the spectrum of the quartz substrate from the raw spectra of the sample solution charged in a quartz cell.
  • a horizontal axis shows wavelength (nm) and a vertical axis shows absorption intensity (an arbitrary unit).
  • absorption was observed at around 428 nm.
  • FIG. 114 an emission spectrum of the toluene solution (excitation wavelength of 430 nm) of 2YGAPA is shown in FIG. 114 .
  • a horizontal axis shows wavelength (nm) and a vertical axis shows emission intensity (an arbitrary unit).
  • the maximum emission wavelength was 486 nm (excitation wavelength of 430 nm).
  • the HOMO level of 2YGAPA in a thin film state which was measured by a photoelectron spectrometer (AC-2, manufactured by Riken Keiki Co., Ltd.) under air, was -5.47 eV.
  • the optical energy gap was estimated to be 2.55 eV, which means that LUMO level of 2YGAPA is -2.92 eV.
  • a precipitate in the mixture was collected by suction filtration, and the precipitate was washed with water and then with ethanol. Then, the obtained solid was dissolved in a mixed solvent of toluene and chloroform, and the solution was subjected to suction filtration through Florisil, celite, and then alumina. The filtrate was concentrated, and the residue was purified by silica gel column chromatography (eluent: toluene). The obtained solid was recrystallized with a mixed solvent of chloroform and hexane, giving 9.37 g of 1-bromo-9,10-anthraquinone as yellow powder in 36% yield.
  • the absorption spectrum of a toluene solution of 1PCAPA is shown in FIG. 116 .
  • An ultraviolet-visible spectrophotometer (type V550, manufactured by Japan Spectroscopy Corporation) was used for measurement.
  • the absorption spectrum of the solution is shown in Figure 116 , which was obtained by subtracting the spectrum of the quartz substrate from the raw spectra of the sample solution charged in a quartz cell.
  • a horizontal axis shows wavelength (nm) and a vertical axis shows absorption intensity (an arbitrary unit).
  • absorption was observed at around 443 nm.
  • an emission spectrum of the toluene solution (excitation wavelength of 430 nm) of 1PCAPA is shown in FIG.
  • a horizontal axis shows wavelength (nm) and a vertical axis shows emission intensity (an arbitrary unit).
  • emission intensity an arbitrary unit.
  • the maximum emission wavelength was 512 nm (excitation wavelength of 430 nm).
  • the obtained solid was recrystallized with a mixed solvent of dichloromethane and hexane, giving 0.70 g yellow powder in 77% yield.
  • Sublimation purification of 0.70 g of the obtained yellow solid was carried out by a train sublimation method.
  • the sublimation purification was carried out under reduced pressure of 7.0 Pa, with a flow rate of argon at 3 mL/min, at 352 °C for 15 hours. 0.62 g of the compound was recovered, which corresponds to the yield of 89%.
  • FIG. 119 The absorption spectrum of a toluene solution of 2PCADFAis shown in FIG. 119 .
  • An ultraviolet-visible spectrophotometer (type V550, manufactured by Japan Spectroscopy Corporation) was used for measurement.
  • the absorption spectrum of the solution is shown in Figure 119 , which was obtained by subtracting the spectrum of the quartz substrate from the raw spectra of the sample solution charged in a quartz cell.
  • a horizontal axis shows wavelength (nm) and a vertical axis shows absorption intensity (an arbitrary unit).
  • absorption was observed at around 442 nm.
  • FIG. 119 an emission spectrum of the toluene solution (excitation wavelength of 430 nm) of 2PCADFA is shown in FIG. 119 .
  • a horizontal axis shows wavelength (nm) and a vertical axis shows emission intensity (an arbitrary unit).
  • the maximum light emission wavelength was 516 nm (excitation wavelength of 439 nm).
  • the aqueous layer of this mixture was extracted with ethyl acetate, and the extracted solution and the organic layer were combined and washed with a saturated sodium bicarbonate aqueous solution. Thereafter, the organic layer was dried with magnesium sulfate, filtered, and concentrated to give a light brown, oily compound.
