EP1488023A1 - Verfahren zum beschichten eines substrates und vorrichtung zur durchf hrung des verfahrens - Google Patents
Verfahren zum beschichten eines substrates und vorrichtung zur durchf hrung des verfahrensInfo
- Publication number
- EP1488023A1 EP1488023A1 EP03744817A EP03744817A EP1488023A1 EP 1488023 A1 EP1488023 A1 EP 1488023A1 EP 03744817 A EP03744817 A EP 03744817A EP 03744817 A EP03744817 A EP 03744817A EP 1488023 A1 EP1488023 A1 EP 1488023A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- gas
- starting material
- process chamber
- particular according
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
Definitions
- the invention relates to a method for coating at least one substrate with a thin layer in a process chamber of a reactor, wherein at least one solid or liquid starting material stored in a storage container is brought into the process chamber as a gas or aerosol by means of a carrier gas and there on a substrate condensed, the solid or liquid starting material being kept at a source temperature which is higher than the substrate temperature.
- the invention also relates to a device, in particular for carrying out this method, with a reactor housing and a process chamber arranged therein, in which there is a temperature-controlled substrate holder and a temperature-adjustable gas inlet element, with several temperature-controlled containers for receiving a solid or liquid starting material each Gas inlet organ leading, temperable gas lines for a carrier gas and the respective starting material brought into the gas form.
- the raw material is stored in the containers at a regulated pressure.
- the coating in the process chamber also takes place at a regulated pressure.
- Such a device is described in WO 01/61077 A2.
- a coolable substrate holder in a process chamber of a reactor, which is opposite a heatable gas inlet element in the form of a shower head.
- Gas outputs through which a carrier gas and gaseous starting materials dissolved in the respective carrier gas are fed to the process chamber, separate into the gas inlet member.
- the gaseous raw materials come from containers that are heated to a source temperature. These containers contain gaseous or liquid starting materials. The liquid or solid starting material vapors through the closable container openings. This vapor is carried by the carrier gas.
- the layer thickness to be achieved in the evaporation process is determined by the deposition time.
- the deposition rate is determined by the temperature of the evaporator boat. If several sources, i.e. several boats or crucibles, are used, cross-contamination of the different source substances can occur. Each source must therefore be placed in a separate process chamber. Furthermore, an undesired distribution of materials with high vapor pressure occurs in the entire deposition system. This leads to an uncontrolled carryover into subsequent layers of the structure or into the next process.
- OLEDs with high luminosity, low operating voltages and a long service life require a sequence of many doped and undoped layers. These have to be separated one after the other in a process.
- Layers include electron and hole conductors, barrier layers, and active light-emitting, light-guiding, or light-reflecting layers. These layers should preferably be produced in such a way that the composition and thus their properties change in the direction of deposition.
- the layer properties, ie the layer composition or the dopant content, should be able to change both abruptly and in a controlled manner. The former is required for sharp interfaces between the layers.
- the object of the invention is to remedy the disadvantages discussed above and to provide a method by means of which the composition, layer sequence and properties of the interface, which determine the properties of the components, can be set in a targeted manner.
- the claim 1 aims at a method in which the carrier gas flows through the starting material and the supply of the gaseous starting material to the process chamber is controlled by means of at least one valve and a mass flow controller.
- the valve is preferably a changeover valve which is arranged between the container and the gas inlet element.
- the mass flow controller can be arranged in front of the container.
- the container is thermostatted to keep the evaporation rate constant.
- the gas feed line to the container is also preferably thermostatted, so that the gas flowing into the container has the same temperature as that of the solid or liquid starting material.
- a pressure control element can be located downstream of the container in the gas line, by means of which the pressure in the container is kept at a predefined value.
- the gas flow flowing out of the container which consists of the carrier gas and the gaseous starting material dissolved therein, can either into the process chamber or into an exhaust pipe.
- this vent-run circuit an exact presetting of the gas concentration and a sudden connection of the starting material is possible.
- at least two different containers contain different starting materials and flow individually through a carrier gas and the supply of the respective gaseous starting materials to the process chamber is controlled by means of valves and mass flow controllers.
- a valve and a mass flow controller are assigned to each container. It can further be provided that the supply of at least one of the at least two starting materials dissolved in one carrier gas is changed by varying the regulated mass flow during the deposition process.
