EP1925033A1 - Electronic circuit and method for the manufacture of the same - Google Patents
Electronic circuit and method for the manufacture of the sameInfo
- Publication number
- EP1925033A1 EP1925033A1 EP06792048A EP06792048A EP1925033A1 EP 1925033 A1 EP1925033 A1 EP 1925033A1 EP 06792048 A EP06792048 A EP 06792048A EP 06792048 A EP06792048 A EP 06792048A EP 1925033 A1 EP1925033 A1 EP 1925033A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- substrate
- strip
- shaped
- electronic circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000010410 layer Substances 0.000 claims abstract description 184
- 239000002346 layers by function Substances 0.000 claims abstract description 140
- 239000000758 substrate Substances 0.000 claims abstract description 139
- 239000000463 material Substances 0.000 claims abstract description 50
- 238000007639 printing Methods 0.000 claims description 27
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 230000005669 field effect Effects 0.000 claims description 10
- 238000010924 continuous production Methods 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 7
- 239000003990 capacitor Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 2
- 238000004049 embossing Methods 0.000 claims description 2
- 238000000227 grinding Methods 0.000 claims description 2
- 238000006748 scratching Methods 0.000 claims description 2
- 230000002393 scratching effect Effects 0.000 claims description 2
- 238000007650 screen-printing Methods 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 238000013532 laser treatment Methods 0.000 description 5
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 229920000123 polythiophene Polymers 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000010076 replication Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 229920006255 plastic film Polymers 0.000 description 2
- 229920000767 polyaniline Polymers 0.000 description 2
- -1 polyethylene Polymers 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
Definitions
- the invention relates to an electronic circuit comprising at least two electronic components on a common flexible substrate, wherein the at least two electronic components each have at least one electrical functional layer of identical functional layer material.
- the invention further relates to a method for producing an electronic circuit comprising at least two electronic components on a common flexible substrate, wherein the at least two electronic components are each formed with at least one electrical functional layer of identical functional layer material.
- WO 2004/032257 A2 discloses a method for producing a film, wherein the film comprises at least one component in organic semiconductor technology, in particular one or more field-effect transistors.
- the structuring of one or more layers of the device takes place by thermal replication or UV replication.
- a layer applied over a large area, to be replicated is partially completely severed by the replication and a pattern-shaped electrical functional layer is formed.
- a large-area layer application of the layer to be replicated is not necessary for reasons of space always possible and continues to lead to increased material consumption.
- a speed of the substrate in the printing direction during printing of at least 0.5 m / min, preferably in the range of 5 to 200 m / min, is selected.
- the individual electrical functional layers from which the electronic component is constructed must be formed one after the other and positioned one above the other in the correct position and arrangement according to a predetermined layout.
- Characteristics and short response times of a device required to minimize the layer thicknesses of electrical functional layers.
- the use of increasingly low-viscosity printing media is required.
- the object is achieved for the electronic circuit comprising at least two electronic components on a common flexible substrate, wherein the at least two electronic components each have at least one electrical functional layer of identical functional layer material, achieved in that the electrical functional layers of identical functional layer material are formed from layer regions of a strip-shaped layer formed on the substrate.
- the object is for the method for producing an electronic circuit comprising at least two electronic components on a common flexible substrate, wherein the at least two electronic components are each formed with at least one electrical functional layer of identical functional layer material, achieved in that at least one strip-shaped layer on the Substrate is formed and that the electrical functional layers are formed of identical functional layer material of layer regions of a single strip-shaped layer.
- a stripe-shaped application of functional layer material on a substrate enables a space-saving and uniformly thick layer application with clean contours.
- Such a prepared substrate which is provided with at least one strip-shaped layer of functional layer material, is versatile and individually adaptable to the respective desired electronic circuit.
- the layer formed in strip form on the substrate is formed in a predetermined application direction in a continuous process on the substrate.
- the layer formed on the substrate in the form of a strip is preferably a printed layer or a layer formed by application of a liquid medium to the substrate.
- a printing process is used as the continuous process, in particular a printing process from the group of gravure, high-pressure, screen printing or as another process of coating (for example, knife coating, spin coating, spraying or ink jet printing) which applies a liquid medium to the substrate to form the at least one strip-shaped layer.
- a printing tool is used which is unrolled on the substrate at least in regions.
- printing tools for example, pressure rollers or flexible rubber tools such as tampons are suitable.
- a pressure medium or liquid medium having a dynamic viscosity of less than 200 mPas, in particular less than 50 mPas, considered at a temperature of 20 ° C. is preferred.
- Such low-viscosity media allow the formation of extremely thin electrical functional layers while improving the performance of the electronic device produced therewith.
- a first electronic component of the at least two electronic components has a first electrical functional layer and a second electronic component of the at least two electronic components has a second electrical functional layer, wherein the first and the second electrical functional layer are formed of identical functional layer material, wherein the first and the second electrical functional layer are arranged on the substrate such that they are arranged one after the other in the application direction or next to one another.
- the layer formed in strip form on the substrate is a semiconductive or an electrically insulating layer, in particular an organic semiconductive or an organic electrically insulating layer. But also an electrically conductive, optionally organic electrically conductive, strip-shaped layer can be used.
- organic semiconductor material for example, polythiophene is suitable.
- organic insulating material among other things, polyvinylphenol has been proven.
- Inorganic semiconductor or insulating material can be vapor-deposited, sputtered or pastes containing semiconducting or electrically insulating inorganic particles, in particular nanoparticles, can be used.
- the substrate It is particularly advantageous to form the substrate with a plurality of strip-shaped layers arranged parallel next to one another and formed from different functional layer materials.
- the components required for the formation of the electronic circuit can be built therefrom.
- the layer formed on the substrate may be discontinuous and / or subdivided into mutually independent layer regions, at least one through opening being visible over the cross section of the strip formed in strip form on the substrate is formed strip-shaped layer formed on the substrate. It has proven useful if the strip-shaped layer formed on the substrate is subdivided in the application direction and / or perpendicular to the application direction.
- suitable methods for structuring the at least one strip-shaped layer the use of laser beam, embossing, cutting, grinding or scratching have proven successful.
- the at least one opening in the strip-shaped layer formed on the substrate is formed as a via, via which an electrical contact between electrical functional layers is formed, which is perpendicular to the substrate plane (xy plane) seen above and below the strip formed on the substrate layer are.
- a connection in the third dimension (z-plane) between functional layers is made possible.
- an opening has a width in the range of 1 ⁇ m to 10 mm, preferably of 50 ⁇ m to 2 mm.
- Such dimensions can be realized, for example, in low or high pressure using the method according to the invention with high accuracy.
- Such widths ensure sufficient electrical separation of layer areas of a strip-shaped layer and furthermore a sufficient material absorption capacity (for example for receiving printing paste) in the formation of plated-through holes via such an opening.
- At least one electronic component is designed as a transistor, in particular as a field-effect transistor.
- the at least two electronic Components are each formed as field effect transistors, wherein the field effect transistors each having a semiconducting electrical functional layer of identical functional layer material, which are formed from layer regions of a strip-shaped on the substrate formed semiconductive layer and wherein the field effect transistors each have an electrically insulating electrical functional layer of identical
- Functional layer material which are formed from layer regions of a strip-shaped on the substrate formed electrically insulating layer.
- At least one electronic component is designed as a diode.
- the at least two electronic components are each formed as diodes, wherein the diodes each have a semiconductive electrical functional layer of identical functional layer material, which are formed from layer regions of a strip-shaped on the substrate formed semiconducting layer.
- At least one electronic component is designed as an ohmic resistance.
- the at least two electronic components are each designed as ohmic resistors, wherein the resistors each have a functional layer of identical functional layer material, which are formed from layer regions of a strip-shaped layer formed on the substrate.
- At least one electronic component is designed as a capacitor.
- the at least two electronic components are each formed as capacitors, the capacitors each having an electrically insulating functional layer of identical functional layer material, which are formed from layer regions of a strip-shaped formed on the substrate electrically insulating layer.
- the flexible substrate is formed band-shaped. At least in the formation of the at least one strip-shaped layer, the substrate can be easily transported from roll to roll.
