WO2008050832A1 - Appareil et procédé de nettoyage de substrat, programme et support d'enregistrement - Google Patents

Appareil et procédé de nettoyage de substrat, programme et support d'enregistrement Download PDF

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Publication number
WO2008050832A1
WO2008050832A1 PCT/JP2007/070811 JP2007070811W WO2008050832A1 WO 2008050832 A1 WO2008050832 A1 WO 2008050832A1 JP 2007070811 W JP2007070811 W JP 2007070811W WO 2008050832 A1 WO2008050832 A1 WO 2008050832A1
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WO
WIPO (PCT)
Prior art keywords
cleaning
cleaning liquid
supply pipe
gas
substrate
Prior art date
Application number
PCT/JP2007/070811
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English (en)
Japanese (ja)
Inventor
Tsukasa Watanabe
Naoki Shindo
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Priority to JP2008541020A priority Critical patent/JPWO2008050832A1/ja
Publication of WO2008050832A1 publication Critical patent/WO2008050832A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers

Definitions

  • Substrate cleaning apparatus substrate cleaning method, program, and recording medium
  • the present invention immerses a substrate to be processed in a cleaning liquid and generates ultrasonic waves in the cleaning liquid.
  • the present invention relates to a substrate cleaning method and a substrate cleaning apparatus that remove particles (dirt, etc.) adhering to a substrate to be processed, and in particular, removes particles from a substrate to be processed with high removal efficiency while greatly suppressing damage to wiring patterns.
  • the present invention relates to a substrate cleaning method and a substrate cleaning apparatus.
  • the present invention also relates to a substrate cleaning method for immersing a substrate to be processed in a cleaning liquid and generating ultrasonic waves in the cleaning liquid to remove particles (dirt etc.) adhering to the substrate to be processed.
  • the present invention relates to a program for executing a substrate cleaning method capable of removing a particle from a substrate to be processed with high removal efficiency while greatly suppressing pattern damage, and a program recording medium storing the program.
  • a method in which a substrate to be processed is immersed in a cleaning solution while being held by a holding member and ultrasonic waves are generated in the cleaning solution to clean the substrate to be processed.
  • V so-called ultrasonic cleaning (also called megasonic processing) 1S
  • ultrasonic cleaning also called megasonic processing
  • the present invention has been made in consideration of such points, and the particles (dirt etc.) adhered to the substrate to be processed by immersing the substrate to be processed in the cleaning solution and generating ultrasonic waves in the cleaning solution.
  • a substrate cleaning method and a substrate cleaning apparatus capable of removing particles from a substrate to be processed with high removal efficiency while greatly suppressing damage to a wiring pattern are provided. Intended to provide
  • the present invention is a substrate cleaning method for removing particles (dirt or the like) adhering to a substrate to be processed by immersing the substrate to be processed in a cleaning solution and generating ultrasonic waves in the cleaning solution.
  • a program for executing a substrate cleaning method capable of removing particles from a substrate to be processed with high removal efficiency while greatly suppressing damage to a wiring pattern and a program recording medium storing the program. I will make it available.
  • the inventors of the present invention conducted various experiments. (1) Generation of a large amount of bubbles hinders improvement in particle removal efficiency. (2) Gas dissolved in cleaning solution prevents damage to wiring pattern. The experimental results were found to be effective. The present invention has been made based on such experimental results.
  • a substrate cleaning apparatus supplies a cleaning tank that stores a cleaning liquid, an ultrasonic generator that generates ultrasonic waves in the cleaning liquid in the cleaning tank, and a cleaning liquid in which a gas that is difficult to dissolve in the cleaning liquid is dissolved. And a second supply pipe for supplying a cleaning liquid in which a gas easily dissolved in the cleaning liquid is dissolved.
  • the first supply pipe is connected to the cleaning tank, and supplies the cleaning liquid in which the gas difficult to dissolve in the cleaning liquid is dissolved into the cleaning tank
  • the second supply pipe may be connected to the cleaning tank so that the second supply pipe is easily dissolved in the cleaning liquid and / or the cleaning liquid in which the gas is dissolved is supplied into the cleaning tank.
  • the substrate cleaning apparatus according to the present invention is connected to the first supply pipe and the second supply pipe and is connected to the cleaning tank, and the cleaning liquid supplied from the first supply pipe and the second supply pipe The supplied cleaning solution You may make it further provide the mixing supply pipe
  • the first supply pipe and the second supply pipe may be connected in series! /.
  • a substrate cleaning apparatus is connected to the first supply pipe and the second supply pipe, and supplies a degassed cleaning liquid to the first supply pipe and the second supply pipe.
