EP1799446A2 - Systeme d'amincissement de pieces de semi-conducteur - Google Patents

Systeme d'amincissement de pieces de semi-conducteur

Info

Publication number
EP1799446A2
EP1799446A2 EP05789099A EP05789099A EP1799446A2 EP 1799446 A2 EP1799446 A2 EP 1799446A2 EP 05789099 A EP05789099 A EP 05789099A EP 05789099 A EP05789099 A EP 05789099A EP 1799446 A2 EP1799446 A2 EP 1799446A2
Authority
EP
European Patent Office
Prior art keywords
workpiece
chamber
workpieces
chuck
back side
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP05789099A
Other languages
German (de)
English (en)
Other versions
EP1799446A4 (fr
Inventor
Kert L. Dolechek
Raymon F. Thompson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Semitool Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/922,762 external-priority patent/US20060040111A1/en
Priority claimed from US10/923,436 external-priority patent/US20060046499A1/en
Priority claimed from US10/923,132 external-priority patent/US7354649B2/en
Priority claimed from US10/923,363 external-priority patent/US7288489B2/en
Application filed by Semitool Inc filed Critical Semitool Inc
Publication of EP1799446A2 publication Critical patent/EP1799446A2/fr
Publication of EP1799446A4 publication Critical patent/EP1799446A4/fr
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02035—Shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Definitions

