EP1754240A2 - Dispositif pour produire et emettre un rayonnement xuv - Google Patents

Dispositif pour produire et emettre un rayonnement xuv

Info

Publication number
EP1754240A2
EP1754240A2 EP05774756A EP05774756A EP1754240A2 EP 1754240 A2 EP1754240 A2 EP 1754240A2 EP 05774756 A EP05774756 A EP 05774756A EP 05774756 A EP05774756 A EP 05774756A EP 1754240 A2 EP1754240 A2 EP 1754240A2
Authority
EP
European Patent Office
Prior art keywords
layer
target
base body
xuv radiation
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP05774756A
Other languages
German (de)
English (en)
Inventor
Alfred Reinhold
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Comet GmbH
Original Assignee
Comet GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Comet GmbH filed Critical Comet GmbH
Publication of EP1754240A2 publication Critical patent/EP1754240A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00—X-ray tubes
    • H01J35/02—Details
    • H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
    • H01J35/08—Anodes; Anti cathodes
    • H01J35/12—Cooling non-rotary anodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2235/00—X-ray tubes
    • H01J2235/08—Targets (anodes) and X-ray converters
    • H01J2235/081—Target material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2235/00—X-ray tubes
    • H01J2235/08—Targets (anodes) and X-ray converters
    • H01J2235/088—Laminated targets, e.g. plurality of emitting layers of unique or differing materials

