EP1382063A1 - Procede et dispositif permettant de produire un gaz de travail - Google Patents

Procede et dispositif permettant de produire un gaz de travail

Info

Publication number
EP1382063A1
EP1382063A1 EP02764065A EP02764065A EP1382063A1 EP 1382063 A1 EP1382063 A1 EP 1382063A1 EP 02764065 A EP02764065 A EP 02764065A EP 02764065 A EP02764065 A EP 02764065A EP 1382063 A1 EP1382063 A1 EP 1382063A1
Authority
EP
European Patent Office
Prior art keywords
oxygen
hydrogen
combustion chamber
process gas
rich
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP02764065A
Other languages
German (de)
English (en)
Inventor
Georg Roters
Roland Mader
Helmut Sommer
Genrih Erlikh
Yehuda Pashut
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mattson Thermal Products GmbH
Original Assignee
Mattson Thermal Products GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mattson Thermal Products GmbH filed Critical Mattson Thermal Products GmbH
Publication of EP1382063A1 publication Critical patent/EP1382063A1/fr
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F22—STEAM GENERATION
    • F22B—METHODS OF STEAM GENERATION; STEAM BOILERS
    • F22B1/00—Methods of steam generation characterised by form of heating method
    • F22B1/003—Methods of steam generation characterised by form of heating method using combustion of hydrogen with oxygen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe

Definitions

  • the present invention relates to a method and an apparatus for generating a process gas for treating substrates, in particular semiconductor substrates.
  • Computer chips and other electronic components are manufactured on semiconductor wafers. This requires many work steps and processes, such as B. structuring, lithography, ion implantation, etching or coating. Coating processes are often carried out during a thermal treatment of the wafers in a given process gas atmosphere. It is known to use a process gas consisting of water vapor and oxygen for an oxygen-rich wet oxidation of the wafers.
  • the oxygen-rich process gas is particularly suitable for the build-up of thick oxide layers up to 2000 angstroms with a low thermal budget, and for the production of thin gate oxides with a layer thickness of less than approximately 40 angstroms.
  • a hydrogen-rich wet oxidation is known in which the process gas consists of water vapor and hydrogen.
  • the hydrogen-rich process gas is particularly suitable for the selective oxidation of gate stacks with metal gates or metal gate contacts.
  • the oxygen-rich process gas and the hydrogen-rich process gas i.e., a process gas consisting of water vapor and oxygen or hydrogen.
  • the oxygen-rich process gas was produced in a burner with a combustion chamber in which oxygen and hydrogen were burned to produce water vapor. More and more oxygen was made available for combustion than was burned with hydrogen could be. This created an excess of oxygen, so that a process gas consisting of water vapor and oxygen was formed. This process gas was then passed through a corresponding line into a process chamber for treating a semiconductor wafer. Additional oxygen could be introduced into the line in order to adjust the oxygen content in the process gas.
  • the present invention is therefore based on the object of creating a method and a device which, in a simple and inexpensive manner, enable the production of a hydrogen-rich process gas from water vapor and hydrogen, in which the mixing ratio of water vapor and water is precisely controllable and reproducible.
  • this object is achieved in a method for generating a process gas for treating substrates, in particular semiconductor substrates, in that oxygen is burned in a combustion chamber in a hydrogen-rich environment to form a process gas from water vapor and hydrogen.
  • oxygen is burned in a combustion chamber in a hydrogen-rich environment to form a process gas from water vapor and hydrogen.
  • high gas flows for the process gas can be achieved.
  • the relationship between water vapor and hydrogen is precisely controllable and reproducible, since the amount of water vapor generated is directly proportional to the oxygen introduced and burned with the hydrogen.
  • pure water vapor is generated during the combustion, so that the process gas is of high purity.
  • an oxygen-containing gas such as e.g. B. NO or O 3
  • a hydrogen or a hydrogen isotope containing gas such as. B. NH 3 , deuterium or NO 3 can be used.
  • the presence of unburned oxygen is detected downstream of the combustor. If unburned oxygen is detected downstream of the combustion chamber, the method is interrupted according to one embodiment of the invention, since the unburned oxygen could form an oxyhydrogen mixture with the hydrogen in the process gas. For this reason, an inert gas is preferably also introduced into the process gas when unburned oxygen is detected downstream of the combustion chamber in order to avoid the danger of the formation of oxyhydrogen gas downstream of the combustion chamber.
  • hydrogen is introduced into the process gas downstream of the combustion chamber, as a result of which the hydrogen concentration in the process gas can be set as desired.
  • the ratio of hydrogen to water vapor is preferably set between the stoichiometric combustion (0% H 2 ) and 1000/1 (0.1% H 2 O).
  • the combustion chamber is filled with pure hydrogen prior to the combustion of oxygen, and oxygen is only introduced to initiate the combustion in order to prevent the formation of oxyhydrogen gas in the combustion chamber, which is not completely burned after the combustion has started and from the combustion chamber exit.
  • the combustion chamber and / or the subsequent gas system is advantageously flushed with inert gas (for example N 2 , He or Ar) in order to remove any atmospheric oxygen.
  • inert gas for example N 2 , He or Ar
  • the ratio of oxygen to hydrogen in the combustion chamber is preferably changed during the combustion. This makes it possible to change from a hydrogen-rich process gas to an oxygen-rich process gas in a simple and cost-effective manner if this is desired for a subsequent process.
  • downstream devices such as, for example, separate rapid heating systems or generally systems for the thermal treatment of substrates (semiconductors)
  • stoichiometric combustion of oxygen and hydrogen is carried out for a predetermined period of time. Due to the stoichiometric combustion, the previously excess hydrogen is displaced from the chamber by the water vapor generated. Only when all of the hydrogen has been displaced is the oxygen content increased further in order to provide for oxygen-rich combustion. This ensures that no oxyhydrogen gases are formed in the combustion chamber and / or in downstream gas systems, such as. B.
  • the concentration of unburned oxygen and / or hydrogen can be monitored for safety, so that it is ensured that any oxygen-hydrogen mixture is below the explosion limit, which is dependent on pressure, temperature and other parameters (such as UV radiation, for example). depends.
  • oxygen concentration in the oxygen-rich process gas additional oxygen is preferably introduced downstream of the combustion chamber.
  • the oxygen to hydrogen ratio is preferably set between 0% (complete combustion or 100% H 2 O) and 100% (0.1% H 2 O).
  • an oxygen supply line is connected downstream. locked from the combustion chamber when a hydrogen-rich process gas is generated in the combustion chamber.
  • a hydrogen feed line is preferably locked downstream of the combustion chamber when an oxygen-rich process gas is generated in the combustion chamber.
  • the hydrogen supply line and the oxygen supply line are locked against one another, ie that at most one of the two supply lines is always open.