- the mass flow is switched on or off.
- the mass flow can also increase or decrease steadily.
- Organic molecules are preferably used as starting materials.
- the deposited layer can be processed into an OLED.
- a plurality of layers consisting of one or more starting materials are preferably deposited in succession.
- the layers of these layer sequences can consist of different materials.
- the device according to the invention is characterized in that the gas flows which are led to the gas inlet element can be conducted into the process chamber in a time-controllable manner by means of valves and gas mass flow controllers. For this purpose, provision is made in particular for each of the containers to have a flow from bottom to top.
- the gaseous or liquid starting material can therefore lie on a porous intermediate wall of the container through which the carrier gas, which is heated to the temperature of the starting material, flows.
- the mass flow controllers are preferably arranged upstream of the container.
- a changeover valve is located downstream of the container.
- a pressure regulator can also be arranged downstream of the container and is located between the container and the changeover valve.
- the gaseous starting materials for producing the component structures are transported in a gas stream, for example nitrogen, argon or helium.
- the deposition rate, the composition and the amount of dopant that is incorporated into the layer is determined by the concentration of the respective starting substances in the gas stream.
- the respective concentration in the gas flow is set by means of several independent mass flow controllers. Dilution lines are also provided, which open into the feed line to the gas inlet element after the changeover valve. It is possible to change the vapor pressure of the starting materials in the respective containers independently of one another by changing the source temperature in order to significantly increase or decrease the concentration in the gas flow.
- the respective source container is constructed in such a way that the composition of the gas flow changes reproducibly and almost linearly with the carrier gas flow.
- the lines from the sources to the reactor are constructed in such a way that the set gas compositions are retained.
- the gas lines are in particular tempered in such a way that the vapor pressure of the gaseous starting material in the carrier gas is lower than the saturation vapor pressure, so that no condensation can occur. These requirements also apply to the temperature of the gas inlet element.
- the pressures in the lines or in the tanks are regulated via the pressure regulator mentioned above.
- the valves enable the source to be switched off and on abruptly and reproducibly. These are as close as possible to the reactor. Since all sources are spatially separated from one another, there is no cross-termination of the sources.
- the deposition of a layer sequence which consists of several qualitatively different layers, can take place in a process chamber, namely in steps that follow one another directly.
- the gas inlet element of the reactor and the gas path from the gas inlet element to the substrate are designed in such a way that the gas compositions set do not change unreproducibly.
- the Layer thicknesses are therefore essentially only defined by the switching times. Due to the construction of the process chamber and the periphery according to the invention, that is to say the arrangement of the valves of the containers and the mass flow controller, a very rapid change in the composition of the gas phase and thus the layer composition is possible.
- the vent-run circuit described above enables the gas concentration to be precisely preset. There are preferably no non-flushed empty spaces in the entire deposition system, so that there is no undesired mixing of the gases. For these reasons, the properties of the interfaces between the individual deposited layers can be set precisely.
- the surfaces can be flushed with an inert gas.
- the pause times can be freely selected, in particular due to the vent run circuit. Minimum break times in the range of a few fractions of a second are possible. Switching times for the position or pauses from a fraction of a second to several minutes can be set.
- the process parameters in the growth breaks are largely freely adjustable. For example, the gas flow and the temperature can be preset.
- the method according to the invention is characterized in that the growth of the layers cannot only be started gradually or can be ended gradually.
- the layer growth can rather be switched on or off abruptly. This leads to a precise control of the interfaces of the individual layers deposited on one another.
- the layers can have a thickness of only a few nanometers.
- Subatomic layers can also be deposited between the individual layers in order to influence the interfaces. The surface charges can be saturated using these subatomic layers. This leads to a desired band bending.
- Metals or polymers can be deposited to influence the interfaces and in particular the interface charges. However, it is also possible to influence the interfaces only by pausing growth. For this purpose, the deposition is switched off abruptly. There is a period of waiting. There is no growth during this time.
- the surface can change electronically.
- the layer growth can be started abruptly or gradually.
- solids or liquids are used as starting materials.
- Starting materials that can be evaporated can be used.
- starting materials can also be used in which the evaporation temperature is higher than the decomposition temperature.
- Such substances cannot be evaporated because they decompose chemically beforehand. These substances can be transported as aerosol, i.e. as a mist.