  • a second dissolving device that dissolves the easily soluble gas in the cleaning liquid flowing in the supply pipe may be further provided.
  • the dissolved gas concentration of the degassed cleaning liquid supplied from the third supply pipe to the first supply pipe and the second supply pipe is 0% when rounded off to the nearest decimal place. You may make it.
  • the gas that is hardly dissolved may be any one of nitrogen, hydrogen, oxygen, an inert gas, and a combination thereof. .
  • the hard-to-dissolve gas is nitrogen
  • the dissolved gas concentration of the nitrogen in the cleaning liquid supplied from the first supply pipe is rounded off to the nearest decimal place. You may make it%.
  • the gas that is easily dissolved may be carbon dioxide.
  • the temperature of the cleaning liquid in the cleaning tank during cleaning may be maintained at 28 ° C or lower.
  • a substrate cleaning method includes a step of immersing a substrate to be processed in a cleaning liquid in a cleaning tank, and a step of generating ultrasonic waves in the cleaning liquid in the cleaning tank, and generates the ultrasonic waves.
  • the gas is easily dissolved in the cleaning liquid! /, And the gas and the gas that is difficult to dissolve in the cleaning liquid are dissolved in the cleaning liquid in the cleaning tank.
  • the gas that is difficult to dissolve may be any one of nitrogen, hydrogen, oxygen, an inert gas, and a combination thereof. .
  • the hard-to-dissolve gas may be nitrogen, and the dissolved gas concentration of the nitrogen in the cleaning liquid may be 14% by rounding off the decimals. .
  • the gas that is easily dissolved may be carbon dioxide.
  • the temperature of the cleaning liquid in the cleaning tank may be 28 ° C or lower.
  • a program according to the present invention is a program executed by a computer that controls a substrate cleaning apparatus, and is executed by the computer to immerse a substrate to be processed in a cleaning liquid in a cleaning tank;
  • a step of generating an ultrasonic wave in the cleaning liquid in the cleaning tank, and in the step of generating the ultrasonic wave, V, which is easily dissolved in the cleaning liquid, and a gas which is difficult to dissolve in the cleaning liquid are contained in the cleaning tank.
  • the substrate cleaning apparatus is caused to perform a method for cleaning a substrate to be processed, which is dissolved in the cleaning solution.
  • a program recording medium is a computer-readable recording medium in which a program executed by a computer controlling a substrate cleaning apparatus is recorded, and the program is executed by the computer.
  • the step of immersing the substrate to be cleaned in the cleaning tank in the cleaning tank and the step of generating ultrasonic waves in the cleaning liquid in the cleaning tank are easy to dissolve in the cleaning liquid in the step of generating ultrasonic waves.
  • the substrate cleaning apparatus is caused to perform a method for cleaning a substrate to be processed, in which a gas and a gas difficult to dissolve in the cleaning solution are dissolved in the cleaning solution in the cleaning tank.
  • the cavity can be actively generated by the hardly dissolved gas dissolved in the cleaning liquid.
  • the easily dissolved gas dissolved in the cleaning liquid can absorb the shock wave propagating in the cleaning liquid due to the cavity.
  • FIG. 1 is a diagram schematically showing a configuration of an embodiment of a substrate cleaning apparatus according to the present invention.
  • FIG. 2 is a top view showing a processing tank of the substrate cleaning apparatus.
  • FIG. 3 is a diagram for explaining the propagation action of ultrasonic waves in the cleaning liquid when a large amount of bubbles are generated in the cleaning tank.
  • FIG. 4 is a diagram for explaining the propagation action of ultrasonic waves in the cleaning liquid when a small amount of bubbles is generated in the cleaning tank.
  • FIG. 5 is a view corresponding to FIG. 1 and schematically showing a configuration of a modified example of the substrate cleaning apparatus shown in FIG. 1.
  • FIG. 6 is a diagram for explaining the relationship between dissolved gas concentration and particle removal efficiency.
  • FIG. 7 is a diagram for explaining the relationship between the dissolved gas concentration and the region in the wafer where the particle removal efficiency is high.
  • the substrate cleaning apparatus according to the present invention is applied to a semiconductor wafer cleaning apparatus.
  • the substrate cleaning apparatus according to the present invention is not limited to the application to the cleaning of semiconductor wafers, but can be applied to the cleaning of substrates widely.
  • 1 to 4 are diagrams for explaining an embodiment of a substrate cleaning method, a substrate cleaning apparatus, a program, and a recording medium according to the present invention.
