EP1394866A1 - Procede de fabrication d'un dispositif a semi-conducteur a base d'un compose de nitrure du groupe iii - Google Patents

Procede de fabrication d'un dispositif a semi-conducteur a base d'un compose de nitrure du groupe iii Download PDF

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Publication number
EP1394866A1
EP1394866A1 EP02730877A EP02730877A EP1394866A1 EP 1394866 A1 EP1394866 A1 EP 1394866A1 EP 02730877 A EP02730877 A EP 02730877A EP 02730877 A EP02730877 A EP 02730877A EP 1394866 A1 EP1394866 A1 EP 1394866A1
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Prior art keywords
layer
electrode
compound semiconductor
nitride compound
iii nitride
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EP02730877A
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German (de)
English (en)
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EP1394866A4 (fr
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Toshiya Toyoda Gosei Co. Ltd. Uemura
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Toyoda Gosei Co Ltd
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Toyoda Gosei Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Definitions

  • the present invention relates to a Group III nitride compound semiconductor device.
  • the invention is suitable for improvement in electrodes of a Group III nitride compound semiconductor light-emitting device such as a blue light-emitting diode, etc.
  • a light-transmissive electrode is stuck to a p-type layer so that an electric current can be injected into a wide range of a surface of the p-type layer.
  • the light-transmissive electrode is formed as follows.
  • a second electrode layer e.g., Au
  • a first electrode layer e.g., Co
  • the light-transmissive electrode-forming layer is heat-treated in an oxygen-containing gas at a temperature of 500°C to 600°C.
  • the light-transmissive electrode-forming layer and the p-type layer are alloyed so that ohmic contact is ensured between the two layers.
  • the distribution of constituent elements of the first electrode layer changes on this occasion.
  • the p-seat electrode is formed by lamination of a plurality of electrode layers (e.g., successive lamination of Cr and Au viewed from the lower side).
  • a plurality of electrode layers e.g., successive lamination of Cr and Au viewed from the lower side.
  • the invention is developed to solve the aforementioned problem and configured as follows.
  • a method for producing a Group III nitride compound semiconductor device includes:
  • the producing method according to the invention sufficient ohmic contact can be ensured between the electrode formed by lamination of the first electrode layer and the second electrode layer and the p-type layer.
  • the condition for heat treatment in an oxygen-containing atmosphere is low temperature (gentle condition), so that a surface of the p-seat electrode can be prevented from being oxidized and a undercoat metal layer for the p-seat electrode can be prevented from being migrated and segregated on the surface of the p-seat electrode.
  • each Group III nitride compound semiconductor is represented by the general formula: Al X Ga Y In 1-X-Y N (0 ⁇ X ⁇ 1, 0 ⁇ Y ⁇ 1, 0 ⁇ X+Y ⁇ 1) which includes so-called binary compounds such as AlN, GaN and InN, and so-called ternary compounds such as Al x Ga 1-x N, Al x In 1-x N and Ga x In 1-x N (0 ⁇ x ⁇ 1 in the above).
  • the Group III elements may be partially replaced by boron (B), thallium (Tl), or the like.
  • the nitrogen (N) may be partially replaced by phosphorus (P), arsenic (As), antimony (Sb), bismuth (Bi), or the like.
  • the Group III nitride compound semiconductor layer may contain an optional dopant. Si, Ge, Se, Te, C, or the like, can be used as n-type impurities. Mg, Zn, Be, Ca, Sr, Ba, or the like, can be used as p-type impurities. Incidentally, after doped with p-type impurities, the group III nitride compound semiconductor may be subjected to electron beam irradiation or plasma irradiation or to heating in a furnace but not essentially. A method for forming the Group III nitride compound semiconductor layer is not particularly limited.
