EP2005803B1 - Pertes de puissance reduites dans les ballasts electroniques - Google Patents

Pertes de puissance reduites dans les ballasts electroniques Download PDF

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Publication number
EP2005803B1
EP2005803B1 EP07727835A EP07727835A EP2005803B1 EP 2005803 B1 EP2005803 B1 EP 2005803B1 EP 07727835 A EP07727835 A EP 07727835A EP 07727835 A EP07727835 A EP 07727835A EP 2005803 B1 EP2005803 B1 EP 2005803B1
Authority
EP
European Patent Office
Prior art keywords
power
electronic ballast
transistor
power semiconductor
steady
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Not-in-force
Application number
EP07727835A
Other languages
German (de)
English (en)
Other versions
EP2005803A1 (fr
EP2005803B8 (fr
Inventor
Michele Tiso
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Osram GmbH
Original Assignee
Osram GmbH
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Filing date
Publication date
Application filed by Osram GmbH filed Critical Osram GmbH
Publication of EP2005803A1 publication Critical patent/EP2005803A1/fr
Publication of EP2005803B1 publication Critical patent/EP2005803B1/fr
Application granted granted Critical
Publication of EP2005803B8 publication Critical patent/EP2005803B8/fr
Not-in-force legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B41/00—Circuit arrangements or apparatus for igniting or operating discharge lamps
    • H05B41/14—Circuit arrangements
    • H05B41/26—Circuit arrangements in which the lamp is fed by power derived from dc by means of a converter, e.g. by high-voltage dc
    • H05B41/28—Circuit arrangements in which the lamp is fed by power derived from dc by means of a converter, e.g. by high-voltage dc using static converters
    • H05B41/282—Circuit arrangements in which the lamp is fed by power derived from dc by means of a converter, e.g. by high-voltage dc using static converters with semiconductor devices
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B41/00—Circuit arrangements or apparatus for igniting or operating discharge lamps
    • H05B41/14—Circuit arrangements
    • H05B41/26—Circuit arrangements in which the lamp is fed by power derived from dc by means of a converter, e.g. by high-voltage dc
    • H05B41/28—Circuit arrangements in which the lamp is fed by power derived from dc by means of a converter, e.g. by high-voltage dc using static converters
    • H05B41/282—Circuit arrangements in which the lamp is fed by power derived from dc by means of a converter, e.g. by high-voltage dc using static converters with semiconductor devices
    • H05B41/2821—Circuit arrangements in which the lamp is fed by power derived from dc by means of a converter, e.g. by high-voltage dc using static converters with semiconductor devices by means of a single-switch converter or a parallel push-pull converter in the final stage

