EP1631396A2 - Nettoyage megasonique utilisant une solution de nettoyage sursaturee - Google Patents

Nettoyage megasonique utilisant une solution de nettoyage sursaturee

Info

Publication number
EP1631396A2
EP1631396A2 EP04776442A EP04776442A EP1631396A2 EP 1631396 A2 EP1631396 A2 EP 1631396A2 EP 04776442 A EP04776442 A EP 04776442A EP 04776442 A EP04776442 A EP 04776442A EP 1631396 A2 EP1631396 A2 EP 1631396A2
Authority
EP
European Patent Office
Prior art keywords
gas
solution
substrate
process chamber
cleaning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP04776442A
Other languages
German (de)
English (en)
Other versions
EP1631396A4 (fr
Inventor
Cole S. Franklin
Yi Wu
Brian Fraser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Akrion Technologies Inc
Original Assignee
Goldfinger Technologies LLC
Akrion Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Goldfinger Technologies LLC, Akrion Technologies Inc filed Critical Goldfinger Technologies LLC
Publication of EP1631396A2 publication Critical patent/EP1631396A2/fr
Publication of EP1631396A4 publication Critical patent/EP1631396A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Definitions

  • the present invention relates generally to the methods, apparatus, and systems for substrate processing/manufacturing, and specifically to methods, apparatus, and systems for cleaning semiconductor wafers using applied megasonic energy.
  • One method by which the industry increases the cleanliness of wafers during processing is by introducing megasonic energy to the surface of the wafers during the cleaning step. Applying megasonic energy can enhance particle removal from semiconductor devices during cleaning processes. However, it has been discovered that applied megasonic energy can also damage the semiconductor devices being cleaned.
  • the composition of the cleaning solution, including the quantity and composition of any gas dissolved in the cleaning solution, used in a megasonic cleaning process can affect cleaning efficiency and the amount of damage caused to the wafer.
  • the prior art teaches that cleaning solutions containing supersaturated levels of gas are undesirable for wafer cleaning processes.
  • United States Patent No. 5,800,626 (the '"626 patent") teaches that the cleaning solution should be partially saturated, e.g., 60-98% with gas, in order to achieve the best cleaning results.
  • the '626 patent teaches that a lower saturation limit of 60% is required in order to maintain good cleaning performance.
  • the '626 patent further teaches that too much gas in solution can create defects in silicon surfaces. Therefore, the cleaning solution should not be more than 98% saturated.
  • U.S. Patent No. 6,167,891 (the '"891 patent") teaches that a 100% saturated solution provides optimal cleaning efficiency. According to the '891 patent, under-saturated and supersaturated solutions provide significantly decreased cleaning efficiencies. The '891 patent attributes poor cleaning efficiency at supersaturated conditions to the formation of excessive gas bubbles in the solution that absorb the megasonic energy before it reaches the wafer surface. The '891 patent further teaches that for heated cleaning solutions, the solution must be partially degassed at low temperature before being heated in order to avoid supersaturation at the elevated temperature.
  • U.S. Patent No. 5,849,091 (the '"091 patent") teaches that an air/liquid interface across the wafer surface is critical to enhancing cleaning.
  • the inventors of the '091 patent teach that the best method of forming the air/liquid interface is by directly injecting gas into the cleaning solution across the wafer surface.
  • U.S. Patent No. 6,039,814 (the '"814 patent”) teaches that minute bubbles within the cleaning solution disrupt the propagation of sound, resulting in reduced cleaning efficiency.
  • the '814 patent also teaches that bubbles create flaws in the wafer surface.
  • the source of the bubbles is gas dissolved in the cleaning solution. Therefore, the '814 patent teaches, dissolved gas concentration in the cleaning solution should be below at least 5 ppm, and preferably below 3 ppm.
  • Another object of the present invention to provide a method and system for cleaning a substrate that reduces and/or eliminates damage resulting from acoustical energy.
  • Yet another object is to provide a method and system for cleaning a substrate using megasonic energy that can be used for sensitive line and trench structures of materials including poly silicon, metal or dielectric .
  • Still another object of the present invention is to provide a method and system for cleaning a substrate that increases the yield of operational semiconductor devices per wafer.