  • a further fluid is preferably introduced into the process gas downstream of the combustion chamber in order to be able to promote different mechanisms in the subsequent substrate treatment.
  • the further fluid can be a gas which is reactive or inert for the subsequent thermal process for processing semiconductor wafers or a mixture of such gases (for example Ar, N 2 ).
  • an oxygen-rich process gas is first generated in the combustion chamber by burning oxygen in a low-hydrogen environment, and then the ratio of hydrogen to oxygen in the combustion chamber is changed to burn oxygen in a hydrogen-rich environment. It is thus possible either to start with the production of a hydrogen or oxygen-rich process gas and then to switch between the production of these two process gases without having to switch off the burner.
  • the process is preferably interrupted and / or an inert gas is introduced into the process gas if unburned hydrogen is detected downstream of the combustion chamber by a hydrogen detection device (e.g. a hydrogen sensor) becomes. This prevents the formation of an oxyhydrogen mixture downstream of the combustion chamber.
  • a hydrogen detection device e.g. a hydrogen sensor
  • stoichiometric combustion is preferably carried out for a predetermined period of time of oxygen and hydrogen to ensure that the combustion chamber contains only water vapor and no unburned oxygen or hydrogen.
  • the combustion chamber is preferably flushed with an inert gas before the combustion process.
  • the process gas is preferably used for the thermal treatment of at least one semiconductor wafer or semiconductor material and is switched between a hydrogen-rich and an oxygen-rich process gas within a treatment cycle.
  • the treatment cycle is to be understood to mean that the semiconductor (for example semiconductor wafer) is exposed to a temperature-time cycle which comprises at least heating and cooling the semiconductor.
  • the semiconductor which is usually in substrate form, may comprise Si and be a III-V, II-VI, or IV-IV semiconductor.
  • the process gas is used for the thermal treatment of at least one semiconductor wafer, and alternating between a hydrogen-rich and an oxygen-rich process gas in successive thermal treatment cycles.
  • concentration of hydrogen or oxygen in the water vapor of the process gas is preferably changed during a thermal treatment cycle.
  • the object on which the invention is based is also achieved by a device for generating a process gas for treating substrates, in particular semiconductor substrates, which has a burner with a combustion chamber, at least one oxygen supply line and at least one hydrogen supply line into the combustion chamber, and an ignition unit for igniting oxygen / Hydrogen mixture in the combustion chamber and a control unit which is controllable such that the oxygen in a hydrogen-rich to form a process gas from water vapor and hydrogen Environment is ignited and completely burned.
  • Figure 1 is a schematic sectional view through a burner.
  • FIG. 2 shows a schematic block diagram of a substrate treatment device, in which a device for generating a process gas according to the present invention is integrated.
  • Fig. 1 shows a schematic representation of a burner 1, in which oxygen and hydrogen are burned to a water vapor-containing gas according to the inventive method.
  • the burner 1 has a housing 3 which comprises a combustion chamber ⁇ inside.
  • the combustion chamber 5 has an inlet 7 which is connected to a first gas inlet line 8.
  • the first gas inlet line 8 is connected to a feed line 10 via which, as will be explained in more detail below, hydrogen is introduced into the burner 1.
  • a second gas inlet line 12 is also provided in the area of the first inlet line 8.
  • the second gas inlet line 12 extends at least partially in the first gas inlet line 8 and is designed as a so-called lance.
  • oxygen is introduced into the burner 1 via the second gas inlet line.
  • the second inlet line 12 has an outlet end 14 which is arranged in the region of the first inlet line 8, so that the gases introduced via the two inlet lines 8, 12 are mixed in the region of the first inlet line 8 before the mixture flows into the Combustion chamber enters.
  • the area of the first inlet line 8 into which the second inlet line 12 opens is surrounded by a heating ring 17 in order to prevent the oxygen / To heat and ignite the hydrogen-gas mixture in this area above its ignition temperature.
  • a heating ring 17 in order to prevent the oxygen / To heat and ignite the hydrogen-gas mixture in this area above its ignition temperature.
  • another device for igniting the mixture can also be provided.
  • UV detector 20 which is directed towards a combustion area of the oxygen / hydrogen gas mixture in order to monitor the burning process. Since oxygen and hydrogen burn with a visible flame, the UV detector can monitor the burning process with a measuring range of 260 nm.
  • the UV detector is coupled to a corresponding control device which blocks the gas supply via the inlet lines 8 and 12 if the detector detects that the flame is extinguished.
  • the combustion chamber 5 also has an outlet end 21 which is connected to an outlet line 24 which, as will be explained in more detail below with reference to FIG. 2, is connected to a rapid heating system or generally a process chamber for the thermal treatment of semiconductors ,
  • An oxygen and hydrogen sensor (not shown in more detail) or a corresponding detection device is provided in the outlet line 24 in order to detect unburned oxygen or unburned hydrogen in the line 24.
  • FIG. 2 shows a schematic block diagram of a device 30 for treating semiconductor wafers, in which the burner 1 according to FIG. 1 is integrated.
  • the device 30 has a process gas generating part 31 and z. B. a rapid heating system 32, in which at least one semiconductor wafer is arranged and is thermally treated.
  • the rapid heating system 32 has, for example, a structure as is known from DE-A-199 05 524, which goes back to the same applicant, and which is thus made the subject of the present invention in order to avoid repetitions.
  • the outlet pipe 24 of the burner 1 is connected to an inlet of a process chamber of the rapid heating system 32 in order to be able to pass process gases generated in the burner 1 into the rapid heating system.