- the uncoated flexible substrate is wound onto a roll, the substrate is removed from the roll and guided, for example, through a printing press, thereby printed and finally wound up as a printed substrate onto a further roll. This allows the processing of long substrate tapes, wherein the positioning opposite the printing machine must be done only once at the beginning of a new substrate roll.
- the at least one strip-shaped layer formed on the substrate is arranged parallel to a longitudinal side of the band-shaped substrate, that is, the application direction is arranged parallel to a longitudinal side of the band-shaped substrate.
- a strip-shaped layer can be continuously formed on the substrate from the beginning of the roll to the end of the roll, thereby increasing the uniformity of the layer (in terms of layer thickness, width and surface roughness).
- the flexible substrate may be multi-layered. It is particularly preferred if an elongated plastic film, which is optionally multi-layered, is used as the flexible substrate. Suitable are here For example, plastic films made of polyester, polyethylene, polyethylene terephthalate or polyimide. It is useful if a thickness of the flexible substrate in the range of 6 .mu.m to 200 .mu.m, preferably in the range of 12 .mu.m to 50 .mu.m, is selected.
- Strip-shaped layer preferably 50 microns to 2000 microns.
- the preferred distance between two adjacent and mutually parallel strip-like layers is 2000 microns to 50,000 microns.
- the layers formed on the substrate in the form of strips at least in the substrate cross-section are arranged on the substrate in one plane and / or in different planes. As a result, three-dimensional circuits can be generated in a simple manner.
- each one of the at least two electrical functional layers of the at least two components is formed by a structuring of a, thus shared by the at least two electronic components, strip-shaped layer.
- a first electronic component of the at least two electronic components has a first electrical functional layer and wherein a second electronic component of the at least two electronic components has a second electrical functional layer, wherein the first and the second electrical functional layer are formed of identical functional layer material in which the first and the second electrical functional layer are arranged on the substrate in such a way that they are arranged successively or next to one another as seen in the application direction.
- the layer formed on the substrate in the form of a strip is formed with a layer thickness in the range from ln to 300 ⁇ m, in particular in the range from lnm to 300 nm.
- the at least two electronic components usually furthermore have electrically conductive, in particular organic or metallic, functional layers. These can be formed by means of printing, vapor deposition or sputtering (before or after the formation of strip-like layers) on the uncoated substrate or on an already coated substrate.
- electrically conductive materials in particular conductive polymers or metals or metal alloys, for example, of vapor-deposited or sputtered gold or silicon, or conductive pastes with gold, silver or conductive inorganic nanoparticles in question.
- conductive "organic” materials here all types of organic, organometallic and inorganic plastics are considered, which are referred to in English as "plastics".
- a restriction in the dogmatic sense to organic Material as carbon-containing material is therefore not provided, but it is also intended to the use of, for example, silicones.
- the term should not be subject to any restriction with regard to the molecular size, in particular to polymeric and / or oligomeric materials, but the use of "small molecules” is also possible.As the electrically conductive organic materials, polyaniline or polypyrrole have proven to be useful.
- the electronic circuit is an organic circuit.
- the electronic circuit has components which have only organic electrical functional layers and / or components which have organic and inorganic electrical functional layers.
- FIGS. 1a to 7b are intended to illustrate the invention by way of example. So shows:
- FIG. 1a shows a band-shaped substrate with four strip-shaped layers
- FIG. 1 b shows a cross section through the substrate from FIG. 1 a
- FIG. 2a shows a strip-shaped substrate with a strip-shaped layer
- FIG. 2b shows the substrate from FIG. 2a after a laser treatment
- FIG. 3 a shows a strip-shaped substrate with a strip-shaped layer
- FIG. 3b shows the substrate from FIG. 3a after a laser treatment
- 4a shows a belt-shaped substrate with a strip-shaped layer and other electrical
- FIG. 4b shows a cross section through the substrate from FIG. 4a
- FIG. 5a shows a band-shaped substrate with a subdivided, strip-shaped layer and further strip-shaped electrical functional layers
- FIG. 5b shows a longitudinal section through the substrate from FIG. 5a.
- FIG. 6a shows a band-shaped substrate with a subdivided, strip-shaped layer and a further strip-shaped layer
- FIG. 6b shows a cross section through the substrate from FIG. 6a
- Figure 7a shows a detail of an electronic circuit in plan view
- Figure 7b shows a cross section through the circuit of Figure 7a.
- FIG. 1a shows a flexible band-shaped substrate 1 made of PET with four strip-shaped layers 2a, 2b, 2c, 2d, which are arranged longitudinally on the band-shaped substrate 1 and parallel to one another.
- the four strip-shaped layers 2a, 2b, 2c, 2d are printed on the substrate 1 in the gravure printing method, the arrow indicating the direction of printing on the left in FIG. 1a.
- the four stripe-shaped layers 2a, 2b, 2c, 2d are applied parallel to the printing direction over the entire length of the substrate 1.
- the strip-shaped layer 2a is organic and electrically conductive
- the strip-shaped layer 2b is organic and semiconducting
- the strip-shaped layer 2c is again organic and electrically conductive
- the strip-shaped layer 2d is formed organic and electrically insulating.
- the strip-shaped layers 2a, 2b, 2c, 2d are now used either in unchanged form or in a structured form as electrical functional layers for constructing electronic components.
- the strip-shaped application of the functional layer material by means of a printing medium results in a particularly uniform layer thickness and contour of the later functional layers of the electronic components.
- FIG. 1 b shows the cross-section A - A 'through the substrate 1 and the four strip-shaped layers 2 a, 2 b, 2 c, 2 d from FIG. 1 a.
- FIG. 2 a shows a flexible band-shaped substrate 1 with a strip-shaped layer 2 b of organic semiconductive functional layer material, here polythiophene.
- the strip-shaped layer 2 b is printed longitudinally on the substrate 1, wherein the arrow on the left in the image
- Layer regions 3a of the strip-shaped layer 2b oriented in the longitudinal direction of the substrate 1 are characterized in which, after formation of the strip-shaped layer 2b, a cut is to take place by means of a laser in order to provide the strip-shaped layer 2b with openings 4a (see FIG. 2b).
- FIG. 2b now shows the substrate 1 and the strip-shaped layer 2b from FIG. 2a after the laser treatment, wherein the strip-shaped layer 2b has been divided into three strips which are parallel and separated from one another in the longitudinal direction of the substrate 1.
- the three strip-shaped layers 2b are now used, if appropriate after further structuring, as electrical functional layers for constructing electronic components.
- the strip-shaped application of the functional layer material by means of a printing medium results in a particularly uniform layer thickness and contour of the later functional layers of the electronic components.
- FIG. 3a likewise shows a flexible strip-shaped substrate 1 with a strip-shaped layer 2b made of organic semiconductive functional layer material, here polythiophene.
- the strip-shaped layer 2 b is printed longitudinally on the substrate 1, wherein the arrow on the left in the image Order direction designated.
- Layer regions 3b oriented in the transverse direction of the substrate 1 are marked in the strip-shaped layer 2b, in which, after formation of the strip-shaped layer 2b, a cut should be made by means of a laser in order to provide the strip-shaped layer 2b with openings 4b (see FIG. 3b).
- FIG. 3b now shows the substrate 1 and the strip-shaped layer 2b from FIG. 3a after the laser treatment, the strip-shaped layer 2b being divided into three strips which are parallel and separated from one another in the transverse direction of the substrate 1.
- the three strip-shaped layers 2b are now used, if appropriate after further structuring, as electrical functional layers for constructing electronic components.
- the strip-shaped application of the functional layer material by means of a printing medium results in a particularly uniform layer thickness and contour of the later functional layers of the electronic components.
- FIG. 4 a shows a flexible strip-shaped substrate 1 made of PET with a printed, organic semiconducting and strip-shaped layer 2 b, here of polythiophene, and further, electrically conductive functional layers 5 a, 5 b of sputtered gold.
- the functional layer 5b of gold was formed directly on the substrate 1, the strip-shaped layer 2b printed longitudinally on the strip-shaped substrate 1 and finally the functional layer 5a formed from gold.
- a unit of electrically conductive functional layers 5a, 5b and arranged therebetween Organic semiconducting layer 2b each forms a diode.
