EP1756644A1 - Procede pour mesurer des structures topographiques sur des composants - Google Patents

Procede pour mesurer des structures topographiques sur des composants

Info

Publication number
EP1756644A1
EP1756644A1 EP05748364A EP05748364A EP1756644A1 EP 1756644 A1 EP1756644 A1 EP 1756644A1 EP 05748364 A EP05748364 A EP 05748364A EP 05748364 A EP05748364 A EP 05748364A EP 1756644 A1 EP1756644 A1 EP 1756644A1
Authority
EP
European Patent Office
Prior art keywords
light
topographical
detected
excitation light
measurement data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP05748364A
Other languages
German (de)
English (en)
Inventor
Michael Stelzl
Volker Seidemann
Jürgen LEIB
Ha-Duong Ngo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Schott AG
Original Assignee
Schott AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schott AG filed Critical Schott AG
Publication of EP1756644A1 publication Critical patent/EP1756644A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B21/00—Microscopes
    • G02B21/0004—Microscopes specially adapted for specific applications
    • G02B21/002—Scanning microscopes
    • G02B21/0024—Confocal scanning microscopes (CSOMs) or confocal "macroscopes"; Accessories which are not restricted to use with CSOMs, e.g. sample holders
    • G02B21/0052—Optical details of the image generation
    • G02B21/0076—Optical details of the image generation arrangements using fluorescence or luminescence
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0608—Height gauges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B21/00—Microscopes

