EP1754689B1 - Substrat aus synthetischem Quarzglas für Excimerlaser und das Herstellungsverfahren - Google Patents
Substrat aus synthetischem Quarzglas für Excimerlaser und das Herstellungsverfahren Download PDFInfo
- Publication number
- EP1754689B1 EP1754689B1 EP06254225A EP06254225A EP1754689B1 EP 1754689 B1 EP1754689 B1 EP 1754689B1 EP 06254225 A EP06254225 A EP 06254225A EP 06254225 A EP06254225 A EP 06254225A EP 1754689 B1 EP1754689 B1 EP 1754689B1
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- EP
- European Patent Office
- Prior art keywords
- quartz glass
- synthetic quartz
- glass substrate
- block
- transmittance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims description 199
- 239000000758 substrate Substances 0.000 title claims description 108
- 238000000034 method Methods 0.000 title claims description 37
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 50
- 239000010453 quartz Substances 0.000 claims description 27
- 238000010438 heat treatment Methods 0.000 claims description 16
- 230000005855 radiation Effects 0.000 claims description 15
- 238000000137 annealing Methods 0.000 claims description 8
- 239000012298 atmosphere Substances 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 7
- 238000007493 shaping process Methods 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 6
- 239000005347 annealed glass Substances 0.000 claims 1
- 238000002834 transmittance Methods 0.000 description 45
- 239000001257 hydrogen Substances 0.000 description 26
- 229910052739 hydrogen Inorganic materials 0.000 description 26
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 12
- 239000001301 oxygen Substances 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 12
- 239000000377 silicon dioxide Substances 0.000 description 12
- 239000007789 gas Substances 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 238000010521 absorption reaction Methods 0.000 description 10
- 230000007547 defect Effects 0.000 description 10
- 230000008859 change Effects 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 238000009826 distribution Methods 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 7
- 239000007858 starting material Substances 0.000 description 7
- 238000001816 cooling Methods 0.000 description 6
- 239000010419 fine particle Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- 230000001678 irradiating effect Effects 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- -1 sodium Chemical class 0.000 description 5
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- 229910002808 Si–O–Si Inorganic materials 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 239000005055 methyl trichlorosilane Substances 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 238000002798 spectrophotometry method Methods 0.000 description 4
- 125000001931 aliphatic group Chemical group 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000007062 hydrolysis Effects 0.000 description 3
- 238000006460 hydrolysis reaction Methods 0.000 description 3
- 238000000671 immersion lithography Methods 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 239000004071 soot Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000001069 Raman spectroscopy Methods 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000009877 rendering Methods 0.000 description 2
- 230000000452 restraining effect Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 description 1
- 125000006656 (C2-C4) alkenyl group Chemical group 0.000 description 1
- 125000005913 (C3-C6) cycloalkyl group Chemical group 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- XMSXQFUHVRWGNA-UHFFFAOYSA-N Decamethylcyclopentasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 XMSXQFUHVRWGNA-UHFFFAOYSA-N 0.000 description 1
- 206010012335 Dependence Diseases 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910003849 O-Si Inorganic materials 0.000 description 1
- 229910003872 O—Si Inorganic materials 0.000 description 1
- 229910008045 Si-Si Inorganic materials 0.000 description 1
- 229910003910 SiCl4 Inorganic materials 0.000 description 1
- 229910006411 Si—Si Inorganic materials 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000000567 combustion gas Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000005056 compaction Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 238000007730 finishing process Methods 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- HTDJPCNNEPUOOQ-UHFFFAOYSA-N hexamethylcyclotrisiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O1 HTDJPCNNEPUOOQ-UHFFFAOYSA-N 0.000 description 1
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000006864 oxidative decomposition reaction Methods 0.000 description 1
