EP1778891A1 - Composition solide divisee formee de grains a depot metallique continu, son procede de fabrication, et son utilisation à titre de catalyseur - Google Patents
Composition solide divisee formee de grains a depot metallique continu, son procede de fabrication, et son utilisation à titre de catalyseurInfo
- Publication number
- EP1778891A1 EP1778891A1 EP05778656A EP05778656A EP1778891A1 EP 1778891 A1 EP1778891 A1 EP 1778891A1 EP 05778656 A EP05778656 A EP 05778656A EP 05778656 A EP05778656 A EP 05778656A EP 1778891 A1 EP1778891 A1 EP 1778891A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- metal
- composition according
- grains
- composition
- solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000003054 catalyst Substances 0.000 title claims description 24
- 238000001465 metallisation Methods 0.000 title claims description 17
- 239000008247 solid mixture Substances 0.000 title claims description 10
- 239000000203 mixture Substances 0.000 claims abstract description 81
- 229910052751 metal Inorganic materials 0.000 claims abstract description 76
- 239000002184 metal Substances 0.000 claims abstract description 76
- 239000007787 solid Substances 0.000 claims abstract description 16
- 239000011949 solid catalyst Substances 0.000 claims abstract description 14
- 239000011148 porous material Substances 0.000 claims abstract description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 61
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 29
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 28
- 229910052742 iron Inorganic materials 0.000 claims description 28
- 239000011651 chromium Substances 0.000 claims description 19
- 239000002245 particle Substances 0.000 claims description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
- 239000007789 gas Substances 0.000 claims description 18
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 16
- 239000002243 precursor Substances 0.000 claims description 16
- 229910052799 carbon Inorganic materials 0.000 claims description 15
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 12
- 239000011159 matrix material Substances 0.000 claims description 12
- 238000005229 chemical vapour deposition Methods 0.000 claims description 11
- 229910052804 chromium Inorganic materials 0.000 claims description 11
- 229910052759 nickel Inorganic materials 0.000 claims description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 10
- 239000002041 carbon nanotube Substances 0.000 claims description 10
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 9
- 238000005243 fluidization Methods 0.000 claims description 9
- 229910052750 molybdenum Inorganic materials 0.000 claims description 9
- 239000011733 molybdenum Substances 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 229910052723 transition metal Inorganic materials 0.000 claims description 9
- 150000003624 transition metals Chemical class 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 125000002524 organometallic group Chemical group 0.000 claims description 8
- 229910052763 palladium Inorganic materials 0.000 claims description 8
- 229910052707 ruthenium Inorganic materials 0.000 claims description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 239000010937 tungsten Substances 0.000 claims description 8
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims description 6
- 229910017052 cobalt Inorganic materials 0.000 claims description 6
- 239000010941 cobalt Substances 0.000 claims description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 6
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 239000011343 solid material Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 4
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 claims description 4
- 238000000354 decomposition reaction Methods 0.000 claims description 4
- 239000000539 dimer Substances 0.000 claims description 4
- LZKLAOYSENRNKR-LNTINUHCSA-N iron;(z)-4-oxoniumylidenepent-2-en-2-olate Chemical compound [Fe].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O LZKLAOYSENRNKR-LNTINUHCSA-N 0.000 claims description 4
- 239000002105 nanoparticle Substances 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 239000003153 chemical reaction reagent Substances 0.000 claims description 3
- 238000006356 dehydrogenation reaction Methods 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- OXABARYBIRWYEE-UHFFFAOYSA-N 1,2-dimethylcycloocta-1,3-diene platinum Chemical compound [Pt].CC1=C(C)C=CCCCC1 OXABARYBIRWYEE-UHFFFAOYSA-N 0.000 claims description 2
- IBPQQFLPIRRJAB-UHFFFAOYSA-N C[Ni]C1C=CC=C1 Chemical compound C[Ni]C1C=CC=C1 IBPQQFLPIRRJAB-UHFFFAOYSA-N 0.000 claims description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910021536 Zeolite Inorganic materials 0.000 claims description 2