  • the present invention in one aspect is a method of cleaning at least one substrate comprising: (a) positioning a substrate in a process chamber having a gaseous environment with a first temperature and a first partial pressure for a first gas; (b) supplying a solution to the process chamber so as to contact the substrate, the solution comprising a cleaning liquid and the first gas dissolved in the cleaning liquid at a supersaturated concentration for the first temperature and the first partial pressure; and (c) applying acoustical energy to the substrate to clean the substrate while the substrate is in contact with the solution.
  • the first gas is preferably a gas that protects the substrate from damage resulting from the acoustical energy, such as carbon dioxide.
  • the cleaning liquid can be be commonly used semiconductor solutions such as demmzed water, RCA solutions, dilute acids, dilute bases or semi-aqueous solvents It is further preferable that the solution further comprises a second gas dissolved in the cleaning liquid that promotes particle removal from the substrate, such as nitrogen (N ), oxygen, helium, and argon.
  • the second gas may or may not be dissolved in the cleaning liquid in an amount to be at a supersaturated concentration for the temperature and partial pressure of the second gas within the process chamber.
  • the first gas is carbon dioxide and the liquid is DI water.
  • the solution can be created in a environment other than the process chamber, such as a membrane contactor, by dissolving CO 2 in DI water.
  • a gaseous environment within the membrane contactor is preferably maintained at a temperature and a partial pressure for CO 2 that that the amount of CO 2 dissolved in the DI water in the membrane contactor is at or below the saturation concentration for the temperature and partial pressure within the membrane contactor.
  • the amount of the carbon dioxide dissolved in the liquid can be the range of 50 to 2000 part per million, and most preferably approximately 1000 parts per million.
  • the solution is supplied to the process chamber so as to contact the substrate(s) to be cleaned. Because the amount of CO 2 in the solution is at a supersaturated concentration for the partial pressure and temperature of the gaseous environment in the process chamber, the CO 2 will have a tendency to escape from the solution and into the gaseous atmosphere of the process chamber. Thus, it is preferable that the step of applying acoustical energy to the substrate be completed before enough of the CO 2 escapes from the solution to lower the concentration of the CO 2 dissolved in the DI water to a saturation concentration for the temperature and partial pressure of CO 2 within the process chamber.
  • the environment within the process chamber is preferably a gaseous environment comprising air or N 2 and is at room temperature and atmospheric pressure. It is further preferred that the acoustical energy supplied to the substrate be megasonic energy and that the substrate be a semiconductor wafer. It is also preferred that the acoustic energy be transmitted through the solution and to the substrate. As a result of the protective effect of the CO 2 , the method of invention can be used to apply megasonic energy during the cleaning steps of a semiconductor wafer with minimal damage to the wafer containing sensitive line and trench structures of materials including poly Si, metal or dielectric.
  • This method of invention can be also used to clean substrates in both non- immersion and immersion type process chambers and can be used in single and batch type substrate processing.
  • the substrate When implemented into a non-immersion type process chamber, the substrate can be supported in a substantially horizontal orientation.
  • the solution is preferably supplied to the process chamber so as to form a layer of the solution on at least one surface of the substrate.
  • the acoustical energy is then preferably transmitted through the solution and to the substrate.
  • the substrate will be submerged in the solution.
  • the invention is a method of cleaning at least one semiconductor wafer comprising (a) positioning a semiconductor wafer in a process chamber; (b) supplying a solution to the process chamber so as to contact the substrate, the solution comprising a cleaning liquid and a first and second gases dissolved in the cleaning liquid, wherein the first gas promotes particle removal from the wafer and the second gas protects the wafer from damage resulting from acoustical energy; and (c) applying acoustical energy through the solution and to the wafer to clean the wafer.
