EP1913630A2 - Dispositif a semi-conducteurs et procede de fabrication d'un tel dispositif - Google Patents

Dispositif a semi-conducteurs et procede de fabrication d'un tel dispositif

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Publication number
EP1913630A2
EP1913630A2 EP06780210A EP06780210A EP1913630A2 EP 1913630 A2 EP1913630 A2 EP 1913630A2 EP 06780210 A EP06780210 A EP 06780210A EP 06780210 A EP06780210 A EP 06780210A EP 1913630 A2 EP1913630 A2 EP 1913630A2
Authority
EP
European Patent Office
Prior art keywords
region
semiconductor
electrically insulating
semiconductor body
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP06780210A
Other languages
German (de)
English (en)
Inventor
Johannes J. T. M. Donkers
Wibo D. Van Noort
Francois Neuilly
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
NXP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP BV filed Critical NXP BV
Priority to EP06780210A priority Critical patent/EP1913630A2/fr
Publication of EP1913630A2 publication Critical patent/EP1913630A2/fr
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66242—Heterojunction transistors [HBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species

Definitions

  • the invention relates to a semiconductor device with a substrate and a semiconductor body of silicon comprising a bipolar transistor with an emitter region, a base region and a collector region of a first conductivity type, a second conductivity type opposite to the first conductivity type and said first conductivity type, respectively, with a first semiconductor region comprising the collector region or the emitter region being formed in the semiconductor body, on top of which a layered second semiconductor region comprising the base region is present, on top of which a third semiconductor region comprising the other of said collector region and said emitter region is present, said semiconductor body being provided with a constriction at the location of the transition between the first and the second semiconductor region, which constriction has been formed by means of an electrically insulating region buried in the semiconductor body.
  • the invention further relates to a method of manufacturing such a device.
  • Such a device and method are known from US patent US 2004/0224461.
  • Said document describes an npn-type bipolar transistor.
  • a mesa-shaped emitter region of the transistor is present on top of a layered base region of the transistor, and a collector region of the transistor is present there under.
  • the junction between the base region and the collector region is surrounded by an electrically insulating region which is buried under the base region and which forms a local constriction of the semiconductor body.
  • a drawback of this known device is that it does not lend itself, or least not very well, for further and further lateral miniaturization.
  • the possible integration density of the known transistor is limited in this manner, but in addition to that the properties of the transistor, such as the high frequency behavior, are capable of improvement yet.
  • An example of a very high frequency application is a car radar system.
  • a device of the kind referred to in the introduction is characterized in that a part of the semiconductor body that is formed above the buried electrically insulating region is monocrystalline.
  • the invention is in the first place based on the perception that in the known device, in which the base region is formed by epitaxy, parts thereof are formed on top of the electrically insulating region, thus burying said region. The parts thus formed are poly crystalline, whilst an adjacent part - above the collector region - is monocrystalline.
  • the invention is furthermore based on the perception that the thus resulting transition between monocrystalline silicon and polycrystalline silicon renders lateral miniaturization of the transistor in the known device difficult or even impossible.
  • the device according to the invention can be designed to have very small lateral dimensions and to exhibit an excellent high frequency behavior, therefore.
  • the invention is based on the surprising perception that when a manufacturing method according to the invention is used, the part of the semiconductor body that is present above the buried electrically insulating region can be made monocrystalline in spite of being formed by epitaxy.
  • this is achieved by first forming an SiGe region at the location of the buried electrically insulating region, on top of which region part of the semiconductor body is deposited by epitaxy. Providing the SiGe is not too high in combination with a thickness thereof that remains within bounds, the aforesaid epitaxy leads to a monocrystalline deposition. Following that - seen in projection from the outside to the inside - part of the SiGe region is removed by selective etching, after which a buried electrically insulating region is formed in the cavity thus created.