- ZKJYOYFXVWGPKV-UHFFFAOYSA-N benzene tungsten Chemical compound [W].c1ccccc1.c1ccccc1 ZKJYOYFXVWGPKV-UHFFFAOYSA-N 0.000 claims description 2
- FQNHWXHRAUXLFU-UHFFFAOYSA-N carbon monoxide;tungsten Chemical group [W].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] FQNHWXHRAUXLFU-UHFFFAOYSA-N 0.000 claims description 2
- ZKXWKVVCCTZOLD-FDGPNNRMSA-N copper;(z)-4-hydroxypent-3-en-2-one Chemical compound [Cu].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O ZKXWKVVCCTZOLD-FDGPNNRMSA-N 0.000 claims description 2
- QYJPSWYYEKYVEJ-FDGPNNRMSA-L copper;(z)-4-oxopent-2-en-2-olate Chemical compound [Cu+2].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O QYJPSWYYEKYVEJ-FDGPNNRMSA-L 0.000 claims description 2
- KZPXREABEBSAQM-UHFFFAOYSA-N cyclopenta-1,3-diene;nickel(2+) Chemical compound [Ni+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KZPXREABEBSAQM-UHFFFAOYSA-N 0.000 claims description 2
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 claims description 2
- KTWOOEGAPBSYNW-UHFFFAOYSA-N ferrocene Chemical compound [Fe+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KTWOOEGAPBSYNW-UHFFFAOYSA-N 0.000 claims description 2
- 239000012530 fluid Substances 0.000 claims description 2
- 239000008246 gaseous mixture Substances 0.000 claims description 2
- 239000000395 magnesium oxide Substances 0.000 claims description 2
- FZHCFNGSGGGXEH-UHFFFAOYSA-N ruthenocene Chemical compound [Ru+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 FZHCFNGSGGGXEH-UHFFFAOYSA-N 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- 239000010457 zeolite Substances 0.000 claims description 2
- WBTMVDBILYQWBT-UHFFFAOYSA-N C(CCC)[W](CCCC)CCCC Chemical compound C(CCC)[W](CCCC)CCCC WBTMVDBILYQWBT-UHFFFAOYSA-N 0.000 claims 1
- MQIKJSYMMJWAMP-UHFFFAOYSA-N dicobalt octacarbonyl Chemical group [Co+2].[Co+2].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] MQIKJSYMMJWAMP-UHFFFAOYSA-N 0.000 claims 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 230000007704 transition Effects 0.000 abstract 1
- 239000002071 nanotube Substances 0.000 description 20
- 230000003197 catalytic effect Effects 0.000 description 16
- 239000012159 carrier gas Substances 0.000 description 9
- 238000009434 installation Methods 0.000 description 6
- 239000012071 phase Substances 0.000 description 6
- 238000004438 BET method Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000007935 neutral effect Effects 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 238000005979 thermal decomposition reaction Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000010583 slow cooling Methods 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 238000004627 transmission electron microscopy Methods 0.000 description 2
- 229910018540 Si C Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000002065 inelastic X-ray scattering Methods 0.000 description 1
- 150000002505 iron Chemical class 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 239000002048 multi walled nanotube Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000002076 thermal analysis method Methods 0.000 description 1
- 238000002411 thermogravimetry Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 238000002424 x-ray crystallography Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/16—Preparation
- C01B32/162—Preparation characterised by catalysts
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/16—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium
- B01J23/24—Chromium, molybdenum or tungsten
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/38—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals
- B01J23/40—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals of the platinum group metals
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
- B01J23/74—Iron group metals
- B01J23/745—Iron
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/02—Impregnation, coating or precipitation
- B01J37/0215—Coating
- B01J37/0221—Coating of particles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/02—Impregnation, coating or precipitation
- B01J37/0238—Impregnation, coating or precipitation via the gaseous phase-sublimation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/442—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using fluidised bed process
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/06—Multi-walled nanotubes
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/20—Nanotubes characterized by their properties
- C01B2202/36—Diameter
Definitions
- the invention relates to a divided solid composition formed of grains having a mean particle size (D50) greater than 25 ⁇ m and less than 2.5 mm, having at least one transition metal on the surface. It extends to its manufacturing process, and its use as a catalyst.