  • the invention relates to a process and apparatus for use with workpieces, such as semiconductor wafers, flat panel displays, rigid disk or optical media, thin film heads or other workpieces formed from a substrate on which microelectronic circuits, data storage elements or layers, or micro-mechanical elements may be formed.
  • workpieces such as semiconductor wafers, flat panel displays, rigid disk or optical media, thin film heads or other workpieces formed from a substrate on which microelectronic circuits, data storage elements or layers, or micro-mechanical elements may be formed.
  • workpieces such as semiconductor wafers, flat panel displays, rigid disk or optical media, thin film heads or other workpieces formed from a substrate on which microelectronic circuits, data storage elements or layers, or micro-mechanical elements may be formed.
  • ICD integrated circuit devices
  • advanced packaging of semiconductor devices e.g., stacked dies or "flip-chips”
  • heat dissipation becomes increasingly important. This is in large part due to the fact that ICDs operated at extremely high speeds tend to generate large amounts of heat. That heat must be removed from the ICD to prevent device failure due to heat stress and to prevent degradation of the frequency response due to a decrease in carrier mobility.
  • One way to enhance thermal transfer away from the ICD, thereby mitigating any deleterious temperature effects, is by thinning the semiconductor wafer from which the ICD is fabricated.
  • Other reasons for thinning the semiconductor wafer include: optimization of signal transmission characteristics; formation of via holes in the die; and minimization of the effects of thermal coefficient of expansion between an individual semiconductor device and a package.
  • Wafer thinning techniques have been developed in response to this ever increasing demand for smaller, higher performance ICDs.
  • semiconductor devices are thinned while the devices are in wafer form. Wafer thicknesses vary depending on the size of the wafer. For example, the thickness of a 150 mm diameter silicon semiconductor wafer is approximately 650 microns, while wafers having a diameter of 200 or 300 mm are approximately 725 microns thick.
  • Mechanical grinding of the back side of a semiconductor is one standard method of thinning wafers. Such thinning is referred to as "back grinding.”
  • the back grinding process employs methods to protect the front side or device side of the semiconductor wafer. Conventional methods of protection of the device side of the semiconductor wafer include application of a protective tape or a photoresist layer to the device side of the wafer. The back side of the wafer is then ground until the wafer reaches a desired thickness.
  • a wet chemical etch process to a semiconductor wafer after it has been thinned by back grinding.
  • This process is commonly referred to as stress relief etching, chemical thinning, chemical etching, or chemical polishing.
  • the aforementioned process relieves the induced stress in the wafer, removes grind marks from the back side of the wafer and results in a relatively uniform wafer thickness.
  • chemical etching after back grinding thins the semiconductor wafer beyond conventional back grinding capabilities. For example, utilizing a wet chemical etch process after back grinding allows standard 200 and 300 mm semiconductor wafers to be thinned to 100 microns or less.
  • Wet chemical etching typically includes exposing the back side of the wafer to an oxidizing/reducing agent (e.g., HF, HNO 3 , H 3 PO 4 , H 2 SO 4 ) or alternatively to a caustic solution (e.g., KOH, NaOH, H 2 O 2 ).
  • an oxidizing/reducing agent e.g., HF, HNO 3 , H 3 PO 4 , H 2 SO 4
  • a caustic solution e.g., KOH, NaOH, H 2 O 2 .
  • thinned semiconductor wafers are prone to warping and bowing. And because thinned semiconductor wafers can be extremely brittle, they are also prone to breakage when handled during further processing. Thinned semiconductor wafers (e.g., below 250 microns) also present complications in automated wafer handling because, in general, existing handling equipment has been designed to accommodate standard wafer thicknesses (e.g., 650 microns for 150 mm wafer and 725 microns for 200 and 300 mm wafers).
  • standard wafer thicknesses e.g., 650 microns for 150 mm wafer and 725 microns for 200 and 300 mm wafers.
  • the present invention provides a system, method and apparatus for use in processing semiconductor wafers.
  • the new system and apparatus allows for the production of thinner wafers that at the same time remain strong and resistant to bowing and warping. As a result, the wafers produced by the present process are less susceptible to breakage.
  • the process and equipment of the present invention also offer an improved product structure for handling thinned wafers, while reducing the number of processing steps. This results in, among other things, improved yields and improved process efficiency.
  • the present invention provides a chuck for receiving and supporting a semiconductor workpiece having a device side, a bevel and a back side.
  • the chuck has a body for supporting the workpiece, a retainer removeably attached to the body and adapted to cover a peripheral portion of the back side of the workpiece, and at least one member for creating a seal between the retainer and the back side of the workpiece. Due to its configuration, the chuck permits an interior region of the back side of the workpiece to be exposed, while protecting the peripheral portion of the back side of the workpiece.
  • the workpiece is then thinned via a wet etching process. The result is a processed semiconductor workpiece that has a thinned main body (e.g., less than approximately 125 microns) and a thick rim (e.g., in a range of approximately 600 to 725 microns).
  • the present invention provides a semiconductor workpiece having a main body and a rim comprised of semiconductor material.
  • the main body is integrally connected to the rim and has a thickness less than approximately 50% of the rim thickness.
  • the relatively thick rim provides strength to the workpiece, preventing the main body from bowing and warping.
  • the main body of the semiconductor workpiece can be thinned to a thickness less than 300 microns, preferably less than 125 microns, more preferably less than 100 microns, especially less than 50 microns and even less than 25 microns.
  • the structural configuration of thinned semiconductor workpieces of the present invention meet the industry demand for thinned ICDs necessary in today's state of the art electronics and advanced packaging techniques, while at the same time, reducing the risk of breakage due to the fragile state of the thinned workpiece.
  • the present invention also provides several processes for thinning a semiconductor workpiece.
  • the process includes the steps of placing the semiconductor workpiece into a chuck adapted to cover a peripheral portion of the back side of the workpiece, leaving approximately 95% of the back side surface of the workpiece exposed.
  • the semiconductor workpiece is then thinned via a wet chemical etching process wherein the back side of the workpiece is exposed to an oxidizing agent (e.g., HF, HNO 3 , H 3 PO 4 , H 2 SO 4 ) or alternatively to a caustic solution (e.g., KOH, NaOH, H 2 O 2 ).
  • an oxidizing agent e.g., HF, HNO 3 , H 3 PO 4 , H 2 SO 4
  • a caustic solution e.g., KOH, NaOH, H 2 O 2
  • a rim is formed at the periphery of the workpiece, or as it is commonly referred to in the industry, the "exclusion zone.”
  • the rim has a thickness approximately equal to the thickness of the workpiece prior to the wet chemical etch step (e.g., in a range of 600 to 725 microns).
  • the remainder of the workpiece i.e., the thinned main body
  • has a thickness less than 50% of the rim thickness e.g., less than 300 microns, preferably less than 125 microns, more preferably less than 100 microns, especially less than 50 microns and even less than 25 microns).
  • a process for thinning a batch of semiconductor workpieces includes the step of placing the semiconductor workpieces into a chuck body so that a back side of the workpieces is exposed. Inserting a batch of the workpieces into the carrier assembly. Loading the carrier assembly into a rotor assembly such that the semiconductor pieces are positioned at an incline. Rotating the rotor assembly, which subsequently provides rotational motion to the carrier assembly and the workpieces therein, and spraying a process fluid on the exposed back sides of the workpieces.
  • the present invention also provides a system that includes a process chamber that allows for batch wet chemical thinning of semiconductor workpieces down to less than 125 microns.
  • the process chamber comprises a chamber body having a first end, an outer wall, and an opening at the first end leading into a cavity.
  • the process chamber is supported at an incline within the processing machine, and the semiconductor workpieces within the process chamber are similarly supported at an incline therein.
  • a door assembly is provided adjacent the first end of the chamber body. The door assembly has a door that selectively closes the opening of the chamber body.
  • the process chamber also has a spray assembly having a nozzle to spray a process fluid into the cavity of the chamber body and onto the exposed portions of the semiconductor workpieces therein.
  • the spray assembly has a dual inlet/outlet mechanism that introduces fluid into the process chamber from opposing directions.
  • the process chamber has an exhaust vent and a exit port or drain.
  • the exhaust vent exhausts gases and vapors from the cavity of the processing chamber.
  • the drain removes excess and used process fluid from the cavity of the chamber body of the process chamber.
  • the drain may be connected to a recirculation system to deliver the excess and used process fluid from the process chamber to a delivery tank.
  • the system includes a carrier assembly to retain a plurality of the workpieces.
  • the carrier assembly is positioned in the cavity of the process chamber, and rotates within the process chamber to allow for better coverage for the sprayed process fluid on the workpieces.
  • the carrier assembly has a plurality of positioning members about a length of its body.
  • the positioning members are used to retain the semiconductor workpieces in a specific location in the carrier assembly, and to provide a gap between adjacent semiconductor workpieces. Further, because of the geometry of the positioning members of the carrier assembly, the workpieces in the carrier assembly generally rotate both with the carrier assembly, and somewhat independently of the rotation of the carrier assembly.
  • the system includes a rotor assembly.