  • the base region is provided with at least one electrical connection positioned above the buried electrically insulating region. Because of the fact that the base region is now monocrystalline at that location, a reduction of the lateral dimensions is possible, whilst the resistance of the base region can be very low.
  • the constriction of the semiconductor body is located in the base region.
  • the SiGe region that is used for the formation of the constriction is also located in the base region.
  • the part of the SiGe region that remains after said formation is very advantageous with regard to the properties of the transistor, such as the speed thereof.
  • the thickness of the second semiconductor region, which has a layered structure is - inter alia in that case - preferably greater on both sides of the third semiconductor region, which is mesa-shaped, than under the third semiconductor region.
  • the base region above the buried electrically insulating region can easily be formed with a greater thickness, for example by selective epitaxy.
  • the semiconductor body comprises a further sunken or buried electrically insulating region which, seen in projection, is spaced from the third semiconductor region by a larger distance than the buried electrically insulating region.
  • a usual insulating region can be used for this purpose, such as an STI
  • the capacitance between the base region and the collector region can be further reduced by forming said further sunken or buried electrically insulating region with a greater thickness than the buried electrically insulating region, which has a positive effect on the high frequency properties. Furthermore, a reduced current spread in the collector region is achieved in this manner.
  • the transistor when the emitter region and the collector region exchange roles in a conventional bipolar transistor, the transistor is called an inverted transistor.
  • the emitter region may be positioned under the base region in a corresponding manner. After all, both regions have relatively small lateral dimensions.
  • the first semiconductor region comprises the collector region and the third semiconductor region comprises the emitter region.
  • the base region, and preferably also the collector region is provided with a double electrical connection on either side of the emitter region.
  • a region of a mixed crystal of silicon and germanium is formed at the location of the buried electrically insulating region that is to be formed, which region is removed by selective etching, after which the cavity thus formed is filled with an electrically insulating material.
  • Air or a gas may be used as the electrically insulating material, but preferably the cavity that has been created is filled with a dielectric, such as silicon dioxide.
  • the part of the semiconductor body above the buried electrically insulating region is formed by epitaxy on top of the region that is formed as a mixed crystal of silicon and germanium to enable removal thereof.
  • the electrical connection(s) of the base region is (are) preferably formed above the buried electrically insulating region.
  • the second semiconductor region is formed with a greater thickness on either side of the third semiconductor region, preferably by selective epitaxy, than under the third semiconductor region.
  • the SiGe region is preferably formed in the form of an SiGe epitaxial layer. If said layer is formed as part of the base region, the remaining part of said SiGe layer will contribute to the properties of the transistor.
  • the thickness of the buried electrically insulating region can be increased by carrying out a further etching step after selective etching of part of the SiGe layer, for example using an etchant of silicon which is selective to SiGe.
  • the advantage of this is that the lateral dimensions of the remaining part of the SiGe layer are not changed by said step.
  • the etching of the SiGe layer itself must take place in time.
  • a lateral etch stop may be incorporated in the SiGe layer, for example by incorporating a lateral pn- junction.
  • Figs. 1-9 are schematic, cross-sectional views perpendicular to the thickness direction of a device according to the invention, showing successive stages of the manufacture thereof by means of a method according to the invention.
  • Figs. 1-9 are schematic, cross-sectional views perpendicular to the thickness direction of a device according to the invention, showing successive stages of the manufacture thereof by means of a method according to the invention.