Definitions

  • the present invention relates to an electronic ballast (ECG) having a first power semiconductor, in particular a MOS-FET whose power is dimensioned to a starting power.
  • ECG electronic ballast
  • ECGs Electronic ballasts
  • a low-frequency line voltage is first rectified and then converted by means of a high-frequency inverter into a high-frequency square-wave voltage.
  • the efficiency of the lamps is increased and achieved a longer life.
  • discharge lamps such as fluorescent tubes or energy-saving lamps
  • the ignition of the lamp must be done with a high voltage, for which the ECG must provide a high so-called starting power.
  • this starting power can amount to several hundred volts to several kV.
  • the US 4,066,930 discloses a circuit arrangement for powering fluorescent lamps.
  • Object of the present invention is therefore to provide an electronic ballast, the efficiency is improved over conventional solutions.
  • an electronic ballast having a first power semiconductor, in particular a MOS-FET whose power is dimensioned for a starting power, wherein the electronic ballast comprises at least a second power semiconductor, which has a different power than the first power semiconductor.
  • both power semiconductors can be used in the start-up phase, ie when starting, which makes it possible to provide a very high starting power, while in static operation the first power semiconductor is deactivated and only the second power semiconductor provides the static power.
  • This allows the use of smaller sized power semiconductors, resulting in significant power savings, which in turn improves the overall efficiency of the system.
  • the power semiconductors are dimensioned differently.
  • the power of the second power semiconductor can only be 1/3 of the power of the first power semiconductor.
  • a control unit which controls the activation or deactivation of the power semiconductors. If the power semiconductors are also arranged parallel to one another, the drive can be that a switch, for example a breaker contact, is activated, which deactivates the first power semiconductor, so that only the second power semiconductor provides the power.
  • FIGS. 1 to 3 only the components of the electronic ballast that are relevant to the invention are shown. In this case, the same reference numerals designate identical or analogous components.
  • FIG. 1 shows a partial view of a circuit diagram of a conventional electronic ballast and shows as selected components of the electronic ballast, a driver 2 which outputs a square-wave control signal, a power semiconductor 4 adapted to output the power required for starting a lamp, not shown, a transformer 6 for controlling the voltage supplied to the lamp with an output 8, for example, can be connected to such a lamp.
  • the power semiconductor 4 used in the prior art must provide the voltage necessary for ignition of gas discharge lamps. Due to the high voltage requirement, powerful power semiconductors, such as powerful MOS-FETs, are required. Although such MOS-FETs can easily provide the required power for igniting a gas discharge lamp, but consume even in the static operation of the lamp - ie after the ignition process - a lot of energy, so that sets a high power dissipation. This in turn results in a lower efficiency of the electronic ballast. In addition, the MOS FETs used here are relatively large, so that a desired miniaturization of the electronic ballast component-related limits are set.
  • FIGS. 2a and 2 B Such an electronic ballast according to the invention is disclosed in FIGS. 2a and 2 B shown. It shows FIG. 2a the circuit of the electronic ballast in the start state and FIG. 2b the circuit of the electronic ballast in static operation.
  • FIG. 2a is the start-up phase of an electronic ballast shown, ie the state in which a high voltage must be available to ignite, for example, a gas discharge lamp.
  • the switch 10 in a closed position, whereby both power semiconductors 4, 4 'are connected in parallel, so that complement their performance.
  • the first power semiconductor 4 can be deactivated. This will, as in FIG. 2b shown, the switch 10 is opened, so that a power is delivered only via the second power semiconductor 4 '. Since the second power semiconductor 4 'alone has to provide only a smaller power, it can also be optimized for this smaller power. This significantly reduces the power loss of the electronic ballast.
  • the power of the second power semiconductor 4 ' is additionally lower than the power of the first power semiconductor 4. This is possible because in static operation often only 1/3 of the power required for the starting process must be provided. This is in the FIGS. 2a , and 2 B characterized schematically in that the second power semiconductor 4 'is shown smaller is, as the first power semiconductor 4. This results in even more power savings.
  • FIG. 3 is the partial view of a circuit diagram of a second embodiment of the inventive EVG's shown. This is different from the one in FIG. 2a and 2 B shown embodiment in that the switch 10 is integrated in the driver 2.
  • This can be realized, for example, by a control unit 12, which either makes both lines 14 and 14 'accessible, so that the first and the second power semiconductors 4, 4' can provide power, or block the line 14, so that the power semiconductor 4 is deactivated is.
  • an electronic ballast in particular for the operation of gas discharge lamps, in which to the conventionally existing power semiconductor, a further power semiconductor is present, which provides the necessary power for static operation.

Landscapes

  • Circuit Arrangements For Discharge Lamps (AREA)
  • Dc-Dc Converters (AREA)

Abstract

L'invention concerne un ballast électronique, notamment pour la commande de lampes à décharge, qui présente en plus des semiconducteurs de puissance traditionnellement présents un semiconducteur de puissance supplémentaire qui délivre la puissance nécessaire à un fonctionnement statique, ce qui permet d'éviter que les transistors MOSFET de puissance, qui présentent des pertes de puissance élevées, soient également utilisés pour le fonctionnement statique.

Claims (8)

