EP1588409A1 - Composant semi-conducteur a couche mince et son procede de production - Google Patents

Composant semi-conducteur a couche mince et son procede de production

Info

Publication number
EP1588409A1
EP1588409A1 EP04705375A EP04705375A EP1588409A1 EP 1588409 A1 EP1588409 A1 EP 1588409A1 EP 04705375 A EP04705375 A EP 04705375A EP 04705375 A EP04705375 A EP 04705375A EP 1588409 A1 EP1588409 A1 EP 1588409A1
Authority
EP
European Patent Office
Prior art keywords
semiconductor body
carrier
thin film
film semiconductor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP04705375A
Other languages
German (de)
English (en)
Inventor
Peter Stauss
Andreas PLÖSSL
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE10303978A external-priority patent/DE10303978A1/de
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of EP1588409A1 publication Critical patent/EP1588409A1/fr
Withdrawn legal-status Critical Current

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Classifications

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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table

Definitions

  • the invention relates to a semiconductor component according to the preamble of patent claim 1 and a method for its production according to the preamble of patent claim 13.
  • Semiconductor components of the type mentioned contain a thin film semiconductor body and a carrier on which the semiconductor body is attached.
  • Thin-film semiconductor bodies are used, for example, in optoelectronic components in the form of thin-film light-emitting diode chips.
  • a thin-film light-emitting diode chip is characterized in particular by the following characteristic features: on a first one facing a carrier element
  • a reflective layer is applied or formed on the main surface of a radiation-generating epitaxial layer sequence, which reflects at least some of the electromagnetic radiation generated in the epitaxial layer sequence back into the latter;
  • a thin-film light-emitting diode chip is a Lambert surface emitter in good approximation;
  • the epitaxial layer sequence has a thickness in the range of 20 ⁇ m or less, in particular in the range of 10 ⁇ m; and the epitaxial layer sequence contains at least one semiconductor layer with at least one surface which has a mixing structure which, in the ideal case, leads to an approximately ergodic distribution of the light in the epitaxial epitaxial layer sequence, ie it has a scattering behavior that is as ergodic as possible.
  • a basic principle of a thin-film light-emitting diode chip is described, for example, in I. Schnitzer et al. , Appl. Phys. Lett. 63 (16), October 18, 1993, 2174 - 2176, the disclosure content of which is hereby incorporated by reference. It should be noted that while the present invention relates particularly to thin film light emitting diode chips, it is not so limited. Rather, the present invention is suitable not only for thin-film light-emitting diode chips but also for all other thin-film semiconductor bodies.
  • a semiconductor layer is first produced on a suitable substrate, subsequently connected to the carrier and then detached from the substrate.
  • a plurality of semiconductor bodies are produced, each of which is attached to the corresponding carrier.
  • the substrate used to produce the semiconductor layer is removed from the semiconductor layer and does not simultaneously serve as a carrier in the component.
  • This manufacturing process has the advantage that different materials can be used for the substrate and the carrier.
  • the respective materials can thus be adapted largely independently of one another to the different requirements for the production of the semiconductor layer on the one hand and the operating conditions on the other hand.
  • the carrier can thus be optimized in accordance with its mechanical, thermal and optical properties, while the substrate is selected in accordance with the requirements for producing the semiconductor layer.
  • the epitaxial production of a semiconductor layer in particular places numerous special demands on the epitaxial substrate.
  • the substrate should withstand the epitaxial conditions, in particular temperatures up to over 1000 ° C., and be suitable for the epitaxial growth and growth of a layer of the semiconductor material in question that is as homogeneous as possible.
  • Detachment of the semiconductor layer from the epitaxial substrate can be achieved, for example, by irradiating the semiconductor-substrate interface with laser radiation.
  • the laser radiation is absorbed in the vicinity of the interface and there causes an increase in temperature until the semiconductor material decomposes.
  • Such a method is known for example from the publication WO 98/14986.