- a strip-shaped electrically insulating layer could optionally be arranged between the organic semiconductive layer 2 b and the electrically conductive functional layer 5 a
- Region between the organic semiconductive layer 2b and the electrically conductive functional layer 5b has a via or an opening. Direct contact between the organic semiconductive layer 2b and the electrically conductive functional layer 5a is possible via the via.
- FIG. 4b shows the cross section B - B 'through the substrate 1 and the layers 5a, 2b, 5b arranged thereon from FIG. 4a in the region of a diode. It can be seen that the electrically conductive functional layers 5a, 5b of gold, which form electrodes here, overlap in the region of the strip-shaped layer 2b. Thus, through each unit consisting of a functional layer 5b, the stripe-shaped layer 2b is placed over the functional layer 5b and over it
- FIG. 4a two diode units can be seen.
- the electrodes 5a, 5b still have to be contacted in accordance with conductor tracks in order to realize an interconnection of the components with one another.
- FIG. 5a shows a flexible strip-shaped substrate 1 with a strip-shaped layer 2d made of electrically insulating functional layer material, here polyvinylphenol.
- a strip-shaped layer 2 a of electrically conductive functional layer material is formed in regions in the longitudinal direction, here by printing.
- the strip-shaped layer 2 a of electrically conductive functional layer material is further overprinted with a strip-shaped layer 2 d of electrically insulating functional layer material, which is formed over the entire length of the substrate 1.
- an opening 4 b is formed perpendicular to the longitudinal direction of the substrate 1.
- the two strip-shaped layers 2c are simultaneously formed by printing, which are likewise formed from electrically conductive functional layer material.
- an electrically conductive connection is formed between the strip-shaped layer 2a and the strip layer 2c arranged on the left (see also FIG. 5b). Accordingly, the opening 4b functions as a so-called via, which enables a three-dimensional interconnection of electrical functional layers.
- FIG. 5b shows the longitudinal section C - C through the substrate 1 from FIG. 5a in order to illustrate the formation of the electrically conductive connection in the region of the via.
- FIG. 6 a shows a flexible strip-shaped substrate 1 made of PET with a strip-shaped layer 5 a, which is subdivided several times by laser, made of electrically conductive functional layer material, here polyaniline or gold.
- electrically conductive functional layer material here polyaniline or gold.
- rectilinearly extending openings 4b and meandering openings 4c were formed and two further strip-shaped layers, once a non-illustrated semiconducting layer 2b and further a layer 2d of electrically insulating functional layer material, here polyvinylphenol, formed above.
- the Layer regions of the strip-shaped layer 5a before and after a meander-shaped opening 4c, and the strip-shaped layers 2b, 2d arranged above the meander form a separate unit which forms a resistance.
- the leakage current of the semiconductor causes the resistance.
- two resistance units can be seen in FIG. 6a.
- FIG. 6b shows the cross section D - D 'through the substrate 1 from FIG. 6a, the semiconducting layer 2b being visible between the strip-shaped layer 5a and the electrically insulating layer 2d.
- FIG. 7a shows a detail of an electrical circuit, in this case a ring oscillator circuit, in plan view.
- electrically conductive functional layers 2 a On a substrate 1 there are electrically conductive functional layers 2 a, which are covered by a thin, fully applied organic semiconductive functional layer 2 b.
- organic, semiconductive functional layer 2b On the organic, semiconductive functional layer 2b there is an electrically insulating functional layer 2d applied over the entire area and in strips, which has an opening 4b in the region in which the section E-E 'is laid, which was subsequently formed with a laser.
- electrically insulating layer 2d On the electrically insulating layer 2d is another electrically conductive layer 2c, which is strip-shaped.
- the electrically conductive layer 2c In the region of the opening in the electrically insulating layer 2d is the electrically conductive layer 2c in each case in contact with the electrically conductive functional layer 2a, after the semiconductive layer 2b is made so thin that an electrical contact or a short circuit between the conductive layers 2a and 2c is formed in the region of this opening.
- the electrically conductive layer 2 a, the semiconducting layer 2 b, the electrically insulating layer 2 d and the electrically conductive layer 2 c are arranged one above the other and also in the region of the comb structures within the electrically conductive layer 2 a, one is in each case organic Field effect transistor formed.
- FIGS 1 a to 7 b are merely illustrative of the inventive concept. On this basis, the person skilled in the art will readily be able to find further electronic circuits and application examples for which layers applied in strips to a substrate can be used without departing from the invention. So should the figures Ia to 7b no
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102005044306A DE102005044306A1 (en) | 2005-09-16 | 2005-09-16 | Electronic circuit and method for producing such |
PCT/EP2006/008930 WO2007031303A1 (en) | 2005-09-16 | 2006-09-13 | Electronic circuit and method for the manufacture of the same |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1925033A1 true EP1925033A1 (en) | 2008-05-28 |
Family
ID=37433937
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP06792048A Withdrawn EP1925033A1 (en) | 2005-09-16 | 2006-09-13 | Electronic circuit and method for the manufacture of the same |
Country Status (6)
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US (1) | US8315061B2 (en) |
EP (1) | EP1925033A1 (en) |
KR (1) | KR20080045247A (en) |
CN (1) | CN101263602B (en) |
DE (1) | DE102005044306A1 (en) |
WO (1) | WO2007031303A1 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11665830B2 (en) | 2017-06-28 | 2023-05-30 | Honda Motor Co., Ltd. | Method of making smart functional leather |
US11225191B2 (en) | 2017-06-28 | 2022-01-18 | Honda Motor Co., Ltd. | Smart leather with wireless power |
US10953793B2 (en) | 2017-06-28 | 2021-03-23 | Honda Motor Co., Ltd. | Haptic function leather component and method of making the same |
US10742061B2 (en) | 2017-06-28 | 2020-08-11 | Honda Motor Co., Ltd. | Smart functional leather for recharging a portable electronic device |
US10682952B2 (en) | 2017-06-28 | 2020-06-16 | Honda Motor Co., Ltd. | Embossed smart functional premium natural leather |
US10272836B2 (en) | 2017-06-28 | 2019-04-30 | Honda Motor Co., Ltd. | Smart functional leather for steering wheel and dash board |
US11751337B2 (en) | 2019-04-26 | 2023-09-05 | Honda Motor Co., Ltd. | Wireless power of in-mold electronics and the application within a vehicle |
Family Cites Families (261)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB723598A (en) | 1951-09-07 | 1955-02-09 | Philips Nv | Improvements in or relating to methods of producing electrically conductive mouldings from plastics |
US3512052A (en) * | 1968-01-11 | 1970-05-12 | Gen Motors Corp | Metal-insulator-semiconductor voltage variable capacitor with controlled resistivity dielectric |