  1. Ballast électronique (EVG) doté d'un premier transistor (4), en particulier d'un transistor à effet de champ du type MOS, dont la puissance est dimensionnée pour une puissance de démarrage, le ballast électronique comprenant au moins un second transistor (4') et le premier et le second transistors (4, 4') étant disposés en parallèle, caractérisé en ce que le second transistor (4') présente une autre puissance que le premier transistor (4).
  2. Ballast électronique selon la revendication 1, le second transistor (4') présentant une puissance inférieure au premier transistor (4).
  3. Ballast électronique selon l'une quelconque des revendications précédentes, une unité de commande (12), qui actionne le premier et le second transistors (4, 4'), étant également prévue.
  4. Ballast électronique selon l'une quelconque des revendications précédentes, l'unité de commande (12) actionnant le premier et le second transistors (4, 4'), de telle sorte que le premier et le second transistors (4, 4') sont branchés en parallèle pour la fourniture de la puissance de démarrage, la puissance de démarrage étant fournie par les deux transistors.
  5. Ballast électronique selon l'une quelconque des revendications précédentes, le ballast passant après l'opération de démarrage avec la puissance de démarrage dans un mode statique avec une puissance statique et la puissance pour le mode statique étant fournie par le second transistor (4').
  6. Ballast électronique selon la revendication 5, l'unité de commande (12) actionnant le premier et/ou le second transistor (4, 4'), de telle sorte que la puissance statique est fournie par le second transistor.
  7. Ballast électronique selon l'une quelconque des revendications précédentes, un élément de commutation (10), qui est conçu pour désactiver le premier transistor (4), étant également prévu.
  8. Ballast électronique selon la revendication 7, l'élément de commutation (10) pouvant être actionné au moyen d'une unité de commande.
EP07727835A 2006-04-11 2007-04-05 Pertes de puissance reduites dans les ballasts electroniques Not-in-force EP2005803B8 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006017341A DE102006017341A1 (de) 2006-04-11 2006-04-11 Reduzierte Verlustleistung in Elektronischen Vorschaltgeräten (EVGs)
PCT/EP2007/053367 WO2007116016A1 (fr) 2006-04-11 2007-04-05 Pertes de puissance réduites dans les ballasts électroniques

Publications (3)

Publication Number Publication Date
EP2005803A1 EP2005803A1 (fr) 2008-12-24
EP2005803B1 true EP2005803B1 (fr) 2011-10-12
EP2005803B8 EP2005803B8 (fr) 2012-03-21

Family

ID=38216089

Family Applications (1)

Application Number Title Priority Date Filing Date
EP07727835A Not-in-force EP2005803B8 (fr) 2006-04-11 2007-04-05 Pertes de puissance reduites dans les ballasts electroniques

Country Status (7)

Country Link
US (1) US8179052B2 (fr)
EP (1) EP2005803B8 (fr)
JP (1) JP4881429B2 (fr)
KR (1) KR20080110667A (fr)
CN (1) CN101422085A (fr)
DE (1) DE102006017341A1 (fr)
WO (1) WO2007116016A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101954893A (zh) * 2010-10-14 2011-01-26 上海中科深江电动车辆有限公司 电动汽车软启动装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4066930A (en) * 1975-04-02 1978-01-03 Electrides Corporation Energizing circuits for fluorescent lamps
GB2068656B (en) 1980-01-29 1984-01-04 Thorn Emi Ltd Lamp drive circuit
KR920006438B1 (ko) * 1985-04-22 1992-08-06 엘 에스 아이 로직 코포레이션 슬루 레이트(slew rate)가 제어되는 고속 CMOS 버퍼
US4999547A (en) * 1986-09-25 1991-03-12 Innovative Controls, Incorporated Ballast for high pressure sodium lamps having constant line and lamp wattage
JPH07272882A (ja) 1994-03-31 1995-10-20 Tabuchi Denki Kk 放電ランプ用安定化電源装置
USRE42334E1 (en) * 2000-12-21 2011-05-10 Ricoh Company, Ltd. Smoothing circuit employing charging circuit intermittently charging when input voltage is higher relatively than terminal voltage and discharging circuit intermittently releasing discharging current when terminal voltage is higher relatively than input voltage
DE10241327A1 (de) * 2002-09-04 2004-03-18 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Schaltungsanordnung zum Betrieb von Entladungslampen
US7030569B2 (en) * 2003-10-16 2006-04-18 Analog Microelectronics, Inc. Direct drive CCFL circuit with controlled start-up mode
JP3811174B2 (ja) 2005-05-02 2006-08-16 東京コイルエンジニアリング株式会社 Ｄｃ−ｄｃコンバータ

Also Published As

Publication number Publication date
JP2009533807A (ja) 2009-09-17
US20090134811A1 (en) 2009-05-28
WO2007116016A1 (fr) 2007-10-18
KR20080110667A (ko) 2008-12-18
EP2005803A1 (fr) 2008-12-24
CN101422085A (zh) 2009-04-29
US8179052B2 (en) 2012-05-15
DE102006017341A1 (de) 2007-10-18
EP2005803B8 (fr) 2012-03-21
JP4881429B2 (ja) 2012-02-22

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