WO2007058438A1 - Boitier de composants electroniques - Google Patents

Boitier de composants electroniques Download PDF

Info

Publication number
WO2007058438A1
WO2007058438A1 PCT/KR2006/004413 KR2006004413W WO2007058438A1 WO 2007058438 A1 WO2007058438 A1 WO 2007058438A1 KR 2006004413 W KR2006004413 W KR 2006004413W WO 2007058438 A1 WO2007058438 A1 WO 2007058438A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
ceramic substrate
package
led
light emitting
Prior art date
Application number
PCT/KR2006/004413
Other languages
English (en)
Inventor
Young-Il Lee
Jong-Weon Park
Yun-Min Cho
Original Assignee
Amosense Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020050110938A external-priority patent/KR100658536B1/ko
Priority claimed from KR1020050122771A external-priority patent/KR100719077B1/ko
Application filed by Amosense Co., Ltd. filed Critical Amosense Co., Ltd.
Publication of WO2007058438A1 publication Critical patent/WO2007058438A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48095—Kinked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting

Abstract

La présente invention concerne un boîtier de composants électroniques permettant un excellent rayonnement thermique. Un élément de rayonnement thermique est noyé sous la zone de montage d’un dispositif électroluminescent sur un substrat de sorte à être séparé de la zone de montage du dispositif dans un sens vertical, et est exposé à la surface inférieure du substrat. Un élément de transfert thermique, ayant une conductivité thermique supérieure à celle du substrat, est formé entre la zone de montage du dispositif électroluminescent et l’élément de rayonnement thermique. Ainsi, du fait de l’excellente structure de rayonnement thermique du substrat, il est possible de propager rapidement la chaleur générée par le dispositif électroluminescent.
PCT/KR2006/004413 2005-11-18 2006-10-27 Boitier de composants electroniques WO2007058438A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020050110938A KR100658536B1 (ko) 2005-11-18 2005-11-18 어레이형 반도체 패키지
KR10-2005-0110938 2005-11-18
KR10-2005-0122771 2005-12-13
KR1020050122771A KR100719077B1 (ko) 2005-12-13 2005-12-13 반도체 패키지

Publications (1)

Publication Number Publication Date
WO2007058438A1 true WO2007058438A1 (fr) 2007-05-24

Family

ID=38048798

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2006/004413 WO2007058438A1 (fr) 2005-11-18 2006-10-27 Boitier de composants electroniques

Country Status (1)

Country Link
WO (1) WO2007058438A1 (fr)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008154952A1 (fr) * 2007-06-18 2008-12-24 Osram Gesellschaft mit beschränkter Haftung Composant électronique et procédé de fabrication d'un composant électronique
WO2009075530A2 (fr) * 2007-12-13 2009-06-18 Amoleds Co., Ltd. Semi-conducteur et son procédé de fabrication
DE102008016534A1 (de) * 2008-03-31 2009-10-01 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterbauelements
US8089086B2 (en) 2009-10-19 2012-01-03 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Light source
CN102840488A (zh) * 2012-09-11 2012-12-26 广东宏泰照明科技有限公司 具有散热功能的led灯
US8410672B2 (en) 2008-04-17 2013-04-02 Koinklijke Philips Electronics N.V. Thermally conductive mounting element for attachment of printed circuit board to heat sink
EP2667424A1 (fr) * 2012-05-25 2013-11-27 Kabushiki Kaisha Toshiba Dispositif électroluminescent semi-conducteur
WO2013174583A1 (fr) * 2012-05-24 2013-11-28 Epcos Ag Dispositif à diode électroluminescente
DE102012108107A1 (de) * 2012-08-31 2014-03-27 Epcos Ag Leuchtdiodenvorrichtung
JP2014067777A (ja) * 2012-09-25 2014-04-17 Stanley Electric Co Ltd 半導体発光素子
EP2523230A3 (fr) * 2011-05-13 2015-12-02 LG Innotek Co., Ltd. Paquet de dispositif électroluminescent et lampe à rayonnement ultraviolet le possédant
WO2016020537A1 (fr) * 2014-08-08 2016-02-11 Epcos Ag Support destiné à une del
EP2919286A4 (fr) * 2012-11-06 2016-05-11 Ngk Insulators Ltd Substrat pour diodes électroluminescentes
TWI552193B (zh) * 2013-08-22 2016-10-01 諾斯拉普葛蘭門系統公司 選擇性沈積鑽石於散熱導孔中的技術
JP2018113479A (ja) * 2018-04-04 2018-07-19 ローム株式会社 発光素子モジュール
JP2019040956A (ja) * 2017-08-23 2019-03-14 スタンレー電気株式会社 半導体発光装置
EP2228844B1 (fr) * 2009-03-10 2019-06-05 LG Innotek Co., Ltd. Appareil électroluminescent, son procédé de fabrication, et système d'éclairage avec l'appareil électroluminescent

