JP7447892B2 - ジオール構造を末端に有する重合生成物を含む薬液耐性保護膜形成組成物 - Google Patents
ジオール構造を末端に有する重合生成物を含む薬液耐性保護膜形成組成物 Download PDFInfo
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- JP7447892B2 JP7447892B2 JP2021504096A JP2021504096A JP7447892B2 JP 7447892 B2 JP7447892 B2 JP 7447892B2 JP 2021504096 A JP2021504096 A JP 2021504096A JP 2021504096 A JP2021504096 A JP 2021504096A JP 7447892 B2 JP7447892 B2 JP 7447892B2
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- RKBCYCFRFCNLTO-UHFFFAOYSA-N triisopropylamine Chemical compound CC(C)N(C(C)C)C(C)C RKBCYCFRFCNLTO-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- 239000005051 trimethylchlorosilane Substances 0.000 description 1
- HADKRTWCOYPCPH-UHFFFAOYSA-M trimethylphenylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C1=CC=CC=C1 HADKRTWCOYPCPH-UHFFFAOYSA-M 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
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- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
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Classifications
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- C08G59/423—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof containing an atom other than oxygen belonging to a functional groups to C08G59/42, carbon and hydrogen
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- C—CHEMISTRY; METALLURGY
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Description
[1] 分子内に互いに隣接する2つの水酸基を少なくとも1組含む構造を、末端に有する重合体、及び有機溶剤を含む、半導体用ウエットエッチング液に対する保護膜形成組成物。
[2] 前記分子内に互いに隣接する2つの水酸基を少なくとも1組含む構造が、1,2-エタンジオール構造(A)である、[1]に記載の保護膜形成組成物。
[3] 前記1,2-エタンジオール構造が、式(1):
(式(1)中、Xは-COO-、-OCO-、-O-、-S-又は-NR1-のいずれかを表し、R1は水素原子又はメチル基を表す。Yは直接結合又は置換されてもよい炭素原子数1乃至4のアルキレン基を表す。R2、R3及びR4はそれぞれ水素原子、置換されてもよい炭素原子数1乃至10のアルキル基又は置換されてもよい炭素原子数6乃至40のアリール基であり、R2はR3又はR4と一緒になって環を形成してもよい。)