  • the rotor assembly is positioned within the cavity of the process chamber, and the carrier assembly is generally positioned within a cavity of the rotor assembly.
  • a motor associated with the process chamber drives the rotor assembly to rotate the rotor assembly within the cavity of the chamber body.
  • the rotor assembly subsequently provides rotational motion to the carrier assembly and the semiconductor workpieces therein.
  • FIG. IA is a perspective view of a chuck according to the present invention with a semiconductor workpiece secured therein prior to thinning.
  • HG. IB is a cross-sectional view of the chuck and workpiece shown in FIG. IA.
  • FIG. 1C is a partial enlarged view of the chuck and workpiece shown in FIG. IB, demonstrating the cooperation between the chuck and the workpiece.
  • FIG. ID is an exploded cross-sectional view of the chuck and workpiece shown in
  • FIG. IE is a partial enlarged view of the chuck and workpiece section identified as
  • FIG. 2A is a cross-sectional view of another embodiment of a chuck according to the present invention with a workpiece secured therein prior to thinning.
  • FIG. 2B is a partial enlarged view of the chuck and workpiece shown in FIG. 2A, demonstrating the cooperation between the chuck and the workpiece.
  • FIG. 3A is a cross-sectional view of yet another embodiment of a chuck according to the present invention with a workpiece secured therein prior to thinning.
  • FIG. 3B is a partial enlarged view of the chuck and workpiece shown in FIG. 3A, demonstrating the cooperation between the chuck and the workpiece.
  • FIG. 4A is a cross-sectional view of another embodiment of a chuck according to the present invention with a workpiece secured therein prior to thinning.
  • FIG. 4B is a partial enlarged view of the chuck and workpiece shown in FIG. 4B, demonstrating the cooperation between the chuck and the workpiece.
  • FIG. 5A is a cross-sectional view of another embodiment of a chuck according to the present invention with a workpiece secured therein prior to thinning.
  • FIG. 5B is a partial enlarged view of the chuck and workpiece shown in FIG. 5A, demonstrating the cooperation between the chuck and the workpiece.
  • FIG. 6A is a cross-sectional view of yet another embodiment of a chuck according to the present invention with a workpiece secured therein prior to thinning.
  • FIG. 6B is a partial enlarged view of the chuck and workpiece shown in FIG. 6A, demonstrating the cooperation between the chuck and the workpiece.
  • HG. 7A is a cross-sectional view of an embodiment of a chuck according to the present invention with a workpiece secured therein prior to thinning.
  • HG. 7B is a partial enlarged view of the chuck and workpiece shown in FIG. 7A, demonstrating the cooperation between the chuck and the workpiece.
  • FIGS. 8 and 9 are flow diagrams depicting aspects of process flows in accordance with the present invention.
  • HG. 10 is a perspective view of a semiconductor workpiece thinned according to a process of the present invention.
  • FIG. 11 is a cross-sectional view of the thinned semiconductor workpiece shown in FIG. 10.
  • FIG. 12 is a perspective view of a tool for treating semiconductor workpieces
  • FIG. 13 is a perspective view of the tool of FIG. 12, with a panel removed to disclose an inclined work station in the tool;
  • FIG. 14 is an exploded perspective view of one embodiment of a process chamber used in a work station of the tool of FIG. 12;
  • FIG. 15 is a perspective view of one embodiment of a carrier assembly for use with a process chamber
  • FIG. 16 is a side cross-sectional elevation view of the carrier assembly taken about line A-A of FIG. 15;
  • FIG. 17 is a perspective view of another embodiment of a carrier assembly for use with the process chamber of FIG. 14;
  • FIG. 18 is a front perspective view of the rotor assembly used in the processing system for the workpieces
  • FIG. 19 is an exploded rear perspective view of the rotor assembly of FIG. 18;
  • FIG. 20 is a front perspective view of the process chamber of FIG. 14;
  • FIG. 21 is a rear perspective view of the process chamber of FIG. 14;
  • FIG. 22 is a rear cross-sectional view of the process chamber of FIG. 21;
  • FIG. 23 is a side cross-sectional view, through the vent and drain assemblies, of the process chamber of FIG. 21;
  • FIG. 24 is a side cross-sectional view, through the spray assembly, of the process chamber of FIG. 21;
  • FIG. 25 is a flow diagram illustrating a one process for thinning a workpiece in a process chamber
  • HG. 26 is a flow diagram illustrating one process fluid delivery schematic.
  • FIG. 27 is a schematic of a tool incorporating the process chamber of FIG. 14 DETAILED DESCRIPTION
  • the chuck 10 for supporting a semiconductor workpiece 50 during processing in accordance with one embodiment of the present invention.
  • the chuck 10 is comprised of a supporting body 12, a retainer 14 and a sealing members 16, 24.
  • the retainer 14 has two grooves or recesses 18.
  • the sealing members 16, 24 are housed in the annular grooves 18, respectively.
  • the retainer 14 is preferably in the form of a ring and is removeably attached to the supporting body 12.
  • the workpiece 50 which has a device side 51, a bevel (i.e., peripheral edge) 52 and a back side 53, is placed onto a supporting surface 18 of the supporting body 12 of chuck 50, device side 51 down.
  • the retainer 14 is then attached to the outer periphery of the supporting body 12. As shown specifically in FIG. 1C, when the retainer 14 is engaged to the supporting body 12, the retainer 14 wraps around the outer end of the supporting body 12 and covers a peripheral portion of the back side 53 of the workpiece 50, securing the workpiece 50 in the chuck 10.
  • the retainer 14 When engaged, preferably the retainer 14 covers only a small peripheral portion of the back side 53 of the workpiece 50, leaving a majority of the back side 53 of the workpiece 50 exposed.
  • the back side 53 surface area covered by the retainer 14 extends inwardly from the bevel 52 for about a distance of approximately 1-10 mm, more preferably between about 1-5 mm, and especially between about 2-4 mm.
  • Preferably, at least 95% (or even 97% or 99%) of the back side 53 surface area of the workpiece 50 is left exposed.
  • the exposed portion of the back side 53 of the workpiece 50 is then subjected to a process fluid and thinned to a desired thickness.
  • the periphery of the back side 53 of the workpiece 50 remains in substantially its same pre- thinning form, configuration and thickness.
  • the semiconductor material remaining at the periphery of the workpiece 50 after thinning is referred to as a rim. It is the rim that imparts strength to the thinned workpiece 50 and permits automated handling equipment to handle the thinned semiconductor workpieces 50 processed according to the present invention.
  • the retainer 14 in order to facilitate attachment of the retainer 14 to the supporting body 12, the retainer 14 has an engagement member 20 that cooperates with a recess 22 formed in the supporting body 12. In this manner, a simple mechanical snap connection between the retainer 14 and the supporting body 12 is achieved.
  • the present invention includes a configuration where the engagement member 20 extends from the supporting body 12 and cooperates with a recess 22 formed in the retainer 14 to removeably connect the retainer 14 and supporting body 12. In either configuration, preferably the engagement member 20 and the recess 22 are positioned between the first and second sealing member 16, 24.
  • the retainer 14 has an outer peripheral end 30 with an angled surface 32.
  • the angled surface 32 of the outer peripheral end 30 of the retainer 14 mates with an angled surface 34 at an outer peripheral end of the supporting body 12 to form a notch 36.
  • the notch 36 accepts a tool (not shown) and facilitates removal of the retainer 14 from the supporting body 12.
  • the supporting body 12 has a lip or step 26 formed circumferentially therein. The lip 26 acts to register or guide the workpiece 50 as it is loaded into the chuck 10. When properly aligned, the workpiece 50 will rest entirely on the supporting surface 28 of the supporting body 12.
  • the chuck 10 can be any shape (e.g., square, rectangular, circular, etc), as shown in FIGS. IA- IE, in a preferred embodiment the chuck is disk-shaped and will have a diameter slightly larger than the diameter of the workpiece 50 to be processed.
  • FIGS. 2A-2B there is shown an alternative embodiment of a chuck 10 according to the present invention.
  • the chuck 10 includes a supporting body 12 and a retainer 14.
  • the retainer 14 has first and second sealing members 16, 24 disposed within annular grooves 18, 38.
  • the mechanical attaching mechanism in the embodiment illustrated in FIGS 2A-2B is slightly different than the mechanism shown in FIGS. IA- IE.
  • An engagement member 20 extends from the outer periphery of the supporting body 12.
  • the retainer 14 in turn, has a recess 22 that cooperates with the engagement member 20 of the supporting body 12 to provide a simple snap engagement that attaches the retainer 14 to the supporting body 12.
  • the retainer 14 has a plurality of rinse holes 40 for allowing processing fluid to escape from cavities formed in the chuck 10.
  • a lower portion 42 of the retainer 14 which creates the mechanical snap connection with the engaging member 20 forms an annular recess 44 with a mating lower portion 46 of the supporting body 12.
  • a tool (not shown) can be inserted into the annular recess 44 so that the retainer 14 can be simply popped off the chuck 10 supporting body 12 after processing is completed.
  • sealing member 16 creates a flexible interface and seal between the workpiece 50 and the retainer 14 to prevent process fluid from accessing the device side 51 and bevel 52 of the workpiece 50.
  • This flexible interface also relieves some of the stress that is exerted on the workpiece 50 during assembly and disassembly of the chuck 10.
  • Sealing member 24 creates a flexible interface between the retainer 14 and the supporting body 12 and also helps relieve some of the stress that is exerted on the workpiece 50 during assembly and disassembly of the chuck 10.
  • FIGS. 3A-3B through 7A-7B there is shown various chuck 10 designs having only a single sealing member 16.
  • FIGS. 3A-3B illustrate a chuck 10 having a retainer 14, supporting body 12 and a engagement mechanism similar to the engagement mechanism shown in FIGS. 2A-2B and described above.
  • the retainer 14, however, has only a single annular groove 18 which is adapted to house sealing member 16.
  • the annular groove 18 is V-shaped and receives a square-shaped compressible sealing member 16.
  • the square-shaped sealing member 16 has semi ⁇ circular extensions projecting from each corner to ensure an adequate fit in groove 18.