  • the process gas generating part 31 of the device 30 has the burner 1, an electronic control unit 34, and a large number of mass flow controllers or gas flow control units 36 to 41, which are each controlled by the control unit 34 in order to provide a controlled gas flow therethrough.
  • the mass flow controller 36 has a gas supply line 43 and an outlet line 44.
  • the feed line 43 is connected to a gas source.
  • the outlet line 44 is connected between the burner 1 and the rapid heating device 32 to the line 24 in order to introduce an additional gas into the process gas generated in the burner 1, which is required in the subsequent process.
  • the mass flow controller 37 has a feed line 46 and an outlet line 47.
  • the feed line 46 is connected to a source of an inert gas, such as nitrogen or argon.
  • the outlet line 47 is connected to the feed line 10 of the first inlet line 8 of the burner 1 and to the second inlet line 12 of the burner 1.
  • the mass flow controller 38 has an inlet line 50 and an outlet line 51.
  • the feed line 50 is connected to an oxygen source or to a source for another oxygen-containing gas, while the outlet line 51 is connected to the second inlet line 12 of the burner 1.
  • the mass flow controller 39 has an inlet line 54 which is connected to a hydrogen source or to a source for another hydrogen-containing one
  • Gas is in communication, and an outlet line 55 which is connected to the feed line 10.
  • the mass flow controller 40 is connected to an inlet line 58 and an outlet line 59.
  • the feed line 58 is connected to an oxygen source or to a source for another oxygen-containing gas, while the outlet line 59 is connected to the line 24 between the burner 1 and the rapid heating system 32.
  • the mass flow controller 41 in turn has an inlet line 62 and an outlet line 63.
  • the feed line 62 is connected to a hydrogen source or to a source for another hydrogen-containing gas, while the outlet line 63 between the burner 1 and the rapid heating system 32 is connected to the line 24.
  • mass flow controllers 36 to 41 are controlled by the control unit 34 so that they either direct controlled amounts of gas from their respective feed lines to their respective outlet lines or are closed.
  • all mass flow controllers 36 to 41 are closed.
  • the mass flow controller 37 is then activated in order to introduce inert gas into the burner 1 via the feed line 10 and the second inlet line 12.
  • the feed lines 10, 12, the burner 1 and the outlet line 24 and optionally the process chamber of the rapid heating system 32 are flushed with inert gas to ensure that there are no oxygen or hydrogen in the burner 1, the line 24 and the rapid heating system 32.
  • uncontrolled reactions with residual gases, such as. B. air can be avoided.
  • the mass flow controller 37 is closed. Now the Mass Flow Controller 39 is used to generate hydrogen Supply line 10 is introduced into the burner 1, at least the combustion chamber 5 and possibly also partly the line 24 and the process chamber of the rapid heating system 32 being filled with pure hydrogen. The flow rate of the hydrogen can be controlled as desired.
  • the heating device 17 is activated and oxygen is now introduced into the combustion chamber 5 via the mass flow controller 38 and the second inlet line 12. For example, the oxygen is introduced with a delay of five seconds compared to the hydrogen. When the oxygen begins to exit the outlet end 14 of the second inlet line 12, the oxygen is immediately ignited and burned together with the hydrogen.
  • the heating device 17 It is important that the heating device 17 has already reached the required temperature at this time in order to prevent a larger amount of oxyhydrogen gas from being formed in the combustion chamber 5 due to the mixing of oxygen and hydrogen.
  • the heater 17 heats the area at the outlet end 14 of the inlet conduit 12 to 700 ° C. During the combustion, a flame arises which protrudes into the combustion chamber 5 and is detected by the UV detector.
  • the control unit 34 adjusts the flow of hydrogen and oxygen into the combustion chamber 5 via the mass flow controllers 38 and 39 in such a way that there is more hydrogen than is required for the combustion of the oxygen, so that the oxygen burns in a hydrogen-rich environment becomes.
  • the combustion of the oxygen and the hydrogen produces water vapor in the combustion chamber 5, which is passed together with the excess hydrogen through the line 24 into the process chamber of the rapid heating system 32.
  • the process gas can be produced with a high flow of up to 30 slm (standard liters per minute) and passed into the process chamber.
  • there is an oxygen sensor in line 24 which detects the presence of unburned
  • Oxygen detected in line 24 If unburned oxygen is detected in line 24, the sensor emits a warning signal to control unit 34, since oxygen in line 24 together with the excess Hydrogen can form an oxyhydrogen gas which can explode when introduced into the process chamber of the rapid heating system 32 and thus damage the wafer located therein and possibly also the process chamber itself.
  • the control unit 34 After receiving the warning signal, the control unit 34 sends corresponding signals to the mass flow controllers 38 and 39 in order to close them and thus interrupt the generation of process gas in the burner 1.
  • inert gas can be introduced into the burner 1 and into the line 24 via the mass flow controller 37 in order to avoid the formation of oxyhydrogen gas in the burner 1 and to purge it again.
  • additional hydrogen can be introduced into the process gas in line 24 consisting of water vapor and hydrogen via mass flow controller 41 and line 63 in order to reduce the hydrogen content in the process gas to one increase the desired value.
  • a further gas can be introduced into the process gas of water vapor and hydrogen via the mass flow controller 36.
  • the resulting process gas mixture is then introduced into the process chamber of the rapid heating system 32 for the treatment of a semiconductor wafer.