で表される構造を含む、[2]に記載の保護膜形成組成物。
[4] 前記式(1)中、R2、R3及びR4が水素原子である、[3]に記載の保護膜形成組成物。
[5] 前記式(1)中、Yがメチレン基である、[3]又は[4]に記載の保護膜形成組成物。
[6] 前記式(1)中、Xが-S-である、[3]乃至[5]のいずれか1に記載の保護膜形成組成物。
[7] 前記重合体が、ジエポキシ化合物(B)と2官能以上のプロトン発生化合物(C)との反応生成物である、[1]乃至[6]のいずれか1に記載の保護膜形成組成物。
[8] 前記2官能以上のプロトン発生化合物(C)が、水酸基、カルボキシ基、チオール基、アミノ基及びイミド基から選ばれる少なくとも1種の官能基を有する、[7]に記載の保護膜形成組成物。
[9] 前記2官能以上のプロトン発生化合物(C)が、酸二無水物である、[7]に記載の保護膜形成組成物。
[10] 前記重合体が、下記式(2):
(式(2)中、R5、R6、R7、R8、R9及びR10は、それぞれ独立に水素原子、メチル基又はエチル基を表し、Q1は2つの炭素原子間の二価の有機基を表し、m1及びm2はそれぞれ独立に0又は1を表す。)
で表される部分構造を含む、[1]乃至[9]のいずれか1に記載の保護膜形成組成物。
[11] 前記式(2)のQ1が、下記式(3):
(式(3)中、Q2は直接結合、-O-、-S-又は-S-S-で中断されていてもよい炭素原子数1乃至10のアルキレン基、-O-、-S-又は-S-S-で中断されていてもよい炭素原子数2乃至6のアルケニレン基、又は炭素原子数3乃至10の脂環式炭化水素環若しくは炭素原子数6乃至14の芳香族炭化水素環を少なくとも1つ有する二価の有機基を表し、
前記二価の有機基は、炭素原子数1乃至6のアルキル基、炭素原子数2乃至6のアルケニル基、炭素原子数2乃至6のアルキニル基、ハロゲン原子、ヒドロキシ基、ニトロ基、シアノ基、メチリデン基、炭素原子数1乃至6のアルコキシ基、炭素原子数1乃至6のアルコキシカルボニル基及び炭素原子数1乃至6のアルキルチオ基からなる群から選ばれる少なくとも1つの基で置換されていてもよい。
Z1及びZ2はそれぞれ-COO-、-OCO-、-O-、-S-のいずれかを表す。)
で表される[10]に記載の保護膜形成組成物。
[12] 前記式(2)のQ1が下記式(4):
(式(4)中、Q3は下記式(5)、式(6)又は式(7)を表す。)
(式(5)、式(6)及び式(7)中、R11、R12、R13、R14及びR15はそれぞれ独立に、水素原子、炭素原子数1乃至6のアルキル基、炭素原子数3乃至6のアルケニル基、ベンジル基又はフェニル基を表し、
前記フェニル基は、炭素原子数1乃至6のアルキル基、ハロゲン原子、ニトロ基、シアノ基、炭素原子数1乃至6のアルコキシ基及び炭素原子数1乃至6のアルキルチオ基からなる群から選ばれる少なくとも1つで置換されていてもよく、
R13とR14は互いに結合して炭素原子数3乃至6の環を形成していてもよい。)
で表される[10]に記載の保護膜形成組成物。
[13] 架橋触媒をさらに含む、[1]乃至[12]のいずれか1に記載の保護膜形成組成物。
[14] 架橋剤をさらに含む、[1]乃至[13]のいずれか1に記載の保護膜形成組成物。
[15] 界面活性剤をさらに含む、[1]乃至[14]のいずれか1に記載の保護膜形成組成物。
[16] [1]から[15]のいずれか1に記載の保護膜形成組成物からなる塗布膜の焼成物であることを特徴とする保護膜。
[17] [1]から[15]のいずれか1に記載の保護膜組成物を半導体基板上に塗布し焼成してレジスト下層膜としての保護膜を形成する工程、該保護膜上にレジスト膜を形成し、次いで露光、現像してレジストパターンを形成する工程を含み、半導体の製造に用いることを特徴とするレジストパターン付き基板の製造方法。