Definitions

  • the invention relates generally to the field of microscopy, in particular the measurement of topographical structures on components using confocal microscopy.
  • measuring devices In the field of semiconductor production, measuring devices are required that measure the surfaces of the components in two or three dimensions to control production steps. Among other things, it is also desirable to be able to measure and check the topography of applied lacquer layers, such as photoresist layers or insulation layers.
  • Electron microscopes or white light interferometers are suitable for this. Electron microscopes deliver very good images, but they have the disadvantage that the wafer or the component has to be destroyed.
  • BESTATIGUNGSKOPIE numerical aperture so that no light falls back into the optics from surfaces with steep angles and therefore these surfaces cannot be captured. Nor can lacquer layer thicknesses be measured.
  • JP 10019532 A2 In order to be able to measure photoresist patterns on a sample, it is known from JP 10019532 A2 to irradiate the sample with UV light through a dichroic mirror and a lens and the excited fluorescent light which emits from the photoresist on the sample and after a passage through the lens is reflected by the dichroic mirror, with an image recording device. In this way, a fluorescent image of the photoresist pattern is obtained. With this construction, however, only the lateral distribution of the photoresist is recorded.
  • JP 60257136 A2 A similar structure is also known from JP 60257136 A2.
  • the signal from the surface lying under the fluorescent film is detected.
  • the layer thickness of the reflected film can be determined from a determination of the intensity ratio of the fluorescent light and the reflected light.
  • such a device is only suitable for measuring relatively flat topographies, since the depth of focus of a conventional microscope is limited.
  • a broadband, catadioptric UV microscope is known from US Pat. No. 6,133,576.
  • a method for checking wafer surfaces is also described, by means of which the surface to be checked is recorded three-dimensionally, with scanning at the same time using light of different wavelengths.
  • the microscope is designed so that the focal plane of the light different wavelengths are at different depths, so that layers of different depths are recorded with the light of different wavelengths.
  • the respective images at different wavelengths can then be combined to form a three-dimensional image of the sample.
  • the fluorescence signal has a larger wavelength than the excitation light.
  • the wavelength range of the fluorescence signal then overlaps with that of the excitation light or fluorescent light of the same wavelength is generated for different wavelengths of the excitation light.
  • the detected light can no longer be assigned to the fluorescence or the reflection or scattering of the excitation light in the individual layers. Accordingly, the depth information is lost, so that a three-dimensional reconstruction of fluorescent structures is prone to errors.
  • the object of the invention is to enable an accurate three-dimensional measurement of fluorescent structures on wafers or components.
  • the invention provides a method for measuring three-dimensional topographical structures Wafers or components in which at least one fluorescent topographical structure is scanned with excitation light using a confocal microscope and the fluorescent light emitted from the focal point in the focal plane of the objective is detected, and fluorescence light excited by the excitation light is detected, and measurement data is obtained from the position of the focal point and the detected fluorescence signal become.
  • the method according to the invention is generally suitable for checking wafers and components with topographies, that is to say for example for checking wafers or components with micromechanical, electronic, optoelectronic and / or optical components.
  • confocal microscopy makes use of the possibility of confocal microscopy to measure topographies.
  • confocal microscopy does not use broadband, but rather monochromatic or at least essentially monochromatic light for measuring the topography of a wafer or component.
  • this enables the unambiguous assignment of the detected fluorescent light to the excitation light and the emission location, namely the focal point of the excitation light, and thus a highly precise measurement of fluorescent topographical structures in or on the wafer or component to be examined.
  • the method according to the invention in addition to the surface of the structures, the volume of these structures can also be measured.
  • confocal microscopy In contrast to electron microscopic analysis, confocal microscopy in particular also enables non-destructive measurement of the samples.
  • confocal microscopes have a more favorable numerical aperture than white light interferrometry devices.
  • the method is suitable for examining many types of three-dimensional topographic structures, such as, for example, lacquer layers, lacquer residues after photostructuring a photoresist, etched vias or dicing streets, which have been inserted into fluorescent material or are filled with fluorescent material.
  • MEMS microelectromechanical
  • MOEMS micro-opto-electromechanical
  • measurement data from three-dimensionally distributed measurement points can also be obtained. These measuring points can be distributed in such a way that one or more structures to be measured, partial areas or the complete surface of the wafer or component are recorded in their entirety and three-dimensional structure.
  • a preferred embodiment of the invention provides in particular to calculate a three-dimensional reconstruction of the topographical structure from the intensity values of the fluorescent light and assigned position values of the focal point. This can then be displayed on a screen for review and analysis, for example.
  • An advantageous further development of this embodiment further provides that additional measurement data with intensity values of reflected excitation light and assigned position values of the focal point are used to calculate the three-dimensional structure.
  • additional measurement data with intensity values of reflected excitation light and assigned position values of the focal point are used to calculate the three-dimensional structure.
  • Such a combination of a reflection and a fluorescence channel makes it easy to distinguish, for example, fluorescent lacquers on the wafer or component to be examined from materials of the substrate, such as silicon or copper.
  • the layer thickness can also be determined, for example. of the topographical structure to be checked.
  • deviations from the mean value of the layer thickness can be determined in addition to the average layer thickness.
