Classifications

• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
  • B25B—TOOLS OR BENCH DEVICES NOT OTHERWISE PROVIDED FOR, FOR FASTENING, CONNECTING, DISENGAGING OR HOLDING
  • B25B11/00—Work holders not covered by any preceding group in the subclass, e.g. magnetic work holders, vacuum work holders
  • B25B11/005—Vacuum work holders
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B82—NANOTECHNOLOGY
  • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
  • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B82—NANOTECHNOLOGY
  • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
  • B82Y40/00—Manufacture or treatment of nanostructures
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/70—Microphotolithographic exposure; Apparatus therefor
  • G03F7/70691—Handling of masks or workpieces

Definitions

• the method includes , inter- alia, applying a separation force to the template to separate the template from the layer,- and facilitating localized deformation in the substrate to reduce the magnitude of separation force required to achieve separation. It is believed that by reducing the separation forces , damage to the recorded layer may be minimized. It is believed that the present chucking system reduces the separation forces required and results in minimization of damage to the recorded layer during separation.
• Fig. 13 is a cross-sectional view of a template in contact with an imprinting layer, disposed upon a substrate, wherein the substrate is subj ected to a pushi_ng force;
• wafer chuck 122 may be employed to vary the magnitude and the direction of the straining force F c across substrate 14 . Furthermore, the following embodiments may be employed in step and repeat processes , wherein an exemplary step and repeat process is disclosed in United States published patent application number 2004/0008334 filed as United patent application number 10/194 , 414 , assigned to assignee of the present invention and incorporated herein by reference . [0043] To that end, wafer chuck 122 may be configured to provide a plurality of discrete vacuum sections 30 A -30 z .
• apertures 50 are in fluid communication with a common passageway 53 and apertures 52 are in fluid communication with a common passageway 55.
• the straining force F c generated by fluid flows through one or more of the plurality of spaced-apart apertures 50 and 52.
• the portion of the plurality o f spaced-apart apertures 50 and 52 may have fluid passing thereth-orough at a first flow rate, 0 seem or greater.
• Were separation force F 3 present fluid may pass through apertures 50 and 52 at a flow rate that differs from the first flow rate .
• the flow rate of fluid passing through apertures 50 and 52 may vary in response to the presence of separation force F 3 .

Applications Claiming Priority (4)

Publications (2)

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Family Applications (1)

Country Status (4)

Cited By (1)

Families Citing this family (8)

Citations (3)

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• 2006
  • 2006-01-12 KR KR1020077019969A patent/KR101254042B1/ko active IP Right Grant
  • 2006-01-12 WO PCT/US2006/001160 patent/WO2006083520A2/en active Application Filing
  • 2006-01-12 WO PCT/US2006/001145 patent/WO2006083518A2/en active Application Filing
  • 2006-01-12 WO PCT/US2006/001151 patent/WO2006083519A2/en active Application Filing
  • 2006-01-12 EP EP06718240A patent/EP1843884A4/de active Pending
  • 2006-01-19 TW TW95102091A patent/TWI291212B/zh not_active IP Right Cessation
  • 2006-01-19 TW TW95102094A patent/TWI277504B/zh active

Patent Citations (3)

Non-Patent Citations (1)

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