  • FIG. 1 is a diagram schematically showing the configuration of the substrate cleaning apparatus
  • FIG. 2 is a top view showing a processing tank of the substrate cleaning apparatus
  • FIGS. 3 and 4 are diagrams of ultrasonic waves in the cleaning liquid. It is a figure for demonstrating a propagation action.
  • the substrate cleaning apparatus 10 includes a cleaning tank (DIP tank) 12, a cleaning liquid supply facility 40 that supplies a cleaning liquid into the cleaning tank 12, and a wafer to be processed (subject to be processed).
  • Processing substrate) Holding member (also called wafer boat) 20 for holding W and cleaning liquid in cleaning tank 12
  • An ultrasonic generator 30 for generating ultrasonic waves and a control device 18 connected to the cleaning liquid supply equipment 40 are provided.
  • Such a substrate cleaning apparatus 10 is an apparatus for ultrasonically cleaning the wafer W to be processed by generating ultrasonic waves in the cleaning liquid while the wafer W to be processed is immersed in the cleaning liquid stored in the cleaning tank 12. It is.
  • the cleaning liquid supply facility 40 is connected to the cleaning tank 12, and is connected to the first supply pipe 50 that supplies the first cleaning liquid into the cleaning tank 12, and the cleaning tank 12, and cleans the second cleaning liquid.
  • the second supply pipe 60 that supplies the tank 12 and the first supply pipe 50 and the second supply pipe are connected to the first supply pipe 50 and the second supply pipe 60 and the deaerated cleaning liquid (third cleaning liquid) is supplied to the first supply pipe 50 and the second supply pipe.
  • a third supply pipe 70 that supplies the cleaning liquid to the 60; and a cleaning liquid source 72 that supplies the cleaning liquid to the third supply pipe 70.
  • pure water DIW
  • DIW pure water
  • the first cleaning liquid is obtained by dissolving a gas that is difficult to dissolve (dissolve) in pure water as the cleaning liquid in the third cleaning liquid at a predetermined dissolved concentration.
  • a gas that is difficult to dissolve refers to a gas that is difficult to stabilize when dissolved in pure water. Therefore, when these gases are dissolved in pure water, cavitation caused by these gases is actively generated when the pure water is irradiated with ultrasonic waves. Further, when the cavity is generated, these dissolved gases are easily bubbled.
  • examples of such “dissolvable gases” include nitrogen, hydrogen, oxygen, inert gases (helium, neon, argon, xenon, etc.), and combinations of these! / Can be used.
  • the second cleaning liquid herein is a solution obtained by dissolving (dissolving) in a pure water as a cleaning liquid! /, And dissolving a gas in the second cleaning liquid at a predetermined dissolved concentration.
  • “easily soluble gas” refers to a gas that is easily stabilized in a state dissolved in pure water. Therefore, when these gases are dissolved in pure water, cavitation due to these gases is unlikely to occur even when ultrasonic waves are applied to the pure water. In addition, since it is difficult to generate cavity, these dissolved gases are less likely to be bubbled.
  • a “dissolvable gas” for example, carbon dioxide can be used.
  • the upstream end of the third supply pipe 70 is connected to the cleaning liquid source 72.
  • the downstream end of the third supply pipe is connected to the upstream end of the first supply pipe 50 and the upstream end of the second supply pipe 60 via the branch pipe 43.
  • the third supply pipe 70 is provided with a deaeration device 75 for degassing the cleaning liquid flowing in the third supply pipe 70.
  • the degassing device 75 various known degassing devices using principles such as membrane degassing and vacuum degassing can be employed.
  • the relationship between the output of the degassing device 75 and the degree of gas that can be degassed from the cleaning liquid at each output (that is, the amount of decrease in dissolved concentration at each output) is grasped in advance. Based on the grasped relationship, the output of the degassing device 75 is determined according to the target degassing amount, and the degassing device 75 is operated with the output, thereby removing the degassed cleaning liquid (third cleaning liquid). ) Can be obtained.
  • This deaeration device 75 is connected to the control device 18, and its operation is controlled by the control device 18.
  • the dissolved gas concentration of the third cleaning liquid is set to Oppm.
  • the dissolved gas concentration of can be set to the planned dissolved gas concentration (Oppm)
  • the dissolved gas concentration used in the present application is judged by a value obtained by rounding off the decimal point in units of "ppm".
  • “Oppm” as used in this application shall include dissolved gas concentrations that are Oppm when rounded to one decimal place, that is, less than 0.5 ppm.
  • the first supply pipe 50 and the second supply pipe 60 flow through the supply pipes 50 and 60 and the on-off valves 54 and 64 that open and close the supply pipes 50 and 60, respectively.
