EP1556394A4 - ASYMMETRIC GROUP 8 (VIII) METALOCO COMPOUNDS - Google Patents
ASYMMETRIC GROUP 8 (VIII) METALOCO COMPOUNDSInfo
- Publication number
- EP1556394A4 EP1556394A4 EP03810819A EP03810819A EP1556394A4 EP 1556394 A4 EP1556394 A4 EP 1556394A4 EP 03810819 A EP03810819 A EP 03810819A EP 03810819 A EP03810819 A EP 03810819A EP 1556394 A4 EP1556394 A4 EP 1556394A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- viii
- metallocene compounds
- asymmetric group
- asymmetric
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 150000001875 compounds Chemical class 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/406—Oxides of iron group metals
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F17/00—Metallocenes
- C07F17/02—Metallocenes of metals of Groups 8, 9 or 10 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (23)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US42294602P | 2002-10-31 | 2002-10-31 | |
US42294702P | 2002-10-31 | 2002-10-31 | |
US422946P | 2002-10-31 | ||
US422947P | 2002-10-31 | ||
US42628402P | 2002-11-14 | 2002-11-14 | |
US426284P | 2002-11-14 | ||
US42746102P | 2002-11-18 | 2002-11-18 | |
US427461P | 2002-11-18 | ||
US44632003P | 2003-02-07 | 2003-02-07 | |
US446320P | 2003-02-07 | ||
US45371803P | 2003-04-18 | 2003-04-18 | |
US45371903P | 2003-04-18 | 2003-04-18 | |
US45371703P | 2003-04-18 | 2003-04-18 | |
US453719P | 2003-04-18 | ||
US453718P | 2003-04-18 | ||
US453717P | 2003-04-18 | ||
US10/686,254 US6919468B2 (en) | 2002-10-31 | 2003-10-16 | Asymmetric group 8 (VIII) metallocene compounds |
US685777 | 2003-10-16 | ||
US10/685,785 US7927658B2 (en) | 2002-10-31 | 2003-10-16 | Deposition processes using group 8 (VIII) metallocene precursors |
US686254 | 2003-10-16 | ||
US685785 | 2003-10-16 | ||
US10/685,777 US6884901B2 (en) | 2002-10-31 | 2003-10-16 | Methods for making metallocene compounds |
PCT/US2003/034497 WO2004041832A2 (en) | 2002-10-31 | 2003-10-30 | Asymmetric group 8 (viii) metallocene compounds |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1556394A2 EP1556394A2 (en) | 2005-07-27 |
EP1556394A4 true EP1556394A4 (en) | 2008-02-20 |
Family
ID=32315054
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP03810818A Expired - Lifetime EP1556527B1 (en) | 2002-10-31 | 2003-10-30 | Deposition processes using group 8 (viii) metallocene precursors |
EP03810819A Withdrawn EP1556394A4 (en) | 2002-10-31 | 2003-10-30 | ASYMMETRIC GROUP 8 (VIII) METALOCO COMPOUNDS |
EP03810820.5A Expired - Lifetime EP1556395B1 (en) | 2002-10-31 | 2003-10-30 | Methods for making metallocene compounds |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP03810818A Expired - Lifetime EP1556527B1 (en) | 2002-10-31 | 2003-10-30 | Deposition processes using group 8 (viii) metallocene precursors |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP03810820.5A Expired - Lifetime EP1556395B1 (en) | 2002-10-31 | 2003-10-30 | Methods for making metallocene compounds |
Country Status (6)
Country | Link |
---|---|
EP (3) | EP1556527B1 (zh) |
JP (3) | JP4542506B2 (zh) |
KR (3) | KR100995223B1 (zh) |
AU (3) | AU2003301874A1 (zh) |
TW (1) | TWI274082B (zh) |
WO (3) | WO2004041832A2 (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7048968B2 (en) | 2003-08-22 | 2006-05-23 | Micron Technology, Inc. | Methods of depositing materials over substrates, and methods of forming layers over substrates |
US6987063B2 (en) | 2004-06-10 | 2006-01-17 | Freescale Semiconductor, Inc. | Method to reduce impurity elements during semiconductor film deposition |
US7816550B2 (en) * | 2005-02-10 | 2010-10-19 | Praxair Technology, Inc. | Processes for the production of organometallic compounds |
US7485338B2 (en) * | 2005-03-31 | 2009-02-03 | Tokyo Electron Limited | Method for precursor delivery |