Definitions

  • the invention relates to a device of the type mentioned in the preamble of claim 1 for generating and emitting XUV radiation.
  • XUV (Extreme Ultraviolet) radiation is understood to mean radiation in a wavelength range between approximately 0.25 and approximately 20 n. Such XUV radiation is used, for example, in optical lithography processes in the mass production of semiconductor chips.
  • a device and a method for generating XUV radiation are known from WO 2004/023512 A1.
  • the device known from the publication has a target which consists of a material which emits XUV radiation when it hits electrically charged particles.
  • the publication suggests forming the target in particular from silicon or beryllium.
  • beryllium is disadvantageous in that the XUV radiation emitted by beryllium is not monochromatic.
  • the emitted XUV radiation is at least approximately monochromatic.
  • a major disadvantage of using silicon or other semiconductors as the target material is, however, that the target may become electrically charged. It is formed then possibly uncontrolled discharges that hinder or make a controlled generation of XUV radiation impossible.
  • a similar device for generating XUV radiation is also known from US 3,138,729.
  • EP 0 887 639 A1 discloses the use of beryllium as the target material.
  • Devices for generating x-rays are known from US Pat. No. 3,793,549 and GB 1057284. US Pat. No.
  • 4,523,327 discloses a device of the type in question for generating and emitting XUV radiation, which has a target that emits XUV radiation when it hits electrically charged particles.
  • the target has a base body which is at least partially provided with a first layer which contains a material which emits XUV radiation when electrically charged particles hit it.
  • the base body can be made of copper, for example
  • Form for example, is partially coated with silicon.
  • the invention has for its object to provide a device of the type mentioned in the preamble of claim 1, which is improved compared to the known device. This object is achieved by the teaching specified in claim 1. According to the invention, in addition to the first layer, the one which is electrically charged when struck
  • a second layer which contains a material of high electrical conductivity.
  • This second layer does the job derive electrically charged particles impinging on the target and thus prevent permanent charging of the target.
  • the material with high electrical conductivity is applied to the base body in the form of a layer, it is fundamentally no longer necessary to form the base body itself from a material with high electrical conductivity.
  • the material of the base body can thus be selected within wide limits in accordance with the respective requirements, the mechanical properties of this material predominantly being important, for example in order to ensure adequate cooling and mechanical stability of the target. In particular, this makes it possible to manufacture the base body of the target from a material that is less expensive than the material of the second layer.
  • the shape, size and material of the base body can be selected within wide limits.
  • the base body can in particular consist of metal in order to simultaneously ensure sufficient cooling and high mechanical stability of the
  • the second layer is arranged between the base body and the first layer.
  • the XUV radiation-emitting layer can in particular be arranged on the surface of the target, while the second layer is arranged between the base body and the first layer, so that the electrically charged particles strike the XUV radiation-emitting layer directly.
  • the first layer can also be arranged between the base body and the second layer.
  • the second layer can form the surface of the base body, the layer thickness of the second layer then being selected such that an impact of the electrically charged particles on the XUV radiation-emitting layer is ensured.
  • the first layer can contain a single material which emits XUV radiation when electrically charged particles strike it.
  • the first layer can also contain several different materials that emit XUV radiation when electrically charged particles strike it, or can consist of such materials.
  • the first layer can contain, for example, niobium, carbon, nitrogen, scandium or oxygen.
  • a particularly preferred development of the teaching according to the invention provides that the first layer contains beryllium and / or molybdenum and / or silicon and / or at least one silicon compound, in particular a silicon nitride and / or a silicon carbide and / or metal-dosed silicon, or at least one of the aforementioned materials.
  • the second layer contains at least one metal, in particular copper, or consists of at least one metal, in particular copper.
  • Metals are available as inexpensive materials with high electrical conductivity. In principle, it is sufficient if the target of the device according to the invention consists of a base body and at least two layers, namely the first
  • the base body can be provided with more than two layers.
  • the first layer and the layer provided for the second layer can consist of a material that emits XUV radiation when electrically charged particles hit it, or a material with high electrical conductivity.
  • a third layer is provided for influencing the spectral composition of the XUV radiation emitted by the target.
  • the third layer forms a filter layer for spectral filtering of the emitted XUV radiation.
  • the first layer has a layer thickness of approximately 0.5-2 ⁇ m and / or that the second layer has a layer thickness of approximately 500-1000 ⁇ m.
  • a layer thickness of the first layer of 0.5-2 ⁇ m is particularly preferred. Surprisingly, with such a layer thickness, an optimal compromise is obtained between the yield of XUV radiation on the one hand and an electrical discharge of the electrons on the other.