  • This oily compound was dissolved in 20 mL of chloroform, and then about 50 mL of hexane was added to the solution. A white solid was precipitated after keeping 1 hour, which was followed by filtration, giving 5.2 g of the target compound as a white solid in 58% yield.
  • This mixture was refluxed for 10.5 hours at 100 °C.
  • the aqueous layer of this mixture was extracted with toluene.
  • This extracted solution and the organic layer were combined, washed with brine, dried with magnesium sulfate, filtered, and concentrated, which resulted in a light brown, oily compound.
  • This oily compound was dissolved in about 50 mL of toluene, and then subjected to suction filtration through celite, alumina, and Florisil.
  • the absorption spectrum of a toluene solution of 2DPBAPA is shown in FIG. 121 .
  • An ultraviolet-visible spectrophotometer (type V550, manufactured by Japan Spectroscopy Corporation) was used for measurement.
  • the absorption spectrum of the solution is shown in Figure 121 , which was obtained by subtracting the spectrum of the quartz substrate from the raw spectra of the sample solution charged in a quartz cell.
  • a horizontal axis shows wavelength (nm) and a vertical axis shows absorption intensity (an arbitrary unit).
  • absorption was observed at around 355 nm.
  • an emission spectrum of the toluene solution (excitation wavelength of 370 nm) of 2DPBAPA is shown in FIG. 122 .
  • a horizontal axis shows wavelength (nm) and a vertical axis shows emission intensity (an arbitrary unit).
  • the maximum emission wavelength was 493 nm (excitation wavelength of 370 nm).
  • This mixture was refluxed for 6.5 hours at 100 °C. After this mixture was left to cool for about 15 hours, a light blackish-brown solid was precipitated. This solid was collected by suction filtration, and 2.5 g of the target compound was obtained as light blackish-brown solid in 70% yield.
  • the absorption spectrum of a toluene solution of 2YGBAPA is shown in FIG. 124 .
  • An ultraviolet-visible spectrophotometer (type V550, manufactured by Japan Spectroscopy Corporation) was used for measurement.
  • the absorption spectrum of the solution is shown in Figure 124 , which was obtained by subtracting the spectrum of the quartz substrate from the raw spectra of the sample solution located in a quartz cell.
  • a horizontal axis shows wavelength (nm) and a vertical axis shows absorption intensity (an arbitrary unit).
  • absorption was observed at around 344 nm.
  • FIG. 125 an emission spectrum of the toluene solution (excitation wavelength of 370 nm) of 2YGBAPA is shown in FIG. 125 .
  • a horizontal axis shows wavelength (nm) and a vertical axis shows emission intensity (an arbitrary unit).
  • the maximum light emission wavelength was 485 nm (excitation wavelength of 370 nm).
  • a manufacturing method of a light-emitting element of this embodiment is described below.
  • a film of indium tin oxide containing silicon oxide (ITSO) was formed by sputtering over the glass substrate 2101 to form the first electrode 2102. Note that the film thickness of the first electrode 2102 was 110 nm, and the area of the electrode was 2 mm ⁇ 2 mm.
  • ITSO indium tin oxide containing silicon oxide
  • the substrate over which the first electrode was formed was fixed to a substrate holder provided in a vacuum evaporation apparatus, so that a surface over which the first electrode was formed faced down.
  • the layer 2103 containing a composite material, which contains an organic compound and an inorganic compounds was formed over the first electrode 2102 by co-evaporating 4,4'-bis[ N -(1-napthyl)- N -phenylamino]biphenyl (abbreviation: NPB) and molybdenum oxide (VI).
  • NPB 4,4'-bis[ N -(1-napthyl)- N -phenylamino]biphenyl
  • VI molybdenum oxide
  • NPB 4,4'-bis[ N -(1-napthyl)- N -phenylamino]biphenyl
  • the light-emitting layer 2105 with a thickness of 30 nm was formed over the hole transporting layer 2104.