[18] 表面に無機膜が形成されていてもよい半導体基板上に、[1]乃至[15]のいずれか1に記載の保護膜形成組成物を用いて保護膜を形成し、前記保護膜上にレジストパターンを形成し、前記レジストパターンをマスクとして前記保護膜をドライエッチングし、前記無機膜又は前記半導体基板の表面を露出させ、ドライエッチング後の前記保護膜をマスクとして、半導体用ウエットエッチング液を用いて前記無機膜又は前記半導体基板をウエットエッチング及び洗浄する工程を含む半導体装置の製造方法。
本発明において用いられる用語は、他に特に断りのない限り、以下の定義を有する。
本願の保護膜形成組成物は、分子内に互いに隣接する2つの水酸基を少なくとも1組含む構造を末端に有する重合体、及び有機溶剤を含む、半導体用ウエットエッチング液に対する保護膜形成組成物、である。以下に順に説明する。
分子内に互いに隣接する2つの水酸基を少なくとも1組含む構造は、1,2-エタンジオール構造(A)であってもよい。
で表される構造を含んでもよい。
前記式(1)中、Yがメチレン基であってもよい。
前記式(1)中、Xが-S-であってもよい。
前記重合体が、ジエポキシ化合物(B)と2官能以上のプロトン発生化合物(C)との反応生成物であってもよい。
で表される部分構造を含むものであってもよい。
で表されてもよい。
で表されてもよい。
本発明のレジスト下層膜形成組成物は架橋剤成分を含むことができる。その架橋剤としては、メラミン系、置換尿素系、またはそれらのポリマー系等が挙げられる。好ましくは、少なくとも2個の架橋形成置換基を有する架橋剤であり、メトキシメチル化グリコールウリル、ブトキシメチル化グリコールウリル、メトキシメチル化メラミン、ブトキシメチル化メラミン、メトキシメチル化ベンゾグワナミン、ブトキシメチル化ベンゾグワナミン、メトキシメチル化尿素、ブトキシメチル化尿素、メトキシメチル化チオ尿素、またはメトキシメチル化チオ尿素等の化合物である。また、これらの化合物の縮合体も使用することができる。
本発明の保護膜形成組成物は、任意成分として、架橋反応を促進させるために、架橋触媒を含有することができる。当該架橋触媒としては、酸性化合物、塩基性化合物に加え、熱により酸又は塩基が発生する化合物を用いることができるが、架橋酸触媒であることが好ましい。酸性化合物としては、スルホン酸化合物又はカルボン酸化合物を用いることができ、熱により酸が発生する化合物としては、熱酸発生剤を用いることができる。
本発明の保護膜形成組成物は、任意成分として、半導体基板に対する塗布性を向上させるために界面活性剤を含有することができる。前記界面活性剤としては、例えばポリオキシエチレンラウリルエーテル、ポリオキシエチレンステアリルエーテル、ポリオキシエチレンセチルエーテル、ポリオキシエチレンオレイルエーテル等のポリオキシエチレンアルキルエーテル類、ポリオキシエチレンオクチルフェニルエーテル、ポリオキシエチレンノニルフェニルエーテル等のポリオキシエチレンアルキルアリールエーテル類、ポリオキシエチレン・ポリオキシプロピレンブロックコポリマー類、ソルビタンモノラウレート、ソルビタンモノパルミテート、ソルビタンモノステアレート、ソルビタンモノオレエート、ソルビタントリオレエート、ソルビタントリステアレート等のソルビタン脂肪酸エステル類、ポリオキシエチレンソルビタンモノラウレート、ポリオキシエチレンソルビタンモノパルミテート、ポリオキシエチレンソルビタンモノステアレート、ポリオキシエチレンソルビタントリオレエート、ポリオキシエチレンソルビタントリステアレート等のポリオキシエチレンソルビタン脂肪酸エステル類等のノニオン系界面活性剤、エフトップ〔登録商標〕EF301、同EF303、同EF352(三菱マテリアル電子化成株式会社製)、メガファック〔登録商標〕F171、同F173、同R-30、同R-40、同R-40-LM(DIC株式会社製)、フロラードFC430、同FC431(住友スリーエム株式会社製)、アサヒガード〔登録商標〕AG710、サーフロン〔登録商標〕S-382、同SC101、同SC102、同SC103、同SC104、同SC105、同SC106(旭硝子株式会社製)等のフッ素系界面活性剤、オルガノシロキサンポリマーKP341(信越化学工業株式会社製)を挙げることができる。これらの界面活性剤は、単独で又は二種以上を組み合わせて用いることができる。前記保護膜形成組成物が界面活性剤を含む場合、その含有量は、保護膜形成組成物の全固形分に対して、通常0.0001乃至10重量%、好ましくは0.01乃至5重量%である。