- D50 mean particle size
- the divided solid compositions of grains having on the surface at least one transition metal in the unoxidized state can serve in particular as a catalyst in many chemical reactions.
- a deposit of at least one continuous non-oxidized large metal in the form of a gangue around a porous core has unexpected properties, especially as a solid catalyst, particularly in the dehydrogenation and / or thermal decomposition reactions in the gas phase, and more particularly for the selective formation of nanoparticles of silicon and / or carbon and / or boron and / or nitrogen - in particular carbon nanotubes from a gaseous carbon source -.
- the invention thus relates to a divided solid composition
- a divided solid composition comprising grains having an average particle size greater than 25 ⁇ m and less than 2.5 mm, and each having:
- gangue or “continuous” layer is meant the fact that it is possible to travel continuously throughout the surface of this gangue or layer, without having to cross a portion of another nature (including a portion free of non-oxidized metal deposition ).
- the metal (s) is (are) not dispersed on the surface of each grain, but instead forms a continuous layer of area. apparently corresponding to that of the grains.
- This layer is moreover “homogeneous” in that it is formed of at least one pure metal having an identical solid composition throughout its volume. This layer covers the entire surface of the heart and thus form a gangue.
- such a composition according to the invention provides, in particular as a catalyst, effects completely different from those obtained with a similar composition in which the heart of the grains n is not porous, even though this core is normally not accessible from the outside, and in particular to the reagents, and that the specific surface area of the composition according to the invention is very different from that which would be obtained if the pores of the heart were accessible.
- the metal gangue is part of an elemental metal deposit (that is to say in which one (or more) metal (s) is (are) deposited (s) in the state d element (s), that is to say in atomic or ionic form) made in a single step on a solid support.
- an elemental metal deposit that is to say in which one (or more) metal (s) is (are) deposited (s) in the state d element (s), that is to say in atomic or ionic form
- Such a single-stage elemental metal deposit can result in particular from a vacuum evaporation deposition (PVT), or a chemical vapor deposition (CVD), or electrochemical deposition.
- PVD vacuum evaporation deposition
- CVD chemical vapor deposition
- Such an elemental metallic deposit can not result from a process carried out in several stages in the liquid phase - in particular by precipitation or impregnation -, or deposition in the molten state and solidification, or by oxide deposition ( s) metal (s) followed by a reduction step.
- a composition according to the invention is distinguished in particular from a composition obtained by grinding pure metal parts manufactured metallurgically.
- a single-stage elemental metal deposit is formed of crystalline microdomains of the metal (s).
- Such an elemental metal deposit is formed of bulbs (rounded and globular bulges) metal agglutinated to each other.
- the metal gangue forms the outer surface of the grains, immediately after its manufacture and if the composition is not placed in the presence of an oxidizing medium. If the composition is vented to atmosphere, an oxide layer may form at the periphery. This oxide layer can then be suppressed by a reduction step if necessary.
- the metal gangue covers the surface of the macroscopic form (envelope surface considered without taking into account the porosity) of the grains which is itself a closed surface.
- the metal gangue therefore extends along a closed surface around the porous core.
- closed surface is used in the topological sense of the term, that is to say a surface that delimits and surrounds an internal finite space which is the heart of the grain, and which can take various forms (sphere, polyhedron). , prism, torus, cylinder, cone ).
- the shape of each grain depends on the shape of the material core solid and conditions in which the elemental metal deposit constituting the metal gangue is formed on this core.
- the fact that these pores are made inaccessible by the metallic gangue can easily be verified by a simple measurement of the variation of the specific surface area due to the presence of the metallic gangue and / or by the calculation of the volume of the metal matrix.