  • the process chamber of the rapid heating system 32 is first flushed with the process gas before the thermal treatment of the wafer is started. For example, the process chamber is rinsed with three times its own volume, which takes, for example, 60 seconds. Only then will the thermal treatment of the wafer in the process chamber begin.
  • the wafer is at a low temperature of 20 ° C. to 560 ° C. in order to avoid self-ignition of the process gas, which may initially be in an undefined composition. Furthermore, one wants to prevent the wafer from already reacting with the process gas that has not yet been finally defined.
  • the upper temperature of the wafer depends on the process and the type of wafer. You can e.g. B. in metal-coated wafers less than 250 ° C or even less than 100 ° C to prevent oxidation or reaction processes in possibly undefined process gases.
  • Hydrogen-rich wet oxidation for example for the selective oxidation of gate stacks with metal gates or metal gate contacts.
  • the control unit 34 first controls the mass flow controllers 38 and 39 in such a way that oxygen and hydrogen are introduced into the combustion chamber 5 of the burner 1 with a stoichiometric ratio. This leads to a stoichiometric combustion, in which pure water vapor is generated and no residual products remain.
  • the stoichiometric combustion is continued until the excess hydrogen from the previous hydrogen-rich combustion is displaced from the combustion chamber 5 and possibly the process chamber of the rapid heating system.
  • the amount of oxygen introduced via the mass flow controller 38 can be increased so that an oxygen-rich combustion takes place, ie there is more oxygen than can be burned with the hydrogen, so that a process gas consisting of water vapor and oxygen is formed.
  • This mixture of water vapor and oxygen can now be passed via line 24 into the rapid heating system 32.
  • Additional mass can also be introduced into line 24 via mass flow controller 40 in order to increase the oxygen ratio in the process gas consisting of water vapor and oxygen in the desired manner.
  • the burner 1 can also be started in such a way that it first generates an oxygen-rich process gas and, if necessary, is subsequently changed to produce a hydrogen-rich process gas.
  • the process gas generating part 31 of the device 30 is thus able to produce process gas consisting of water vapor and optionally oxygen or hydrogen.
  • the mass flow controllers 40 and 41 can be used to set any mixing ratio of water vapor to oxygen or water vapor to hydrogen in the process gas.
  • the control unit 34 is designed such that it always locks the mass flow controllers 40 and 41 against one another, since the simultaneous introduction of hydrogen and oxygen into the line 24 would lead to the formation of an oxyhydrogen gas. Furthermore, it is also possible to mechanically couple the mass flow controllers 40, 41 in such a way that they are locked against one another, i. H. that only one of the two mass flow controllers 40, 41 can be opened at a time.
  • the control unit 34 also provides that the mass flow controller 40 is always closed when hydrogen-rich combustion takes place in the burner 1, since an oxyhydrogen gas would also be generated when oxygen was introduced into a process gas consisting of water vapor and hydrogen. In an analogous manner, the mass flow controller 41 is controlled in such a way that it is always closed when oxygen-rich combustion takes place in the burner 1.
  • an oxygen and hydrogen sensor is provided in the line 24, which detects unburned oxygen or unburned hydrogen in the line. If oxygen is detected in line 24 after hydrogen-rich combustion in the burner, this indicates an error and there is a risk that oxyhydrogen gas is formed in line 24 and / or the process chamber of the downstream rapid heating system 32.
  • the corresponding sensor therefore sends a warning signal to the control unit 34, which can interrupt the process and, if necessary, introduce inert gas into the burner. This applies in an analogous manner if, after an oxygen-rich combustion in the burner 1, unburned hydrogen is detected in the line 24.
  • the device 30 is now able to process a semiconductor wafer in the rapid heating system 32 with a hydrogen-rich and / or oxygen-rich water vapor-containing process gas. It is possible to switch between hydrogen-rich and oxygen-rich water vapor-containing process gas during a single thermal treatment cycle. Of course, it is also possible to switch between these two process gases several times during a thermal treatment cycle. Switching can also take place between successive thermal treatment cycles within a process chamber.
  • the process gas generation part 31 can be connected to a plurality of rapid heating systems 32 (or generally process chambers for processing semiconductor wafers), which are supplied in parallel with the same or sequentially with the same or different process gas mixtures.
  • a rapid heating system could require an oxygen-rich, water vapor-containing process gas, while in the other rapid heating system a hydrogen-rich, water vapor-containing process gas is required.
  • the burner 1 could thus be used sequentially for both plants without the need to switch off the burner between the supply of the one plant and the other plant and, if necessary, to purge it with inert gas, since any range between the generation of an oxygen-rich and a hydrogen is sufficient , water vapor-containing process gas can be changed.
  • the burner can be operated with overpressure or underpressure, operation with underpressure being advantageous since gas is conducted to the outlet through the underpressure in the combustion chamber. This direction in turn leads to a uniform burning behavior.
  • the present invention also includes exemplary embodiments which result from the combination and / or the exchange of features of the examples described above. Furthermore, it should be pointed out that instead of a semiconductor or a substrate, any object can be processed using the process gas generated according to the method or apparatus described in accordance with the present invention, the processing not being limited exclusively to thermal, ie temperature-time treatment cycles.
  • Devices in which the object is heated can also be radiation power-time treatment cycles.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Combustion & Propulsion (AREA)
  • Thermal Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