  • FIGS. 4A-4B and 5A-5B show chucks 10 having an engagement ring 48 attached circumferentially to the bottom outer periphery of the supporting body 12.
  • the engagement ring 48 extends radially outwardly from the supporting body 12, creating a stepped- relationship between the supporting body 12 and engagement ring 48, and forming engagement member 20.
  • the retainer 14 has a lower portion 42 with a U-shaped recess 22 formed therein.
  • the U-shaped recess 22 receives the engagement member 20.
  • the lower portion 42 of the retainer 14 has an extension 49 that wraps around the engagement member 20 to form a mechanical snap connection between the retainer 14 and the engagement ring 46 of the supporting body 12.
  • the retainer 14 has a two-step annular groove 18 which receives a sealing member 16 having a top part with one width for insertion into one- step of the annular groove 18, and a bottom part with a second width for insertion into the second step of the annular groove 18.
  • the retainer 14 has a single V-shaped annular groove 18 for housing the sealing member 16, which in this embodiment is a compressible O-ring.
  • FIGS. 6A-6B illustrate another preferred embodiment of a chuck 10 according to the present invention.
  • the lower portion 42 of the retainer 14 has an inner side wall 60 with a convex protrusion 62 extending outwardly therefrom.
  • the supporting body 12 has an end wall 64 with a concave recess 66 for accepting the convex protrusion 62 of the inner side wall 60 of the lower portion 42 of the retainer 14. In this manner, the retainer 14 engages the supporting body 12 and secures the workpiece 50 on the supporting surface 28 of the chuck 10.
  • sealing member 16 creates a flexible interface between the workpiece 50 and the supporting body 12 to prevent process fluid from interacting with the device side 51 and bevel 52 of the workpiece 50, and to relieve stress exerted on the workpiece during the assembly/disassembly process.
  • FIGS. 7A-7B there is shown a preferred embodiment of a chuck 10, which combines the retainer 14 and sealing member 16 of the prior embodiments.
  • retainer 14 is a single-component, compressible annular ring with an annular groove 18 running circumferentially through the middle of the retainer 14.
  • the supporting body 12 has an outer end 13, which is inserted into the annular groove 18 in the retainer 14.
  • the retainer 14 remains engaged to the supporting body 12 as a result of a compression force exerted by the retainer 14 onto the supporting body 12 and the workpiece 50.
  • an outer peripheral portion of the workpiece 50 e.g., the exclusion zone
  • retainer 14 creates a seal with the back side 53 of the workpiece 50, preventing process fluid from accessing the bevel 52 and device side 51 of the workpiece 50 during processing.
  • Suitable materials for use in the chuck 10 embodiments according to the present invention will now be discussed.
  • the chuck 10 can be made from a number of different polymer materials that are stable and highly chemically resistant.
  • the supporting body 12 comprises polytetrafluoroethylene and the retainer 14 preferably comprises a fluoropolymer such as poly vinylidene fluoride sold by Atofina Chemicals under the KYNAR tradename.
  • the retainer 14 is preferably formed from a material having a Durometer hardness less than that of a fluoropolymer, but greater than the elastomeric materials discussed below with respect to the sealing member. That is, a material compressible enough to form a seal with the workpiece 50, but stiff enough to provide structure to the retainer 14 for receiving the supporting body 12.
  • the supporting body 12 is comprised of a material having a Durometer hardness greater than the Durometer hardness of the material from which the retainer 14 is formed.
  • the sealing members 16, 24 are preferably shaped like an "O-ring," but it is contemplated that other shapes can be used as well (e.g., as shown in HGS. 3A-3B and 4A-4B).
  • the sealing members 16, 24 are preferably formed from a compressible material having a Durometer hardness equal to or greater than 50.
  • suitable elastomeric materials include: a perfluoroelastomer sold by DuPont under the tradename Kalrez; a perfluoroelastomer sold by Greene, Tweed & Co.
  • FIG. 8 illustrates one embodiment of a process that may be implemented when the chuck 10 and workpiece 50, described above, are used to thin the back side 53 of the workpiece 50.
  • a workpiece 50 is provided having a device side 51, a bevel 52 and a back side 53.
  • the back side 53 of the workpiece 50 will have a given surface area depending on its dimensions.
  • the workpiece 50 has a given thickness.
  • the workpiece 50 is placed onto the supporting surface 28 of chuck 10 with the device side 51 immediately adjacent to the supporting body 12 of the chuck 10.
  • the retainer 14 is attached to the supporting body 12 so that a peripheral portion (e.g., the exclusion zone of the workpiece 50) of the back side 53 of the workpiece 50 is covered.
  • the workpiece 50 is secured to the chuck 10.
  • a majority (and preferably at least 95%, more preferably at least 97% and especially at least 99%) of the back side 53 surface area is exposed, while a small peripheral portion of the back side 53 of the workpiece 50 is covered.
  • the workpiece 50 is then thinned to a desired thickness at step 230 by applying a process fluid to the exposed back side 53 of the workpiece 50. Due to the overlapping configuration of the retainer 14, by thinning the exposed back side 53 of the workpiece, at step 240, a rim and a main body is formed in the workpiece 50.
  • the rim is formed at the outer periphery of the workpiece 50 and has a thickness, RT and the main body of the workpiece 50 has a thickness, MBT. In the preferred embodiment of FIG. 8, the MBT is less than approximately 50% of the RT.
  • a desired MBT is preferably less than approximately 40% of the RT; more preferably less than approximately 30% of the RT; especially less than approximately 20% of the RT; and even less than approximately 10% of the RT.
  • the RT should be substantially the same as the workpiece 50 thickness prior to the thinning process.
  • the RT after thinning will be about 725 microns.
  • the RT of a conventional 150 mm workpiece after thinning will be about 650 microns.
  • a workpiece 50 having a thickness of anywhere from 150 - 725 microns can be thinned according to the present invention to create a workpiece 50 with a rim having a RT in a range of substantially the same thickness as the workpiece 50 (i.e., about 150 - 725 microns, even about 600-725, or even about 300-725) and a main body having a MBT in a range of about 25 - 300 microns, preferably in a range of about 100-125 microns, more preferably in a range of about 50-100 microns, especially in a range of about 25-50 microns.
  • a workpiece 50 having a thickness of anywhere from 150 - 725 microns can be thinned according to the present invention to create a workpiece 50 with a rim having a RT in a range of substantially the same thickness as the workpiece 50 (i.e., about 150 - 725 microns, even about 600-725, or even about 300-725) and
  • a workpiece 50 having a thickness, WPT is provided.
  • the workpiece 50 has a device side 51, a bevel 52 and a back side 53.
  • the workpiece 50 is placed onto the chuck 10 with the device side 51 immediately adjacent to the supporting body 12 of the chuck 10 at step 310.
  • the retainer 14 is attached to the supporting body 12 so that a peripheral portion of the back side 53 of the workpiece 50 is covered.
  • the workpiece 50 is secured to the chuck 10.
  • the chuck 10 and workpiece 50 are placed into a process chamber.
  • the process chamber may be manual or automated and is preferably within a spray acid tool platform like those available from Semitool, Inc., of Kalispell, Montana.
  • a process fluid is applied to the exposed back side 53 of the workpiece 50 at step 340.
  • the thinning process of step 340 preferably comprises a conventional wet chemical etch process or a polishing process.
  • the process fluid preferably consists of one, or a combination of: deionized water, hydrogen peroxide, ozone, potassium hydroxide, sodium hydroxide, hydrofluoric acid, nitric acid, sulfuric acid, acidic acid and phosphoric acid.
  • deionized water hydrogen peroxide
  • ozone potassium hydroxide
  • sodium hydroxide sodium hydroxide
  • hydrofluoric acid sodium hydroxide
  • nitric acid sulfuric acid
  • sulfuric acid acidic acid and phosphoric acid
  • a number of other acidic and basic solutions may also be used, depending on the particular surface to be treated and the material that is to be removed.
  • the process fluid can be applied to the workpiece 50 in any conventional manner. In one preferred embodiment, however, the process fluid is sprayed through a nozzle or a plurality of nozzles onto the back side 53 of the workpiece 50. In another preferred embodiment, the chuck 10 and workpiece 50 are immersed into a volume of process fluid, or sequentially into a plurality of volumes of the same process fluid (at different concentrations or temperatures) or different process fluids.
  • the process fluid will have a desired concentration, a temperature and a flow rate.
  • the process fluid can be applied to the exposed back side 53 of the workpiece 50 at a first etch rate, and then subsequently at a second etch rate.
  • the first etch rate is greater than the second etch rate. That is, semiconductor material is etched away quickly at first, and then more slowly as the thickness of the workpiece 50 approaches the desired thickness.
  • the thinning process forms a rim 70 and a main body 72 in the workpiece 50.
  • the thinning process is carried out until the main body 72 reaches a desired thickness, MBT.
  • the MBT is less than 50% of the WPT, more preferably less than 40% of the WPT, even more preferred less than 30% of the WPT , especially less than 20% of the WPT and especially preferred less than 10% of the WPT.
  • the thinned workpiece 50 is rinsed and dried.
  • the workpiece may be sprayed with a flow of deionized water, nitrogen or phosphoric acid during the rinsing step and may then be subject to any one or more known drying techniques thereafter.
  • the workpiece 50 is then removed from the chuck (step 370) and the thinned workpiece 50 is diced into a plurality of dies (step 380).
  • Thinning of semiconductor workpieces 50 can be carried out on a single workpiece 50, or on a plurality of workpieces 50 simultaneously, according to the present invention.
  • the carrier is loaded into a process vessel and a process fluid is applied to the exposed back sides 53 of the plurality of workpieces 50.
  • a process fluid is applied to the exposed back sides 53 of the plurality of workpieces 50.
  • the process vessel can be a stand alone tool, or one of a plurality of workstations making up a larger, workpiece 50 processing system.
