WO2004102685A1 - Dispositif electroluminescent, structure de boitier de ce dispositif et procede de fabrication correspondant - Google Patents

Dispositif electroluminescent, structure de boitier de ce dispositif et procede de fabrication correspondant Download PDF

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Publication number
WO2004102685A1
WO2004102685A1 PCT/KR2004/001132 KR2004001132W WO2004102685A1 WO 2004102685 A1 WO2004102685 A1 WO 2004102685A1 KR 2004001132 W KR2004001132 W KR 2004001132W WO 2004102685 A1 WO2004102685 A1 WO 2004102685A1
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WO
WIPO (PCT)
Prior art keywords
light emitting
main substrate
emitting device
chip
circuit board
Prior art date
Application number
PCT/KR2004/001132
Other languages
English (en)
Inventor
Byoung Jae Park
Original Assignee
Nano Packaging Technology, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020030030478A external-priority patent/KR100566140B1/ko
Priority claimed from KR1020040012008A external-priority patent/KR100613489B1/ko
Application filed by Nano Packaging Technology, Inc. filed Critical Nano Packaging Technology, Inc.
Publication of WO2004102685A1 publication Critical patent/WO2004102685A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01025—Manganese [Mn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape

Definitions

  • the present invention relates to a light emitting device, a package structure thereof and a method of manufacturing the same, and more particularly, to a light emitting device having a heat dissipating structure suitable for high power output, a package structure thereof and a method of manufacturing the same.
  • LEDs light emitting diodes
  • phosphors phosphors
  • ContiniDUS research into high-output LEDs suitable for illuminating purposes is under way. Lifetime and performance characteristics of an LED as a semiconductor device deteriorate at a temperature higher than a rated operation temperature.
  • the LED in order to increase power output of the LED, it is necessary for the LED to have a dissipation structure capable of operating at as low a temperature as possible by effectively dissipating heat produced therefrom.
  • a plastic molding package is used to encapsulate a LED chip mounted on a lead frame.
  • heat is generally dissipated through the lead frame, so that heat dissipating efficiency of the LED is too low to attain high power device.
  • plastic used as the molding package material easily degrades by an ultraviolet ray emitted from the ultraviolet LED chip, resulting in deterioration in durability of the LED.
  • flip type LED chips have been developed. Accordingly, there exists a need for LED structures compatible with flip type LED chips while having a large-area heat dissipating plate. Disclosure of Invention
  • a light emitting device package structure comprising a main substrate for heat dissipation, including a reflecting mirror having an inner space whose an upper part is open and which is formed by a side wall protruding upward a predetermined height between an edge and a middle portion of the main substrate and is made of a metal material, the middle portion being where a light emitting device chip is to be mounted, an auxiliary circuit board which is interposed between the edge and the side wall of the main substrate, the auxiliary circuit board having a bottom surface partially being exposed to the main substrate, and which has at least one conductive pad formed on the exposed bottom surface and a chip bonding pad electrically connected to the conductive pad formed on a surface exposed upward, and a lead frame which is adhered to the conductive pad.
  • the auxiliary circuit board comprises a base layer which is formed on the main substrate and has a first insertion hole capable of being coupled to the outside of the side wall, and an upper layer which has a second insertion hole larger than the first insertion hole to expose a part of an upper surface of the base layer and is formed on the base layer, wherein the chip bonding pad is formed on the exposed upper surface of the base layer.
  • a light emitting device package structure comprising a main substrate for heat dissipation, which has a chip mounting part protruding a predetermined height upward in a middle portion thereof and is made of a metal material, an auxiliary circuit board which has an insertion hole capable of passing through the chip mounting part to be mounted around the chip mounting part of the main substrate, a bottom surface partially exposed to the main substrate, the exposed bottom surface having at least one conductive pad formed thereon, and a chip bonding pad electrically connected to the conductive pad formed on an upper surface thereof, a reflecting mirror which is formed on the auxiliary circuit board to focus a beam diffused from a light emitting device chip to be mounted on the chip mounting part to the periphery, and a lead frame which is adhered to the conductive pad.
  • a light emitting device comprising a main substrate for heat dissipation, including a reflecting mirror having an inner space whose an upper part is open and which is formed by a side wall protruding upward a predetermined height between an edge and a middle portion of the main substrate and is made of a metal material, at least one light emitting device chip which is mounted on the middle portion of the main substrate, an auxiliary circuit board which has an insertion hole capable of passing through the chip mounting part to be mounted around the chip mounting part of the main substrate, a bottom surface partially exposed to the main substrate, the exposed bottom surface having at least one conductive pad formed thereon, and a chip bonding pad electrically connected to the conductive pad formed on an upper surface thereof, a lead frame which is adhered to the conductive pad, and a lens which is adhered to the auxiliary circuit board.