- FIG. 1 shows the roughly schematic structure of an apparatus for carrying out the method with a reactor having a process chamber and two containers for the starting materials
- 3a shows the time course of the concentration of a first starting material (A) passed into the process chamber, 3b, corresponding to FIG. 3a, the time course of the concentration of a second starting material fed into the process chamber
- FIG. 6 shows the plan of a rectangular gas outlet element in the form of a square
- Fig. 7 is the plan of a rectangular gas outlet in the form of a narrow strip
- FIG. 8 shows a further exemplary embodiment according to FIG. 4.
- the device shown in Figure 1 consists of a reactor 1, which has a temperature-controlled housing.
- the heating and the gas discharge and other known design features of this reactor 1 are not shown in the drawing for the sake of clarity.
- the bottom of the process chamber 2 located in the reactor is formed by a substrate holder 7, which can be tempered.
- the substrate holder 7 is cooled so that the gaseous starting materials flowing through the gas inlet element 4 into the process chamber 2 condense on the substrate 3 lying on the substrate holder 7 in order to form a thin layer.
- the gas inlet element 4 can have the shape of a shower head.
- the temperature of the lines 5 and the gas inlet element 4 is higher than the substrate temperature and so high that the gaseous starting material does not condense, does not change chemically, in particular does not decompose, within the lines.
- the gaseous starting materials are provided in gas sources. These gas sources consist of a container 11 which has a temperature-controlled wall 12. Wall 12 is heated to a source temperature that is higher than the substrate temperature. A temperature-controlled feed line 13 opens into the bottom of the container 11. The line is preferably kept at the same temperature as the container wall 12. The line 13 is fed with a carrier gas, the flow of which is set by a mass flow controller 9. Nitrogen, argon or helium can be used as carrier gas. This carrier gas flows through a porous intermediate wall 14. The solid, optionally also liquid starting material lies on the porous intermediate wall 14. The starting material consists of small organic molecules, such as those mentioned in US Pat. No. 5,554,220. The carrier gas flows through the liquid or solid starting material 15.
- the carrier gas stream flowing out on the container opening above is loaded with the gaseous starting material, preferably saturated.
- the temperature-controlled line 6 opens into a pressure regulator 16, by means of which the container pressure is regulated. Downstream of the pressure regulator 16 there is a temperature-controlled changeover valve 8, by means of which the gas flow can be directed either into the gas inlet element 4 or into a vent line 10.
- a temperature-controlled changeover valve 8 by means of which the gas flow can be directed either into the gas inlet element 4 or into a vent line 10.
- carrier gas lines 17 open into the gas line 5 in order to be able to carry out a supplementary dilution or to carry out a bypass operation. borrowed.
- a gas stream can only be passed through line 17 when valve 8 switches the gas stream coming from container 15 into vent line 10.
- the gas streams flowing through line 17 and vent line 19 are preferably of the same size.
- FIGS. 2a to 2c show the method according to the invention using the example of producing a dopant profile.
- the dopant gas concentration which is depicted in FIG. 2a, can be adjusted within the gas phase above the substrate by a corresponding variation of the carrier gas stream guided into the container by the mass flow controller 9.
- the dopant concentration increases linearly with time.
- the dopant concentration continues to increase due to a corresponding increase in the gas flow through the container 15.
- the dopant concentration is linearly reduced to zero by continuously reducing the gas flow.
- valve 8 is closed.
- phase T6 the gas flow is not changed linearly over time.
- phase T7 the gas flow is also not linearly reduced in time.
- the layer growth takes place with a uniform growth rate. Only the dopant incorporation is variable in time. The dopant profile shown in FIG. 2c results from this.
- FIGS. 3a to 3c show by way of example how the layer composition can be varied over time.
- Two starting materials A and B can be introduced into process chamber 3 independently of one another. Any raw material A, B is in a separate container 11.
- the gas flows through the container 11 are individually adjustable.
- the gas flow that flows through the container 11 in which the substance A is located is shown in FIG. 3a.
- the concentration of this gaseous starting material in the process chamber is corresponding.
- FIG. 3b shows the gas flow flowing through the container 11 contained in the starting material B in time.
- the concentration of the gaseous component B changes in the gas phase above the substrate 3 in accordance with the gas flow.
- phase T1 the changeover valve 8 assigned to material B is closed and only the starting material A is passed into the process chamber.