  • the - at least substantially complete - device 10 (see Fig. 9) of this example comprises a semiconductor body 11 with, in this case, an n-type silicon substrate 12 and a semiconductor layer structure provided thereon and a bipolar transistor.
  • the discrete (in this example) transistor has an n- type emitter region 1, a p-type base region 2 and an n-type collector region 3, which are provided with a first, a second and a third connection conductor 100, 200, 300, respectively.
  • the base region 2 comprises a mixed crystal of silicon and germanium having a germanium content of 20 at.% and, in this example, a doping concentration in the range of 1 x 10 19 at/cm 3 to 1 x 10 20 at/cm 3 .
  • Layered regions 21, 22 are positioned on either side of the base region, seen in the thickness direction, which regions function as transition layers and which have a lower doping concentration, for example in the range of 1 x 10 17 at/cm 3 to 1 x 10 19 at/cm 3 .
  • the emitter region 1 has been formed in the n-type transition layer 22 by outdiffusion.
  • the collector 3 and the emitter 1 comprise silicon in this case.
  • the collector 3 comprises, in this case, the n-type (or intrinsic) transition layer 21 and part of the substrate 12, it may furthermore, unlike the present example, be built up of a lowly doped part, the so- termed drift region, and a highly doped part that is positioned adjacent to the substrate or forms part thereof.
  • the connection conductors 100, 200 of the emitter region 1 and the base region 2 comprise a suicide in this case, for example nickel or cobalt suicide, whilst the connection conductor 300 of the collector region 3 comprises aluminum in this case.
  • the emitter connection region IA comprises a poly crystalline silicon region in this example, and is (electrically) isolated from the base connection region 2A by means of spacers 4.
  • the semiconductor body 11 is provided with a constriction, in this case at the location of the base region 2, which has been formed between electrically insulating regions 26, 27 buried in the semiconductor body.
  • Said electrically insulating regions comprise silicon dioxide in this case, they extend from the side walls of a mesa-shaped part 30 of the semiconductor body 11 in the direction of the base region 2 and have the same thickness as the region 2 in this case.
  • a part of the semiconductor body 11 that is present above the regions 26, 27 is monocrystalline. This makes it possible for the device 10 to have very small lateral dimensions and very good high frequency properties. All this can be achieved by manufacturing the device by means of a method according to the invention. With the known manufacturing method, the aforesaid part of the semiconductor body 11 is polycrystalline or even amorphous.
  • the base connection region 2A comprises a polycrystalline silicon conductive region 2AA in this example, and an underlying further conductive region 2AB, of tantalum nitride in this example, relative to which the polycrystalline silicon region 2AA can be selectively etched.
  • the emitter connection region IA is T-shaped (seen in cross-sectional view) in this example, with the arms of the T extending over an insulating region 5 present on top of the polycrystalline silicon region 2AA.
  • the device 10 comprises partially sunken and partially buried further insulating regions 16, 17, which comprise silicon dioxide in this case and which have a greater thickness and are spaced from the emitter region 1 by a larger distance than the buried electrically insulating regions 26, 27.
  • the lateral dimensions of the device 10 of this example are 1 ⁇ m x 10 ⁇ m.
  • the emitter region 1 has a doping concentration of about 10 20 at/cm 3 and a thickness of about 10 nm.
  • the base region 2 has a thickness of about 20 nm, as have the adjacent transition layers 21, 22.
  • the device 10 of this example is manufactured as follows, for example, by means of a method according to the invention.
  • STI Shallow Trench Isolation
  • An underlying part of the substrate 12 has been left out of the drawing for the sake of simplicity.
  • P-type layers 21, 2 , 22 are first deposited thereon by epitaxy, with the center layer being formed of SiGe and the outer two layers being formed of Si. Doping concentrations and thicknesses are selected as indicated above. Then a further layer structure is provided, for example in another deposition device, which structure comprises, successively, a conductive layer 2AB of tantalum nitride, a polycrystalline, highly doped silicon layer 2AA and an insulating layer 5 of silicon dioxide.
  • sputtering or MOCVD Metal Organic Chemical Vapor Depostion