  • three LED chips which emit red, green and blue emissions, respectively, are mounted in an inner space of the main substrate, and at least four chip bonding pads and at least four lead frames are formed for a common electrode and driving electrodes, respectively.
  • the light emitting device chip may be an ultraviolet LED chip emitting ultraviolet ray
  • the lens may have a non-reflecting coating layer formed on a surface thereof.
  • a light emitting device comprising a main substrate for heat dissipation, including a chip mounting part protruding a predetermined height upward in a middle portion thereof and made of a metal material, at least one light emitting device chip which is mounted on the chip mounting part, an auxiliary circuit board which has an insertion hole capable of passing through the chip mounting part to be mounted around the chip mounting part of the main substrate, a bottom surface partially exposed to the main substrate, the exposed bottom surface having at least one conductive pad formed thereon, and a chip bonding pad electrically connected to the conductive pad formed on an upper surface thereof, a reflecting mirror which is formed on the auxiliary circuit board to focus a beam diffused from the light emitting device chip mounted on the chip mounting part to the periphery, a lead frame which is adhered to the conductive pad, and a cap which is coupled with the reflecting mirror to encapsulate an inner space between the reflecting mirror and the light emitting device chip.
  • the cap is a lens for focusing light emitted from the light emitting device chip.
  • the light emitting device chip is a flip type light emitting device chip having an electrode formed on a bottom surface opposite to the light emitting surface, and the electrode of the flip type light emitting device chip is electrically connected to the chip bonding pad by soldering.
  • a method of manufacturing an LED package comprising (a) forming a main substrate for heat dissipation, including a reflecting mirror having an inner space whose an upper part is open and which is formed by a side wall protruding a predetermined height upward between an edge and a middle portion, in which a light emitting device chip is mounted, of the main substrate, (b) forming an auxiliary circuit board in which a part of a bottom surface thereof is exposed to the main substrate , at least one conductive pad is formed on the exposed bottom surface, and a chip bonding pad electrically connected to the conductive pad is formed on an upward exposed surface so that the auxiliary circuit board is mounted between the edge and the side wall of the main substrate, (c) adhering the auxiliary circuit board to the main substrate, (d) adhering a lead frame to the conductive pad formed on the bottom surface of the auxiliary circuit board, and (e) plating a region of an object to be plated of an assembly formed after
  • step (e) comprises (e-1) plating the chip bonding pad and the lead frame and an exposed portion of the main substrate with N, (e-2) plating the chip bonding pad and the lead frame with Au, and (e-3) plating an inside of a reflecting mirror of the main substrate with at least one reflective material selected from the group consisting of Ag, Al and glossy N.
  • a method of manufacturing a light emitting device package comprising (1) forming a main substrate for heat dissipation, which has a chip mounting part protruding a predetermined height in a middle portion thereof so as to be higher than at an edge thereof and is made of a metal material, (2) forming an auxiliary circuit board which has an insertion hole capable of passing through the chip mounting part, a conductive pad which is formed to expose a part of a bottom surface of the auxiliary circuit board to the main substrate , and a chip bonding pad which is electrically connected to the conductive pad on an upper surface of the auxiliary circuit board, (3) adhering the auxiliary circuit board to the periphery of the chip mounting part of the main substrate through the insertion hole, (4) adhering a lead frame to the conductive pad formed on the bottom surface of the auxiliary circuit board, and (5) adhering a reflecting mirror, which is formed to focus a beam diffused from a light emitting device chip to be mounted on the
  • FIG. 1 is a perspective view showing an LED having a package structure according to a first embodiment of the present invention
  • FIG. 2 is a cross-sectional view of FIG. 1;
  • FIG. 3 shows light exit paths of the LED shown in FIG. 2;
  • FIG. 4 is a partially extracted perspective view of some parts for explaining a process of manufacturing a package structure shown in FIG. 1;
  • FIG. 5 is a rear view of an auxiliary circuit board shown in FIG. 4;
  • FIG. 6 is a cross-sectional view showing adherence between the auxiliary circuit board and a main substrate for heat dissipation, shown in FIG. 4;
  • FIG. 7 is a perspective view showing an LED having a package structure according to a second embodiment of the present invention;
  • FIG. 8 is a rear view of an auxiliary circuit board shown in FIG. 7;
  • FIG. 9 is a rear view of the LED shown in FIG. 7;
  • FIG. 10 is a cross-sectional view showing an LED having a package structure according to a third embodiment of the present invention.
  • FIG. 11 is a perspective view showing an LED having a package structure according to a fourth embodiment of the present invention;
  • FIG. 12 is a cross-sectional view shown in FIG. 11;
  • FIG. 13 is a cross-sectional view showing a state in which a flip type LED chip is mounted to the package structure shown in FIG. 11 ;
  • FIG. 14 is a partially extracted perspective view of some parts for explaining a process of manufacturing a package structure shown in FIG. 11;
  • FIG. 15 is a rear view of an auxiliary circuit board shown in FIG. 14;
  • FIG. 16 is a cross-sectional view explaining adherence between each of the auxiliary circuit board, a main substrate for heat dissipation and a reflecting mirror shown in FIG. 14;
  • FIG. 17 is a perspective view showing an LED having a package structure according to a fifth embodiment of the present invention.