- mesopores and / or residual micropores and / or by X.PS analysis to demonstrate that the constituent chemical elements of the core are no longer accessible on the surface.
- the composition according to the invention has a specific surface area corresponding to that of grains whose pores are inaccessible.
- the core is formed of a porous material selected from alumina, an activated carbon, silica, a silicate, magnesia, titanium oxide, zirconia, a zeolite.
- the core is formed of a material other than a non-oxidized transition metal.
- the metal layer of each grain has an average apparent area (that is to say the area of its envelope surface, not taking into account its possible porosity) higher at 2.10 3 ⁇ m 2 . More particularly, advantageously and according to the invention, the metal gangue of each grain has an average apparent area of between 10 4 ⁇ m 2 and 1, 5.10 5 ⁇ m 2 .
- the metal gangue of each grain extends superficially with a global mean dimension developed greater than 35 microns.
- the developed global average dimension is the equivalent radius of the disk circumscribing the metallic gangue after having virtually developed it in a plane.
- the metal gangue of each grain extends superficially with a global average developed dimension of between 200 ⁇ m and 400 ⁇ m.
- the metal bulbs formed by the elemental metal deposition and forming the metal matrix have an average size of between 10 nm and 1 ⁇ m, especially between 30 nm and 200 nm.
- the shape and size of the grains are adapted to allow the formation of a fluidized bed of the grains of a composition according to the invention.
- a composition according to the invention is advantageously applicable to form a fluidized bed, especially as a supported metal catalyst.
- the composition has a mean particle size (D50) of between 100 ⁇ m and 200 ⁇ m.
- D50 mean particle size
- the macroscopic shape of the grains can be globally substantially spherical or not.
- the invention also applies to grains of macroscopic shape more or less flattened (flakes, discs ...) and / or elongated (cylinders, rods, ribbons ).
- the solid core is formed of a porous material with a specific surface area greater than 100 m 2 / g.
- the solid composition according to the invention has a specific surface area of less than 25 m 2 / g.
- the thickness of the elemental metal deposit extends at least partly in excess relative to the porous core to form said metal layer.
- the metal deposition may also extend at least partly in the thickness of the porous core. It is not always easy to determine precisely and clearly the interface between the solid porous core impregnated with the metal deposit and the metal matrix extending out of the porous core and their relative arrangement.
- the elemental metal deposition (which comprises said homogeneous continuous metal matrix and the part of the porous core impregnated with metal (aux)) extends over a thickness greater than 0.5 ⁇ m -in particular from the order from 2 to 20 ⁇ m-.
- the metal gangue comprises at least one metal chosen from iron, cobalt, nickel, molybdenum, copper, tungsten, chromium, ruthenium, palladium and platinum. or a mixture of such metals.
- the metal gangue is distinct from a gangue of tantalum.
- the composition according to the invention is formed of porous alumina grains covered with a gangue formed by a metal deposit consisting mainly of iron.
- the invention relates to a composition characterized in that the metal gangue is an iron layer.
- the composition comprises more than 35% by weight of metal (aux).
- composition according to the invention is advantageously formed mainly of such grains, that is to say contains more than 50% of such grains, preferably more than 90% of such grains.
- the composition has a unimodal particle size distribution, and the equivalent diameter of the grains is between 80% and 120% of the average grain diameter of the composition.
- the invention extends to a composition exclusively formed, with impurities, of such grains, that is to say whose grains are all in conformity with all or part of the characteristics of the invention defined above or hereinafter. after.
- the invention extends to a method of manufacturing a composition according to the invention.
- oxidized in which a metal deposit is made in a non-oxidizing medium on particles of a solid support forming the core of each grain, characterized in that said metal deposit is carried out in the form of an elemental metal deposit of at least a non-oxidized transition metal selected from iron, cobalt, nickel, molybdenum, copper, tungsten, chromium, ruthenium, palladium and platinum, on a support of mesoporous and / or microporous solid material a time suitable so that this deposit forms, on each mesoporous and / or microporous solid core, a homogeneous continuous metal matrix covering the heart of each grain so that the mesopor es and / or micropores of the heart are rendered inaccessible.