  • MOCVD Metal Organic Chemical Vapor Depostion
  • CVD Chemical Vapour Deposition
  • an opening 6 is etched in the insulating layer 5 and in the polycrystalline silicon layer 2AA, using a photolithographic mask Ml. This can be done by means of a dry etching process, for example. In said process, the tantalum nitride layer 2AB functions as an etch stop layer. Following that (see Fig. 3) a part of the tantalum nitride layer 2AB defined by
  • Ml is selectively etched away with respect to the silicon layer 22 by means of a further etching process, for example a dry or a wet chemical etching process.
  • spacers 4 are formed in the opening 6, which spacers are built up, in this example, of two thin layers 41, 42 of silicon dioxide and silicon nitride having a thickness of 10 and 50 to 100 nm.
  • the layers are uniformly applied and subsequently the flat portions thereof are removed by means of an anisotropic etching process.
  • the opening 6 is filled with an n-type polycrystalline silicon layer IA.
  • Said layer is formed by means of a CVD process.
  • an emitter region 1 is formed by local overdoping as a result of outdiffusion of the n-type contaminations in the emitter connection region IA in the transition layer 22.
  • the emitter connection region IA is patterned by photolithography and etching whilst retaining the T-shaped cross-section.
  • the width of the T at the base is about 200 nm, and the width of the T at the top is about 500 nm.
  • the highly doped parts 2C of the base region 2 are formed by means of a p-type ion implantation, with the T-shaped connection region IA functioning as a mask. It is noted that in practice a photoresist mask will still be present on the T-shaped mesa at that stage - contrary to what is shown in the drawing - and that in that case said implantation will take place between the manufacturing stages that are shown Fig. 5 and Fig. 6.
  • the photoresist mask protects the emitter connection region IA against the implantation, and on the other hand the metal suicide layers 100, 200 can be formed in one step after removal of said mask. Then the connection conductors 100, 200 are formed, for example, by depositing a metal layer of nickel or cobalt, which is converted into nickel or cobalt suicides 100, 200 by silicization. In this example, the rear side of the substrate 12 is contacted with aluminum, thus forming the connection conductor 300 of the collector region 3.
  • the collector region 3 can also be advantageously contacted with the upper surface of the semiconductor body 11 via a sunken connection region and a connection conductor.
  • a mask M2 in this case of photoresist, is applied to the device 10, after which the semiconductor body 11 is provided with a mesa-shaped part 30 located on the surface, in this case by means of a dry etching process.
  • part of the layer 2 that forms the base region 2 is removed from the side wall of the mesa-shaped part 30 of the semiconductor body 11 by means of a selective - wet or dry - chemical etching process.
  • a cavity 26A, 27A is thereby formed adjacent to the Si-containing layers 21, 22 and to the remaining part of the SiGe layer 2 that forms the base region 2.
  • the cavity thus formed is converted into the buried electrically insulating regions 26, 27 by filling the cavity with an electrically insulating material, silicon dioxide in this case.
  • an electrically insulating material silicon dioxide in this case.
  • the cavity is not very thick, it can also be filled by thermal oxidation at a low temperature.
  • the forming of the mesa-shaped part 30 and the cavity 26A, 27A can to that end be carried out at an earlier stage of the manufacture so as to prevent the connection conductors 100, 200, 300 from being damaged. After a separation technique such as sawing or etching has been carried out, individual devices 10 according to the invention can be obtained.
  • the invention is not limited to the embodiments as discussed herein, as many variations and modifications are possible to those skilled in the art within the scope of the invention.
  • SiGe it is also possible to use other materials which can be selectively etched and on which silicon monocrystalline can be grown.
  • An example of such a material is SiC.
  • silicon may also be provided with contaminations which hardly affect the lattice constant of silicon but which nevertheless enable selective etching.
  • n-type silicon can be selectively etched with respect to p-type silicon, for example, or vice versa.
  • an electrically non-active dopant may influence the etchability of silicon to a sufficient extent.
  • the SiGe layer or an SiGe region can also be formed by implanting germanium in a silicon region.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)

