EP2042927A4 - Composition contenant une résine de condensation hydroxylée pour former un film sous un résist - Google Patents

Composition contenant une résine de condensation hydroxylée pour former un film sous un résist

Info

Publication number
EP2042927A4
EP2042927A4 EP07745397A EP07745397A EP2042927A4 EP 2042927 A4 EP2042927 A4 EP 2042927A4 EP 07745397 A EP07745397 A EP 07745397A EP 07745397 A EP07745397 A EP 07745397A EP 2042927 A4 EP2042927 A4 EP 2042927A4
Authority
EP
European Patent Office
Prior art keywords
composition containing
forming film
film under
condensation resin
under resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP07745397A
Other languages
German (de)
English (en)
Other versions
EP2042927A1 (fr
EP2042927B1 (fr
Inventor
Yoshiomi Hiroi
Takahiro Kishioka
Rikimaru Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Chemical Corp
Original Assignee
Nissan Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Corp filed Critical Nissan Chemical Corp
Publication of EP2042927A1 publication Critical patent/EP2042927A1/fr
Publication of EP2042927A4 publication Critical patent/EP2042927A4/fr
Application granted granted Critical
Publication of EP2042927B1 publication Critical patent/EP2042927B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G63/00—Macromolecular compounds obtained by reactions forming a carboxylic ester link in the main chain of the macromolecule
    • C08G63/02—Polyesters derived from hydroxycarboxylic acids or from polycarboxylic acids and polyhydroxy compounds
    • C08G63/12—Polyesters derived from hydroxycarboxylic acids or from polycarboxylic acids and polyhydroxy compounds derived from polycarboxylic acids and polyhydroxy compounds
    • C08G63/16—Dicarboxylic acids and dihydroxy compounds
    • C08G63/18—Dicarboxylic acids and dihydroxy compounds the acids or hydroxy compounds containing carbocyclic rings
    • C08G63/19—Hydroxy compounds containing aromatic rings
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G63/00—Macromolecular compounds obtained by reactions forming a carboxylic ester link in the main chain of the macromolecule
    • C08G63/66—Polyesters containing oxygen in the form of ether groups
    • C08G63/668—Polyesters containing oxygen in the form of ether groups derived from polycarboxylic acids and polyhydroxy compounds
    • C08G63/672—Dicarboxylic acids and dihydroxy compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G63/00—Macromolecular compounds obtained by reactions forming a carboxylic ester link in the main chain of the macromolecule
    • C08G63/68—Polyesters containing atoms other than carbon, hydrogen and oxygen
    • C08G63/685—Polyesters containing atoms other than carbon, hydrogen and oxygen containing nitrogen
    • C08G63/6854—Polyesters containing atoms other than carbon, hydrogen and oxygen containing nitrogen derived from polycarboxylic acids and polyhydroxy compounds
    • C08G63/6856—Dicarboxylic acids and dihydroxy compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Ceramic Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Polyesters Or Polycarbonates (AREA)
EP07745397A 2006-06-19 2007-06-15 Composition contenant une résine de condensation hydroxylée pour former un film sous un résist Active EP2042927B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006168294 2006-06-19
PCT/JP2007/062142 WO2007148627A1 (fr) 2006-06-19 2007-06-15 Composition contenant une résine de condensation hydroxylée pour former un film sous un résist

Publications (3)

Publication Number Publication Date
EP2042927A1 EP2042927A1 (fr) 2009-04-01
EP2042927A4 true EP2042927A4 (fr) 2010-01-06
EP2042927B1 EP2042927B1 (fr) 2012-03-07

Family

ID=38833369

Family Applications (1)

Application Number Title Priority Date Filing Date
EP07745397A Active EP2042927B1 (fr) 2006-06-19 2007-06-15 Composition contenant une résine de condensation hydroxylée pour former un film sous un résist

Country Status (7)