本発明の保護膜形成組成物は、上記各成分を、有機溶剤に溶解させることによって調製でき、均一な溶液状態で用いられる。
本発明の保護膜形成組成物には、吸光剤、レオロジー調整剤、接着補助剤などを添加することができる。レオロジー調整剤は、保護膜形成組成物の流動性を向上させるのに有効である。接着補助剤は、半導体基板またはレジストと下層膜の密着性を向上させるのに有効である。
本発明に係る保護膜形成組成物の固形分は通常0.1乃至70質量%、好ましくは0.1乃至60質量%とする。固形分は保護膜形成組成物から溶媒を除いた全成分の含有割合である。固形分中におけるポリマーの割合は、1乃至100質量%、1乃至99.9質量%、50乃至99.9質量%、50乃至95質量%、50乃至90質量%の順で好ましい。
以下、本発明に係る保護膜形成組成物を用いたレジストパターン付き基板の製造方法及び半導体装置の製造方法について説明する。
装置:東ソー株式会社製HLC-8320GPC
GPCカラム:Shodex〔登録商標〕・Asahipak〔登録商標〕(昭和電工(株))
カラム温度:40℃
流量:0.35mL/分
溶離液:テトラヒドロフラン(THF)
標準試料:ポリスチレン(東ソー株式会社)
メチルイソシアヌル酸ジグリシジル(製品名:MeDGIC、四国化成工業株式会社製、49.2重量%プロピレングリコールモノメチルエーテル溶液)13.00g、コハク酸2.36g、1-チオグリセロール1.08g、テトラブチルホスホニウムブロミド0.64gにプロピレングリコールモノメチルエーテル35.27gを加えた反応フラスコを窒素雰囲気下、100℃で23時間加熱撹拌した。得られた反応生成物は式(D-1)に相当し、GPCによるポリスチレン換算で測定される重量平均分子量Mwは1400であった。
テレフタル酸ジグリシジルエステル(製品名:デナコールEX-711、ナガセケムテックス株式会社製)8.00g、コハク酸2.61g、1-チオグリセロール1.19g、テトラブチルホスホニウムブロミド0.70gにプロピレングリコールモノメチルエーテル50.01gを加えた反応フラスコを窒素雰囲気下、100℃で23時間加熱撹拌した。得られた反応生成物は式(D-2)に相当し、GPCによるポリスチレン換算で測定される重量平均分子量Mwは3700であった。
テレフタル酸ジグリシジルエステル(製品名:デナコールEX-711、ナガセケムテックス株式会社製)7.00g、3,3’-ジチオプロピオン酸4.06g、1-チオグリセロール1.04g、テトラブチルホスホニウムブロミド0.41gにプロピレングリコールモノメチルエーテル50.06gを加えた反応フラスコを窒素雰囲気下、100℃で24時間加熱撹拌した。得られた反応生成物は式(D-3)に相当し、GPCによるポリスチレン換算で測定される重量平均分子量Mwは4300であった。
テレフタル酸ジグリシジルエステル(製品名:デナコールEX-711、ナガセケムテックス株式会社製)8.00g、2,2’-チオジグリコール酸3.31g、1-チオグリセロール1.19g、テトラブチルホスホニウムブロミド0.47gにプロピレングリコールモノメチルエーテル51.90gを加えた反応フラスコを窒素雰囲気下、100℃で24時間加熱撹拌した。得られた反応生成物は式(D-4)に相当し、GPCによるポリスチレン換算で測定される重量平均分子量Mwは2700であった。
フタル酸ジグリシジルエステル(製品名:デナコールEX-721、ナガセケムテックス株式会社製)8.00g、コハク酸2.47g、1-チオグリセロール1.13g、テトラブチルホスホニウムブロミド0.66gにプロピレングリコールモノメチルエーテル49.03gを加えた反応フラスコを窒素雰囲気下、100℃で23時間加熱撹拌した。得られた反応生成物は式(D-5)に相当し、GPCによるポリスチレン換算で測定される重量平均分子量Mwは2100であった。