- the associated layer contains only component A.
- the changeover valve assigned to component A is switched to Vent, that is to say closed, and only component B is passed into the process chamber.
- the assigned layer consists only of material B.
- phase T3 material A is switched on by switching valve 8.
- the associated layer consists of both materials.
- phase T4 the current through the container containing material B is reduced. More material A than material B is deposited.
- phase T5 the gas flow through the container containing component A is increased. The layer composition changes accordingly.
- the valve belonging to component A is switched to Vent.
- the layer consists only of component B.
- both valves 8 are switched to vent. There is no layer growth.
- the process chamber can be flushed with an inert gas.
- both valves 8 are switched to run.
- a layer consisting of components A and B is deposited. It is of course also possible to vary the carrier gases flowing through the containers containing components A or B over time, as shown in FIG. 2a. Then the composition of the layer changes continuously. Ramp profiles can be produced in this way.
- variation of the composition of the gas phase in the process chamber 2 directly above the substrate 3 is also possible by varying the temperature inside the container 11.
- a faster variation can be achieved by varying the gas flow using the mass flow controller 9.
- variation can also be achieved by changing the pressure.
- the preset value of the pressure control device 16 is changed.
- the interfaces between the individual layers deposited on one another can be influenced.
- a subatomic layer for example of a metal or a polymer
- Surface charges can be saturated by means of such or a similar intermediate layer. This leads to a controlled band bending.
- the interface properties are influenced by merely interrupting the growth process.
- the typical layer thickness of a deposited layer is between 10 and 15 nanometers.
- the entire structure, consisting of a large number of layers, has a total thickness of 100 to 150 nanometers.
- the method according to the invention can also be used to produce white light emitters for lighting technology. According to the invention, those materials can also be used as starting materials that cannot be evaporated due to their low decomposition temperature. Such non-vaporizable raw materials, in which the evaporation temperature is higher than the decomposition temperature, are transported as aerosol.
- FIG. 4 shows an embodiment in which a plurality of thermostatted chambers 18 a, 18 b and 18 c are provided.
- the individual thermostatted chambers 18 a, 18 b and 18 c are kept at different temperatures Ta, Tb, Tc.
- the outline shape of the gas outlet surface of the gas inlet member 4 can have various shapes. As shown in FIG. 5, the shape can be circular disk-shaped. As shown in FIG. 6, the plan shape of the gas outlet surface of the gas inlet element 6 can be square. This shape and the narrow, quasi-linear shape of the gas outlet surface shown in FIG. 7 is used in particular in devices or methods in which an endless substrate is coated. Such a device is shown schematically in FIG. 8. There, the endless, flexible substrate 3 enters the process chamber on one side and slides over a temperature-adjustable substrate holder 7. The flexible substrate 3 exits on the other side of the process chamber.
- a multiplicity of layers are preferably deposited within the process chamber. the.
- a protective, insulating or anti-reflective layer can also be applied to the layer sequence.
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10212923A DE10212923A1 (de) | 2002-03-22 | 2002-03-22 | Verfahren zum Beschichten eines Substrates und Vorrichtung zur Durchführung des Verfahrens |
DE10212923 | 2002-03-22 | ||
PCT/EP2003/002860 WO2003080893A1 (de) | 2002-03-22 | 2003-03-19 | Verfahren zum beschichten eines substrates und vorrichtung zur durchführung des verfahrens |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1488023A1 true EP1488023A1 (de) | 2004-12-22 |