- the metal deposition is carried out in the form of an elemental metal deposit (that is to say in which one (or more) metal (s) is (are) deposited (s) at the element state (s), that is to say in atomic or ionic form) in a single step in a fluidized bed solid support grains fed by at least one gas phase precursor capable of forming said metal deposit.
- an elemental metal deposit that is to say in which one (or more) metal (s) is (are) deposited (s) at the element state (s), that is to say in atomic or ionic form
- Such a process can be carried out by evaporation under vacuum, or by gas phase deposition, or by electrochemical deposition.
- said metal deposition is carried out in the form of a chemical vapor deposition.
- said metal deposition is carried out from at least one organometallic precursor.
- At least one precursor is chosen from [Fe (CO) 5 ] (pentacarbonyl iron), [Fe (Cp) 2 ] (ferrocene or iron bis cyclopentadienyl), [Fe (acac) 3 ] (iron triacetylacetonate), [Mo (CO) 6 ] (molybdenum hexacarbonyl), [Mo (C 5 H 5 ) (CO) 3 ] 2 (cyclopentadienyltricarbonylmolybdenum dimer), [Mo (allyl) 4 ] (tetraallylmolybdenum), [W (CO 6 ] (tungsten hexacarbonyl), [W (C 6 He) 2 ] (tungsten bisbenzene), [W (BUt) 3 ] (tributyltungsten), [W (allyl) 4 ] (tetraallyl tungsten), [Ni (CO ) 4 ] (nickel tetra
- each precursor in the form of vapors in a gaseous mixture which is delivered continuously in a reactor containing the solid support grains and under conditions suitable for ensuring the fluidization of the support grains and the metallic deposit. atomic on grains.
- the metal deposition is carried out so as to obtain a composition as defined above.
- the solid support, the precursor (s) and the deposition time are chosen to obtain the geometric characteristics mentioned above.
- the invention also extends to a composition obtained by a process according to the invention as defined above.
- the invention extends to the use of a composition according to the invention as a solid catalyst.
- the invention thus relates to a method for carrying out a chemical reaction in the presence of at least one solid catalyst, characterized in that at least one composition according to the invention is used as solid catalyst.
- a composition of the invention can be advantageously used in any chemical reaction as a heterogeneous solid catalyst, and in particular in the context of thermal decomposition reactions in the gas phase. Nevertheless, advantageously and according to the invention, it is a dehydrogenation reaction from at least one fluid reagent.
- the invention relates to a process for manufacturing nanoparticles of material chosen from silicon, carbon, boron, nitrogen, and a mixture of these elements, characterized in that at least one composition is used according to the invention.
- invention as a solid catalyst.
- the invention is a reaction for the selective production of carbon nanotubes by thermal decomposition of a source of gaseous carbon.
- the invention more particularly relates to a process for the selective production of carbon nanotubes by decomposition of a source of carbon in the gaseous state brought into contact with at least one solid catalyst supported in the form of grains, referred to as catalyst grains. characterized in that at least one composition according to the invention (having all or some of the characteristics mentioned above) is used as solid catalyst.
- FIG. 1 is a diagram of an example of an installation for manufacturing of a composition according to the invention
- Figure 2 is a diagram of an example of an installation for the preparation of carbon nanotubes with a composition according to the invention
- Figures 3 and 4 are micrographs of the surface of the grains of a composition obtained in example 1 according to the invention
- FIG. 5 is a graph showing the distribution of the diameters of the nanotubes obtained in example 6
- FIGS. 6a and 6b are microscopic photographs at two different scales representing nanotubes obtained in Example 6.
- FIG. 1 is a diagram of an installation for implementing a method of manufacturing a divided solid catalyst composition according to the invention.
- This installation comprises a reactor, called a deposition reactor 20 for the synthesis of the catalytic composition by chemical vapor deposition (CVD), which comprises a glass sublimator 1 into which the organometallic precursor is introduced.