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000035156A (ko) * 1998-11-05 2000-06-26 디. 크레이그 노룬드 다이용 패키지
KR20020089785A (ko) * 2001-05-24 2002-11-30 삼성전기주식회사 발광다이오드 및 이를 이용한 발광장치와 그 제조방법
US6614103B1 (en) * 2000-09-01 2003-09-02 General Electric Company Plastic packaging of LED arrays

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000035156A (ko) * 1998-11-05 2000-06-26 디. 크레이그 노룬드 다이용 패키지
US6614103B1 (en) * 2000-09-01 2003-09-02 General Electric Company Plastic packaging of LED arrays
KR20020089785A (ko) * 2001-05-24 2002-11-30 삼성전기주식회사 발광다이오드 및 이를 이용한 발광장치와 그 제조방법

Cited By (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008154952A1 (fr) * 2007-06-18 2008-12-24 Osram Gesellschaft mit beschränkter Haftung Composant électronique et procédé de fabrication d'un composant électronique
WO2009075530A2 (fr) * 2007-12-13 2009-06-18 Amoleds Co., Ltd. Semi-conducteur et son procédé de fabrication
WO2009075530A3 (fr) * 2007-12-13 2009-09-17 Amoleds Co., Ltd. Semi-conducteur et son procédé de fabrication
DE102008016534A1 (de) * 2008-03-31 2009-10-01 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterbauelements
US8410672B2 (en) 2008-04-17 2013-04-02 Koinklijke Philips Electronics N.V. Thermally conductive mounting element for attachment of printed circuit board to heat sink
EP2228844B1 (fr) * 2009-03-10 2019-06-05 LG Innotek Co., Ltd. Appareil électroluminescent, son procédé de fabrication, et système d'éclairage avec l'appareil électroluminescent
US8089086B2 (en) 2009-10-19 2012-01-03 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Light source
US8237188B2 (en) 2009-10-19 2012-08-07 Avego Technologies ECBU IP (Singapore) Pte. Ltd. Light source
EP2523230A3 (fr) * 2011-05-13 2015-12-02 LG Innotek Co., Ltd. Paquet de dispositif électroluminescent et lampe à rayonnement ultraviolet le possédant
US10811583B2 (en) 2011-05-13 2020-10-20 Lg Innotek Co., Ltd. Light emitting device package and ultraviolet lamp having the same
US10270021B2 (en) 2011-05-13 2019-04-23 Lg Innotek Co., Ltd. Light emitting device package and ultraviolet lamp having the same
WO2013174583A1 (fr) * 2012-05-24 2013-11-28 Epcos Ag Dispositif à diode électroluminescente
JP2015517740A (ja) * 2012-05-24 2015-06-22 エプコス アクチエンゲゼルシャフトＥｐｃｏｓ Ａｇ 発光ダイオード装置
US9449958B2 (en) 2012-05-24 2016-09-20 Epcos Ag Light-emitting diode device
EP2667424A1 (fr) * 2012-05-25 2013-11-27 Kabushiki Kaisha Toshiba Dispositif électroluminescent semi-conducteur
US9496471B2 (en) 2012-05-25 2016-11-15 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US9136439B2 (en) 2012-05-25 2015-09-15 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US9337408B2 (en) 2012-08-31 2016-05-10 Epcos Ag Light-emitting diode device
DE102012108107A1 (de) * 2012-08-31 2014-03-27 Epcos Ag Leuchtdiodenvorrichtung
CN102840488A (zh) * 2012-09-11 2012-12-26 广东宏泰照明科技有限公司 具有散热功能的led灯
JP2014067777A (ja) * 2012-09-25 2014-04-17 Stanley Electric Co Ltd 半導体発光素子
US9402300B2 (en) 2012-11-06 2016-07-26 Ngk Insulators, Ltd. Substrate for light-emitting diode
EP2919286A4 (fr) * 2012-11-06 2016-05-11 Ngk Insulators Ltd Substrat pour diodes électroluminescentes
TWI552193B (zh) * 2013-08-22 2016-10-01 諾斯拉普葛蘭門系統公司 選擇性沈積鑽石於散熱導孔中的技術
US9978912B2 (en) 2014-08-08 2018-05-22 Epcos Ag Carrier for an LED
WO2016020537A1 (fr) * 2014-08-08 2016-02-11 Epcos Ag Support destiné à une del
JP2019040956A (ja) * 2017-08-23 2019-03-14 スタンレー電気株式会社 半導体発光装置
JP7048228B2 (ja) 2017-08-23 2022-04-05 スタンレー電気株式会社 半導体発光装置
JP2018113479A (ja) * 2018-04-04 2018-07-19 ローム株式会社 発光素子モジュール