- 230000005298 paramagnetic effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000013074 reference sample Substances 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
- C03B19/1469—Means for changing or stabilising the shape or form of the shaped article or deposit
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
- C03B19/1415—Reactant delivery systems
- C03B19/1423—Reactant deposition burners
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
- C03B19/1453—Thermal after-treatment of the shaped article, e.g. dehydrating, consolidating, sintering
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/06—Glass compositions containing silica with more than 90% silica by weight, e.g. quartz
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C4/00—Compositions for glass with special properties
- C03C4/0071—Compositions for glass with special properties for laserable glass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2201/00—Type of glass produced
- C03B2201/06—Doped silica-based glasses
- C03B2201/20—Doped silica-based glasses doped with non-metals other than boron or fluorine
- C03B2201/21—Doped silica-based glasses doped with non-metals other than boron or fluorine doped with molecular hydrogen
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2207/00—Glass deposition burners
- C03B2207/04—Multi-nested ports
- C03B2207/06—Concentric circular ports
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2207/00—Glass deposition burners
- C03B2207/20—Specific substances in specified ports, e.g. all gas flows specified
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2207/00—Glass deposition burners
- C03B2207/20—Specific substances in specified ports, e.g. all gas flows specified
- C03B2207/22—Inert gas details
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2207/00—Glass deposition burners
- C03B2207/30—For glass precursor of non-standard type, e.g. solid SiH3F
- C03B2207/32—Non-halide
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2207/00—Glass deposition burners
- C03B2207/30—For glass precursor of non-standard type, e.g. solid SiH3F
- C03B2207/34—Liquid, e.g. mist or aerosol
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2201/00—Glass compositions
- C03C2201/06—Doped silica-based glasses
- C03C2201/20—Doped silica-based glasses containing non-metals other than boron or halide
- C03C2201/21—Doped silica-based glasses containing non-metals other than boron or halide containing molecular hydrogen
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Thermal Sciences (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Glass Compositions (AREA)
Claims (9)
- Verfahren zur Herstellung eines synthetischen Quarzglassubstrats, das zur Verwendung mit Excimer-Lasern geeignet ist, folgende Schritte umfassend:(i) Warmformen eines synthetischen Quarzglasblocks bei einer Temperatur im Bereich von 1.700 bis 1.900 °C zu einem Block mit gewünschter Form,(ii) Tempern des synthetischen Quarzglasblocks bei einer Temperatur im Bereich von 1.000 bis 1.300 °C,(iii) Schneiden des getemperten synthetischen Quarzglasblocks, um eine Substratscheibe mit gewünschter Dicke herzustellen,(iv) Wärmebehandeln der synthetischen Quarzglassubstratscheibe in Luft oder in Inertgasatmosphäre in einem Atmosphärendruckofen bei einer Temperatur im Bereich von 700 bis 1.300 °C und(v) Polieren der synthetischen Quarzglassubstratscheibe;wobei das synthetische Quarzglas mit Ultraviolettstrahlung bestrahlt wird, entweder als heißer geformter oder getemperter Glasblock oder zwischen der Wärmebehandlung (iv) und dem Polieren (v) der Scheibe.
- Verfahren nach Anspruch 1, wobei der getemperte Block vor dem Schneiden eine Wasserstoffmolekülkonzentration von 5 x 1017 bis 1 x 1019 Moleküle/cm3 aufweist.
- Verfahren nach Anspruch 1 oder 2, wobei die Wärmebehandlung (iv) der synthetischen Quarzglassubstratscheibe 5 bis 24 Stunden lang dauert.
- Verfahren nach einem der vorangegangenen Ansprüche, wobei für die Wärmebehandlung (iv) ein Stoß der Substratscheiben in eine hochreine Quarzröhre gegeben wird.
- Verfahren nach einem der vorangegangenen Ansprüche, wobei die Bestrahlung mit Ultraviolettstrahlung eine 12- bis 60-stündige Bestrahlung der synthetischen Quarzglassubstratscheibe ist.
- Verfahren nach einem der vorangegangenen Ansprüche, wobei die Stärke der Ultraviolettstrahlung zumindest 1 µW/cm2 ist.
- Verfahren nach einem der vorangegangenen Ansprüche, wobei das resultierende Substrat eine Wasserstoffmolekülkonzentration von 5 x 1015 bis 5 x 1017 Moleküle/cm3 aufweist.
- Verfahren nach einem der vorangegangenen Ansprüche, wobei die synthetische Quarzglassubstratscheibe eine Dicke von nicht mehr als 40 mm aufweist.