レソルシノールジグリシジルエーテル(製品名:デナコールEX-201-IM、ナガセケムテックス株式会社製、50.0重量%プロピレングリコールモノメチルエーテル溶液)14.00g、コハク酸2.84g、1-チオグリセロール1.30g、テトラブチルホスホニウムブロミド0.76gにプロピレングリコールモノメチルエーテル40.59gを加えた反応フラスコを窒素雰囲気下、100℃で23時間加熱撹拌した。得られた反応生成物は式(D-6)に相当し、GPCによるポリスチレン換算で測定される重量平均分子量Mwは3600であった。
レソルシノールジグリシジルエーテル(製品名:デナコールEX-201-IM、ナガセケムテックス株式会社製、50.0重量%プロピレングリコールモノメチルエーテル溶液)12.00g、3,3’-ジチオプロピオン酸4.33g、1-チオグリセロール1.11g、テトラブチルホスホニウムブロミド0.44gにプロピレングリコールモノメチルエーテル41.51gを加えた反応フラスコを窒素雰囲気下、100℃で23時間加熱撹拌した。得られた反応生成物は式(D-7)に相当し、GPCによるポリスチレン換算で測定される重量平均分子量Mwは4700であった。
レソルシノールジグリシジルエーテル(製品名:デナコールEX-201-IM、ナガセケムテックス株式会社製、50.0重量%プロピレングリコールモノメチルエーテル溶液)13.00g、2,2’-チオジグリコール酸3.35g、1-チオグリセロール1.21g、テトラブチルホスホニウムブロミド0.47gにプロピレングリコールモノメチルエーテル39.61gを加えた反応フラスコを窒素雰囲気下、100℃で23時間加熱撹拌した。得られた反応生成物は式(D-8)に相当し、GPCによるポリスチレン換算で測定される重量平均分子量Mwは1900であった。
メチルイソシアヌル酸ジグリシジル(製品名:MeDGIC、四国化成工業株式会社製、49.2重量%プロピレングリコールモノメチルエーテル溶液)10.00g、コハク酸2.72g、テトラブチルホスホニウムブロミド0.49gにプロピレングリコールモノメチルエーテル27.44gを加えた反応フラスコを窒素雰囲気下、100℃で23時間加熱撹拌した。得られた反応生成物は式(E-1)に相当し、GPCによるポリスチレン換算で測定される重量平均分子量Mwは1400であった。
テレフタル酸ジグリシジルエステル(製品名:デナコールEX-711、ナガセケムテックス株式会社製)10.00g、コハク酸4.89g、エチルトリフェニルホスホニウムブロミド0.64gにプロピレングリコールモノメチルエーテル62.11gを加えた反応フラスコを窒素雰囲気下、100℃で23時間加熱撹拌した。得られた反応生成物は式(E-2)に相当し、GPCによるポリスチレン換算で測定される重量平均分子量Mwは3100であった。
テレフタル酸ジグリシジルエステル(製品名:デナコールEX-711、ナガセケムテックス株式会社製)10.00g、3,3’-ジチオプロピオン酸8.70g、ベンジルトリエチルアンモニウムクロリド0.31gにプロピレングリコールモノメチルエーテル107.76gを加えた反応フラスコを窒素雰囲気下、100℃で24時間加熱撹拌した。得られた反応生成物は式(E-3)に相当し、GPCによるポリスチレン換算で測定される重量平均分子量Mwは3200であった。
テレフタル酸ジグリシジルエステル(製品名:デナコールEX-711、ナガセケムテックス株式会社製)10.00g、2,2’-チオジグリコール酸6.21g、エチルトリフェニルホスホニウムブロミド0.64gにプロピレングリコールモノメチルエーテル67.42gを加えた反応フラスコを窒素雰囲気下、100℃で23時間加熱撹拌した。得られた反応生成物は式(E-4)に相当し、GPCによるポリスチレン換算で測定される重量平均分子量Mwは2700であった。