  • the variance and the minimum and maximum values of the layer thickness can provide information about the quality and any errors in the topographical structure or the wafer or the component.
  • a scanning unit of the microscope can comprise, for example, movable scanning mirrors, a Nipkow disk and / or an acousto-optical deflector, which move one or more light beams or their focal points along a layer.
  • LSM laser scanning microscope
  • ultraviolet light As the excitation light.
  • light with wavelengths of 480 nm, 458 nm or 514 nm is suitable, which can be generated with laser light sources.
  • a three-dimensional topographical structure is measured which has at least one of the substances photoresist, BCB (benzocyclobutene), such as cycloten, and SU8 or other photostructurable epoxides.
  • BCB benzocyclobutene
  • cycloten cycloten
  • SU8 photostructurable epoxides
  • the method according to the invention can advantageously be used, for example, for measuring and checking etched vias or dicing streets in the wafer or component.
  • the substrate material itself can fluoresce and / or the via or the dicing street can be filled with fluorescent material.
  • a particular problem when checking topographical structures on wafers or components is the measurement of structures which, as a whole, cannot be seen from one direction of view because they have hidden areas. Structures of this type cannot be measured non-destructively or in a contact-free manner using methods which have been customary to date. According to a further aspect of the invention, a method is therefore also provided with which such structures can be measured.
  • the invention also provides a method for measuring three-dimensional topographical structures on wafers or components, in which at least one topographical structure is scanned with light using a confocal microscope and the light returning from the focal point in the focal plane of the objective is detected and measurement data from the position of the Focal point and the detected returning light can be obtained, areas of the structure are detected, the surface of which runs along a direction parallel to the optical axis, or which are even shadowed when the light incident parallel to the optical axis of the microscope.
  • This method can in particular also be combined with the above-described embodiments of the method according to the invention for measuring topographical structures by means of confocal fluorescence light microscopy.
  • the large numerical aperture of a confocal microscope allows such structures to be imaged and measured with extremely steep surfaces or even shadowed areas.
  • the rays of the illuminating light incident at large angles can also still illuminate those areas which are no longer reached by light incident along or parallel to the optical axis of the objective due to shadowing effects.
  • areas of the structure can be measured that are shaded or covered by another area of the structure, the wafer or the component when light is incident parallel to the optical axis of the objective.
  • the measurement data obtained for measurement with the method according to the invention can be generated from light reflected back on the surface of the structure and / or light diffusely scattered back and / or from fluorescence light generated at the focal point.
  • Detection according to the invention of very steep surfaces with a large angle of inclination to the wafer surface, in which the excitation light strikes at grazing incidence or at a shallow angle, is particularly well possible if these surfaces have sufficient roughness.
  • the detected signal is then primarily due to diffusely backscattered light.
  • Shaded areas that can be measured according to the invention can include, for example, back-etching, as often occurs in etched structures.
  • FIG. 1 is a schematic view of a confocal microscope for performing the method according to the invention
  • FIG. 2A shows a microscope image of the reflection signal of a lacquer structure on a wafer
  • FIG. 2B shows a microscope image of the fluorescence signal of the lacquer structure
  • FIG. 3 shows a three-dimensional reconstruction of a further lacquer structure
  • FIG. 4 shows a three-dimensional reconstruction of a region of a wafer surface
  • FIG. 6 height measurement values along the section along the line AA in FIG. 4
  • FIG. 7 measurement values along a section through a wafer with a etched via.
  • a confocal microscope 1 shows a schematic view of a confocal LSM, designated as a whole by the reference number 1, as is suitable for carrying out the method according to the invention for measuring three-dimensional topographic structures on wafers or components.
  • a confocal microscope 1 typically comprises a laser 5 as an illumination source.
  • Ultraviolet light sources such as UV lasers are particularly suitable for exciting fluorescence from organic materials.
  • a photomultiplier tube 7 is provided for the detection of the fluorescent light excited by the laser light.
  • the light from the laser 5 is coupled into the optical axis of the microscope 1 via a dichroic mirror 8.
  • the dichroic mirror 8 can be replaced by a beam splitter 8 'which is transparent to the light coming from the sample.
  • a fluorescent topographical structure 22 is scanned with the excitation light and the fluorescence light excited by the excitation light and emitted from the focal point 17 in the focal plane 17 of the objective is detected. Measurement data are then obtained from the position of the focal point 19 and the detected fluorescence signal and recorded.
  • two confocal diaphragms 9 and 11 for the laser light or the light reflected or emitted by the sample to be examined are provided in the beam path of the microscope.
  • a wafer 2 is shown as a sample, on the surface 21 of which the fluorescent topographical structure 22 to be measured is arranged.
  • the structure 22 and optionally the wafer surface 21 are scanned with the confocal microscope 1 in layers along the focal plane 19 in the xy direction.
  • the layers are scanned by rasterizing the excitation light by means of a scanning unit 13.
  • the layers can be scanned, for example, by means of moving scanning mirrors, a rotating Nipkow disk or an acousto-optical deflector as components of the scanning unit 13.
  • a plurality of layers lying one above the other in the z direction can be recorded, so that measurement data are obtained from three-dimensionally distributed measurement points, so that a three-dimensional reconstruction of the structure 22 and the wafer surface can be calculated.
  • the focal plane 19 is shifted relative to the topographical structure 22 along the optical axis 16 of the objective 15 of the microscope 1, the focal plane 19 being shifted by shifting the wafer 2 along the z direction.
  • a three-dimensional reconstruction of the topographical structure 22 is finally calculated from the intensity values of the fluorescent light and assigned known position values of the focal point by means of a computer 25.