- This sublimator comprises a sintered plate and can be brought to the desired temperature by a heated bath 2.
- the neutral carrier gas 3, for example helium, which entrains the vapors of the organometallic precursor used is stored in a bottle and admitted to the sublimator 1 using a flow regulator (not shown).
- the sublimator 1 is connected to a lower glass compartment 4, which comprises a sintered plate, into which is introduced water vapor which serves to activate the decomposition of the organometallic precursor.
- the presence of water makes it possible to obtain a non-oxidized metal deposit (thanks to the reaction of movement of the gas with water), free of impurity, and thus a very active catalyst.
- the compartment 4 has a thermostatically controlled double jacket at a temperature that can be adjusted by means of a temperature controller (not shown).
- the steam is entrained by and with a neutral carrier gas, for example nitrogen, stored in a bottle and admitted to the compartment 4 using a flow regulator (not shown).
- a carrier gas supply 6 neutral by example of the nitrogen, is intended to adjust the flow rates so as to be in the fluidization conditions.
- This carrier gas 6 is stored in a bottle and admitted into compartment 4 using a flow regulator (not shown).
- the upper part of the compartment 4 is sealingly connected to a fluidization column 7 made of glass, for example 5 cm in diameter, which is equipped at its base with a gas distributor.
- This column 7 jacketed is thermostatically controlled at a temperature that can be adjusted by means of a temperature controller 8.
- the upper part of the column 7 is connected to a vacuum pump 9 via a trap, to retain the decomposition gases released.
- a precursor mass Ma is introduced into the sublimator 1.
- a mass Ms of support grains is poured into the column 7 and a quantity of water is introduced into the compartment 4 with the aid of a syringe (for example of the order of 20 g).
- the vacuum is made in the assembly formed of compartment 4 and column 7.
- the temperature of the bed is brought to T1.
- the sublimator 1 is brought to the temperature Ts and the pressure is set to the value Pa throughout the equipment by introducing the carrier gases 3, 5 and 6 (total flow Q). The deposit then begins and lasts a while.
- the sublimator 1 is brought to the temperature Ts and the pressure is set to the value Pa throughout the equipment by introducing the carrier gases 3, 5 and 6 (total flow Q). The deposit then begins and lasts a while.
- the temperature is brought back to ambient temperature by slow cooling and the vacuum pump 9 is stopped.
- the catalytic granular composition is removed from the column 7 under an inert gas atmosphere (for example nitrogen): it is ready to be used, for example for the manufacture of nanotubes in a growth reactor 30.
- the growth reactor 30 is composed of a quartz fluidization column (for example 2.6 cm in diameter) provided at its center with a dispensing plate (sintered in quartz) 11 on which the powder is placed. catalytic granular composition.
- the column 10 can be brought to the desired temperature by means of an oven 12 which can slide vertically vertically along the fluidization column 10.
- the oven 12 has either a high position where it does not heat not the fluidized bed, a low position where it provides heating of the bed.
- the gases 13 neutral gas such as helium, carbon source and hydrogen
- the gases 13 are stored in bottles and are admitted into the fluidization column by means of flow regulators 14.
- the fluidization column 10 is sealingly connected to a trap 15 for collecting any fine particles of catalytic granular composition or a mixture of catalytic granular composition and nanotubes.
- the height of the column 10 is adapted to contain, in operation, the fluidized bed of the catalyst grains. In particular, it is at least 10 to 20 times the gaseous height, and must correspond to the heated zone. In the examples, a column 10 with a total height of 70 cm, heated to 60 cm high by oven 12, is chosen.
- a catalyst mass Mc (catalytic granular composition according to the invention) is introduced into the fluidization column 10 under an inert gas atmosphere.
- the furnace 12 Since the furnace 12 is in a low position relative to the catalytic bed, its temperature is brought to the desired value Tn for the synthesis of the nanotubes, either under an inert gas atmosphere or under a mixture of inert gas and hydrogen ( reactive gas).