  • the second layer not only dissipates electrons in the required manner, but also serves to dissipate heat.
  • a further development of the teaching according to the invention provides that, in particular, at least a fourth layer is provided between the second layer and the base body, which layer contains a material with high thermal conductivity. In this embodiment, heat is dissipated through the fourth layer so that the function of the second layer is essentially to dissipate electrons.
  • the fourth layer can preferably be made of diamond or the like Chen exist and / or have a layer thickness of about 500-1000 microns. Since in the above-mentioned embodiments the second layer can essentially serve to discharge electrons, the second layer in these embodiments can be made very thin. The second layer preferably has a layer thickness of approximately 5-10 ⁇ m.
  • a target according to the invention is specified in claim 14. Advantageous and expedient developments of the target according to the invention are specified in subclaims 15 to 22. The invention is explained in more detail below with reference to the attached, highly schematic drawing, in which an exemplary embodiment of a device according to the invention and a target according to the invention are shown. All of the features described or shown in the drawing, alone or in any combination, form the subject matter of the invention, regardless of their summary in the patent claims or their relationships, and regardless of their formulation or representation in the description or in the drawing.
  • FIG. 1 shows a highly schematic side view of a device according to the invention with a target according to the invention
  • FIG. 2 shows a section through a first exemplary embodiment of a target according to the invention in a highly schematic manner to illustrate the layer sequence
  • FIG. 3 shows the same representation as FIG second embodiment of a target according to the invention.
  • FIG. 1 shows an exemplary embodiment of a device 2 according to the invention for generating and emitting XUV radiation, which has a target 4 according to the invention, which is explained in more detail below with reference to FIG. 2.
  • the device 2 has a filament 6 through which a heating current flows when the device 2 according to the invention is in operation, from which electrons emerge when the device 2 is operating in a manner known to the person skilled in the art.
  • the filament 6 is surrounded by a Wehnelt cylinder 8.
  • the electron current emanating from the filament 6 is accelerated through an annular anode 10 in the direction of the target 4.
  • a high-voltage source 12 which lies with its negative high-voltage pole on the cathode unit formed by the heating filament 6 and the Wehnelt cylinder 8.
  • the cathode unit can also have a field emission cathode or a Schottky cathode instead of the filament.
  • the positive pole of the high voltage source 12 is connected to the anode 10 and the target 4 and is grounded. The acceleration of the electrons emitted by the filament therefore takes place between the cathode unit and the anode 10. After passing through the annular anode 10, the electrons move towards the target 4, where they are braked.
  • the components of the device 2 are arranged in a vacuum tube 14, as is generally known to the person skilled in the art of X-ray tubes.
  • the target 4 emits XUV radiation when the electron current strikes it, as in FIG.
  • FIG. 2 shows a highly schematic section through a first exemplary embodiment of a target 4 according to the invention, which has a base body 18 which is provided with a first layer 20 which, in this exemplary embodiment, forms the surface of the target 4 facing the electron current and XUV radiation is emitted when the electrons strike.
  • the first layer 20 consists of silicon.
  • a second layer 22 is provided, which consists of a material with high electrical conductivity and is arranged between the base body 18 and the first layer 20 in this exemplary embodiment.
  • the second layer 22 consists of copper, while the base body 18 consists of aluminum, the first layer 20 having a layer thickness of approximately 0.5-2 ⁇ m and the second layer having a layer thickness of approximately 1000 ⁇ m.
  • the first layer 20 is used to generate the XUV radiation, while the second layer 22 prevents, due to its high electrical conductivity, -
  • the properties of the first layer 20 electrically charge the surface of the target 4, which would impair or prevent a controlled generation of XUV radiation.
  • the second layer is used for heat dissipation in this exemplary embodiment.
  • the base body 18 serves primarily as a mechanical support for the layers 20, 22.
  • the functioning of the device 2 according to the invention is as follows: During operation, the electrons emerging from the heating filament 6 and bundled by the Wehnelt cylinder 8 into an electron stream are transferred by means of of the high-voltage source 12 accelerates toward the target 4. When it hits the first layer 20 of the target 4, the latter emits XUV radiation 16 in the desired manner. The electrons from the first layer are emitted by the second layer 22 which is in contact with the first layer 20 and which has a high electrical conductivity according to the invention 20 derived, so that a permanent electrical charge of the first layer 20 is reliably prevented.
  • Fig. 3 a second embodiment of a target 4 according to the invention is shown, which differs from the embodiment of FIG.
  • a fourth layer 25 is arranged between the second layer 22 and the base body 18, which in this embodiment consists of a Material with high thermal conductivity, namely made of diamond and with a layer thickness of 500-1000 ⁇ m. Since the heat is dissipated via the fourth layer 25, the dimensioning of the second layer 25 can only be carried out with a view to its function of dissipating electrons. For this it is reaching, when the second layer 22, a S chichtdicke of 5-10 microns has.