  • the tool 410 preferably includes a cabinet 414 that houses a first processing module 416 and a second processing module 418, however, it is understood that additional work-in-progress pods or modules may also be provided in the tool 410.
  • the first processing module 416 is typically a process chamber to thin the semiconductor workpieces 412, such as the process chamber 420 shown in FIG. 14, and the second processing module 418 is typically a drying and rinsing chamber 422 to dry and rinse the workpieces 412 after they have been thinned.
  • the tool 410 also has electronic control area 425, which is associated with such equipment as a control panel 424, a display 426, and a processor for controlling and monitoring operation of the system. Additionally, the tool 410 has another module 427 which houses the work in process pods. Other features and components of the system will be described in detail herein.
  • each workpiece 412 is mounted in a separate chuck 430 for processing.
  • the arrangement between the workpiece and various chuck configurations has been described in detail above in connection with FIGS. 1-7.
  • a plurality of mounted workpieces are then placed into a carrier assembly 452 for retaining a plurality of workpieces 412.
  • the carrier assembly 452 generally retains the workpieces 412 about a peripheral portion thereof.
  • the carrier assembly 452 comprises a first carrier member 454 and a second carrier member 456 that connect to form the overall carrier assembly 452.
  • each carrier member 454, 456 have a plurality of support legs 458 to provide rigidity to the carrier assembly 452.
  • each carrier member 454, 456 has four radially extending and generally equally spaced support legs 458. The spacing between the support legs 458 allows the process fluid to reach the workpieces 412 in the process chamber 420. Further, the support legs 458 have a plurality of apertures 460 therethrough to reduce the weight of the carrier members 454, 456.
  • first and second carrier members 454, 456 are joined, first and second engaging members 457, 459 extend from the carrier assembly 452. The engaging members 457, 459 mate with the rotor assembly 474 (explained below) to positionally retain the carrier assembly 452 within the rotor assembly 474.
  • the carrier assembly 452 has a central bore area 462. At a perimeter of the central bore area 462 the carrier assembly 452 has a plurality of positioning members 464 which position and retain the semiconductor workpieces 412 within the carrier assembly 452.
  • the positioning members 464 generally extend radially inward from the support legs 458. Thus, the positioning members 464 provide a gap between adjacent workpieces 412 in the carrier assembly 452 to allow the process fluid to interact with the entire backside of the workpieces 412. As best shown in FIG. 16, the positioning members 464 assist in retaining the workpieces 412, which are mounted in the chucks 430 as explained above, on-edge in the carrier assembly 452.
  • the carrier assembly 452 is typically made of polytetrafluoroethylene or stainless steel. In a preferred embodiment, it is made of polytetrafluoroethylene.
  • FIG. 17 Another carrier assembly 466 is shown in FIG. 17.
  • the carrier assembly 466 has a first end plate 468, a second end plate 470 and a plurality of linking members 472 extending between the first end plate 468 to the second end plate 470.
  • At least one of the linking members 472 has positioning members 464 depending therefrom and extending radially inward to position and retain the workpieces 412 within the carrier assembly 466.
  • the positioning members 464 in this carrier assembly 466 assist in retaining the workpieces 412, secured in the chucks 430, on-edge in the carrier assembly 468.
  • the positioning members 464 allow the workpieces 412 slight free movement both axially and rotationally when positioned in the carrier assembly 466.
  • the carrier assemblies 452, 466 may be used to process workpieces 412 of various sizes, however they are typically configured to process workpieces 412 of one size, such as 200 mm or 300 mm diameter semiconductor wafers.
  • the rotor assembly 474 generally comprises a generally cylindrical rotor 476, a generally circular base plate 478 and a drive shaft 480.
  • the rotor 476 has an exterior ring 482, a base 484, and a plurality of connecting members 486 extending between the base 484 and the exterior ring 482.
  • a cavity 488 is defined between the interior of the base 484, connecting members 486 and exterior ring 482.
  • the cavity 488 is shaped to accept the carrier assembly 452.
  • the drive shaft 480 is connected to a drive plate 490 and rotates with the drive shaft 480.
  • a plurality of auxiliary drive rods 492 are connected to the drive plate 490.
  • the drive rods 492 extend through the connecting members 486 to assist in driving the rotor assembly 474.
  • the rotor 476 is made of a polytetrafluoroethylene, however, other materials are acceptable.
  • the auxiliary drive rods 492 are made of carbon graphite.
  • the drive shaft 480 and drive plate 490 are typically made of stainless steel, or some other appropriate material.
  • a seal 494 is utilized to ensure that the process fluid does not enter into the internal components of the rotor assembly 474.
  • the carrier assembly 452 is loaded into the rotor assembly 474 in a cavity 506 of the process chamber 420.
  • the process chamber 420 comprises a chamber body 496 having a first end 498, a second end 500, an outer wall 502, and an opening 504 at the first end 498 of the chamber body 496 leading into the cavity 506 of the process chamber 420.
  • the cavity 506 is shaped to contain a rotor assembly 474 that is to be filled with a carrier assembly 452 loaded with a plurality of workpieces 412.
  • the chamber body 496 may have a split ring assembly 497 which connects to the first end 498 of the chamber body 496.
  • the chamber body 496 is made of a substantially thick, e.g., approximately 25 mm. thick, polytetrafluoroethylene. This material is substantially inert to various corrosive and caustic etchants that are used in the etching/thinning process. It is understood, however, that other materials which provide similar qualities may also be utilized for the liner. Alternatively, the process chamber 420 may have a liner 507 which is made of such materials.
  • the process chamber 420 also has various assemblies connected thereto, including a door assembly 508 and a motor assembly 512.
  • the motor assembly 512 generally comprises a motor 514 and a mounting plate 516.
  • the motor 514 is connected to the mounting plate 516, and the mounting plate 516 is in turn connected to the second end 500 of the chamber body 496 of the process chamber 420.
  • the motor 512 comprises a brushless D.C. servo motor.
  • the drive shaft 480 of the rotor assembly 474 extends out of the process chamber 420 and through an aperture 518 in the second end 500 of the chamber body 496.
  • the drive shaft 480 is inserted into the motor 514 to allow the motor 514 to drive, i.e., provide rotational motion to, the drive shaft 480. Accordingly, through the drive shaft 480 of the rotor assembly 474, the motor 514 is able to rotate the carrier assembly 452 and the workpieces 412 therein.
  • the process chamber 420 also includes a spray assembly 510 to inject process fluid into the process chamber.
  • the spray assembly 510 is integral with the process chamber 420.
  • the spray assembly 510 has a pair of dual, overlapping spray manifolds 520 to provide more uniform delivery of the process fluid.
  • Each of the manifolds 520 has two inlet ports 521, a plurality of nozzles 522 positioned in nozzle receptacles 523, and a plurality of openings 525 through which the processing fluid is sprayed into the process chamber 420 from the nozzles 522.
  • the manifolds 520 receive the process fluid at the inlet port 521 from a delivery tank 546, and distribute the process fluids along the length of the manifold 520 to a plurality of nozzles 522 as shown in FIG. 24.
  • a nozzle retainer 524 covers the nozzles 522.
  • the nozzles 522 spray the process fluid into the cavity 506 of the process chamber 420 and onto the exposed portion of the workpieces in the carrier assembly 452 as they are rotated by the rotor assembly 474.
  • each of the manifolds 520 have inlet ports 521 at both the first end 498 and the second end 500 of the process chamber 420, and nozzles 522 extending substantially along the entire length of the process chamber 420. This provides for a dual inlet of process fluid in opposing directions about the manifold 520. By having a dual inlet of the process fluid in the manifolds 520, the pressure drop across the manifold 520 is decreased and the amount of flow or volume of fluid able to be introduced into the process chamber 420 is increased.
  • the door assembly 508 extends adjacent the first end 498 of the chamber body 496 to provide access into the cavity 506 of the process chamber 420.
  • the door assembly 508 preferably forms a seal with the first end 498 of the process chamber 420.
  • the door assembly 508 generally comprises a support plate 526, a front panel plate 528, a door 530 and a pair of linear tracks or guides 532.
  • the liner tracks 532 comprise linear actuators.
  • the support plate 526 is connected to the chamber body 496 to fix the door assembly 508 to the process chamber 420.
  • the front panel plate 528 extends below the support plate 526 and provides a support for a lower end of the linear actuators 532.
  • the linear actuators 532 support the door 530 and provide for moving the door 530 from a first position, wherein the door 530 sealingly closes the opening 504 to the cavity 506 of the chamber body 496, to a second position (as shown in FIG. 20) wherein the cavity 506 is accessible.
  • the door 530 may also have a window 534 for allowing visual inspection into the process chamber 420.
  • the process chamber 420 is generally fixed within the cabinet 414 of the machine 410 at an inclined angle.
  • the process chamber 420 has mounting members 536 on the sides of the chamber body 596.
  • the mounting members 536 mate with receivers (not shown) in the machine 410 to support the process chamber 420.
  • the mounting members 536 operate as male-type mating members, and the receivers operate as female-type mating members. It is understood, however, that other types of mounting is possible without departing from the scope of the present invention, including that the mounting members 536 on the chamber body 496 may be of the female type, and the receiving members in the machine 410 may be of the male type.
  • the process chamber 420 may be oriented horizontally, it is preferably orientated at an inclined angle.
  • the first end 498 of the chamber body 496 is inclined upwardly at an angle of, for example, 5 to 30°, and most preferably about 10°, so that the first end 498 of the process chamber 420 is at a higher elevation than the second end 500 of the processing chamber 420.