- Verfahren nach Anspruch 8, wobei die synthetische Quarzglassubstratscheibe eine Dicke von bis zu 10 mm aufweist.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005232852 | 2005-08-11 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP1754689A1 EP1754689A1 (de) | 2007-02-21 |
| EP1754689B1 true EP1754689B1 (de) | 2012-04-18 |
Family
ID=37533535
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP06254225A Active EP1754689B1 (de) | 2005-08-11 | 2006-08-11 | Substrat aus synthetischem Quarzglas für Excimerlaser und das Herstellungsverfahren |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US20070049482A1 (de) |
| EP (1) | EP1754689B1 (de) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090056381A1 (en) * | 2007-08-30 | 2009-03-05 | Mueller Michael A | Fused silica article loaded with deuterium and method of making |
| DE102007056511A1 (de) | 2007-11-22 | 2009-05-28 | Bayer Materialscience Ag | Verfahren zur Herstellung aromatischer Diisocyanate in der Gasphase |
| DE102008061686A1 (de) | 2008-12-11 | 2010-06-17 | Bayer Materialscience Ag | Verfahren zur Herstellung von Isocyanaten in der Gasphase |
| DE102008063728A1 (de) | 2008-12-18 | 2010-06-24 | Bayer Materialscience Ag | Verfahren zur Herstellung von Isocyanaten in der Gasphase |
| DE102008063991A1 (de) | 2008-12-19 | 2010-06-24 | Bayer Materialscience Ag | Verfahren zur Herstellung von Isocyanaten in der Gasphase |
| DE102009032414A1 (de) | 2009-07-09 | 2011-01-13 | Bayer Materialscience Ag | Verfahren zur Herstellung von Isocyanaten in der Gasphase |
| CN102320724A (zh) * | 2011-09-08 | 2012-01-18 | 北京金格兰石英玻璃有限公司 | 光掩膜版用方形石英玻璃基片的制备方法 |
| US8857214B2 (en) * | 2011-11-18 | 2014-10-14 | Sunedison Semiconductor Limited | Methods for producing crucibles with a reduced amount of bubbles |
| DE102012000418A1 (de) * | 2011-12-23 | 2013-06-27 | J-Plasma Gmbh | Verfahren zum Herstellen von Stablinsen und Vorrichtung hierfür |
| JP6439723B2 (ja) * | 2016-03-09 | 2018-12-19 | 信越化学工業株式会社 | 合成石英ガラス基板の製造方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH01212247A (ja) | 1988-02-19 | 1989-08-25 | Shinetsu Sekiei Kk | レーザ光学系母材の製造方法 |
| KR0165695B1 (ko) * | 1991-06-29 | 1998-12-15 | 아이하라 테루히코 | 엑시머레이저용 합성석영유리 광학부재 및 그의 제조방법 |
| JP2762188B2 (ja) | 1991-11-30 | 1998-06-04 | 信越石英株式会社 | 紫外線レーザー用合成石英ガラス成形体の製造方法 |
| US5702495A (en) * | 1993-02-10 | 1997-12-30 | Nikon Corporation | Silica glass member for UV-lithography, method for silica glass production, and method for silica glass member production |
| JP2859095B2 (ja) | 1993-07-30 | 1999-02-17 | 信越化学工業株式会社 | エキシマレーザリソグラフィー用合成石英マスク基板 |
| JP3259460B2 (ja) | 1993-08-26 | 2002-02-25 | 株式会社ニコン | 耐紫外線性を有する石英ガラスの製造方法および石英ガラス光学部材 |
| JP3674793B2 (ja) * | 1995-10-31 | 2005-07-20 | 信越石英株式会社 | 紫外線レーザ用石英ガラス光学部材の製造方法 |
| EP0972753B1 (de) * | 1998-07-15 | 2004-03-03 | Kitagawa Industries Co., Ltd. | Quarzglas, optisches Element und gegen ultraviolette und radioaktive Strahlung resistente faseroptische Vorrichtung, und Herstellungsverfahren dafür |
| JP2000143258A (ja) * | 1998-09-10 | 2000-05-23 | Shinetsu Quartz Prod Co Ltd | ＡｒＦエキシマレ―ザ―リソグラフィ―用合成石英ガラスの製造方法 |
| WO2000024685A1 (en) * | 1998-10-28 | 2000-05-04 | Asahi Glass Company Ltd. | Synthetic quartz glass and method for production thereof |
| JP4601022B2 (ja) | 1999-03-04 | 2010-12-22 | 信越石英株式会社 | ＡｒＦエキシマレーザーリソグラフィー用合成石英ガラス部材 |
| JP4493060B2 (ja) * | 1999-03-17 | 2010-06-30 | 信越石英株式会社 | エキシマレーザー用光学石英ガラスの製造方法 |
| US6578382B2 (en) * | 2000-03-29 | 2003-06-17 | Heraeus Quarzglas Gmbh & Co. Kg | Synthetic quartz glass for optical use, heat treatment method and heat treatment apparatus for the same |
| JP2005504699A (ja) * | 2001-09-27 | 2005-02-17 | コーニング インコーポレイテッド | 内部透過率が高く、複屈折が低い石英ガラス |
| WO2003027033A1 (en) * | 2001-09-27 | 2003-04-03 | Corning Incorporated | Improved methods and furnaces for fused silica production |
| US20040162211A1 (en) * | 2001-09-27 | 2004-08-19 | Domey Jeffrey J. | Fused silica having high internal transmission and low birefringence |
| AU2003221105A1 (en) * | 2002-03-25 | 2003-10-08 | Nikon Corporation | Synthetic quartz glass member and process for producing the same |
| US20050132749A1 (en) * | 2003-12-05 | 2005-06-23 | Shin-Etsu Chmeical Co., Ltd. | Burner and method for the manufacture of synthetic quartz glass |
| US7506522B2 (en) * | 2004-12-29 | 2009-03-24 | Corning Incorporated | High refractive index homogeneity fused silica glass and method of making same |
-
2006
- 2006-08-10 US US11/501,887 patent/US20070049482A1/en not_active Abandoned
- 2006-08-11 EP EP06254225A patent/EP1754689B1/de active Active
-
2009
- 2009-04-02 US US12/417,466 patent/US7954340B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US20090188281A1 (en) | 2009-07-30 |
| US20070049482A1 (en) | 2007-03-01 |
| EP1754689A1 (de) | 2007-02-21 |
| US7954340B2 (en) | 2011-06-07 |
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