DE2102735B2 (en) | 1971-01-21 | 1979-05-10 | Transformatoren Union Ag, 7000 Stuttgart | Mill, eg for grinding plastics fillers - with electric circuit for controlling the throughput of the mill |
US3769096A (en) | 1971-03-12 | 1973-10-30 | Bell Telephone Labor Inc | Pyroelectric devices |
AU488652B2 (en) | 1973-09-26 | 1976-04-01 | Commonwealth Scientific And Industrial Research Organisation | Improvements in or relating to security tokens |
JPS543594B2 (en) * | 1973-10-12 | 1979-02-24 | ||
DE2407110C3 (en) | 1974-02-14 | 1981-04-23 | Siemens AG, 1000 Berlin und 8000 München | Sensor for the detection of a substance contained in a gas or a liquid |
JPS54101176A (en) | 1978-01-26 | 1979-08-09 | Shinetsu Polymer Co | Contact member for push switch |
US4442019A (en) * | 1978-05-26 | 1984-04-10 | Marks Alvin M | Electroordered dipole suspension |
US4246298A (en) * | 1979-03-14 | 1981-01-20 | American Can Company | Rapid curing of epoxy resin coating compositions by combination of photoinitiation and controlled heat application |
JPS5641938U (en) | 1979-09-10 | 1981-04-17 | ||
US4340057A (en) * | 1980-12-24 | 1982-07-20 | S. C. Johnson & Son, Inc. | Radiation induced graft polymerization |
US4472627A (en) | 1982-09-30 | 1984-09-18 | The United States Of America As Represented By The Secretary Of The Treasury | Authenticating and anti-counterfeiting device for currency |
JPS59145576A (en) | 1982-11-09 | 1984-08-21 | ザイトレツクス・コ−ポレ−シヨン | Programmable mos transistor |
DE3321071A1 (en) | 1983-06-10 | 1984-12-13 | Basf Ag | PRESSURE SWITCH |
US4587719A (en) * | 1983-08-01 | 1986-05-13 | The Board Of Trustees Of The Leland Stanford Junior University | Method of fabrication of long arrays using a short substrate |
DE3338597A1 (en) | 1983-10-24 | 1985-05-02 | GAO Gesellschaft für Automation und Organisation mbH, 8000 München | DATA CARRIER WITH INTEGRATED CIRCUIT AND METHOD FOR PRODUCING THE SAME |
US4554229A (en) | 1984-04-06 | 1985-11-19 | At&T Technologies, Inc. | Multilayer hybrid integrated circuit |
JPS6265472A (en) | 1985-09-18 | 1987-03-24 | Toshiba Corp | Mis type semiconductor element |
US4726659A (en) | 1986-02-24 | 1988-02-23 | Rca Corporation | Display device having different alignment layers |
EP0239808B1 (en) * | 1986-03-03 | 1991-02-27 | Kabushiki Kaisha Toshiba | Radiation detecting device |
DE3751376T2 (en) | 1986-10-13 | 1995-11-16 | Canon Kk | Circuit element. |
GB2215307B (en) | 1988-03-04 | 1991-10-09 | Unisys Corp | Electronic component transportation container |
WO1989012871A1 (en) | 1988-06-21 | 1989-12-28 | W & T Avery Limited | Manufacturing portable electronic tokens |
US5364735A (en) | 1988-07-01 | 1994-11-15 | Sony Corporation | Multiple layer optical record medium with protective layers and method for producing same |
US4937119A (en) * | 1988-12-15 | 1990-06-26 | Hoechst Celanese Corp. | Textured organic optical data storage media and methods of preparation |
US5892244A (en) * | 1989-01-10 | 1999-04-06 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor including πconjugate polymer and liquid crystal display including the field effect transistor |
FR2644920B1 (en) | 1989-03-21 | 1993-09-24 | France Etat | POLYCHROMIC DISPLAY DEVICE WITH PHOTOCONDUCTOR-LIGHT EMITTING TYPE |
US6331356B1 (en) * | 1989-05-26 | 2001-12-18 | International Business Machines Corporation | Patterns of electrically conducting polymers and their application as electrodes or electrical contacts |
DE69018348T2 (en) | 1989-07-25 | 1995-08-03 | Matsushita Electric Ind Co Ltd | Organic semiconductor memory device with a MISFET structure and its control method. |
FI84862C (en) | 1989-08-11 | 1992-01-27 | Vaisala Oy | Capacitive humidifier construction and method of making it |
DE3942663A1 (en) | 1989-12-22 | 1991-06-27 | Gao Ges Automation Org | DATA CARRIER WITH A LIQUID CRYSTAL SECURITY ELEMENT |
US5206525A (en) * | 1989-12-27 | 1993-04-27 | Nippon Petrochemicals Co., Ltd. | Electric element capable of controlling the electric conductivity of π-conjugated macromolecular materials |
FI91573C (en) | 1990-01-04 | 1994-07-11 | Neste Oy | Method for manufacturing electronic and electro-optical components and circuits |
JP2969184B2 (en) | 1990-04-09 | 1999-11-02 | カシオ計算機株式会社 | Thin film transistor memory |
FR2664430B1 (en) | 1990-07-04 | 1992-09-18 | Centre Nat Rech Scient | THIN FILM FIELD EFFECT TRANSISTOR WITH MIS STRUCTURE, IN WHICH THE INSULATION AND THE SEMICONDUCTOR ARE MADE OF ORGANIC MATERIALS. |
US5202677A (en) * | 1991-01-31 | 1993-04-13 | Crystal Images, Inc. | Display apparatus using thermochromic material |
DE4103675C2 (en) | 1991-02-07 | 1993-10-21 | Telefunken Microelectron | Circuit for voltage surge of AC input signals |
FR2673041A1 (en) | 1991-02-19 | 1992-08-21 | Gemplus Card Int | METHOD FOR MANUFACTURING INTEGRATED CIRCUIT MICROMODULES AND CORRESPONDING MICROMODULE. |
EP0501456A3 (en) | 1991-02-26 | 1992-09-09 | Sony Corporation | Video game computer provided with an optical disc drive |
US5408109A (en) * | 1991-02-27 | 1995-04-18 | The Regents Of The University Of California | Visible light emitting diodes fabricated from soluble semiconducting polymers |
EP0511807A1 (en) | 1991-04-27 | 1992-11-04 | Gec Avery Limited | Apparatus and sensor unit for monitoring changes in a physical quantity with time |
JP3224829B2 (en) | 1991-08-15 | 2001-11-05 | 株式会社東芝 | Organic field effect device |
JPH0580530A (en) | 1991-09-24 | 1993-04-02 | Hitachi Ltd | Production of thin film pattern |
US5173835A (en) | 1991-10-15 | 1992-12-22 | Motorola, Inc. | Voltage variable capacitor |
DE59105477D1 (en) * | 1991-10-30 | 1995-06-14 | Fraunhofer Ges Forschung | EXPOSURE DEVICE. |
JP2709223B2 (en) * | 1992-01-30 | 1998-02-04 | 三菱電機株式会社 | Non-contact portable storage device |
FR2696043B1 (en) | 1992-09-18 | 1994-10-14 | Commissariat Energie Atomique | Support for a network of resistive elements made of conductive polymer and its manufacturing process. |
EP0603939B1 (en) | 1992-12-21 | 1999-06-16 | Koninklijke Philips Electronics N.V. | N-type conductive polymer and method of preparing such a polymer |
DE4243832A1 (en) | 1992-12-23 | 1994-06-30 | Daimler Benz Ag | Push button arrangement |
JP3457348B2 (en) * | 1993-01-15 | 2003-10-14 | 株式会社東芝 | Method for manufacturing semiconductor device |
FR2701117B1 (en) * | 1993-02-04 | 1995-03-10 | Asulab Sa | Electrochemical measurement system with multizone sensor, and its application to glucose measurement. |
EP0615256B1 (en) | 1993-03-09 | 1998-09-23 | Koninklijke Philips Electronics N.V. | Method of manufacturing a pattern of an electrically conductive polymer on a substrate surface and method of metallizing such a pattern |
US5567550A (en) | 1993-03-25 | 1996-10-22 | Texas Instruments Incorporated | Method of making a mask for making integrated circuits |
DE4312766C2 (en) | 1993-04-20 | 1997-02-27 | Telefunken Microelectron | Circuit for voltage boost |
JPH0722669A (en) * | 1993-07-01 | 1995-01-24 | Mitsubishi Electric Corp | Plastic functional element |
WO1995006240A1 (en) | 1993-08-24 | 1995-03-02 | Metrika Laboratories, Inc. | Novel disposable electronic assay device |
JP3460863B2 (en) | 1993-09-17 | 2003-10-27 | 三菱電機株式会社 | Method for manufacturing semiconductor device |
FR2710413B1 (en) * | 1993-09-21 | 1995-11-03 | Asulab Sa | Measuring device for removable sensors. |