Similar Documents

Publication Publication Date Title
WO2007058438A1 (fr) Boitier de composants electroniques
TWI607585B (zh) 基於副載具的光發射器元件和方法
CN108352436B (zh) 固态发光器件和方法
EP2304817B1 (fr) Boîtier émetteur de lumière blanche comprenant un réseau de DEL
US7670872B2 (en) Method of manufacturing ceramic LED packages
KR101360732B1 (ko) 발광 다이오드 패키지
US9780268B2 (en) Submount based surface mount device (SMD) light emitter components and methods
US20140209939A1 (en) Ceramic led package
KR100658536B1 (ko) 어레이형 반도체 패키지
US20100025722A1 (en) Light emitting device, its manufacturing method and its mounted substrate
US20050139846A1 (en) High power light emitting diode package and fabrication method thereof
US20060012299A1 (en) Light emitting device
EP2139051A1 (fr) Boîtier de diode électroluminescente pour montage en surface
US20060091416A1 (en) High power LED package with universal bonding pads and interconnect arrangement
KR100788931B1 (ko) 전자부품 패키지
WO2012109225A1 (fr) Composants et procédés pour l'éclairage à l'aide de diodes électroluminescentes (del)
KR20110103307A (ko) 발광 장치
EP2291860A1 (fr) Composant d éclairage à semiconducteurs
CN110611025A (zh) 光发射器封装件
EP1890342A1 (fr) Substrat pour le montage de dispositifs emetteurs de lumiere et module de dispositif emetteur de lumiere
EP2023407A1 (fr) Substrat de montage de dispositif luminescent et procede pour le produire, module de dispositif luminescent et procede pour le fabriquer, affichage, dispositif d'eclairage, et systeme de signalisation pour la circulation
WO2008059650A1 (fr) Dispositif électroluminescent, son procédé de fabrication et son substrat monté
WO2014120256A1 (fr) Composants d'émetteur de lumière de dispositif à montage en surface (smd) à base d'embase et procédés
US10797204B2 (en) Submount based light emitter components and methods
CN107980182B (zh) 发光装置及其制造方法

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200680042763.6

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application
NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 06812254

Country of ref document: EP

Kind code of ref document: A1