  • flow meters 52 and 62 capable of adjusting the flow rate of the cleaning liquid.
  • Each flow meter 52, 62 is connected to the control device 18.
  • the flow rate of the cleaning liquid flowing in the first supply pipe 50 and the second supply pipe 60 The flow rate of the cleaning liquid flowing in the inside can be controlled by the control device 18 through the flow meters 52 and 62.
  • the first supply pipe 50 is provided with a first dissolving device 55 for dissolving a gas that is difficult to dissolve in the cleaning liquid flowing in the first supply pipe 50.
  • the first melting device 55 is connected to a first gas source 55a that supplies a gas that is difficult to dissolve.
  • the nitrogen power first gas source 55a is supplied to the first dissolving device 55 as a gas that is difficult to dissolve.
  • the second supply pipe 60 is provided with a second dissolving device 65 for dissolving a gas that is easily dissolved in the cleaning liquid flowing in the second supply pipe 60.
  • the second melting device 65 is connected to a second gas source 65a that supplies a gas that is easily dissolved.
  • carbon dioxide power is supplied to the second melting device 65 from the second gas source 65a as a gas that is easily dissolved.
  • first and second dissolving devices 55 and 65 various known dissolving devices can be used in the same manner as the deaeration device 75 described above.
  • the relationship between the output of the dissolving devices 55 and 65 and the amount of gas that can be dissolved by the cleaning solution at each output (that is, the amount of increase in dissolved concentration at each output) is grasped in advance.
  • the first and second cleaning liquids in which the gas is dissolved at the desired dissolved gas concentration can be obtained by determining the outputs of the dissolution apparatuses 55 and 65 based on the relationship and operating the dissolution apparatuses 55 and 65 with the output. it can.
  • the first melting device 55 and the second melting device 65 are each connected to a control device 18, and their operations are controlled by the control device 18, respectively.
  • the first supply pipe 50 and the second supply pipe 60 are provided with temperature control mechanisms 58 and 68.
  • the temperature control mechanisms 58 and 68 the temperature of the first cleaning liquid flowing in the first supply pipe 50 and the temperature of the second cleaning liquid flowing in the second supply pipe 60 are adjusted within the desired temperature ranges, respectively. .
  • the generation of bubbles in the cleaning tank 12 it is advantageous that the temperature of the cleaning solution is low, and it is preferable that the temperature is 28 ° C. or lower based on the results in the examples described later!
  • first cleaning nozzles 56 are opposed to the wall surface of the cleaning tank 12. It is provided along.
  • second cleaning nozzles 66 are provided along the opposing wall surfaces of the cleaning tank 12 at the downstream end of the second supply pipe 60 on the cleaning tank 12 side.
  • first cleaning liquid nozzle 56 is shown, but the second cleaning liquid nozzle 66 has the same configuration as the illustrated first cleaning liquid nozzle 56.
  • the first cleaning nozzle 56 and the second cleaning nozzle 66 are formed of a cylindrical member extending in an elongated shape along the wall surface of the cleaning tank 12.
  • the cylindrical member is provided with a large number of nozzle holes 56a and 66a arranged at regular intervals along the longitudinal direction thereof.
  • the arrangement positions of the nozzle holes 56a and 66a are determined based on the arrangement position of the processing target wafer W held by the holding member 20, as will be described later.
  • the first cleaning nozzle 56 is disposed above the second cleaning nozzle 66.
  • the present invention is not limited to this, and the second cleaning nozzle 66 may be disposed above the first cleaning nozzle 56, or the first cleaning liquid and the second cleaning liquid may be described later as modified examples. May be supplied to the cleaning tank 12 by the same nozzle.
  • the washing tank 12 that receives the first cleaning liquid and the second cleaning liquid from the cleaning liquid supply facility 40 will be described.
  • the washing tank 12 has a substantially rectangular parallelepiped outline as shown in FIGS.
  • the cleaning tank 12 has an upper opening for taking in and out the wafer W as will be described later.
  • an exhaust pipe 13 for discharging the stored cleaning liquid is provided on the bottom surface of the cleaning tank 12.
  • an outer tank 15 is provided so as to surround the upper opening of the cleaning tank 12.
  • the outer tank 15 collects the cleaning liquid overflowing from the upper opening of the cleaning tank 12. Similar to the cleaning tank 12, the outer tank 15 is also provided with a discharge pipe 16 for discharging the recovered cleaning liquid.
  • the cleaning tank 12 and the outer tank 15 are formed using, for example, quartz having high chemical resistance.