  • the computer is connected via lines 27, 29 to the scan unit 13 and the photomultiplier tube 7, so that the intensity values detected by the photomultiplier tube 7 are transmitted to the computer and the scan Unit and thus the location of the focal point 17 in the focal plane 19 can be controlled.
  • measurement data with intensity values of reflected excitation light and associated position values of the focal point 19 can also be used to calculate the three-dimensional structure.
  • the layers can be scanned in succession with the detection of fluorescence and reflected excitation light.
  • fluorescence light and reflected excitation light can also be detected simultaneously in a configuration deviating from FIG. 1 by means of an additional beam splitter and detector.
  • FIGS. 2A and 2B show images of a lacquer structure on a wafer, which were taken with a confocal microscope. The images each represent the measured values from a two-dimensional layer along the focal plane of the objective.
  • FIG. 2A shows a microscope image of the reflection signal of the lacquer structure
  • FIG. 2B shows a microscope image of the fluorescence signal of the same lacquer structure.
  • the combination of such recordings, or generally a combination of a reflection and a fluorescence channel makes it easy to distinguish fluorescent coatings from substrate materials such as silicon or copper. In this way, for example, remaining paint residues in structures can be made visible. For example, in the paint structure shown in FIGS. 2A and 2B, paint residues still remain in the circular, paint-free part after the photostructuring.
  • FIG. 3 shows a three-dimensional reconstruction of a topographical structure on a wafer.
  • the structure is a portion of a lacquer layer 30 that has been applied to a structured surface of the wafer.
  • the structure of the wafer is such that it has a recess with sloping edges.
  • Such structures exist, for example, in the case of etched vias or etched or ground dicing streets.
  • the section of the lacquer layer 30 shown in FIG. 3 shows an area which extends over the upper edge of the depression. The edge of the depression is marked with K, the sloping flank with F.
  • the measured values for the three-dimensional reconstruction of the lacquer layer 30 were obtained by scanning the lacquer layer 30 and detecting the fluorescence light emitted from the focal point of the objective and excited by the excitation light.
  • the measurement points for determining the measurement data were distributed three-dimensionally, the measurement values being recorded by scanning layers one above the other along the focal plane.
  • the wafer material can be easily distinguished from the lacquer layer. 3, a clean reconstruction of the lacquer layer 30 can thus be calculated. The material of the base or the wafer cannot be seen in the reconstruction.
  • the measured lacquer layer 30 of this exemplary embodiment is a BCB insulation layer on a wafer. Similar good results in three-dimensional reconstruction can also be achieved with other organic materials that are used in semiconductor production, such as photoresist or a photostructurable epoxy, for example SU8. BCB shows maximum absorption at 335 nm wavelength in the ultraviolet range. For many other organic materials, however, excitation light with wavelengths of 480 nm, 458 nm or 514 nm is also suitable. The maximum intensity of the emission of fluorescent light from BCB is at 390 nm wavelength.
  • micromechanical components as components of a wafer or component.
  • These can, for example, be worked out from or placed on the wafer material.
  • One way of producing micromechanical components is to photostructure plastic layers from suitable plastics.
  • photostructurable epoxides, in particular SU8, are suitable.
  • MEMS or MOEMS components of this type can be used with the method according to the invention Measurement of the fluorescence signal can be measured and reconstructed.
  • FIG. 4 shows a three-dimensional reconstruction of an area of a wafer surface 21.
  • the wafer lies in the xy plane.
  • FIG. 5 shows a cut-away view in the yz plane along the line A-A of the reconstruction shown in FIG. 4. 6 also shows a graph with height measurement values measured along the section.
  • the region of the wafer surface 21 shown in FIGS. 4 and 5 has a recess 31 and a trench 33, the trench 33 being shown only half way.
  • the depression 31 is an etched via hole and the trench 33 is a dicing street along which the individual dies can be separated after the wafer has been completed.
  • the structures 31, 33 were each etched up to an etch stop layer from the side 21 of the wafer. The etch stop layer can be recognized in both structures 31, 33 as a flat bottom region 34 of the vias 31 and the trench 33.
  • Both structures can be produced, for example, by etching.
  • the structures 31, 33 have extremely steep surfaces with respect to the xy plane in which the wafer lies, the regions 35 even lying perpendicular to the xy plane or parallel to the optical axis of the microscope lying in the z direction.
  • the measured values of the topography of the wafer surface shown in FIGS. 4 to 6 were obtained according to the invention by using a confocal microscope, as is the case For example, shown in Fig. 1, the shown area of the wafer surface 21 with the topographical structures 31, 33 is scanned with light and the light returning from the focal point in the focal plane of the lens is detected, with measurement data from the position of the focal point and the detected returning Light can be gained.
  • the method according to the invention works particularly well when the steep surfaces have a high roughness, so that a lot of light is reflected from the focal point back into the lens and can be detected.
  • it is also possible to measure the topographical structures by detecting fluorescent light from the focal point.
  • the structures of the wafer surface can be covered, for example, with fluorescent material.
  • the topographical structures can then also be reconstructed from a reconstruction of the fluorescent material.
  • the underside of the reconstruction of the lacquer layer shown in FIG. 3 represents an image of the surface of the wafer.
  • FIG. 7 shows a further example with measured values that were recorded along a section through a wafer with an etched via 31.
  • the via was also etched up to an etching stop layer, so that the via has a flat bottom region 34.
  • Via 31 also has an undercut. This results in a protruding region 39 of the wafer surface 21. If the wafer is arranged for measurement in the usual way so that its surface 21 is perpendicular to is the optical axis of the lens of the confocal microscope, the area 39 causes shading of areas 37 of the surface of the via 31 with respect to light which is incident along a direction 41 parallel to the optical axis of the lens.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Microscoopes, Condenser (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

