EP1995744B1 - Commutateur à relais miniature - Google Patents

Commutateur à relais miniature Download PDF

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Publication number
EP1995744B1
EP1995744B1 EP08007491.7A EP08007491A EP1995744B1 EP 1995744 B1 EP1995744 B1 EP 1995744B1 EP 08007491 A EP08007491 A EP 08007491A EP 1995744 B1 EP1995744 B1 EP 1995744B1
Authority
EP
European Patent Office
Prior art keywords
switch
miniature relay
switches
protective resistor
relay switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
EP08007491.7A
Other languages
German (de)
English (en)
Other versions
EP1995744A2 (fr
EP1995744A3 (fr
Inventor
Werner Beutelspacher
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohde and Schwarz GmbH and Co KG
Original Assignee
Rohde and Schwarz GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE102007029874A external-priority patent/DE102007029874A1/de
Application filed by Rohde and Schwarz GmbH and Co KG filed Critical Rohde and Schwarz GmbH and Co KG
Publication of EP1995744A2 publication Critical patent/EP1995744A2/fr
Publication of EP1995744A3 publication Critical patent/EP1995744A3/fr
Application granted granted Critical
Publication of EP1995744B1 publication Critical patent/EP1995744B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H9/00—Details of switching devices, not covered by groups H01H1/00 - H01H7/00
    • H01H9/30—Means for extinguishing or preventing arc between current-carrying parts
    • H01H9/42—Impedances connected with contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H9/00—Details of switching devices, not covered by groups H01H1/00 - H01H7/00
    • H01H9/30—Means for extinguishing or preventing arc between current-carrying parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H9/00—Details of switching devices, not covered by groups H01H1/00 - H01H7/00
    • H01H9/30—Means for extinguishing or preventing arc between current-carrying parts
    • H01H9/40—Multiple main contacts for the purpose of dividing the current through, or potential drop along, the arc

