EP2010964A1 - Système d'exposition par projection et son utilisation - Google Patents

Système d'exposition par projection et son utilisation

Info

Publication number
EP2010964A1
EP2010964A1 EP07724535A EP07724535A EP2010964A1 EP 2010964 A1 EP2010964 A1 EP 2010964A1 EP 07724535 A EP07724535 A EP 07724535A EP 07724535 A EP07724535 A EP 07724535A EP 2010964 A1 EP2010964 A1 EP 2010964A1
Authority
EP
European Patent Office
Prior art keywords
mask
mirror
substrate
projection exposure
exposure system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP07724535A
Other languages
German (de)
English (en)
Inventor
Rolf Freimann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Publication of EP2010964A1 publication Critical patent/EP2010964A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/18—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical projection, e.g. combination of mirror and condenser and objective
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems

Definitions

  • the invention relates to a projection exposure system for imaging an object field arranged in an object plane into an image field of an image plane and to a use of such a projection exposure system.
  • the miniaturized devices and structures include, for example, integrated circuits, liquid crystal elements, micromechanical components, and the like.
  • a radiation-sensitive substrate such as a wafer provided with a radiation-sensitive layer (resist)
  • a mask reticle
  • the exposed radiation-sensitive layer is then developed and peeled off at the exposed or unexposed areas of the underlying wafer. In the areas where the layer is peeled off, the surface of the wafer is accessible for subsequent process steps, while the surface of the wafer in the areas where the layer is not detached is protected from the subsequent process steps.
  • the subsequent process steps include, for example, etching, oxidizing, implanting, depositing other layers, and the like.
  • NA the image - side numerical aperture of the
  • Imaging optics ⁇ is the wavelength of light used for imaging, and k is a parameter given by the process.
  • imaging optics having a larger numerical aperture are being developed to increase the resolution, and shorter wavelengths of light have been used for imaging.
  • the invention proposes a projection exposure system for imaging an object field arranged in an object plane into an image field of an image plane, wherein the projection exposure system has a mask holder for selectively holding a mask of a plurality of masks in an object plane, and a catoptric Imaging optics for transmitting a pattern defined by the arranged in the object plane mask in an image plane of the imaging optics, wherein the imaging optics comprises a plurality of mirrors.
  • the projection exposure system is characterized in that at least one of the mirrors is a phase mask formed mirror comprising a substrate having a surface on which a plurality of dielectric layers are mounted, the surface of the substrate comprising contiguous regions which are parallel extend to a layer direction of the dielectric layer mounted thereon, wherein adjacent regions are separated by flanks extending transversely to the layer direction.
  • a catoptric imaging optics contains only mirrors for imaging an object with light.
  • a catoptric imaging optics is especially advantageous if for Figure light of very short wavelength is used, such as ultraviolet light or extreme ultraviolet light (EUV). Light of such short wavelengths is strongly absorbed by transmissive optical elements and at the same time only weakly refracted.
  • EUV extreme ultraviolet light
  • the use of very short wavelength light over the use of longer wavelength light in a lithography system with imaging optics for imaging a mask on a semiconductor has the advantage of reducing a smallest feature size that can be produced by the lithography system.
  • a mirror designed as a phase mask is integrated in a lithography system with catoptric imaging optics according to the first aspect of the present invention, then the maximum of the point image function resulting in the imaging optics with aperture-limited resolution can be narrowed.
  • phase mask designates a structure having different partial regions which influence the phase of the imaging radiation interacting with the partial regions differently.
  • the amplitudes of the imaging radiation interacting with the different partial areas are also influenced differently.
  • the mirror designed as a phase mask can be produced on the basis of its simple structure using conventional lithographic techniques known to the person skilled in the art.
  • an equal number of dielectric layers are provided on a plurality of contiguous regions of the surface of the substrate of the at least one phase mask mirror Layers attached.
  • a structuring of the applied layers results according to a structuring of the contiguous regions of the surface of the substrate.
  • the areas of the surface of the at least one mirror formed as a phase mask are alternately projecting on the substrate and lowered areas in the substrate.
  • a lowered area of the surface in this application is understood to mean a region which is at least partially surrounded by one or more other surfaces of the substrate in such a way that at least some of the other surfaces project from the middle surface of the substrate.
  • a protruding area is complementary to a lowered area.
  • the invention proposes a projection exposure system for imaging an object field arranged in an object plane into an image field of an image plane, wherein the projection exposure system has a mask holder for selectively holding a mask of a plurality of masks in an object plane, and a catoptric Imaging optics for transmitting a pattern defined by the arranged in the object plane mask in an image plane of the imaging optics, wherein the imaging optics comprises a plurality of mirrors.