  • FIG. 18 is a cross-sectional view showing an LED having a package structure according to a sixth embodiment of the present invention
  • FIG. 1 is a perspective view showing an LED having a package structure according to a first embodiment of the present invention.
  • an LED 100 includes an LED chip 110, a lens 120 and a package structure 200.
  • the package structure 200 includes a main substrate 210 for heat dissipation, an auxiliary circuit board 230 and a lead frame 250.
  • the main substrate 210 has a side wall 211 having a predetermined height concentrically formed between its edge and middle portion. Further, the inside of the side wall 211 tapers downward, that is, a radius of curvature of the inside of the side wall 211 is smaller at a lower part than at an upper part, producing a reflecting mirror structure capable of focusing light emitted from the LED chip 110.
  • the main substrate 210 is shaped crosswise so as to expose edge portions of the auxiliary circuit board 230 mounted thereon.
  • the main substrate 210 is made of a metal material having good thermal conductivity.
  • Examples of the material useful as the main substrate 210 include copper and a copper alloy exemplified by brass, W-Cu alloy and Mo-Cu alloy.
  • the main substrate 210 is formed by forming a metal plate having a structure shown in FIG. 4 using the above-described material, primarily plating nickel on the entire surface of the metal plate, and secondly plating a highly reflective material on a surface of an inner space 213 defined by the side wall 211.
  • At least one reflective material selected from the group consisting of silver, aluminum and glossy nickel is used as a material plated on the surface of the inner space 213.
  • the glossy nickel is prepared by adding a glossy material to nickel.
  • the glossy material include saccharin, formalin and materials prepared by adding nickel sulfate, nickel chloride and boron thereto.
  • At least one LED chip 110 is mounted on a chip mounting part 214 which is flattened in the inner space 213 of the main substrate 210.
  • the LED chip 110 can be mounted on the chip mounting part 214 through a sub-mount (not shown), unlike in the illustrative example.
  • the auxiliary circuit board 230 is coupled to an upper surface of the main substrate
  • the auxiliary circuit board 230 is formed to electrically connect the LED chip 110 with the lead frame 250 which is to be electrically connected to external circuitry.
  • a chip bonding pad 238 is installed on the mounting surface 234 of the auxiliary circuit board 230.
  • the chip bonding pad 238 is connected to the LED chip 110 via wires made of Au.
  • the chip bonding pad 238 is electrically connected to a conductive pad which is exposed to a bottom surface of the auxiliary circuit board 230 to which the lead frame 250 is coupled, by a conductive pattern.
  • the auxiliary circuit board 230 is formed such that the chip bonding pad 238 is electrically connected to the conductive pad using at least one ceramic sheet containing A12O3 as a main constituent.
  • auxiliary circuit board 230 A preferable embodiment of the auxiliary circuit board 230 is described in reference to FIGS. 4 to 6.
  • the auxiliary circuit board 230 has a structure in which a first ceramic layer 231, a second ceramic layer 233 and a third ceramic layer 235 are laminated sequentially.
  • a conductive pad 237 for coupling with the lead frame 250 is formed in an edge of a bottom surface of the first ceramic layer 231. It is preferable that the conductive pad 237 is formed by primarily forming W or Mo-Mn alloy on the bottom surface of the first ceramic layer 231, and secondly plating N on the resultant surface.
  • the chip bonding pad 238 is formed on an upper surface of the second ceramic layer 233. It is preferable that the chip bonding pad 238 is formed by primarily plating W or Mo-Mn alloy on the upper surface of the second ceramic layer 233, secondly plating N thereon, and finally plating Au or Ag thereon
  • a conductive pattern is formed to electrically connect the conductive pad 237 with the chip bonding pad 238 in the first ceramic layer 231 and the second ceramic layer 233.
  • the first ceramic layer 231 and the second ceramic layer 233 correspond to a base layer and the third ceramic layer 235 corresponds to an upper layer, respectively.
  • the conductive pattern includes a first conductive pattern 241a, a second conductive pattern 241b and a third conductive pattern 241c.
  • the first conductive pattern 241a passes through the second ceramic layer 233 at a position at which it is connected with the chip bonding pad 238.
  • the second conductive pattern 241b is formed on an upper surface of the first ceramic layer 231 and connected with the first conductive pattern 241a.
  • the third conductive pattern 241c passes through the first ceramic layer 231 to connect the second conductive pattern 241b with the conductive pad 237.
  • the first and third conductive patterns 241a and 241c are formed by forming holes on the second and first ceramic layers 233 and 231, respectively and then filling the holes with a conductive material.