Pour permettre la mesure sans endommagement, de topographies sur des tranches de semi-conducteur ou des composants, l'invention a pour objet un procédé pour mesurer des structures topographiques tridimensionnelles (22) sur des tranches de semi-conducteur (2) ou des composants, le procédé comprenant les étapes suivantes : un microscope confocal (1) est utilisé pour détecter au moins une structure topographique fluorescente (22) avec de la lumière d'excitation ; la lumière fluorescente qui est émise par le point focal (17) dans le plan focal (19) de l'objectif (15), et excitée par la lumière d'excitation, est détectée ; et des données de mesure sont obtenues à partir de l'emplacement du point focal (17) et du signal de fluorescence détecté.
EP05748364A 2004-05-17 2005-05-13 Procede pour mesurer des structures topographiques sur des composants Withdrawn EP1756644A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004024785A DE102004024785A1 (de) 2004-05-17 2004-05-17 Verfahren zur Vermessung topographischer Strukturen auf Bauelementen
PCT/EP2005/005281 WO2005114290A1 (fr) 2004-05-17 2005-05-13 Procede pour mesurer des structures topographiques sur des composants

Publications (1)

Publication Number Publication Date
EP1756644A1 true EP1756644A1 (fr) 2007-02-28

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EP05748364A Withdrawn EP1756644A1 (fr) 2004-05-17 2005-05-13 Procede pour mesurer des structures topographiques sur des composants

Country Status (7)

Country Link
US (1) US20080144006A1 (fr)
EP (1) EP1756644A1 (fr)
JP (1) JP2007538238A (fr)
KR (1) KR20070033999A (fr)
CN (1) CN1997926A (fr)
DE (1) DE102004024785A1 (fr)
WO (1) WO2005114290A1 (fr)

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WO2005114290A1 (fr) 2005-12-01
US20080144006A1 (en) 2008-06-19
KR20070033999A (ko) 2007-03-27
JP2007538238A (ja) 2007-12-27
DE102004024785A1 (de) 2005-12-15
CN1997926A (zh) 2007-07-11

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