  • the invention is a system for cleaning at least one substrate comprising: a process chamber having a gaseous environment with a first temperature and a first partial pressure of a first gas; a support for supporting at least one substrate in the process chamber; means for dissolving the first gas in a cleaning liquid in a supersaturated concentration for the first temperature and first partial pressure, thereby forming a solution; means for supplying the solution to the process chamber to contact a substrate supported by the support; a source of acoustical energy for transmitting acoustical energy to a substrate supported in the support; and a controller adapted to activate the source of acoustical energy when a substrate is positioned in the support and the solution is supplied to the process chamber and in contact with the substrate, the acoustical energy passing through the solution and to the substrate before enough of the first gas escapes from the solution to lower concentration of the first gas dissolved in the liquid to a saturation concentration for the first temperature and first partial pressure.
  • Figure 1 is a schematic of a megasonic cleaning system according to an embodiment of the invention.
  • Figure 2 is a left side view of a non-immersion single wafer megasonic cleaning apparatus according to an embodiment of the present invention.
  • Figure 3 is a left-side cross-sectional view of the apparatus shown in FIG.
  • Figure 4A is a microscopic image of a damaged semiconductor wafer surface with etched lines that was cleaned using prior art megasonic cleaning process.
  • Figure 4B is microscopic image of a non-damaged semiconductor wafer surface with etched lines that was cleaned according to an embodiment of the present invention.
  • megasonic cleaning system 10 is illustrated according to an embodiment of the present invention.
  • Megasonic cleaning system 10 comprises CO 2 gas source 20, nitrogen (N 2 ) gas source 30, cleaning liquid source 40, membrane contactor 50, process chamber 60, and megasonic energy source 70. While megasonic energy source 70 is illustrated as being coupled to the bottom of process chamber 60, the invention is not limited to any specific orientation of megasonic energy source 70 with respect to process chamber 60 so long as megasonic energy source 60 can supply megasonic energy to a semiconductor wafer (not illustrated) supported within process chamber 60.
  • a cleaning liquid such as as as
  • One of the gases is preferably of a type that promotes good particle removal, such as nitrogen (N 2 ) . oxygen (O 2 ) helium (He), argon (Ar) and others.
  • the other of the gases is preferably of a type that protects a semiconductor wafer from being damaged from the effects of megasonic energy exposure.
  • a preferred example of such a gas is CO 2 .
  • the gases may be dissolved into the cleaning liquid using a membrane contactor, other known methods and apparatus of dissolving gases into liquids can be used.
  • a gaseous environment having a controlled temperature and pressure is maintained in the membrane contactor 50 during dissolution of the CO 2 and N 2 gases into the cleaning liquid.
  • the temperature and partial pressures of CO 2 and N 2 in the gaseous environment in membrane contactor 50 are controlled so that more CO 2 gas and N 2 gas will dissolve into the cleaning liquid in the membrane contactor 50 than otherwise would in the gaseous environment maintained in process chamber 60.
  • the cleaning solution is introduced into process chamber 60 via fluid line 51.
  • the cleaning solution contacts the wafer (or wafers) supported therein.
  • Process chamber 60 preferably contains air at atmospheric pressure and room temperature.
  • one or more of the dissolved gases i.e. the CO 2 gas or the N 2 gas
  • the dissolved gases that are above the saturation concentration for the temperature and respective partial pressure of the gaseous environment of process chamber 60 will have a tendency to escape from the cleaning solution.
  • wafer processing/cleaning is preferably completed before enough of the gas can escape the cleaning solution to return the amount of the gas in the cleaning solution to the saturation concentration.
  • the CO 2 concentration in the cleaning solution is 1000 ppm, which is more than 1000 times the saturation concentration of CO 2 in air at atmospheric pressure and room temperature. Experiment has shown this concentration of CO 2 to produce very efficient cleaning with no wafer damage when used in conjunction with applied megasonic energy.
  • megasonic energy source 70 is activated.
  • the semiconductor wafer(s) may be immersed in the cleaning solution or, in the event of a single-wafer process chamber, a layer of the cleaning solution may be applied to one or more of the wafer's surfaces.
  • the present invention is not limited to a specific type of process chamber.
  • the megasonic energy source is not limited to any particular shape and/or orientation.
  • the megasonic energy source can be plate-like, an elongated rod, triangularly shaped, or otherwise.
  • megasonic energy source 70 creates and transmits megasonic acoustical energy through the cleaning solution and to the semiconductor wafer (or wafers) to be cleaned.