Definitions

  • the invention relates to a miniature relay switch, in particular a so-called MEMS switch (M icro e lectro M echanical S ystem) having extremely small contact areas.
  • MEMS switch Micro e lectro M echanical S ystem
  • Miniature relay switches of this type are preferably used for broadband switching of high-frequency signals, since they have linear switching characteristics in a wide frequency range from DC or kHz to the GHz range. However, they have the problem that they are easily damaged or destroyed when switching between two different DC potentials. This effect is called hot switching. Since such switches are very low impedance already satisfy very small voltage differences of, for example, only 1 V and very low load capacities of, for example, only a few pF to produce very high pulse currents or pulse current densities at the very small contact surfaces. Therefore, such switches are extremely vulnerable, for example, in the input stages of receivers and could not be used for many possible applications for this reason.
  • Fig. 1 shows this effect using a switching example.
  • the MEMS switch A which is switched on and off via a control device S by means of electrostatic or magnetic forces, a high-frequency signal HF is to be switched through to a load L.
  • the MEMS switch A has a very small volume resistance of 300 mOhms, for example, the load L is only a small load capacity of 10 pF.
  • At the input of the switch A is in addition to the RF signal and a DC potential of, for example, 3 V, which is indicated schematically by the DC voltage source Q.
  • a DC potential of 3 V is present at one switching contact, and a DC voltage potential of 0 V at the other switching contact.
  • a compensation device in the form of one or more transistors arranged parallel to the MEMS switch, parallel to the contacts of the MEMS switch ( US 2007/0009202 ). These transistors of the equalizer are controlled together with the MEMS switch so that initially only the transistors are turned on and so can be done on the channel resistance equipotential bonding and only after the potential equalization of the MEMS switch is closed. It is already known to arrange resistances in series with these transistors for RF decoupling. This known parallel circuit solution has the disadvantage that it greatly reduces the compensated cutoff frequency of the MEMS switch.
  • the compensated cutoff frequency is much less limited than in the known parallel circuit solution and a miniature relay switch according to the invention therefore has a much higher cutoff frequency and can be used up to the highest frequencies in gigahertz.
  • the DC potential equalization is first carried out on the resistance and the switch is thereby protected from damage. Only when the DC potential equalization is reached, the protective resistor is switched off again via the additional switch and the high frequency signal is switched through the now again only effective miniature relay switch with its advantageous high-frequency switching properties.
  • the small switching time loss to the DC potential equalization which may be on the order of microseconds, compared to the great advantage that for the first time even such MEMS switches can be used as a high-frequency switch without the risk of damage or destruction, negligible.
  • Fig. 2 shows a MEMS switch A, which is switched on and off by a control device S.
  • a protective resistor W is connected, which can be bridged via an additional switch B which can also be actuated by means of the switching device S.
  • the switch A is first controlled by the control device S, the switch B remains open.
  • the equipotential current between the DC voltage source Q and the load capacitance is limited by the resistance W for the switch A to an allowable level and thus protected.
  • the value of the resistor W is chosen so large that the maximum current density specified by the manufacturer at the switching contacts of the MEMS switch A is not exceeded. In practice, this is achieved with a resistance of a few kohms, for example 10 kohms.
  • the resistor W is preferably a purely ohmic resistor.
  • the switch A can be closed immediately without danger. Only after the DC voltage equalization at the contacts of the switch A, this resistance W is bridged by the second additional switch B.
  • the controlled via the controller S switch B is preferably constructed in the same technology as the switch A, so for example also a MEMS switch. Since the high-frequency signal is switched through to the load via both switches A and B after completion of the equipotential bonding, high demands must be made with respect to the transmission characteristics at these two switches.
  • the control of the switches A and B could also take place via a measuring device measuring the potential difference.
  • a high-impedance voltage measuring device is provided in the control device S, for example a voltage comparator circuit which detects the DC voltage difference between the switching points 1 and 2 of the switch A. If the potential difference between these switching points 1 and 2 reaches a predetermined minimum value, that is, sufficient equipotential bonding is achieved, the switch B is controlled by this measuring device of the control device S closed.

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Micromachines (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Relay Circuits (AREA)

Claims (5)

  1. Commutateur à relais miniature, en particulier un commutateur MEMS, comportant un dispositif de compensation pour compenser le potentiel de tension continue aux contacts du commutateur, dans lequel le dispositif de compensation présente une résistance de protection (W) disposée en série par rapport au commutateur (A), qui peut être pontée grâce à un commutateur supplémentaire (B), et un dispositif de commande (S), qui est réalisé de telle sorte que les deux commutateurs (A, B) sont commandés de sorte que la résistance de protection (W) est connectée en série par rapport au commutateur (A) jusqu'à la compensation du potentiel de tension continue au commutateur fermé (A) dans le cas du commutateur supplémentaire d'abord ouvert (B) et, seulement après la compensation de potentiel, la résistance de protection (W) est pontée par le commutateur supplémentaire (B),
    caractérisé en ce que
    le dispositif de compensation, y compris la résistance de protection (W) et le commutateur supplémentaire (B) et le dispositif de commande (S), est intégré dans le commutateur à relais miniature.
  2. Commutateur à relais miniature selon la revendication 1, caractérisé en ce que
    le commutateur supplémentaire (B) est de la même technologie que le commutateur (A), les deux commutateurs étant en particulier des commutateurs MEMS.
  3. Commutateur à relais miniature selon l'une des revendications précédentes, caractérisé en ce que
    la séquence de commutation des deux commutateurs (A, B) est contrôlée dans le temps.
  4. Commutateur à relais miniature selon l'une des revendications précédentes, caractérisé en ce
    qu'un dispositif de mesure du potentiel de tension continue est associé au contact à fermeture (A) et la séquence de commutation des deux commutateurs (A, B) est commandée conformément à la différence de potentiel mesurée au commutateur (A).
  5. Commutateur à relais miniature selon l'une des revendications précédentes, caractérisé en ce que
    la résistance de protection (W) est choisie si grande que la densité de courant admissible maximale du commutateur (A) et/ou du commutateur (B) ne sera pas dépassée.
EP08007491.7A 2007-05-25 2008-04-16 Commutateur à relais miniature Expired - Fee Related EP1995744B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007024458 2007-05-25
DE102007029874A DE102007029874A1 (de) 2007-05-25 2007-06-28 Miniaturrelais-Schalter