Abstract

La présente invention concerne un dispositif (2) pour produire et émettre un rayonnement XUV, ledit dispositif présentant une cible (4) qui, lorsqu'elle est frappée par des particules chargées électriquement, émet un rayonnement XUV, la cible (4) présentant un corps de base (18) qui est recouvert au moins partiellement d'une première couche (20) qui contient une matière qui émet un rayonnement XUV lorsqu'elle est frappée par des particules chargées électriquement. Selon l'invention, en plus de la première couche (20), est présente au moins une seconde couche (22) qui contient une matière de conductivité électrique supérieure.
EP05774756A 2004-05-27 2005-05-04 Dispositif pour produire et emettre un rayonnement xuv Withdrawn EP1754240A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004025997A DE102004025997A1 (de) 2004-05-27 2004-05-27 Einrichtung zur Erzeugung und Emission von XUV-Strahlung
PCT/EP2005/004843 WO2005119729A2 (fr) 2004-05-27 2005-05-04 Dispositif pour produire et emettre un rayonnement xuv

Publications (1)

Publication Number Publication Date
EP1754240A2 true EP1754240A2 (fr) 2007-02-21

Family

ID=35433081

Family Applications (1)

Application Number Title Priority Date Filing Date
EP05774756A Withdrawn EP1754240A2 (fr) 2004-05-27 2005-05-04 Dispositif pour produire et emettre un rayonnement xuv

Country Status (6)

Country Link
US (1) US20070108396A1 (fr)
EP (1) EP1754240A2 (fr)
JP (1) JP2008500686A (fr)
CN (1) CN1981361A (fr)
DE (1) DE102004025997A1 (fr)
WO (1) WO2005119729A2 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008007413A1 (de) * 2008-02-04 2009-08-27 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Röntgentarget
RU2475875C2 (ru) * 2010-12-27 2013-02-20 Федеральное государственное унитарное предприятие "Государственный научный центр Российской Федерации - Физико-энергетический институт имени А.И. Лейпунского" Способ нанесения радиоизотопа на вогнутую металлическую поверхность подложки закрытого источника излучения
US20140146947A1 (en) * 2012-11-28 2014-05-29 Vanderbilt University Channeling x-rays
CN105632856B (zh) * 2016-01-20 2018-06-19 西北核技术研究所 阳极箔产生等离子体加强箍缩聚焦的小焦斑x射线二极管
US10748734B2 (en) 2016-09-05 2020-08-18 Stellarray, Inc. Multi-cathode EUV and soft x-ray source

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US3138729A (en) * 1961-09-18 1964-06-23 Philips Electronic Pharma Ultra-soft X-ray source
CH542510A (de) * 1971-12-27 1973-09-30 Siemens Ag Röntgenröhre
US3969131A (en) * 1972-07-24 1976-07-13 Westinghouse Electric Corporation Coated graphite members and process for producing the same
DE2719609C3 (de) * 1977-05-02 1979-11-08 Richard Dr. 8046 Garching Bauer Röntgenröhre zur Erzeugung monochromatischer Röntgenstrahlen
US4477921A (en) * 1981-11-27 1984-10-16 Spire Corporation X-Ray lithography source tube
US4523327A (en) * 1983-01-05 1985-06-11 The United States Of America As Represented By The Secretary Of The Air Force Multi-color X-ray line source
JPS6166349A (ja) * 1984-09-07 1986-04-05 Hitachi Ltd Ｘ線管用回転陽極タ−ゲツトおよびその製造方法
NL9000061A (nl) * 1990-01-10 1991-08-01 Philips Nv Roentgendraaianode.
US5602899A (en) * 1996-01-31 1997-02-11 Physical Electronics Inc. Anode assembly for generating x-rays and instrument with such anode assembly
FI102697B1 (fi) * 1997-06-26 1999-01-29 Metorex Int Oy Polarisoitua herätesäteilyä hyödyntävä röntgenfluoresenssimittausjärjestely ja röntgenputki
JP2001284098A (ja) * 2000-04-03 2001-10-12 Toyota Macs Inc Ｘ線発生用ターゲット及びｘ線発生装置
JP4374727B2 (ja) * 2000-05-12 2009-12-02 株式会社島津製作所 Ｘ線管及びｘ線発生装置
US6463123B1 (en) * 2000-11-09 2002-10-08 Steris Inc. Target for production of x-rays
DE20213975U1 (de) * 2002-09-06 2002-12-19 Lzh Laserzentrum Hannover Ev Einrichtung zur Erzeugung von UV-Strahlung, insbesondere EUV-Strahlung

Non-Patent Citations (1)

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Title
See references of WO2005119729A2 *

Also Published As

Publication number Publication date
WO2005119729A2 (fr) 2005-12-15
JP2008500686A (ja) 2008-01-10
DE102004025997A1 (de) 2005-12-22
WO2005119729A3 (fr) 2006-12-07
US20070108396A1 (en) 2007-05-17
CN1981361A (zh) 2007-06-13

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