WO2009121314A1 - Composant semiconducteur émettant un rayonnement et procédé de fabrication d'un composant semiconducteur émettant un rayonnement - Google Patents
Composant semiconducteur émettant un rayonnement et procédé de fabrication d'un composant semiconducteur émettant un rayonnement Download PDFInfo
- Publication number
- WO2009121314A1 WO2009121314A1 PCT/DE2009/000333 DE2009000333W WO2009121314A1 WO 2009121314 A1 WO2009121314 A1 WO 2009121314A1 DE 2009000333 W DE2009000333 W DE 2009000333W WO 2009121314 A1 WO2009121314 A1 WO 2009121314A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- radiation
- semiconductor
- heat dissipation
- carrier
- connection
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 330
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 230000005855 radiation Effects 0.000 claims abstract description 108
- 230000017525 heat dissipation Effects 0.000 claims abstract description 95
- 239000000463 material Substances 0.000 claims description 54
- 238000006243 chemical reaction Methods 0.000 claims description 37
- 239000002131 composite material Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 239000010410 layer Substances 0.000 description 96
- 150000001875 compounds Chemical class 0.000 description 19
- 238000004382 potting Methods 0.000 description 15
- 238000004088 simulation Methods 0.000 description 13
- 238000002310 reflectometry Methods 0.000 description 12
- 230000003595 spectral effect Effects 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 238000000605 extraction Methods 0.000 description 8
- 239000012790 adhesive layer Substances 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 7
- 230000007423 decrease Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229920001296 polysiloxane Polymers 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000003631 wet chemical etching Methods 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 238000005266 casting Methods 0.000 description 4
- 238000003486 chemical etching Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000001154 acute effect Effects 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000009103 reabsorption Effects 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009102 absorption Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
Definitions
- a base area of the semiconductor body is at least 4%, particularly preferably at least 10%, of the maximum area of the recess in the lateral direction. The larger the base area of the semiconductor body relative to this maximum area of the recess, the larger the proportion of the surface that is effectively involved in generating the radiation.
- connection carrier 3 on which a connection surface 31 is formed.
- a contact surface 25 formed on the side of the semiconductor body 2 facing the connection carrier 3 is connected in an electrically conductive manner to the connection surface 31.
- the electrically conductive connection can be formed, for example, by means of a contacting layer, which may contain about a solder or an electrically conductive adhesive (not explicitly shown).
- a bonding wire is not required for the electrical contacting of the semiconductor body.
- a 100 ⁇ m thick conversion layer is arranged at a distance from the semiconductor body.
- the lateral extent of the recess is 1.2 microns.
- the radiation can therefore escape through a coupling-out window whose width is three times as large as the width of the semiconductor body.
- the maximum temperature occurring in the conversion layer is about 391 K.
- the heat can be efficiently spread in the lateral direction.
- the maximum temperature can also be much lower. For example, simulations for primary radiation power of 100 mW resulted in a temperature increase of only 30 K relative to a temperature of the connection carrier of 300 K.
- FIG. 5B shows the extraction efficiency E of the secondary radiation generated in the conversion layer from the radiation-emitting semiconductor component.
- the simulations have a silver mirror layer for the side surfaces and one for the semiconductor body Reflectivity of 80% for secondary radiation.
- the curve 503 shows the profile for a semiconductor component implemented according to the fourth exemplary embodiment, and the curve 513 shows a corresponding profile for the fifth exemplary embodiment.
- curves 601 and 602 the surrounding material is air, and curves 603 and 604 are silicone.
- the curves 601 and 603 were each based on a reflectivity of the semiconductor body of 80%, the curves 602 and 604 a reflectivity of 90%.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
L'invention concerne un composant semiconducteur (1) émettant un rayonnement et comportant au moins un corps semiconducteur (2) qui présente une superposition de couches semiconductrices dotée d'une zone active (21) destinée à générer un rayonnement. Le composant semiconducteur comporte en outre un support de connexion (3) pourvu d'une surface de connexion (31), sur laquelle est fixé le corps semiconducteur, et un corps dissipateur de chaleur (4) présentant au moins partiellement une couche miroir (5). Le corps dissipateur de chaleur (4) est relié par liaison de matière au support de connexion (3) et comporte un évidement (41) dans lequel est disposé le corps semiconducteur (2). L'invention porte également sur un procédé de fabrication d'un composant semiconducteur émettant un rayonnement.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE200810016534 DE102008016534A1 (de) | 2008-03-31 | 2008-03-31 | Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterbauelements |
| DE102008016534.4 | 2008-03-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2009121314A1 true WO2009121314A1 (fr) | 2009-10-08 |
Family
ID=40873281
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/DE2009/000333 WO2009121314A1 (fr) | 2008-03-31 | 2009-03-09 | Composant semiconducteur émettant un rayonnement et procédé de fabrication d'un composant semiconducteur émettant un rayonnement |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE102008016534A1 (fr) |
| WO (1) | WO2009121314A1 (fr) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014140505A1 (fr) * | 2013-03-14 | 2014-09-18 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de formation de diodes electroluminescentes |
| JP2016535937A (ja) * | 2013-11-07 | 2016-11-17 | コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． | Ｌｅｄを取り囲む全内部反射レイヤを伴うｌｅｄのためのサブストレート |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011110175A2 (fr) * | 2010-03-06 | 2011-09-15 | Blackbrite Aps | Extracteur de chaleur et de photons d'une del |
| EP2983217B1 (fr) * | 2013-04-04 | 2018-10-31 | Toshiba Lighting & Technology Corporation | Dispositif d'éclairage |
| DE102016112293A1 (de) * | 2016-07-05 | 2018-01-11 | Osram Opto Semiconductors Gmbh | Verfahren zum herstellen eines optoelektronischen bauelements und optoelektronisches bauelement |
| CN106205166A (zh) * | 2016-08-03 | 2016-12-07 | 刘国栋 | 一种大功率led交通灯 |
| FR3061603B1 (fr) * | 2016-12-29 | 2021-01-29 | Aledia | Dispositif optoelectronique a diodes electroluminescentes |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060054910A1 (en) * | 2004-09-14 | 2006-03-16 | Hideaki Takemori | Submount for light emitting diode and its manufacturing method |
| US20060091415A1 (en) * | 2004-10-29 | 2006-05-04 | Ledengin, Inc. (Cayman) | LED package with structure and materials for high heat dissipation |
| US20060186430A1 (en) * | 2005-02-23 | 2006-08-24 | Samsung Electro-Mechanics Co., Ltd. | Light emitting diode package and fabrication method thereof |
| WO2007032619A1 (fr) * | 2005-09-12 | 2007-03-22 | Kwang Hee Kim | Dispositif électroluminescent fixé à une surface réfléchissante |
| EP1848038A2 (fr) * | 2006-04-20 | 2007-10-24 | Alti-electronics Co., Ltd. | Boîtier DEL haute efficacité |
| US20070284605A1 (en) * | 2006-06-13 | 2007-12-13 | Ying-Tso Chen | Casting for an LED module |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6274924B1 (en) * | 1998-11-05 | 2001-08-14 | Lumileds Lighting, U.S. Llc | Surface mountable LED package |
| EP1187226B1 (fr) * | 2000-09-01 | 2012-12-26 | Citizen Electronics Co., Ltd. | LED pour montage en surface et son procédé de fabrication |
| US20030057421A1 (en) * | 2001-09-27 | 2003-03-27 | Tzer-Perng Chen | High flux light emitting diode having flip-chip type light emitting diode chip with a transparent substrate |
| WO2004102685A1 (fr) * | 2003-05-14 | 2004-11-25 | Nano Packaging Technology, Inc. | Dispositif electroluminescent, structure de boitier de ce dispositif et procede de fabrication correspondant |
| DE102005009066A1 (de) * | 2005-02-28 | 2006-09-07 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optischen und eines strahlungsemittierenden Bauelementes und optisches sowie strahlungsemittierendes Bauelement |
| WO2007058438A1 (fr) * | 2005-11-18 | 2007-05-24 | Amosense Co., Ltd. | Boitier de composants electroniques |
-
2008
- 2008-03-31 DE DE200810016534 patent/DE102008016534A1/de not_active Withdrawn
-
2009
- 2009-03-09 WO PCT/DE2009/000333 patent/WO2009121314A1/fr active Application Filing
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060054910A1 (en) * | 2004-09-14 | 2006-03-16 | Hideaki Takemori | Submount for light emitting diode and its manufacturing method |
| US20060091415A1 (en) * | 2004-10-29 | 2006-05-04 | Ledengin, Inc. (Cayman) | LED package with structure and materials for high heat dissipation |
| US20060186430A1 (en) * | 2005-02-23 | 2006-08-24 | Samsung Electro-Mechanics Co., Ltd. | Light emitting diode package and fabrication method thereof |
| WO2007032619A1 (fr) * | 2005-09-12 | 2007-03-22 | Kwang Hee Kim | Dispositif électroluminescent fixé à une surface réfléchissante |
| EP1848038A2 (fr) * | 2006-04-20 | 2007-10-24 | Alti-electronics Co., Ltd. | Boîtier DEL haute efficacité |
| US20070284605A1 (en) * | 2006-06-13 | 2007-12-13 | Ying-Tso Chen | Casting for an LED module |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014140505A1 (fr) * | 2013-03-14 | 2014-09-18 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de formation de diodes electroluminescentes |
| FR3003403A1 (fr) * | 2013-03-14 | 2014-09-19 | Commissariat Energie Atomique | Procede de formation de diodes electroluminescentes |
| US9444010B2 (en) | 2013-03-14 | 2016-09-13 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Process for forming light-emitting diodes |
| JP2016535937A (ja) * | 2013-11-07 | 2016-11-17 | コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． | Ｌｅｄを取り囲む全内部反射レイヤを伴うｌｅｄのためのサブストレート |
| JP2020061574A (ja) * | 2013-11-07 | 2020-04-16 | ルミレッズ ホールディング ベーフェー | Ｌｅｄを取り囲む全内部反射レイヤを伴うｌｅｄのためのサブストレート |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102008016534A1 (de) | 2009-10-01 |
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