- the growth of the nanotubes then begins and lasts a time ta.
- the oven 12 is placed in the high position relative to the catalytic bed, the gas flow rates corresponding to the carbon source and to the hydrogen are stopped and the temperature is brought back to ambient temperature by slow cooling. .
- the carbon nanotubes associated with the metal particles and attached to the support grains are extracted from the growth reactor 30 and stored without any particular precautions.
- the amount of carbon deposited is measured by weighing and by gravimetric thermal analysis.
- the nanotubes thus produced are analyzed by transmission electron microscopy (TEM) and scanning electron microscopy (SEM) for size and dispersion measurements and by X-ray crystallography and Raman spectroscopy to evaluate the crystallinity of the nanotubes.
- TEM transmission electron microscopy
- SEM scanning electron microscopy
- a 40% by weight Fe / Al 2 O 3 catalyst composition is prepared by the fluidized bed CVD method described above.
- the carrier gas is nitrogen.
- the organometallic precursor is pentacarbonyl iron
- the support is mesoporous alumina- ⁇ (pore volume 0.54 cm 3 g -1 ) sieved between 120 ⁇ m and 150 ⁇ m and having a specific surface area of 160 ⁇ m. "1 -
- the composition obtained is formed of alumina particles completely covered with iron gangue consisting of iron bulb clusters of 30 nm to 300 nm ( Figures 4 and 5).
- the specific surface area (measured according to the BET method) of the final material is 8 m 2 g -1 and the XPS analyzes show that the aluminum is no longer present or accessible on the surface.
- This example is aimed at the preparation of a composition according to the invention at 75% by mass of iron on mesoporous Al 2 O 3 as indicated in Example 1, but with the following operating conditions:
- the resulting composition is formed of alumina grains completely covered with an unoxidized iron matrix.
- XPS analyzes show that aluminum is no longer present or accessible on the surface.
- This example is aimed at the preparation of a composition according to the invention at 51.5% by weight of iron on silica (SiO 2 ) by CVD in a fluidized bed as indicated above.
- the organometallic precursor used for the deposition of iron is pentacarbonyl iron [Fe (CO) 5 ]
- the support is mesoporous silica (porous volume 1.8 cm / g) sieved to have particles of sizes included between 80 ⁇ m and 120 ⁇ m and which has a specific surface area (BET method) of 320 m 2 g -1 .
- the carrier gas is nitrogen.
- the operating conditions are as follows:
- the composition obtained is formed of silica grains completely covered with an iron matrix.
- the specific surface area (BET method) of the final material is 24.1 m 2 g -1 and the XPS analyzes show that the silicon is no longer present on the surface.
- the composition obtained is formed of silica grains completely covered with an iron matrix.
- the specific surface area (BET method) of the final material is 1.8 m 2 g -1 and the XPS analyzes show that the silicon is no longer present on the surface.
- Multilayer carbon nanotubes are manufactured from the catalyst of Example 1 at 40% FeZAl 2 O 3 in an installation according to Figure 2, from ethylene gas as a carbon source.
- FIG. 5 also shows that the diameter of the nanotubes obtained is in the majority of the order of 10 nm to 25 nm, whereas the grains of the composition have a diameter of the order of 150 ⁇ m. Again, this result is surprising, inexplicable and goes against all previous teachings.
- FIGS. 6a and 6b show the high selectivity in nanotubes produced, which are thus directly usable, especially in view of the small proportion of residual porous support in the nanotubes that was necessary to eliminate in the known prior methods.
- a 20% by weight FeZAl 2 O 3 catalyst composition is prepared by the fluidized bed CVD method described above.
- the carrier gas is nitrogen.
- the organometallic precursor is pentacarbonyl iron
- the support is non-porous ⁇ -alumina (specific surface area (BET method) of 2 m 2 / g).
- the resulting composition is formed of gangue-coated alumina particles formed of iron bulb clusters completely covering the surface of the alumina with a surface composition where aluminum is absent as measured by XPS analysis.