フタル酸ジグリシジルエステル(製品名:デナコールEX-721、ナガセケムテックス株式会社製)10.00g、コハク酸4.62g、エチルトリフェニルホスホニウムブロミド0.61gにプロピレングリコールモノメチルエーテル60.91gを加えた反応フラスコを窒素雰囲気下、100℃で27時間加熱撹拌した。得られた反応生成物は式(E-5)に相当し、GPCによるポリスチレン換算で測定される重量平均分子量Mwは1900であった。
レソルシノールジグリシジルエーテル(製品名:デナコールEX-201-IM、ナガセケムテックス株式会社製)10.00g、コハク酸6.09g、エチルトリフェニルホスホニウムブロミド0.80gにプロピレングリコールモノメチルエーテル67.55gを加えた反応フラスコを窒素雰囲気下、100℃で27時間加熱撹拌した。得られた反応生成物は式(E-6)に相当し、GPCによるポリスチレン換算で測定される重量平均分子量Mwは3000であった。
グリシジルメタクリレート5.00g、5-ビニルベンゾ[d][1,3]ジオキソール(Cool Pharm LTD.製)5.21g、2,2’-アゾビス(イソブチロニトリル)0.58g、プロピレングリコールモノメチルエーテル34.53gの溶液を滴下ロートに加え、プロピレングリコールモノメチルエーテル8.63gを加えた反応フラスコ中に窒素雰囲気下、100℃で滴下させ、20時間加熱撹拌した。得られた反応生成物は式(E-7)に相当し、GPCによるポリスチレン換算で測定される重量平均分子量Mwは9000であった。
グリシジルメタクリレート16.00g、2,2’-アゾビス(イソブチロニトリル)4.53g、プロピレングリコールモノメチルエーテル65.68gの溶液を滴下ロートに加え、プロピレングリコールモノメチルエーテル16.48gを加えた反応フラスコ中に窒素雰囲気下、100℃で滴下させ、13時間加熱撹拌した。得られた溶液30.00g(エポキシ価676g/eq)に、3,4-ジヒドロキシ安息香酸5.31g、ベンジルトリエチルアンモニウムクロリド0.20g、プロピレングリコールモノメチルエーテル17.89gを加え、窒素雰囲気下、20時間加熱還流撹拌した。得られた反応生成物は式(E-8)に相当し、GPCによるポリスチレン換算で測定される重量平均分子量Mwは24400であった。
実施例1乃至実施例8及び比較例1乃至比較例8で調製された保護膜形成組成物のそれぞれをスピンコーターにてシリコンウェハー上に塗布(スピンコート)した。塗布後のシリコンウェハーをホットプレート上で250℃、1分間加熱し、膜厚100nmの被膜(保護膜)を形成した。次に、保護膜のレジスト溶剤耐性を確認するため、保護膜形成後のシリコンウェハーを、プロピレングリコールモノメチルエーテルとプロピレングリコールモノメチルエーテルアセテートとを重量比7対3で混合した溶剤に1分間浸漬し、スピンドライ後に100℃、30秒間ベークした。混合溶剤を浸漬する前後の保護膜の膜厚を光干渉膜厚計(製品名:ナノスペック6100、ナノメトリクス・ジャパン株式会社製)で測定した。
酸性過酸化水素水への耐性評価として、実施例1乃至実施例8及び比較例1乃至比較例8で調製された保護膜形成組成物のそれぞれを50nm膜厚のTiN蒸着基板に塗布し、250℃、1分間加熱することで、膜厚100nmとなるように保護膜を成膜した。次に、85%リン酸、33%過酸化水素をそれぞれ重量比1対1となるように混合し、酸性過酸化水素水を調製した。前記の保護膜形成組成物を塗布したTiN蒸着基板を60℃に加温したこの酸性過酸化水素水中に浸漬し、浸漬直後から保護膜が基板から剥離するまでの時間(剥離時間)を測定した。酸性過酸化水素水への耐性試験の結果を表2に示す。尚、剥離時間が長くなるほど、酸性過酸化水素水を用いたウエットエッチング液への耐性が高いと言える。