La présente invention vise à permettre la production, simple et peu onéreuse, d'un gaz de travail riche en hydrogène, constitué de vapeur d'eau et d'hydrogène, le rapport du mélange de vapeur d'eau et d'hydrogène dans ledit gaz pouvant être régulé et reproduit avec précision. La présente invention concerne donc un procédé et un dispositif de production d'un gaz de travail pour le traitement de substrats, en particulier de substrats semi-conducteurs. Selon ledit procédé, de l'oxygène destiné à la formation d'un gaz de travail constitué de vapeur d'eau et d'hydrogène est brûlé dans une chambre de combustion, dans un environnement riche en hydrogène.
EP02764065A 2001-04-23 2002-04-19 Procede et dispositif permettant de produire un gaz de travail Withdrawn EP1382063A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10119741A DE10119741B4 (de) 2001-04-23 2001-04-23 Verfahren und Vorrichtung zum Behandeln von Halbleitersubstraten
DE10119741 2001-04-23
PCT/EP2002/004345 WO2002086958A1 (fr) 2001-04-23 2002-04-19 Procede et dispositif permettant de produire un gaz de travail

Publications (1)

Publication Number Publication Date
EP1382063A1 true EP1382063A1 (fr) 2004-01-21

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Application Number Title Priority Date Filing Date
EP02764065A Withdrawn EP1382063A1 (fr) 2001-04-23 2002-04-19 Procede et dispositif permettant de produire un gaz de travail

Country Status (7)

Country Link
US (1) US7144826B2 (fr)
EP (1) EP1382063A1 (fr)
JP (1) JP4276845B2 (fr)
KR (1) KR100700240B1 (fr)
DE (1) DE10119741B4 (fr)
TW (1) TW588419B (fr)
WO (1) WO2002086958A1 (fr)

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JP4672007B2 (ja) * 2005-03-08 2011-04-20 株式会社日立国際電気 半導体装置の製造方法、基板処理方法及び基板処理装置
JP4453021B2 (ja) * 2005-04-01 2010-04-21 セイコーエプソン株式会社 半導体装置の製造方法及び半導体製造装置
GB0613044D0 (en) * 2006-06-30 2006-08-09 Boc Group Plc Gas combustion apparatus
US20080257719A1 (en) * 2007-04-21 2008-10-23 Ted Suratt Apparatus And Method For Making Flammable Gas
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KR100700240B1 (ko) 2007-03-26
US20040137754A1 (en) 2004-07-15
DE10119741B4 (de) 2012-01-19
TW588419B (en) 2004-05-21
US7144826B2 (en) 2006-12-05
DE10119741A1 (de) 2002-10-24
JP2004522302A (ja) 2004-07-22
JP4276845B2 (ja) 2009-06-10
WO2002086958A1 (fr) 2002-10-31
KR20030092091A (ko) 2003-12-03

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