US5556706A (en) | 1993-10-06 | 1996-09-17 | Matsushita Electric Industrial Co., Ltd. | Conductive layered product and method of manufacturing the same |
IL111151A (en) | 1994-10-03 | 1998-09-24 | News Datacom Ltd | Secure access systems |
US6028649A (en) * | 1994-04-21 | 2000-02-22 | Reveo, Inc. | Image display systems having direct and projection viewing modes |
EP0708987B1 (en) * | 1994-05-16 | 2003-08-13 | Koninklijke Philips Electronics N.V. | Semiconductor device provided with an organic semiconductor material |
IL110318A (en) | 1994-05-23 | 1998-12-27 | Al Coat Ltd | Polyaniline-containing solutions for preparing transparent electrodes for liquid crystal devices |
US5684884A (en) | 1994-05-31 | 1997-11-04 | Hitachi Metals, Ltd. | Piezoelectric loudspeaker and a method for manufacturing the same |
JP3246189B2 (en) | 1994-06-28 | 2002-01-15 | 株式会社日立製作所 | Semiconductor display device |
US5528222A (en) * | 1994-09-09 | 1996-06-18 | International Business Machines Corporation | Radio frequency circuit and memory in thin flexible package |
US5574291A (en) | 1994-12-09 | 1996-11-12 | Lucent Technologies Inc. | Article comprising a thin film transistor with low conductivity organic layer |
US5630986A (en) * | 1995-01-13 | 1997-05-20 | Bayer Corporation | Dispensing instrument for fluid monitoring sensors |
DE19506907A1 (en) | 1995-02-28 | 1996-09-05 | Telefunken Microelectron | Voltage or current level input signal changing circuit for e.g. EEPROM |
JP3068430B2 (en) * | 1995-04-25 | 2000-07-24 | 富山日本電気株式会社 | Solid electrolytic capacitor and method of manufacturing the same |
JPH08328031A (en) * | 1995-06-02 | 1996-12-13 | Sharp Corp | Full-color liquid crystal display device and its production |
US5622652A (en) * | 1995-06-07 | 1997-04-22 | Img Group Limited | Electrically-conductive liquid for directly printing an electrical circuit component onto a substrate, and a method for making such a liquid |
JPH0933645A (en) | 1995-07-21 | 1997-02-07 | Oki Electric Ind Co Ltd | Power supply circuit of transponder |
US5652645A (en) * | 1995-07-24 | 1997-07-29 | Anvik Corporation | High-throughput, high-resolution, projection patterning system for large, flexible, roll-fed, electronic-module substrates |
US5707894A (en) * | 1995-10-27 | 1998-01-13 | United Microelectronics Corporation | Bonding pad structure and method thereof |
US5625199A (en) * | 1996-01-16 | 1997-04-29 | Lucent Technologies Inc. | Article comprising complementary circuit with inorganic n-channel and organic p-channel thin film transistors |
US6469683B1 (en) | 1996-01-17 | 2002-10-22 | Nippon Telegraph And Telephone Corporation | Liquid crystal optical device |
US6326640B1 (en) | 1996-01-29 | 2001-12-04 | Motorola, Inc. | Organic thin film transistor with enhanced carrier mobility |
GB2310493B (en) * | 1996-02-26 | 2000-08-02 | Unilever Plc | Determination of the characteristics of fluid |
JP3080579B2 (en) | 1996-03-06 | 2000-08-28 | 富士機工電子株式会社 | Manufacturing method of air rear grid array package |
DE19610284A1 (en) | 1996-03-15 | 1997-08-07 | Siemens Ag | Transponder antenna coil design |
JP2000512428A (en) * | 1996-06-12 | 2000-09-19 | ザ トラスティーズ オブ プリンストン ユニバーシテイ | Thin film patterning for organic multicolor display manufacturing |
DE19629656A1 (en) * | 1996-07-23 | 1998-01-29 | Boehringer Mannheim Gmbh | Diagnostic test carrier with multilayer test field and method for the determination of analyte with its aid |
US5693956A (en) | 1996-07-29 | 1997-12-02 | Motorola | Inverted oleds on hard plastic substrate |
EP0824301A3 (en) * | 1996-08-09 | 1999-08-11 | Hitachi, Ltd. | Printed circuit board, IC card, and manufacturing method thereof |
DE19648937A1 (en) | 1996-11-26 | 1997-05-15 | Meonic Sys Eng Gmbh | Product recognition electronic label |
US6259506B1 (en) * | 1997-02-18 | 2001-07-10 | Spectra Science Corporation | Field activated security articles including polymer dispersed liquid crystals, and including micro-encapsulated field affected materials |
US6344662B1 (en) * | 1997-03-25 | 2002-02-05 | International Business Machines Corporation | Thin-film field-effect transistor with organic-inorganic hybrid semiconductor requiring low operating voltages |
US5946551A (en) | 1997-03-25 | 1999-08-31 | Dimitrakopoulos; Christos Dimitrios | Fabrication of thin film effect transistor comprising an organic semiconductor and chemical solution deposited metal oxide gate dielectric |
US5841325A (en) | 1997-05-12 | 1998-11-24 | Hewlett-Packard Company | Fully-integrated high-speed interleaved voltage-controlled ring oscillator |
KR100248392B1 (en) | 1997-05-15 | 2000-09-01 | 정선종 | The operation and control of the organic electroluminescent devices with organic field effect transistors |
JP4509228B2 (en) | 1997-08-22 | 2010-07-21 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Field effect transistor made of organic material and method of manufacturing the same |
US5973598A (en) | 1997-09-11 | 1999-10-26 | Precision Dynamics Corporation | Radio frequency identification tag on flexible substrate |
EP1296280A1 (en) | 1997-09-11 | 2003-03-26 | Precision Dynamics Corporation | Rf-id tag with integrated circuit consisting of organic materials |
US6251513B1 (en) | 1997-11-08 | 2001-06-26 | Littlefuse, Inc. | Polymer composites for overvoltage protection |
JPH11142810A (en) | 1997-11-12 | 1999-05-28 | Nintendo Co Ltd | Portable information processor |
EP0958663A1 (en) | 1997-12-05 | 1999-11-24 | Koninklijke Philips Electronics N.V. | Identification transponder |
US5997817A (en) | 1997-12-05 | 1999-12-07 | Roche Diagnostics Corporation | Electrochemical biosensor test strip |
US5998805A (en) | 1997-12-11 | 1999-12-07 | Motorola, Inc. | Active matrix OED array with improved OED cathode |
US6083104A (en) * | 1998-01-16 | 2000-07-04 | Silverlit Toys (U.S.A.), Inc. | Programmable toy with an independent game cartridge |
CN1171301C (en) * | 1998-01-28 | 2004-10-13 | 薄膜电子有限公司 | Method for generating electrical conducting or semiconducting structures in two or three dimensions, method for erasing same structures and electric field generator/modulator |
US6087196A (en) * | 1998-01-30 | 2000-07-11 | The Trustees Of Princeton University | Fabrication of organic semiconductor devices using ink jet printing |
US6045977A (en) * | 1998-02-19 | 2000-04-04 | Lucent Technologies Inc. | Process for patterning conductive polyaniline films |
JPH11249494A (en) | 1998-03-03 | 1999-09-17 | Canon Inc | Drum flange, cylindrical member, process cartridge and electrophotographic image forming device |
DE19816860A1 (en) | 1998-03-06 | 1999-11-18 | Deutsche Telekom Ag | Chip card, especially credit card |
US6033202A (en) | 1998-03-27 | 2000-03-07 | Lucent Technologies Inc. | Mold for non - photolithographic fabrication of microstructures |
US6369793B1 (en) * | 1998-03-30 | 2002-04-09 | David C. Zimman | Printed display and battery |
JP4664501B2 (en) * | 1998-04-10 | 2011-04-06 | イー インク コーポレイション | Electronic display using organic field effect transistors |
GB9808061D0 (en) | 1998-04-16 | 1998-06-17 | Cambridge Display Tech Ltd | Polymer devices |
NL1008929C2 (en) * | 1998-04-20 | 1999-10-21 | Vhp Ugchelen Bv | Substrate made of paper provided with an integrated circuit. |
GB9808806D0 (en) | 1998-04-24 | 1998-06-24 | Cambridge Display Tech Ltd | Selective deposition of polymer films |
TW410478B (en) | 1998-05-29 | 2000-11-01 | Lucent Technologies Inc | Thin-film transistor monolithically integrated with an organic light-emitting diode |