酸性過酸化水素水への耐性評価として、実施例1乃至実施例8及び比較例1乃至比較例8で調製された保護膜形成組成物のそれぞれを50nm膜厚のTiN蒸着基板に塗布し、250℃、1分間加熱することで、膜厚100nmとなるように保護膜を成膜した。次に、85%リン酸、水をそれぞれ重量比1対1となるように混合し、酸性過酸化水素水を調製した。前記の保護膜形成組成物を塗布したTiN蒸着基板を60℃に加温したこの酸性過酸化水素水中に浸漬し、浸漬直後から保護膜が基板から剥離するまでの時間(剥離時間)を測定した。酸性過酸化水素水への耐性試験の結果を表2に示す。尚、剥離時間が長くなるほど、酸性過酸化水素水を用いたウエットエッチング液への耐性が高いと言える。
エッチング選択比の評価として、前記の実施例1乃至実施例8及び比較例7乃至比較例8で調製された保護膜形成組成物のそれぞれをシリコンウェハー上に塗布し、250℃、1分間加熱することで、膜厚100nmとなるように保護膜を成膜した。次に、成膜した保護膜と半導体リソグラフィー用レジスト下層膜(製品名:ARC(登録商標)29A、日産化学株式会社製)をドライエッチング装置(製品名:RIE-10NR、サムコ株式会社製)を用い、窒素ガスによるドライエッチングを行うことで、保護膜のドライエッチング速度の比(ドライエッチング速度の選択比)を測定した。エッチング選択比の測定結果を表3に示す。尚、エッチング選択比が大きくなるほど、ドライエッチング速度が速いと言える。
パターン基板上での平坦化性試験として、膜厚5nmでTiNを蒸着した深さ200nm、トレンチ幅50nmを有するシリコン基板に、実施例1乃至実施例8及び比較例7乃至比較例8で調製された保護膜形成組成物を塗布し、250℃、1分間加熱した。尚、保護膜形成組成物はシリコンウェハー上で250℃、1分間加熱した際に膜厚100nmとなるように調製した。パターン基板上に保護膜を成膜後、ピッチ100nmのデンスパターンエリアとパターンが形成されていないオープンエリアにおける膜厚を走査型電子顕微鏡(製品名:S-4800、日立ハイテクノロジーズ社製)を用いて観察し、デンスエリアとオープンエリアの膜厚の差(膜厚バイアス)を測定した。膜厚バイアスの測定結果を表3に示す。尚、膜厚バイアスが小さくなるほど、デンスエリアとオープンエリアの膜厚差が小さくなるため、パターンを有する下地基板上でより高平坦に塗布できると言える。
Claims (16)
- 分子内に互いに隣接する2つの水酸基を少なくとも1組含む構造を、末端に有する重合体、及び有機溶剤を含む、半導体用ウエットエッチング液に対する保護膜形成組成物であって、
前記重合体が、ジエポキシ化合物(B)と2官能以上のプロトン発生化合物(C)との反応生成物であり、
前記分子内に互いに隣接する2つの水酸基を少なくとも1組含む構造が、1,2-エタンジオール構造(A)であり、
前記1,2-エタンジオール構造が、式(1):
(式(1)中、Xは-S-を表し、R1は水素原子又はメチル基を表す。Yは直接結合又は置換されてもよい炭素原子数1乃至4のアルキレン基を表す。R2、R3及びR4はそれぞれ水素原子、置換されてもよい炭素原子数1乃至10のアルキル基又は置換されてもよい炭素原子数6乃至40のアリール基であり、R2はR3又はR4と一緒になって環を形成してもよい。)
で表される構造を含む、保護膜形成組成物。 - 前記式(1)中、R 2 、R 3 及びR 4 が水素原子である、請求項1に記載の保護膜形成組成物。
- 前記式(1)中、Yがメチレン基である、請求項1又は2に記載の保護膜形成組成物。
- 前記分子内に互いに隣接する2つの水酸基を少なくとも1組含む構造が、下記式(A-4)で表される化合物によって形成される1,2-エタンジオール構造(A)である、請求項1に記載の保護膜形成組成物。
- 前記半導体用ウエットエッチング液が酸性過酸化水素水又は塩基性過酸化水素水である、請求項1乃至4のいずれか1項に記載の保護膜形成組成物。
- 前記2官能以上のプロトン発生化合物(C)が、水酸基、カルボキシ基、チオール基、アミノ基及びイミド基から選ばれる少なくとも1種の官能基を有する、請求項1に記載の保護膜形成組成物。
- 前記2官能以上のプロトン発生化合物(C)が、酸二無水物である、請求項6に記載の保護膜形成組成物。
