EP1995744A2 - Commutateur à relais miniature - Google Patents

Commutateur à relais miniature Download PDF

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Publication number
EP1995744A2
EP1995744A2 EP08007491A EP08007491A EP1995744A2 EP 1995744 A2 EP1995744 A2 EP 1995744A2 EP 08007491 A EP08007491 A EP 08007491A EP 08007491 A EP08007491 A EP 08007491A EP 1995744 A2 EP1995744 A2 EP 1995744A2
Authority
EP
European Patent Office
Prior art keywords
switch
miniature relay
additional
switches
protective resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP08007491A
Other languages
German (de)
English (en)
Other versions
EP1995744B1 (fr
EP1995744A3 (fr
Inventor
Werner Beutelspacher
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohde and Schwarz GmbH and Co KG
Original Assignee
Rohde and Schwarz GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE102007029874A external-priority patent/DE102007029874A1/de
Application filed by Rohde and Schwarz GmbH and Co KG filed Critical Rohde and Schwarz GmbH and Co KG
Publication of EP1995744A2 publication Critical patent/EP1995744A2/fr
Publication of EP1995744A3 publication Critical patent/EP1995744A3/fr
Application granted granted Critical
Publication of EP1995744B1 publication Critical patent/EP1995744B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H9/00—Details of switching devices, not covered by groups H01H1/00 - H01H7/00
    • H01H9/30—Means for extinguishing or preventing arc between current-carrying parts
    • H01H9/42—Impedances connected with contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H9/00—Details of switching devices, not covered by groups H01H1/00 - H01H7/00
    • H01H9/30—Means for extinguishing or preventing arc between current-carrying parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H9/00—Details of switching devices, not covered by groups H01H1/00 - H01H7/00
    • H01H9/30—Means for extinguishing or preventing arc between current-carrying parts
    • H01H9/40—Multiple main contacts for the purpose of dividing the current through, or potential drop along, the arc

Definitions

  • the invention relates to a miniature relay switch, in particular a so-called MEMS switch (M icro e lectro M echanical S ystem) having extremely small contact areas.
  • MEMS switch Micro e lectro M echanical S ystem
  • Miniature relay switches of this type are preferably used for broadband switching of high-frequency signals, since they have linear switching characteristics in a wide frequency range from DC or kHz to the GHz range. However, they have the problem that they are easily damaged or destroyed when switching between two different DC potentials. This effect is called hot switching. Since such switches are very low impedance already satisfy very small voltage differences of, for example, only 1 V and very low load capacity of, for example, only a few pF to produce very high pulse currents or pulse current densities at the very small contact surfaces. Therefore, such switches are extremely vulnerable, for example, in the input stages of receivers and could not be used for many possible applications for this reason.
  • Fig. 1 shows this effect using a switching example.
  • the MEMS switch A which is switched on and off via a control device S by means of electrostatic or magnetic forces, a high-frequency signal HF is to be switched through to a load L.
  • the MEMS switch A has a very small volume resistance of 300 mOhms, for example, the load L is only a small load capacity of 10 pF.
  • At the input of the switch A is in addition to the RF signal and a DC potential of, for example, 3 V, which is indicated schematically by the DC voltage source Q.
  • a DC potential of 3 V is present at one switching contact, and a DC voltage potential of 0 V at the other switching contact.
  • the protective resistor according to the invention which is connected in series with the switch when the switch is closed, or which is connected in parallel with the switch before the switch is closed, the DC potential equalization initially takes place via this protective resistor and the switch is thereby protected from damage. Only when the DC potential equalization is achieved, the protective resistor is switched off again via the additional switch and the high frequency signal is switched through the now again only effective miniature relay switch with its advantageous high-frequency switching properties.
  • the low switching time loss to DC potential equalization which may be on the order of microseconds, is compared with the great advantage that for the first time even such MEMS switches can be used as a high frequency switch without the risk of damage or destruction, negligible.
  • Fig. 2 shows a MEMS switch A, which is switched on and off by a control device S.
  • a protective resistor W is connected, which can be bridged via an additional switch B which can also be actuated by means of the switching device S.
  • the switch A is first controlled by the control device S, the switch B remains open.
  • the equipotential current between the DC voltage source Q and the load capacitance is limited by the resistance W for the switch A to an allowable level and thus protected.
  • the value of the resistor W is chosen so large that the maximum current density specified by the manufacturer at the switching contacts of the MEMS switch A is not exceeded. In practice this is done with a resistance of a few kOhms, for example 10 kOhm.
  • the resistor W is preferably a purely ohmic resistor.
  • the switch A can be closed immediately without danger. Only after the DC potential equalization at the contacts of the switch A, this resistor W is bridged by the second additional switch B.
  • the controlled via the controller S switch B is preferably constructed in the same technology as the switch A, so for example also a MEMS switch. Since the high-frequency signal is switched through to the load via both switches A and B after completion of the equipotential bonding, high demands must be made with respect to the transmission characteristics at these two switches.
  • the control of the two switches A and B can be done via the control device S either time-dependent or controlled by a measuring device, as in connection with the embodiment of FIG Fig. 3 will be described in more detail.
  • Fig. 3 again shows a MEMS switch A controlled via a control device S for switching an RF signal HF to a load L.
  • Fig. 3 the possibility of controlling the switch via a voltage measuring device.
  • the switch A is a DC potential difference Q.
  • the switch B can then be opened again. After the short switching time of only a few microseconds for the purpose of equipotential bonding, the high-frequency signal is switched through exclusively via the switch A to the load. Therefore, the requirements of the additional switch B lower requirements for transmission characteristics than in the series connection after Fig. 2 , The additional switch B can therefore also be realized in a completely different technology, for example as a field effect transistor switch or as a simple mechanical relay switch.
  • the dimensioning of the resistor W in the embodiment according to Fig. 3 depends on the maximum permissible current density at the contact of switch B.
  • the controller according to the embodiment Fig. 3 can again be time-dependent or controlled via a measuring device.