Family
ID=28050772
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP03744817A Withdrawn EP1488023A1 (de) | 2002-03-22 | 2003-03-19 | Verfahren zum beschichten eines substrates und vorrichtung zur durchf hrung des verfahrens |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP1488023A1 (de) |
JP (1) | JP2005520687A (de) |
KR (1) | KR20040104527A (de) |
AU (1) | AU2003215669A1 (de) |
DE (1) | DE10212923A1 (de) |
TW (1) | TW200304959A (de) |
WO (1) | WO2003080893A1 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
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DE10256850A1 (de) * | 2002-12-04 | 2004-06-24 | Basf Ag | Verfahren und Aufdampfung von Verbindung(en) auf einen Träger |
DE10315215A1 (de) * | 2003-04-03 | 2004-10-14 | Basf Ag | In-situ Neubeschichtung von Katalysatorschüttungen |
EP1741802B1 (de) * | 2004-03-29 | 2013-08-21 | Tadahiro Ohmi | Filmbildungsvorrichtung und filmbildungsverfahren |
DE102006027932A1 (de) | 2006-06-14 | 2007-12-20 | Aixtron Ag | Verfahren zum selbstlimitierenden Abscheiden ein oder mehrerer Monolagen |
JP5043394B2 (ja) * | 2006-09-29 | 2012-10-10 | 東京エレクトロン株式会社 | 蒸着装置およびその運転方法 |
DE102007030499A1 (de) * | 2007-06-30 | 2009-01-08 | Aixtron Ag | Vorrichtung und Verfahren zum Abscheiden von insbesondere dotierten Schichten mittels OVPD oder dergleichen |
DE102008045982A1 (de) | 2008-09-05 | 2010-03-11 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung von nanoskaligen Netzwerken auf Oberflächen |
CN102770946A (zh) * | 2010-02-26 | 2012-11-07 | 泰拉半导体株式会社 | 多晶硅层的制造方法及用于其的金属混合层形成装置 |
DE102011051260A1 (de) * | 2011-06-22 | 2012-12-27 | Aixtron Se | Verfahren und Vorrichtung zum Abscheiden von OLEDs |
WO2013011974A1 (ja) * | 2011-07-21 | 2013-01-24 | Jsr株式会社 | 金属体を備える基体の製造方法 |
KR20150065515A (ko) * | 2013-12-05 | 2015-06-15 | 롬엔드하스전자재료코리아유한회사 | 유기전계발광재료 정제장치 및 정제방법 |
DE102014100135A1 (de) | 2014-01-08 | 2015-07-09 | Aixtron Se | Gasmischvorrichtung an einem Reaktor mit Wegeventil |
DE102014115497A1 (de) | 2014-10-24 | 2016-05-12 | Aixtron Se | Temperierte Gaszuleitung mit an mehreren Stellen eingespeisten Verdünnungsgasströmen |
DE102019128752A1 (de) | 2019-10-24 | 2021-04-29 | Apeva Se | Verfahren zur Herstellung übereinander gestapelter OLEDs |
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JP2794294B2 (ja) * | 1988-07-08 | 1998-09-03 | 科学技術振興事業団 | 酸化物超伝導体厚膜の形成法並びに装置 |
JPH06158306A (ja) * | 1992-11-27 | 1994-06-07 | Vacuum Metallurgical Co Ltd | ガス・デポジション法によるスパッター用ターゲットの製造方法およびその製造装置 |
JPH09268378A (ja) * | 1996-04-01 | 1997-10-14 | Dainippon Printing Co Ltd | 厚膜パターン形成方法及び該方法による厚膜パターン |
JP3967455B2 (ja) * | 1998-03-30 | 2007-08-29 | Dowaホールディングス株式会社 | カリウム含有薄膜及びその製法 |
DE10007059A1 (de) * | 2000-02-16 | 2001-08-23 | Aixtron Ag | Verfahren und Vorrichtung zur Herstellung von beschichteten Substraten mittels Kondensationsbeschichtung |
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2002
- 2002-03-22 DE DE10212923A patent/DE10212923A1/de not_active Ceased
-
2003
- 2003-03-19 AU AU2003215669A patent/AU2003215669A1/en not_active Abandoned
- 2003-03-19 WO PCT/EP2003/002860 patent/WO2003080893A1/de active Application Filing
- 2003-03-19 KR KR10-2004-7014802A patent/KR20040104527A/ko not_active Application Discontinuation
- 2003-03-19 EP EP03744817A patent/EP1488023A1/de not_active Withdrawn
- 2003-03-19 JP JP2003578614A patent/JP2005520687A/ja active Pending
- 2003-03-21 TW TW092106298A patent/TW200304959A/zh unknown
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See references of WO03080893A1 * |
Also Published As
Publication number | Publication date |
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DE10212923A1 (de) | 2004-01-08 |
KR20040104527A (ko) | 2004-12-10 |
AU2003215669A1 (en) | 2003-10-08 |
WO2003080893B1 (de) | 2003-12-18 |
JP2005520687A (ja) | 2005-07-14 |
WO2003080893A1 (de) | 2003-10-02 |
TW200304959A (en) | 2003-10-16 |
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