  • the frequency-tripled radiation of a Q-switched Nd: Yag laser at 355 nm is used.
  • the laser radiation is radiated through the transparent sapphire substrate onto the semiconductor layer and in an approximately 100 nm thick boundary layer
  • GaN substrate GaN arsenide substrate
  • thinning for example grinding the carrier after the semiconductor layer has been applied and detached from the epitaxial substrate, as a result of which the effort involved in production and the risk of breakage in the carrier increase.
  • this component should be technically simple and inexpensive to manufacture. Furthermore, it is an object of the invention to provide a corresponding manufacturing process.
  • germanium carriers it is provided according to the invention to form a semiconductor component with a thin film semiconductor body, which is arranged on a carrier containing germanium.
  • a germanium substrate is preferably used as the carrier.
  • these carriers are briefly referred to as "germanium carriers”.
  • a thin film semiconductor body is to be understood as a substrate-free semiconductor body, that is to say an epitaxially manufactured semiconductor body, from which the epitaxial substrate on which the semiconductor body was originally grown has been removed.
  • the semiconductor body can be glued to the germanium carrier, for example.
  • a soldered connection is preferably formed between the thin film semiconductor body and the carrier.
  • Such a solder joint generally has a higher temperature resistance and better thermal conductivity than adhesive joints.
  • an electrically good conductive connection between the carrier and the semiconductor body is created by means of a soldered connection without additional effort, which connection can also serve for contacting the semiconductor body.
  • Germanium carriers are much easier to process than arsenic carriers, with no toxic arsenic waste in particular. This will reduce the overall manufacturing effort. Furthermore, germanium carriers are characterized by a higher mechanical stability, which makes it possible to use thinner carriers and, in particular, to do without subsequent grinding of the carrier for thinning. After all, germanium carriers are significantly cheaper than comparable GaAs carriers.
  • the thin film semiconductor body is soldered onto the germanium carrier.
  • a gold-germanium solder connection is preferably formed for this purpose.
  • a firm, temperature-resistant and electrically and thermally highly conductive connection is thus achieved. Since the melting temperature of the gold-germanium compound that is produced is higher than the temperatures that usually arise during assembly of a finished component, for example when soldering onto a printed circuit board, the
  • the invention is particularly suitable for semiconductor bodies based on III-V compound semiconductors, including in particular the compounds Al x Ga ⁇ - x As with O ⁇ x ⁇ l, In x Al y Ga ⁇ - x - y P, In x As y Ga ⁇ - x _ y P, In x Al y Ga ⁇ - x _ y As, In x Al y Ga ! - x - y N, each with O ⁇ x ⁇ l, 0 ⁇ y-sl, O ⁇ x + y ⁇ l, and In x Ga ⁇ - x As ⁇ - y N y with O ⁇ x ⁇ l, O ⁇ y ⁇ l are to be understood.
  • III-V compound semiconductors including in particular the compounds Al x Ga ⁇ - x As with O ⁇ x ⁇ l, In x Al y Ga ⁇ - x - y P, In x As y Ga ⁇ - x _ y P, In x Al y Ga ⁇ - x _ y As
  • Sapphire or silicon carbide substrates are often used for the epitaxial production of the aforementioned nitride compound semiconductor In x Al y Ga ⁇ - x - y N. Since sapphire substrates are on the one hand electrically insulating and therefore do not allow vertically conductive component structures, and on the other hand silicon carbide substrates are comparatively expensive and brittle and therefore require complex processing, the further processing of nitride-based semiconductor bodies as thin film semiconductor bodies, that is to say without an epitaxial substrate, is special advantageous.
  • the thin film semiconductor body is first grown on a substrate, subsequently a germanium carrier, such as a germanium wafer, is applied to the side of the carrier facing away from the substrate, and then the thin film semiconductor body
  • the thin film semiconductor body is preferably soldered onto the carrier.
  • a gold layer is applied to the carrier and the thin film semiconductor body on the connection side. These gold layers are subsequently brought into contact, the pressure and temperature being chosen so that a gold-germanium melt is formed which solidifies to form a gold-germanium eutectic.
  • the gold layer can also be applied only to the carrier or the thin-film semiconductor body. It is also possible to apply a gold-germanium alloy instead of the gold layer or layers. Since the carrier itself contains germanium, on the one hand alloy problems as can occur with GaAs substrates are avoided. On the other hand, the germanium carrier with respect to the gold germanium Melt a germanium reservoir that facilitates the formation of the eutectic.