  • the receiving members in the cabinet 414 are provided at the appropriate angle of inclination.
  • the chamber body 496 of the process chamber 420 is connected to the receiving members via the mounting members 536 as described above. It is understood that the semiconductor workpieces are thus positioned at approximately the same angle of inclination as the process chamber 420.
  • the process chamber 420 has an exhaust vent 540 and a exit port or drain 542.
  • the exhaust vent 540 exhausts gases and vapors from the cavity 506 of the processing chamber 420 and out a vent outlet 541.
  • the exhaust vent 540 extends about substantially the entire length of the chamber body 496.
  • the drain 542 comprises a drain trough that similarly extends about substantially the entire length of the chamber body 496 in a preferred embodiment to drain spent process fluid and removed silicon down and out of the process chamber 420.
  • the vent 540 may be located in an opposing portion of the chamber body as the drain 542.
  • the drain 542 has a drain outlet 543 that is connected to a recirculation system 544 to drain the excess and used process fluid and silicon from the cavity 506 of the chamber body 496 of the process chamber 420.
  • the recirculation system 544 typically delivers the excess and used process fluid from the process chamber to the appropriate delivery tank 546. Additionally, the process fluids and removed silicon may be drained out of the process chamber 420 and discarded instead of being recirculated.
  • the vent 540 and the drain 542 are configured to provided remove the excess/used process fluid and fumes from the process chamber in a single pass. The fumes vent upward out the exhaust vent 540, and the spent process fluid and silicon are drained downward and out the drain 542.
  • the process fluid utilized in the current system comprises one or more of: water, hydrogen peroxide, ozone, potassium hydroxide, sodium hydroxide, hydrofluoric acid, nitric acid, sulfuric acid, acidic acid and phosphoric acid.
  • Other process fluids are also possible.
  • the process fluid can be mixed and adjusted to address the specific needs of the system.
  • a volume of the process fluid is typically housed in the delivery tank 546 for delivery to the process chamber 420. Additional components, however, may be provided as part of an overall system in delivering fluids from the delivery tank 546 to the process chamber 420.
  • An example of a fluid delivery schematic is shown in FIG. 26.
  • a pump 548 is used to pump the process fluid from the delivery tank 546 to the process chamber 420.
  • a filter 550 is provided between the delivery tank 546 and the process chamber 420 to filter the process fluid.
  • a concentration monitor 552 may be provided between the delivery tank 546 and the process chamber 420 to monitor the concentration of the process fluid being delivered to the process chamber 420.
  • a flow meter 554 is utilized to monitor the volume of process fluid delivered to the process chamber 420.
  • a heat exchanger 556 may also be provided in connection with the delivery tank 546 to regulate the temperature of the process fluid therein.
  • the system may also include concentrated metering vessels 558 that contain concentrated volumes of the various processing fluids.
  • concentrated metering vessels 558 that contain concentrated volumes of the various processing fluids.
  • three metering vessels 558 are provided.
  • one metering vessel contains hydrofluoric acid
  • another metering vessel contains nitric acid
  • another metering vessel contains phosphoric acid.
  • Each metering vessel 558 typically has its own metering pump 560 to deliver a specific process fluid from the metering vessel 558 to the delivery tank 546.
  • the concentration monitor 552 usually determined by the concentration monitor 552
  • one or more of the metering pumps 560 may dose the bath of process fluid in the appropriate delivery tank 546 to maintain the required concentration of fluid therein.
  • the metering vessels 558 may be housed within the tool 410, or they may be housed outside the tool and the fluid merely pumped to via the metering pumps 560 into the tool 410. [0096] As explained below in the method for processing the workpieces, various cleaning and etching steps are provided. For each step, a separate delivery tank 546 is typically provided.
  • the processing fluid necessary for the pre-cleaning step 612 may be housed in one delivery tank 546
  • the processing fluid necessary for the coarse etching step 614 may be housed in a separate delivery tank 546
  • the processing fluid necessary for the polish etching step 616 may be housed in another separate delivery tank 546
  • the processing fluid necessary for the rinsing step 618 may be housed in yet another separate delivery tank 546.
  • the metering vessels 558 may therefore be utilized to separately deliver fluid to the appropriate delivery tank 546 (only one delivery tank is shown in FIG. 26).
  • the recirculation system delivers the excess and used process fluid from the process chamber to the appropriate delivery tank 546 depending on the current process step.
  • the first step 600 that is usually performed in processing the workpieces is to place the workpieces 412 in chucks 430 with the back side of the workpiece 412 exposed.
  • the second step 602 includes loading the workpieces 412 (already in the chucks 430) into the carrier assembly 452 between the positioning members of the carrier assembly. After the carrier assembly 452 is fully loaded with a plurality of workpieces 412, typically 25 to 50 workpieces, the carrier assembly 452 is placed in the rotor assembly 474 within the cavity 506 of the process chamber 420 in step 604. After the workpieces 412 are loaded into the rotor assembly 474 in the process chamber 420, the door 530 is moved to the first position to sealingly close the opening 504 to the cavity 506 of the chamber body 496 (step 608).
  • the workpieces 412 are placed in the cavity 506 and the door 530 to the process chamber 420 is closed, the workpieces are prepared to be processed. Typically, the workpieces 412 are processed while rotating in the process chamber 420. Accordingly, at step 610, the motor 514 is charged to rotate the rotor assembly 474 within the process chamber 420. The workpieces 412 rotate with the carrier assembly 452 in the rotor assembly 474, however, the workpieces 412 also somewhat independently rotate and move axially as explained above. Next, process fluid is sprayed through the nozzles 522 of the spray assembly 510 onto the exposed portion of the workpieces in the carrier assembly 452 as they are rotated by the rotor assembly 474.
  • a first pre-cleaning spray step (step 612) is performed.
  • a cleaning fluid is sprayed through the spray assembly 510 and onto the exposed portion of the workpieces 412 in the process chamber 420 to remove surface contamination on the workpieces 412.
  • the cleaning solution is housed in a first delivery tank and may comprise at least one of H 2 O, H 2 O 2 and NH 4 OH.
  • a first coarse chemical etch is performed at step 614.
  • an increased etch rate is utilized to remove larger quantities of the substrate from the workpiece 412.
  • a polish chemical etch is performed on the workpieces 412 at step 616.
  • the step of chemically etching the workpieces 412 comprises applying a solution of HF, HNO 3 and H 3 PO 4 to the workpieces 412.
  • Two different delivery tanks are used to house the fluid for the coarse and polish etching processes. Through these two steps the batch of workpieces 412 are thinned in the process chamber 420.
  • the workpieces 412 may be thinned to a thickness of less than 100 microns.
  • the workpieces 412 are rinsed in the process chamber at step 618. Rinsing the workpieces 412 generally comprises applying a solution Of H 3 PO 4 to the workpieces 412 in the process chamber 420.
  • This solution is housed in yet another delivery tank 546.
  • the used process fluid is typically reclaimed via the recirculation system 544, and delivered from the process chamber 420 to the appropriate delivery tank 546.
  • the workpieces 412 After the workpieces 412 have been thinned and rinsed, they are typically removed from the process chamber 420 at step 620. Generally, the workpieces 412 remain in the carrier assembly 452, and the carrier assembly 452 is removed from the rotor assembly 474 in the process chamber 420.
  • the carrier assembly 452 holding the workpieces 412 is placed in the secondary processing module 418 for drying and rinsing thereof.
  • the step of drying and rinsing the workpieces 412 in the drying and rinsing chamber 422 generally comprises first applying deionized water to the workpieces 412 to rinse the workpieces 412, and then applying isopropyl alcohol vapor or hot nitrogen gas to the workpieces to dry the workpieces 412, all while spinning the workpieces 412. Each of these fluids may be held in yet another delivery tank.
  • the carrier assembly 452 is removed from the secondary process chamber 422 at step 626. At step 628 the workpieces
  • the thinned workpiece 50 is comprised of a rim 70 and a main body 72.
  • the rim 70 is formed at the periphery of the workpiece 50 and is integral with the main body 72.
  • the processed workpiece 50 will have a main body 72 with a thickness less than 125 microns and a rim 70 with a thickness in a range of approximately 600 to 725 microns.
  • the main body 72 thickness will be less than 100 microns, preferably less than 50 microns, and especially less than 25 microns.
  • the rim 70 is formed at the exclusion zone of the workpiece 50 and will have a width (shown as w in FIG. 10) in a range of 1-10 mm, preferably a range of 1-5 mm and especially in a range of 1-2 mm.
  • the main body 72 and rim 70 are formed from substantially the same material as the pre-thinned workpiece 50. Most preferably the main body 72 and rim 70 are comprised of silicon.
  • the initial thickness of a workpiece 50 to be thinned according to the present invention may be 200 microns or less.
  • a workpiece 50 thinned according to the present invention will have a main body 72 thickness less than about 50% of the rim 70 thickness, preferably less than about 40% of the rim 70 thickness, more preferably less than 30% of the rim 70 thickness, preferentially less than 20% of the rim 70 thickness, even less than 10% of the rim 70 thickness and especially less than 5% of the rim 70 thickness.
  • the present invention can be used to thin workpieces 50 of varying sizes. Accordingly, the rim 70 will preferably comprise less than approximately 5% of the back side 53 surface area (BSSA) of the workpiece 50, more preferably less than 3% of the BSSA, and even less than 1% of the BSSA.
  • BSSA back side 53 surface area