  • the cleaning liquid discharged from the discharge pipes 13 and 16 of the cleaning tank 12 and the outer tank 15 May be discarded as it is, or may be recycled.
  • the holding member 20 that holds the wafer W will be described.
  • the holding member 20 has four rod-shaped members 22 extending in a substantially horizontal direction, and a base 24 that cantilever-supports the four rod-shaped members 22 from one side.
  • the rod-shaped holding member 22 is configured to support a plurality of wafers W, for example, 50 wafers W, to be cleaned at a time from below. For this reason, each rod-like member 22 is formed with grooves (not shown) arranged at regular intervals along the longitudinal direction thereof.
  • the wafer 20 is engaged with the groove, and the holding member is formed so that the plate surface of each wafer W is substantially orthogonal to the extending direction of the rod-like member, that is, the plate surface of each wafer W is along the vertical direction. 20 (see Fig. 1).
  • the arrangement pitch of the nozzle holes 56 a and 66 a of the first cleaning liquid nozzle 56 and the second cleaning liquid nozzle 66 described above is held by the holding member 20.
  • C It is almost the same as the pitch of W.
  • the numerous nozzle holes 56a and 66a of the first cleaning liquid nozzle 56 and the second cleaning liquid nozzle 66 described above are arranged so that the cleaning liquid can be discharged between the wafers W held by the holding member 20. ing.
  • the base portion 24 of the holding member 20 is not shown in FIG.
  • the ultrasonic generator 30 is connected to the vibrator 38 attached to the bottom outer surface of the cleaning tank 12, the high-frequency drive power source 32 for driving the vibrator 38, and the high-frequency drive power source 32. And an ultrasonic oscillator 34.
  • a plurality of vibrators 38 are provided, and each vibrator 38 is arranged so as to partially occupy the outer surface of the bottom of the cleaning tank 12.
  • the ultrasonic generator 30 further includes an ultrasonic oscillator 34 and a drive switching mechanism 36 connected to each transducer 38.
  • the drive switching mechanism 36 drives the plurality of vibrators 38 as a whole, and individually drives one or two or more vibrators 38. Both are possible.
  • the ultrasonic wave propagates to the cleaning liquid stored in the cleaning tank 12 through the bottom of the cleaning tank 12, whereby the ultrasonic wave is applied to the cleaning liquid in the cleaning tank 12.
  • the ultrasonic generator 30 is connected to the control device 18, and the control device 18 controls the application of ultrasonic waves to the cleaning liquid.
  • control device 18 As described above, the control device 18 is connected to each component of the substrate cleaning device 10 and controls the operation of each component.
  • the control device 18 includes a computer, and when the computer executes a program stored in the recording medium 19 in advance, cleaning of the wafer W to be processed using the substrate cleaning device 10 is performed. Come on! /
  • pure water is supplied from the cleaning liquid source 72 to the third supply pipe 70 as a cleaning liquid.
  • the cleaning liquid flowing through the third supply pipe 70 is degassed by the degassing device 75, and a third cleaning liquid having a dissolved gas concentration of 0% is generated by rounding off after the decimal point. Thereafter, a part of the third cleaning liquid having a dissolved gas concentration of Oppm flows into the first supply pipe 50 via the branch pipe 43 and the rest flows into the second supply pipe 60.
  • the third cleaning liquid flowing into the first supply pipe 50 can dissolve nitrogen as a gas that is difficult to dissolve, by the first dissolving device 55. In this way, the first cleaning liquid in which nitrogen is dissolved at a predetermined concentration is obtained from the third cleaning liquid.
  • the amount of nitrogen dissolved in the first cleaning solution is determined in consideration of the flow rate of the second cleaning solution flowing into
  • the supply amount of the first cleaning liquid is determined by the control device 18 adjusting the opening of the flow meter 52 according to a preset program.
  • the control device 18 controls the temperature adjustment device 58 according to a preset program.
  • the first cleaning liquid having a predetermined temperature is supplied to the cleaning tank 12 at a predetermined concentration (ppm) and a supply amount (1 / min).
  • the third cleaning liquid flowing into the second supply pipe 60 is dissolved by the second dissolving device 65.
  • Carbon dioxide as a soot gas can be dissolved.
  • a second cleaning liquid in which carbon dioxide is dissolved at a predetermined concentration is obtained from the third cleaning liquid.
  • the flow rate of the first cleaning liquid flowing from the first supply pipe 50 to the cleaning tank 12 and the cleaning tank from the second supply pipe 60 so that the dissolved carbon dioxide concentration of the cleaning liquid in the cleaning tank 12 is 330 ppm.