Abstract

L'invention concerne un dispositif (10) à semi-conducteurs formé d'un substrat (12) et d'un corps (11) à semi-conducteurs de silicium comprenant un transistor bipolaire avec un émetteur, une base et un collecteur (1, 2, 3) présentant, respectivement, un premier type de conductivité, un second type de conductivité opposé au premier type de conductivité, et le premier type de conductivité, avec une première zone (3) à semi-conducteurs comprenant le collecteur ou l'émetteur formée dans le corps (11) à semi-conducteurs, sur laquelle est positionnée une deuxième zone (2) à semi-conducteurs comprenant la base, sur laquelle est positionnée une troisième zone (1) à semi-conducteurs comprenant le collecteur ou l'émetteur. Ledit corps (11) à semi-conducteurs présente un étranglement au niveau de l'emplacement de la transition entre la première et la deuxième zone (3, 2) à semi-conducteurs, ledit étranglement étant formé au moyen d'une zone isolante (26, 27) enterrée dans le corps (11) à semi-conducteurs. Selon l'invention, une partie du corps à semi-conducteurs au-dessus de la zone isolante enterrée (26, 27) est monocristalline. Ceci permet une forte miniaturisation latérale du dispositif, et permet d'obtenir un transistor aux excellentes propriétés haute fréquence. On peut obtenir un tel dispositif (10) grâce à un procédé de fabrication de l'invention.
EP06780210A 2005-08-03 2006-07-26 Dispositif a semi-conducteurs et procede de fabrication d'un tel dispositif Withdrawn EP1913630A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP06780210A EP1913630A2 (fr) 2005-08-03 2006-07-26 Dispositif a semi-conducteurs et procede de fabrication d'un tel dispositif

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP05107147 2005-08-03
PCT/IB2006/052559 WO2007015194A2 (fr) 2005-08-03 2006-07-26 Dispositif a semi-conducteurs et procede de fabrication d'un tel dispositif
EP06780210A EP1913630A2 (fr) 2005-08-03 2006-07-26 Dispositif a semi-conducteurs et procede de fabrication d'un tel dispositif

Publications (1)

Publication Number Publication Date
EP1913630A2 true EP1913630A2 (fr) 2008-04-23

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP06780210A Withdrawn EP1913630A2 (fr) 2005-08-03 2006-07-26 Dispositif a semi-conducteurs et procede de fabrication d'un tel dispositif

Country Status (6)

Country Link
US (1) US7932156B2 (fr)
EP (1) EP1913630A2 (fr)
JP (1) JP2009503884A (fr)
CN (1) CN101233604B (fr)
TW (1) TW200715550A (fr)
WO (1) WO2007015194A2 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090065804A1 (en) * 2007-09-10 2009-03-12 International Business Machines Corporation Bipolar transistor with low resistance base contact and method of making the same
CN102129992B (zh) * 2010-01-18 2013-02-13 上海华虹Nec电子有限公司 改善杂质注入型多晶硅发射极杂质浓度分布的方法
EP2581930B1 (fr) 2011-10-11 2014-06-04 Nxp B.V. Procédé de fabrication de transistor bipolaire, transistor bipolaire et circuit intégré
CN102412150B (zh) * 2011-10-24 2013-10-23 上海华虹Nec电子有限公司 锗硅异质结双极晶体管的制造方法
US9437718B1 (en) 2015-05-12 2016-09-06 International Business Machines Corporation Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having a wide band gap emitter/collector which are epitaxially grown
EP3547371A1 (fr) * 2018-03-27 2019-10-02 NXP USA, Inc. Transistor bipolaire et procédé de fabrication d'un transistor bipolaire
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CN101233604B (zh) 2011-10-05
WO2007015194A2 (fr) 2007-02-08
TW200715550A (en) 2007-04-16
US20090174034A1 (en) 2009-07-09
JP2009503884A (ja) 2009-01-29
US7932156B2 (en) 2011-04-26
WO2007015194A3 (fr) 2007-07-19
CN101233604A (zh) 2008-07-30

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