  • the conductive pattern 241a, 241b, 241c is formed of W or Mo-
  • a second insertion hole 239a which is formed in the middle of the third ceramic layer 235 is larger than a first insertion holes 239b which are formed in the middle of the second ceramic layer 233 and the first ceramic layer 231.
  • a region ranging from an edge of the second insertion hole 239a of the third ceramic layer 235 to an edge of the first insertion hole 239b of the second ceramic layer 233 becomes a mounting surface 234.
  • a portion defined by reference numeral 244 among hatched portions in FIG. 5 showing the bottom surface of the first ceramic layer 231 corresponds to an adhering auxiliary pad which is spaced apart from the conductive pad 237 to be easily adhered to the main substrate 210.
  • auxiliary pad 244 is formed by primarily forming W or Mo-
  • the chip bonding pad 238 is electrically connected to the conductive pad 237 by extending the second conductive pattern 241b to an edge of a side surface of the first ceramic layer 231 and forming a lateral conductive pattern (not shown) in the edge of the side surface for connecting the second conductive pattern 241b to the conductive pad 237.
  • the four chip bonding pads are formed to be connected to independently the corresponding conductive pads for driving each of the red, green and blue LED chips, respectively.
  • edge portions 249 which are rounded to be inward recessed at the respective corners of the auxiliary circuit board 230 facilitate a cutting work of the auxiliary circuit boards 230 and can be used to form the lateral conductive pattern as described above.
  • the lens 120 is constructed to be fittingly coupled between the mounting surface
  • auxiliary circuit board 230 A portion where the lens 120 is adhered to the auxiliary circuit board 230 is sealed by a sealing material for encapsulation of the inner space 130.
  • the curvature and shape of the lens 120 can be appropriately designed according to a divergent angle of light to be employed, other than those shown above.
  • Transparent synthetic resins or glass, and so on, can be used as a material of the lens 120.
  • the inner space 130 formed between the lens 120 and the package structure 200 can be filled with a material having a refractive index similar to that of the lens 120 to be used.
  • the inner space 130 formed between the lens 120 and the package structure 200 can be filled with silicon. In this case, light emitted from the LED chip 110 is suppressed from being reflected at an inside surface of the lens 120, thereby increasing the utilization efficiency of light.
  • the lead frame 250 is coupled to the conductive pad 237 of the auxiliary circuit boards 230.
  • FIGS. 7 to 9 An LED having a package structure according to a second embodiment in which a surface mounted lead frame is used will now be described with reference to FIGS. 7 to 9, in which like reference numerals denote like functional elements as those shown above.
  • an LED 300 includes a main substrate 310 for heat dissipation, and a lead frame 350.
  • the main substrate 310 extends from both sides of an auxiliary circuit board 330 and coupled thereto.
  • a conductive pad 337 for mounting the surface mounted lead frame 350 is formed in an edge of a side of a lower surface of the auxiliary circuit board 330.
  • An auxiliary pad 344 for adhering to the main substrate 310 is spaced apart from the conductive pad 337.
  • the chip bonding pad 238 and the conductive pad 337 are connected by a conductive pattern which is formed according to a manner described above.
  • the main substrate 310 has a width capable of exposing the conductive pad 337 of the auxiliary circuit board 330 according to a direction perpendicular to an extending direction of the lead frame 350 and is longer than the auxiliary circuit board 330 by a certain length.
  • the length and width of the main substrate 310 are not limited to the shown structure and can be properly applied according to a required heat dissipating amount.
  • a hole 311 formed around both edges of the main substrate 310 is formed for coupling a screw and it is a matter of course that the hole 311 may be omitted according to a coupling manner.
  • FIG. 10 shows an LED 400 in which an ultraviolet LED chip 410 is used.
  • the LED 400 has a flat lens 320 adhered to the auxiliary circuit board 230.
  • the flat lens 320 has a base plate 321 made of a transparent material and non- reflecting coating layers 322 and 323 formed on an upper and lower surfaces of the base plate 321.
  • a method of forming and a material applied to the non-reflecting coating layers 322 and 323 are known variously. For example, it is disclosed in Korea Patent Published Application N>. 2001-0104377 (WO2000/65639) that the non- reflecting coating layer can be formed using SixOyNz which is an ultraviolet non- reflecting coating material.
  • non-reflecting coating layer can be applied to the surface of the curved lens 120 shown in FIG. 1.
  • auxiliary circuit boards 230 and 330, the main substrates 210 and 310 and the lead frames 250 and 350 are formed, respectively.