US6107920A (en) | 1998-06-09 | 2000-08-22 | Motorola, Inc. | Radio frequency identification tag having an article integrated antenna |
US5967048A (en) | 1998-06-12 | 1999-10-19 | Howard A. Fromson | Method and apparatus for the multiple imaging of a continuous web |
KR100282393B1 (en) | 1998-06-17 | 2001-02-15 | 구자홍 | method for fabricating Organic Electroluminescent display Device |
KR100393324B1 (en) * | 1998-06-19 | 2003-07-31 | 띤 필름 일렉트로닉스 에이에스에이 | An integrated inorganic/organic complementary thin-film transistor circuit and a method for its production |
DE19836174C2 (en) | 1998-08-10 | 2000-10-12 | Illig Maschinenbau Adolf | Heater for heating thermoplastic sheets and method for adjusting the temperature of this heater |
US6215130B1 (en) * | 1998-08-20 | 2001-04-10 | Lucent Technologies Inc. | Thin film transistors |
CN102226766B (en) | 1998-08-26 | 2017-03-01 | 医药及科学传感器公司 | Based on optical sensing device further |
JP4493741B2 (en) | 1998-09-04 | 2010-06-30 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
EP0996176B8 (en) | 1998-10-13 | 2005-10-19 | Sony Deutschland GmbH | Method of fabricating an active matrix light-emitting display device |
US6566153B1 (en) * | 1998-10-14 | 2003-05-20 | The Regents Of The University Of California | Process for fabricating organic semiconductor devices using ink-jet printing technology and device and system employing same |
DE19851703A1 (en) | 1998-10-30 | 2000-05-04 | Inst Halbleiterphysik Gmbh | Electronic structure, e.g. FET, is produced by plotting, spraying, spin coating or spreading of insulating, semiconducting and-or conductive layers onto a substrate |
US6384804B1 (en) * | 1998-11-25 | 2002-05-07 | Lucent Techonologies Inc. | Display comprising organic smart pixels |
US6021050A (en) * | 1998-12-02 | 2000-02-01 | Bourns, Inc. | Printed circuit boards with integrated passive components and method for making same |
US6506438B2 (en) * | 1998-12-15 | 2003-01-14 | E Ink Corporation | Method for printing of transistor arrays on plastic substrates |
US6321571B1 (en) | 1998-12-21 | 2001-11-27 | Corning Incorporated | Method of making glass structures for flat panel displays |
DE60035078T2 (en) | 1999-01-15 | 2008-01-31 | 3M Innovative Properties Co., St. Paul | Manufacturing method of a heat transfer donor element |
US6114088A (en) * | 1999-01-15 | 2000-09-05 | 3M Innovative Properties Company | Thermal transfer element for forming multilayer devices |
GB2347013A (en) * | 1999-02-16 | 2000-08-23 | Sharp Kk | Charge-transport structures |
JP3990539B2 (en) * | 1999-02-22 | 2007-10-17 | 新日本製鐵株式会社 | High-strength hot-dip galvanized steel sheet and high-strength galvannealed steel sheet excellent in plating adhesion and press formability and method for producing the same |
AU5646800A (en) | 1999-03-02 | 2000-09-21 | Helix Biopharma Corporation | Card-based biosensor device |
US6180956B1 (en) | 1999-03-03 | 2001-01-30 | International Business Machine Corp. | Thin film transistors with organic-inorganic hybrid materials as semiconducting channels |
US6207472B1 (en) * | 1999-03-09 | 2001-03-27 | International Business Machines Corporation | Low temperature thin film transistor fabrication |
US6878312B1 (en) | 1999-03-29 | 2005-04-12 | Seiko Epson Corporation | Composition, film manufacturing method, as well as functional device and manufacturing method therefore |
DE60036449T2 (en) | 1999-03-30 | 2008-06-19 | Seiko Epson Corp. | METHOD FOR HOLDING A THIN-FILTER EFFECT TRANSISTOR |
US6498114B1 (en) | 1999-04-09 | 2002-12-24 | E Ink Corporation | Method for forming a patterned semiconductor film |
US6072716A (en) * | 1999-04-14 | 2000-06-06 | Massachusetts Institute Of Technology | Memory structures and methods of making same |
US6387736B1 (en) * | 1999-04-26 | 2002-05-14 | Agilent Technologies, Inc. | Method and structure for bonding layers in a semiconductor device |
FR2793089B3 (en) | 1999-04-28 | 2001-06-08 | Rene Liger | TRANSPONDER WITH INTEGRATED ANTENNA |
US6736985B1 (en) * | 1999-05-05 | 2004-05-18 | Agere Systems Inc. | High-resolution method for patterning a substrate with micro-printing |
DE19920593B4 (en) * | 1999-05-05 | 2006-07-13 | Assa Abloy Identification Technology Group Ab | Chip carrier for a chip module and method for producing the chip module |
DE19921024C2 (en) | 1999-05-06 | 2001-03-08 | Wolfgang Eichelmann | Video game system |
US6383664B2 (en) * | 1999-05-11 | 2002-05-07 | The Dow Chemical Company | Electroluminescent or photocell device having protective packaging |
JP4136185B2 (en) * | 1999-05-12 | 2008-08-20 | パイオニア株式会社 | Organic electroluminescent multicolor display and method for manufacturing the same |
EP1052594A1 (en) | 1999-05-14 | 2000-11-15 | Sokymat S.A. | Transponder and molding die, and their method of manufacture |
JP2002544744A (en) | 1999-05-17 | 2002-12-24 | ザ・グッドイヤー・タイヤ・アンド・ラバー・カンパニー | Programmable modulation index for transponder |
TW556357B (en) * | 1999-06-28 | 2003-10-01 | Semiconductor Energy Lab | Method of manufacturing an electro-optical device |
DE50013674D1 (en) | 1999-07-06 | 2006-12-14 | Elmos Semiconductor Ag | CMOS compatible SOI process |
US6366017B1 (en) * | 1999-07-14 | 2002-04-02 | Agilent Technologies, Inc/ | Organic light emitting diodes with distributed bragg reflector |
JP2001085272A (en) | 1999-07-14 | 2001-03-30 | Matsushita Electric Ind Co Ltd | Variable capacitor |
DE19933757A1 (en) | 1999-07-19 | 2001-01-25 | Giesecke & Devrient Gmbh | Manufacturing chip card with integral battery involves applying first conducting track structure, electrolyte and second conducting track structure to form opposite polarity electrodes |
DE19935527A1 (en) | 1999-07-28 | 2001-02-08 | Giesecke & Devrient Gmbh | Active film for chip cards with display |
DE19937262A1 (en) | 1999-08-06 | 2001-03-01 | Siemens Ag | Arrangement with transistor function |
US6593690B1 (en) * | 1999-09-03 | 2003-07-15 | 3M Innovative Properties Company | Large area organic electronic devices having conducting polymer buffer layers and methods of making same |
JP4595143B2 (en) * | 1999-09-06 | 2010-12-08 | 双葉電子工業株式会社 | Organic EL device and manufacturing method thereof |
EP1085320A1 (en) * | 1999-09-13 | 2001-03-21 | Interuniversitair Micro-Elektronica Centrum Vzw | A device for detecting an analyte in a sample based on organic materials |
US6517995B1 (en) | 1999-09-14 | 2003-02-11 | Massachusetts Institute Of Technology | Fabrication of finely featured devices by liquid embossing |
WO2001023131A1 (en) | 1999-09-28 | 2001-04-05 | Sumitomo Heavy Industries, Ltd. | Laser drilling method and laser drilling device |
US6340822B1 (en) * | 1999-10-05 | 2002-01-22 | Agere Systems Guardian Corp. | Article comprising vertically nano-interconnected circuit devices and method for making the same |
WO2001027998A1 (en) * | 1999-10-11 | 2001-04-19 | Koninklijke Philips Electronics N.V. | Integrated circuit |
US6335539B1 (en) * | 1999-11-05 | 2002-01-01 | International Business Machines Corporation | Method for improving performance of organic semiconductors in bottom electrode structure |
GB9926670D0 (en) * | 1999-11-12 | 2000-01-12 | Univ Liverpool | Field effect transistor (FET) and FET circuitry |
US6284562B1 (en) | 1999-11-17 | 2001-09-04 | Agere Systems Guardian Corp. | Thin film transistors |
JP2001147659A (en) | 1999-11-18 | 2001-05-29 | Sony Corp | Display device |
EP1103916A1 (en) | 1999-11-24 | 2001-05-30 | Infineon Technologies AG | IC-card |