JP2009007270A (ja) * | 2007-06-27 | 2009-01-15 | Tosoh Corp | ルテニウム化合物の製造方法および薄膜の製造方法 |
KR101598485B1 (ko) * | 2014-06-20 | 2016-02-29 | 주식회사 유진테크 머티리얼즈 | 성막용 전구체 조성물 및 이를 이용한 박막 형성 방법 |
KR101636491B1 (ko) | 2014-07-09 | 2016-07-05 | 한국화학연구원 | 루테늄 화합물, 이의 제조 방법 및 이를 이용하여 박막을 형성하는 방법 |
KR102486128B1 (ko) | 2020-12-30 | 2023-01-06 | 에스케이트리켐 주식회사 | 유기금속 할로겐화물을 함유하는 금속막 형성용 전구체, 이를 이용한 금속막 형성 방법 및 상기 금속막을 포함하는 반도체 소자. |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6207232B1 (en) * | 1997-07-17 | 2001-03-27 | Kabushikikaisha Kojundokagaku Kenkyusho | Process for producing bis(alkyl-cyclopentadienyl) ruthenium complexes and process for producing ruthenium-containing films by using the same |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3294685A (en) * | 1952-04-21 | 1966-12-27 | Gulf Research Development Co | Organic compositions containing a metallo cyclopentadienyl |
US3035978A (en) * | 1957-08-12 | 1962-05-22 | Ici Ltd | Ferrocene hematinic compositions and therapy |
GB864198A (en) * | 1959-01-07 | 1961-03-29 | Ici Ltd | A process for the manufacture of ferrocene derivatives |
BE623679A (zh) * | 1961-10-18 | |||
US3535356A (en) * | 1968-06-11 | 1970-10-20 | Gulf Research Development Co | Process for producing dicyclopentadienyliron compounds |
US4066569A (en) * | 1975-12-30 | 1978-01-03 | Hughes Aircraft Company | Dopants for dynamic scattering liquid crystals |
PL124360B1 (en) * | 1980-02-27 | 1983-01-31 | Politechnika Gdanska | Process for preparing ruthenocene |
JPH02250892A (ja) * | 1989-03-24 | 1990-10-08 | Idemitsu Kosan Co Ltd | 新規フェロセン誘導体,それを含有する界面活性剤及び有機薄膜の製造方法 |
JPH1125589A (ja) * | 1997-07-04 | 1999-01-29 | Matsushita Electric Ind Co Ltd | 磁気記録再生装置 |
JP2000281694A (ja) * | 1999-03-29 | 2000-10-10 | Tanaka Kikinzoku Kogyo Kk | 有機金属気相エピタキシー用の有機金属化合物 |
JP2001122887A (ja) * | 1999-10-25 | 2001-05-08 | Tanaka Kikinzoku Kogyo Kk | 化学気相蒸着用の有機金属化合物及びその有機金属化合物の製造方法並びにその有機金属化合物を用いた薄膜の製造方法 |
JP4162366B2 (ja) * | 2000-03-31 | 2008-10-08 | 田中貴金属工業株式会社 | Cvd薄膜形成プロセス及びcvd薄膜製造装置 |
TW508658B (en) * | 2000-05-15 | 2002-11-01 | Asm Microchemistry Oy | Process for producing integrated circuits |
JP4512248B2 (ja) * | 2000-09-26 | 2010-07-28 | 田中貴金属工業株式会社 | ビス(アルキルシクロペンタジエニル)ルテニウムの製造方法及びその方法により製造されるビス(アルキルシクロペンタジエニル)ルテニウム並びにルテニウム薄膜又はルテニウム化合物薄膜の化学気相蒸着方法 |
JP4759126B2 (ja) * | 2000-10-11 | 2011-08-31 | 田中貴金属工業株式会社 | 化学気相蒸着用の有機金属化合物及び化学気相蒸着用の有機金属化合物の製造方法並びに貴金属薄膜及び貴金属化合物薄膜の化学気相蒸着方法 |
JP3598055B2 (ja) * | 2000-11-08 | 2004-12-08 | 田中貴金属工業株式会社 | ビス(アルキルシクロペンタジエニル)ルテニウムの製造方法及びその製造方法により製造されるビス(アルキルシクロペンタジエニル)ルテニウム並びにルテニウム薄膜又はルテニウム化合物薄膜の製造方法 |
US20020161253A1 (en) * | 2001-04-30 | 2002-10-31 | Boulder Scientific Company | Synthesis of bis (cyclopentadienyl) and bis (indenyl) ruthenium complexes |
US6521772B1 (en) * | 2001-09-27 | 2003-02-18 | Praxair Technology, Inc. | Synthesis of substituted ruthenocene complexes |
US6653236B2 (en) * | 2002-03-29 | 2003-11-25 | Micron Technology, Inc. | Methods of forming metal-containing films over surfaces of semiconductor substrates; and semiconductor constructions |
-
2003
- 2003-10-29 TW TW092130102A patent/TWI274082B/zh not_active IP Right Cessation
- 2003-10-30 EP EP03810818A patent/EP1556527B1/en not_active Expired - Lifetime
- 2003-10-30 KR KR1020057007554A patent/KR100995223B1/ko active IP Right Grant
- 2003-10-30 WO PCT/US2003/034497 patent/WO2004041832A2/en active Application Filing
- 2003-10-30 JP JP2005502215A patent/JP4542506B2/ja not_active Expired - Fee Related
- 2003-10-30 WO PCT/US2003/034498 patent/WO2004042354A2/en active Application Filing
- 2003-10-30 AU AU2003301874A patent/AU2003301874A1/en not_active Abandoned
- 2003-10-30 JP JP2005502216A patent/JP4538407B2/ja not_active Expired - Fee Related
- 2003-10-30 EP EP03810819A patent/EP1556394A4/en not_active Withdrawn