  • the auxiliary circuit boards 230 and 330 are formed to have the structure described above. That is, the auxiliary circuit board 230 shown in FIG. 4 is explained as one example. First, the insertion holes 239a and 239b and conductive holes corresponding to the first and third conductive patterns are formed on ceramic sheets corresponding to each of the first ceramic layer 231, the second ceramic layer 233 and the third ceramic layer 235. Next, the conductive holes formed on the first ceramic layer 231 and the second ceramic layer 233 are filled with a metal paste so that the first and third conductive patterns 241a and 241c are formed.
  • the second conductive patterns 241b, the chip bonding pad 238, the conductive pad 237 and the auxiliary pad 244 are printed using a metal paste made of the same material as the above metal paste.
  • W or Mo-Mn alloy can be used as the metal paste.
  • the first ceramic layer 231, the second ceramic layer 233 and the third ceramic layer 235 are sequentially laminated and then fired at a known firing temperature. It is preferable that the conductive pad 237 and the auxiliary pad 244 formed on the exposed surface of the auxiliary circuit board 230 are plated with nickel.
  • the main substrates 210 and 310 are manufactured into the above- described structure before molding or pressing a metal material to be used.
  • the main substrates 210 and 310 are formed by forming a metal plate made of copper having good thermal conductivity or a brass material into the shown structure and then plating nickel on the entire surface of the metal plate.
  • lead frames of known various types such as a lead pin type and a surface mounted type according to a mounting manner can be applied to the lead frames 250 and 350. It is preferable that the lead frames 250 and 350 are plated with nickel.
  • the main substrates 210 and 310, the auxiliary circuit boards 230 and 330 and the lead frames 250 and 350 may be adhered to each other simultaneously or in any arbitrary order.
  • the main substrates 210 and 310, the auxiliary circuit boards 230 and 330 and the lead frames 250 and 350 are mutually assembled in a state in which brazing sheets 280 and 281 are inserted between the auxiliary circuit board 230 and the main substrate 210 and between the conductive pad 237 of the auxiliary circuit board 230 and the lead frames 250 and 350, respectively, and then fused at a temperature higher than a melting point of the brazing sheets 280 and 281 so that they are adhered to each other.
  • the brazing sheets 280 and 281 can be made of Ag-Cu alloy or Au-Sn alloy.
  • the chip bonding pad 238 formed on the auxiliary circuit board 230, the lead frame 250 and the exposed portions of the main substrates 210 and 310 are plated with nickel.
  • the surfaces of the inner spaces 213 of the main substrates 210 and 310 are coated with at least one reflective material selected from the group consisting of Ag, Al and glossy N. [93] Otherwise, when the assembly is completed, after the above-described N plating, the chip bonding pad 238, the lead frames 250 and 350 and the surfaces of the inner spaces 213 of the main substrates 210 and 310 are plated with Ag.
  • the LED chip 110 to be used is mounted on the chip mounting part 214 of the main substrates 210 and 310 directly or through the sub-mount (not shown). Then, the LED chip 110 and the corresponding chip bonding pad 238 are bonded via wires 140. Next, the lens 120 is fixed to the auxiliary circuit boards 230 and 330. When a coupling portion between the lens 120 and the auxiliary circuit board 230 is sealed with a sealing material, for example, epoxy, the manufacture of the LEDs 100, 300 and 400 is completed.
  • a sealing material for example, epoxy
  • the LED has a chip bonding pad for a common electrode, chip bonding pads for driving electrodes of each of the LED chips and lead frames corresponding to the chip bonding pads.
  • a first lead frame 250a among the four lead frames 250 is used for the common electrode and second to fourth lead frames 25Cb, 250c and 250d are used for the driving electrodes of the red, green and blue LED chips in reference to FIG. 4.
  • the four chip bonding pads 238 are formed, and the lead frames 250a to 250d are independently connected to the corresponding chip bonding pads, respectively. It is a matter of course that the number of the lead frame 250 and the number of the chip bonding pad 238 may be four or more.
  • FIGS. 11 to 18 show an LED according to still another embodiment capable of mounting a flip type LED chip, in which like reference numerals denote like functional elements shown above.
  • FIG. 11 is a perspective view showing an LED having a package structure according to a fourth embodiment of the present invention, in which like reference numerals refer to like functional elements shown above.
  • an LED 500 includes an LED chip 110, a lens 120 and a package structure 600.
  • the package structure 600 includes a main substrate 610, an auxiliary circuit board
  • the main substrate 610 has a chip mounting part 611 for mounting the LED chip which protrudes a predetermined height upward in a middle portion of a base 612.
  • the chip mounting part 611 is shaped of a rectangle.
  • the chip mounting part 611 may take various forms, including a circle.
  • the main substrate 610 is plated with nickel using a material having good thermal conductivity explained in FIG. 1.
  • the auxiliary circuit board 630 is coupled to the exposed upper surface of the base
  • a chip bonding pad 238 is formed on an upper surface of the auxiliary circuit board
  • a conductive pad which is electrically connected to the chip bonding pad 238 by a conductive pattern is formed on a bottom surface of thereof.