Abstract

Cette invention concerne un système servant au traitement de pièces de semi-conducteur. Un nouvel appareil et un nouveau procédé permettent de produire des pièces plus fines qui restent cependant résistantes. A cet effet, on prévoit, plus particulièrement un mandrin qui comprend un corps, un organe de retenue fixé amovible audit corps et un élément de formation de joint. Lorsqu'une pièce est placée sur le corps du mandrin et que l'organe de retenue est en prise avec le corps, une partie périphérique de la face arrière de la pièce est couverte par l'organe de retenue, alors qu'une zone interne de la face arrière de la pièce est exposée. La face arrière exposée de la pièce est alors soumise à un traitement d'attaque chimique par voie humide qui produit l'amincissement de la pièce et forme un rebord relativement épais constitué de matériau semi-conducteur sur le pourtour de la pièce. Ce rebord ou cercle épais confère résistance à la pièce de semi-conducteur ainsi amincie, qui sinon serait fragile. Cette invention permet de réaliser l'amincissement d'une pièce unique ou d'un lot de pièces. Les pièces de semi-conducteurs ainsi fabriquées offrent une structure améliorée pour la manutention de plaquettes de semi-conducteurs amincies dans des machines de traitement automatisé traditionnelles. On obtient ainsi de meilleurs rendements et une plus grande efficacité de traitement.
EP05789099A 2004-08-20 2005-08-18 Systeme d'amincissement de pieces de semi-conducteur Ceased EP1799446A4 (fr)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US10/922,762 US20060040111A1 (en) 2004-08-20 2004-08-20 Process chamber and system for thinning a semiconductor workpiece
US10/923,436 US20060046499A1 (en) 2004-08-20 2004-08-20 Apparatus for use in thinning a semiconductor workpiece
US10/923,132 US7354649B2 (en) 2004-08-20 2004-08-20 Semiconductor workpiece
US10/923,363 US7288489B2 (en) 2004-08-20 2004-08-20 Process for thinning a semiconductor workpiece
PCT/US2005/029598 WO2006023753A2 (fr) 2004-08-20 2005-08-18 Systeme d'amincissement de pieces de semi-conducteur

Publications (2)

Publication Number Publication Date
EP1799446A2 true EP1799446A2 (fr) 2007-06-27
EP1799446A4 EP1799446A4 (fr) 2010-03-03

Family

ID=35968220

Family Applications (1)

Application Number Title Priority Date Filing Date
EP05789099A Ceased EP1799446A4 (fr) 2004-08-20 2005-08-18 Systeme d'amincissement de pieces de semi-conducteur

Country Status (8)