  • the dissolved CO 2 (and or the N 2 ) in the cleaning solution acts to protect the wafers being cleaned from being damaged by the megasonic energy being transmitted to the wafer surfaces.
  • megasonic energy can be applied to semiconductor wafers in cleaning processes subsequent to the wafer taking on a sensitive nature, such as as after etching of lines or trenches of materials including poly silicon, metal or dielectric.
  • FIGS. 4A and 4B illustrates the advantageousness of using a supersaturated amount of CO 2 as one of the gases dissolved in the cleaning solution.
  • FIGS. 4 A and 4B represent damage evaluations of sensitive bitline structures using a microscope. The dark spots in the figures indicate wafer damage.
  • FIG 4A. illustrates wafer damage resulting from using a cleaning solution having a saturated concentration of air. Cleaning efficiency is approximately 99%, but the wafer has sustained significant damage.
  • FIG. 4B illustrates wafer damage resulting from using a cleaning solution having a supersaturated concentration of CO 2 according to an embodiment of the invention. Cleaning efficiency is again approximately 99%, but the wafer has sustained no damage.
  • megasonic conditions were identical, and, except for the concentrations of dissolved gases, the cleaning solutions were identical.
  • the present invention can be practiced in conjunction with a variety of types of process chambers, including single wafer or batch process chambers and/or immersion or non-immersion process chambers.
  • process chambers including single wafer or batch process chambers and/or immersion or non-immersion process chambers.
  • a single wafer non-immersion type process chamber will be discussed with the understanding that the inventive principles are equally applicable to batch type immersion process tanks.
  • FIG. 2 illustrates single wafer non-immersion megasonic energy cleaning apparatus 101, made in accordance with the present invention.
  • the cleaning solution created as described in relation to FIG. 1 is supplied to the wafer 106 via fluid outlet 214 to form a thin layer on the wafer surface. Alternatively, the cleaning solution can also be applied to the bottom surface of the wafer 106 also.
  • Fluid outlet 214 can be fluidly coupled to fluid line 51 (FIG. 1).
  • Megasonic energy cleaning apparatus 101 comprises an elongated probe 104 inserted through the wall 100 of a processing tank 101.
  • the process tank 101 forms a process chamber within which a wafer 106 can be processed according to the present invention As seen, the probe 104 is supported on one end outside the container 101.
  • a suitable O-ring 102 sandwiched between the probe 104 and the tank wall
  • a heat transfer member 134 contained within a housing 120, is acoustically and mechanically coupled to the probe 104. Also contained within the housing 120 is a piezoelectric transducer 140 acoustically coupled to the heat transfer member 134. Stand off 141, and electrical connectors 142, 154, and 126 are connected between the transducer 140 and a source of acoustic energy (not shown).
  • the housing 120 supports an inlet conduit 124 and an outlet conduit 122 for coolant and has an opening 152 for electrical connectors 154, and 126.
  • the housing 120 is closed by an annular plate 118 with an opening 132 for the probe 104. The plate 118 in turn is attached to the tank 101.
  • a support or susceptor 108 is positioned parallel to and in close proximity to the probe 104.
  • the susceptor 108 may take various forms, the arrangement illustrated including an outer rim 108a supported by a plurality of spokes 108b connected to a hub 108c supported on a shaft 110, which extends through a bottom wall of the processing tank 101. Outside the tank 101, the shaft 110 is connected to a motor 112.
  • the elongated probe 104 is preferably made of a relatively inert, non- contaminating material, such as quartz, which efficiently transmits acoustic energy. While utilizing a quartz probe is satisfactory for most cleaning solutions, solutions containing hydrofluoric acid can etch quartz. Thus, a probe made of sapphire silicon carbide, boron nitride, vitreous carbon, glassy carbon coated graphite, or other suitable materials may be employed instead of quartz. Also, quartz may be coated by a material that can withstand HF such as silicon carbide or vitreous carbon.
  • the probe 104 comprises a solid, elongated, spindle-like or probe-like cleaning portion 104a, and a base or rear portion 104b.
  • the cross-section of the probe 104 may be round and advantageously, the diameter of the cleaning portion 104a is smaller in diameter than the rear portion 104b. In a preferred embodiment the area of the rear face of the rear portion 104b is 25 times that of the tip face of portion 104a.
  • cross-sectional shapes other than circular may be employed.
  • a cylindrically-shaped rod or cleaning portion 104a having a small diameter is desirable to concentrate the megasonic energy along the length of the probe 104a.