  • the electron transporting layer 2106 was formed over the light-emitting layer 2105 by forming a film of tris(8-quinolinolato)aluminum (abbreviation: Alq) to have a film thickness of 10 nm by means of the evaporation using resistance heating system.
  • Alq tris(8-quinolinolato)aluminum
  • the electron injecting layer 2107 was formed at a thickness of 20 nm over the electron transporting layer 2106 by co-evaporating tris(8-quinolinolato)aluminum (abbreviation: Alq) and lithium (Li).
  • Alq tris(8-quinolinolato)aluminum
  • Li lithium
  • a film of indium tin oxide containing silicon oxide (ITSO) was formed by sputtering over the glass substrate 2101 to form the first electrode 2102. Note that the film thickness of the first electrode 2102 was 110 nm, and the area of the electrode was 2 mm ⁇ 2 mm.
  • ITSO indium tin oxide containing silicon oxide
  • the substrate over which the first electrode was formed was fixed to a substrate holder provided in a vacuum evaporation apparatus, so that a surface over which the first electrode was formed faced down.
  • the layer 2103 containing a composite material, which contains an organic compound and an inorganic compound was formed over the first electrode 2102 by co-evaporating 4,4'-bis[N-(1-napthyl)-N-phenylamino]biphenyl (abbreviation: NPB) and molybdenum oxide (VI).
  • NPB 4,4'-bis[N-(1-napthyl)-N-phenylamino]biphenyl
  • V molybdenum oxide
  • NPB 4,4'-bis[ N -(1-napthyl)- N -phenylamino]biphenyl
  • the light-emitting layer 2105 with a thickness of 40 nm was formed over the hole transporting layer 2104.
  • the electron transporting layer 2106 was formed over the light-emitting layer 2105 by fabricating a film of tris(8-quinolinolato)aluminum (abbreviation: Alq) with a film thickness of 30 nm by means of the evaporation method using resistance heating system.
  • a film of bathophenanthroline (abbreviation: BPhen) was formed with a thickness of 30 nm to form the electron transporting layer 2106.
  • a film of lithium fluoride (LiF) was formed over the electron transporting layer 2106 to have a thickness of 1 nm, to form an electron injecting layer 2107.
  • FIGS. 138,139 , and 140 A current density-luminance characteristic, a voltage-luminance characteristic, and a luminance-current efficiency characteristic of the light-emitting element 15 are shown in FIGS. 138,139 , and 140 , respectively. Also, the emission spectrum which was obtained at a current of 1 mA is illustrated in FIG 141 .
  • Current efficiency at luminance of 3000 cd/m 2 was 15.9 cd/A, meaning that high current efficiency was exhibited.
  • Power efficiency at luminance of 3000 cd/m 2 was 16.7 1m/W, indicating that the element 15 can be operated at low power consumption.
  • maximum emission wavelength at a current of 1 mA was 515 nm.

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  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Indole Compounds (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
EP07742331.7A 2006-04-28 2007-04-18 Anthracene derivative, and light-emitting element, light-emitting device, electronic device using anthracene derivative Active EP2084123B1 (en)

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TWI429616B (zh) 2014-03-11
US8106392B2 (en) 2012-01-31
CN103396324B (zh) 2015-10-21
US10079345B2 (en) 2018-09-18
US8431252B2 (en) 2013-04-30
US20120126215A1 (en) 2012-05-24
EP2084123A4 (en) 2012-03-14
EP2084123A1 (en) 2009-08-05
CN103396324A (zh) 2013-11-20
US20160197278A1 (en) 2016-07-07
US20110062428A1 (en) 2011-03-17
US20080017853A1 (en) 2008-01-24
CN101432259B (zh) 2013-09-18
US20130306941A1 (en) 2013-11-21
KR20090016679A (ko) 2009-02-17
WO2007125934A1 (en) 2007-11-08
US7842945B2 (en) 2010-11-30
US9287511B2 (en) 2016-03-15
TW200808689A (en) 2008-02-16
KR101415018B1 (ko) 2014-07-04

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