US6136702A (en) | 1999-11-29 | 2000-10-24 | Lucent Technologies Inc. | Thin film transistors |
US6621098B1 (en) | 1999-11-29 | 2003-09-16 | The Penn State Research Foundation | Thin-film transistor and methods of manufacturing and incorporating a semiconducting organic material |
US6197663B1 (en) * | 1999-12-07 | 2001-03-06 | Lucent Technologies Inc. | Process for fabricating integrated circuit devices having thin film transistors |
CA2394886C (en) * | 1999-12-21 | 2012-07-17 | Plastic Logic Limited | Inkjet-fabricated integrated circuits |
CA2394895C (en) * | 1999-12-21 | 2014-01-28 | Plastic Logic Limited | Forming interconnects |
US7002451B2 (en) | 2000-01-11 | 2006-02-21 | Freeman Jeffrey R | Package location system |
JP2002162652A (en) | 2000-01-31 | 2002-06-07 | Fujitsu Ltd | Sheet-like display device, resin spherical body and microcapsule |
US6706159B2 (en) | 2000-03-02 | 2004-03-16 | Diabetes Diagnostics | Combined lancet and electrochemical analyte-testing apparatus |
TW497120B (en) * | 2000-03-06 | 2002-08-01 | Toshiba Corp | Transistor, semiconductor device and manufacturing method of semiconductor device |
JP3614747B2 (en) | 2000-03-07 | 2005-01-26 | Necエレクトロニクス株式会社 | BOOST CIRCUIT, IC CARD WITH THE SAME AND ELECTRONIC DEVICE WITH THE SAME |
DE10012204A1 (en) | 2000-03-13 | 2001-09-20 | Siemens Ag | Electronic postage stamp for identifying postal articles |
EP1134694A1 (en) | 2000-03-16 | 2001-09-19 | Infineon Technologies AG | Document with integrated electronic circuit |
JP2001267578A (en) | 2000-03-17 | 2001-09-28 | Sony Corp | Thin-film semiconductor device, and method for manufacturing the same |
ATE311472T1 (en) | 2000-03-28 | 2005-12-15 | Diabetes Diagnostics Inc | CONTINUOUS PROCESS FOR PRODUCING DISPOSABLE ELECTROCHEMICAL SENSORS |
US6906842B2 (en) | 2000-05-24 | 2005-06-14 | Schott North America, Inc. | Electrochromic devices |
US6535057B2 (en) | 2000-05-29 | 2003-03-18 | Stmicroelectronics Ltd. | Programmable glitch filter |
US6329226B1 (en) | 2000-06-01 | 2001-12-11 | Agere Systems Guardian Corp. | Method for fabricating a thin-film transistor |
CN1211695C (en) * | 2000-06-06 | 2005-07-20 | 皇家菲利浦电子有限公司 | Liquid crystal display device and method of manufacturing such |
DE10032260B4 (en) | 2000-07-03 | 2004-04-29 | Texas Instruments Deutschland Gmbh | Circuit arrangement for doubling the voltage of a battery |
DE10033112C2 (en) * | 2000-07-07 | 2002-11-14 | Siemens Ag | Process for the production and structuring of organic field-effect transistors (OFET), OFET produced thereafter and its use |
US6483473B1 (en) | 2000-07-18 | 2002-11-19 | Marconi Communications Inc. | Wireless communication device and method |
DE10120687A1 (en) | 2001-04-27 | 2002-10-31 | Siemens Ag | Encapsulated organic-electronic circuit has electronic components especially made of organic material and arranged between at least two layers forming barrier |
EP1309994A2 (en) * | 2000-08-18 | 2003-05-14 | Siemens Aktiengesellschaft | Encapsulated organic-electronic component, method for producing the same and use thereof |
EP1310004A2 (en) * | 2000-08-18 | 2003-05-14 | Siemens Aktiengesellschaft | Organic field-effect transistor (ofet), a production method therefor, an integrated circuit constructed from the same and their uses |
JP2002068324A (en) | 2000-08-30 | 2002-03-08 | Nippon Sanso Corp | Heat-insulating container |
DE10043204A1 (en) | 2000-09-01 | 2002-04-04 | Siemens Ag | Organic field-effect transistor, method for structuring an OFET and integrated circuit |
US6699728B2 (en) * | 2000-09-06 | 2004-03-02 | Osram Opto Semiconductors Gmbh | Patterning of electrodes in oled devices |
DE10044842A1 (en) | 2000-09-11 | 2002-04-04 | Siemens Ag | Organic rectifier, circuit, RFID tag and use of an organic rectifier |
DE10045192A1 (en) * | 2000-09-13 | 2002-04-04 | Siemens Ag | Organic data storage, RFID tag with organic data storage, use of an organic data storage |
CA2357324A1 (en) * | 2000-09-15 | 2002-03-15 | James D. Huggins | Continuous feed coater |
DE10047171A1 (en) | 2000-09-22 | 2002-04-18 | Siemens Ag | Electrode and/or conductor track used for components of OFETs and OLEDs is produced by treating an organic functional polymer with a chemical compound |
GB0024294D0 (en) * | 2000-10-04 | 2000-11-15 | Univ Cambridge Tech | Solid state embossing of polymer devices |
KR20020036916A (en) * | 2000-11-11 | 2002-05-17 | 주승기 | Method of crystallizing a silicon thin film and semiconductor device fabricated thereby |
DE10058559A1 (en) | 2000-11-24 | 2002-05-29 | Interactiva Biotechnologie Gmb | System for distribution of refrigerated goods has communication network connecting supplier to local storage areas and hence to customers |
US6859093B1 (en) * | 2000-11-28 | 2005-02-22 | Precision Dynamics Corporation | Rectifying charge storage device with bi-stable states |
KR100390522B1 (en) * | 2000-12-01 | 2003-07-07 | 피티플러스(주) | Method for fabricating thin film transistor including a crystalline silicone active layer |
DE10061297C2 (en) | 2000-12-08 | 2003-05-28 | Siemens Ag | Procedure for structuring an OFET |
DE10162037A1 (en) * | 2000-12-18 | 2002-09-12 | Cubit Electronics Gmbh | Retainer of active or passive electric components on flexible, insulating, miniaturized support foil |
GB2371910A (en) * | 2001-01-31 | 2002-08-07 | Seiko Epson Corp | Display devices |
DE10105914C1 (en) * | 2001-02-09 | 2002-10-10 | Siemens Ag | Organic field effect transistor with photo-structured gate dielectric and a method for its production |
EP1237207B1 (en) | 2001-03-02 | 2012-01-04 | FUJIFILM Corporation | Method for producing organic thin film device |
JP2002289355A (en) | 2001-03-26 | 2002-10-04 | Pioneer Electronic Corp | Organic semiconductor diode and organic electroluminescense element display |
DE10117663B4 (en) | 2001-04-09 | 2004-09-02 | Samsung SDI Co., Ltd., Suwon | Process for the production of matrix arrangements based on various types of organic conductive materials |
DE10120686A1 (en) | 2001-04-27 | 2002-11-07 | Siemens Ag | Process for producing thin homogeneous layers with the help of screen printing technology, device for carrying out the process and its use |
WO2002091495A2 (en) | 2001-05-07 | 2002-11-14 | Coatue Corporation | Molecular memory device |
US20020170897A1 (en) | 2001-05-21 | 2002-11-21 | Hall Frank L. | Methods for preparing ball grid array substrates via use of a laser |
EP1393389B1 (en) * | 2001-05-23 | 2018-12-05 | Flexenable Limited | Laser patterning of devices |
DE10126860C2 (en) | 2001-06-01 | 2003-05-28 | Siemens Ag | Organic field effect transistor, process for its manufacture and use for the construction of integrated circuits |
DE10126859A1 (en) | 2001-06-01 | 2002-12-12 | Siemens Ag | Production of conducting structures used in organic FETs, illuminated diodes, organic diodes and integrated circuits comprises directly or indirectly forming conducting pathways |
US6870180B2 (en) | 2001-06-08 | 2005-03-22 | Lucent Technologies Inc. | Organic polarizable gate transistor apparatus and method |
JP2003017248A (en) * | 2001-06-27 | 2003-01-17 | Sony Corp | Electroluminescent element |
DE20111825U1 (en) | 2001-07-20 | 2002-01-17 | Lammering, Thomas, Dipl.-Ing., 33335 Gütersloh | Print media |
DE10141440A1 (en) | 2001-08-23 | 2003-03-13 | Daimler Chrysler Ag | tripod |
JP2003089259A (en) | 2001-09-18 | 2003-03-25 | Hitachi Ltd | Pattern forming method and pattern forming apparatus |
