EP1949040A1 - Detecteur, module de detecteur et procede de fabrication d'un detecteur - Google Patents

Detecteur, module de detecteur et procede de fabrication d'un detecteur

Info

Publication number
EP1949040A1
EP1949040A1 EP06807779A EP06807779A EP1949040A1 EP 1949040 A1 EP1949040 A1 EP 1949040A1 EP 06807779 A EP06807779 A EP 06807779A EP 06807779 A EP06807779 A EP 06807779A EP 1949040 A1 EP1949040 A1 EP 1949040A1
Authority
EP
European Patent Office
Prior art keywords
sensor
gel
sensor element
housing
carrier element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP06807779A
Other languages
German (de)
English (en)
Inventor
Dirk Ullmann
Harald Emmerich
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of EP1949040A1 publication Critical patent/EP1949040A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D11/00—Component parts of measuring arrangements not specially adapted for a specific variable
    • G01D11/24—Housings ; Casings for instruments
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D11/00—Component parts of measuring arrangements not specially adapted for a specific variable
    • G01D11/24—Housings ; Casings for instruments
    • G01D11/245—Housings for sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D11/00—Component parts of measuring arrangements not specially adapted for a specific variable
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49826—Assembling or joining

Definitions

  • Rotation rate sensors and acceleration sensors too.
  • sensors can be used, for example, to provide control and control functions to ensure the stability of an automobile, as e.g. Electronic Stability Programs (ESP) are widely used.
  • ESP Electronic Stability Programs
  • reliable sensor data must be available to them in order to be able to evaluate a current operating state of a motor vehicle and to be able to initiate appropriate control and control measures accordingly.
  • acceleration sensors are used which trigger an airbag when a specific deceleration is detected.
  • yaw rate sensors which determine cornering speeds of a motor vehicle and correspondingly coordinated braking action on the individual Initiate wheels if a critical situation is detected by the electronic stability program.
  • sensors are used which are manufactured as micromechanical components.
  • An example of an acceleration sensor is described in DE 10104868. There is also given a corresponding manufacturing method for such a component.
  • Cost-effective plastic enclosures such as Plastic Leaded Chip Carrier (PLCC), Small Outline IC (SOIC), Small Outline (QFN), and Small Outline (SO) have disadvantages in sensor applications.
  • PLCC Plastic Leaded Chip Carrier
  • SOIC Small Outline IC
  • QFN Small Outline
  • SO Small Outline
  • offset-stable sensors when plastic packaging is used, can not be subject to high drift stability requirements. This applies in particular with regard to the temperature and also the service life of the sensor element. Instead, very expensive housings, e.g. ceramic housings are used, which in turn make the end product more expensive. Consequently, there is a great need for cost-effectively manufacturable sensor elements, in particular micromechanical sensor elements, which have a high long-term stability, virtually no offset and offer a high measurement accuracy for absolute measurements over their entire life.
  • the object underlying the invention is to provide a sensor, a sensor component and a method for producing a sensor, which can be realized with conventional, technically simple housings, and do not have the disadvantages of the known prior art.
  • This object is achieved by a sensor component according to the features of patent claim 1, by a method for producing a sensor according to the features of patent claim 10 and a sensor according to the features of patent claim 15.
  • the sensor element and the associated carrier element preferably present in the form of an associated evaluation electronics in the form of an application-specific semiconductor element, are arranged particularly advantageously above one another and connected to one another via a short connection.
  • the connection paths between the active devices are short and capacitive influences which adversely affect the evaluation of the sensor information and which are caused via the connecting wires are reduced.
  • an elastic buffer element in particular an adhesive pad, is arranged, which secures the sensor element and at the same time decouples it from mechanical environmental influences because of its elastic properties.
  • the first connection is executed according to a development of the structure according to the invention in a flip-chip manner.
  • bonding wires are used only for the electrical connection of the sensor component to the outside, thereby complicated production steps are reduced to a minimum.
  • a partial region of the sensor element is advantageously contacted by a gel which compensates for thermal and mechanical influences in the region of the sensitive sensor element.
  • a gel which compensates for thermal and mechanical influences in the region of the sensitive sensor element.
  • the gel also contacts the plastic housing, since this optimally compensates for thermal and mechanical stresses
  • the gel also contacts the carrier element, since an even better approximation of the conditions in the interior of the housing takes place with respect to the components present there and the compensation of thermal and mechanical stresses is made even more optimal.
  • a flip-chip connection is performed as a ball grid array, since ball grid arrays have proven themselves in practice and produce a good connection between the components.
  • conductive adhesive is used for contacting between the sensor element and the evaluating carrier element, wherein advantageously this conductive adhesive may also be an anisotropically conductive adhesive.
  • the sensor element is soldered to the carrier element via reflow soldering, since no long-term influences occur in this way in the region of the connection between the chip elements.
  • the sensor element is particularly advantageously designed as a micromechanical sensor element, because such sensor elements can be accurately measured and produced inexpensively in large quantities.
  • the carrier element is particularly advantageously designed as an application-specific semiconductor element for processing sensor information of the first sensor element, since in this way both components of the sensor can be optimally matched to each other and the particular needs of the respective components with respect to mechanical , thermal and electrical long-term stability is particularly taken into account.
  • a highly accurate, long-term stable structure which consists of a sensor element and a carrier element, preferably present in the form of an evaluating semiconductor element, wherein advantageously only the evaluating semiconductor element Bonding wires with connection pins of the chip housing is connected to the outside, but nevertheless a cost-effective and technically simple plastic housing can be used.
  • a carrier element preferably present in the form of an evaluating semiconductor element
  • Bonding wires with connection pins of the chip housing is connected to the outside, but nevertheless a cost-effective and technically simple plastic housing can be used.
  • the resulting communication paths between the sensitive sensor Element and the associated evaluating semiconductor element are as short as possible, so that the sensor information is not distorted and a high long-term stability of the arrangement is ensured.
  • a portion of the structure in the interior of the plastic housing surrounded by a gel because gels provide thermal and mechanical compensation and evenly distribute the mechanical stresses, so that a high long-term stability of the sensor parameters can be ensured because External influences that could cause a drift are better shielded.