  • the Group III nitride compound semiconductor layer may be formed by a metal organic chemical vapor deposition method (MOCVD method) or by a known method such as a molecular beam epitaxy method (MBE method), a halide vapor-phase epitaxy method (HVPE method), a sputtering method, anion-platingmethod, an electron showering method, etc.
  • MOCVD method metal organic chemical vapor deposition method
  • MBE method molecular beam epitaxy method
  • HVPE method halide vapor-phase epitaxy method
  • sputtering method anion-platingmethod
  • an electron showering method etc.
  • examples of the Group III nitride compound semiconductor device include: optical devices such as a light-emitting diode, a photo acceptance diode, a laser diode, a solar cell, etc.; bipolar devices such as a rectifier, a thyristor, a transistor, etc.; unipolar devices such as an FET, etc.; and electronic devices such as a microwave device, etc.
  • optical devices such as a light-emitting diode, a photo acceptance diode, a laser diode, a solar cell, etc.
  • bipolar devices such as a rectifier, a thyristor, a transistor, etc.
  • unipolar devices such as an FET, etc.
  • electronic devices such as a microwave device, etc.
  • the invention may be also applied to laminates which are intermediates of these devices.
  • a homo structure, a hetero structure or a double hetero structure may be used as the structure of the light-emitting device.
  • a quantum well structure single quantum well structure or multiple quantum well structure may be also used.
  • Electrode layers formed on a p-type layer are not particularly limited if ionization potential of the constituent element of the second electrode layer is higher than that of the constituent element of the first electrode layer.
  • metal elements described below are preferably used.
  • the constituent element of the first electrode layer is an element lower in ionization potential than the constituent element of the second electrode layer, and that the constituent element of the second electrode layer is an element better in ohmic contact with semiconductor than the constituent element of the first electrode layer.
  • the element distribution in the direction of depth from a surface of semiconductor is changed by first heat treatment in an oxygen-containing atmosphere so that the constituent element of the second electrode layer permeates more deeply than the constituent element of the first electrode layer. That is, the element distribution of the electrode layers is reversed to the distribution at the time of formation of the electrode layers.
  • the constituent element of the second electrode layer formed on the upper side is turned on the lower side while the constituent element of the first n-electrode layer formed on the lower side is turned on the upper side.
  • the constituent element of the first electrode layer is at least one element selected from the group consisting of nickel (Ni), cobalt (Co), iron (Fe), copper (Cu), chromium (Cr), tantalum (Ta), vanadium (V), manganese (Mg), aluminum (Al), and silver (Ag).
  • the film thickness of the first electrode layer is selected to be in a range of from 0.5 nm to 15 nm.
  • the constituent element of the second electrode layer is at least one element selected from the group consisting of palladium (Pd), gold (Au), iridium (Ir), and platinum (Pt).
  • the film thickness of the second electrode layer is selected to be in a range of from 3.5 nm to 25 nm.
  • the constituent element of the first electrode layer is Co
  • the constituent element of the second electrode layer is Au. In this case, the element distribution in the direction of depth from the semiconductor surface is changed by the heat treatment so that Au permeates more deeply than Co.
  • the material for forming a p-seat electrode is not particularly limited either.
  • the p-seat electrode is formed as a structure in which a Cr layer as a first metal layer, an Au layer as a second metal layer and an Al layer as a third metal layer are laminated successively, viewed from the lower side.