US7351660B2 (en) * | 2001-09-28 | 2008-04-01 | Hrl Laboratories, Llc | Process for producing high performance interconnects |
US6679036B2 (en) * | 2001-10-15 | 2004-01-20 | Shunchi Crankshaft Co., Ltd. | Drive gear shaft structure of a self-moving type mower |
DE10151036A1 (en) | 2001-10-16 | 2003-05-08 | Siemens Ag | Isolator for an organic electronic component |
DE10151440C1 (en) * | 2001-10-18 | 2003-02-06 | Siemens Ag | Organic electronic component for implementing an encapsulated partially organic electronic component has components like a flexible foil as an antenna, a diode or capacitor and an organic transistor. |
DE10153656A1 (en) | 2001-10-31 | 2003-05-22 | Infineon Technologies Ag | Process for reducing the contact resistance in organic field effect transistors by applying a reactive intermediate layer that doses the organic semiconductor layer in the contact region in a regio-selective manner |
DE10160732A1 (en) * | 2001-12-11 | 2003-06-26 | Siemens Ag | OFET used e.g. in RFID tag, comprises an intermediate layer on an active semiconductor layer |
DE10163267A1 (en) | 2001-12-21 | 2003-07-03 | Giesecke & Devrient Gmbh | Banknotes incorporating an electronic, data containing, circuit and transceiver and a device for processing said notes ensure that banknote handling is greatly simplified |
DE10209400A1 (en) | 2002-03-04 | 2003-10-02 | Infineon Technologies Ag | Transponder circuit for a transponder has a rectifier circuit with a component that has a coating of organic material |
US6596569B1 (en) * | 2002-03-15 | 2003-07-22 | Lucent Technologies Inc. | Thin film transistors |
US7204425B2 (en) | 2002-03-18 | 2007-04-17 | Precision Dynamics Corporation | Enhanced identification appliance |
DE10212640B4 (en) * | 2002-03-21 | 2004-02-05 | Siemens Ag | Logical components made of organic field effect transistors |
DE10219905B4 (en) | 2002-05-03 | 2011-06-22 | OSRAM Opto Semiconductors GmbH, 93055 | Optoelectronic component with organic functional layers and two carriers and method for producing such an optoelectronic component |
DE10229168A1 (en) | 2002-06-28 | 2004-01-29 | Infineon Technologies Ag | Laminate with an electrically conductive layer designed as an antenna structure |
US6812509B2 (en) * | 2002-06-28 | 2004-11-02 | Palo Alto Research Center Inc. | Organic ferroelectric memory cells |
EP1383179A2 (en) | 2002-07-17 | 2004-01-21 | Pioneer Corporation | Organic semiconductor device |
JP2004146400A (en) * | 2002-10-21 | 2004-05-20 | Hosiden Corp | Connecting structure of printed board and flexible board |
US6870183B2 (en) | 2002-11-04 | 2005-03-22 | Advanced Micro Devices, Inc. | Stacked organic memory devices and methods of operating and fabricating |
EP1563553B1 (en) * | 2002-11-19 | 2007-02-14 | PolyIC GmbH & Co. KG | Organic electronic circuitcomprising a structured, semi-conductive functional layer and a method for producing said component |
US7088145B2 (en) * | 2002-12-23 | 2006-08-08 | 3M Innovative Properties Company | AC powered logic circuitry |
EP1434281A3 (en) * | 2002-12-26 | 2007-10-24 | Konica Minolta Holdings, Inc. | Manufacturing method of thin-film transistor, thin-film transistor sheet, and electric circuit |
US6905908B2 (en) * | 2002-12-26 | 2005-06-14 | Motorola, Inc. | Method of fabricating organic field effect transistors |
TW556452B (en) * | 2003-01-30 | 2003-10-01 | Phoenix Prec Technology Corp | Integrated storage plate with embedded passive components and method for fabricating electronic device with the plate |
US8665247B2 (en) | 2003-05-30 | 2014-03-04 | Global Oled Technology Llc | Flexible display |
US6950157B2 (en) | 2003-06-05 | 2005-09-27 | Eastman Kodak Company | Reflective cholesteric liquid crystal display with complementary light-absorbing layer |
DE10330063A1 (en) * | 2003-07-03 | 2005-02-03 | Siemens Ag | Organic layer structuring method for organic integrated circuit manufacture e.g. for manufacture of radio frequency identification tag, using structured anorganic layer as structuring mask |
DE10330064B3 (en) | 2003-07-03 | 2004-12-09 | Siemens Ag | Organic logic gate has load field effect transistor with potential-free gate electrode in series with switching field effect transistor |
DE10335336B4 (en) | 2003-08-01 | 2011-06-16 | Polyic Gmbh & Co. Kg | Field effect devices and capacitors with electrode arrangement in a layer plane |
DE10338277A1 (en) | 2003-08-20 | 2005-03-17 | Siemens Ag | Organic capacitor with voltage controlled capacity |
DE10340641A1 (en) * | 2003-09-03 | 2005-04-07 | Siemens Ag | Production of a through-contact, especially an organic switch, for integrated plastic circuits comprises using a dispersion of a sulfonic acid derivative in an aqueous solvent mixture |
JP4400327B2 (en) * | 2003-09-11 | 2010-01-20 | セイコーエプソン株式会社 | Wiring formation method for tile-shaped element |
GB0321383D0 (en) * | 2003-09-12 | 2003-10-15 | Plastic Logic Ltd | Polymer circuits |
US7122828B2 (en) * | 2003-09-24 | 2006-10-17 | Lucent Technologies, Inc. | Semiconductor devices having regions of induced high and low conductivity, and methods of making the same |
US7358530B2 (en) * | 2003-12-12 | 2008-04-15 | Palo Alto Research Center Incorporated | Thin-film transistor array with ring geometry |
US7321496B2 (en) * | 2004-03-19 | 2008-01-22 | Matsushita Electric Industrial Co., Ltd. | Flexible substrate, multilayer flexible substrate and process for producing the same |
US7259106B2 (en) * | 2004-09-10 | 2007-08-21 | Versatilis Llc | Method of making a microelectronic and/or optoelectronic circuitry sheet |
US6964884B1 (en) * | 2004-11-19 | 2005-11-15 | Endicott Interconnect Technologies, Inc. | Circuitized substrates utilizing three smooth-sided conductive layers as part thereof, method of making same, and electrical assemblies and information handling systems utilizing same |
KR101137862B1 (en) * | 2005-06-17 | 2012-04-20 | 엘지디스플레이 주식회사 | Fabricating method for flat display device |
DE102005035590A1 (en) * | 2005-07-29 | 2007-02-01 | Polyic Gmbh & Co. Kg | Electronic component has flexible substrate and stack of layers including function layer on substratesurface |
DE102005035589A1 (en) * | 2005-07-29 | 2007-02-01 | Polyic Gmbh & Co. Kg | Manufacturing electronic component on surface of substrate where component has two overlapping function layers |
DE102006047388A1 (en) * | 2006-10-06 | 2008-04-17 | Polyic Gmbh & Co. Kg | Field effect transistor and electrical circuit |
-
2005
- 2005-09-16 DE DE102005044306A patent/DE102005044306A1/en not_active Ceased
-
2006
- 2006-09-13 KR KR1020087007438A patent/KR20080045247A/en active Search and Examination
- 2006-09-13 EP EP06792048A patent/EP1925033A1/en not_active Withdrawn
- 2006-09-13 US US11/991,887 patent/US8315061B2/en not_active Expired - Fee Related
- 2006-09-13 WO PCT/EP2006/008930 patent/WO2007031303A1/en active Application Filing
- 2006-09-13 CN CN2006800338187A patent/CN101263602B/en not_active Expired - Fee Related
Non-Patent Citations (1)
Title |
---|
See references of WO2007031303A1 * |
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CN101263602A (en) | 2008-09-10 |
KR20080045247A (en) | 2008-05-22 |
CN101263602B (en) | 2011-06-22 |
WO2007031303A1 (en) | 2007-03-22 |
DE102005044306A1 (en) | 2007-03-22 |
US20100214748A1 (en) | 2010-08-26 |
US8315061B2 (en) | 2012-11-20 |
US20120057311A9 (en) | 2012-03-08 |
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