  • the substrate can be removed by means of a grinding or etching process. These steps are preferably combined so that the substrate is first ground down to a thin residual layer and then the remaining layer is etched off.
  • An etching process is particularly suitable for semiconductor layers on In x Al y Ga ⁇ _ x - y P- or In x As y Ga ⁇ - x . y P base grown on a GaAs epitaxial substrate.
  • the etching depth is expediently set by means of an etching stop, so that the GaAs epitaxial substrate is etched down to the semiconductor layers based on In x Al y Gaai x - y P or In x As y Ga ⁇ _ x - y P.
  • the substrate is preferably detached by means of laser radiation.
  • the substrate-semiconductor interface is irradiated with laser radiation through the substrate.
  • the radiation is absorbed in the vicinity of the interface between the semiconductor layer and the substrate and there leads to a temperature increase until the semiconductor material decomposes, the substrate detaching from the semiconductor layer.
  • a Q-switched Nd YAG laser with frequency tripling or an excimer
  • Laser which emits in the ultraviolet spectral range, for example.
  • pulsed operation of the excimer laser is advisable.
  • pulse durations of less than or equal to 10 ns have proven to be advantageous.
  • FIG. 1 shows a schematic illustration of an exemplary embodiment of a semiconductor component according to the invention
  • FIGS. 2a to 2d show a schematic representation of a first exemplary embodiment of a production method according to the invention using four intermediate steps
  • FIGS. 3a to 3e show a schematic illustration of a second exemplary embodiment of a production method according to the invention using five intermediate steps.
  • the semiconductor component shown in FIG. 1 has a carrier 4 in the form of a germanium substrate, on which a thin film semiconductor body 2 is fastened by means of a solder layer 5.
  • the thin film semiconductor body 2 preferably comprises a plurality of semiconductor layers that were first grown on an epitaxial substrate (not shown) that was removed after the semiconductor body had been applied to the carrier 4.
  • the design as a thin film component is particularly suitable for radiation-emitting semiconductor bodies, since absorption of the radiation generated and thus a reduction in the radiation yield in the epitaxial substrate is avoided.
  • the semiconductor layers can be arranged in the form of a radiation-generating pn junction, which can furthermore contain a single or multiple quantum well structure.
  • a mirror layer is preferably arranged between the radiation-emitting layer of the thin-film semiconductor body and the germanium carrier. This layer reflects the radiation components emitted in the direction of the germanium carrier and thus increases the radiation yield.
  • WEI The mirror layer is preferably embodied as a metallic layer, which can be arranged in particular between the layer formed by the soldered connection and the thin-film semiconductor body. Highly reflecting mirrors can be formed, for example, by first arranging a dielectric layer on the thin film semiconductor body and then the preferably metallic mirror layer, the mirror layer advantageously being partially interrupted for the electrical contacting of the thin film semiconductor body.
  • germanium carrier being used instead of the GaAs carrier. Since the thermal expansion coefficient of germanium is similar to the thermal expansion coefficient of gallium arsenide, it is usually possible to replace conventional GaAs substrates with germanium substrates without additional effort in the manufacture and without deterioration of the component properties. In contrast, germanium is characterized by a slightly higher thermal conductivity compared to gallium arsenide.
  • germanium substrates are also advantageous because of their low price, their easier processing and their comparatively high mechanical stability.
  • GaAs substrates with a thickness of over 600 ⁇ m can be exchanged for germanium substrates with a thickness of 200 ⁇ m, which means that subsequent thinning of the substrate can be omitted.
  • FIG. 2a a semiconductor body 2 is applied to a substrate 1.
  • the semiconductor body 2 can also have a plurality of individual layers, for example on
  • the semiconductor body 2 is provided with a metallization 3a on the side facing away from the substrate.
  • a gold layer is preferably evaporated.
  • a germanium carrier 4 is provided, on which a metallization 3b, preferably also a gold layer, is applied in a corresponding manner.