  • the highly sensitive sensor element can be contacted by the gel, the sensor element and the region of the bonding wires, or the entire surrounding region of the sensor element, the semiconductor element and the bonding wires be surrounded by the gel.
  • the amount of gel inside the housing and that of the devices it contacts there increases, an improved match to the existing environmental conditions is achieved and stresses are more evenly distributed and dissipated.
  • a flip-chip connection z. B. used in the form of a ball grid array, because these secure contact and also the Passing sensitive sensor signals between the sensor element and the evaluating carrier element allows without jeopardizing the long-term stability of the compound.
  • a sensor which is produced by a manufacturing method according to the invention, because the manufacturing method according to the invention ensures that a sensor is constructed, which has a high long-term stability, uses a low-cost housing and provides accurate measurement results over its entire life.
  • the senor is designed as an inertial or inertial sensor, since there is a high demand in this market segment and these can be used well as cost-effective sensors in the automotive sector.
  • Fig. 1 shows a plan view of a sensor arrangement according to the prior art.
  • Fig. 2 shows a side view according to a sensor arrangement according to the prior art.
  • FIG. 3 shows a schematic diagram of a sensor component according to an exemplary embodiment of the invention.
  • Fig. 4 shows an embodiment of a sensor device according to the invention.
  • Fig. 5 shows another embodiment of a sensor device according to the invention.
  • FIG. 6 shows a further exemplary embodiment of a sensor component according to the invention.
  • FIGS. 1 and 2 show, a sensor element and a semiconductor element, which serves to evaluate the information of the data measured by the sensor, are arranged next to one another in a common housing 14.
  • the semiconductor element in the form of an evaluation electronics 11 is connected to the sensor element 10 via one or more bonding wires 12.
  • a low g-region acceleration sensor is shown, in which a semiconductor component which is custom-designed is used to process the sensor information and the sensor element has been designed using surface micromechanics.
  • the sensor element 10 here carries out its measurements by means of capacitive evaluation.
  • the connection of the sensor element 10 and the evaluation electronics 11, which is produced electrically via bonding wires 12 represents a disadvantage because the bonding wires generate additional parasitic capacitances and thus can have a direct influence on the behavior of the sensor.
  • FIG. 3 shows an exemplary embodiment of a sensor component according to the invention, wherein the sensor element, which is embodied as a micromechanical sensor element, for example with comb structures, is arranged vertically above the one carrier element.
  • the carrier element is preferably formed by evaluation electronics in the form of an application-specific semiconductor element 11.
  • the sensor element 10 and the carrier element 11 are connected to one another via an adhesive 13.
  • Adhesive in the form of an elastic cushion constructed, which decouples the sensitive sensor element 10 against mechanical stress by its elastic properties.
  • FIG. 3 clearly shows a flip-chip connection 19 between the sensor element 10 and the carrier element 11, via which the electrical connection between the two components is produced.
  • the cushion can be designed in this embodiment such that mechanical stresses can be compensated via the cushion, which can occur, for example, by different expansion coefficients of the sensor element 10 and the support member 11 under thermal stress.
  • ball grid arrays may be found to be reliable, soldered either via reflow soldering, or bonded through adhesive with special properties.
  • the bonding adhesive may be anisotropically conductive, or it may contract during cure, such that the ball of the ball grid array is pulled onto the corresponding opposite contact surface for safe contact making.
  • bumps which may for example comprise aluminum or gold wire, these are applied in the wire bonding process and then torn off directly at the bonding site.
  • Adhesive is applied to the substrate, in this case the evaluation electronics IC, and the chip is bonded via the adhesive. In this case, it is equally important to ensure a secure connection by shrinking during drying. the adhesive is used so that the bumps are pulled onto the contact surfaces of the semiconductor element.
  • bonding wires 12 are present, which connect the carrier element preferably present as a semiconductor element 18 with external contacts on the chip housing 15.
  • the sensitive sensor element 17 is arranged vertically above an evaluation electronics arranged on the carrier element and is electrically connected thereto. It is also clearly visible in a dome-like recess of the plastic housing 15, a gel region 16, which is in the case of this embodiment, only on the sensor element, wherein the gel provides for a thermal and mechanical compensation, so that thermal and mechanical stresses passed directly to the plastic housing 15 become.
  • FIG. 5 shows a further exemplary sensor component according to the invention, identical or identically acting components as in FIG. 4 being designated by the same reference numerals.
  • a larger gel area 16 is formed, wherein a dome-like recess in the plastic housing which accommodates the gel now encloses both the sensor element 17 and the surface of the carrier element 18 completely or partially covered, so that thermal stresses between these components on the gel 16 can be compensated as mechanical stresses that are passed in conjunction with the housing 15, the sensor element 17, and the evaluation circuit 18 optimally.
  • a gel may serve, for example, a silicone gel.
  • It can be used because it has excellent flowability and is able to fill in fine spaces while having excellent viscosity adhesion, sealing properties and resistance to liquid, and combines with high impact resistance. Being soft, it can be deformed by applying low pressure or light weight. Due to the low elasticity, a stress generated by thermal expansion is reduced.
  • Fig. 6 shows a further embodiment of a sensor device according to the invention. Also in Fig. 6, like-named components perform the same function as in the preceding figures.
  • the embodiment there has a very large gel area 16 in comparison with FIGS. 4 and 5, in contrast to which the area occupied by the plastic housing 15 is very small.
  • Characteristic of this embodiment is that both the evaluating application-specific circuit on the support element 18, and the sensitive sensor element 17 are now surrounded by the gel, so that an optimal temperature compensation can take place and mechanical stresses from outside via the housing to the sensor structure which can be compensated, balanced and passed on through the gel.
  • a long-term stable sensor is obtained, which combines a high measurement accuracy with a technically simple design and high long-term stability det, wherein the absolute values supplied by the sensor, for example acceleration values, are stable over the entire service life.
  • the senor according to the invention has the advantages that it is insensitive to influences by plastic, gel, or mechanical stress in the field of bonding wires in the signal path, which can be noticeable in the form of a modified dielectric constant, another bonding wire distance, or a moisture integrity , or by very sensitive exposed bonding wires that can be mechanically separated.
  • This is advantageous because an electrical connection according to the flip-chip technology is used in the region between the connection of the sensor to the evaluating semiconductor element.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Pressure Sensors (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Investigating Or Analyzing Materials Using Thermal Means (AREA)