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Micromachines (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Relay Circuits (AREA)
EP08007491.7A 2007-05-25 2008-04-16 Commutateur à relais miniature Expired - Fee Related EP1995744B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007024458 2007-05-25
DE102007029874A DE102007029874A1 (de) 2007-05-25 2007-06-28 Miniaturrelais-Schalter

Publications (3)

Publication Number Publication Date
EP1995744A2 true EP1995744A2 (fr) 2008-11-26
EP1995744A3 EP1995744A3 (fr) 2009-09-30
EP1995744B1 EP1995744B1 (fr) 2014-03-19

Family

ID=39688538

Family Applications (1)

Application Number Title Priority Date Filing Date
EP08007491.7A Expired - Fee Related EP1995744B1 (fr) 2007-05-25 2008-04-16 Commutateur à relais miniature

Country Status (1)

Country Link
EP (1) EP1995744B1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200057091A (ko) * 2017-10-13 2020-05-25 제네럴 일렉트릭 컴퍼니 실시간 지연 빔 형성기와 그것의 동작 방법

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016215001A1 (de) 2016-08-11 2018-02-15 Siemens Aktiengesellschaft Schaltzelle mit Halbleiterschaltelement und mikroelektromechanischem Schaltelement

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10340619A1 (de) 2003-09-03 2005-04-28 Rohde & Schwarz Eichleitung
US20070009202A1 (en) 2005-07-08 2007-01-11 Cammen Chan MEMS switching device protection

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5864458A (en) * 1995-09-14 1999-01-26 Raychem Corporation Overcurrent protection circuits comprising combinations of PTC devices and switches
US5943223A (en) * 1997-10-15 1999-08-24 Reliance Electric Industrial Company Electric switches for reducing on-state power loss
DE19927762A1 (de) * 1999-06-17 2001-01-04 Abb Research Ltd Neue elektrische Schalteinrichtung zum Überstromschutz
DE10029853A1 (de) * 2000-06-16 2002-01-03 Helbako Elektronik Baugruppen Schaltungsanordnung zur Reduzierung des Kontaktstromes
US6683768B2 (en) * 2000-09-28 2004-01-27 Turnstone Systems, Inc. Circuit topology for protecting vulnerable micro electro-mechanical system (MEMS) and electronic relay devices
TW539934B (en) * 2001-12-06 2003-07-01 Delta Electronics Inc Inrush current suppression circuit
US7504841B2 (en) * 2005-05-17 2009-03-17 Analog Devices, Inc. High-impedance attenuator
US7276991B2 (en) * 2005-09-09 2007-10-02 Innovative Micro Technology Multiple switch MEMS structure and method of manufacture
JP2007103312A (ja) * 2005-10-07 2007-04-19 Fujitsu Media Device Kk スイッチ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10340619A1 (de) 2003-09-03 2005-04-28 Rohde & Schwarz Eichleitung
US20070009202A1 (en) 2005-07-08 2007-01-11 Cammen Chan MEMS switching device protection

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200057091A (ko) * 2017-10-13 2020-05-25 제네럴 일렉트릭 컴퍼니 실시간 지연 빔 형성기와 그것의 동작 방법

Also Published As

Publication number Publication date
EP1995744B1 (fr) 2014-03-19
EP1995744A3 (fr) 2009-09-30

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