  • the chip bonding pad 238 can be electrically coupled to an electrode of the flip type LED chip 111 by soldering.
  • a reference numeral 115 denotes solder for coupling the flip type LED chip 111 to the main substrate 610.
  • a thickness of the auxiliary circuit board 630 is determined to arrange the upper surface of the auxiliary circuit board 630 and an upper surface of the chip mounting part 611 in a row in a state in which the auxiliary circuit board 630 is adhered to the main substrate 610.
  • the auxiliary circuit board 630 is formed to internally and mutually connect the chip bonding pad 238 and the conductive pad to the known various circuit board, for example, a printed circuit board (PCB).
  • the auxiliary circuit board 630 is formed to internally and mutually connect the chip bonding pad 238 with the conductive pad using at least one ceramic sheet containing A12O3 as a principal component.
  • such auxiliary circuit board 630 has a structure in which a first ceramic layer 631 and a second ceramic layer 633 are laminated sequentially.
  • an adhering auxiliary pad 245 which is spaced apart from the chip bonding pad 238 in an area corresponding to a potential adherence portion of the reflecting mirror 670 is formed on an upper surface of the second ceramic layer 633.
  • the reflecting mirror 670 is formed to focus light emitted from the LED chips 110 and 111.
  • a hole is formed in the middle of the reflecting mirror 670.
  • the internal surface of the reflecting mirror 670 tapers downward such that an upper part thereof is smaller than a lower part thereof, thereby enabling light emitted from the LED chips 110 and 111 to be focused.
  • At least inside surface of the reflecting mirror 670 is formed of a highly reflective material.
  • the inside surface of the reflecting mirror 670 is formed of at least one selected from the group consisting of Ag, N and Al.
  • the reflecting mirror 670 is formed of any one among Ag, N and Al.
  • the reflecting mirror 670 is formed by primarily molding synthetic resin or a metal and then coating at least inside surface thereof with a highly reflective material.
  • a highly reflective material it is preferable that at least one reflective material selected from the group consisting of Ag, Al and glossy N is used as the coating highly reflective material.
  • the lens 120 is used as one example of a cap for encapsulating and protecting the
  • LED chips 110 and 111 and adhered to the reflecting mirror 670.
  • a portion where the lens 120 is adhered to the reflecting mirror 670 is sealed by a sealing material to encapsulate the inner space of the reflecting mirror 670.
  • the inner space of the reflecting mirror 670 is molded with a transparent material such as silicon or epoxy instead of the lens 120 so that the cap can be formed.
  • FIG. 17 shows an LED having a package structure according to a further embodiment in which a surface mounted lead frame is used.
  • an LED 700 includes a main substrate 710 which is extended from and coupled to both sides of an auxiliary circuit board 730 and a lead fram750.
  • a chip mounting part 611 protrudes on a base 712 in the main substrate 710.
  • a conductive pad and an auxiliary pad are formed on a bottom surface of the auxiliary circuit board 730.
  • a structure other than the conductive pad and the auxiliary pad is the same as that shown in FIG. 14.
  • FIG. 18 shows an LED 800 having ultraviolet LED chips.
  • the LED 800 includes a flat lens 320 which is adhered to a reflecting mirror 670.
  • the reflecting mirror 670 is formed of Al having high reflectivity in an ultraviolet area. [126] Hereinafter, a process of manufacturing the LED having the structure explained through FIGS. 11 to 18 is explained.
  • the auxiliary circuit boards 630 and 730, the main substrates 610 and 710, the reflecting mirror 670 and the lead frames 250 and 350 are formed, respectively.
  • the auxiliary circuit boards 630 and 730 are formed to have the structure described above.
  • the reflecting mirror 670 is formed of a highly reflective material, for example, Al, or by forming a mold made of a metal other than Al or synthetic resin and then coating a surface thereof with a highly reflective material.
  • the reflecting mirror 670 is formed by forming the mold made of a metal or synthetic resin and then coating the surface thereof with a highly reflective material, after plating N on the surface of the mold, an adhering process which will be described below is performed.
  • the above-described adhering methods are optionally used.
  • the reflecting mirror 670 is formed by sequentially plating N and Ag, they are adhered to each other using the brazing sheets 280, 281 and 283 as shown in FIGS. 14 and 16 or soldering paste.
  • the chip bonding pad 238, the lead frame 250, the main substrate 210 and the reflecting mirror 670 are plated with Ag.
  • 670 can be coated with at least one reflective material selected from the group consisting of Al and glossy N.
  • the reflecting mirror 670 is formed of Al
  • the main substrates 610 and 710, the auxiliary circuit boards 630 and 730 and the lead frames 250 and 350 are adhered to each other by a soldering bonding agent, the adhered assembly is sequentially plated with N and Ag, and the reflecting mirror 670 can be adhered to the auxiliary circuit board 630 using a coupling agent such as epoxy.