  • the projection exposure system is characterized in that at least one of the mirrors is a mirror formed as a phase mask, which comprises a substrate having a surface on which a plurality of dielectric layers is mounted, wherein the mirror has contiguous contiguous regions which face each other a number of dielectric layers mounted on the substrate.
  • the at least one phase mask formed mirror obtains a structured reflective surface by arranging various different dielectric layers on a substantially unstructured substrate. This can further simplify production of the mirror formed as a phase mask.
  • juxtaposed portions of the at least one mirror mask formed as a phase mask alternately have a larger and a smaller number of dielectric layers mounted on the substrate.
  • the portions of the mirror mask formed as a phase mask have a shape of elongated strips.
  • the regions can extend along circular lines around an optical axis of the imaging optics. This embodiment is particularly suitable for rotationally symmetrical imaging optics.
  • a number of the different regions of the mirror can be greater than 50, in particular greater than 100.
  • the materials of the dielectric layers of the at least one phase mask mirror comprise MoSi layers.
  • MoSi layers in the context of this application comprise layers of Mo, Si, MoSi 2 and Mo 5 Si 3 . These layers may be arranged alternately or comprising further intermediate layers.
  • protective or intermediate layers can be binary compounds of Mo and Si with B, C, N, O, F, in particular C, N and O are used. In particular, C can be used as the intermediate layer.
  • the portions of the phase mask formed mirror are configured to increase an axial dot image dimension (DOF) of the imaging optics image and / or to reduce a lateral dot image dimension of the imaging optics image.
  • DOE axial dot image dimension
  • the mirror designed as a phase mask it is possible to minimize secondary maxima of the dot image function so that the exposure threshold value of the resist is exceeded only in the area of the main maximum when an wafer is exposed, which is then narrower in the case of an inserted mirror formed as a phase mask the maximum at aperture-related resolution limit. Consequently, a suitable mirror formed as a phase mask can contribute to an increase in the resolution achievable with the lithographic process.
  • the mirror formed as a phase mask is arranged in the vicinity of a pupil of the imaging optics.
  • Near the pupil in the context of the present invention means that a distance along the beam path between the pupil and the pupil-shaped mirror arranged as a phase mask is smaller than a 0.3-fold, in particular a 0.2-fold, spacing between the pupil Pupil and one of the pupil next to the arranged field level.
  • distance along the beam path in a catoptric system means that the beam path running between mirrors is unfolded in order to obtain a folded, unidirectional beam path. In this unfolded beam path, a distance between elements of the system is then measured.
  • a lithography method using the above-explained projection exposure system is proposed.
  • multiple masks are used to expose the substrate to several different predetermined radiation intensity distributions.
  • a plurality of different mirrors formed as phase masks are provided, wherein each mask is associated with a mirror formed as a phase mask, so that during the illumination of a first mask for the exposure of the substrate having a first predetermined radiation intensity distribution, a first formed as a phase mask mirror is inserted into the imaging beam path and during the exposure of a second mask for exposing the substrate to a second predetermined radiation intensity distribution, a second mirror formed as a phase mask is inserted in the imaging beam path. Due to the association between the masks and the mirrors formed as phase masks, it is possible to configure the respective mirror formed as a phase mask in such a way that the result of a desired radiation intensity distribution is best achieved according to the circumstances of the respective mask.
  • Exposure to the various predetermined radiation intensity distributions may be made on a same radiation sensitive layer (resist) of the substrate, i. a multiple exposure of the radiation-sensitive layer with different predetermined radiation intensity distributions can take place.
  • the different radiation intensity distributions can also be exposed to different radiation-sensitive layers in successive process steps of the lithography process.
  • a lithography method using one of the above-explained projection exposure systems is proposed, in which a same radiation-sensitive layer of the substrate is exposed successively with different radiation intensity distributions, ie a multiple exposure is performed.
  • different masks are arranged in the object plane, wherein, however, the same phase mirror formed in all the exposures in the imaging beam path is arranged.
  • two, three or more different radiation intensity distributions are successively exposed to the same radiation-sensitive layer.
  • FIG. 1 shows schematically a view of an embodiment of a projection exposure system according to the invention, which comprises mirrors as optical elements,
  • FIG. 2 schematically shows a partial view of the embodiment of an inventive device shown in FIG.
  • Projection exposure system comprising a mirror formed as a phase mask