  • metallizations 3a, 3b serve on the one hand to form the soldered connection between the semiconductor body 2 and the substrate 1 and on the other hand form an electrically good conductive ohmic contact.
  • one of the gold layers 3a, 3b can be used
  • Gold-antimony layer 3c are applied, antimony serving as the n-doping of the contact to be formed.
  • antimony arsenic or phosphorus can also be used for doping.
  • a p-contact can also be formed, for example with an aluminum, gallium or indium doping.
  • only one metallization 3a or 3b can be used within the scope of the invention, which is applied either to the semiconductor body 2 or to the germanium carrier 4.
  • the germnium carrier 4 and the substrate 1 are joined together with the semiconductor body 2, the temperature and pressure being selected so that the metallization 3a, 3b, 3c melts and subsequently solidifies as a soldered connection.
  • a gold-germanium melt initially forms, which forms on cooling optionally forms antimony-doped gold germanium eutectic as a solder joint.
  • Protrusions and other surface shapes deviating from one plane can advantageously also be enveloped (accommodated) with this melt, so that, in contrast to conventional methods, it is possible to deviate from a plane-parallel melt front.
  • particles on the surface of the semiconductor body are enveloped by the melt and embedded in the soldered connection.
  • the substrate 1 is removed.
  • the substrate 1 is first ground down to a thin residual layer and then the residual layer is etched off.
  • a thin film semiconductor body 2 remains, which is soldered onto a germanium carrier 4.
  • this method is particularly advantageous for In x Al y Ga ⁇ _ x -yP-based semiconductor bodies on GaAs epitaxial substrates.
  • the substrate is lifted off by means of a laser detachment method.
  • a semiconductor body 2 preferably based on a nitride compound semiconductor, is grown on a substrate 1.
  • the semiconductor body 2 can comprise a plurality of individual layers and can be designed as a radiation-emitting semiconductor body.
  • a sapphire substrate is particularly suitable as substrate 1.
  • the solder joint 5 is removed speaking formed the previous embodiment.
  • two gold layers can be provided as described there, which are applied on the one hand to the carrier and on the other hand to the semiconductor body.
  • the semiconductor layer 2 is irradiated with a laser beam 6 through the substrate 1.
  • the radiation energy is predominantly absorbed close to the interface between the semiconductor layer 2 and the substrate 1 in the semiconductor layer 2 and causes material decomposition at the interface, so that the substrate 1 can subsequently be lifted off.
  • the strong mechanical loads that occur due to material decomposition are absorbed by the solder layer, so that even semiconductor layers with a thickness of a few micrometers can be detached from the substrate without destruction.
  • An excimer laser in particular a XeF excimer laser, or a Q-switched Nd: YAG laser with frequency tripling is advantageous as the radiation source.
  • the laser radiation is preferably focused by means of suitable optics through the substrate onto the semiconductor layer 2, so that the energy density on the semiconductor surface is between 100 mJ / cm 2 and 1000 mJ / cm 2 , preferably between 200 mJ / cm 2 and 800 mJ / cm 2 lies.
  • the substrate 1 can thus be lifted off the semiconductor body without residues, FIG. 3e. This type of separation advantageously enables the substrate to be used again as an epitaxial substrate.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Lasers (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

L'invention concerne un composant semi-conducteur comprenant un corps semi-conducteur à couche mince (2) placé sur un support (4) contenant du germanium. L'invention concerne également un procédé pour la production d'un tel composant semi-conducteur.
EP04705375A 2003-01-31 2004-01-27 Composant semi-conducteur a couche mince et son procede de production Withdrawn EP1588409A1 (fr)

Applications Claiming Priority (3)

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DE10303978A DE10303978A1 (de) 2002-01-31 2003-01-31 Dünnfilmhalbleiterbauelement und Verfahren zu dessen Herstellung
DE10303978 2003-01-31
PCT/DE2004/000121 WO2004068567A1 (fr) 2003-01-31 2004-01-27 Composant semi-conducteur a couche mince et son procede de production

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KR20050122200A (ko) 2005-12-28
KR101058302B1 (ko) 2011-08-22
US20060180804A1 (en) 2006-08-17
JP2006518102A (ja) 2006-08-03
KR20110010839A (ko) 2011-02-07
CN1745458A (zh) 2006-03-08
TWI237909B (en) 2005-08-11
JP4904150B2 (ja) 2012-03-28

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