  • the first metal layer is made of an element lower in ionization potential than that of the second metal layer so that the first metal layer can be bonded firmly to a layer under the first metal layer.
  • the second metal layer is made of an element good in bonding characteristic to Al or Au and non-reactive to the light-transmissive electrode.
  • the third metal layer is preferably made of an element which can be bonded firmly to a protective film.
  • the constituent element of the first metal layer is at least one element selected from the group consisting of nickel (Ni), iron (Fe), copper (Cu), chromium (Cr), tantalum (Ta), vanadium (V), manganese (Mg), and cobalt (Co).
  • the film thickness of the first metal layer is in a range of from 1 nm to 300 nm.
  • the constituent element of the third metal layer is at least one element selected from the group consisting of aluminum (Al), nickel (Ni), and titanium (Ti).
  • the film thickness of the third metal layer is in a range of from 1 nm to 30 nm.
  • the constituent element of the second metal layer is gold (Au).
  • the film thickness of the second metal layer is in a range of from 0.3 ⁇ m to 3 ⁇ m.
  • a p-auxiliary electrode may be formed by using the same material and the same method as those of the p-seat electrode.
  • the p-auxiliary electrode has the same thickness as that of the p-seat electrode.
  • the p-auxiliary electrode may be formed independent of the p-seat electrode.
  • the material and thickness of the p-auxiliary electrode may be selected to be different from those of the p-seat electrode.
  • the shape of the p-seat electrode is not particularly limited if the p-seat electrode has an area sufficient to bond an electrically conductive wire by a known method.
  • a shape different from the shape of an n-seat electrode is preferably used as the shape of the p-seat electrode.
  • the p-auxiliary electrode is preferably formed so as to be narrow because the p-auxiliary electrode blocks off light.
  • the width of the p-auxiliary electrode is selected to be preferably in a range of from 1 ⁇ m to 40 ⁇ m, more preferably in a range of from 2 ⁇ m to 30 ⁇ m, more and more preferably in a range of from 3 ⁇ m to 25 ⁇ m, more and more and more preferably in a range of from 3 ⁇ m to 20 ⁇ m, most preferably in a range of from 5 ⁇ m to 15 ⁇ m.
  • irregularities may be provided in the circumference of the p-seat electrode and/or the p-auxiliary electrode so that the area of contact with the light-transmissive electrode can be increased.
  • the circumferential surface of the p-seat electrode is inclined.
  • the circumferential surface of the seat electrode may be tapered so that a protective film (an SiO 2 film, etc.) formed on surfaces of the seat electrode and the light-transmissive electrode can be formed on the tapered portion to have a film thickness substantially as designed.
  • the first heating step is carried out in an atmosphere substantially containing oxygen.
  • the following gas may be preferably used for achieving the oxygen-containing atmosphere. That is, at least one member selected from the group consisting of O 2 , O 3 , CO, CO 2 , NO, N 2 O, NO 2 and H 2 O or a mixture gas thereof may be used as an oxygen-containing gas.
  • a mixture gas containing an insert gas and at least one member selected from the group consisting of O 2 , O 3 , CO, CO 2 , NO, N 2 O, NO 2 and H 2 O or a mixture gas containing an inert gas and a mixture gas of members selected from the group consisting of O 2 , O 3 , CO, CO 2 , NO, N 2 O, NO 2 and H 2 O may be used as the oxygen-containing gas.
  • the oxygen-containing gas means a gas of oxygen atoms or molecules having oxygen atoms.
  • an oxidizing gas atmosphere is preferred.
  • the pressure of the atmosphere at the time of heating may be preferably not lower than a pressure under which a gallium nitride compound semiconductor is not thermally decomposed at the heat-treatment temperature.
  • the gas may be preferably introduced so that the pressure of the gas is not lower than the decomposition pressure of the gallium nitride compound semiconductor.