Country Link
US (1) US8445175B2 (fr)
EP (1) EP2042927B1 (fr)
JP (1) JP5041175B2 (fr)
KR (1) KR101423056B1 (fr)
CN (1) CN101473270B (fr)
TW (1) TWI490654B (fr)
WO (1) WO2007148627A1 (fr)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8221965B2 (en) * 2008-07-08 2012-07-17 Az Electronic Materials Usa Corp. Antireflective coating compositions
US10437150B2 (en) * 2008-11-27 2019-10-08 Nissan Chemical Industries, Ltd. Composition for forming resist underlayer film with reduced outgassing
JP5534228B2 (ja) * 2008-11-28 2014-06-25 日産化学工業株式会社 薄膜トランジスタ用ゲート絶縁膜形成剤
KR101212676B1 (ko) 2008-12-31 2012-12-14 제일모직주식회사 고분자, 고분자 조성물, 이를 포함하는 레지스트 하층막 조성물 및 이를 이용하는 재료의 패턴화 방법
JP5333737B2 (ja) * 2009-02-03 2013-11-06 日産化学工業株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
JP5888523B2 (ja) * 2011-03-15 2016-03-22 日産化学工業株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
KR101805119B1 (ko) * 2012-03-08 2017-12-06 닛산 가가쿠 고교 가부시키 가이샤 고밀착성 레지스트 하층막 형성용 조성물
US9170494B2 (en) 2012-06-19 2015-10-27 Az Electronic Materials (Luxembourg) S.A.R.L. Antireflective compositions and methods of using same
WO2014002994A1 (fr) * 2012-06-26 2014-01-03 三菱レイヨン株式会社 Procédé de production d'un composé polymère et composé polymère
JP6196194B2 (ja) * 2014-08-19 2017-09-13 信越化学工業株式会社 紫外線吸収剤、レジスト下層膜形成用組成物、及びパターン形成方法
JP6497527B2 (ja) * 2014-09-19 2019-04-10 日産化学株式会社 レジストパターン被覆用塗布液
CN107709388B (zh) * 2015-06-26 2020-07-07 日产化学工业株式会社 光固化性树脂组合物
US10844167B2 (en) * 2016-03-09 2020-11-24 Nissan Chemical Industries, Ltd. Composition for forming resist underlayer film and method for forming resist pattern using same
US11131928B2 (en) * 2016-03-30 2021-09-28 Nissan Chemical Corporation Resist underlayer film forming composition which contains compound having glycoluril skeleton as additive
JP7208591B2 (ja) * 2017-08-09 2023-01-19 日産化学株式会社 架橋性化合物を含有する光硬化性段差基板被覆組成物
KR102264693B1 (ko) 2018-06-11 2021-06-11 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법
KR102288386B1 (ko) * 2018-09-06 2021-08-10 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴 형성 방법
KR20210083258A (ko) * 2018-11-01 2021-07-06 닛산 가가쿠 가부시키가이샤 글리시딜기를 갖는 아릴렌 화합물과의 중합생성물을 포함하는 약액내성 보호막형성 조성물
JP7447892B2 (ja) * 2019-03-04 2024-03-12 日産化学株式会社 ジオール構造を末端に有する重合生成物を含む薬液耐性保護膜形成組成物
US20220297109A1 (en) * 2019-09-05 2022-09-22 Nissan Chemical Corporation Method for producing silicon-containing polymer composition
KR102563290B1 (ko) * 2020-01-31 2023-08-02 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법
WO2021182329A1 (fr) * 2020-03-13 2021-09-16 東レ・ファインケミカル株式会社 Procédé de production d'un polymère de silicone

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005098542A1 (fr) * 2004-04-09 2005-10-20 Nissan Chemical Industries, Ltd. Film antireflet pour semi-conducteur contenant un polymère de type condensation
EP1666972A1 (fr) * 2003-08-28 2006-06-07 Nissan Chemical Industries, Ltd. Composition contenant un acide de polyamide permettant la formation d'un film antireflechissant

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3482753B2 (ja) 1994-11-28 2004-01-06 日産化学工業株式会社 粉体塗料用樹脂組成物
US5780582A (en) * 1996-12-31 1998-07-14 The Dow Chemical Company Hydroxy-functionalized polyester and poly(ester ether) oligomers
JP3638924B2 (ja) * 2002-08-05 2005-04-13 昭和高分子株式会社 ポリカルボン酸樹脂およびポリカルボン酸樹脂組成物、ならびにその硬化物
US7323289B2 (en) * 2002-10-08 2008-01-29 Brewer Science Inc. Bottom anti-reflective coatings derived from small core molecules with multiple epoxy moieties
DE60330798D1 (de) * 2002-10-09 2010-02-11 Nissan Chemical Ind Ltd Zusammensetzung zur bildung einer antireflexschicht für die lithographie
JP2005099138A (ja) * 2003-09-22 2005-04-14 Fuji Photo Film Co Ltd 感光性組成物
WO2006040918A1 (fr) * 2004-10-12 2006-04-20 Nissan Chemical Industries, Ltd. Composition de formation de film antireflet lithographique, contenant une structure annulaire aromatique azotée
JP4525940B2 (ja) * 2004-10-14 2010-08-18 日産化学工業株式会社 芳香族スルホン酸エステル化合物及び光酸発生剤を含む下層反射防止膜形成組成物
EP1813987B1 (fr) * 2004-11-01 2011-08-24 Nissan Chemical Industries, Ltd. Composition contenant un ester sulfonique pour la formation d'un film antireflet pour lithographie
US7632626B2 (en) * 2005-04-19 2009-12-15 Nissan Chemical Industries, Ltd. Anti-reflective coating forming composition for lithography containing polymer having ethylenedicarbonyl structure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1666972A1 (fr) * 2003-08-28 2006-06-07 Nissan Chemical Industries, Ltd. Composition contenant un acide de polyamide permettant la formation d'un film antireflechissant
WO2005098542A1 (fr) * 2004-04-09 2005-10-20 Nissan Chemical Industries, Ltd. Film antireflet pour semi-conducteur contenant un polymère de type condensation
EP1757986A1 (fr) * 2004-04-09 2007-02-28 Nissan Chemical Industries, Ltd. Film antireflet pour semi-conducteur contenant un polymère de type condensation

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2007148627A1 *

Also Published As

Publication number Publication date
JP5041175B2 (ja) 2012-10-03
KR101423056B1 (ko) 2014-07-25
WO2007148627A1 (fr) 2007-12-27
KR20090023353A (ko) 2009-03-04
US20090317740A1 (en) 2009-12-24
EP2042927A1 (fr) 2009-04-01
CN101473270A (zh) 2009-07-01
CN101473270B (zh) 2014-08-06
JPWO2007148627A1 (ja) 2009-11-19
TWI490654B (zh) 2015-07-01
US8445175B2 (en) 2013-05-21
TW200815925A (en) 2008-04-01
EP2042927B1 (fr) 2012-03-07

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