- Multilayer carbon nanotubes are manufactured from this iron catalyst on non-porous alumina in an installation according to FIG. 2, from ethylene gas as a carbon source.
- the invention can be used to manufacture other nanoparticles than carbon nanotubes.
- NBC, Si-C, Si-CN and CN nanotubes can be produced by catalytic CVD from supported metal catalysts (see, in particular, L. Sihi, L. Chen, Z. Yang, J. Ma, Y. Qian, Carbon, 2005, 43, 195, M. Glerup, M. Castignolles, M. Holzinger, G. Hug, A. Loiseau, P. Bernier, C. Chem., 2003, 2452, HL Chang, CH Lin, CT Kuo, Diamond and related materials, 2002, 11, 793, R. Larciprete, S. Lizzit, C. Cepek. S. Botti, A. Goldoni, Surface Science 2003, 532, 886). Therefore, such nanotubes can also be produced with a catalytic composition according to the invention.
- metal deposits can be made by processes other than CVD, for example by evaporation under vacuum or other deposition in the gas phase, or electrochemically.
- a composition according to the invention can be used for other purposes, in particular as a supported catalyst for other chemical reactions (for example the thermal degradation of organic polluting gases).
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Abstract
Description
Claims
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0406803A FR2872061B1 (fr) | 2004-06-23 | 2004-06-23 | Composition solide divisee formee de grains a depot metallique atomique continu et son procede d'obtention |
| PCT/FR2005/001541 WO2006008384A1 (fr) | 2004-06-23 | 2005-06-21 | Composition solide divisee formee de grains a depot metallique continu, son procede de fabrication, et son utilisation à titre de catalyseur |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP1778891A1 true EP1778891A1 (fr) | 2007-05-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP05778656A Withdrawn EP1778891A1 (fr) | 2004-06-23 | 2005-06-21 | Composition solide divisee formee de grains a depot metallique continu, son procede de fabrication, et son utilisation à titre de catalyseur |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US7902104B2 (fr) |
| EP (1) | EP1778891A1 (fr) |
| JP (1) | JP2008503339A (fr) |
| KR (1) | KR20070048169A (fr) |
| CN (1) | CN101052743B (fr) |
| BR (1) | BRPI0512402A (fr) |
| CA (1) | CA2570590A1 (fr) |
| FR (1) | FR2872061B1 (fr) |
| WO (1) | WO2006008384A1 (fr) |
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- 2004-06-23 FR FR0406803A patent/FR2872061B1/fr not_active Expired - Fee Related
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- 2005-06-21 US US11/629,063 patent/US7902104B2/en not_active Expired - Fee Related
- 2005-06-21 JP JP2007517353A patent/JP2008503339A/ja not_active Ceased
- 2005-06-21 WO PCT/FR2005/001541 patent/WO2006008384A1/fr not_active Ceased
- 2005-06-21 CA CA002570590A patent/CA2570590A1/fr not_active Abandoned
- 2005-06-21 KR KR1020077001689A patent/KR20070048169A/ko not_active Abandoned
- 2005-06-21 CN CN2005800210136A patent/CN101052743B/zh not_active Expired - Fee Related
- 2005-06-21 BR BRPI0512402-6A patent/BRPI0512402A/pt not_active Application Discontinuation
- 2005-06-21 EP EP05778656A patent/EP1778891A1/fr not_active Withdrawn
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Also Published As
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| US20080213154A1 (en) | 2008-09-04 |
| KR20070048169A (ko) | 2007-05-08 |
| WO2006008384A1 (fr) | 2006-01-26 |
| CN101052743B (zh) | 2010-12-01 |
| FR2872061B1 (fr) | 2007-04-27 |
| BRPI0512402A (pt) | 2008-03-04 |
| US7902104B2 (en) | 2011-03-08 |
| CN101052743A (zh) | 2007-10-10 |
| JP2008503339A (ja) | 2008-02-07 |
| FR2872061A1 (fr) | 2005-12-30 |
| CA2570590A1 (fr) | 2006-01-26 |
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