  • FIG. 3 schematically shows a view of an embodiment of a mirror designed as a phase mask in a projection exposure system according to the invention
  • FIG. 4 schematically shows steps of a manufacturing method of a mirror mask in a projection exposure system according to a first aspect of the present invention
  • FIG. 5 schematically shows steps of a manufacturing method of a mirror designed as a phase mask in FIG a projection exposure system according to a second aspect of the present invention
  • FIG. 6 shows an explanation of process steps of the lithography method according to an embodiment of the present invention
  • Figure 7 is an illustration of process steps of the lithography process according to an embodiment of the invention, wherein a multiple exposure is carried out with three different radiation intensity distributions.
  • FIG. 1 shows in a highly schematic representation a projection exposure system 1 for reducing the size of an object plane 3, in which a mask 7 is arranged, into an image plane 5, in which a surface 15 of a semiconductor wafer 13 is arranged.
  • a mask 7 is held on a mask carrier 9 in such a way that pattern-forming structures of the mask 7 are arranged in the object plane 3.
  • a semiconductor wafer 13 is held so that a surface 15 of the wafer provided with a radiation-sensitive layer (resist) is arranged in the image plane 5.
  • a radiation-sensitive layer resist
  • a catoptric imaging optics 17 comprises a plurality of mirrors for providing an imaging beam path, which is shown in FIG. 1 by three exemplary beams 21. The rays emanate at different angles from an exemplary point 23 in the object plane 3 and form this point 23 onto a point 25 in the image plane 5.
  • a pupil plane of the imaging optics 17 is provided with the reference numeral 27 in FIG.
  • the imaging optics 3 comprises six mirrors M1, M2, M3, M4, M5 and M6, at which the imaging beam path 21 starting from the object plane 3 is reflected successively to project into the image plane 5 a defined by the mask 7 pattern.
  • the imaging optics 3 is configured such that an intermediate image is generated between the object plane 3 and the image plane 5, wherein a point 41 shown by way of example in FIG. 1 lies in the corresponding intermediate image plane.
  • the mirror surfaces of the mirrors M1, M2,... M6 are each designed to be rotationally symmetrical with respect to a common optical axis 43, although the beam path itself is not rotationally symmetrical with respect to the common axis 43. Accordingly, the individual mirrors are "Off-
  • Axis mirrors " which are so trimmed that the parts of the beam path not reflected on a respective mirror can pass this mirror and are not blocked by the mirrors.
  • FIG. 2 is a partial view of the projection exposure system of FIG. 1, which comprises a schematic sectional view of the mirror M2 of FIG.
  • the mirror M2 is a mirror formed with a phase mask 33.
  • the mirror M2 formed as a phase mask comprises juxtaposed reflective areas which cause in the imaging beam path the beams 21 reflected from different areas of the mirror to travel through different optical path lengths, so that beams emerging from different areas of the laser beam Phase mask trained mirror M2 are reflected, experienced phase shifts relative to each other.
  • the phase mask 33 of the mirror M2 formed as a phase mask is arranged close to the pupil plane 27.
  • the mirror M2 formed as a phase mask is substantially less far away from a pupil 27 arranged between the object plane 3 and the intermediate image plane 41 than the pupil itself is removed from the object plane 3 or from the intermediate image plane 41.
  • a distance d between the pupil plane and the mirror M2 formed as a phase mask is substantially none other than a distance (the sum of the Stretching Sl and S2 in Figure 2) from the pupil plane 27 along the beam path 21 to the object plane 3rd
  • a mirror surface 45 of the mirror M2 has a shape that is rotationally symmetric with respect to the axis 43. However, the mirror M2 is cut along an edge 47 in order not to block the beam path. The beam path strikes the same in a region 49 of the mirror surface 45 and is reflected by the mirror surface 45 in this region 49. In the region 49, a phase mask 33, which is likewise shown schematically in FIG. 2, is applied to the mirror surface 45.
  • the phase mask 33 arranged on the mirror M2 constructed as a phase mask is configured in such a way that an axial point image dimension of the image is greater due to the presence of the phase mask 33 in the beam path compared to a situation in which the phase mask would not be arranged in the imaging beam path. Additionally or alternatively, the phase mask may also be configured such that a lateral dot image dimension of the image due to the presence of the phase mask in the imaging beam path is smaller than compared to a situation in which the phase mask is not arranged in the imaging beam path.
  • FIG. 3 shows an embodiment of the mirror M2 embodied as a phase mask in a plan view along the optical axis 43.
  • the contiguous regions (69, 71), from which incident light rays can be reflected after passing through different optical path lengths, extend in a striped manner adjacent to each other.
  • the regions extend along circular lines having their center in the optical axis 43.
  • FIGS. 4a to 4d schematically show steps of a manufacturing method of a mirror mask in a projection exposure system according to a first aspect of the present invention.
  • the formed as a phase mask mirror M2 is shown in side view, i. in use of the mirror M2 in a projection exposure system, there is a direction of light incidence in the plane of drawing of FIGS. 4a to 4d.
