EP1860697A3 - Dispositif semi-conducteur - Google Patents

Dispositif semi-conducteur Download PDF

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Publication number
EP1860697A3
EP1860697A3 EP07008986.7A EP07008986A EP1860697A3 EP 1860697 A3 EP1860697 A3 EP 1860697A3 EP 07008986 A EP07008986 A EP 07008986A EP 1860697 A3 EP1860697 A3 EP 1860697A3
Authority
EP
European Patent Office
Prior art keywords
insulator substrate
sealing material
semiconductor device
external terminals
semiconductor chips
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP07008986.7A
Other languages
German (de)
English (en)
Other versions
EP1860697A2 (fr
Inventor
Hiroki Shiota
Hirotaka Muto
Tetsuo Mizoshiri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of EP1860697A2 publication Critical patent/EP1860697A2/fr
Publication of EP1860697A3 publication Critical patent/EP1860697A3/fr
Withdrawn legal-status Critical Current

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    • H01L23/585Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
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    • H01L23/18Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
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JP5268994B2 (ja) * 2010-05-31 2013-08-21 三菱電機株式会社 半導体モジュールとその製造方法
WO2013047231A1 (fr) * 2011-09-30 2013-04-04 富士電機株式会社 Dispositif à semi-conducteur et son procédé de fabrication
DE102012213916A1 (de) * 2011-11-08 2013-05-08 Robert Bosch Gmbh Elektronikmodul für ein Steuergerät
DE102011089474A1 (de) * 2011-12-21 2013-06-27 Robert Bosch Gmbh Elektronikmodul für ein Fahrzeug
DE112012005746B4 (de) * 2012-01-25 2021-02-18 Mitsubishi Electric Corporation Leistungshalbleitereinrichtung
JP5859906B2 (ja) * 2012-04-20 2016-02-16 三菱電機株式会社 半導体装置および半導体装置の製造方法
JP5930070B2 (ja) * 2012-12-28 2016-06-08 富士電機株式会社 半導体装置
US9478473B2 (en) * 2013-05-21 2016-10-25 Globalfoundries Inc. Fabricating a microelectronics lid using sol-gel processing
US20150001700A1 (en) * 2013-06-28 2015-01-01 Infineon Technologies Ag Power Modules with Parylene Coating
WO2018096656A1 (fr) * 2016-11-25 2018-05-31 三菱電機株式会社 Dispositif à semiconducteur
US10177057B2 (en) 2016-12-15 2019-01-08 Infineon Technologies Ag Power semiconductor modules with protective coating
JP6395173B1 (ja) * 2017-03-29 2018-09-26 三菱電機株式会社 パワー半導体モジュール
CN110447098B (zh) 2017-03-29 2022-11-25 三菱电机株式会社 功率半导体模块
JP6826665B2 (ja) * 2018-12-27 2021-02-03 三菱電機株式会社 半導体装置、半導体装置の製造方法及び電力変換装置

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EP1860697A2 (fr) 2007-11-28
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US7868436B2 (en) 2011-01-11
US20070284719A1 (en) 2007-12-13

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