Abstract

L'invention concerne un détecteur, un module de détecteur et un procédé de fabrication d'un détecteur dans lequel en particulier des détecteurs de mesure de valeurs absolues placés dans des boîtiers de structure habituelle en matière synthétique, économique et techniquement simple, peuvent être insérés sans compromettre la stabilité à long terme des valeurs de mesure absolues délivrées par ces détecteurs. En particulier, les dérives de paramètre et les décalages des paramètres qui résultent de l'agencement d'un élément de détecteur sont compensés par un élément semi-conducteur, spécifique à l'application, qui évalue des signaux et qui est relié à ces éléments de détecteur par une liaison par puce en relief. Les sollicitations mécaniques, thermiques et les effets de l'humidité sont empêchés et compensés en plaçant une quantité appropriée de gel dans le boîtier en matière synthétique.
EP06807779A 2005-11-10 2006-11-08 Detecteur, module de detecteur et procede de fabrication d'un detecteur Withdrawn EP1949040A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005053682A DE102005053682A1 (de) 2005-11-10 2005-11-10 Sensor, Sensorbauelement und Verfahren zur Herstellung eines Sensors
PCT/EP2006/068239 WO2007054519A1 (fr) 2005-11-10 2006-11-08 Detecteur, module de detecteur et procede de fabrication d'un detecteur

Publications (1)

Publication Number Publication Date
EP1949040A1 true EP1949040A1 (fr) 2008-07-30

Family

ID=37669617

Family Applications (1)

Application Number Title Priority Date Filing Date
EP06807779A Withdrawn EP1949040A1 (fr) 2005-11-10 2006-11-08 Detecteur, module de detecteur et procede de fabrication d'un detecteur

Country Status (7)

Country Link
US (1) US20090193891A1 (fr)
EP (1) EP1949040A1 (fr)
JP (1) JP2009516159A (fr)
KR (1) KR20080075108A (fr)
CN (1) CN101305266A (fr)
DE (1) DE102005053682A1 (fr)
WO (1) WO2007054519A1 (fr)

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Also Published As

Publication number Publication date
CN101305266A (zh) 2008-11-12
US20090193891A1 (en) 2009-08-06
WO2007054519A1 (fr) 2007-05-18
DE102005053682A1 (de) 2007-05-16
JP2009516159A (ja) 2009-04-16
KR20080075108A (ko) 2008-08-14

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