- 前記式(2)のQ 1 が、下記式(3):
(式(3)中、Q 2 は直接結合、-O-、-S-又は-S-S-で中断されていてもよい炭素原子数1乃至10のアルキレン基、-O-、-S-又は-S-S-で中断されていてもよい炭素原子数2乃至6のアルケニレン基、又は炭素原子数3乃至10の脂環式炭化水素環若しくは炭素原子数6乃至14の芳香族炭化水素環を少なくとも1つ有する二価の有機基を表し、
前記二価の有機基は、炭素原子数1乃至6のアルキル基、炭素原子数2乃至6のアルケニル基、炭素原子数2乃至6のアルキニル基、ハロゲン原子、ヒドロキシ基、ニトロ基、シアノ基、メチリデン基、炭素原子数1乃至6のアルコキシ基、炭素原子数1乃至6のアルコキシカルボニル基及び炭素原子数1乃至6のアルキルチオ基からなる群から選ばれる少なくとも1つの基で置換されていてもよい。
Z 1 及びZ 2 はそれぞれ-COO-、-OCO-、-O-、-S-のいずれかを表す。)
で表される請求項8に記載の保護膜形成組成物。 - 前記式(2)のQ 1 が下記式(4):
(式(4)中、Q 3 は下記式(5)、式(6)又は式(7)を表す。)
(式(5)、式(6)及び式(7)中、R 11 、R 12 、R 13 、R 14 及びR 15 はそれぞれ独立に、水素原子、炭素原子数1乃至6のアルキル基、炭素原子数3乃至6のアルケニル基、ベンジル基又はフェニル基を表し、
前記フェニル基は、炭素原子数1乃至6のアルキル基、ハロゲン原子、ニトロ基、シアノ基、炭素原子数1乃至6のアルコキシ基及び炭素原子数1乃至6のアルキルチオ基からなる群から選ばれる少なくとも1つで置換されていてもよく、
R 13 とR 14 は互いに結合して炭素原子数3乃至6の環を形成していてもよい。)
で表される請求項8に記載の保護膜形成組成物。 - 架橋触媒をさらに含む、請求項1乃至請求項10のいずれか1項に記載の保護膜形成組成物。
- 架橋剤をさらに含む、請求項1乃至請求項11のいずれか1項に記載の保護膜形成組成物。
- 界面活性剤をさらに含む、請求項1乃至請求項12のいずれか1項に記載の保護膜形成組成物。
- 請求項1から請求項13のいずれか1項に記載の保護膜形成組成物からなる塗布膜の焼成物であることを特徴とする半導体用ウエットエッチング液に対する保護膜。
- 請求項1から請求項13のいずれか1項に記載の保護膜組成物を半導体基板上に塗布し焼成してレジスト下層膜としての、半導体用ウエットエッチング液に対する保護膜を形成する工程、該保護膜上にレジスト膜を形成し、次いで露光、現像してレジストパターンを形成する工程を含み、半導体の製造に用いることを特徴とするレジストパターン付き基板の製造方法。
- 表面に無機膜が形成されていてもよい半導体基板上に、請求項1乃至請求項13のいずれか1項に記載の保護膜形成組成物を用いて半導体用ウエットエッチング液に対する保護膜を形成し、前記保護膜上にレジストパターンを形成し、前記レジストパターンをマスクとして前記保護膜をドライエッチングし、前記無機膜又は前記半導体基板の表面を露出させ、ドライエッチング後の前記保護膜をマスクとして、半導体用ウエットエッチング液を用いて前記無機膜又は前記半導体基板をウエットエッチング及び洗浄する工程を含む半導体装置の製造方法。
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TW202104329A (zh) | 2021-02-01 |
KR20210135252A (ko) | 2021-11-12 |
US20220145119A1 (en) | 2022-05-12 |
JP2023184588A (ja) | 2023-12-28 |
JPWO2020179757A1 (ja) | 2020-09-10 |
WO2020179757A1 (ja) | 2020-09-10 |
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