  • the amount of carbon dioxide dissolved in the second cleaning liquid is determined in consideration of the flow rate of the second cleaning liquid flowing to 12.
  • the supply amount of the second cleaning liquid is determined by the controller 18 adjusting the opening of the flow meter 62 according to a preset program. Further, the control device 18 controls the temperature adjustment device 68 according to a preset program. As a result, the second cleaning liquid having a predetermined temperature is supplied to the cleaning tank 12 at a predetermined concentration (ppm) and a supply amount (1 / min).
  • the cleaning liquid in which nitrogen and carbon dioxide are dissolved at a predetermined dissolved gas concentration is stored in the cleaning tank 12.
  • the holding member 20 holding a predetermined number (for example, 50) of wafers W to be processed is lowered and the wafer W to be processed is immersed in the cleaning liquid in the cleaning tank 12.
  • control device 18 operates the ultrasonic generator 30 to generate ultrasonic waves in the cleaning liquid in the cleaning tank 12.
  • the wafer W immersed in the cleaning tank 12 is subjected to ultrasonic cleaning (megasonic processing).
  • the particulate matter (dirt etc.) adhering to the surface of the wafer W is removed.
  • the first cleaning liquid is supplied from the first supply pipe 50 into the cleaning tank 12, and the second cleaning liquid is supplied from the second supply pipe 60 into the cleaning tank 12.
  • the first cleaning liquid is discharged obliquely upward between the two wafers W held by the holding member 20.
  • the second cleaning liquid is also discharged obliquely upward between the two wafers W held by the holding member 20. Therefore, by discharging the first cleaning liquid and the second cleaning liquid, particles removed from the wafer W are promoted to float up to the liquid level of the cleaning liquid in the cleaning tank 12, and are further removed from the cleaning tank 12. Promoted to overflow into tank 15.
  • the particles once removed from the wafer W can be prevented from reattaching to other portions of the wafer W.
  • the supply time may be limited, or the cleaning liquid may not be supplied at all.
  • the cleaning liquid in the cleaning tank 12 includes a gas that is not easily dissolved in the cleaning liquid (nitrogen) and a gas that is easily dissolved in the cleaning liquid (carbon dioxide). Is dissolved.
  • the damage of the wiring pattern formed on the wafer W is greatly suppressed by the action of the gas that is difficult to dissolve in the cleaning liquid and the action of the gas! On the other hand, particles can be removed from the wafer W with high removal efficiency.
  • the ultrasonic cleaning step for generating ultrasonic waves in the cleaning liquid in the cleaning tank 12 as described above continues, for example, for about 5 minutes. After that, the ultrasonic irradiation by the ultrasonic generator 30 stops.
  • the ultrasonic cleaning process ends.
  • the holding member 20 is raised, and the internal force of the cleaning tank 12 is also carried out of the wafer. As described above, a series of cleaning steps for the wafer W to be processed is completed.
  • the cleaning tank when ultrasonic waves are generated in the cleaning liquid in the cleaning tank 12, the cleaning tank easily dissolves in the cleaning liquid! /, And the gas and the gas difficult to dissolve in the cleaning liquid. It is dissolved in the cleaning solution in 12. Easily soluble gas that dissolves in the cleaning solution actively generates cavity. By this calibration, particles can be removed from the wafer W with high removal efficiency.
  • the easily dissolved gas dissolved in the cleaning liquid is difficult to generate a cavity and thus is less likely to be bubbled. The easily dissolved gas absorbs the shock wave propagating due to the cavity while being dissolved in the cleaning liquid. Therefore, damage to the pattern formed on the wafer W can be prevented.
  • a chemical liquid such as SC1 (ammonia overwater: NH 4 OH / H 2 O / H 2 O) may be used as the cleaning liquid, and the wafer W to be processed may be ultrasonically cleaned.
  • SC1 ammonia overwater: NH 4 OH / H 2 O / H 2 O
  • a rinsing cleaning process using pure water is required after the cleaning process with the chemical solution.
  • the above-described substrate cleaning method using pure water can also be employed.
  • the present invention is not limited thereto.
  • a mixed supply pipe 80 connected to the first supply pipe 50 and the second supply pipe 60 is further provided, and the first cleaning liquid and the second cleaning liquid are mixed and supplied to the cleaning tank 12. You can make it! /
  • the first supply pipe 50 and the second supply pipe 60 are connected to the mixing supply pipe 80 via the mixing valve 82.