  • the oxygen-containing gas can work sufficiently if the pressure of the whole gas is not lower than the decomposition pressure of the gallium nitride compound semiconductor and the rate of the O 2 gas to the whole gas is not lower than about 10 -6 .
  • the oxygen-containing gas can work sufficiently if a very small amount of the oxygen-containing gas is present.
  • the upper limit of the amount of the oxygen-containing gas introduced is not particularly limited from the point of view of electrode alloying characteristic. That is, any amount of the oxygen-containing gas may be used if production can be made.
  • the heat-treatment temperature is preferably selected to be lower than 440°C. If the heat-treatment temperature is not lower than 440°C, there is the possibility that the aforementioned problem may occur.
  • the heat-treatment temperature is more preferably lower than 420°C, more and more preferably lower than 400°C.
  • the heating time is not particularly limited if migration can occur between the first electrode layer and the second electrode layer.
  • the heating time is selected to be preferably in a range of from 5 minutes to 1000 minutes, more preferably in a range of from 10 minutes to 500 minutes, more and more preferably in a range of from 30 minutes to 300 minutes.
  • the second heating step is carried out in an atmosphere substantially containing no oxygen. That is, heat treatment is preferably carried out in a non-oxidizing atmosphere or in a reducing atmosphere without use of the oxygen-containing gas used in the first heating step. Specifically, heat treatment is preferably carried out in an inert gas such as N 2 , He, Ar, etc., in a reducing gas such as H 2 , etc. or in a mixture gas of these gases.
  • an inert gas such as N 2 , He, Ar, etc.
  • a reducing gas such as H 2 , etc. or in a mixture gas of these gases.
  • the heat-treatment temperature is selected to be higher than the heat-treatment temperature used in the first heating step. As a result, ohmic contact can be obtained between the electrode layer and the p-type layer. If the heat treatment at a high temperature is omitted, ohmic contact cannot be obtained between the two layers (see Comparative Example 3 in Table 1). Therefore, the required heat-treatment condition in the second heating step is heating temperature and heating time sufficient to ensure ohmic contact between the electrode layer and the p-type layer.
  • the heat-treatment temperature is selected to be preferably not lower than 440°C, more preferably not lower than 480°C, more and more preferably not lower than 520°C.
  • the heating time is selected to be preferably in a range of from 0.1 minutes to 180 minutes, more preferably in a range of from 0.3 minutes to 60 minutes, more and more preferably in a range of from 0.5 minutes to 30 minutes.
  • the pressure of the atmosphere in the second heating step may be preferably not lower than a pressure under which a Group III nitride compound semiconductor is not thermally decomposed at the heat-treatment temperature.
  • the sequence of execution of the first heating step and the second heating step is not particularly limited.
  • the supply of the oxygen-containing gas may be stopped so that the second heating step can be carried out after that.
  • An n-type layer 3 of GaN doped with Si as n-type impurities is formed on a substrate 1 through a buffer layer 2.
  • the substrate 1 is not limited thereto.
  • Sapphire, spinel, silicon, silicon carbide, zinc oxide, gallium phosphide, gallium arsenide, magnesium oxide, manganese oxide, Group III nitride compound semiconductor single crystal, etc. may be used as the substrate 1.
  • the buffer layer is formed of AlN by an MOCVD method, the buffer layer is not limited thereto. GaN, InN, AlGaN, InGaN, AlInGaN, etc. may be used as the material of the buffer layer.
  • a molecular beam epitaxy method (MBE method), a halide vapor-phase epitaxy method (HVPE method), a sputtering method, an ion-plating method, an electron showering method, etc. may be used as the method for producing the buffer layer.
  • MBE method molecular beam epitaxy method
  • HVPE method halide vapor-phase epitaxy method
  • sputtering method an ion-plating method
  • an electron showering method etc.