  • the diameter of the rod 104a should be sufficient to withstand mechanical vibration produced by the megasonic energy transmitted by the probe.
  • the radius of the rod 104a should be equal to or smaller than the wavelength of the frequency of the energy applied to it.
  • This structure produces a desired standing surface wave action that directs energy radially into liquid contacting the probe.
  • the rod diameter is expanding and contracting a minute amount at spaced locations along the length of the rod.
  • the radius of the rod 104a is approximately 0.2 inches and operates at a wave length of about 0.28 inches. This configuration produces 3 to 4 wave lengths per inch along the probe length.
  • the probe cleaning portion 104a is preferably long enough so that the entire surface area of the wafer 106 is exposed to the probe 104 during wafer cleaning.
  • the length of the cleaning portion 104b is preferably long enough to reach at least the center of the wafer 106. Therefore, as the wafer 106 is rotated beneath the probe 104, the entire surface area of the wafer 106 passes beneath the probe 104. The probe 104 could probably function satisfactorily even if it does not reach the center of the wafer 106 since megasonic vibration from the probe tip would provide some agitation towards the wafer center.
  • the length of the probe 104 is also determined by a desired number of wavelengths.
  • probe lengths vary in increments of half wavelengths of the energy applied to the probe 104.
  • the probe cleaning portion 104a includes three to four wavelengths per inch of the applied energy.
  • the length of the probe cleaning portion 104a in inches is equal to the desired number of wavelengths divided by a number between three and four. Due to variations in transducers, it is necessary to tune the transducer 140 to obtain the desired wavelength, so that it works at its most efficient point.
  • the rear probe portion 104b which is positioned outside the tank 101, flares to a diameter larger than the diameter of the cleaning portion 104a.
  • the diameter of the rear portion of the probe gradually increases to a cylindrical section 104d.
  • the large surface area at the end of the rear portion 104d is advantageous for transmitting a large amount of megasonic energy, which is then concentrated in the smaller diameter section 104a.
  • the cleaning solution (as created as described above with respect to FIG. 1) is sprayed onto the wafer upper surface from a nozzle 214 while the probe 104 is acoustically energized.
  • the tank 101 may be filled with cleaning solution.
  • the liquid creates a meniscus 216 between the lower portion of the probe 104 and the adjacent upper surface of the rotating wafer 106.
  • the meniscus 216 wets a lower portion of the probe cross section.
  • the size of the arc defined by the wetted portion of the cross-section varies according to the properties of the liquid used in the cleaning solution, the material used to construct the probe 104, and the vertical distance between the wafer 106 and the lower edge of the probe 104.
  • the cleaning solution provides a medium through which the megasonic energy within the probe 104 is transmitted to the wafer surface to loosen particles. These loosened particles are flushed away by the continuously flowing spray and the rotating wafer 106. When the liquid flow is interrupted, a certain amount of drying action is obtained through centrifugal force, with the cleaning solution being thrown from the wafer 106.
  • the cleaning solution of the present invention, or another cleaning medium can be supplied to the opposite side of the wafer at which the source of megasonic enrgy is positioned. In this embodiment, it is preferable that the megasonic energy be supplied to the wafer in sufficient power to clean the opposite side of the wafer also.
  • the wafer processing/cleaning through the application of the megasonic energy is completed before enough of the CO 2 and/or N 2 gas can escape the cleaning solution to return the amount of these gases in the cleaning solution to the saturation concentration.
  • the dissolved CO 2 (and or the N 2 ) in the cleaning solution at a supersaturation concentration acts to protect the wafers being cleaned from being damaged by the megasonic energy being transmitted to the wafer surfaces. All functions are carried out by a properly programmed processor/controller.
  • the invention is not limited to the introduction of two gases into the cleaning liquid but encompasses embodiments where only one gas is dissolved in the cleaning liquid at a supersaturated concentration for the environment in the process chamber.
  • additional gases can exist in the cleaning liquid and/or the cleaning liquid can be a mixture of liquids.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)