  • the temperature adjustment mechanism 88 is provided in the mixing supply pipe 80, and the temperature adjustment mechanism is not provided in the first supply pipe 50 and the second supply pipe 60. The temperature control mechanism 88 adjusts the temperature of the cleaning liquid supplied from the mixing supply pipe 80 into the cleaning tank 12.
  • FIG. 5 The modified example shown in Fig. 5 is further provided with a mixing supply pipe 80 and a mixing valve 82, and only the arrangement position of the temperature control mechanism is different. Others are shown in Figs. 1 to 4 The form is substantially the same. In FIG. 5, the same components as those in the embodiment shown in FIGS. 1 to 4 are denoted by the same reference numerals, and detailed description thereof is omitted.
  • the first supply pipe 50 and the second supply pipe 60 may be connected in series.
  • the first cleaning liquid flows from the first supply pipe 50 into the second supply pipe 60, and after the gas that is easily dissolved in the cleaning liquid is dissolved, the gas that is easily dissolved and the gas that is difficult to dissolve are mixed.
  • the cleaning liquid in which both are dissolved may be supplied to the cleaning tank 12, or the second cleaning liquid flows from the second supply pipe 60 to the first supply pipe 50 and is not easily dissolved in this cleaning liquid. After the gas has been dissolved, the solution is dissolved! Do it like that.
  • the dissolved gas concentration of each cleaning liquid is merely an example, and various changes can be made.
  • the substrate cleaning apparatus 10 includes the control device 18 including a computer.
  • the control device 18 operates each component of the substrate cleaning device 10 so that the wafer W to be processed is cleaned.
  • the program executed by the computer of the control device 18 in order to perform the cleaning of the wafer W using the substrate cleaning device 10 is also the subject of this case.
  • the computer-readable recording medium 19 that records the program is also the subject of this case.
  • the recording medium 19 includes those that can be recognized as a single unit such as a floppy disk (flexible disk) and a hard disk drive.
  • the present invention is not limited, and it can be applied to cleaning processing of LCD substrates and CD substrates.
  • a cleaning solution in which nitrogen was dissolved at different dissolved gas concentrations was stored in a cleaning tank, and a test wafer was immersed in the cleaning liquid in the cleaning tank to generate ultrasonic waves in the cleaning liquid.
  • the cleaning solution used in this experiment was degassed until the dissolved gas concentration reached Oppm, and then nitrogen was dissolved in the cleaning solution at a different dissolved gas concentration. In other words, only nitrogen as a gas is dissolved in the cleaning liquid in the cleaning tank.
  • the experiment was conducted with five concentrations of dissolved nitrogen: 8 ppm, 10 ppm, 12 ppm, 14 ppm, and 16 ppm.
  • Conditions other than the dissolved gas concentration were the general conditions used for ultrasonic cleaning of the wafer.
  • the time for generating ultrasonic waves was 10 minutes.
  • 4000 particles were uniformly deposited in advance.
  • FIGS. 1 and 2 multiple wafers can be accommodated and the lower side is washed.
  • a washing tank provided with a washing nozzle for supplying the clean solution was used in this experiment.
  • Figure 7 shows the results of wafer observations when the dissolved nitrogen concentration is 14 ppm and when it is 16 ppm.
  • the shaded area is the area where particles are visually recognized as being removed with high removal efficiency.
  • the layout of the test wafers on the paper in Fig. 7 corresponds to the layout of the test wafers in the cleaning tank.
  • the lower portion of the test wafer on the paper surface of FIG. 7 is the portion that was disposed on the lower side of the cleaning tank (the vibrator side of the ultrasonic generator) during ultrasonic cleaning.
  • the dissolved gas concentration of nitrogen is 14 ppm and the dissolved gas concentration of carbon dioxide is different! /
  • the cleaning solution is stored in the cleaning bath, and the test wafer is immersed in the cleaning solution in the cleaning bath. Ultrasonic waves were generated.
  • the cleaning solution used in this experiment was degassed until the dissolved gas concentration was SOppm, and then the dissolved gas concentration of nitrogen was adjusted to 14ppm and the dissolved gas concentration of carbon dioxide was adjusted. In other words, only nitrogen and carbon dioxide are dissolved in the cleaning liquid in the cleaning tank.
  • the experiment was conducted with the dissolved concentration of carbon dioxide set to Oppm (comparative example) and 330 ppm (example). Ultrasonic cleaning was performed for 4 minutes. Pure water was used as the cleaning liquid. The ultrasonic output was 96W.
  • the test wafer had 4000 particles uniformly adhered in advance, and was further provided with approximately 100 billion protrusions for damage evaluation. Using.