  • a resist 66 is applied to a substrate 65 in a pattern.
  • parts of the substrate 65 which are not covered by resist 66 are partially etched out to form regions 71 of a surface of the substrate 65. Adjacent areas 71 are separated from one another by flanks 75. Thereafter, the resist pattern as illustrated in Fig. 4c is removed.
  • a plurality of dielectric layers 73 are applied to the areas 71 of the surface of the substrate.
  • the dielectric layers 73 comprise two materials 73a and 73b having different dielectric properties, and thus different optical refractive indices.
  • a multiple layer 73 is formed by alternately applying the two different materials to the areas 71 of the surface of the substrate 65.
  • layers of Mo, Si, MoSi 2 and Mo 5 Si 3 may be used as materials having different dielectric properties.
  • Si Y or Be can also be used.
  • These layers may be arranged alternately or comprising further intermediate layers.
  • protection or Interlayers may be binary compounds of Mo and Si with B, C, N, O, F, in particular C, N and 0 are used.
  • C can be used as the intermediate layer.
  • a total of 40 layers are applied, with each layer having a thickness of 3 to 4 nm.
  • FIGS. 5a to 5d schematically show steps of a manufacturing method of a phase mask mirror M2 'in a projection exposure system according to a second aspect of the present invention.
  • the orientation of the mirror M2 ' is like that of the mirror M2 of FIGS. 4a to 4d.
  • FIG. 5 a first of all a multilayer 67, which is composed of alternating dielectric layers 67 a and 67 b of two materials with different dielectric properties, is applied to a surface 65 a of a substrate 65.
  • FIG. 5b shows a step after application of a resist 66 in a pattern onto the multilayer 67.
  • FIG. 5c illustrates a state after partial etching away of the multilayer 67 in regions of the multilayer which are not covered by resist 66.
  • a mirror M2 'formed as a phase mask is obtained.
  • the mirror M2 ' has juxtaposed regions 69 which differ with respect to a number of the dielectric layers 67 mounted on the substrate 65. Materials and thicknesses of the dielectric layers may be selected as described with respect to the embodiment described in FIG.
  • phase mask 33 may also be mounted on a surface of the mirror M5 which is also close to a further pupil of the imaging beam path arranged between the intermediate image plane 41 and the image plane 5 is arranged.
  • FIGS. 6a and 6b serve to illustrate a lithography method according to an embodiment of the invention.
  • FIG. 6a schematically shows, in the upper diagram by a line 51, a structure of a mask arranged in an object plane of a lithography system.
  • a transmission T of the mask is applied at the top and a lateral position coordinate of the mask, which is formed as an absorption mask, is applied to the right.
  • the mask could be formed as a phase mask, which generates a phase offset ⁇ with a corresponding course.
  • dashed line 53 shows a radiation intensity profile which would result in the object plane if no phase mask were arranged on a mirror in the vicinity of the pupil in the imaging beam path
  • a solid line 55 represents a radiation intensity distribution which results in the object plane in the form of a phase mask mirror arranged in the beam path.
  • a line 57 in the middle graph of FIG. 6a represents an exposure threshold value of a resist applied to the wafer surface, after which the resist is then exposed when the radiation intensity directed thereto exceeds the threshold value 57. It can be seen that a width of the regions in which the exposure intensity 55 exceeds the threshold value 57 with a phase mask arranged in the beam path on a mirror at a predefined exposure time is substantially smaller than a corresponding width of the exposure intensity 53 when not arranged in the beam path on a mirror phase mask.
  • structures symbolized by solid lines 61 which can be produced in the wafer after exposure with a phase mask arranged on a mirror, are substantially smaller than by dashed lines 63 symbolized structures after exposure without a phase mask arranged on a mirror.
  • the exposure by the phase mask disposed in the imaging optics results in a reduction of the smallest possible structures 61 that can be generated with a given mask.
  • a given mask structure 51 it is not possible to further reduce a distance between adjacent structures 61.
  • FIG. 6b shows schematically in FIG. 6b.
  • the line 51 ' represents a structure of a second mask, which is offset in the lateral direction compared to the structure 51 of FIG. 4a.
  • the mask structure 51 'generates in the object plane an intensity distribution 55' shown in the middle graph of FIG.
  • FIGS. 7a, 7b and 7c illustrate schematically, in analogy to FIGS. 6a and 6b, a lithography process in which successive exposures of a same resist are carried out in order to further increase a density of the fabricated structures.
  • the invention proposes a lithography method which uses a projection exposure system with catoptric imaging optics, which comprises a mirror formed as a phase mask in the imaging beam path, which has contiguous areas with dielectric layers attached thereto.
  • the areas of the mirror formed as a phase mask are configured such that an axial dot image dimension (DOF) of the image is increased or / and a lateral dot image dimension of the image is reduced.
  • DOF axial dot image dimension
  • a multiple exposure of a same radiation-sensitive substrate is made in order to achieve an increase in the resolution or reduction of the finished web structures.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lenses (AREA)