Publications (3)

Publication Number Publication Date
EP1995744A2 EP1995744A2 (fr) 2008-11-26
EP1995744A3 EP1995744A3 (fr) 2009-09-30
EP1995744B1 true EP1995744B1 (fr) 2014-03-19

Family

ID=39688538

Family Applications (1)

Application Number Title Priority Date Filing Date
EP08007491.7A Expired - Fee Related EP1995744B1 (fr) 2007-05-25 2008-04-16 Commutateur à relais miniature

Country Status (1)

Country Link
EP (1) EP1995744B1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016215001A1 (de) * 2016-08-11 2018-02-15 Siemens Aktiengesellschaft Schaltzelle mit Halbleiterschaltelement und mikroelektromechanischem Schaltelement

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10211902B1 (en) * 2017-10-13 2019-02-19 General Electric Company True time delay beam former and method of operation

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10029853A1 (de) * 2000-06-16 2002-01-03 Helbako Elektronik Baugruppen Schaltungsanordnung zur Reduzierung des Kontaktstromes
US20020089804A1 (en) * 2000-09-28 2002-07-11 Chea Ramon C.W. Circuit topology for protecting vulnerable micro electro-mechanical system (MEMS) and electronic relay devices

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5864458A (en) * 1995-09-14 1999-01-26 Raychem Corporation Overcurrent protection circuits comprising combinations of PTC devices and switches
US5943223A (en) * 1997-10-15 1999-08-24 Reliance Electric Industrial Company Electric switches for reducing on-state power loss
DE19927762A1 (de) * 1999-06-17 2001-01-04 Abb Research Ltd Neue elektrische Schalteinrichtung zum Überstromschutz
TW539934B (en) * 2001-12-06 2003-07-01 Delta Electronics Inc Inrush current suppression circuit
DE10340619B4 (de) 2003-09-03 2011-06-01 Rohde & Schwarz Gmbh & Co. Kg Eichleitung
US7504841B2 (en) * 2005-05-17 2009-03-17 Analog Devices, Inc. High-impedance attenuator
EP1908088B1 (fr) 2005-07-08 2012-09-05 Analog Devices, Inc. Protection d'un dispositif de commutation a systeme mems
US7276991B2 (en) * 2005-09-09 2007-10-02 Innovative Micro Technology Multiple switch MEMS structure and method of manufacture
JP2007103312A (ja) * 2005-10-07 2007-04-19 Fujitsu Media Device Kk スイッチ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10029853A1 (de) * 2000-06-16 2002-01-03 Helbako Elektronik Baugruppen Schaltungsanordnung zur Reduzierung des Kontaktstromes
US20020089804A1 (en) * 2000-09-28 2002-07-11 Chea Ramon C.W. Circuit topology for protecting vulnerable micro electro-mechanical system (MEMS) and electronic relay devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016215001A1 (de) * 2016-08-11 2018-02-15 Siemens Aktiengesellschaft Schaltzelle mit Halbleiterschaltelement und mikroelektromechanischem Schaltelement
US10763066B2 (en) 2016-08-11 2020-09-01 Siemens Aktiengesellschaft Switch cell having a semiconductor switch element and micro-electromechanical switch element

Also Published As

Publication number Publication date
EP1995744A2 (fr) 2008-11-26
EP1995744A3 (fr) 2009-09-30

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