Country Link
EP (1) EP1799446A4 (fr)
JP (1) JP2008511141A (fr)
KR (2) KR20070051337A (fr)
CN (1) CN102790000B (fr)
AT (1) AT10874U1 (fr)
DE (1) DE212005000047U1 (fr)
TW (2) TWI463527B (fr)
WO (1) WO2006023753A2 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG147330A1 (en) 2007-04-19 2008-11-28 Micron Technology Inc Semiconductor workpiece carriers and methods for processing semiconductor workpieces
US7989318B2 (en) * 2008-12-08 2011-08-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method for stacking semiconductor dies
DE102009037281B4 (de) * 2009-08-12 2013-05-08 Siltronic Ag Verfahren zur Herstellung einer polierten Halbleiterscheibe
NL2014625B1 (en) * 2015-04-13 2017-01-06 Suss Microtec Lithography Gmbh Wafer treating device and sealing ring for a wafer treating device.
DE102019110402A1 (de) 2018-05-25 2019-11-28 Infineon Technologies Ag Ein Verfahren zum Bearbeiten eines Halbleiterwafers, eine Halbleiter-Verbundstruktur und eine Stützstruktur für einen Halbleiterwafer
JP7136679B2 (ja) * 2018-12-13 2022-09-13 株式会社荏原製作所 基板ホルダに使用するシール

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2024961A1 (fr) * 1968-11-29 1970-09-04 Philips Nv
US4266334A (en) * 1979-07-25 1981-05-12 Rca Corporation Manufacture of thinned substrate imagers
JPH0684731A (ja) * 1992-09-07 1994-03-25 Nec Kyushu Ltd 半導体ウェハー
EP1061584A2 (fr) * 1999-06-17 2000-12-20 Intersil Corporation Procédé de fabrication d'une rondelle de silicium ultra fine et auto-supportée
US20030119281A1 (en) * 2001-12-12 2003-06-26 Mikimasa Suzuki Method for manufacturing semiconductor power device
US20030215985A1 (en) * 2002-05-15 2003-11-20 Hitachi, Ltd. Semiconductor wafer and manufacturing method of semiconductor device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5011782A (en) * 1989-03-31 1991-04-30 Electric Power Research Institute Method of making passivated antireflective coating for photovoltaic cell
JP3161515B2 (ja) * 1997-10-08 2001-04-25 三菱マテリアル株式会社 半導体装置の製造方法
US6613681B1 (en) * 1998-08-28 2003-09-02 Micron Technology, Inc. Method of removing etch residues
US6248222B1 (en) * 1998-09-08 2001-06-19 Acm Research, Inc. Methods and apparatus for holding and positioning semiconductor workpieces during electropolishing and/or electroplating of the workpieces
US6402843B1 (en) * 1999-12-07 2002-06-11 Trusi Technologies, Llc Non-contact workpiece holder
US6334453B1 (en) * 2000-02-14 2002-01-01 Semitool, Inc. Seal configuration for use with a motor drive assembly in a microelectronic workpiece processing system
US6790763B2 (en) * 2000-12-04 2004-09-14 Ebara Corporation Substrate processing method
JP3899871B2 (ja) * 2001-08-23 2007-03-28 株式会社デンソー エッチング方法及びエッチング装置並びに薄膜センサの製造方法
JP3620528B2 (ja) * 2001-12-12 2005-02-16 株式会社デンソー 半導体装置の製造方法
US20040074808A1 (en) * 2002-07-05 2004-04-22 Entegris, Inc. Fire retardant wafer carrier
DE10260233B4 (de) * 2002-12-20 2016-05-19 Infineon Technologies Ag Verfahren zum Befestigen eines Werkstücks mit einem Feststoff an einem Werkstückträger und Werkstückträger
US6940181B2 (en) * 2003-10-21 2005-09-06 Micron Technology, Inc. Thinned, strengthened semiconductor substrates and packages including same
US20050239295A1 (en) * 2004-04-27 2005-10-27 Wang Pei-L Chemical treatment of material surfaces

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2024961A1 (fr) * 1968-11-29 1970-09-04 Philips Nv
US4266334A (en) * 1979-07-25 1981-05-12 Rca Corporation Manufacture of thinned substrate imagers
JPH0684731A (ja) * 1992-09-07 1994-03-25 Nec Kyushu Ltd 半導体ウェハー
EP1061584A2 (fr) * 1999-06-17 2000-12-20 Intersil Corporation Procédé de fabrication d'une rondelle de silicium ultra fine et auto-supportée
US20030119281A1 (en) * 2001-12-12 2003-06-26 Mikimasa Suzuki Method for manufacturing semiconductor power device
US20030215985A1 (en) * 2002-05-15 2003-11-20 Hitachi, Ltd. Semiconductor wafer and manufacturing method of semiconductor device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2006023753A2 *

Also Published As

Publication number Publication date
TWI502620B (zh) 2015-10-01
TW200614329A (en) 2006-05-01
TWI463527B (zh) 2014-12-01
CN102790000B (zh) 2016-06-29
DE212005000047U1 (de) 2007-08-02
JP2008511141A (ja) 2008-04-10
KR20070048793A (ko) 2007-05-09
WO2006023753A3 (fr) 2009-06-25
EP1799446A4 (fr) 2010-03-03
CN102790000A (zh) 2012-11-21
AT10874U1 (de) 2009-11-15
KR20070051337A (ko) 2007-05-17
TW201230144A (en) 2012-07-16
WO2006023753A2 (fr) 2006-03-02

Similar Documents

Publication Publication Date Title
US7898089B2 (en) Semiconductor workpiece
KR102556923B1 (ko) 웨이퍼 부착을 감소시키기 위해 통합된 탄성중합체 립시일 및 컵 하단부
US7399713B2 (en) Selective treatment of microelectric workpiece surfaces
CN101415547A (zh) 用于减薄半导体工件的系统
US7217325B2 (en) System for processing a workpiece
EP1799446A2 (fr) Systeme d'amincissement de pieces de semi-conducteur
WO1999046064A1 (fr) Traitement selectif de la surface d'une piece microelectronique
US7625821B2 (en) Process and apparatus for thinning a semiconductor workpiece
US7354649B2 (en) Semiconductor workpiece
US20040173308A1 (en) Semiconductor wafer handler
TW202308032A (zh) 基板處理方法
KR20060123174A (ko) 작업편 처리 시스템
US20060040111A1 (en) Process chamber and system for thinning a semiconductor workpiece
JP3137515U6 (ja) 半導体被処理物を薄肉化するためのシステム
JP3137515U (ja) 半導体被処理物を薄肉化するためのシステム
KR200446756Y1 (ko) 반도체 제품
TWI827013B (zh) 基板處理方法
JPH10163146A (ja) 基板洗浄システム
EP1589568A2 (fr) Traitement sélectif de la surface d'une pièce microélectronique
JPH10163148A (ja) 基板洗浄装置のゲート装置

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20070316

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL BA HR MK YU

DAX Request for extension of the european patent (deleted)
R17D Deferred search report published (corrected)

Effective date: 20090625

RIC1 Information provided on ipc code assigned before grant

Ipc: B32B 13/04 20060101ALI20090702BHEP

Ipc: B32B 9/04 20060101ALI20090702BHEP

Ipc: H01L 21/461 20060101ALI20090702BHEP

Ipc: H01L 21/302 20060101ALI20090702BHEP

Ipc: H01L 21/36 20060101ALI20090702BHEP

Ipc: C23F 1/00 20060101AFI20090702BHEP

A4 Supplementary search report drawn up and despatched

Effective date: 20100122

RA4 Supplementary search report drawn up and despatched (corrected)

Effective date: 20100129

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: APPLIED MATERIALS, INC.

REG Reference to a national code

Ref country code: DE

Ref legal event code: R003

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN REFUSED

18R Application refused

Effective date: 20140227