- 2003-10-30 KR KR1020057007501A patent/KR101150551B1/ko active IP Right Grant
- 2003-10-30 WO PCT/US2003/034494 patent/WO2004041753A2/en active Application Filing
- 2003-10-30 AU AU2003301884A patent/AU2003301884A1/en not_active Abandoned
- 2003-10-30 EP EP03810820.5A patent/EP1556395B1/en not_active Expired - Lifetime
- 2003-10-30 KR KR1020057007504A patent/KR100997838B1/ko active IP Right Grant
- 2003-10-30 AU AU2003301873A patent/AU2003301873A1/en not_active Abandoned
- 2003-10-30 JP JP2005502217A patent/JP4560484B2/ja not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6207232B1 (en) * | 1997-07-17 | 2001-03-27 | Kabushikikaisha Kojundokagaku Kenkyusho | Process for producing bis(alkyl-cyclopentadienyl) ruthenium complexes and process for producing ruthenium-containing films by using the same |
Non-Patent Citations (7)
Title |
---|
BULLETIN DE LA SOCIETE CHIMIQUE DE FRANCE , (7-8)(PT. 2), 2413-17 CODEN: BSCFAS; ISSN: 0037-8968, 1973 * |
DATABASE CA [online] CHEMICAL ABSTRACTS SERVICE, COLUMBUS, OHIO, US; ATWOOD, JIM D. ET AL: "Novel precursors for high k dielectrics and metal electrodes Part II: Deposition", XP002463780, retrieved from STN Database accession no. 140:21747 * |
DATABASE CA [online] CHEMICAL ABSTRACTS SERVICE, COLUMBUS, OHIO, US; PATIN, HENRI ET AL: "Metallocenes. VIII. Clemmensen reduction of benzoylferrocene and 1,1-diacylferrocenes. Structure of the dimerization compounds", XP002463779, retrieved from STN Database accession no. 79:137262 * |
HUFFMAN, J. W. ET AL: "Reactions of 2-methylchloroferrocene. Evidence for the ferrocyne intermediate", JOURNAL OF ORGANIC CHEMISTRY , 36(26), 4068-72 CODEN: JOCEAH; ISSN: 0022-3263, 1971, XP002463778 * |
KAUFFMANN, THOMAS ET AL: "Multi electron ligands. XV. The reactivity of spiro[2.4]hepta-4,6-diene toward organolithium and organoelementlithium compounds", CHEMISCHE BERICHTE , 118(11), 4517-30 CODEN: CHBEAM; ISSN: 0009-2940, 1985, XP002463776 * |
PROCEEDINGS - ELECTROCHEMICAL SOCIETY , 2003-8(CHEMICAL VAPOR DEPOSITION XVI AND EUROCVD 14, VOLUME 2), 847-854 CODEN: PESODO; ISSN: 0161-6374, 2003 * |
SATO, MASARU ET AL: "Syntheses and NMR spectra of the substituted methylferrocenes", BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN , 43(4), 1142-7 CODEN: BCSJA8; ISSN: 0009-2673, 1970, XP002463777 * |
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Legal Events
Date | Code | Title | Description |
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PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
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17P | Request for examination filed |
Effective date: 20050425 |
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AK | Designated contracting states |
Kind code of ref document: A2 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR |
|
AX | Request for extension of the european patent |
Extension state: AL LT LV MK |
|
DAX | Request for extension of the european patent (deleted) | ||
RBV | Designated contracting states (corrected) |
Designated state(s): DE FR GB IE IT |
|
RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: HOOVER, CYNTHIA, A. Inventor name: THOMPSON, DAVID, M. |
|
A4 | Supplementary search report drawn up and despatched |
Effective date: 20080121 |
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17Q | First examination report despatched |
Effective date: 20100618 |
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18D | Application deemed to be withdrawn |
Effective date: 20130911 |
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STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
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R18D | Application deemed to be withdrawn (corrected) |
Effective date: 20130910 |