  • the particle removal efficiency was substantially the same when the dissolved gas concentration of carbon dioxide was Oppm and when it was 33 Oppm. In other words, when carbon dioxide is dissolved at a dissolved gas concentration of 330 ppm, it has the same particle removal effect as when carbon dioxide is not dissolved, and it is greatly damaged compared to when carbon dioxide is not dissolved. Can be reduced.
  • the results in Table 2 are the results when the temperature of the cleaning liquid in the cleaning tank was 28 ° C.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Liquid Crystal (AREA)

Abstract

La présente invention concerne un procédé de nettoyage de substrat qui permet d'éliminer avec un degré élevé d'efficacité des particules du substrat à traiter, tandis que sont supprimés de manière remarquable les dommages d'un motif de câblage. Dans ce procédé de nettoyage de substrat, les particules (poussières ou autres) collées au substrat (W) à traiter sont éliminées par immersion du substrat dans une solution de nettoyage et par génération des ultrasons dans cette solution. Le procédé de nettoyage du substrat comprend une étape d'immersion du substrat dans la solution de nettoyage contenue dans un réservoir de nettoyage (12) et une étape de génération des ultrasons dans la solution de nettoyage contenue dans le réservoir. Dans l'étape de génération des ultrasons, un gaz facilement soluble dans la solution et un gaz difficilement soluble dans la solution sont dissous dans la solution de nettoyage du réservoir.
PCT/JP2007/070811 2006-10-27 2007-10-25 Appareil et procédé de nettoyage de substrat, programme et support d'enregistrement WO2008050832A1 (fr)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013135037A (ja) * 2011-12-26 2013-07-08 Siltronic Ag 超音波洗浄方法
JP2013136024A (ja) * 2011-12-28 2013-07-11 Shibaura Mechatronics Corp 処理液生成装置、処理液生成方法、基板処理装置及び基板処理方法
JP2016076588A (ja) * 2014-10-06 2016-05-12 オルガノ株式会社 炭酸ガス溶解水供給システム、炭酸ガス溶解水供給方法、およびイオン交換装置
CN106140722A (zh) * 2016-08-12 2016-11-23 嘉兴百盛光电有限公司 一种多功能超声波清洗机的供水单元

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JP2003234320A (ja) * 2002-02-06 2003-08-22 Nec Electronics Corp 基板の洗浄方法、洗浄薬液、洗浄装置及び半導体装置
JP2004281894A (ja) * 2003-03-18 2004-10-07 Matsushita Electric Ind Co Ltd 電子材料用洗浄水、その製造方法および電子材料の洗浄方法
JP2005296868A (ja) * 2004-04-14 2005-10-27 Tokyo Electron Ltd 超音波洗浄処理方法及びその装置
JP2006179765A (ja) * 2004-12-24 2006-07-06 Dainippon Screen Mfg Co Ltd 基板処理装置およびパーティクル除去方法

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JP2000098321A (ja) * 1998-09-25 2000-04-07 Toshiba Corp 洗浄方法および洗浄装置
CN1849182A (zh) * 2003-06-11 2006-10-18 艾奎昂技术股份有限公司 用过饱和清洁溶液进行强超声波清洁

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JPH10242107A (ja) * 1997-02-18 1998-09-11 Internatl Business Mach Corp <Ibm> 超小型電子回路基板の改良された洗浄方法
JP2003234320A (ja) * 2002-02-06 2003-08-22 Nec Electronics Corp 基板の洗浄方法、洗浄薬液、洗浄装置及び半導体装置
JP2004281894A (ja) * 2003-03-18 2004-10-07 Matsushita Electric Ind Co Ltd 電子材料用洗浄水、その製造方法および電子材料の洗浄方法
JP2005296868A (ja) * 2004-04-14 2005-10-27 Tokyo Electron Ltd 超音波洗浄処理方法及びその装置
JP2006179765A (ja) * 2004-12-24 2006-07-06 Dainippon Screen Mfg Co Ltd 基板処理装置およびパーティクル除去方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013135037A (ja) * 2011-12-26 2013-07-08 Siltronic Ag 超音波洗浄方法
JP2013136024A (ja) * 2011-12-28 2013-07-11 Shibaura Mechatronics Corp 処理液生成装置、処理液生成方法、基板処理装置及び基板処理方法
JP2016076588A (ja) * 2014-10-06 2016-05-12 オルガノ株式会社 炭酸ガス溶解水供給システム、炭酸ガス溶解水供給方法、およびイオン交換装置
CN106140722A (zh) * 2016-08-12 2016-11-23 嘉兴百盛光电有限公司 一种多功能超声波清洗机的供水单元

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