Abstract

La présente invention a trait à un procédé et un système de nettoyage mégasonique d'un ou de plusieurs substrats réduisant l'endommagement au(x) substrat(s) découlant de l'énergie mégasonique. Les substrats sont maintenus dans une chambre de traitement et mis en contact avec une solution de nettoyage comportant un liquide de nettoyage comprenant du gaz carbonique dissous dans le liquide de nettoyage en de quantités telles que le gaz carbonique est à une concentration sursaturée pour les conditions régnant dans la chambre de traitement. L'énergie mégasonique est ensuite transmise au substrat. La solution de nettoyage assure une protection contre l'endommagement découlant de l'application d'énergie mégasonique/acoustique. Dans un autre mode de réalisation, l'invention a trait à un système pour la mise en oeuvre du procédé. L'invention n'est pas limitée au gaz carbonique mais peut être utilisée conjointement avec tout gaz, qui lorsqu'il est dissous dans un liquide de nettoyage, protège des substrats contre l'endommagement découlant de l'application d'énergie mégasonique/acoustique.
EP04776442.8A 2003-06-11 2004-06-10 Nettoyage megasonique utilisant une solution de nettoyage sursaturee Withdrawn EP1631396A4 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US47760203P 2003-06-11 2003-06-11
PCT/US2004/018464 WO2005006396A2 (fr) 2003-06-11 2004-06-10 Nettoyage megasonique utilisant une solution de nettoyage sursaturee

Publications (2)

Publication Number Publication Date
EP1631396A2 true EP1631396A2 (fr) 2006-03-08
EP1631396A4 EP1631396A4 (fr) 2013-08-14

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Country Status (6)

Country Link
EP (1) EP1631396A4 (fr)
JP (1) JP4643582B2 (fr)
KR (1) KR101110905B1 (fr)
CN (1) CN1849182A (fr)
TW (1) TWI330552B (fr)
WO (1) WO2005006396A2 (fr)

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KR20020037177A (ko) * 2000-11-13 2002-05-18 김용현 무를 첨가한 꿀음료
KR100827618B1 (ko) * 2006-05-11 2008-05-07 한국기계연구원 세정용 초음파 장치 및 이를 이용한 초음파 세정시스템
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WO2008050832A1 (fr) * 2006-10-27 2008-05-02 Tokyo Electron Limited Appareil et procédé de nettoyage de substrat, programme et support d'enregistrement
KR100748480B1 (ko) * 2007-06-27 2007-08-10 한국기계연구원 세정용 초음파 장치를 이용한 초음파 세정시스템
JP4532580B2 (ja) 2008-08-20 2010-08-25 株式会社カイジョー 超音波洗浄装置
JP4915455B2 (ja) * 2010-02-25 2012-04-11 トヨタ自動車株式会社 車両等大型製品のマイクロバブルによる脱脂システム
JP2014130881A (ja) * 2012-12-28 2014-07-10 Ebara Corp 研磨装置
JP6678448B2 (ja) * 2015-12-22 2020-04-08 株式会社Ｓｃｒｅｅｎホールディングス 基板洗浄方法および基板洗浄装置
WO2020095091A1 (fr) * 2018-11-06 2020-05-14 Arcelormittal Équipement améliorant le nettoyage par ultrasons
JP7233691B2 (ja) * 2019-03-28 2023-03-07 株式会社エアレックス 低温物品の除染方法及びこれに使用するパスボックス

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EP1631396A4 (fr) 2013-08-14
CN1849182A (zh) 2006-10-18
WO2005006396A2 (fr) 2005-01-20
KR101110905B1 (ko) 2012-02-20
TWI330552B (en) 2010-09-21
WO2005006396A3 (fr) 2005-09-15
KR20060037270A (ko) 2006-05-03
JP4643582B2 (ja) 2011-03-02
TW200507954A (en) 2005-03-01
JP2007502032A (ja) 2007-02-01

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