  • both the substrate and the buffer layer may be removed in accordance with necessity.
  • the n-type layer is made of GaN
  • AlGaN, InGaN or AlInGaN may be used.
  • n-type layer is doped with Si as n-type impurities, Ge, Se, Te, C, etc. may be used as other n-type impurities.
  • the n-type layer 3 may be of a double-layered structure having an n- layer of low electron density on the side of the layer 4 containing a light-emitting layer and an n+ layer of high electron density on the buffer layer 2 side.
  • the layer 4 containing a light-emitting layer may contain a light-emitting layer of a quantum well structure.
  • a single hetero type, a double hetero type or a homo-junction type structure may be used as the structure of the light-emitting device.
  • the layer 4 containing a light-emitting layer may contain a Group III nitride compound semiconductor layer disposed on the p-type layer 5 side, doped with an acceptor such as magnesium etc. and having a wide band gap. This is provided for effectively preventing electrons injected into the layer 4 containing a light-emitting layer from diffusing into the p-type layer 5.
  • a p-type layer 5 of GaN doped withMg as p-type impurities is formed on the layer 4 containing a light-emitting layer.
  • the p-type layer may be made of AlGaN, InGaN or InAlGaN. Zn, Be, Ca, Sr or Ba may be used as p-type impurities.
  • the p-type layer 5 may be of a double-layered structure having a p- layer of low hole density on the side of the layer 4 containing a light-emitting layer and a p+ layer of high hole density on the electrode side.
  • each Group III nitride compound semiconductor layer may be formed by execution of MOCVD in a general condition or may be formed by a method such as a molecular beam epitaxy method (MBE method) , a halide vapor-phase epitaxy method (HVPE method), a sputtering method, an ion-plating method, an electron showering method, etc.
  • MBE method molecular beam epitaxy method
  • HVPE method halide vapor-phase epitaxy method
  • sputtering method an ion-plating method
  • an electron showering method etc.
  • a mask is formed and the p-type layer 5, the layer 4 containing a light-emitting layer and the n-type layer 3 are partially removed by reactive ion etching to reveal an n-electrode-forming surface 11 on which an n-electrode 9 is to be formed.
  • a Co layer (1.5 nm) 61 as a first electrode layer and an Au layer (60nm) 62 as a second electrode layer are laminated successively on the whole surface of a wafer by an evaporation apparatus.
  • a photo resist is applied evenly and removed from the n-electrode-forming surface 11 and an approximately 10 ⁇ m-wide portion (clearance region) outside the circumference of the n-electrode-forming surface 11 by photolithography.
  • Light-transmissive electrode-forming materials 61 and 62 are removed from the portion by etching to thereby reveal the p-type layer 5. Then, the photo resist is removed.
  • a p-seat electrode-forming layer 70 is formed by a lift-off method in such a manner that a Cr layer (30 nm) 71, an Au layer (1.5 ⁇ m) 72 and an Al layer (10 nm) 73 are laminated successively by vapor deposition.
  • an n-electrode-forming layer is also formed by a lift-off method in such a manner that vanadium and aluminum are laminated successively.
  • Example 1 Low 100 ⁇ ⁇ Example 2 Low 100 ⁇ ⁇ Example 3 Low 100 ⁇ ⁇ Example 4 Low 100 ⁇ ⁇ Example 5 Low 100 ⁇ ⁇ Example 6 Low 100 ⁇ ⁇ Example 7 Low 100 ⁇ ⁇ Example 8 Low 100 ⁇ ⁇ Comparative Example 1 Low 100 ⁇ ⁇ Comparative Example 2 High 100 ⁇ ⁇ Comparative Example 3 High 100 ⁇ ⁇
  • the first heating step heat treatment in an oxygen-containing atmosphere at a relatively low temperature
  • the first heating step is expressed in italics.
  • W/B property (wire-bonding property) is evaluated on the basis of ball shear strength.
  • adhesive force between the p-seat electrode and the electrically conductive wire can be prevented from being lowered by oxidization of the surface of the p-seat electrode while ohmic contact between the p-type layer of a Group III nitride compound semiconductor and the light-transmissive electrode can be kept good.