  • the LED chip 110 to be used is mounted on the chip mounting part 611 directly or through the sub-mount (not shown). Then, the LED chip 110 is bonded to the corresponding chip bonding pad 238 by the wires 140.
  • the lens 120 is fixed to the reflecting mirror 670.
  • a coupling portion between the lens 120 and the reflecting mirror 670 is sealed with a sealing material, for example, epoxy, the manufacture of the LEDs 500, 700 and 800 is completed.
  • light emitting devices can also be configured to have a chip bonding pad for a common electrode so as to mount three LED chips (not shown) for red, green and blue emissions, respectively, chip bonding pads for independent driving electrodes for the respective LED chips, and lead frames corresponding thereto.
  • a LED chip is mounted on a large-sized, metallic main substrate and is capable of focusing light, thereby increasing the light emitting efficiency and heat dissipating capability.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

Cette invention concerne un dispositif électroluminescent, une structure de boîtier de ce dispositif électroluminescent ainsi qu'un procédé de fabrication correspondant. Cette invention permet d'accroître l'efficacité de l'émission de la lumière ainsi que la capacité de dissipation thermique grâce au montage d'une puce LED sur un substrat principal de dissipation thermique constitué de métal et présentant une grande surface. La structure de boîtier du dispositif électroluminescent comprend : un substrat principal de dissipation thermique comprenant un miroir réflecteur comportant un espace interne dont une partie supérieure est ouverte et qui est formé d'une paroi interne qui dépasse d'une hauteur prédéterminée vers le haut entre un bord et une partie intermédiaire du substrat principal, la partie intermédiaire étant la partie où la puce à dispositif électroluminescent doit être montée ; une carte de circuits imprimés auxiliaire qui est intercalée entre le bord et la paroi latérale du substrat principal, la carte de circuits imprimés comportant une surface inférieure exposée partiellement au substrat principal, et qui comprend au moins une pastille conductrice formée sur la surface inférieure exposée et une pastille de connexion de la puce qui est connectée électriquement à la pastille conductrice formée sur une surface exposée vers le haut ; ainsi qu'une grille de connexion qui est collée sur la pastille conductrice.
PCT/KR2004/001132 2003-05-14 2004-05-13 Dispositif electroluminescent, structure de boitier de ce dispositif et procede de fabrication correspondant WO2004102685A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2003-0030478 2003-05-14
KR1020030030478A KR100566140B1 (ko) 2003-05-14 2003-05-14 발광다이오드와 그 패키지 구조체 및 제조방법
KR1020040012008A KR100613489B1 (ko) 2004-02-23 2004-02-23 발광소자와 그 패키지 구조체 및 제조방법
KR10-2004-0012008 2004-02-23

Publications (1)

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WO2004102685A1 true WO2004102685A1 (fr) 2004-11-25

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Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006089523A1 (fr) * 2005-02-28 2006-08-31 Osram Opto Semiconductors Gmbh Dispositif d'éclairage
WO2006104325A1 (fr) * 2005-04-01 2006-10-05 Sailux, Inc. Structure de diode electroluminescente
WO2007051323A1 (fr) * 2005-09-23 2007-05-10 Lucea Ag Bijou
CN100352072C (zh) * 2005-03-02 2007-11-28 友达光电股份有限公司 发光二极管光源组件
CN100407460C (zh) * 2005-11-16 2008-07-30 齐瀚光电股份有限公司 发光二极管灯组
CN100454595C (zh) * 2005-12-09 2009-01-21 富准精密工业(深圳)有限公司 发光二极管模组
WO2009096619A1 (fr) * 2008-02-01 2009-08-06 Ytel Photonics Inc. Boîtier de dispositif optique et son procédé de fabrication
DE102008016534A1 (de) * 2008-03-31 2009-10-01 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterbauelements
US7737463B2 (en) * 2004-09-10 2010-06-15 Seoul Semiconductor Co., Ltd. Light emitting diode package with a heat sink support ring and having multiple molding resins, wherein secondary molding resin with higher hardness than primary molding resin and which covers primary molding resin that covers LED die
US7748873B2 (en) 2004-10-07 2010-07-06 Seoul Semiconductor Co., Ltd. Side illumination lens and luminescent device using the same
US7855391B2 (en) 2006-02-02 2010-12-21 Lg Electronics Inc. Lead frame and light emitting device package using the same