Abstract

La présente invention concerne un procédé de lithographique qui utilise un système d'exposition par projection avec optique de réalisation catoptrique, qui comprend un miroir conçu comme masque de phase dans le chemin optique de réalisation, ledit miroir comportant des zones cohérentes sur lesquelles sont disposées des couches diélectriques. Les zones du miroir utilisé comme masque de phase sont de préférence configurées de telle sorte qu'une dimension axiale d'image ponctuelle (DOF) de la réalisation est agrandie et/ou qu'une dimension latérale d'image ponctuelle de la réalisation est réduite. On entreprend de préférence une exposition plurielle d'un même substrat sensible aux rayonnements afin d'obtenir une élévation de la résolution et/ou une réduction des structures de fabrication (61, 61').
EP07724535A 2006-04-24 2007-04-24 Système d'exposition par projection et son utilisation Withdrawn EP2010964A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006018928A DE102006018928A1 (de) 2006-04-24 2006-04-24 Projektionsbelichtungssystem und Verwendung desselben
PCT/EP2007/003605 WO2007121990A1 (fr) 2006-04-24 2007-04-24 Système d'exposition par projection et son utilisation

Publications (1)

Publication Number Publication Date
EP2010964A1 true EP2010964A1 (fr) 2009-01-07

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Country Status (6)

Country Link
US (1) US8908149B2 (fr)
EP (1) EP2010964A1 (fr)
JP (1) JP5429937B2 (fr)
KR (1) KR101362497B1 (fr)
DE (1) DE102006018928A1 (fr)
WO (1) WO2007121990A1 (fr)

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US20090097000A1 (en) 2009-04-16
WO2007121990A1 (fr) 2007-11-01
KR101362497B1 (ko) 2014-02-21
JP5429937B2 (ja) 2014-02-26
US8908149B2 (en) 2014-12-09
DE102006018928A1 (de) 2007-11-08
JP2009534860A (ja) 2009-09-24
KR20090015028A (ko) 2009-02-11

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