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  • Manufacturing & Machinery (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
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EP02730877A 2001-06-04 2002-06-03 Procede de fabrication d'un dispositif a semi-conducteur a base d'un compose de nitrure du groupe iii Withdrawn EP1394866A4 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001167835A JP3812366B2 (ja) 2001-06-04 2001-06-04 Ｉｉｉ族窒化物系化合物半導体素子の製造方法
JP2001167835 2001-06-04
PCT/JP2002/005431 WO2002099901A1 (fr) 2001-06-04 2002-06-03 Procede de fabrication d'un dispositif a semi-conducteur a base d'un compose de nitrure du groupe iii

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EP1394866A1 true EP1394866A1 (fr) 2004-03-03
EP1394866A4 EP1394866A4 (fr) 2007-01-03

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US (1) US7101780B2 (fr)
EP (1) EP1394866A4 (fr)
JP (1) JP3812366B2 (fr)
KR (1) KR100538199B1 (fr)
CN (1) CN1263172C (fr)
TW (1) TW560088B (fr)
WO (1) WO2002099901A1 (fr)

Families Citing this family (11)

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Publication number Priority date Publication date Assignee Title
JP3812366B2 (ja) 2001-06-04 2006-08-23 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子の製造方法
KR100585919B1 (ko) 2004-01-15 2006-06-01 학교법인 포항공과대학교 질화갈륨계 ⅲ­ⅴ족 화합물 반도체 소자 및 그 제조방법
US7557380B2 (en) * 2004-07-27 2009-07-07 Cree, Inc. Light emitting devices having a reflective bond pad and methods of fabricating light emitting devices having reflective bond pads
KR100770491B1 (ko) * 2005-03-16 2007-10-25 최운용 플라즈마 처리를 통한 광반도체 투명 전극 제조
JP4952534B2 (ja) * 2007-11-20 2012-06-13 三菱電機株式会社 窒化物半導体発光素子の製造方法
JP5258275B2 (ja) * 2007-12-07 2013-08-07 三菱電機株式会社 窒化物半導体装置およびその製造方法
JP2011204959A (ja) * 2010-03-26 2011-10-13 Nippon Telegr & Teleph Corp <Ntt> 窒化物半導体発光素子
JP5554739B2 (ja) * 2011-03-23 2014-07-23 シャープ株式会社 窒化物半導体発光素子の製造方法
JP5879134B2 (ja) * 2012-01-17 2016-03-08 スタンレー電気株式会社 半導体発光素子の製造方法
WO2013161247A1 (fr) * 2012-04-24 2013-10-31 パナソニック株式会社 Procédé de fabrication d'élément électroluminescent
JP6206159B2 (ja) * 2013-12-17 2017-10-04 三菱電機株式会社 半導体装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1041650A2 (fr) * 1999-03-31 2000-10-04 Toyoda Gosei Co., Ltd. Dispositif semi-conducteur émetteur de lumière comprenant un composé nitride III-V
US6133589A (en) * 1999-06-08 2000-10-17 Lumileds Lighting, U.S., Llc AlGaInN-based LED having thick epitaxial layer for improved light extraction
US6287947B1 (en) * 1999-06-08 2001-09-11 Lumileds Lighting, U.S. Llc Method of forming transparent contacts to a p-type GaN layer

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3620926B2 (ja) * 1995-06-16 2005-02-16 豊田合成株式会社 ｐ伝導形３族窒化物半導体の電極及び電極形成方法及び素子
US6121127A (en) * 1996-06-14 2000-09-19 Toyoda Gosei Co., Ltd. Methods and devices related to electrodes for p-type group III nitride compound semiconductors
JP3344257B2 (ja) 1997-01-17 2002-11-11 豊田合成株式会社 窒化ガリウム系化合物半導体及び素子の製造方法
US6291840B1 (en) 1996-11-29 2001-09-18 Toyoda Gosei Co., Ltd. GaN related compound semiconductor light-emitting device
US6268618B1 (en) * 1997-05-08 2001-07-31 Showa Denko K.K. Electrode for light-emitting semiconductor devices and method of producing the electrode
JP3427732B2 (ja) * 1998-06-17 2003-07-22 日亜化学工業株式会社 窒化物半導体素子の製造方法
TW386286B (en) * 1998-10-26 2000-04-01 Ind Tech Res Inst An ohmic contact of semiconductor and the manufacturing method
US6894391B1 (en) * 1999-04-26 2005-05-17 Sharp Kabushiki Kaisha Electrode structure on P-type III group nitride semiconductor layer and formation method thereof
JP3705016B2 (ja) * 1999-06-28 2005-10-12 豊田合成株式会社 透光性電極用膜及びｉｉｉ族窒化物系化合物半導体素子
EP1276186B1 (fr) * 2000-02-16 2016-12-07 Nichia Corporation Procede pour la preparation d'un dispositif de laser semiconducteur au nitrure
JP3812366B2 (ja) 2001-06-04 2006-08-23 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1041650A2 (fr) * 1999-03-31 2000-10-04 Toyoda Gosei Co., Ltd. Dispositif semi-conducteur émetteur de lumière comprenant un composé nitride III-V
US6133589A (en) * 1999-06-08 2000-10-17 Lumileds Lighting, U.S., Llc AlGaInN-based LED having thick epitaxial layer for improved light extraction
US6287947B1 (en) * 1999-06-08 2001-09-11 Lumileds Lighting, U.S. Llc Method of forming transparent contacts to a p-type GaN layer

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO02099901A1 *

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KR100538199B1 (ko) 2005-12-22
CN1513211A (zh) 2004-07-14
TW560088B (en) 2003-11-01
EP1394866A4 (fr) 2007-01-03
CN1263172C (zh) 2006-07-05
US7101780B2 (en) 2006-09-05
US20040175912A1 (en) 2004-09-09
JP2002368270A (ja) 2002-12-20
JP3812366B2 (ja) 2006-08-23
WO2002099901A1 (fr) 2002-12-12
KR20040007646A (ko) 2004-01-24

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