US20110260200A1 (en) * 2010-04-23 2011-10-27 Yi-Chang Chen Method of fabricating non-metal led substrate and non-metal led substrate and method of fabricating led device using the non-metal led substrate and led device with the non-metal led substrate
CN101714597B (zh) * 2006-04-05 2011-11-16 三星Led株式会社 用于制造发光二极管封装的方法
CN102255030A (zh) * 2010-12-24 2011-11-23 友达光电股份有限公司 发光模块
US8188492B2 (en) 2006-08-29 2012-05-29 Seoul Semiconductor Co., Ltd. Light emitting device having plural light emitting diodes and at least one phosphor for emitting different wavelengths of light
JP2015057826A (ja) * 2013-09-16 2015-03-26 エルジー イノテック カンパニー リミテッド 発光素子パッケージ
US10847946B2 (en) 2018-12-17 2020-11-24 Samsung Electronics Co., Ltd. Light source package

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KR19990002703U (ko) * 1997-06-28 1999-01-25 이택렬 발광다이오드(light emitting diode)
JP2000150967A (ja) * 1998-11-05 2000-05-30 Agilent Technol Inc 表面実装可能なｌｅｄパッケ―ジ
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JPH10215001A (ja) * 1997-01-31 1998-08-11 Nichia Chem Ind Ltd 発光装置
KR19990002703U (ko) * 1997-06-28 1999-01-25 이택렬 발광다이오드(light emitting diode)
JP2000150967A (ja) * 1998-11-05 2000-05-30 Agilent Technol Inc 表面実装可能なｌｅｄパッケ―ジ
JP2003124524A (ja) * 2001-10-09 2003-04-25 Lumileds Lighting Us Llc 高束のｌｅｄアレイ
KR20030053853A (ko) * 2001-12-24 2003-07-02 삼성전기주식회사 발광다이오드 패키지

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7737463B2 (en) * 2004-09-10 2010-06-15 Seoul Semiconductor Co., Ltd. Light emitting diode package with a heat sink support ring and having multiple molding resins, wherein secondary molding resin with higher hardness than primary molding resin and which covers primary molding resin that covers LED die
US7855395B2 (en) * 2004-09-10 2010-12-21 Seoul Semiconductor Co., Ltd. Light emitting diode package having multiple molding resins on a light emitting diode die
US7901113B2 (en) 2004-10-07 2011-03-08 Seoul Semiconductor Co., Ltd. Side illumination lens and luminescent device using the same
US7748873B2 (en) 2004-10-07 2010-07-06 Seoul Semiconductor Co., Ltd. Side illumination lens and luminescent device using the same
US8525206B2 (en) 2005-02-28 2013-09-03 Osram Opto Semiconductor Gmbh Illumination device
EP2270888A3 (fr) * 2005-02-28 2013-12-25 OSRAM Opto Semiconductors GmbH Dispositif d'éclairage
WO2006089523A1 (fr) * 2005-02-28 2006-08-31 Osram Opto Semiconductors Gmbh Dispositif d'éclairage
US7880188B2 (en) 2005-02-28 2011-02-01 Osram Opto Semiconductors Gmbh Illumination device
CN100352072C (zh) * 2005-03-02 2007-11-28 友达光电股份有限公司 发光二极管光源组件
WO2006104325A1 (fr) * 2005-04-01 2006-10-05 Sailux, Inc. Structure de diode electroluminescente
WO2007051323A1 (fr) * 2005-09-23 2007-05-10 Lucea Ag Bijou
CN100407460C (zh) * 2005-11-16 2008-07-30 齐瀚光电股份有限公司 发光二极管灯组
CN100454595C (zh) * 2005-12-09 2009-01-21 富准精密工业(深圳)有限公司 发光二极管模组
US7855391B2 (en) 2006-02-02 2010-12-21 Lg Electronics Inc. Lead frame and light emitting device package using the same
CN101714597B (zh) * 2006-04-05 2011-11-16 三星Led株式会社 用于制造发光二极管封装的方法
US8188492B2 (en) 2006-08-29 2012-05-29 Seoul Semiconductor Co., Ltd. Light emitting device having plural light emitting diodes and at least one phosphor for emitting different wavelengths of light
US8674380B2 (en) 2006-08-29 2014-03-18 Seoul Semiconductor Co., Ltd. Light emitting device having plural light emitting diodes and plural phosphors for emitting different wavelengths of light
WO2009096619A1 (fr) * 2008-02-01 2009-08-06 Ytel Photonics Inc. Boîtier de dispositif optique et son procédé de fabrication
DE102008016534A1 (de) * 2008-03-31 2009-10-01 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterbauelements
US20110260200A1 (en) * 2010-04-23 2011-10-27 Yi-Chang Chen Method of fabricating non-metal led substrate and non-metal led substrate and method of fabricating led device using the non-metal led substrate and led device with the non-metal led substrate
CN102255030A (zh) * 2010-12-24 2011-11-23 友达光电股份有限公司 发光模块
CN102255030B (zh) * 2010-12-24 2013-10-16 友达光电股份有限公司 发光模块
JP2015057826A (ja) * 2013-09-16 2015-03-26 エルジー イノテック カンパニー リミテッド 発光素子パッケージ
US10847946B2 (en) 2018-12-17 2020-11-24 Samsung Electronics Co., Ltd. Light source package

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